JP2002301697A - 単結晶シリコンの露光の工程を備える、マイクロメカニカルおよびマイクロオプトメカニカルな構造物を製造するための方法 - Google Patents
単結晶シリコンの露光の工程を備える、マイクロメカニカルおよびマイクロオプトメカニカルな構造物を製造するための方法Info
- Publication number
- JP2002301697A JP2002301697A JP2001360361A JP2001360361A JP2002301697A JP 2002301697 A JP2002301697 A JP 2002301697A JP 2001360361 A JP2001360361 A JP 2001360361A JP 2001360361 A JP2001360361 A JP 2001360361A JP 2002301697 A JP2002301697 A JP 2002301697A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- selected area
- crystal silicon
- polysilicon
- mechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 50
- 230000008569 process Effects 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 16
- 229910052710 silicon Inorganic materials 0.000 title abstract description 15
- 239000010703 silicon Substances 0.000 title abstract description 14
- 239000013078 crystal Substances 0.000 title abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 54
- 229920005591 polysilicon Polymers 0.000 claims abstract description 52
- 230000003287 optical effect Effects 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 134
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 26
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 2
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 description 32
- 238000012545 processing Methods 0.000 description 24
- 239000010409 thin film Substances 0.000 description 22
- 238000005459 micromachining Methods 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 101150000715 DA18 gene Proteins 0.000 description 1
- 101150042515 DA26 gene Proteins 0.000 description 1
- 101000617725 Homo sapiens Pregnancy-specific beta-1-glycoprotein 2 Proteins 0.000 description 1
- 208000005647 Mumps Diseases 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical group ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- 102100022019 Pregnancy-specific beta-1-glycoprotein 2 Human genes 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000002120 advanced silicon etching Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 208000010805 mumps infectious disease Diseases 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/05—Type of movement
- B81B2203/058—Rotation out of a plane parallel to the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0135—Controlling etch progression
- B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
- B81C2201/0163—Controlling internal stress of deposited layers
- B81C2201/0164—Controlling internal stress of deposited layers by doping the layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/05—Temporary protection of devices or parts of the devices during manufacturing
- B81C2201/056—Releasing structures at the end of the manufacturing process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Micromachines (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/724,514 | 2000-11-27 | ||
| US09/724,514 US6479315B1 (en) | 2000-11-27 | 2000-11-27 | Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002301697A true JP2002301697A (ja) | 2002-10-15 |
| JP2002301697A5 JP2002301697A5 (enExample) | 2004-11-11 |
Family
ID=24910720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001360361A Pending JP2002301697A (ja) | 2000-11-27 | 2001-11-27 | 単結晶シリコンの露光の工程を備える、マイクロメカニカルおよびマイクロオプトメカニカルな構造物を製造するための方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6479315B1 (enExample) |
| EP (1) | EP1213259B1 (enExample) |
| JP (1) | JP2002301697A (enExample) |
| DE (1) | DE60128529T2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101164690B1 (ko) * | 2003-07-28 | 2012-07-11 | 프리스케일 세미컨덕터, 인크. | 유기 ａｒｃ를 구비하는 반도체 장치 및 그것을 위한 방법 |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6614110B1 (en) * | 1994-12-22 | 2003-09-02 | Benedict G Pace | Module with bumps for connection and support |
| US6506620B1 (en) * | 2000-11-27 | 2003-01-14 | Microscan Systems Incorporated | Process for manufacturing micromechanical and microoptomechanical structures with backside metalization |
| JP2002334927A (ja) * | 2001-05-11 | 2002-11-22 | Hitachi Ltd | 半導体装置の製造方法 |
| KR100456526B1 (ko) * | 2001-05-22 | 2004-11-09 | 삼성전자주식회사 | 식각저지막을 갖는 에스오아이 기판, 그 제조방법, 그위에 제작된 에스오아이 집적회로 및 그것을 사용하여에스오아이 집적회로를 제조하는 방법 |
| US20040240034A1 (en) * | 2001-11-30 | 2004-12-02 | Scharf Bruce R. | Diffraction compensation using a patterned reflector |
| US7172911B2 (en) * | 2002-02-14 | 2007-02-06 | Silex Microsystems Ab | Deflectable microstructure and method of manufacturing the same through bonding of wafers |
| US6673697B2 (en) * | 2002-04-03 | 2004-01-06 | Intel Corporation | Packaging microelectromechanical structures |
| US6858459B2 (en) * | 2002-05-23 | 2005-02-22 | Institute Of Microelectronics | Method of fabricating micro-mirror switching device |
| KR100471153B1 (ko) * | 2002-11-27 | 2005-03-10 | 삼성전기주식회사 | Ｓｏｉ웨이퍼를 이용한 mems 디바이스의 제조 및 접지 방법 |
| US7056757B2 (en) * | 2003-11-25 | 2006-06-06 | Georgia Tech Research Corporation | Methods of forming oxide masks with submicron openings and microstructures formed thereby |
| US7355793B2 (en) * | 2004-05-19 | 2008-04-08 | The Regents Of The University Of California | Optical system applicable to improving the dynamic range of Shack-Hartmann sensors |
| US7067355B2 (en) * | 2004-05-26 | 2006-06-27 | Hewlett-Packard Development Company, L.P. | Package having bond-sealed underbump |
| US20080119002A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a MEMS device |
| US20080116534A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a MEMS device |
| US20080119001A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a mems device |
| US20080119003A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a MEMS device |
| US7691746B2 (en) * | 2007-07-31 | 2010-04-06 | Hewlett-Packard Development Company, L.P. | Formation of silicon nitride layer on back side of substrate |
| US20090088618A1 (en) | 2007-10-01 | 2009-04-02 | Arneson Michael R | System and Method for Manufacturing a Swallowable Sensor Device |
| WO2009120900A2 (en) * | 2008-03-26 | 2009-10-01 | Endevco Corporation | Interconnection system on a plane adjacent to a solid-state device structure |
| DE102014002824A1 (de) * | 2014-02-25 | 2015-08-27 | Northrop Grumman Litef Gmbh | Verfahren zur Herstellung eines Bauteils |
| DE102016200494A1 (de) | 2016-01-15 | 2017-07-20 | Robert Bosch Gmbh | Verfahren zum Herstellen eines mehrschichtigen MEMS-Bauelements und entsprechendes mehrschichtiges MEMS-Bauelement |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6149190A (en) | 1993-05-26 | 2000-11-21 | Kionix, Inc. | Micromechanical accelerometer for automotive applications |
| DE4318466B4 (de) | 1993-06-03 | 2004-12-09 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Sensors |
| US5476819A (en) | 1993-07-26 | 1995-12-19 | Litton Systems, Inc. | Substrate anchor for undercut silicon on insulator microstructures |
| DE4331798B4 (de) * | 1993-09-18 | 2004-08-26 | Robert Bosch Gmbh | Verfahren zur Herstellung von mikromechanischen Bauelementen |
| US5589083A (en) | 1993-12-11 | 1996-12-31 | Electronics And Telecommunications Research Institute | Method of manufacturing microstructure by the anisotropic etching and bonding of substrates |
| US5824186A (en) * | 1993-12-17 | 1998-10-20 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
| US5645684A (en) | 1994-03-07 | 1997-07-08 | The Regents Of The University Of California | Multilayer high vertical aspect ratio thin film structures |
| US5660680A (en) | 1994-03-07 | 1997-08-26 | The Regents Of The University Of California | Method for fabrication of high vertical aspect ratio thin film structures |
| US5484073A (en) | 1994-03-28 | 1996-01-16 | I/O Sensors, Inc. | Method for fabricating suspension members for micromachined sensors |
| US5569355A (en) | 1995-01-11 | 1996-10-29 | Center For Advanced Fiberoptic Applications | Method for fabrication of microchannel electron multipliers |
| US6084257A (en) | 1995-05-24 | 2000-07-04 | Lucas Novasensor | Single crystal silicon sensor with high aspect ratio and curvilinear structures |
| SE9502258D0 (sv) | 1995-06-21 | 1995-06-21 | Pharmacia Biotech Ab | Method for the manufacture of a membrane-containing microstructure |
| DE19603829A1 (de) | 1996-02-02 | 1997-08-07 | Daimler Benz Ag | Verfahren zur Herstellung von mikromechanischen Strukturen aus Silizium |
| US6074890A (en) | 1998-01-08 | 2000-06-13 | Rockwell Science Center, Llc | Method of fabricating suspended single crystal silicon micro electro mechanical system (MEMS) devices |
| US5853960A (en) | 1998-03-18 | 1998-12-29 | Trw Inc. | Method for producing a micro optical semiconductor lens |
| US6117344A (en) | 1998-03-20 | 2000-09-12 | Borealis Technical Limited | Method for manufacturing low work function surfaces |
| US6014240A (en) | 1998-12-01 | 2000-01-11 | Xerox Corporation | Method and apparatus for an integrated laser beam scanner using a carrier substrate |
| US6002507A (en) | 1998-12-01 | 1999-12-14 | Xerox Corpoation | Method and apparatus for an integrated laser beam scanner |
| US6238581B1 (en) | 1998-12-18 | 2001-05-29 | Eastman Kodak Company | Process for manufacturing an electro-mechanical grating device |
| US6362512B1 (en) | 1998-12-23 | 2002-03-26 | Xerox Corporation | Microelectromechanical structures defined from silicon on insulator wafers |
| US6379989B1 (en) | 1998-12-23 | 2002-04-30 | Xerox Corporation | Process for manufacture of microoptomechanical structures |
-
2000
- 2000-11-27 US US09/724,514 patent/US6479315B1/en not_active Expired - Lifetime
-
2001
- 2001-11-27 JP JP2001360361A patent/JP2002301697A/ja active Pending
- 2001-11-27 EP EP01128161A patent/EP1213259B1/en not_active Expired - Lifetime
- 2001-11-27 DE DE60128529T patent/DE60128529T2/de not_active Expired - Lifetime
-
2002
- 2002-07-11 US US10/193,804 patent/US6661070B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101164690B1 (ko) * | 2003-07-28 | 2012-07-11 | 프리스케일 세미컨덕터, 인크. | 유기 ａｒｃ를 구비하는 반도체 장치 및 그것을 위한 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE60128529D1 (de) | 2007-07-05 |
| EP1213259B1 (en) | 2007-05-23 |
| DE60128529T2 (de) | 2008-01-24 |
| EP1213259A2 (en) | 2002-06-12 |
| EP1213259A3 (en) | 2004-06-16 |
| US20020197762A1 (en) | 2002-12-26 |
| US6661070B2 (en) | 2003-12-09 |
| US6479315B1 (en) | 2002-11-12 |
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Legal Events
| Date | Code | Title | Description |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060912 |
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| A521 | Written amendment |
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