JP2003115456A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

Info

Publication number
JP2003115456A
JP2003115456A JP2001310766A JP2001310766A JP2003115456A JP 2003115456 A JP2003115456 A JP 2003115456A JP 2001310766 A JP2001310766 A JP 2001310766A JP 2001310766 A JP2001310766 A JP 2001310766A JP 2003115456 A JP2003115456 A JP 2003115456A
Authority
JP
Japan
Prior art keywords
laser
film
semiconductor film
substrate
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001310766A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003115456A5 (enExample
Inventor
Koki Inoue
弘毅 井上
Akihisa Shimomura
明久 下村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001310766A priority Critical patent/JP2003115456A/ja
Publication of JP2003115456A publication Critical patent/JP2003115456A/ja
Publication of JP2003115456A5 publication Critical patent/JP2003115456A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2001310766A 2001-10-05 2001-10-05 半導体装置の作製方法 Withdrawn JP2003115456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001310766A JP2003115456A (ja) 2001-10-05 2001-10-05 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001310766A JP2003115456A (ja) 2001-10-05 2001-10-05 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2003115456A true JP2003115456A (ja) 2003-04-18
JP2003115456A5 JP2003115456A5 (enExample) 2005-06-23

Family

ID=19129692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001310766A Withdrawn JP2003115456A (ja) 2001-10-05 2001-10-05 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2003115456A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005134542A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp 電気光学装置用基板及びその製造方法並びに電気光学装置
WO2005066920A1 (ja) * 2003-12-26 2005-07-21 Matsushita Electric Industrial Co., Ltd. 表示装置
JP2008004666A (ja) * 2006-06-21 2008-01-10 Ftl:Kk ３次元半導体デバイスの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005134542A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp 電気光学装置用基板及びその製造方法並びに電気光学装置
WO2005066920A1 (ja) * 2003-12-26 2005-07-21 Matsushita Electric Industrial Co., Ltd. 表示装置
US8188643B2 (en) 2003-12-26 2012-05-29 Panasonic Corporation Display apparatus
JP2008004666A (ja) * 2006-06-21 2008-01-10 Ftl:Kk ３次元半導体デバイスの製造方法

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