JP2003017682A - 半導体素子構造及び半導体素子の製造方法 - Google Patents
半導体素子構造及び半導体素子の製造方法Info
- Publication number
- JP2003017682A JP2003017682A JP2002124564A JP2002124564A JP2003017682A JP 2003017682 A JP2003017682 A JP 2003017682A JP 2002124564 A JP2002124564 A JP 2002124564A JP 2002124564 A JP2002124564 A JP 2002124564A JP 2003017682 A JP2003017682 A JP 2003017682A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- semiconductor device
- manufacturing
- substrate
- device structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000002052 molecular layer Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000005669 field effect Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10120877.4 | 2001-04-27 | ||
| DE10120877A DE10120877A1 (de) | 2001-04-27 | 2001-04-27 | Anordnung mit einem Halbleiterbauelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003017682A true JP2003017682A (ja) | 2003-01-17 |
Family
ID=7683063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002124564A Withdrawn JP2003017682A (ja) | 2001-04-27 | 2002-04-25 | 半導体素子構造及び半導体素子の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20020175327A1 (de) |
| EP (1) | EP1253647A3 (de) |
| JP (1) | JP2003017682A (de) |
| DE (1) | DE10120877A1 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040224459A1 (en) * | 1999-07-07 | 2004-11-11 | Matsushita Electric Industrial Co., Ltd. | Layered structure, method for manufacturing the same, and semiconductor element |
| KR20050065716A (ko) * | 2003-12-23 | 2005-06-30 | 삼성전자주식회사 | 강유전성 액정 소자의 배향 방법 및 배향 장치 |
| KR100609542B1 (ko) * | 2004-06-08 | 2006-08-08 | 주식회사 하이닉스반도체 | 알루미늄 질화막을 게이트 절연막으로 하는 반도체 소자의게이트 전극 제조 방법 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61140175A (ja) * | 1984-12-13 | 1986-06-27 | Semiconductor Energy Lab Co Ltd | 被膜作製方法 |
| JPS6266674A (ja) * | 1985-09-19 | 1987-03-26 | Toshiba Corp | 絶縁ゲ−ト型電界効果トランジスタの製造方法 |
| FR2707425A1 (fr) * | 1993-07-09 | 1995-01-13 | Thomson Csf | Structure en matériau semiconducteur, application à la réalisation d'un transistor et procédé de réalisation. |
| US5492843A (en) * | 1993-07-31 | 1996-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device and method of processing substrate |
| SE9404452D0 (sv) * | 1994-12-22 | 1994-12-22 | Abb Research Ltd | Semiconductor device having an insulated gate |
| US5915164A (en) * | 1995-12-28 | 1999-06-22 | U.S. Philips Corporation | Methods of making high voltage GaN-A1N based semiconductor devices |
| EP0817283A1 (de) * | 1996-01-19 | 1998-01-07 | Matsushita Electric Industrial Co., Ltd. | Lichtemittierende vorrichtung aus einer gallium-nitrid-halbleiterverbindung und verfahren zum herstellen einer gallium-nitrid-halbleiterverbindung |
| JPH10223901A (ja) * | 1996-12-04 | 1998-08-21 | Sony Corp | 電界効果型トランジスタおよびその製造方法 |
| KR100571071B1 (ko) * | 1996-12-04 | 2006-06-21 | 소니 가부시끼 가이샤 | 전계효과트랜지스터및그제조방법 |
| US6031263A (en) * | 1997-07-29 | 2000-02-29 | Micron Technology, Inc. | DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate |
| US6297538B1 (en) * | 1998-03-23 | 2001-10-02 | The University Of Delaware | Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate |
| US6104595A (en) * | 1998-04-06 | 2000-08-15 | Applied Materials, Inc. | Method and apparatus for discharging an electrostatic chuck |
| KR100540246B1 (ko) * | 1999-12-22 | 2006-01-12 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
-
2001
- 2001-04-27 DE DE10120877A patent/DE10120877A1/de not_active Withdrawn
-
2002
- 2002-04-25 JP JP2002124564A patent/JP2003017682A/ja not_active Withdrawn
- 2002-04-25 EP EP02100409A patent/EP1253647A3/de not_active Withdrawn
- 2002-04-26 US US10/134,186 patent/US20020175327A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP1253647A3 (de) | 2004-03-17 |
| EP1253647A2 (de) | 2002-10-30 |
| DE10120877A1 (de) | 2002-10-31 |
| US20020175327A1 (en) | 2002-11-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050425 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20060404 |