JP2003077904A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003077904A5 JP2003077904A5 JP2002155500A JP2002155500A JP2003077904A5 JP 2003077904 A5 JP2003077904 A5 JP 2003077904A5 JP 2002155500 A JP2002155500 A JP 2002155500A JP 2002155500 A JP2002155500 A JP 2002155500A JP 2003077904 A5 JP2003077904 A5 JP 2003077904A5
- Authority
- JP
- Japan
- Prior art keywords
- parallel plate
- pair
- plate electrodes
- processing chamber
- vacuum processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000011737 fluorine Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 6
- 238000001020 plasma etching Methods 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002155500A JP3663392B2 (ja) | 1996-03-01 | 2002-05-29 | プラズマエッチング処理装置 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8-44391 | 1996-03-01 | ||
JP4439196 | 1996-03-01 | ||
JP9-7938 | 1997-01-20 | ||
JP793897 | 1997-01-20 | ||
JP2002155500A JP3663392B2 (ja) | 1996-03-01 | 2002-05-29 | プラズマエッチング処理装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP04527597A Division JP3499104B2 (ja) | 1996-03-01 | 1997-02-28 | プラズマ処理装置及びプラズマ処理方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004206943A Division JP4084335B2 (ja) | 1996-03-01 | 2004-07-14 | プラズマエッチング処理装置 |
JP2004315515A Division JP4388455B2 (ja) | 1996-03-01 | 2004-10-29 | プラズマエッチング処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003077904A JP2003077904A (ja) | 2003-03-14 |
JP2003077904A5 true JP2003077904A5 (enrdf_load_stackoverflow) | 2005-06-02 |
JP3663392B2 JP3663392B2 (ja) | 2005-06-22 |
Family
ID=27277808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002155500A Expired - Lifetime JP3663392B2 (ja) | 1996-03-01 | 2002-05-29 | プラズマエッチング処理装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3663392B2 (enrdf_load_stackoverflow) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7976673B2 (en) | 2003-05-06 | 2011-07-12 | Lam Research Corporation | RF pulsing of a narrow gap capacitively coupled reactor |
JP2005079416A (ja) * | 2003-09-02 | 2005-03-24 | Hitachi Ltd | プラズマ処理装置 |
JP2005260011A (ja) * | 2004-03-12 | 2005-09-22 | Hitachi High-Technologies Corp | ウエハ処理装置およびウエハ処理方法 |
JP4550710B2 (ja) * | 2005-10-04 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法および装置 |
JP2008166844A (ja) * | 2008-03-17 | 2008-07-17 | Hitachi High-Technologies Corp | プラズマ処理装置 |
TWI390582B (zh) * | 2008-07-16 | 2013-03-21 | Sumitomo Heavy Industries | Plasma processing device and plasma processing method |
JP6564802B2 (ja) * | 2017-03-22 | 2019-08-21 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
US20220130641A1 (en) * | 2019-02-06 | 2022-04-28 | Evatec Ag | Method of producing ions and apparatus |
-
2002
- 2002-05-29 JP JP2002155500A patent/JP3663392B2/ja not_active Expired - Lifetime
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR0165851B1 (ko) | 판상체 지지테이블 및 그것을 이용한 처리장치 | |
TW469534B (en) | Plasma processing method and apparatus | |
JP5607760B2 (ja) | Cvd装置及びcvd方法 | |
JPH04358076A (ja) | 大気圧プラズマ反応方法とその装置 | |
JP2009010263A (ja) | 基板接合装置 | |
JP4416402B2 (ja) | 機能層を形成するためのプラズマ装置及び機能層の形成方法 | |
US9548214B2 (en) | Plasma etching method of modulating high frequency bias power to processing target object | |
JP2003077904A5 (enrdf_load_stackoverflow) | ||
CN108735598A (zh) | 蚀刻方法 | |
EP1420081A3 (en) | Thin film formation apparatus and thin film formation method employing the apparatus | |
US20100277050A1 (en) | Plasma processing apparatus | |
JP4993694B2 (ja) | プラズマcvd装置、薄膜形成方法 | |
JP2004353066A (ja) | プラズマ源およびプラズマ処理装置 | |
JPH1074738A (ja) | ウェーハ処理装置 | |
JP2002319577A5 (ja) | プラズマ処理装置用のプレート | |
JP2003077903A5 (enrdf_load_stackoverflow) | ||
JP2013134815A (ja) | 沿面放電型プラズマ生成器ならびにそれを用いた成膜方法 | |
JP2003064207A (ja) | 多孔質材料表面を親水性化する乾式表面処理方法 | |
JP5943789B2 (ja) | 大気圧プラズマ成膜装置 | |
EP0801414A3 (en) | Gas-controlled arc vapor deposition apparatus and process | |
JP2538944B2 (ja) | ドライエッチング装置 | |
KR100422108B1 (ko) | 대기압에서 글로우 방전 플라즈마를 발생시키는 장치 | |
JPS57161057A (en) | Chemical vapor phase growth device using plasma | |
JPH0425017A (ja) | 真空成膜装置 | |
JPH0364468A (ja) | 炭素系薄膜の形成方法 |