JP2002280481A - Package for housing high-frequency circuit element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that, when a plurality of high-frequency circuit elements are housed in the same high-frequency package, an electromagnetic mutual interference occurs between the high-frequency circuit element and, when a cover made of a metal is welded to a frame, a thermal stress is generated at a connecting part of the cover to the frame to bring about a crack, at a pressure reducing time in a high-frequency package when the circuit elements are housed in the package, a warp is generated at the cover and a stress is generated at the connecting part of the cover to the frame by the warp to bring about the crack. SOLUTION: The package for housing the high-frequency circuit elements comprises the cover 2 made of the metal having a ceiling part 2a covering a placing part 1a; and a partition part 2b formed to partition the placing parts 1a by forming a double sidewall vertically suspended from the ceiling part 2a toward a boundary between the placing parts, and formed so as not to contact at a lower end with the upper surface of a base 1 and a bottom plate 2d for coupling the lower ends 3c of respective sidewalls of the double sidewall.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for accommodating a high-frequency circuit element, and more particularly to a package for accommodating a high-frequency circuit element in an electromagnetically shielded mounting portion.

[0002]

2. Description of the Related Art In recent years, there has been an increasing demand for higher power in recent years, such as a conventional automotive radar using millimeter waves, a high frequency radio apparatus using radio waves in a frequency band of 300 MHz or more, and a radio terminal. Are becoming smaller and lower cost. For this purpose, a plurality of high-frequency circuit elements having a function such as a filter function are mounted in one high-frequency circuit element storage package (hereinafter, referred to as a high-frequency package).

As an example of such a conventional high-frequency package, there is a high-frequency package C for a microwave integrated circuit shown in a plan view of FIG. 4 and a cross-sectional view of FIG. In the figure, D is a metal base, 101 is a dielectric substrate, 101a is a mounting portion, and 102 is a metal lid made of a ceiling 102a and a partition 102b extending downward from the ceiling 102a. In addition, 102c is a lower end of the partition 102b.
Reference numeral 103 denotes a through conductor that is arranged on the dielectric substrate 101 and is filled with a conductive material as a grounding conductor. Reference numeral 104 denotes a high-frequency circuit element. Reference numeral 105 denotes a metallized wiring formed on the dielectric substrate 101. A layer 106 is a bonding wire, and 107 is a sealing glass such as a low melting point glass (glass frit) for electrically insulating the metal pin 109 from the metal substrate D.

In the high-frequency package C, the dielectric substrate 101 is joined to the upper surface of the metal substrate D, and the mounting portion 101a on which the high-frequency circuit element 104 is mounted is formed by the upper surface of the metal substrate D. . High frequency circuit element 1
The electrode on the substrate 04 is formed on the metallized wiring layer 105 formed on the dielectric substrate 101 via the bonding wire 106.
To the metal pin 10 from the metallized wiring layer 105.
9 is electrically connected to an external electric circuit (not shown).

[0005] The metal lid 102 has a partition 102b, which is integral with the metal lid 102 and extends downward in the high-frequency package C so as to extend downward from the ceiling 102c. The partition 102b is joined by a conductive adhesive to the upper surface of the through conductor 103, the lower end 102c of which is exposed on the upper surface of the dielectric substrate 101. Then, the high-frequency circuit element 104 mounted on the mounting portion 101a is formed by the conductive material filled in the through conductor 103 and the metal base D.
Is electromagnetically shielded. Further, the high-frequency signal emitted from the high-frequency circuit element 104 is transmitted from the metallized wiring layer 105 to the metal pin 109 by the bonding wire 106 and is led out.

The high-frequency package C includes a dielectric substrate 1
Since the dielectric substrate 101 has a property of transmitting a high-frequency signal, the dielectric substrate 101 is provided with a plurality of through conductors 103 which are connected to the partitioning portion 102b and are arranged vertically through the dielectric substrate 101 as a shield for the high-frequency signal. It has a structure.

The dielectric substrate 1 is provided on the upper surface of the metal base D.
01, the high-frequency circuit element 104 is mounted on the mounting portion 101a, and then the electrode of the high-frequency circuit element 104 is connected to the metallized wiring layer 105 via the bonding wire 106, and thereafter, a partition 102b is provided. The metal cover 102 is connected to the through conductor 103 in which the lower end 102 c of the partition 102 b is exposed on the surface of the dielectric substrate 101.
Of the high-frequency circuit element 104 is hermetically sealed with a lid (not shown). And a high-frequency circuit device as a microwave integrated circuit device (Japanese Patent Laid-Open No. 2000-299).
398).

[0008]

However, in the above-described conventional high-frequency package, electromagnetic waves may leak from the dielectric substrate 101 between the respective through conductors 103, and the electromagnetic waves leak as the frequency increases. There is a problem that the interference increases due to electromagnetic waves between the plurality of high-frequency circuit elements 104 mounted on the mounting portion 101a. For example, when the high-frequency circuit element 104 is used for a communication device equipped with a transceiver, it causes problems such as occurrence of troubles such as saturation of the receiver and increase in reception noise.

When the dielectric substrate 101 on which the through conductor 103 is formed as described above is used, the leakage of the electromagnetic wave is not small. To prevent the leakage, the dielectric substrate is replaced with the dielectric substrate. There are a configuration in which a metallized layer is entirely applied to the upper surface and side portions of the substrate 101, and a configuration in which a metal shielding plate is attached between the mounting portions 101a with a brazing material.

However, in a configuration in which the metallization layer is entirely applied to the upper surface and the side portions of the dielectric substrate 101, when the metallization layer is printed on the side portions of the dielectric substrate 101,
In some cases, printing by a printing machine is not possible depending on the shape of the dielectric substrate 101. In this case, printing must be performed by hand coating. For this reason, a variation occurs in the print thickness, and cracks may occur in the metallized layer due to the thickness variation. Then, the electromagnetic wave leaks from the crack, which may cause noise in other high-frequency circuit elements 104, which is a problem.

In the configuration in which the metal shielding plate is attached between the mounting portions 101a with the brazing material, when the metal shielding plate is joined to the metal base D with the brazing material,
When the brazing material flows into the mounting portion 101a of the high-frequency circuit element 104, the high-frequency circuit element 104 may be inclined and joined, and this inclination may cause a bonding failure of the bonding wire during wire bonding, resulting in a high-frequency signal. There is a problem that transmission may not be performed normally.

In the above conventional example, the metal lid 102 having the partition portion 102b is made of, for example, iron (Fe) -nickel (N
i)-Dielectric substrate 1 made of cobalt (Co) alloy or the like
01 is often made of an organic substrate material such as an epoxy resin. At this time, the thermal expansion coefficient of the metal lid 102 is about 1/2 of the thermal expansion coefficient of the dielectric substrate 101.
However, since the lower end 102c of the partition 102b and the dielectric substrate 101 are joined by a conductive adhesive,
The thermal stress generated due to the difference between the respective coefficients of thermal expansion is reduced by the conductive adhesive, so that cracks or the like do not occur at the junction between the partition 102b and the dielectric substrate 101.

However, since the dielectric substrate 101 is made of an organic substrate material such as an epoxy resin, it easily absorbs moisture from the outside, so that the high-frequency circuit element 104 is hermetically sealed with the metal lid 102. Also had to be configured to be further covered by a separate lid (not shown).

However, since the cover must be covered by a separate cover, the joint between the cover and the metal base D must be secured on the upper surface of the metal base D. Have become unable to meet the market demand for miniaturization.

As another conventional example, as shown in the cross-sectional view of FIG. 6, a metal material is formed on the upper surface of a dielectric substrate 201 in which a concave portion for accommodating an electronic component 204 is formed. A ceramic high-frequency package F is known in which a seal frame E is joined, a metal lid 202 is joined to the upper surface of the seal frame E by seam welding, and an electronic component 204 such as a piezoelectric resonator is hermetically sealed inside. (See Japanese Patent Application Laid-Open No. 8-274208). In this ceramic high-frequency package F, the metal lid 202 is attached to the upper surface of the seal frame E by a known seam welding method.

In the seam welding method, a metal lid 202 in which a pair of roller-like electrodes is placed on a seal frame E, for example, is used.
Current is caused to flow while rolling around the seal frame E, and the Ni plating layer or the like previously applied to the seal frame E or the metal lid 202 is locally melted by the generated Joule heat. This is a welding method in which the metal lid 202 is joined thereon.

In order to perform seam welding, it is necessary to increase the surface resistance of the metal lid 202 to reduce the current flowing in the surface direction and secure the magnitude of the current flowing in the welding portion. Have been done. As one of them, a concave portion 202a is formed on the lower surface of the metal lid 202 to reduce the cross-sectional area and increase the surface resistance. The reduction in the cross-sectional area of the metal lid 202 due to the formation of the concave portion 202a lowers the bending strength of the metal lid 202, but the surface of the metal lid 202 is compensated for in order to compensate for this reduction in bending strength. Ridge 20
2b is formed.

However, in the ceramic high-frequency package F having such a metal lid 202, helium (He) is pressurized to several atmospheres to forcibly start the inside of the ceramic high-frequency package F from a defective portion of the ceramic high-frequency package F. When the airtightness is inspected by a He pressure test or the like in which He is pressed into the metal, a stress exceeding the bending strength of the metal lid 202 acts on the lid at the time of pressurization by He, and as a result, the lid is convex inward. In some cases.

At this time, micro cracks may occur at the joint between the metal lid 202 and the seal frame E, and the micro cracks may cause a temperature change when the electronic component 204 housed in the ceramic high-frequency package F operates. As a result, the hermeticity inside the ceramic high-frequency package F is impaired, moisture penetrates into the inside, and the wiring of the electronic component 204 is short-circuited.

Accordingly, the present invention has been completed in view of the above problems, and an object of the present invention is to prevent mutual interference between a plurality of high-frequency circuit elements due to leakage of electromagnetic waves. For example, the high-frequency circuit elements include a transceiver. It is intended to prevent the occurrence of troubles such as saturation of a receiver and increase in reception noise when used for a communication device. Another object is to eliminate the need for a cover separate from the metal cover and to reduce the size. Furthermore, the airtightness inside the high-frequency package can be maintained by preventing the occurrence of microcracks at the joint between the metal lid 202 and the seal frame E due to the warpage of the metal lid 202.

[0021]

A high-frequency package according to the present invention includes a base having a plurality of mounting portions on which a plurality of high-frequency circuit elements are mounted, and a plurality of mounting portions on the upper surface of the base. In a high-frequency circuit element storage package including a frame body attached so as to surround and a metal lid body having an outer peripheral portion attached to an upper surface of the frame body, the metal lid body may have a front end. A ceiling portion that covers the mounting portion, a double side wall portion that is vertically provided from the ceiling portion toward a boundary portion between the mounting portions and has a lower end formed so as not to contact the upper surface of the base; It is characterized in that the double side wall portion is constituted by a bottom plate portion in which lower ends of respective side walls are connected at a predetermined interval to form a partition portion formed so as to divide the mounting portions.

According to the present invention, since the metal lid having the partition for partitioning each mounting portion of the high-frequency circuit element is joined to the frame by the above configuration, each mounting portion of the high-frequency circuit element is separated by the partition portion. Are shielded from each other, so that mutual interference due to leakage of electromagnetic waves between the high-frequency circuit elements can be effectively prevented. Furthermore, since this partition part has the bottom plate part which joined the lower ends of each adjacent side wall of the double side wall part, the concave side wall part is formed by the adjacent side wall and the bottom plate part. Since it is formed, the partition portion acts like a spring that can be elastically deformed in the lateral direction. As a result, for example, when a metal lid is joined to the upper surface of the frame by a known seam welding method, even if the metal lid rapidly expands in the lateral direction due to heat applied to the metal lid, the thermal expansion does not occur. Will be absorbed by the partition. Therefore, thermal stress generated at the joint between the metal lid and the frame can be reduced, and as a result, micro cracks generated at the joint between the metal lid and the frame can be effectively prevented, and high frequency The circuit element can be operated normally and stably for a long period of time.

Further, when the high-frequency package is subjected to a helium pressurization test, the lower end of the partition abuts against the upper surface of the base, so that the amount of warpage that becomes convex inside the metal lid when the pressure is reduced is obtained. Does not exceed 100 μm. Therefore, no large stress is generated at the joint between the metal lid and the frame, and the occurrence of microcracks at this joint can be effectively prevented.

In the present invention, preferably, the distance d between the bottom plate of the partition and the upper surface of the base is 10 to 100 μm.
m.

According to the present invention, mutual interference due to leakage of electromagnetic waves between high-frequency circuit elements can be effectively prevented by setting the distance between the bottom plate of the partition and the upper surface of the base to a predetermined small value. .

In the present invention, preferably, a groove is formed between the plurality of mounting portions on the upper surface of the base so as to surround the mounting portion, and a bottom plate portion of the partition portion is formed on an inner surface of the groove. The groove is inserted into the groove so as not to touch the groove.

According to the present invention, with the above-described configuration, it is possible to more effectively prevent leakage of a high-frequency signal, and to realize more reliable electromagnetic wave shielding.

Further, in the present invention, preferably, the distance X between the outer bottom surface of the bottom plate portion and the top surface of the base is 10 to 10.
1500 μm, and the distance Y between the side wall of the partition and the inner surface of the groove is 10 to 500 μm.

According to the present invention, with the above configuration, it is possible to more effectively prevent the leakage of the high-frequency signal, and to realize a more reliable shield of the electromagnetic wave.

[0030]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A high-frequency package A according to the present invention will be described below in detail with reference to the accompanying drawings. 1 (a), 1 (b), 2 and 3 show examples of an embodiment of a high-frequency package A of the present invention. FIG. 1 (a) is a cross-sectional view when a base is made of a metal material. FIG. 1B is a cross-sectional view when the base is made of ceramics, and FIG. 2 is a partially enlarged cross-sectional view around a partition portion of the metal lid in FIG. 1A. In FIG. 3, a groove is formed between the plurality of mounting portions on the upper surface of the base so as to surround the mounting portion, and the bottom plate portion of the partition portion is inserted into the groove so as not to contact the inner surface of the groove. FIG. 4 is a partially enlarged cross-sectional view of the vicinity of a partition in a configuration in which the present invention is used.

In FIG. 1A, reference numeral 1 denotes a plurality of mounting portions 1a on each of which a plurality of high-frequency circuit elements 4 are mounted.
The base B made of a metal material having the following structure is a frame attached to the upper surface of the base 1 so as to surround the plurality of mounting portions 1a. 2 is a ceiling part 2a that covers the mounting part 1a;
A double side wall portion 2b and each side wall of the double side wall portion 2b which are vertically provided from the ceiling portion 2a toward the boundary between the mounting portions 1a and whose lower end is formed so as not to contact the upper surface of the base 1. Plate part 2 in which the lower ends 2c of the two are joined at a predetermined interval
d, and a partition 2b formed so as to divide each mounting portion 1a. Further, 4 is a high-frequency circuit element, 6 is a bonding wire, 7 is sealing glass made of low melting point glass (glass frit) or the like, and 9 is a metal pin. Such a base 1,
The high-frequency circuit element 4 is formed by the frame B and the metal lid 2.
A container for accommodating is mainly configured.

In the high-frequency package A of the present invention having such a configuration, the high-frequency circuit element 4 is mounted on the mounting portion 1a. By transmitting the metal pins 9 which penetrate the electrodes on the element 4 and the bonding wires 6 and the upper and lower surfaces of the base 1 and are insulated from the base 1 by the sealing glass 7, the inside and outside are electrically connected. Connecting.

The high-frequency circuit element 4 mounted on the mounting portion 1a includes a base 1 made of a metal material and a metal lid 2
Then, the metal cover 2 is electromagnetically shielded by a partition portion 2b vertically provided downward, and can operate normally.

The base 1 made of a metal material is made of a copper (Cu) -tungsten (W) alloy, Cu, or the like.
When made of a W alloy, a sintered body of W is impregnated with Cu at a high temperature to form a block of a Cu-W alloy, and this is subjected to a conventionally known metal working method such as cutting.
It is manufactured in a predetermined shape.

The frame B is made of a metal material or ceramics. When the frame B is made of a metal material, an Fe—Ni—Co alloy,
A material obtained by mixing and heating and melting a powder of a metal material such as an Fe-Ni alloy is rolled to a predetermined thickness by a roll rolling method, and the obtained sheet-shaped member is formed into a pipe by a conventionally known drawing method. This pipe-shaped member is processed stepwise by a conventionally known drawing method to obtain a pipe having a desired rectangular cross-sectional shape. By cutting this pipe into an appropriate length, a metal frame B having a desired size and shape is manufactured. The metal frame B is joined via a brazing material such as silver brazing so as to surround the mounting portion 1 a of the high-frequency circuit element 4 on the upper surface of the base 1.

In place of the metal frame B, Al
Ceramics such as ₂ O ₃ and AlN may be used. For example, when made of Al ₂ O ₃ , it is manufactured as follows. Al ₂ O ₃ powder and Si as sintering aid
A powder such as O ₂ , CaO, MgO, etc. is mixed with a suitable binder and a solvent to form a slurry. Next, a ceramic green sheet having a predetermined thickness is formed by a conventionally known tape forming method such as a doctor blade method, and a plurality of ceramic green sheets are prepared. Next, the ceramic green sheet is subjected to a punching process, and a metallizing layer is previously applied to a portion serving as a side wall surrounding the mounting portion 1a, a joining portion with the base 1, and a joining portion with the metal lid 2, and A ceramic frame B is obtained through a laminating step and a firing step at a temperature of about 1600 ° C.

The metallization layer is formed on a portion serving as a side wall surrounding the mounting portion 1a. Since the side wall is made of a dielectric material, electromagnetic waves pass through and mutual interference occurs between the high-frequency circuit elements 4. Because. Therefore, the surface of the dielectric is covered with a metallized layer that does not allow electromagnetic waves to pass, so that the electromagnetic waves do not pass.

The metal lid 2 is made of an Fe—Ni—Co alloy,
When made of an Fe-Ni alloy or the like, for example, made of an Fe-Ni-Co alloy, a conventionally known metal working method such as a rolling method, a press forming method, and a punching method is applied to an ingot of the Fe-Ni-Co alloy. By adopting, it is manufactured by processing a plate material formed to a predetermined thickness.

The metal lid 2 is a high-frequency package A
And a partition 2b vertically provided therein. The partition 2b is formed by, for example, applying an etching method, a press molding method, a cutting method, or the like to the metal lid 2. In the case of using the etching method, if the thickness of the metal lid 2 before processing is, for example, 2000 μm, as shown in FIG.
The outer shape of the partition 2b is formed by etching to a depth of about 00 μm, and the inside of the partition 1a is etched to a depth of about 1800 μm, for example, to form a recess 2e from the upper surface side. Thus, a partition 2b having a recess 2e inside is obtained. The thickness of the obtained partition 2b is, for example, 150 to 300 μm.
Is about 1800 μm.

Next, in the pressing method, the metal lid 2 is made of, for example, a 150-300 μm-thick plate made of the above-mentioned alloy by using a metal mold with a metal lid having a partition 2 b having a recess 2 e using a press die. Obtained by molding into body 2.
Further, in the cutting method, for example, a metal material 2 is obtained by cutting a plate material made of the above alloy having a thickness of 2000 μm from above and below. At this time, the inclination angle of the outer surface of the partition 2b and the inclination angle of the inner surface of the recess 2e can be arbitrarily set. In the pressing method and the cutting method, distortion may occur in the metal lid 2 as compared with the etching method, and a distortion correction step may be required.

Next, in FIG. 1B, reference numeral 1 denotes
a, a base made of ceramics having a metallized layer formed on its upper surface, B being a frame, 2 being a ceiling 2
a, a metal lid comprising a partition 2b and a bottom plate 2d;
4 is a high-frequency circuit element, 5 is a metallized wiring layer, 6 is a bonding wire, 8 is a through conductor, and 10 is a metal pin bonded to the lower end surface of the through conductor 8. A container for accommodating the high-frequency circuit element 4 is mainly constituted by the base 1, the frame B, and the metal lid 2.

High frequency circuit element 4 mounted on mounting section 1a
Is normally electromagnetically shielded by a metallized layer formed on the surface of a base body 1 made of ceramics, a metal lid 2, and a partition 2b vertically suspended from the metal lid 2, and operates normally. Will be done. At this time, the through conductor 8
Around the metallized wiring layer 5 formed so as to cover and cover the upper end surface of the metallized wiring layer 5, a non-formed portion of the metallized layer is provided so as not to short-circuit with the metallized layer for joining the high-frequency circuit element 4. The high frequency signal leaking from the non-formed portion hardly affects the characteristics of the high frequency package.

In the high-frequency package A having such a configuration, the high-frequency circuit element 4 is mounted on the mounting portion 1a. Electrodes, bonding wires 6 and metallized wiring layer 5 are transmitted, and further transmitted between inside and outside via a through conductor 8 and a metal pin 10 bonded to a lower end surface thereof.

The substrate 1 made of ceramic is made of, for example, an acid.
Aluminum chloride (Al_TwoO_Three) And aluminum nitride (Al
N) etc. For example, Al_TwoO_ThreeIf it consists of
Al _TwoO_ThreePowder and silica (Si
O_Two), Calcia (CaO), magnesia (MgO), etc.
Powder and a suitable binder and solvent
Into a slurry. Next, the well-known doctor shake
Ceramics of specified thickness by tape molding method such as
This ceramic green sheet is molded into a green sheet.
Prepare multiple sheets. Then, ceramic green sea
Punching the metallized wiring layer 5
Metallized layer, which serves as a bonding layer for the
The metallized layer for joining the lid 2 and the through conductor 8 are formed.
To achieve. After this, a ceramic green sheet is laminated
And fired at a temperature of about 1600 ° C.
A body 1 is obtained.

The frame B and the metal lid 2 are the same as in the case where the base 1 is made of a metal material, and the description is omitted.

Then, as shown in FIGS. 1 (a), 1 (b) and 2, a plurality of high-frequency circuit elements 4 are mounted on the mounting portion 1a.
Is mounted on the upper surface of the frame B, a metal lid 2 having a partition portion 2b suspended therefrom is joined by, for example, a seam welding method, and the high-frequency circuit element 4 is hermetically sealed and electromagnetically sealed. Are shielded from each other. At this time, the partition 2b
The distance d between the outer bottom surface of the bottom plate portion 2d and the top surface of the base 1 is 1
The thickness is preferably from 0 to 100 μm. That is, the warp may be about several tens μm between both ends of the base 1 to which the frame B is joined. At this time, it is extremely difficult to set the distance d between the bottom plate 2d and the upper surface of the base 1 to less than 10 μm. It will be difficult. When the distance d exceeds 100 μm, the bottom plate 2d
Electromagnetic waves leaking from between the upper surface of the base 1 and the upper surface of the base 1 cause mutual interference between the high-frequency circuit elements 4 to generate noise in the high-frequency circuit elements 4.

The partitioning portion 2 is formed from the upper surface side of the metal lid 2.
By forming the concave portion 2e inside the inside b, the following operation and effect are further produced. That is, the elasticity of the metal lid 2 in the lateral direction (horizontal direction) is determined by the recess 2e.
For example, when the metal lid 2 is welded to the frame B by a seam welding method,
Even if the temperature of the metal lid 2 suddenly rises and the metal lid 2 thermally expands in the horizontal direction, the size of the metal lid 2 is large because the partition portion 2b has elasticity in the horizontal direction. Does not change. Therefore, since no large thermal stress is generated at the joint between the frame B and the metal lid 2, micro cracks do not occur, and the high-frequency circuit element housed in the high-frequency package can be used for a long time. For normal operation.

According to the present invention, as shown in FIG. 3, a partition 2b is provided downward from the ceiling 2a of the metal lid 2.
Is preferably formed so that its lower end 2c is inserted into a groove 1b formed on the upper surface of the base 1 (FIG. 3 shows a case where the base 1 is made of a metal material). Thus, groove 1
By forming b on the upper surface of the base 1, the partition 2b can more effectively prevent the leakage of the electromagnetic wave, and can realize more reliable shielding of the electromagnetic wave.

When the base 1 is made of a metal material, the groove 1b is formed by, for example, a cutting method. When the base 1 is made of a ceramic, the groove 1b is formed by previously punching a ceramic green sheet serving as the base 1. Can be formed. It is preferable that a metallized layer for shielding electromagnetic waves is formed in advance on the bottom surface and the inner side surface of the groove 1b.

In the present invention, the distance X between the outer bottom surface of the bottom plate 2d of the partition 2b and the top surface of the base 1 is 10-15.
It is preferable that the distance Y between the side wall of the partition 2b and the inner surface of the groove 1b is 10 to 500 μm.
If the distance X is less than 10 μm, the lower end 2c of the partition 2b may not enter the groove 1b due to the warpage of the base 1, and in this case, it is difficult to prevent leakage of electromagnetic waves. If the distance X exceeds 1500 μm, the effect of preventing leakage of electromagnetic waves hardly changes, and the thickness of the base 1 must be further increased. When the distance Y is less than 10 μm, it becomes difficult to insert the partition 2b into the groove 1b. When the distance Y exceeds 500 μm, the electromagnetic waves reflected by the partition 2b are reflected between the side wall of the groove 1b and the partition 2b. To the bottom of the groove 1b,
In some cases, leakage may occur from the gap between the bottom plate 2d of the partition plate 2b and the bottom surface of the groove 1b to an adjacent mounting portion, and mutual interference may occur between the high-frequency circuit elements 4.

Thus, on the base 1 having the frame B on the upper surface, the high-frequency circuit element 4 is housed in the mounting portion 1a on the base 1, and thereafter, the electrode on the high-frequency circuit element 4 and the metal pin 9 are connected. It is electrically connected, or electrically connected between the high-frequency circuit element 4 and the metal pin 10 erected through the bonding wire 6, the metallized wiring layer 5, and the through conductor 8, and finally has a partition 2b. The high frequency circuit element 4 is hermetically and electromagnetically shielded by the metal lid 2 to form a high frequency package A.

It should be noted that the present invention is not limited to the above embodiment, and that various changes can be made without departing from the spirit of the present invention.

For example, in FIG.
In the case where the frame B is made of a metal material, as shown in a partially enlarged sectional view of FIG. 7, the input / output provided on the side of the frame B instead of the metal pin 9 is provided. The terminal 11 may be used to lead a high-frequency signal to the outside. In this case, the high-frequency signal is led out to the outside by the lead terminal 12 bonded to the input / output terminal 11.
In FIG. 7, only a part of the base 1, a part of the frame B, a part of the lid 2, the input / output terminals 11 and the lead terminals 12 are shown.

Further, in the example of the present embodiment, as shown in FIGS. 2 and 3, the partition 2b is formed in the vertical direction and the bottom plate 2c has a flat plate shape. May have a wedge shape in which the width decreases downward, and the bottom plate portion 2c may have a curved surface shape that is convex downward.

[0055]

According to the present invention, the metal lid is vertically installed from the ceiling covering the mounting portion to the boundary between the ceiling and the mounting portion, and the lower end does not contact the upper surface of the base. And a partition portion formed so as to divide each mounting portion by comprising a bottom plate portion in which lower ends of respective side walls in the double side wall portion are formed. Therefore, since the metal lid having a partition section that separates each mounting section of the high-frequency circuit element is joined to the frame, the mounting sections of the high-frequency circuit element are shielded from each other by the partition section, and the high-frequency circuit element is Mutual interference due to leakage of electromagnetic waves can be effectively prevented between them.

Further, since the partitioning portion has a bottom plate portion in which the lower ends of adjacent side walls are joined to each other, a double concave side wall portion is formed between the adjacent side wall and the bottom plate portion. The partition portion functions like a spring that can be elastically deformed in the horizontal direction. As a result, for example, when the metal lid is joined to the upper surface of the frame by a seam welding method, even if the metal lid rapidly expands in the lateral direction due to heat applied to the metal lid, the thermal expansion is partitioned. Absorbed in the part. Therefore, thermal stress generated at the joint between the metal lid and the frame can be reduced, and as a result, micro cracks generated at the joint between the metal lid and the frame can be effectively prevented, and high frequency The circuit element can be normally and stably operated for a long time.

Furthermore, when the high-frequency package is subjected to a helium pressurization test, the lower end of the partition abuts against the upper surface of the base, so that a warp that becomes convex on the inside of the metal lid during decompression is 100 μm. Will not be exceeded. Therefore, no large stress is generated at the joint between the metal lid and the frame, and the occurrence of microcracks at this joint can be effectively prevented.

In the present invention, preferably, the distance d between the bottom plate of the partition and the upper surface of the base is 10 to 100 μm, so that the distance between the bottom plate of the partition and the upper surface of the base is narrowed to a predetermined value. Thus, mutual interference between the high-frequency circuit elements due to leakage of the electromagnetic wave can be effectively prevented.

Further, according to the present invention, preferably, a groove is formed between the plurality of mounting portions on the upper surface of the base so as to surround the mounting portion, and the groove is formed so that the bottom plate of the partition does not contact the inner surface of the groove. , Leakage of high-frequency signals can be more effectively prevented, and more reliable shielding of electromagnetic waves can be realized.

Further, in the present invention, preferably, the distance X between the outer bottom surface of the bottom plate portion and the upper surface of the base is 10 to 1500 μm, and the distance Y between the side wall portion of the partition portion and the inner side surface of the groove is 10 to 5 μm.
When the thickness is 00 μm, leakage of a high-frequency signal can be more effectively prevented, and more reliable shielding of electromagnetic waves can be realized.

[Brief description of the drawings]

FIG. 1A is a cross-sectional view illustrating an example of an embodiment of a high-frequency package according to the present invention, in which a base is made of metal;
(B) is a sectional view showing another example of the embodiment of the high-frequency package according to the present invention, in which the base is made of ceramics.

FIG. 2 is a partially enlarged cross-sectional view of a partition part of a metal lid and a periphery of an upper surface of a base in the high-frequency package of FIG.

FIG. 3 is a partially enlarged cross-sectional view of a partition part of a metal lid and a periphery of an upper surface of a base in a high-frequency package having a groove formed on the upper surface of the base according to the present invention.

FIG. 4 is a plan view of a conventional high-frequency package for a microwave integrated circuit device.

FIG. 5 is a cross-sectional view of a conventional high-frequency package for a microwave integrated circuit device.

FIG. 6 is a sectional view showing another example of a conventional high-frequency package.

FIG. 7 is a partially enlarged cross-sectional view of a modification of the high-frequency package of the present invention.

[Explanation of symbols]

 1: Base 1a: Placement section 1b: Groove 2: Metal lid 2a: Ceiling section 2b: Partition section 2c: Lower end 2d: Bottom plate section 2e: Concave section 4: High frequency circuit element A: High frequency package B: Frame

Claims (4)

[Claims] 1. A base body having a plurality of mounting portions on each of which a plurality of high-frequency circuit elements are mounted, and a frame attached to the upper surface of the base so as to surround the plurality of mounting portions. And a high-frequency circuit element housing package comprising: a metal lid having an outer peripheral portion attached to an upper surface of the frame.
The metal lid body is formed such that a ceiling portion covering the mounting portion and the ceiling portion are vertically provided from the ceiling portion toward a boundary portion between the mounting portions, and a lower end does not contact the upper surface of the base. And a partition portion formed so as to divide each of the mounting portions by being formed of a double side wall portion and a bottom plate portion in which the lower ends of the respective side walls in the double side wall portion are connected to each other. Characteristic package for storing high frequency circuit elements. 2. The package for accommodating a high-frequency circuit element according to claim 1, wherein a distance d between the bottom plate of the partition and the upper surface of the base is 10 to 100 μm. 3. A groove is formed between the plurality of mounting portions on the upper surface of the base so as to surround the mounting portion, and the bottom plate portion of the partition portion does not contact the inner surface of the groove. 2. The package for accommodating a high-frequency circuit element according to claim 1, wherein the package is inserted into the groove. 4. The distance X between the outer bottom surface of the bottom plate and the upper surface of the base is 10 to 1500 μm, and the distance Y between the side wall of the partition and the inner surface of the groove is 10 to 500 μm.
4. The package for accommodating a high-frequency circuit element according to claim 3, wherein: