JP2002531932A - 半導体製造法における乾式法によるフォトレジストの剥離方法と組成 - Google Patents

半導体製造法における乾式法によるフォトレジストの剥離方法と組成

Info

Publication number
JP2002531932A
JP2002531932A JP2000525912A JP2000525912A JP2002531932A JP 2002531932 A JP2002531932 A JP 2002531932A JP 2000525912 A JP2000525912 A JP 2000525912A JP 2000525912 A JP2000525912 A JP 2000525912A JP 2002531932 A JP2002531932 A JP 2002531932A
Authority
JP
Japan
Prior art keywords
rate
photoresist
etching
gas
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000525912A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002531932A5 (https=
Inventor
チャンフン リー，
ユン−イェン， ジャック ヤン，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2002531932A publication Critical patent/JP2002531932A/ja
Publication of JP2002531932A5 publication Critical patent/JP2002531932A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2000525912A 1997-12-19 1998-12-01 半導体製造法における乾式法によるフォトレジストの剥離方法と組成 Pending JP2002531932A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/994,552 US6080680A (en) 1997-12-19 1997-12-19 Method and composition for dry etching in semiconductor fabrication
US08/994,552 1997-12-19
PCT/US1998/025194 WO1999033096A1 (en) 1997-12-19 1998-12-01 Method and composition for dry photoresist stripping in semiconductor fabrication

Publications (2)

Publication Number Publication Date
JP2002531932A true JP2002531932A (ja) 2002-09-24
JP2002531932A5 JP2002531932A5 (https=) 2006-03-23

Family

ID=25540792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000525912A Pending JP2002531932A (ja) 1997-12-19 1998-12-01 半導体製造法における乾式法によるフォトレジストの剥離方法と組成

Country Status (7)

Country Link
US (1) US6080680A (https=)
EP (1) EP1053566B1 (https=)
JP (1) JP2002531932A (https=)
AT (1) ATE354176T1 (https=)
DE (1) DE69837112T2 (https=)
TW (1) TW494492B (https=)
WO (1) WO1999033096A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3252780B2 (ja) * 1998-01-16 2002-02-04 日本電気株式会社 シリコン層のエッチング方法
JP2000232107A (ja) * 1999-02-12 2000-08-22 Mitsubishi Electric Corp 半導体装置のパターン形成方法
JP3844413B2 (ja) * 1999-08-23 2006-11-15 東京エレクトロン株式会社 エッチング方法
JP2001077086A (ja) * 1999-08-31 2001-03-23 Oki Electric Ind Co Ltd 半導体装置のドライエッチング方法
US6431182B1 (en) 1999-10-27 2002-08-13 Advanced Micro Devices, Inc. Plasma treatment for polymer removal after via etch
US6727185B1 (en) * 1999-11-29 2004-04-27 Texas Instruments Incorporated Dry process for post oxide etch residue removal
US6440874B1 (en) * 2000-03-24 2002-08-27 Advanced Micro Devices, Inc. High throughput plasma resist strip process for temperature sensitive applications
US6461974B1 (en) * 2000-10-06 2002-10-08 Lam Research Corporation High temperature tungsten etching process
US6548231B1 (en) 2000-11-13 2003-04-15 Chartered Semiconductor Manufacturing Ltd. Enhanced passivation scheme for post metal etch clean process
DE10220586A1 (de) * 2002-05-08 2003-11-27 Infineon Technologies Ag Verfahren zum Entfernen von Resistschichten von einer Wolframoberfläche
US7229930B2 (en) * 2003-01-13 2007-06-12 Applied Materials, Inc. Selective etching of low-k dielectrics
US7112534B2 (en) * 2003-09-25 2006-09-26 Intel Corporation Process for low k dielectric plasma etching with high selectivity to deep uv photoresist
US6949460B2 (en) * 2003-11-12 2005-09-27 Lam Research Corporation Line edge roughness reduction for trench etch
US7022620B2 (en) * 2003-11-18 2006-04-04 Micron Technology, Inc. Conditioning of a reaction chamber
KR100641952B1 (ko) * 2004-02-06 2006-11-02 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
US20050284573A1 (en) * 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
US20060011578A1 (en) * 2004-07-16 2006-01-19 Lam Research Corporation Low-k dielectric etch
US20060228889A1 (en) * 2005-03-31 2006-10-12 Edelberg Erik A Methods of removing resist from substrates in resist stripping chambers
US20070269975A1 (en) * 2006-05-18 2007-11-22 Savas Stephen E System and method for removal of photoresist and stop layer following contact dielectric etch
CN101925984A (zh) * 2008-02-01 2010-12-22 朗姆研究公司 减小光阻剥离过程中对低k材料的损害

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63102232A (ja) * 1986-10-17 1988-05-07 Tokuda Seisakusho Ltd ドライエツチング装置
JPS63152126A (ja) * 1986-12-16 1988-06-24 Fujitsu Ltd アツシング方法
JPH08288255A (ja) * 1995-04-12 1996-11-01 Fujitsu Ltd 半導体装置の製造方法
JPH0969525A (ja) * 1995-08-31 1997-03-11 Mitsubishi Electric Corp 金属配線の処理方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4699689A (en) * 1985-05-17 1987-10-13 Emergent Technologies Corporation Method and apparatus for dry processing of substrates
US4673456A (en) * 1985-09-17 1987-06-16 Machine Technology, Inc. Microwave apparatus for generating plasma afterglows
JPH0773104B2 (ja) * 1986-02-14 1995-08-02 富士通株式会社 レジスト剥離方法
US5298112A (en) * 1987-08-28 1994-03-29 Kabushiki Kaisha Toshiba Method for removing composite attached to material by dry etching
JPH01112733A (ja) * 1987-10-27 1989-05-01 Fujitsu Ltd レジストのアッシング方法
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine
WO1990005994A1 (fr) * 1988-11-18 1990-05-31 Kabushiki Kaisha Tokuda Seisakusho Procede de gravure par la voie seche
JP2890432B2 (ja) * 1989-01-10 1999-05-17 富士通株式会社 有機物の灰化方法
US5174856A (en) * 1991-08-26 1992-12-29 Applied Materials, Inc. Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from previous metal etch
US5658425A (en) * 1991-10-16 1997-08-19 Lam Research Corporation Method of etching contact openings with reduced removal rate of underlying electrically conductive titanium silicide layer
US5269879A (en) * 1991-10-16 1993-12-14 Lam Research Corporation Method of etching vias without sputtering of underlying electrically conductive layer
US5221424A (en) * 1991-11-21 1993-06-22 Applied Materials, Inc. Method for removal of photoresist over metal which also removes or inactivates corosion-forming materials remaining from previous metal etch
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates
US5824604A (en) * 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US5882489A (en) * 1996-04-26 1999-03-16 Ulvac Technologies, Inc. Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63102232A (ja) * 1986-10-17 1988-05-07 Tokuda Seisakusho Ltd ドライエツチング装置
JPS63152126A (ja) * 1986-12-16 1988-06-24 Fujitsu Ltd アツシング方法
JPH08288255A (ja) * 1995-04-12 1996-11-01 Fujitsu Ltd 半導体装置の製造方法
JPH0969525A (ja) * 1995-08-31 1997-03-11 Mitsubishi Electric Corp 金属配線の処理方法

Also Published As

Publication number Publication date
TW494492B (en) 2002-07-11
US6080680A (en) 2000-06-27
DE69837112D1 (de) 2007-03-29
EP1053566A1 (en) 2000-11-22
ATE354176T1 (de) 2007-03-15
WO1999033096A1 (en) 1999-07-01
EP1053566B1 (en) 2007-02-14
DE69837112T2 (de) 2007-10-31

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