JP2002301697A5 - - Google Patents
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- Publication number
- JP2002301697A5 JP2002301697A5 JP2001360361A JP2001360361A JP2002301697A5 JP 2002301697 A5 JP2002301697 A5 JP 2002301697A5 JP 2001360361 A JP2001360361 A JP 2001360361A JP 2001360361 A JP2001360361 A JP 2001360361A JP 2002301697 A5 JP2002301697 A5 JP 2002301697A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- selected area
- polysilicon
- silicon layer
- monocrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims description 20
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 22
- 239000011248 coating agent Substances 0.000 claims 4
- 238000000576 coating method Methods 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 238000000059 patterning Methods 0.000 claims 4
- 238000000206 photolithography Methods 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 239000011241 protective layer Substances 0.000 claims 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/724,514 | 2000-11-27 | ||
| US09/724,514 US6479315B1 (en) | 2000-11-27 | 2000-11-27 | Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002301697A JP2002301697A (ja) | 2002-10-15 |
| JP2002301697A5 true JP2002301697A5 (enExample) | 2004-11-11 |
Family
ID=24910720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001360361A Pending JP2002301697A (ja) | 2000-11-27 | 2001-11-27 | 単結晶シリコンの露光の工程を備える、マイクロメカニカルおよびマイクロオプトメカニカルな構造物を製造するための方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6479315B1 (enExample) |
| EP (1) | EP1213259B1 (enExample) |
| JP (1) | JP2002301697A (enExample) |
| DE (1) | DE60128529T2 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6614110B1 (en) * | 1994-12-22 | 2003-09-02 | Benedict G Pace | Module with bumps for connection and support |
| US6506620B1 (en) * | 2000-11-27 | 2003-01-14 | Microscan Systems Incorporated | Process for manufacturing micromechanical and microoptomechanical structures with backside metalization |
| JP2002334927A (ja) * | 2001-05-11 | 2002-11-22 | Hitachi Ltd | 半導体装置の製造方法 |
| KR100456526B1 (ko) * | 2001-05-22 | 2004-11-09 | 삼성전자주식회사 | 식각저지막을 갖는 에스오아이 기판, 그 제조방법, 그위에 제작된 에스오아이 집적회로 및 그것을 사용하여에스오아이 집적회로를 제조하는 방법 |
| US20040240034A1 (en) * | 2001-11-30 | 2004-12-02 | Scharf Bruce R. | Diffraction compensation using a patterned reflector |
| US7172911B2 (en) * | 2002-02-14 | 2007-02-06 | Silex Microsystems Ab | Deflectable microstructure and method of manufacturing the same through bonding of wafers |
| US6673697B2 (en) * | 2002-04-03 | 2004-01-06 | Intel Corporation | Packaging microelectromechanical structures |
| US6858459B2 (en) * | 2002-05-23 | 2005-02-22 | Institute Of Microelectronics | Method of fabricating micro-mirror switching device |
| KR100471153B1 (ko) * | 2002-11-27 | 2005-03-10 | 삼성전기주식회사 | Ｓｏｉ웨이퍼를 이용한 mems 디바이스의 제조 및 접지 방법 |
| US6972255B2 (en) * | 2003-07-28 | 2005-12-06 | Freescale Semiconductor, Inc. | Semiconductor device having an organic anti-reflective coating (ARC) and method therefor |
| US7056757B2 (en) * | 2003-11-25 | 2006-06-06 | Georgia Tech Research Corporation | Methods of forming oxide masks with submicron openings and microstructures formed thereby |
| US7355793B2 (en) * | 2004-05-19 | 2008-04-08 | The Regents Of The University Of California | Optical system applicable to improving the dynamic range of Shack-Hartmann sensors |
| US7067355B2 (en) * | 2004-05-26 | 2006-06-27 | Hewlett-Packard Development Company, L.P. | Package having bond-sealed underbump |
| US20080119002A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a MEMS device |
| US20080116534A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a MEMS device |
| US20080119001A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a mems device |
| US20080119003A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a MEMS device |
| US7691746B2 (en) * | 2007-07-31 | 2010-04-06 | Hewlett-Packard Development Company, L.P. | Formation of silicon nitride layer on back side of substrate |
| US20090088618A1 (en) | 2007-10-01 | 2009-04-02 | Arneson Michael R | System and Method for Manufacturing a Swallowable Sensor Device |
| WO2009120900A2 (en) * | 2008-03-26 | 2009-10-01 | Endevco Corporation | Interconnection system on a plane adjacent to a solid-state device structure |
| DE102014002824A1 (de) * | 2014-02-25 | 2015-08-27 | Northrop Grumman Litef Gmbh | Verfahren zur Herstellung eines Bauteils |
| DE102016200494A1 (de) | 2016-01-15 | 2017-07-20 | Robert Bosch Gmbh | Verfahren zum Herstellen eines mehrschichtigen MEMS-Bauelements und entsprechendes mehrschichtiges MEMS-Bauelement |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6149190A (en) | 1993-05-26 | 2000-11-21 | Kionix, Inc. | Micromechanical accelerometer for automotive applications |
| DE4318466B4 (de) | 1993-06-03 | 2004-12-09 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Sensors |
| US5476819A (en) | 1993-07-26 | 1995-12-19 | Litton Systems, Inc. | Substrate anchor for undercut silicon on insulator microstructures |
| DE4331798B4 (de) * | 1993-09-18 | 2004-08-26 | Robert Bosch Gmbh | Verfahren zur Herstellung von mikromechanischen Bauelementen |
| US5589083A (en) | 1993-12-11 | 1996-12-31 | Electronics And Telecommunications Research Institute | Method of manufacturing microstructure by the anisotropic etching and bonding of substrates |
| US5824186A (en) * | 1993-12-17 | 1998-10-20 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
| US5645684A (en) | 1994-03-07 | 1997-07-08 | The Regents Of The University Of California | Multilayer high vertical aspect ratio thin film structures |
| US5660680A (en) | 1994-03-07 | 1997-08-26 | The Regents Of The University Of California | Method for fabrication of high vertical aspect ratio thin film structures |
| US5484073A (en) | 1994-03-28 | 1996-01-16 | I/O Sensors, Inc. | Method for fabricating suspension members for micromachined sensors |
| US5569355A (en) | 1995-01-11 | 1996-10-29 | Center For Advanced Fiberoptic Applications | Method for fabrication of microchannel electron multipliers |
| US6084257A (en) | 1995-05-24 | 2000-07-04 | Lucas Novasensor | Single crystal silicon sensor with high aspect ratio and curvilinear structures |
| SE9502258D0 (sv) | 1995-06-21 | 1995-06-21 | Pharmacia Biotech Ab | Method for the manufacture of a membrane-containing microstructure |
| DE19603829A1 (de) | 1996-02-02 | 1997-08-07 | Daimler Benz Ag | Verfahren zur Herstellung von mikromechanischen Strukturen aus Silizium |
| US6074890A (en) | 1998-01-08 | 2000-06-13 | Rockwell Science Center, Llc | Method of fabricating suspended single crystal silicon micro electro mechanical system (MEMS) devices |
| US5853960A (en) | 1998-03-18 | 1998-12-29 | Trw Inc. | Method for producing a micro optical semiconductor lens |
| US6117344A (en) | 1998-03-20 | 2000-09-12 | Borealis Technical Limited | Method for manufacturing low work function surfaces |
| US6014240A (en) | 1998-12-01 | 2000-01-11 | Xerox Corporation | Method and apparatus for an integrated laser beam scanner using a carrier substrate |
| US6002507A (en) | 1998-12-01 | 1999-12-14 | Xerox Corpoation | Method and apparatus for an integrated laser beam scanner |
| US6238581B1 (en) | 1998-12-18 | 2001-05-29 | Eastman Kodak Company | Process for manufacturing an electro-mechanical grating device |
| US6362512B1 (en) | 1998-12-23 | 2002-03-26 | Xerox Corporation | Microelectromechanical structures defined from silicon on insulator wafers |
| US6379989B1 (en) | 1998-12-23 | 2002-04-30 | Xerox Corporation | Process for manufacture of microoptomechanical structures |
-
2000
- 2000-11-27 US US09/724,514 patent/US6479315B1/en not_active Expired - Lifetime
-
2001
- 2001-11-27 JP JP2001360361A patent/JP2002301697A/ja active Pending
- 2001-11-27 EP EP01128161A patent/EP1213259B1/en not_active Expired - Lifetime
- 2001-11-27 DE DE60128529T patent/DE60128529T2/de not_active Expired - Lifetime
-
2002
- 2002-07-11 US US10/193,804 patent/US6661070B2/en not_active Expired - Fee Related
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