JP2002326898A5 - - Google Patents

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Publication number
JP2002326898A5
JP2002326898A5 JP2001134171A JP2001134171A JP2002326898A5 JP 2002326898 A5 JP2002326898 A5 JP 2002326898A5 JP 2001134171 A JP2001134171 A JP 2001134171A JP 2001134171 A JP2001134171 A JP 2001134171A JP 2002326898 A5 JP2002326898 A5 JP 2002326898A5
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JP
Japan
Prior art keywords
group iii
iii nitride
nitride crystal
mixed melt
crystal
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Application number
JP2001134171A
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English (en)
Japanese (ja)
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JP2002326898A (ja
JP4245822B2 (ja
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Application filed filed Critical
Priority to JP2001134171A priority Critical patent/JP4245822B2/ja
Priority claimed from JP2001134171A external-priority patent/JP4245822B2/ja
Priority to US10/134,895 priority patent/US7001457B2/en
Publication of JP2002326898A publication Critical patent/JP2002326898A/ja
Priority to US11/302,128 priority patent/US7531038B2/en
Publication of JP2002326898A5 publication Critical patent/JP2002326898A5/ja
Priority to US12/353,608 priority patent/US8623138B2/en
Application granted granted Critical
Publication of JP4245822B2 publication Critical patent/JP4245822B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001134171A 2001-05-01 2001-05-01 Ｉｉｉ族窒化物結晶の製造方法 Expired - Fee Related JP4245822B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001134171A JP4245822B2 (ja) 2001-05-01 2001-05-01 Ｉｉｉ族窒化物結晶の製造方法
US10/134,895 US7001457B2 (en) 2001-05-01 2002-04-30 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US11/302,128 US7531038B2 (en) 2001-05-01 2005-12-14 Crystal growth method
US12/353,608 US8623138B2 (en) 2001-05-01 2009-01-14 Crystal growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001134171A JP4245822B2 (ja) 2001-05-01 2001-05-01 Ｉｉｉ族窒化物結晶の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008247344A Division JP4956515B2 (ja) 2008-09-26 2008-09-26 Ｉｉｉ族窒化物結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2002326898A JP2002326898A (ja) 2002-11-12
JP2002326898A5 true JP2002326898A5 (de) 2006-06-29
JP4245822B2 JP4245822B2 (ja) 2009-04-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001134171A Expired - Fee Related JP4245822B2 (ja) 2001-05-01 2001-05-01 Ｉｉｉ族窒化物結晶の製造方法

Country Status (1)

Country Link
JP (1) JP4245822B2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220311B2 (en) 2002-11-08 2007-05-22 Ricoh Company, Ltd. Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
JP5310611B2 (ja) * 2002-11-26 2013-10-09 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP4508613B2 (ja) * 2002-11-26 2010-07-21 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
US7261775B2 (en) 2003-01-29 2007-08-28 Ricoh Company, Ltd. Methods of growing a group III nitride crystal
JP2011082528A (ja) * 2003-11-26 2011-04-21 Ricoh Co Ltd 半導体発光素子
JP2005263511A (ja) * 2004-03-16 2005-09-29 Ricoh Co Ltd Ｉｉｉ族窒化物の結晶成長方法およびｉｉｉ族窒化物結晶および半導体デバイス
CN100535200C (zh) * 2004-04-27 2009-09-02 松下电器产业株式会社 Ⅲ族元素氮化物结晶制造装置以及ⅲ族元素氮化物结晶制造方法
JP4603498B2 (ja) 2005-03-14 2010-12-22 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法及び製造装置
CN101175875B (zh) 2005-05-12 2010-12-15 株式会社理光 Ⅲ族氮化物结晶的制造方法及ⅲ族氮化物结晶的制造装置
JP4878794B2 (ja) * 2005-08-10 2012-02-15 株式会社リコー 結晶成長装置および製造方法
JP4856934B2 (ja) 2005-11-21 2012-01-18 株式会社リコー ＧａＮ結晶
US20070215034A1 (en) 2006-03-14 2007-09-20 Hirokazu Iwata Crystal preparing device, crystal preparing method, and crystal
JP2007254201A (ja) * 2006-03-23 2007-10-04 Ngk Insulators Ltd 単結晶の製造方法
JP4760652B2 (ja) * 2006-10-03 2011-08-31 三菱化学株式会社 Ｇａ含有窒化物結晶の製造方法およびそれを用いた半導体デバイスの製造方法
JP4939360B2 (ja) * 2007-10-05 2012-05-23 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法
JP2009091182A (ja) * 2007-10-05 2009-04-30 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の成長方法
JP6714320B2 (ja) 2014-03-18 2020-06-24 株式会社サイオクス １３族窒化物結晶の製造方法及び１３族窒化物結晶を有する積層体
JP7218378B2 (ja) * 2018-02-19 2023-02-06 シグニファイ ホールディング ビー ヴィ ライトエンジンを備える封止デバイス

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