JP4804752B2 - 犠牲層をエッチングするための導電性エッチストップ - Google Patents
犠牲層をエッチングするための導電性エッチストップ Download PDFInfo
- Publication number
- JP4804752B2 JP4804752B2 JP2004517600A JP2004517600A JP4804752B2 JP 4804752 B2 JP4804752 B2 JP 4804752B2 JP 2004517600 A JP2004517600 A JP 2004517600A JP 2004517600 A JP2004517600 A JP 2004517600A JP 4804752 B2 JP4804752 B2 JP 4804752B2
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- JP
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- Prior art keywords
- metal electrode
- layer
- insulating layer
- metal
- sacrificial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/045—Optical switches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
Description
微小電子機械システム(MEMS)は一般に、電気信号を用いて付勢され得る微小機械構造体を含む。MEMSデバイスの例は、カリフォルニア州サニーベイルのSilicon Light Machines,Inc.から入手可能なGrating Light ValveTM(GLV)デバイスである。GLVタイプのデバイスは、以下の特許文献で説明されている。即ち、それらの特許文献は、Bloom他に対する米国特許第5,311,360号、Bloom他に対する米国特許第5,841,579号、及びBornstein他に対する米国特許第5,661,592号であり、参照により本明細書にそっくりそのまま組み込まれる。
一実施形態において、マイクロデバイスは、金属電極の上に犠牲層を堆積し、犠牲層の上に可動構造体を形成し、次いで希ガスのフッ化物でもって犠牲層をエッチングすることにより形成される。金属電極は、犠牲層のエッチングにおいてエッチストップとしても働く金属材料からなるので、電荷は、認められるほどに金属電極に蓄積しない。これは、可動構造体の駆動特性の安定化に役立つ。一実施形態において、可動構造体は、光変調器のリボンである。
本発明の開示において、本発明の実施形態の完全な理解を提供するために、プロセスのパラメータ、材料、プロセス工程、及び構造の例のような多くの特定の細部が提供される。しかしながら、当業者には理解されるように、本発明は、1つ又は複数の特定の細部を有さずに実施され得る。また、よく知られた細部は、本発明の態様を不明瞭にしないように図示または説明されない。
Claims (17)
- マイクロデバイスを形成する方法であって、その方法が、
基板の上に絶縁層を堆積し、
前記絶縁層の上に第1の金属電極を形成し、
前記第1の金属電極の上に犠牲層を堆積し、
前記犠牲層の上に可動構造体を形成し、前記可動構造体の下にある前記絶縁層が、前記第1の金属電極で前記犠牲層から隔てられており、及び
前記第1の金属電極と前記可動構造体との間にエアーギャップを形成するように、前記絶縁層を保護するエッチストップとして前記第1の金属電極を使用して、前記可動構造体と前記第1の金属電極との間の前記犠牲層を希ガスのフッ化物でエッチングすることを含む、方法。 - 前記第1の金属電極が窒化チタンからなる、請求項1の方法。
- 前記犠牲層が500℃より高い温度で堆積される、請求項1の方法。
- 前記犠牲層がアモルファスシリコンからなる、請求項1の方法。
- 希ガスのフッ化物が二フッ化キセノンからなる、請求項1の方法。
- 前記犠牲層の上に可動構造体を形成することが、
前記犠牲層の上にリボン材料を堆積し、及び
前記リボン材料の上に金属を堆積することを含む、請求項1の方法。 - 前記リボン材料が窒化ケイ素からなる、請求項6の方法。
- 前記金属がアルミニウムからなる、請求項6の方法。
- 前記第1の金属電極が、少なくとも900℃まで安定している材料からなる、請求項1の方法。
- 基板の上にチタンを堆積し、アンモニアを含む環境に前記チタンをさらすことにより、前記第1の金属電極を形成することを更に含む、請求項1の方法。
- 前記絶縁層が二酸化ケイ素からなる、請求項1の方法。
- 前記第1の金属電極が前記二酸化ケイ素の絶縁層と反応して、それらの間の付着力を増加させる、請求項11の方法。
- マイクロデバイスを形成する方法であって、その方法が、
基板の上に絶縁層を堆積するステップと、
前記絶縁層の上に第1の金属電極を形成するステップと、
前記第1の金属電極の上に犠牲層を堆積するステップであって、前記絶縁層が、前記第1の金属電極で前記犠牲層から隔てられている、堆積するステップと、
前記第1の金属電極と可動構造体との間にエアーギャップを形成するように、前記絶縁層を保護するエッチストップとして前記第1の金属電極を使用して、希ガスのフッ化物で前記犠牲層をエッチングするステップとを含む、方法。 - 前記犠牲層を堆積するステップが、前記第1の金属電極の上にアモルファスシリコン層を堆積することを含む、請求項13の方法。
- 前記可動構造体が、
前記犠牲層の上の弾性構造体と、
前記弾性構造体の上にある第2の金属電極とを含む、請求項12の方法。 - 前記絶縁層が二酸化ケイ素からなる、請求項13の方法。
- 前記第1の金属電極が前記二酸化ケイ素の絶縁層と反応して、それらの間の付着力を増加させる、請求項16の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/187,028 US6777258B1 (en) | 2002-06-28 | 2002-06-28 | Conductive etch stop for etching a sacrificial layer |
US10/187,028 | 2002-06-28 | ||
PCT/US2003/017027 WO2004003981A1 (en) | 2002-06-28 | 2003-05-30 | Conductive etch stop for etching a sacrificial layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005531421A JP2005531421A (ja) | 2005-10-20 |
JP4804752B2 true JP4804752B2 (ja) | 2011-11-02 |
Family
ID=29999337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004517600A Expired - Lifetime JP4804752B2 (ja) | 2002-06-28 | 2003-05-30 | 犠牲層をエッチングするための導電性エッチストップ |
Country Status (6)
Country | Link |
---|---|
US (3) | US6777258B1 (ja) |
EP (1) | EP1532658A4 (ja) |
JP (1) | JP4804752B2 (ja) |
CN (1) | CN100483610C (ja) |
AU (1) | AU2003238819A1 (ja) |
WO (1) | WO2004003981A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7026697B2 (en) | 2000-03-31 | 2006-04-11 | Shipley Company, L.L.C. | Microstructures comprising a dielectric layer and a thin conductive layer |
US7045381B1 (en) * | 2002-06-28 | 2006-05-16 | Silicon Light Machines Corporation | Conductive etch stop for etching a sacrificial layer |
US6777258B1 (en) * | 2002-06-28 | 2004-08-17 | Silicon Light Machines, Inc. | Conductive etch stop for etching a sacrificial layer |
JP4200892B2 (ja) * | 2003-12-18 | 2008-12-24 | ソニー株式会社 | 半導体発光装置の製造方法 |
US8053850B2 (en) | 2005-06-30 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Minute structure, micromachine, organic transistor, electric appliance, and manufacturing method thereof |
US7767543B2 (en) | 2005-09-06 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a micro-electro-mechanical device with a folded substrate |
JP2007220704A (ja) * | 2006-02-14 | 2007-08-30 | Mitsubishi Electric Corp | 半導体装置 |
US7547568B2 (en) * | 2006-02-22 | 2009-06-16 | Qualcomm Mems Technologies, Inc. | Electrical conditioning of MEMS device and insulating layer thereof |
JP4972350B2 (ja) * | 2006-06-30 | 2012-07-11 | 株式会社日立製作所 | 半導体装置の製造方法 |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US9190488B1 (en) * | 2014-08-13 | 2015-11-17 | Globalfoundries Inc. | Methods of forming gate structure of semiconductor devices and the resulting devices |
Citations (6)
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JPH0884484A (ja) * | 1994-09-09 | 1996-03-26 | Canon Inc | マイクロ構造体の形成法 |
JPH11217672A (ja) * | 1998-01-30 | 1999-08-10 | Sony Corp | 金属窒化物膜の化学的気相成長方法およびこれを用いた電子装置の製造方法 |
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JP2000180739A (ja) * | 1998-12-18 | 2000-06-30 | Eastman Kodak Co | 電気機械格子装置の製造方法 |
JP2001341314A (ja) * | 2000-06-01 | 2001-12-11 | Ricoh Co Ltd | 液滴吐出ヘッド及びその製造方法、インクジェット記録装置並びにマイクロアクチュエータ |
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-
2002
- 2002-06-28 US US10/187,028 patent/US6777258B1/en not_active Expired - Lifetime
-
2003
- 2003-05-30 EP EP03734278A patent/EP1532658A4/en not_active Ceased
- 2003-05-30 CN CNB038206927A patent/CN100483610C/zh not_active Expired - Fee Related
- 2003-05-30 JP JP2004517600A patent/JP4804752B2/ja not_active Expired - Lifetime
- 2003-05-30 AU AU2003238819A patent/AU2003238819A1/en not_active Abandoned
- 2003-05-30 WO PCT/US2003/017027 patent/WO2004003981A1/en active Application Filing
-
2004
- 2004-07-15 US US10/891,916 patent/US20040245217A1/en not_active Abandoned
-
2005
- 2005-07-28 US US11/192,621 patent/US20050260782A1/en not_active Abandoned
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JPH0884484A (ja) * | 1994-09-09 | 1996-03-26 | Canon Inc | マイクロ構造体の形成法 |
JPH11217672A (ja) * | 1998-01-30 | 1999-08-10 | Sony Corp | 金属窒化物膜の化学的気相成長方法およびこれを用いた電子装置の製造方法 |
JP2000168077A (ja) * | 1998-12-07 | 2000-06-20 | Ricoh Co Ltd | インクジェットヘッド及びその製造方法 |
JP2000180739A (ja) * | 1998-12-18 | 2000-06-30 | Eastman Kodak Co | 電気機械格子装置の製造方法 |
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US20020047172A1 (en) * | 2000-08-23 | 2002-04-25 | Reid Jason S. | Transition metal dielectric alloy materials for MEMS |
Also Published As
Publication number | Publication date |
---|---|
CN100483610C (zh) | 2009-04-29 |
EP1532658A4 (en) | 2007-02-28 |
AU2003238819A1 (en) | 2004-01-19 |
CN1679140A (zh) | 2005-10-05 |
US20050260782A1 (en) | 2005-11-24 |
US20040245217A1 (en) | 2004-12-09 |
JP2005531421A (ja) | 2005-10-20 |
WO2004003981A1 (en) | 2004-01-08 |
EP1532658A1 (en) | 2005-05-25 |
US6777258B1 (en) | 2004-08-17 |
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