JP2002529876A5 - - Google Patents

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Publication number
JP2002529876A5
JP2002529876A5 JP2000580214A JP2000580214A JP2002529876A5 JP 2002529876 A5 JP2002529876 A5 JP 2002529876A5 JP 2000580214 A JP2000580214 A JP 2000580214A JP 2000580214 A JP2000580214 A JP 2000580214A JP 2002529876 A5 JP2002529876 A5 JP 2002529876A5
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JP
Japan
Prior art keywords
line
memory
integrated circuit
word
signal
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Pending
Application number
JP2000580214A
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English (en)
Japanese (ja)
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JP2002529876A (ja
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Publication date
Priority claimed from US09/184,474 external-priority patent/US6031754A/en
Application filed filed Critical
Publication of JP2002529876A publication Critical patent/JP2002529876A/ja
Publication of JP2002529876A5 publication Critical patent/JP2002529876A5/ja
Pending legal-status Critical Current

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JP2000580214A 1998-11-02 1999-11-02 切換電圧を高めた強誘電体メモリ Pending JP2002529876A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/184,474 1998-11-02
US09/184,474 US6031754A (en) 1998-11-02 1998-11-02 Ferroelectric memory with increased switching voltage
PCT/US1999/025662 WO2000026919A1 (en) 1998-11-02 1999-11-02 Ferroelectric memory with increased switching voltage

Publications (2)

Publication Number Publication Date
JP2002529876A JP2002529876A (ja) 2002-09-10
JP2002529876A5 true JP2002529876A5 (https=) 2006-12-21

Family

ID=22677028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000580214A Pending JP2002529876A (ja) 1998-11-02 1999-11-02 切換電圧を高めた強誘電体メモリ

Country Status (4)

Country Link
US (1) US6031754A (https=)
EP (1) EP1127354A1 (https=)
JP (1) JP2002529876A (https=)
WO (1) WO2000026919A1 (https=)

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KR100324594B1 (ko) 1999-06-28 2002-02-16 박종섭 강유전체 메모리 장치
US6658608B1 (en) * 1999-09-21 2003-12-02 David A. Kamp Apparatus and method for testing ferroelectric memories
JP2001319472A (ja) * 2000-05-10 2001-11-16 Toshiba Corp 半導体記憶装置
WO2002082510A1 (en) * 2000-08-24 2002-10-17 Cova Technologies Incorporated Single transistor rare earth manganite ferroelectric nonvolatile memory cell
US6515889B1 (en) * 2000-08-31 2003-02-04 Micron Technology, Inc. Junction-isolated depletion mode ferroelectric memory
US6587365B1 (en) * 2000-08-31 2003-07-01 Micron Technology, Inc. Array architecture for depletion mode ferroelectric memory devices
US20020164850A1 (en) 2001-03-02 2002-11-07 Gnadinger Alfred P. Single transistor rare earth manganite ferroelectric nonvolatile memory cell
KR100425160B1 (ko) 2001-05-28 2004-03-30 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 승압전압 발생회로 및그 발생방법
JP3646791B2 (ja) 2001-10-19 2005-05-11 沖電気工業株式会社 強誘電体メモリ装置およびその動作方法
US6825517B2 (en) 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
US6714435B1 (en) * 2002-09-19 2004-03-30 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6888736B2 (en) 2002-09-19 2005-05-03 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6826099B2 (en) 2002-11-20 2004-11-30 Infineon Technologies Ag 2T2C signal margin test mode using a defined charge and discharge of BL and /BL
US6876590B2 (en) 2002-11-20 2005-04-05 Infineon Technologies, Ag 2T2C signal margin test mode using a defined charge exchange between BL and/BL
WO2004077441A1 (ja) * 2003-02-27 2004-09-10 Fujitsu Limited 半導体記憶装置
WO2004077442A1 (ja) * 2003-02-27 2004-09-10 Fujitsu Limited 半導体記憶装置及びデータ読み出し方法
US7082046B2 (en) * 2003-02-27 2006-07-25 Fujitsu Limited Semiconductor memory device and method of reading data
TW594736B (en) 2003-04-17 2004-06-21 Macronix Int Co Ltd Over-driven read method and device of ferroelectric memory
KR100682366B1 (ko) 2005-02-03 2007-02-15 후지쯔 가부시끼가이샤 반도체 기억 장치 및 데이터 판독 방법
US8477550B2 (en) * 2010-05-05 2013-07-02 Stmicroelectronics International N.V. Pass-gated bump sense amplifier for embedded drams
JP6145972B2 (ja) * 2012-03-05 2017-06-14 富士通セミコンダクター株式会社 不揮発性ラッチ回路及びメモリ装置
WO2013137888A1 (en) * 2012-03-15 2013-09-19 Intel Corporation Negative bitline write assist circuit and method for operating the same
US9070432B2 (en) 2013-11-12 2015-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Negative bitline boost scheme for SRAM write-assist
WO2016029189A1 (en) 2014-08-22 2016-02-25 Alacrity Semiconductors, Inc. Methods and apparatus for memory programming
US9792973B2 (en) * 2016-03-18 2017-10-17 Micron Technology, Inc. Ferroelectric memory cell sensing
US10192606B2 (en) 2016-04-05 2019-01-29 Micron Technology, Inc. Charge extraction from ferroelectric memory cell using sense capacitors
US9899073B2 (en) * 2016-06-27 2018-02-20 Micron Technology, Inc. Multi-level storage in ferroelectric memory
US9886991B1 (en) * 2016-09-30 2018-02-06 Micron Technology, Inc. Techniques for sensing logic values stored in memory cells using sense amplifiers that are selectively isolated from digit lines
US10504576B2 (en) * 2017-12-19 2019-12-10 Micron Technology, Inc. Current separation for memory sensing
US10607676B2 (en) * 2018-04-25 2020-03-31 Micron Technology, Inc. Sensing a memory cell
US11127449B2 (en) 2018-04-25 2021-09-21 Micron Technology, Inc. Sensing a memory cell
US11482529B2 (en) 2019-02-27 2022-10-25 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
US10998025B2 (en) 2019-02-27 2021-05-04 Kepler Computing, Inc. High-density low voltage non-volatile differential memory bit-cell with shared plate-line
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US11696451B1 (en) 2021-11-01 2023-07-04 Kepler Computing Inc. Common mode compensation for non-linear polar material based 1T1C memory bit-cell
US11482270B1 (en) 2021-11-17 2022-10-25 Kepler Computing Inc. Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic
US12108609B1 (en) 2022-03-07 2024-10-01 Kepler Computing Inc. Memory bit-cell with stacked and folded planar capacitors
US20230395134A1 (en) 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell
US12347476B1 (en) 2022-12-27 2025-07-01 Kepler Computing Inc. Apparatus and method to improve sensing noise margin in a non-linear polar material based bit-cell
US12334127B2 (en) 2023-01-30 2025-06-17 Kepler Computing Inc. Non-linear polar material based multi-capacitor high density bit-cell

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US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US4888733A (en) * 1988-09-12 1989-12-19 Ramtron Corporation Non-volatile memory cell and sensing method
JPH088339B2 (ja) * 1988-10-19 1996-01-29 株式会社東芝 半導体メモリ
US5198706A (en) * 1991-10-15 1993-03-30 National Semiconductor Ferroelectric programming cell for configurable logic
US5523964A (en) * 1994-04-07 1996-06-04 Symetrix Corporation Ferroelectric non-volatile memory unit
US5406510A (en) * 1993-07-15 1995-04-11 Symetrix Corporation Non-volatile memory
US5424975A (en) * 1993-12-30 1995-06-13 Micron Technology, Inc. Reference circuit for a non-volatile ferroelectric memory
US5487030A (en) * 1994-08-26 1996-01-23 Hughes Aircraft Company Ferroelectric interruptible read memory
JP3672954B2 (ja) * 1994-12-26 2005-07-20 株式会社ルネサステクノロジ 半導体記憶装置
JP2937254B2 (ja) * 1996-04-25 1999-08-23 日本電気株式会社 強誘電体メモリの修復方法
JP2939973B2 (ja) * 1996-06-06 1999-08-25 日本電気株式会社 不揮発性半導体メモリ装置の駆動方法

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