DE60128529T2 - Verfahren zur Herstellung von mikromechanischen und mikrooptomechanischen Strukturen mit Freilegen von einkristallinem Silizium - Google Patents
Verfahren zur Herstellung von mikromechanischen und mikrooptomechanischen Strukturen mit Freilegen von einkristallinem Silizium Download PDFInfo
- Publication number
- DE60128529T2 DE60128529T2 DE60128529T DE60128529T DE60128529T2 DE 60128529 T2 DE60128529 T2 DE 60128529T2 DE 60128529 T DE60128529 T DE 60128529T DE 60128529 T DE60128529 T DE 60128529T DE 60128529 T2 DE60128529 T2 DE 60128529T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- minutes
- polysilicon
- micromechanical
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 51
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010410 layer Substances 0.000 claims description 134
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 62
- 229920005591 polysilicon Polymers 0.000 claims description 60
- 230000003287 optical effect Effects 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- 150000004767 nitrides Chemical class 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 68
- 238000001020 plasma etching Methods 0.000 description 65
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 32
- 229920002120 photoresistant polymer Polymers 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 239000010409 thin film Substances 0.000 description 21
- 238000000206 photolithography Methods 0.000 description 18
- 238000000137 annealing Methods 0.000 description 17
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 17
- 238000005459 micromachining Methods 0.000 description 17
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 239000000460 chlorine Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000003973 paint Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 101000617708 Homo sapiens Pregnancy-specific beta-1-glycoprotein 1 Proteins 0.000 description 1
- 101000617725 Homo sapiens Pregnancy-specific beta-1-glycoprotein 2 Proteins 0.000 description 1
- 208000005647 Mumps Diseases 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- 102100022019 Pregnancy-specific beta-1-glycoprotein 2 Human genes 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000002120 advanced silicon etching Methods 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 230000027455 binding Effects 0.000 description 1
- 238000009739 binding Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 208000010805 mumps infectious disease Diseases 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/05—Type of movement
- B81B2203/058—Rotation out of a plane parallel to the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0135—Controlling etch progression
- B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
- B81C2201/0163—Controlling internal stress of deposited layers
- B81C2201/0164—Controlling internal stress of deposited layers by doping the layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/05—Temporary protection of devices or parts of the devices during manufacturing
- B81C2201/056—Releasing structures at the end of the manufacturing process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Micromachines (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/724,514 US6479315B1 (en) | 2000-11-27 | 2000-11-27 | Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step |
| US724514 | 2000-11-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60128529D1 DE60128529D1 (de) | 2007-07-05 |
| DE60128529T2 true DE60128529T2 (de) | 2008-01-24 |
Family
ID=24910720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60128529T Expired - Lifetime DE60128529T2 (de) | 2000-11-27 | 2001-11-27 | Verfahren zur Herstellung von mikromechanischen und mikrooptomechanischen Strukturen mit Freilegen von einkristallinem Silizium |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6479315B1 (enExample) |
| EP (1) | EP1213259B1 (enExample) |
| JP (1) | JP2002301697A (enExample) |
| DE (1) | DE60128529T2 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6614110B1 (en) * | 1994-12-22 | 2003-09-02 | Benedict G Pace | Module with bumps for connection and support |
| US6506620B1 (en) * | 2000-11-27 | 2003-01-14 | Microscan Systems Incorporated | Process for manufacturing micromechanical and microoptomechanical structures with backside metalization |
| JP2002334927A (ja) * | 2001-05-11 | 2002-11-22 | Hitachi Ltd | 半導体装置の製造方法 |
| KR100456526B1 (ko) * | 2001-05-22 | 2004-11-09 | 삼성전자주식회사 | 식각저지막을 갖는 에스오아이 기판, 그 제조방법, 그위에 제작된 에스오아이 집적회로 및 그것을 사용하여에스오아이 집적회로를 제조하는 방법 |
| US20040240034A1 (en) * | 2001-11-30 | 2004-12-02 | Scharf Bruce R. | Diffraction compensation using a patterned reflector |
| US7172911B2 (en) * | 2002-02-14 | 2007-02-06 | Silex Microsystems Ab | Deflectable microstructure and method of manufacturing the same through bonding of wafers |
| US6673697B2 (en) * | 2002-04-03 | 2004-01-06 | Intel Corporation | Packaging microelectromechanical structures |
| US6858459B2 (en) * | 2002-05-23 | 2005-02-22 | Institute Of Microelectronics | Method of fabricating micro-mirror switching device |
| KR100471153B1 (ko) * | 2002-11-27 | 2005-03-10 | 삼성전기주식회사 | Ｓｏｉ웨이퍼를 이용한 mems 디바이스의 제조 및 접지 방법 |
| US6972255B2 (en) * | 2003-07-28 | 2005-12-06 | Freescale Semiconductor, Inc. | Semiconductor device having an organic anti-reflective coating (ARC) and method therefor |
| US7056757B2 (en) * | 2003-11-25 | 2006-06-06 | Georgia Tech Research Corporation | Methods of forming oxide masks with submicron openings and microstructures formed thereby |
| US7355793B2 (en) * | 2004-05-19 | 2008-04-08 | The Regents Of The University Of California | Optical system applicable to improving the dynamic range of Shack-Hartmann sensors |
| US7067355B2 (en) * | 2004-05-26 | 2006-06-27 | Hewlett-Packard Development Company, L.P. | Package having bond-sealed underbump |
| US20080119002A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a MEMS device |
| US20080116534A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a MEMS device |
| US20080119001A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a mems device |
| US20080119003A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a MEMS device |
| US7691746B2 (en) * | 2007-07-31 | 2010-04-06 | Hewlett-Packard Development Company, L.P. | Formation of silicon nitride layer on back side of substrate |
| US20090088618A1 (en) | 2007-10-01 | 2009-04-02 | Arneson Michael R | System and Method for Manufacturing a Swallowable Sensor Device |
| WO2009120900A2 (en) * | 2008-03-26 | 2009-10-01 | Endevco Corporation | Interconnection system on a plane adjacent to a solid-state device structure |
| DE102014002824A1 (de) * | 2014-02-25 | 2015-08-27 | Northrop Grumman Litef Gmbh | Verfahren zur Herstellung eines Bauteils |
| DE102016200494A1 (de) | 2016-01-15 | 2017-07-20 | Robert Bosch Gmbh | Verfahren zum Herstellen eines mehrschichtigen MEMS-Bauelements und entsprechendes mehrschichtiges MEMS-Bauelement |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6149190A (en) | 1993-05-26 | 2000-11-21 | Kionix, Inc. | Micromechanical accelerometer for automotive applications |
| DE4318466B4 (de) | 1993-06-03 | 2004-12-09 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Sensors |
| US5476819A (en) | 1993-07-26 | 1995-12-19 | Litton Systems, Inc. | Substrate anchor for undercut silicon on insulator microstructures |
| DE4331798B4 (de) * | 1993-09-18 | 2004-08-26 | Robert Bosch Gmbh | Verfahren zur Herstellung von mikromechanischen Bauelementen |
| US5589083A (en) | 1993-12-11 | 1996-12-31 | Electronics And Telecommunications Research Institute | Method of manufacturing microstructure by the anisotropic etching and bonding of substrates |
| US5824186A (en) * | 1993-12-17 | 1998-10-20 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
| US5645684A (en) | 1994-03-07 | 1997-07-08 | The Regents Of The University Of California | Multilayer high vertical aspect ratio thin film structures |
| US5660680A (en) | 1994-03-07 | 1997-08-26 | The Regents Of The University Of California | Method for fabrication of high vertical aspect ratio thin film structures |
| US5484073A (en) | 1994-03-28 | 1996-01-16 | I/O Sensors, Inc. | Method for fabricating suspension members for micromachined sensors |
| US5569355A (en) | 1995-01-11 | 1996-10-29 | Center For Advanced Fiberoptic Applications | Method for fabrication of microchannel electron multipliers |
| US6084257A (en) | 1995-05-24 | 2000-07-04 | Lucas Novasensor | Single crystal silicon sensor with high aspect ratio and curvilinear structures |
| SE9502258D0 (sv) | 1995-06-21 | 1995-06-21 | Pharmacia Biotech Ab | Method for the manufacture of a membrane-containing microstructure |
| DE19603829A1 (de) | 1996-02-02 | 1997-08-07 | Daimler Benz Ag | Verfahren zur Herstellung von mikromechanischen Strukturen aus Silizium |
| US6074890A (en) | 1998-01-08 | 2000-06-13 | Rockwell Science Center, Llc | Method of fabricating suspended single crystal silicon micro electro mechanical system (MEMS) devices |
| US5853960A (en) | 1998-03-18 | 1998-12-29 | Trw Inc. | Method for producing a micro optical semiconductor lens |
| US6117344A (en) | 1998-03-20 | 2000-09-12 | Borealis Technical Limited | Method for manufacturing low work function surfaces |
| US6014240A (en) | 1998-12-01 | 2000-01-11 | Xerox Corporation | Method and apparatus for an integrated laser beam scanner using a carrier substrate |
| US6002507A (en) | 1998-12-01 | 1999-12-14 | Xerox Corpoation | Method and apparatus for an integrated laser beam scanner |
| US6238581B1 (en) | 1998-12-18 | 2001-05-29 | Eastman Kodak Company | Process for manufacturing an electro-mechanical grating device |
| US6362512B1 (en) | 1998-12-23 | 2002-03-26 | Xerox Corporation | Microelectromechanical structures defined from silicon on insulator wafers |
| US6379989B1 (en) | 1998-12-23 | 2002-04-30 | Xerox Corporation | Process for manufacture of microoptomechanical structures |
-
2000
- 2000-11-27 US US09/724,514 patent/US6479315B1/en not_active Expired - Lifetime
-
2001
- 2001-11-27 JP JP2001360361A patent/JP2002301697A/ja active Pending
- 2001-11-27 EP EP01128161A patent/EP1213259B1/en not_active Expired - Lifetime
- 2001-11-27 DE DE60128529T patent/DE60128529T2/de not_active Expired - Lifetime
-
2002
- 2002-07-11 US US10/193,804 patent/US6661070B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE60128529D1 (de) | 2007-07-05 |
| EP1213259B1 (en) | 2007-05-23 |
| EP1213259A2 (en) | 2002-06-12 |
| EP1213259A3 (en) | 2004-06-16 |
| US20020197762A1 (en) | 2002-12-26 |
| JP2002301697A (ja) | 2002-10-15 |
| US6661070B2 (en) | 2003-12-09 |
| US6479315B1 (en) | 2002-11-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE60128437T2 (de) | Verfahren zur Herstellung von mikromechanischen und mikrooptomechanischen Strukturen mit Rückseitenmetallisierung | |
| DE60128529T2 (de) | Verfahren zur Herstellung von mikromechanischen und mikrooptomechanischen Strukturen mit Freilegen von einkristallinem Silizium | |
| US5770465A (en) | Trench-filling etch-masking microfabrication technique | |
| EP0683921B1 (en) | Microstructures and single mask, single-crystal process for fabrication thereof | |
| DE60215045T2 (de) | Dreischichtige strahl-mems-einrichtung und diesbezügliche verfahren | |
| US6379989B1 (en) | Process for manufacture of microoptomechanical structures | |
| US6362512B1 (en) | Microelectromechanical structures defined from silicon on insulator wafers | |
| US20040036133A1 (en) | Particle filter for partially enclosed microelectromechanical systems | |
| DE60313410T2 (de) | Herstellung von MEMS-Bauelementen mit Spin-on-Glass | |
| EP0418423B1 (de) | Verfahren zum anisotropen Ätzen von Silizium | |
| DE60128440T2 (de) | Verfahren zur Herstellung von mikromechanischen und mikrooptomechanischen Strukturen mit einem aufgebrachten Muster | |
| DE102005002967B4 (de) | Verfahren zum Herstellen eines Bauelementes mit einem beweglichen Abschnitt | |
| US6875257B2 (en) | Particle filter for microelectromechanical systems | |
| DE10102993B4 (de) | Herstellungsverfahren für ein mikromechanisches Bauelement | |
| DE102005023699B4 (de) | Verfahren zur Herstellung eines mikromechanischen Bauelements mit einer Membran | |
| Hofmann et al. | Monolithic three-dimensional single-crystal silicon microelectromechanical systems | |
| US6429034B1 (en) | Method of making high aspect ratio features during surface micromachining | |
| KR19980025599A (ko) | 실리콘 미소 구조체 제조 방법 | |
| CN118033819A (zh) | 高纵横比波导及其制备方法和半导体器件 | |
| DE102022208514A1 (de) | Verfahren zur Herstellung von mikroelektromechanischen Strukturen | |
| DE102005025722A1 (de) | Optische Linse mit elektrisch einstellbarer Brennweite |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |