JP2002523909A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002523909A5 JP2002523909A5 JP2000567891A JP2000567891A JP2002523909A5 JP 2002523909 A5 JP2002523909 A5 JP 2002523909A5 JP 2000567891 A JP2000567891 A JP 2000567891A JP 2000567891 A JP2000567891 A JP 2000567891A JP 2002523909 A5 JP2002523909 A5 JP 2002523909A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/140,614 | 1998-08-26 | ||
US09/140,614 US6133550A (en) | 1996-03-22 | 1998-08-26 | Method and apparatus for thermal processing of semiconductor substrates |
PCT/US1999/019019 WO2000012945A1 (en) | 1998-08-26 | 1999-08-20 | Method and apparatus for thermal processing of semiconductor substrates |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002523909A JP2002523909A (ja) | 2002-07-30 |
JP2002523909A5 true JP2002523909A5 (ja) | 2011-02-03 |
JP4971541B2 JP4971541B2 (ja) | 2012-07-11 |
Family
ID=22492034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000567891A Expired - Fee Related JP4971541B2 (ja) | 1998-08-26 | 1999-08-20 | 半導体基板の熱処理のための方法及び装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6133550A (ja) |
EP (1) | EP1117968A4 (ja) |
JP (1) | JP4971541B2 (ja) |
KR (1) | KR100692496B1 (ja) |
TW (1) | TW428250B (ja) |
WO (1) | WO2000012945A1 (ja) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1142001B1 (en) | 1998-11-20 | 2007-10-03 | Steag RTP Systems, Inc. | Fast heating and cooling apparatus for semiconductor wafers |
FR2786208B1 (fr) * | 1998-11-25 | 2001-02-09 | Centre Nat Rech Scient | Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre |
NL1012004C2 (nl) * | 1999-05-07 | 2000-11-13 | Asm Int | Werkwijze voor het verplaatsen van wafers alsmede ring. |
US6342691B1 (en) | 1999-11-12 | 2002-01-29 | Mattson Technology, Inc. | Apparatus and method for thermal processing of semiconductor substrates |
US6331212B1 (en) * | 2000-04-17 | 2001-12-18 | Avansys, Llc | Methods and apparatus for thermally processing wafers |
US6500737B1 (en) * | 2000-06-08 | 2002-12-31 | Wafermasters, Inc. | System and method for providing defect free rapid thermal processing |
EP2487607A3 (en) * | 2000-08-29 | 2013-03-27 | Open Text S.A. | Tool for collaborative edit/search of dynamic objects |
TW522292B (en) | 2001-02-06 | 2003-03-01 | Asml Us Inc | Inertial temperature control system and method |
US6303524B1 (en) | 2001-02-20 | 2001-10-16 | Mattson Thermal Products Inc. | High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques |
US6864466B2 (en) | 2001-03-08 | 2005-03-08 | Aviza Technology, Inc. | System and method to control radial delta temperature |
CN1459017A (zh) * | 2001-03-08 | 2003-11-26 | Asml美国公司 | 控制径向增量温度的系统和方法 |
EP1370665A4 (en) * | 2001-03-12 | 2005-08-17 | Novozymes Inc | METHOD OF ISOLATING GENES FROM MICROORGANISMS |
KR100853903B1 (ko) * | 2001-03-20 | 2008-08-25 | 맷슨 테크놀로지, 인크. | 비교적 높은 유전율을 갖는 코팅을 기판 상에 증착하는 방법 |
US6707011B2 (en) | 2001-04-17 | 2004-03-16 | Mattson Technology, Inc. | Rapid thermal processing system for integrated circuits |
US6600138B2 (en) | 2001-04-17 | 2003-07-29 | Mattson Technology, Inc. | Rapid thermal processing system for integrated circuits |
CN100435269C (zh) | 2001-07-15 | 2008-11-19 | 应用材料有限公司 | 处理系统 |
US6753506B2 (en) | 2001-08-23 | 2004-06-22 | Axcelis Technologies | System and method of fast ambient switching for rapid thermal processing |
JP3727277B2 (ja) * | 2002-02-26 | 2005-12-14 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
US20040247787A1 (en) * | 2002-04-19 | 2004-12-09 | Mackie Neil M. | Effluent pressure control for use in a processing system |
JP2003318121A (ja) * | 2002-04-26 | 2003-11-07 | Trecenti Technologies Inc | 半導体装置の製造方法 |
US6809035B2 (en) * | 2002-08-02 | 2004-10-26 | Wafermasters, Inc. | Hot plate annealing |
US6768084B2 (en) | 2002-09-30 | 2004-07-27 | Axcelis Technologies, Inc. | Advanced rapid thermal processing (RTP) using a linearly-moving heating assembly with an axisymmetric and radially-tunable thermal radiation profile |
JP3781014B2 (ja) * | 2003-03-31 | 2006-05-31 | 株式会社Sumco | シリコンウェーハ熱処理治具およびシリコンウェーハ熱処理方法 |
US6735378B1 (en) * | 2003-05-29 | 2004-05-11 | Axcelis Technologies, Inc. | Pressure controlled heat source and method for using such for RTP |
US8536492B2 (en) * | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
US20080090309A1 (en) * | 2003-10-27 | 2008-04-17 | Ranish Joseph M | Controlled annealing method |
US7127367B2 (en) * | 2003-10-27 | 2006-10-24 | Applied Materials, Inc. | Tailored temperature uniformity |
US6980876B2 (en) * | 2004-02-26 | 2005-12-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Temperature-sensing wafer position detection system and method |
US8021521B2 (en) * | 2005-10-20 | 2011-09-20 | Applied Materials, Inc. | Method for agile workpiece temperature control in a plasma reactor using a thermal model |
JP2007201128A (ja) * | 2006-01-26 | 2007-08-09 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウエハ保持体及び半導体製造装置 |
US7598150B2 (en) * | 2006-11-20 | 2009-10-06 | Applied Materials, Inc. | Compensation techniques for substrate heating processes |
US7378618B1 (en) | 2006-12-14 | 2008-05-27 | Applied Materials, Inc. | Rapid conductive cooling using a secondary process plane |
US8222574B2 (en) * | 2007-01-15 | 2012-07-17 | Applied Materials, Inc. | Temperature measurement and control of wafer support in thermal processing chamber |
WO2008092682A1 (en) * | 2007-02-01 | 2008-08-07 | Ibp Conex Limited | Insertion and release tool for pipe fitting arrangement and method using such tool |
US7900579B2 (en) * | 2007-09-26 | 2011-03-08 | Tokyo Electron Limited | Heat treatment method wherein the substrate holder is composed of two holder constituting bodies that move relative to each other |
US8111978B2 (en) * | 2008-07-11 | 2012-02-07 | Applied Materials, Inc. | Rapid thermal processing chamber with shower head |
US8209833B2 (en) * | 2008-11-07 | 2012-07-03 | Tokyo Electron Limited | Thermal processing system and method of using |
JP2011171450A (ja) * | 2010-02-17 | 2011-09-01 | Nuflare Technology Inc | 成膜装置および成膜方法 |
US9449858B2 (en) | 2010-08-09 | 2016-09-20 | Applied Materials, Inc. | Transparent reflector plate for rapid thermal processing chamber |
US9583364B2 (en) * | 2012-12-31 | 2017-02-28 | Sunedison Semiconductor Limited (Uen201334164H) | Processes and apparatus for preparing heterostructures with reduced strain by radial compression |
JP6054213B2 (ja) * | 2013-03-11 | 2016-12-27 | 東京エレクトロン株式会社 | 支持部材及び半導体製造装置 |
JP6222818B2 (ja) * | 2013-09-10 | 2017-11-01 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7109211B2 (ja) * | 2018-03-06 | 2022-07-29 | 株式会社Screenホールディングス | 基板処理装置 |
KR20210031527A (ko) * | 2018-08-06 | 2021-03-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 처리 챔버를 위한 라이너 |
JP7008602B2 (ja) * | 2018-09-27 | 2022-01-25 | 東京エレクトロン株式会社 | 成膜装置および温度制御方法 |
GB201815815D0 (en) * | 2018-09-28 | 2018-11-14 | Metryx Ltd | Method and apparatus for controlling the temperature of a semiconductor wafer |
US11764101B2 (en) * | 2019-10-24 | 2023-09-19 | ASM IP Holding, B.V. | Susceptor for semiconductor substrate processing |
Family Cites Families (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4496609A (en) * | 1969-10-15 | 1985-01-29 | Applied Materials, Inc. | Chemical vapor deposition coating process employing radiant heat and a susceptor |
US3737282A (en) * | 1971-10-01 | 1973-06-05 | Ibm | Method for reducing crystallographic defects in semiconductor structures |
US3723053A (en) * | 1971-10-26 | 1973-03-27 | Myers Platter S | Heat treating process for semiconductor fabrication |
US4081313A (en) * | 1975-01-24 | 1978-03-28 | Applied Materials, Inc. | Process for preparing semiconductor wafers with substantially no crystallographic slip |
US4194276A (en) | 1978-12-14 | 1980-03-25 | Amp Incorporated | Connector holding fixture |
US4909314A (en) * | 1979-12-21 | 1990-03-20 | Varian Associates, Inc. | Apparatus for thermal treatment of a wafer in an evacuated environment |
US4417347A (en) * | 1981-05-12 | 1983-11-22 | Varian Associates, Inc. | Semiconductor processor incorporating blackbody radiation source with constant planar energy flux |
JPS5862489A (ja) * | 1981-10-07 | 1983-04-13 | 株式会社日立製作所 | ソフトランデイング装置 |
US4481406A (en) * | 1983-01-21 | 1984-11-06 | Varian Associates, Inc. | Heater assembly for thermal processing of a semiconductor wafer in a vacuum chamber |
GB2136937A (en) * | 1983-03-18 | 1984-09-26 | Philips Electronic Associated | A furnace for rapidly heating semiconductor bodies |
US4507078A (en) * | 1983-03-28 | 1985-03-26 | Silicon Valley Group, Inc. | Wafer handling apparatus and method |
US4503087A (en) * | 1983-08-29 | 1985-03-05 | Varian Associates, Inc. | Process for high temperature drive-in diffusion of dopants into semiconductor wafers |
US4518349A (en) * | 1983-12-01 | 1985-05-21 | Better Semiconductor Processes (Bsp) | Cantilevered boat-free semiconductor wafer handling system |
US4555273A (en) * | 1984-02-27 | 1985-11-26 | The United States Of America As Represented By The Secretary Of The Navy | Furnace transient anneal process |
US4649261A (en) * | 1984-02-28 | 1987-03-10 | Tamarack Scientific Co., Inc. | Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
US4698486A (en) * | 1984-02-28 | 1987-10-06 | Tamarack Scientific Co., Inc. | Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
US4777022A (en) * | 1984-08-28 | 1988-10-11 | Stephen I. Boldish | Epitaxial heater apparatus and process |
DE3435888A1 (de) | 1984-09-29 | 1986-04-10 | Siemens AG, 1000 Berlin und 8000 München | Spulenkoerper |
JPS61177715A (ja) * | 1985-02-01 | 1986-08-09 | Hitachi Ltd | ウエハ温度解析プロセスシミユレ−シヨン装置 |
JPS61180438A (ja) * | 1985-02-06 | 1986-08-13 | Toshiba Corp | レジスト処理装置 |
US4794217A (en) * | 1985-04-01 | 1988-12-27 | Qing Hua University | Induction system for rapid heat treatment of semiconductor wafers |
JPH066791B2 (ja) * | 1985-11-20 | 1994-01-26 | 日電アネルバ株式会社 | 減圧気相成長装置 |
JPS63153388A (ja) * | 1986-08-23 | 1988-06-25 | 東レ株式会社 | 熱処理炉 |
US4891335A (en) * | 1986-10-15 | 1990-01-02 | Advantage Production Technology Inc. | Semiconductor substrate heater and reactor process and apparatus |
JP2650908B2 (ja) * | 1987-04-17 | 1997-09-10 | 株式会社日立製作所 | 熱処理方法 |
US5040484A (en) * | 1987-05-04 | 1991-08-20 | Varian Associates, Inc. | Apparatus for retaining wafers |
JPS6412524A (en) * | 1987-07-06 | 1989-01-17 | Kokusai Electric Co Ltd | Vertical type diffusion cvd device |
US4818327A (en) * | 1987-07-16 | 1989-04-04 | Texas Instruments Incorporated | Wafer processing apparatus |
JPH0744159B2 (ja) * | 1987-09-11 | 1995-05-15 | 株式会社日立製作所 | 半導体ウエハの熱処理装置および熱処理方法 |
EP0306967B1 (en) * | 1987-09-11 | 1997-04-16 | Hitachi, Ltd. | Apparatus for performing heat treatment on semiconductor wafers |
JPH088220B2 (ja) * | 1988-09-05 | 1996-01-29 | 株式会社日立製作所 | 半導体ウェハの熱処理装置、及び熱処理方法 |
DE8801785U1 (de) * | 1988-02-11 | 1988-11-10 | Söhlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried | Vorrichtung zur Temperaturbehandlung von Halbleitermaterialien |
US4857689A (en) * | 1988-03-23 | 1989-08-15 | High Temperature Engineering Corporation | Rapid thermal furnace for semiconductor processing |
US4914276A (en) * | 1988-05-12 | 1990-04-03 | Princeton Scientific Enterprises, Inc. | Efficient high temperature radiant furnace |
US4898834A (en) * | 1988-06-27 | 1990-02-06 | Amber Engineering, Inc. | Open-tube, benign-environment annealing method for compound semiconductors |
US5048800A (en) * | 1988-12-27 | 1991-09-17 | Kabushiki Kaisha Toshiba | Vertical heat treatment apparatus |
JP2764038B2 (ja) * | 1989-03-10 | 1998-06-11 | 東京エレクトロン株式会社 | Hmds処理装置 |
US5011794A (en) * | 1989-05-01 | 1991-04-30 | At&T Bell Laboratories | Procedure for rapid thermal annealing of implanted semiconductors |
US5059770A (en) * | 1989-09-19 | 1991-10-22 | Watkins-Johnson Company | Multi-zone planar heater assembly and method of operation |
JPH0693441B2 (ja) * | 1989-09-22 | 1994-11-16 | 株式会社東芝 | 半導体集積回路装置の加熱処理方法 |
US5043300A (en) * | 1990-04-16 | 1991-08-27 | Applied Materials, Inc. | Single anneal step process for forming titanium silicide on semiconductor wafer |
JP2704309B2 (ja) * | 1990-06-12 | 1998-01-26 | 大日本スクリーン製造株式会社 | 基板処理装置及び基板の熱処理方法 |
US5060354A (en) * | 1990-07-02 | 1991-10-29 | George Chizinsky | Heated plate rapid thermal processor |
US5252807A (en) * | 1990-07-02 | 1993-10-12 | George Chizinsky | Heated plate rapid thermal processor |
JP3007432B2 (ja) * | 1991-02-19 | 2000-02-07 | 東京エレクトロン株式会社 | 熱処理装置 |
US5815396A (en) * | 1991-08-12 | 1998-09-29 | Hitachi, Ltd. | Vacuum processing device and film forming device and method using same |
US5536918A (en) * | 1991-08-16 | 1996-07-16 | Tokyo Electron Sagami Kabushiki Kaisha | Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers |
US5387557A (en) * | 1991-10-23 | 1995-02-07 | F. T. L. Co., Ltd. | Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones |
US5429498A (en) * | 1991-12-13 | 1995-07-04 | Tokyo Electron Sagami Kabushiki Kaisha | Heat treatment method and apparatus thereof |
JP2869300B2 (ja) * | 1992-08-07 | 1999-03-10 | 三菱マテリアル株式会社 | 半導体ウェーハの熱処理装置 |
US5343012A (en) * | 1992-10-06 | 1994-08-30 | Hardy Walter N | Differentially pumped temperature controller for low pressure thin film fabrication process |
JP3292540B2 (ja) * | 1993-03-03 | 2002-06-17 | 東京エレクトロン株式会社 | 熱処理装置 |
JPH088194A (ja) * | 1994-06-16 | 1996-01-12 | Kishimoto Sangyo Kk | 気相成長機構および熱処理機構における加熱装置 |
US5680502A (en) * | 1995-04-03 | 1997-10-21 | Varian Associates, Inc. | Thin film heat treatment apparatus with conductively heated table and surrounding radiation shield |
US6002109A (en) * | 1995-07-10 | 1999-12-14 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
JP3596188B2 (ja) * | 1995-09-22 | 2004-12-02 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
US5695654A (en) * | 1996-02-05 | 1997-12-09 | Lee's Aquarium & Pet Products | Apparatus and method for draining, cleaning, and filling an aquarium |
JPH11176822A (ja) * | 1997-12-05 | 1999-07-02 | Hitachi Ltd | 半導体処理装置 |
-
1998
- 1998-08-26 US US09/140,614 patent/US6133550A/en not_active Expired - Lifetime
-
1999
- 1999-08-20 KR KR1020017002448A patent/KR100692496B1/ko not_active IP Right Cessation
- 1999-08-20 EP EP99942361A patent/EP1117968A4/en not_active Withdrawn
- 1999-08-20 WO PCT/US1999/019019 patent/WO2000012945A1/en active IP Right Grant
- 1999-08-20 JP JP2000567891A patent/JP4971541B2/ja not_active Expired - Fee Related
- 1999-08-24 TW TW088114476A patent/TW428250B/zh not_active IP Right Cessation
-
2000
- 2000-08-18 US US09/641,461 patent/US6355909B1/en not_active Expired - Lifetime