JP2003045858A5 - - Google Patents
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- Publication number
- JP2003045858A5 JP2003045858A5 JP2002104435A JP2002104435A JP2003045858A5 JP 2003045858 A5 JP2003045858 A5 JP 2003045858A5 JP 2002104435 A JP2002104435 A JP 2002104435A JP 2002104435 A JP2002104435 A JP 2002104435A JP 2003045858 A5 JP2003045858 A5 JP 2003045858A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- resist
- insulating film
- impurity
- island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 36
- 239000012535 impurity Substances 0.000 claims 32
- 239000010410 layer Substances 0.000 claims 23
- 150000002500 ions Chemical class 0.000 claims 18
- 239000007789 gas Substances 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 239000011229 interlayer Substances 0.000 claims 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 2
- 230000001133 acceleration Effects 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002104435A JP4014913B2 (ja) | 2001-04-13 | 2002-04-05 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001116208 | 2001-04-13 | ||
| JP2001-116208 | 2001-04-13 | ||
| JP2002104435A JP4014913B2 (ja) | 2001-04-13 | 2002-04-05 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003045858A JP2003045858A (ja) | 2003-02-14 |
| JP2003045858A5 true JP2003045858A5 (enrdf_load_stackoverflow) | 2005-09-02 |
| JP4014913B2 JP4014913B2 (ja) | 2007-11-28 |
Family
ID=26613609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002104435A Expired - Fee Related JP4014913B2 (ja) | 2001-04-13 | 2002-04-05 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4014913B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4526857B2 (ja) * | 2004-04-12 | 2010-08-18 | パナソニック株式会社 | レジスト除去能力の評価方法及び電子デバイスの製造方法 |
| SG171606A1 (en) * | 2006-04-26 | 2011-06-29 | Advanced Tech Materials | Cleaning of semiconductor processing systems |
| WO2009011084A1 (ja) * | 2007-07-17 | 2009-01-22 | Sharp Kabushiki Kaisha | 薄膜トランジスタを備えた半導体装置およびその製造方法 |
| TWI619153B (zh) | 2008-02-11 | 2018-03-21 | 恩特葛瑞斯股份有限公司 | 在半導體處理系統中離子源之清洗 |
| JP2015008235A (ja) | 2013-06-25 | 2015-01-15 | 富士電機株式会社 | 半導体装置の製造方法 |
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2002
- 2002-04-05 JP JP2002104435A patent/JP4014913B2/ja not_active Expired - Fee Related