JP2002311594A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002311594A5 JP2002311594A5 JP2001115597A JP2001115597A JP2002311594A5 JP 2002311594 A5 JP2002311594 A5 JP 2002311594A5 JP 2001115597 A JP2001115597 A JP 2001115597A JP 2001115597 A JP2001115597 A JP 2001115597A JP 2002311594 A5 JP2002311594 A5 JP 2002311594A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- layer resist
- resist composition
- resist
- sulfonic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- -1 tertiary alcohol ester Chemical class 0.000 description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000007965 phenolic acids Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000003333 secondary alcohols Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001115597A JP4139575B2 (ja) | 2001-04-13 | 2001-04-13 | シリコン含有２層レジスト用下層レジスト組成物 |
| US10/118,896 US6777161B2 (en) | 2001-04-13 | 2002-04-10 | Lower layer resist composition for silicon-containing two-layer resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001115597A JP4139575B2 (ja) | 2001-04-13 | 2001-04-13 | シリコン含有２層レジスト用下層レジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002311594A JP2002311594A (ja) | 2002-10-23 |
| JP2002311594A5 true JP2002311594A5 (https=) | 2006-01-19 |
| JP4139575B2 JP4139575B2 (ja) | 2008-08-27 |
Family
ID=18966468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001115597A Expired - Fee Related JP4139575B2 (ja) | 2001-04-13 | 2001-04-13 | シリコン含有２層レジスト用下層レジスト組成物 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6777161B2 (https=) |
| JP (1) | JP4139575B2 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003112321A (ja) * | 2001-10-02 | 2003-04-15 | Sony Corp | 加工用マスター基材及び同マスター基材の製造方法 |
| US7238462B2 (en) | 2002-11-27 | 2007-07-03 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating material for wiring, embedded material, and wiring formation method |
| KR100512171B1 (ko) * | 2003-01-24 | 2005-09-02 | 삼성전자주식회사 | 하층 레지스트용 조성물 |
| EP1743363A4 (en) * | 2004-03-12 | 2010-08-11 | Fujifilm Electronic Materials | HEAT-CURED BASE COATING FOR LITHOGRAPHIC APPLICATION |
| JP4575214B2 (ja) * | 2005-04-04 | 2010-11-04 | 信越化学工業株式会社 | レジスト下層膜材料およびパターン形成方法 |
| JP2008076889A (ja) * | 2006-09-22 | 2008-04-03 | Jsr Corp | レジスト下層膜用組成物及びその製造方法 |
| JP5051133B2 (ja) | 2006-09-28 | 2012-10-17 | Ｊｓｒ株式会社 | レジスト下層膜形成方法及びそれに用いるレジスト下層膜用組成物並びにパターン形成方法 |
| JP5015891B2 (ja) * | 2008-10-02 | 2012-08-29 | 信越化学工業株式会社 | 金属酸化物含有膜形成用組成物、金属酸化物含有膜形成基板及びパターン形成方法 |
| JP5015892B2 (ja) * | 2008-10-02 | 2012-08-29 | 信越化学工業株式会社 | ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法 |
| JP5609882B2 (ja) | 2009-09-29 | 2014-10-22 | Jsr株式会社 | パターン形成方法及びレジスト下層膜形成用組成物 |
| US8586290B2 (en) * | 2009-10-23 | 2013-11-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Patterning process and chemical amplified photoresist composition |
| US8323868B2 (en) * | 2009-11-06 | 2012-12-04 | International Business Machines Corporation | Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof |
| JP5597616B2 (ja) * | 2011-10-03 | 2014-10-01 | 富士フイルム株式会社 | ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク |
| JP6167588B2 (ja) * | 2012-03-29 | 2017-07-26 | Jsr株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
| JP6468137B2 (ja) * | 2014-10-01 | 2019-02-13 | 信越化学工業株式会社 | 化学増幅型ネガ型レジスト材料、光硬化性ドライフィルム及びその製造方法、パターン形成方法並びに電気・電子部品保護用皮膜 |
| FR3074180B1 (fr) * | 2017-11-24 | 2021-01-01 | Arkema France | Procede de controle de la planeite d'un empilement polymerique |
| JP7611785B2 (ja) * | 2021-07-06 | 2025-01-10 | 信越化学工業株式会社 | 密着膜形成材料、これを用いた密着膜の形成方法、及び密着膜形成材料を用いたパターン形成方法 |
| JPWO2024005194A1 (https=) * | 2022-07-01 | 2024-01-04 | ||
| US12572073B2 (en) * | 2022-09-16 | 2026-03-10 | Dupont Electronic Materials International, Llc | Photoresist underlayer composition |
| WO2026034307A1 (ja) * | 2024-08-07 | 2026-02-12 | Jsr株式会社 | 半導体基板の製造方法、レジスト下層膜形成用組成物及び窒素含有化合物の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6323287B1 (en) | 1999-03-12 | 2001-11-27 | Arch Specialty Chemicals, Inc. | Hydroxy-amino thermally cured undercoat for 193 NM lithography |
| US6492092B1 (en) | 1999-03-12 | 2002-12-10 | Arch Specialty Chemicals, Inc. | Hydroxy-epoxide thermally cured undercoat for 193 NM lithography |
| DE50015750D1 (de) | 1999-04-28 | 2009-11-12 | Qimonda Ag | Bottomresist |
| US6420088B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
-
2001
- 2001-04-13 JP JP2001115597A patent/JP4139575B2/ja not_active Expired - Fee Related
-
2002
- 2002-04-10 US US10/118,896 patent/US6777161B2/en not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2002311594A5 (https=) | ||
| CN102667623B (zh) | 定向自组装方法以及由此形成的分层结构 | |
| JP4336310B2 (ja) | ハードマスク層としてのシリコン含有反射防止層及びその形成方法 | |
| TW200736839A (en) | Antireflection film composition, patterning process and substrate using the same | |
| CN108137313B (zh) | 用于嵌段共聚物自组装的组合物和方法 | |
| US20110147985A1 (en) | Methods of directed self-assembly and layered structures formed therefrom | |
| US7816068B2 (en) | Underlayer compositions containing heterocyclic aromatic structures | |
| JP2013187408A (ja) | ブロックコポリマー含有組成物及びパターンの縮小方法 | |
| KR20110111473A (ko) | 더블- 및 트리플-패터닝 리소그라피를 위한 핀-온 스페이서 재료들 | |
| KR920000114A (ko) | 에칭단계중 무변화 포토레지스트 로우드와 극소지형 언더커트를 갖는 다중층 포토레지스트 에칭방법 | |
| TWI655217B (zh) | 底劑、含相分離結構的結構體的製造方法 | |
| KR20130103693A (ko) | 화학 증폭 네가티브형 레지스트 조성물 및 패턴 형성 방법 | |
| JP2005300853A5 (https=) | ||
| JP5934565B2 (ja) | パターンの縮小方法、及び組成物 | |
| WO2011073013A1 (en) | Methods of directed self-assembly with 193 - nm immersion lithography and layered structures formed therefrom | |
| EP3500637B1 (en) | Polymer compositions for self-assembly applications | |
| KR102641388B1 (ko) | 패턴 형성 방법 | |
| JP2010250118A (ja) | 微細パターン形成方法 | |
| JP6027758B2 (ja) | 組成物及びパターン形成方法 | |
| US20060105266A1 (en) | Low activation energy positive resist | |
| KR20040005472A (ko) | 듀얼 다마신 패턴 형성방법 | |
| KR20010113458A (ko) | 반도체 장치의 제조 방법, 반도체 장치의 제조 방법에사용되는 매립 재료 및 반도체 장치 | |
| KR102285024B1 (ko) | 하드마스크용 조성물 | |
| KR101359796B1 (ko) | 반도체 소자의 패턴 형성 방법 | |
| TW202546054A (zh) | 相分離結構形成用樹脂組成物、含有相分離結構的結構體之製造方法，及嵌段共聚物 |