JP2004111555A - Package for housing semiconductor device, and semiconductor device - Google Patents

Package for housing semiconductor device, and semiconductor device Download PDF

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Publication number
JP2004111555A
JP2004111555A JP2002270438A JP2002270438A JP2004111555A JP 2004111555 A JP2004111555 A JP 2004111555A JP 2002270438 A JP2002270438 A JP 2002270438A JP 2002270438 A JP2002270438 A JP 2002270438A JP 2004111555 A JP2004111555 A JP 2004111555A
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conductor
center
hole
electrode
diameter
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JP3881606B2 (en
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Yoshiaki Ueda
植田　義明
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To avoid damaging of internal airtightness, to firmly providing a coaxial connector on a substrate, and to be excellent in the transmission characteristic of a high frequency signal by dispensing with forming a through hole at the substrate by mechanical work when providing the coaxial connector on the substrate. <P>SOLUTION: This package is provided with: a center electrode 3a formed at the site of the hole 3 at the lower surface of the substrate 1; an annular electrode 5 surrounding it; and the coaxial connector comprising a cylindrical outer peripheral conductor 7a, a nearly columnar center conductor 4c installed at its center shaft and an insulator 8 interposed between them and where the tip part 4a of a center conductor 4 is inserted and brazed to the site of the hole 3 of the center electrode 3a. As for the center conductor 4, a guard part 4b is formed at the boundary part of the tip part 4a and its remaining part 4c and is brazed to a site surrounding the opening of the hole 3 of the center electrode 3a, and the diameter of the tip part 4a is set to be larger than one time of the diameter of the remaining part 4c but not larger than two times of the same. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、無線基地局、移動体通信の中継局、航空機用通信機等のマイクロ波通信分野、ミリ波通信分野などで用いられ、高い周波数で作動する各種半導体素子を収納する半導体素子収納用パッケージおよび半導体装置に関する。
【０００２】
【従来の技術】
従来、高周波で作動するＩＣ，ＬＳＩ等の半導体素子を収納するための半導体素子収納用パッケージ（以下、半導体パッケージともいう）は、一般に金属製で箱型の基体を有しており、その側部に形成された貫通孔に同軸端子が挿着されるとともにこの同軸端子に同軸コネクタが取着され、さらにこの同軸コネクタに接続される同軸ケーブルを介して外部の電気回路装置に接続される。したがって、このような半導体パッケージの入出力部には、同軸端子と電気的に接続される、高周波信号の伝送損失を小さくするとともに中心導体の周りのインピーダンスが一定となるように筒状の外周導体を有する同軸コネクタが用いられる。この同軸コネクタは、例えば円筒状の外周導体の内側にガラス等から成る絶縁体が充填され、外周導体および絶縁体の中心軸に設置された棒状の中心導体を有する構成である。
【０００３】
そして、従来の半導体パッケージとして、図３，図４に示すように、熱放散性の良好な金属製の基体１１の上面にセラミックスからなる枠体１２が接合され、枠体１２の対向する側部に形成された、断面形状が略円形で内周面に導体層が形成された貫通孔１２ａに、円筒状の同軸コネクタ１３が嵌着されてロウ材を介して接合されるとともに、高周波信号の中継部１６および直流電流供給部１７を備えた構成のものが提案されている（例えば、下記の特許文献１参照）。
【０００４】
なお、図３，図４において、１３ａは同軸コネクタ１３の外周導体、１３ｂは絶縁体、１３ｃは中心導体である。
【０００５】
枠体１２は、セラミックグリーンシートを複数積層した積層体を焼成して形成されており、基体１１の上面に載置部１１ａを囲むように接合される。また、枠体１２の対向する一対の側部にそれぞれ設けられた同軸コネクタ１３と半導体素子１５との間には、配線１６ａを有する中継部１６がそれぞれ設けられており、また枠体１２の他の対向する一対の側部には、半導体素子１５を駆動させる直流電流を供給するための電極１７ａを形成した直流電流供給部１７がそれぞれ設けられている。
【０００６】
中継部１６を設けているのは、中心導体１３ｃが丸棒状であるためワイヤボンディングすることが困難であることと、ワイヤボンディングの際に中心導体１３ｃが下方に曲がり、正常なワイヤボンディングができなくなる場合があるためである。よって、中心導体１３ｃを中継部１６上の配線１６ａの一端部に半田等で接続し、配線１６ａの他端部に半導体素子１５に電気的に接続するためのボンディングワイヤが接続される。
【０００７】
また、直流電流供給部１７は、半導体素子１５を駆動する直流電流を供給するための電極１７ａを備え、半導体素子１４とボンディングワイヤを介して電気的に接続される。
【０００８】
上記の通り枠体１２はセラミックグリーンシートの積層体を焼成して形成されており、従って中継部１６および直流電流供給部１７は枠体１２の形成と同時に形成することができる。従って、セラミック製の枠体１２は、金属製のものに比して、中継部１６となる基板を基体１１の上面に取着する必要がなく、また直流電流供給部１７となる入出力端子を別途作成する必要がないため、製造工程を大幅に低減することができる。そのため、セラミック製の枠体１２は、安定した品質が得られるとともに、セラミックスの比重が鉄（Ｆｅ）−ニッケル（Ｎｉ）−コバルト（Ｃｏ）合金などの金属に比して数分の一程度と小さいため軽量化され、従って半導体パッケージが大幅に軽量化される。
【０００９】
そして、同軸コネクタ１３の外周導体１３ａをロウ材を介して貫通孔１２ａに接合し、中心導体１３ｃの一端部と中継部１６上の配線１６ａの一端部とを半田等を介して接合し、基体１１の載置部１１ａに半導体素子１５を載置し、半導体素子１５と配線１６ａの他端部、半導体素子１５と直流電流供給部１７の電極１７ａを、それぞれボンディングワイヤ等によって電気的に接続し、さらに基体１１の上面にＦｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金などの金属からなる蓋体１８を接合することにより、気密封止された半導体装置となる。
【００１０】
このようにして、枠体１２の側部に同軸コネクタ１３を有し、１０ＧＨｚ程度以上の高周波信号に対応可能な無線基地局用等の半導体パッケージおよび半導体装置が構成される。
【００１１】
【特許文献１】
特開平７−１３５２７２号公報（第４−６頁、第１図）
【００１２】
【発明が解決しようとする課題】
しかしながら、上記従来のセラミック製の枠体１２を用いた半導体パッケージでは、貫通孔１２ａに円筒形の同軸コネクタ１３をロウ付けするに際して、半導体パッケージの気密性が損なわれないように貫通孔１２ａの内周面と外周導体１３ａとの隙間にロウ材を切れ目なくかつ均一に充填させるために、断面が円形の貫通孔１２ａを形成する必要があった。この場合、枠体１２となるセラミックグリーンシートの積層体に断面が円形の貫通孔１２ａをドリルなどの機械的手段により形成し、得られた貫通孔１２ａの内周面にメタライズ層等と導体層となる導体ペーストを塗布して焼成した際に、貫通孔１２ａが歪んで断面が円形とならない場合があり、この場合貫通孔１２ａに同軸コネクタ１３を嵌着することができなくなるという不具合が発生していた。
【００１３】
また、貫通孔１２ａに同軸コネクタ１３を嵌着できたとしても、貫通孔１２ａの内周面と同軸コネクタ１３の外周導体１３ａの外周面との隙間の大きさが不均一になっているため、貫通孔１２ａの内周面と外周導体１３ａの外周面とをロウ付けする際にロウ材の厚さがばらつくことになり、このためロウ材のボリュームが不十分な箇所が発生して、半導体パッケージの気密性が損なわれるという問題点が発生していた。
【００１４】
また、セラミックグリーンシートの積層体を焼成して枠体１２と成した後にドリル等を用いて貫通孔１２ａを形成する場合、例えばアルミナセラミックスなどからなる枠体１２の硬度が極めて大きい（アルミナセラミックスのビッカース硬度は１９００Ｈｖ）ため、貫通孔１２ａの形成に長時間を要してコストが増大し、また、ドリル作業中に貫通孔１２ａの周囲にクラックが発生して半導体パッケージの気密性が損なわれるといった不具合を招来していた。
【００１５】
従って、本発明は上記従来の問題点に鑑み完成されたものであり、その目的は、同軸コネクタを半導体パッケージの基体に設けるに際して基体に機械的加工によって貫通孔を形成する必要がなく、その結果、半導体パッケージ内部の気密性を損なうこと無く、かつ強固に同軸コネクタを基体に設けることが可能となり、従って内部に収容する半導体素子を長期に亘り正常かつ安定に作動させることができる半導体パッケージを提供することにある。
【００１６】
【課題を解決するための手段】
本発明の半導体素子収納用パッケージは、上面の中央部に半導体素子が載置される載置部および該載置部の周囲に形成された電極パッドが設けられたセラミックスから成る基体と、該基体の下面に形成された穴の内面から開口の周囲にかけて形成された導体層から成る、前記電極パッドに貫通導体を介して電気的に接続された中心電極と、該中心電極の周囲に前記穴の中心に対して略同心状に形成された円環状電極と、円筒状の外周導体およびその中心軸に設置された略円柱状の中心導体ならびにそれらの間に介在させた絶縁体から成る、前記中心電極の前記穴の部位に前記中心導体の先端部が挿入されロウ付けされた同軸コネクタと、前記外周導体の外周面を覆って配置されて前記円環状電極に上端がロウ付けされた円筒状の金属部材とを具備しており、前記同軸コネクタの前記中心導体は、前記先端部とその残部との境界部に鍔部が形成されて該鍔部が前記中心電極の前記穴の開口の周囲の部位にロウ付けされているとともに、前記先端部の直径がその残部の直径の１倍を超え２倍以下とされていることを特徴とする。
【００１７】
本発明の半導体素子収納用パッケージは、同軸コネクタの中心導体は、先端部とその残部との境界部に鍔部が形成されてその鍔部が中心電極の穴の開口の周囲の部位にロウ付けされているとともに、先端部の直径がその残部の直径の１倍を超え２倍以下とされていることにより、基体の下面に形成される穴は、セラミックグリーンシートに予め貫通孔を形成しておきセラミックグリーンシートを積層して焼成することによって形成できるため、機械的加工によって形成することが不要となり、高い形状精度でもって形成でき、また中心導体の先端部および鍔部が中心電極に強固に接合されるため、同軸コネクタを精度良く設けることができるとともに同軸コネクタの部位で半導体素子収納用パッケージの気密性がきわめて良好となる。
【００１８】
また、鍔部と金属部材の上端との間隔を調整することにより、同軸コネクタに接続される同軸ケーブルから基体の上面の電極パッドまでの高周波信号の伝送経路において、インピーダンス（例えば５０Ω）の整合を容易に行うことができる。従って、インピーダンスの不整合に起因して発生する高周波信号の反射損失がほとんど解消され、極めて良好な高周波信号の伝送特性が得られる。
【００１９】
本発明の半導体装置は、上記本発明の半導体素子収納用パッケージと、前記載置部に載置固定されるとともに前記同軸コネクタに電気的に接続された半導体素子と、前記基体の上面の外周部に接合された蓋体とを具備したことを特徴とする。
【００２０】
本発明の半導体装置は、上記の構成により、気密性および高周波信号の伝送特性に優れたものとなる。
【００２１】
【発明の実施の形態】
本発明の半導体素子収納用パッケージについて以下に詳細に説明する。図１，図２は、本発明の半導体パッケージについて実施の形態の一例を示す断面図、要部拡大断面図であ。これらの図において、１は基体、１ａは載置部、３は基体１の下面に形成された穴、３ａは中心電極、３ｂは中心電極３ａを成す穴３の開口の周囲の導体層、３ｃは中心電極３ａを成す穴３の内面の導体層、４は中心導体、４ａは中心導体４の先端部、４ｂは中心導体４の鍔部、４ｃは中心導体４の先端部４ａの残部、５は円環状電極、６は円筒状の金属部材、７は同軸ケーブル、７ａは円筒状の外周導体、８は絶縁体、Ａは半導体素子である。
【００２２】
なお、同軸ケーブル７は、外周導体７ａおよび絶縁体８を有するものであり、絶縁体８の中心軸の部位に形成した貫通孔に中心導体４を挿入させるとともにその貫通孔に予め設置してある他の中心導体に中心導体４を嵌合等によって電気的に接続し、外周導体７ａおよび絶縁体８を円筒状の金属部材６の内側に設けることによって、中心導体４、絶縁体８および外周導体７ａから成る同軸コネクタが構成されるようになっている。また、中心導体４、絶縁体８、外周導体７ａおよび金属部材６から成る同軸コネクタを用いて、中心導体４を中心電極３ａに、金属部材６を円環状電極５にそれぞれ接合してもよい。
【００２３】
本発明の半導体パッケージは、上面の中央部に半導体素子Ａが載置される載置部１ａおよび載置部１ａの周囲に形成された電極パッド１ｂが設けられたセラミックスから成る基体１と、基体１の下面に形成された穴３の内面から開口の周囲にかけて形成された導体層３ｂ，３ｃから成る、電極パッド１ｂに貫通導体１ｃを介して電気的に接続された中心電極３ａと、中心電極３ａの周囲に穴３の中心に対して略同心状に形成された円環状電極５と、円筒状の外周導体７ａおよびその中心軸に設置された略円柱状の中心導体４ｃならびにそれらの間に介在させた絶縁体８から成る、中心電極３ａの穴３の部位に中心導体４の先端部４ａが挿入されロウ付けされた同軸コネクタと、外周導体７ａの外周面を覆って配置されて円環状電極５に上端がロウ付けされた円筒状の金属部材６とを具備し、同軸コネクタの中心導体４は、先端部４ａとその残部４ｃとの境界部に鍔部４ｂが形成されてその鍔部４ｂが中心電極３ａの穴３の開口の周囲の部位にロウ付けされているとともに、先端部４ａの直径がその残部４ｃの直径の１倍を超え２倍以下とされている。
【００２４】
本発明の同軸コネクタの中心導体４および鍔部４ｂは、中心電極３ａに厚さ０．０５〜０．５ｍｍ程度のロウ材を介して接合されており、中心導体４は基体１の下面に垂設されているとともに円環状電極５の中心に位置している。その結果、中心導体４は円筒状の金属部材６の中心軸に位置し、図１に示すように同軸ケーブル７が取着された場合、この同軸ケーブルは絶縁体８を介して中心導体４と金属部材６との間に発生するキャパシタンスにより高周波信号に対して容量リアクタンスをもつ。そして、この容量リアクタンスは、本発明の同軸コネクタによって安定したものとなる。
【００２５】
すなわち、基体１の下面に形成される穴３は、セラミックグリーンシートに予め貫通孔を形成しておきセラミックグリーンシートを積層して焼成することによって形成できるため、機械的加工によって形成することが不要となり、高い形状精度でもって形成でき、また中心導体４の太い先端部４ａおよび鍔部４ｂが中心電極３ａに強固に接合されるため、同軸コネクタを精度良く設けることができる。従って、中心導体４は基体１の下面に位置精度よくかつ強固に垂設される。また、中心導体４と金属部材６との間、鍔部４ｂと金属部材６の上端との間、中心電極３ａと円筒状の金属部材６との間において、インピーダンスを整合させることができる。特に、鍔部４ｂと金属部材６の上端との間では空間を介してキャパシタンスが発生することになり、鍔部４ｂと金属部材６の上端との間の間隔を調整することによりインピーダンスを精度良く整合させることができる。具体的には、上記間隔の部位で小さなキャパシタンス（電気的な容量）が発生するため、上記隙間を小さくすることにより金属部材６の上端の接合面積を大きくして接合強度を大きくできるとともに、上記隙間を調整することでインピーダンスを高精度に制御することができる。
【００２６】
また、中心導体４の先端部４ａの直径を残部４ｃの直径の１倍を超え２倍以下としていることから、中心導体４の接合強度を大きくすることができるとともに、先端部４ａと基体１内に形成されている内層接地導体等（図示せず）や内部配線等（図示せず）との間で発生するキャパシタンスを小さなものすることができる。
【００２７】
即ち、中心導体４の先端部４ａの直径が残部４ｃの直径の１倍以下の場合、中心導体４の接合強度が小さくなり、中心導体４の先端部４ａの直径が残部４ｃの直径の２倍を超えると、先端部４ａと基体１内部の内層接地導体等や内部配線等との間の間隔が小さくなり、先端部４ａと内層接地導体等や内部配線等との間で発生するキャパシタンスが大きくなり易く、その結果、インピーダンスの不整合が発生し易くなる。より好ましくは、先端部４ａの直径は残部４ｃの直径の１．２〜２倍がよい。
【００２８】
本発明の基体１は、アルミナ（Ａｌ２Ｏ３）質焼結体（アルミナセラミックス）等からなり、厚さは好ましくは１〜３ｍｍ程度で上面に半導体素子５が載置される載置部１ａを有する。基体１がＡｌ２Ｏ３質焼結体からなる場合、２０Ｗ／ｍ・Ｋ程度の熱伝導率を有し、半導体素子Ａが作動時に発する熱を比較的効率良く基体１の外部に放散し得る。基体１の厚さが１ｍｍ未満の場合、中心導体４を接合するための穴３と貫通導体１ｃと電極パッド１ｂを基体１に形成すると、基体１の強度が劣化し易くなる。また、基体１の厚さが３ｍｍを超えると、半導体パッケージが重くなり、軽量化の要求を満足させることができなくなってしまう。
【００２９】
基体１はセラミックグリーンシートの積層体を焼結して作製されるが、例えばＡｌ２Ｏ３セラミックスからなる場合、以下のようにして作製される。まずＡｌ２Ｏ３の粉末と、焼結助材としての二酸化珪素（ＳｉＯ２）、酸化カルシウム（ＣａＯ）、酸化マグネシウム（ＭｇＯ）などの粉末と、適当なバインダーおよび溶剤とを混合してスラリーとなし、このスラリーを用いて従来周知のドクターブレード法などのテープ成形法によって所定厚さのセラミックグリーンシートを形成する。
【００３０】
次に、平面視形状が略四角形の基体１となる略四角形のセラミックグリーンシートを複数枚準備し、これらのうち穴３が形成される複数枚のセラミックグリーンシートに、穴３となる円形の貫通孔と直流電流の供給部となる貫通孔とを併せて計３ヶ所に形成する。次に、穴３となる貫通孔の内面および開口の周囲、さらに直流電流の供給部となる貫通孔の内面に、タングステン（Ｗ）を主成分とする金属ペーストを垂れ込ませるようにして印刷塗布するとともに、半導体素子Ａの載置用の導体層となる印刷層および電極パッド１ｂとなる印刷層を形成し、しかる後、これらを積層圧着する。得られたセラミックグリーンシートの積層体を１５００〜１６００℃程度の高温で焼成することにより、穴３、電極パッド１ｂ、直流電流供給部および半導体素子Ａの載置用の導体層を有する焼結体が作製される。
【００３１】
次に、穴３の開口の周囲の導体層３ｂおよび内面の導体層３ｃ、電極パッド１ｂ、直流電流供給部、半導体素子Ａの載置用の導体層に、Ｎｉメッキ層を０．５〜９μｍの厚さでそれぞれ被着し、次に穴３に予めＮｉメッキ層が０．５〜９μｍの厚さで被着された中心導体４の鍔部４および先端部４ａがＡｇ−Ｃｕ合金等のロウ材で接合される。さらに、中心導体４およびロウ材の表面にＮｉメッキ層を０．５〜９μｍの厚さで被着し、次いでＡｕメッキ層を０．５〜５μｍの厚さで被着して、基体１が作製される。
【００３２】
本発明において、中心導体４の先端部４ａと穴３の内面の導体層３ｃとの隙間（ロウ材の厚さ）は０．０５〜０．５ｍｍであることが好ましい。これにより、先端部４ａの接合強度を充分なものとすることができ、従来実施していた同軸コネクタ部の気密性を試験するためのヘリウムリーク試験等を実施する必要がなくなり、よって生産性を向上させることができる。上記隙間が０．０５ｍｍ未満では、インピーダンスの整合を行うことが困難となり、反射損失を発生させてしまう。また、０．５ｍｍを超えると、穴３の内面による中心導体４の保持力が小さくなり中心導体４の接合強度を劣化させてしまう。
【００３３】
中心導体４の鍔部４ｂを接合するロウ材は、具体的には、Ａｇの含有量が７１〜７３ｗｔ（重量）％でＣｕの含有量が２７〜２９ｗｔ％であるＡｇ−Ｃｕ合金ロウ（ＢＡｇ−８：ＪＩＳ　Ｚ　３２６１）等が用いられ、７７０〜８７０℃の温度でロウ付けが行われる。ロウ材の厚さは２〜２０μｍが好ましい。２μｍ未満では、ロウ材内に隙間や空間が生じて部分的に接合されない箇所が生じ、接合強度が低下し易くなり、さらには気密性が損なわれ易くなる。２０μｍを超えると、ロウ材中に生じたボイドが外部に排出されないで残り易くなり、また、ロウ材内部に熱応力が発生するとボイドを起点としてクラックが発生し易くなる。
【００３４】
上記のＡｇ−Ｃｕ合金ロウは、ロウ材の中では硬度が低い方であるが、それでもヤング率が９１ＧＰａと比較的大きいため、厚さが上記の範囲内にあれば接合された中心導体４に外力が加わってもその中心軸がぶれるようなことはない。
【００３５】
開口の周囲に導体層３ｂを有するとともに内面に導体層３ｃを有する穴３は、それに挿入接合された中心導体４をロウ材により強固に接合し安定させるとともに、穴３が貫通していないことから半導体パッケージ内部の気密性を損なうことはない。中心導体４の先端部４ａの外周面と穴３の内面の導体層３ｃとの間の隙間は、０．０５〜０．５ｍｍの厚さのロウ材を介して強固に接続されている。これにより、中心導体４の水平方向のずれや傾きなどの不具合は発生せず、その結果、例えば別体の同軸ケーブル７の先端に設けられている絶縁体８および外周導体７ａを中心導体４に対して正確に設置させることができ、高周波信号の伝送特性を良好に保持することができる。
【００３６】
図１に示すように、同軸ケーブル７の金属部材６への接続は嵌め込みによって行われる。このとき、同軸ケーブル７の先端部に設けられたソケット（図示せず）が金属部材６の内側に挿入され、同軸ケーブルの他の中心導体が中心導体４に嵌合され、一体となって中心導体を構成するようになっている。このように、同軸コネクタの中心導体は、同軸ケーブルの他の中心導体の先端に凹部や割れ等から成る嵌合部を設け、その嵌合部を中心導体４の外側の端部に嵌合させて一体となしたものとしてもよい。この場合、同軸ケーブルの他の中心導体の嵌合部は、好ましくは大径化された円筒状とされているのがよく、良好な嵌合が行われる。
【００３７】
本発明の金属部材６は、Ｆｅ−Ｎｉ−Ｃｏ合金，Ｆｅ−Ｎｉ合金などの鉄系合金から成るのがよく、これらはアルミナセラミックス等のセラミックスから成る基体１に熱膨張係数が近いため、金属部材４を基体１にロウ付けした際に基体１にクラック等が発生しにくいという利点がある。
【００３８】
また、同軸コネクタの外周導体７ａは、Ｆｅ−Ｎｉ−Ｃｏ合金，Ｆｅ−Ｎｉ合金などのＦｅ系合金等の金属から成るのがよいが、金属部材６と同程度の熱膨張係数の金属、または金属部材６の熱膨張係数よりも小さい金属から成ることが好ましい。金属部材６と同程度の熱膨張係数の金属の場合、外周導体３ａと金属部材６とのロウ付け時にそれらの間に歪みが発生しにくいものとなる。また、外周導体７ａが金属部材６の熱膨張係数よりも小さい金属から成る場合、同軸コネクタを金属部材６に挿入し補強のために外周導体３ａを金属部材６にロウ付けした際に、それらの熱膨張係数差によって同軸コネクタに圧縮応力が作用することになり、ガラス等の絶縁体８が破損するのを防ぐことができる。具体的には、外周導体７ａが金属部材６の熱膨張係数よりも小さい場合、１×１０−６〜３×１０−６／℃程度小さいと上記の効果が得られる。
【００３９】
そして、本発明の半導体パッケージは、中心導体４の鍔部４ｂを穴３の開口の周囲の導体層３ｂにロウ付けするとともに先端部４ａを穴３の内面の導体層３ｃにロウ付けし、金属部材６の上端を円環状電極５にロウ付けした後、載置部１ａに半導体素子５を半田や樹脂接着剤等を介して載置固定し、半導体素子５をボンディングワイヤ等を介して基体１上面の電極パッド１ｂに電気的に接続することにより半導体素子Ａと中心導体４とを電気的に接続し、最後に基体１の上面の外周部にキャップ状の蓋体（図示せず）を接合することにより、半導体装置となる。本発明の半導体装置は、本発明の半導体パッケージを用いることにより、高周波信号で作動する半導体素子５を気密性良くかつ高周波信号の伝送特性を良好として収納したものとなる。
【００４０】
【実施例】
本発明の半導体素子収納用パッケージの実施例を以下に説明する。
【００４１】
まず、図１，図２に示した本発明の半導体パッケージを以下のようにして作製した。縦約３０ｍｍ×横約４０ｍｍ×厚さ約２ｍｍのアルミナセラミックスからなる略四角形の基体１を作製した。このとき、基体１の下面に、焼成後の直径が０．８，０．９，１，１．１，１．３，１．５，１．７，１．８，１．９，２，２．１（ｍｍ）、深さが０．０３，０．２，０．３，０．４，０．５，０．６，０．７（ｍｍ）の種々の穴３が形成されるように、基体１となるセラミックグリーンシートの一部に貫通孔を形成し、セラミックグリーンシートの積層体を作製した。
【００４２】
そして、穴３の内面および開口の周囲に、厚さ約２０μｍのＷからなる金属ペーストを塗布して導体層３ｂ，３ｃとなる金属ペースト層を形成した。導体層３ｂとなる金属ペースト層は、幅が０．５ｍｍのリング状に形成した。深さ０．０３〜０．７ｍｍの穴を形成するには、これらの厚さの各種セラミックグリーンシートをそれぞれ作製し、これらのセラミックグリーンシートから１種を選択することにより行なった。そして、セラミックグリーンシートの積層体を約１６００℃で焼成することにより、上記７７種類のサイズの穴３を有する基体１をそれぞれ作製した。次に、基体１の穴３の導体層３ｂ，３ｃにＮｉメッキ層およびＡｕメッキ層を順次被着して、基体１の各種サンプルを７７種類の各５個ずつで合計３８５個作製した。
【００４３】
次に、先端部４ａの直径が残部４ｃの直径（０．５ｍｍ）の０．９倍（０．４５ｍｍ），１倍（０．５ｍｍ），１．１倍（０．５５ｍｍ），１．２倍（０．６ｍｍ），１．４倍（０．７ｍｍ），１．６倍（０．８ｍｍ），１．８倍（０．９ｍｍ），１．９倍（０．９５ｍｍ），２倍（１ｍｍ），２．１倍（１．０５ｍｍ），２．２倍（１．１ｍｍ）とされた各種中心導体４を用意し、上記各種サンプルの各穴３の導体層３ｂ，３ｃから成る中心電極３ａに、Ａｇ−Ｃｕ合金ロウ（ＢＡｇ−８）を介して挿入接合して、接合強度を評価した。
【００４４】
なお、直径０．８ｍｍの穴３に直径０．４５ｍｍの先端部４ａ、直径０．９ｍｍの穴３に直径０．５ｍｍの先端部４ａ、直径１ｍｍの穴３に直径０．５５ｍｍの先端部４ａ、直径１．１ｍｍの穴３に直径０．６ｍｍの先端部４ａ、直径１．３ｍｍの穴３に直径０．７ｍｍの先端部４ａ、直径１．５ｍｍの穴３に直径０．８ｍｍの先端部４ａ、直径１．７ｍｍの穴３に直径０．９ｍｍの先端部４ａ、直径１．８ｍｍの穴３に直径０．９５ｍｍの先端部４ａ、直径１．９ｍｍの穴３に直径１ｍｍの先端部４ａ、直径２ｍｍの穴３に直径１．０５ｍｍの先端部４ａ、直径２．１ｍｍの穴３に直径１．１ｍｍの先端部４ａをそれぞれ挿入し接合した。
【００４５】
また、接合強度の測定は、中心導体４の残部４ｃの外側の端部に金属製の輪を半田付けし、この輪にフックを引っかけて下方に引っ張り、中心導体４が外れたときの接合強度を測定することによって行なった。その結果を表１に示す。なお、表１において、Ｄは穴３の深さ、Ｒは先端部４ａの直径、Ｒの欄の括弧内の数字は先端部４ａの直径の残部４ｃの直径に対する比（倍）を示す。
【００４６】
【表１】

Figure 2004111555
【００４７】
表１より、接合強度の点で、同軸コネクタの中心導体４の先端部４ａの直径Ｒは、残部４ｃの直径の１倍を超えるようにする必要があることが判明した。また、先端部４ａの直径Ｒが残部４ｃの直径の２倍を超えると接合強度は大きくなるが、先端部４ａの直径Ｒが残部４ｃの直径の２倍以下のものと比較して１０〜２０％程度浮遊容量が大きくなり、インピーダンスが変動してその不整合を招いてしまうことが判明した。従って、中心導体４の先端部４ａの直径Ｒは、残部４ｃの直径の１倍を超え２倍以下とする必要があることが判明した。
【００４８】
なお、本発明は上記実施の形態および実施例に限定されず、本発明の要旨を逸脱しない範囲内で種々の変更を施すことは可能である。
【００４９】
【発明の効果】
本発明の半導体素子収納用パッケージは、上面の中央部に半導体素子が載置される載置部および載置部の周囲に形成された電極パッドが設けられたセラミックスから成る基体と、基体の下面に形成された穴の内面から開口の周囲にかけて形成された導体層から成る、電極パッドに貫通導体を介して電気的に接続された中心電極と、中心電極の周囲に穴の中心に対して略同心状に形成された円環状電極と、円筒状の外周導体およびその中心軸に設置された略円柱状の中心導体ならびにそれらの間に介在させた絶縁体から成る、中心電極の穴の部位に中心導体の先端部が挿入されロウ付けされた同軸コネクタと、外周導体の外周面を覆って配置されて円環状電極に上端がロウ付けされた円筒状の金属部材とを具備し、同軸コネクタの中心導体は、先端部とその残部との境界部に鍔部が形成されてその鍔部が中心電極の穴の開口の周囲の部位にロウ付けされているとともに、先端部の直径がその残部の直径の１倍を超え２倍以下とされていることにより、基体の下面に形成される穴は、セラミックグリーンシートに予め貫通孔を形成しておきセラミックグリーンシートを積層して焼成することによって形成できるため、機械的加工によって形成することが不要となり、高い形状精度でもって形成でき、また中心導体の先端部および鍔部が中心電極に強固に接合されるため、同軸コネクタを精度良く設けることができるとともに同軸コネクタの部位で半導体素子収納用パッケージの気密性がきわめて良好となる。
【００５０】
また、鍔部と金属部材の上端との間隔を調整することにより、同軸コネクタに接続される同軸ケーブルから基体の上面の電極パッドまでの高周波信号の伝送経路において、インピーダンスの整合を容易かつ高精度に行うことができる。従って、インピーダンスの不整合に起因して発生する高周波信号の反射損失がほとんど解消され、極めて良好な高周波信号の伝送特性が得られる。
【００５１】
本発明の半導体装置は、上記本発明の半導体素子収納用パッケージと、載置部に載置固定されるとともに同軸コネクタに電気的に接続された半導体素子と、基体の上面の外周部に接合された蓋体とを具備したことにより、気密性および高周波信号の伝送特性に優れたものとなる。
【図面の簡単な説明】
【図１】本発明の半導体素子収納用パッケージについて実施の形態の例を示す断面図である。
【図２】図１の半導体素子収納用パッケージの要部拡大断面図である。
【図３】従来の半導体素子収納用パッケージの断面図である。
【図４】図４の半導体素子収納用パッケージの同軸コネクタ部の拡大断面図である。
【符号の説明】
１：基体
１ａ：載置部
１ｂ：電極パッド
１ｃ：貫通導体
３：穴
３ａ：中心電極
３ｂ，３ｃ：導体層
４：中心導体
４ａ：先端部
４ｂ：鍔部
４ｃ：残部
５：円環状電極
６：金属部材
７ａ：外周導体
８：絶縁体
Ａ：半導体素子[0001]
TECHNICAL FIELD OF THE INVENTION
INDUSTRIAL APPLICABILITY The present invention is used in the field of microwave communication such as a radio base station, a relay station for mobile communication, an aircraft communication device, the field of millimeter wave communication, etc., and is used for housing various semiconductor elements operating at a high frequency. The present invention relates to a package and a semiconductor device.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, a semiconductor device housing package (hereinafter, also referred to as a semiconductor package) for housing a semiconductor device such as an IC or an LSI operating at a high frequency generally has a box-shaped base made of metal, and has a side portion. A coaxial terminal is inserted into a through hole formed in the coaxial connector, a coaxial connector is attached to the coaxial terminal, and further connected to an external electric circuit device via a coaxial cable connected to the coaxial connector. Therefore, the input / output portion of such a semiconductor package has a cylindrical outer conductor electrically connected to the coaxial terminal so as to reduce the transmission loss of the high-frequency signal and to keep the impedance around the center conductor constant. Is used. This coaxial connector has a configuration in which, for example, an insulator made of glass or the like is filled inside a cylindrical outer conductor, and the outer conductor and a rod-shaped center conductor provided on the center axis of the insulator are provided.
[0003]
As shown in FIGS. 3 and 4, a frame 12 made of ceramics is joined to the upper surface of a metal base 11 having good heat dissipation as shown in FIGS. A cylindrical coaxial connector 13 is fitted into a through-hole 12a having a substantially circular cross-sectional shape and having a conductor layer formed on the inner peripheral surface, and is joined via a brazing material. A configuration having a relay unit 16 and a DC current supply unit 17 has been proposed (for example, see Patent Document 1 below).
[0004]
3 and 4, reference numeral 13a denotes an outer conductor of the coaxial connector 13, 13b denotes an insulator, and 13c denotes a center conductor.
[0005]
The frame body 12 is formed by firing a laminate in which a plurality of ceramic green sheets are laminated, and is joined to the upper surface of the base body 11 so as to surround the mounting portion 11a. Further, between the coaxial connector 13 and the semiconductor element 15 provided on a pair of opposed sides of the frame 12, there are provided relay portions 16 having wirings 16 a, respectively. On a pair of opposed side portions of the semiconductor device, a DC current supply portion 17 having an electrode 17a for supplying a DC current for driving the semiconductor element 15 is provided.
[0006]
The reason why the relay portion 16 is provided is that it is difficult to perform wire bonding because the center conductor 13c has a round bar shape, and the center conductor 13c bends downward during wire bonding, and normal wire bonding cannot be performed. This is because there are cases. Therefore, the center conductor 13c is connected to one end of the wiring 16a on the relay section 16 with solder or the like, and a bonding wire for electrically connecting to the semiconductor element 15 is connected to the other end of the wiring 16a.
[0007]
The DC current supply unit 17 includes an electrode 17a for supplying a DC current for driving the semiconductor element 15, and is electrically connected to the semiconductor element 14 via a bonding wire.
[0008]
As described above, the frame 12 is formed by firing a laminate of ceramic green sheets. Therefore, the relay section 16 and the DC current supply section 17 can be formed simultaneously with the formation of the frame 12. Therefore, the ceramic frame 12 does not need to attach the substrate serving as the relay section 16 to the upper surface of the base 11 as compared with the metal frame body, and has the input / output terminals serving as the DC current supply section 17. Since there is no need to separately create the device, the number of manufacturing steps can be significantly reduced. Therefore, the ceramic frame 12 can provide stable quality and the specific gravity of the ceramic is about several times smaller than that of a metal such as an iron (Fe) -nickel (Ni) -cobalt (Co) alloy. The small size reduces the weight, and thus the semiconductor package is significantly reduced.
[0009]
The outer conductor 13a of the coaxial connector 13 is joined to the through hole 12a via a brazing material, and one end of the center conductor 13c and one end of the wiring 16a on the relay section 16 are joined via solder or the like. The semiconductor element 15 is mounted on the mounting part 11a of the semiconductor device 11, and the semiconductor element 15 and the other end of the wiring 16a, and the semiconductor element 15 and the electrode 17a of the DC current supply part 17 are electrically connected to each other by a bonding wire or the like. Furthermore, by joining a lid 18 made of a metal such as an Fe-Ni-Co alloy or an Fe-Ni alloy to the upper surface of the base 11, a hermetically sealed semiconductor device is obtained.
[0010]
In this manner, a semiconductor package and a semiconductor device for a wireless base station, etc., having the coaxial connector 13 on the side of the frame body 12 and capable of supporting a high-frequency signal of about 10 GHz or more, are configured.
[0011]
[Patent Document 1]
JP-A-7-135272 (page 4-6, FIG. 1)
[0012]
[Problems to be solved by the invention]
However, in the above-described semiconductor package using the ceramic frame 12, when the cylindrical coaxial connector 13 is brazed to the through-hole 12a, the inside of the through-hole 12a is not damaged so that the airtightness of the semiconductor package is not impaired. In order to uniformly and uniformly fill the gap between the peripheral surface and the outer conductor 13a with the brazing material, it is necessary to form the through hole 12a having a circular cross section. In this case, a through-hole 12a having a circular cross section is formed by mechanical means such as a drill in the laminated body of ceramic green sheets to be the frame 12, and a metallized layer or the like and a conductor layer are formed on the inner peripheral surface of the obtained through-hole 12a. When the conductive paste is applied and baked, the through-hole 12a may be distorted and the cross section may not be circular. In this case, a problem that the coaxial connector 13 cannot be fitted into the through-hole 12a occurs. I was
[0013]
Even if the coaxial connector 13 can be fitted into the through hole 12a, the size of the gap between the inner peripheral surface of the through hole 12a and the outer peripheral surface of the outer conductor 13a of the coaxial connector 13 is not uniform. When the inner peripheral surface of the through hole 12a and the outer peripheral surface of the outer conductor 13a are brazed, the thickness of the brazing material varies, so that a location where the volume of the brazing material is insufficient occurs, and However, there has been a problem that the airtightness is impaired.
[0014]
When the through-holes 12a are formed by using a drill or the like after the ceramic green sheet laminate is fired to form the frame 12, the hardness of the frame 12 made of, for example, alumina ceramic is extremely large (alumina ceramics). Since the Vickers hardness is 1900 Hv), it takes a long time to form the through-hole 12a, and the cost increases. In addition, cracks occur around the through-hole 12a during drilling, and the airtightness of the semiconductor package is impaired. It was causing trouble.
[0015]
Accordingly, the present invention has been completed in view of the above-mentioned conventional problems, and an object of the present invention is to provide a coaxial connector on a substrate of a semiconductor package without having to form a through-hole by mechanical processing on the substrate, as a result. Provided is a semiconductor package in which a coaxial connector can be firmly provided on a base without impairing the airtightness of the inside of the semiconductor package, so that the semiconductor element housed therein can be operated normally and stably for a long period of time. Is to do.
[0016]
[Means for Solving the Problems]
A semiconductor device housing package according to the present invention includes a base made of ceramics provided with a mounting portion on which a semiconductor element is mounted on a center portion of an upper surface and an electrode pad formed around the mounting portion; A central electrode electrically connected to the electrode pad via a through conductor, comprising a conductor layer formed from the inner surface of the hole formed on the lower surface of the hole to the periphery of the opening; An annular electrode formed substantially concentrically with the center, a cylindrical outer conductor, a substantially cylindrical center conductor installed on the center axis thereof, and an insulator interposed therebetween; A coaxial connector in which the tip of the center conductor is inserted and brazed at the hole portion of the electrode, and a cylindrical connector which is disposed so as to cover the outer peripheral surface of the outer conductor and has an upper end brazed to the annular electrode. Metal parts The central conductor of the coaxial connector has a flange formed at a boundary between the tip and the remaining portion, and the flange is brazed to a portion around the opening of the hole of the center electrode. And the diameter of the tip portion is set to be more than one time and not more than twice the diameter of the remaining portion.
[0017]
In the package for accommodating a semiconductor element of the present invention, the center conductor of the coaxial connector has a flange formed at the boundary between the tip and the remaining portion, and the flange is brazed to a portion around the opening of the hole of the center electrode. In addition, since the diameter of the tip portion is set to be more than 1 times and not more than 2 times the diameter of the remaining portion, the hole formed in the lower surface of the base is formed by forming a through hole in the ceramic green sheet in advance. Since it can be formed by laminating and firing ceramic green sheets, it is not necessary to form it by mechanical processing, it can be formed with high shape accuracy, and the tip and flange of the center conductor are firmly attached to the center electrode. Since the coaxial connector is joined, the coaxial connector can be provided with high accuracy, and the airtightness of the semiconductor element housing package becomes extremely good at the coaxial connector.
[0018]
In addition, by adjusting the distance between the flange and the upper end of the metal member, impedance (for example, 50Ω) matching can be achieved in a high-frequency signal transmission path from the coaxial cable connected to the coaxial connector to the electrode pad on the upper surface of the base. It can be done easily. Therefore, the reflection loss of the high-frequency signal generated due to the impedance mismatch is almost eliminated, and an extremely good high-frequency signal transmission characteristic can be obtained.
[0019]
The semiconductor device according to the present invention includes a package for accommodating the semiconductor element according to the present invention, a semiconductor element mounted and fixed to the mounting portion and electrically connected to the coaxial connector, and an outer peripheral portion on an upper surface of the base. And a lid joined to the lid.
[0020]
The semiconductor device of the present invention has excellent airtightness and high-frequency signal transmission characteristics due to the above configuration.
[0021]
BEST MODE FOR CARRYING OUT THE INVENTION
The package for housing a semiconductor element of the present invention will be described in detail below. 1 and 2 are a cross-sectional view and an enlarged cross-sectional view of a main part showing an example of an embodiment of a semiconductor package of the present invention. In these figures, 1 is a base, 1a is a mounting portion, 3 is a hole formed in the lower surface of the base 1, 3a is a center electrode, 3b is a conductor layer around the opening of the hole 3 forming the center electrode 3a, 3c Is a conductor layer on the inner surface of the hole 3 forming the center electrode 3a, 4 is a center conductor, 4a is a tip of the center conductor 4, 4b is a flange of the center conductor 4, 4c is a remaining portion of the tip 4a of the center conductor 4, 5 Is an annular electrode, 6 is a cylindrical metal member, 7 is a coaxial cable, 7a is a cylindrical outer conductor, 8 is an insulator, and A is a semiconductor element.
[0022]
The coaxial cable 7 has an outer conductor 7 a and an insulator 8. The center conductor 4 is inserted into a through hole formed at the center axis of the insulator 8 and is installed in the through hole in advance. By electrically connecting the center conductor 4 to another center conductor by fitting or the like and providing the outer conductor 7a and the insulator 8 inside the cylindrical metal member 6, the center conductor 4, the insulator 8 and the outer conductor are provided. 7a is constituted. Alternatively, the center conductor 4 may be joined to the center electrode 3a and the metal member 6 may be joined to the annular electrode 5 using a coaxial connector including the center conductor 4, the insulator 8, the outer conductor 7a, and the metal member 6.
[0023]
The semiconductor package of the present invention includes a base 1 made of ceramics provided with a mounting portion 1a on which a semiconductor element A is mounted at the center of the upper surface and an electrode pad 1b formed around the mounting portion 1a. A center electrode 3a, which is composed of conductor layers 3b and 3c formed from the inner surface of the hole 3 formed on the lower surface of the hole 1 to the periphery of the opening, and which is electrically connected to the electrode pad 1b via the through conductor 1c; An annular electrode 5 formed substantially concentrically with respect to the center of the hole 3 around the periphery 3a, a cylindrical outer conductor 7a and a substantially cylindrical center conductor 4c provided on the center axis thereof, and between them. A coaxial connector in which the distal end 4a of the center conductor 4 is inserted and brazed at the hole 3 of the center electrode 3a made of an insulator 8 interposed therebetween, and an annular shape which is arranged so as to cover the outer peripheral surface of the outer conductor 7a. The upper end of the electrode 5 The central conductor 4 of the coaxial connector has a flange 4b formed at the boundary between the tip 4a and the remaining portion 4c, and the flange 4b serves as the center electrode 3a. And the diameter of the tip portion 4a is set to be more than one time and not more than twice the diameter of the remaining portion 4c.
[0024]
The center conductor 4 and the flange portion 4b of the coaxial connector of the present invention are joined to the center electrode 3a via a brazing material having a thickness of about 0.05 to 0.5 mm. And located at the center of the annular electrode 5. As a result, the center conductor 4 is located on the center axis of the cylindrical metal member 6. When the coaxial cable 7 is attached as shown in FIG. It has a capacitance reactance with respect to a high frequency signal due to a capacitance generated between the metal member 6 and the metal member 6. This capacitive reactance is stabilized by the coaxial connector of the present invention.
[0025]
That is, since the holes 3 formed on the lower surface of the base 1 can be formed by forming through holes in the ceramic green sheet in advance and laminating and firing the ceramic green sheets, it is unnecessary to form the holes 3 by mechanical processing. Thus, the coaxial connector can be formed with high precision because the thick end portion 4a and the flange portion 4b of the center conductor 4 are firmly joined to the center electrode 3a. Therefore, the center conductor 4 is firmly provided on the lower surface of the base 1 with good positional accuracy and strong. Further, impedance can be matched between the center conductor 4 and the metal member 6, between the flange portion 4b and the upper end of the metal member 6, and between the center electrode 3a and the cylindrical metal member 6. In particular, capacitance occurs between the flange 4b and the upper end of the metal member 6 via a space, and the impedance is accurately adjusted by adjusting the distance between the flange 4b and the upper end of the metal member 6. Can be matched. Specifically, since a small capacitance (electrical capacity) is generated at the above-described space, the bonding area can be increased by increasing the bonding area at the upper end of the metal member 6 by reducing the gap, and the bonding strength can be increased. The impedance can be controlled with high precision by adjusting the gap.
[0026]
In addition, since the diameter of the tip 4a of the center conductor 4 is set to be more than one time and not more than twice the diameter of the remaining part 4c, the joining strength of the center conductor 4 can be increased, and the tip 4a and the base 1 The capacitance generated between the inner layer ground conductor and the like (not shown) and the internal wiring and the like (not shown) can be reduced.
[0027]
That is, when the diameter of the tip portion 4a of the center conductor 4 is less than or equal to one time the diameter of the remaining portion 4c, the bonding strength of the center conductor 4 decreases, and the diameter of the tip portion 4a of the center conductor 4 becomes twice the diameter of the remaining portion 4c. Is exceeded, the distance between the tip 4a and the inner layer ground conductor or the like or the internal wiring inside the base 1 becomes smaller, and the capacitance generated between the tip 4a and the inner layer ground conductor or the like or the inner wiring becomes large. As a result, impedance mismatch tends to occur. More preferably, the diameter of the tip portion 4a is preferably 1.2 to 2 times the diameter of the remaining portion 4c.
[0028]
The substrate 1 of the present invention is made of alumina (Al) 2 O 3 ) It is made of a sintered material (alumina ceramics) or the like, preferably has a thickness of about 1 to 3 mm, and has a mounting portion 1a on which the semiconductor element 5 is mounted. Substrate 1 is made of Al 2 O 3 When the semiconductor element A is made of a high-quality sintered body, it has a thermal conductivity of about 20 W / m · K, and can radiate heat generated during operation of the semiconductor element A to the outside of the base 1 relatively efficiently. When the thickness of the base 1 is less than 1 mm, the strength of the base 1 is liable to be deteriorated if the hole 3 for joining the center conductor 4, the through conductor 1c, and the electrode pad 1b are formed in the base 1. On the other hand, if the thickness of the base 1 exceeds 3 mm, the semiconductor package becomes heavy, making it impossible to satisfy the demand for weight reduction.
[0029]
The substrate 1 is manufactured by sintering a laminate of ceramic green sheets. 2 O 3 When made of ceramics, it is manufactured as follows. First, Al 2 O 3 Powder and silicon dioxide (SiO 2) 2 ), Calcium oxide (CaO), magnesium oxide (MgO), etc., and an appropriate binder and solvent to form a slurry. The slurry is used to form a slurry by a well-known tape forming method such as a doctor blade method. A ceramic green sheet having a thickness is formed.
[0030]
Next, a plurality of substantially square ceramic green sheets serving as the base 1 having a substantially square shape in plan view are prepared. The holes and the through holes serving as a DC current supply part are formed in a total of three places. Next, a metal paste containing tungsten (W) as a main component is applied by printing onto the inner surface of the through hole serving as the hole 3 and the periphery of the opening, and further into the inner surface of the through hole serving as a DC current supply unit. At the same time, a printed layer to be a conductor layer for mounting the semiconductor element A and a printed layer to be the electrode pads 1b are formed, and then these are laminated and pressed. By firing the obtained ceramic green sheet laminate at a high temperature of about 1500 to 1600 ° C., a sintered body having the hole 3, the electrode pad 1 b, the DC current supply unit, and the conductor layer for mounting the semiconductor element A is provided. Is produced.
[0031]
Next, a Ni plating layer having a thickness of 0.5 to 9 μm was formed on the conductor layer 3b around the opening of the hole 3, the conductor layer 3c on the inner surface, the electrode pad 1b, the DC current supply unit, and the conductor layer for mounting the semiconductor element A. The flange 4 and the tip 4a of the center conductor 4 in which a Ni plating layer is previously applied to the hole 3 with a thickness of 0.5 to 9 μm are made of Ag-Cu alloy or the like. Joined with brazing material. Further, a Ni plating layer is applied to the surface of the center conductor 4 and the brazing material at a thickness of 0.5 to 9 μm, and then an Au plating layer is applied at a thickness of 0.5 to 5 μm. It is made.
[0032]
In the present invention, the gap (thickness of the brazing material) between the tip 4a of the center conductor 4 and the conductor layer 3c on the inner surface of the hole 3 is preferably 0.05 to 0.5 mm. As a result, the bonding strength of the distal end portion 4a can be made sufficient, and it is not necessary to perform a helium leak test or the like for testing the airtightness of the coaxial connector portion, which has been conventionally performed. Can be improved. If the gap is less than 0.05 mm, it will be difficult to perform impedance matching, and reflection loss will occur. On the other hand, if it exceeds 0.5 mm, the holding force of the center conductor 4 by the inner surface of the hole 3 becomes small, and the bonding strength of the center conductor 4 is deteriorated.
[0033]
Specifically, the brazing material for joining the flange portion 4b of the center conductor 4 is an Ag-Cu alloy brazing (BAg) having an Ag content of 71 to 73 wt% (by weight) and a Cu content of 27 to 29 wt%. -8: JIS Z 3261) or the like is used, and brazing is performed at a temperature of 770 to 870 ° C. The thickness of the brazing material is preferably 2 to 20 μm. If the thickness is less than 2 μm, a gap or space is formed in the brazing material, and a portion that is not partially joined occurs, so that the joining strength is easily reduced, and the airtightness is easily impaired. If the thickness exceeds 20 μm, the voids generated in the brazing material are likely to remain without being discharged to the outside, and if thermal stress is generated inside the brazing material, cracks are likely to occur starting from the voids.
[0034]
The Ag-Cu alloy braze has a lower hardness in the brazing material, but still has a relatively large Young's modulus of 91 GPa. Even when an external force is applied, the central axis does not move.
[0035]
The hole 3 having the conductor layer 3b around the opening and having the conductor layer 3c on the inner surface is used because the center conductor 4 inserted and joined to the hole 3 is firmly joined and stabilized by the brazing material, and the hole 3 is not penetrated. The airtightness inside the semiconductor package is not impaired. The gap between the outer peripheral surface of the tip 4a of the center conductor 4 and the conductor layer 3c on the inner surface of the hole 3 is firmly connected via a brazing material having a thickness of 0.05 to 0.5 mm. As a result, the center conductor 4 is free from inconveniences such as horizontal displacement and inclination. As a result, for example, the insulator 8 and the outer conductor 7a provided at the end of the separate coaxial cable 7 are attached to the center conductor 4. Therefore, the high-frequency signal transmission characteristics can be maintained satisfactorily.
[0036]
As shown in FIG. 1, the connection of the coaxial cable 7 to the metal member 6 is performed by fitting. At this time, a socket (not shown) provided at the distal end of the coaxial cable 7 is inserted into the metal member 6, and another central conductor of the coaxial cable is fitted to the central conductor 4 to integrally form the central conductor. It constitutes a conductor. As described above, the center conductor of the coaxial connector is provided with a fitting portion formed of a concave portion, a crack, or the like at the end of the other center conductor of the coaxial cable, and the fitting portion is fitted to the outer end of the center conductor 4. And may be integrated. In this case, the fitting portion of the other central conductor of the coaxial cable is preferably formed in a cylindrical shape having a large diameter, and good fitting is performed.
[0037]
The metal member 6 of the present invention is preferably made of an iron-based alloy such as an Fe-Ni-Co alloy or an Fe-Ni alloy, which has a coefficient of thermal expansion close to that of the substrate 1 made of ceramics such as alumina ceramics. There is an advantage that when the member 4 is brazed to the base 1, cracks and the like hardly occur in the base 1.
[0038]
The outer conductor 7a of the coaxial connector is preferably made of a metal such as an Fe-based alloy such as an Fe-Ni-Co alloy or an Fe-Ni alloy, but a metal having a thermal expansion coefficient similar to that of the metal member 6, or It is preferable that the metal member 6 is made of a metal having a smaller coefficient of thermal expansion. In the case of a metal having the same thermal expansion coefficient as that of the metal member 6, distortion is unlikely to occur between the outer conductor 3a and the metal member 6 during brazing. When the outer conductor 7a is made of a metal having a smaller thermal expansion coefficient than the metal member 6, when the coaxial connector is inserted into the metal member 6 and the outer conductor 3a is brazed to the metal member 6 for reinforcement, the outer conductor 3a is Compressive stress acts on the coaxial connector due to the difference in thermal expansion coefficient, and it is possible to prevent the insulator 8 such as glass from being damaged. Specifically, when the outer conductor 7a is smaller than the coefficient of thermal expansion of the metal member 6, 1 × 10 -6 ~ 3 × 10 -6 The above effect can be obtained when the temperature is smaller by about / ° C.
[0039]
In the semiconductor package of the present invention, the flange 4b of the center conductor 4 is brazed to the conductor layer 3b around the opening of the hole 3 and the tip 4a is brazed to the conductor layer 3c on the inner surface of the hole 3. After the upper end of the member 6 is brazed to the annular electrode 5, the semiconductor element 5 is mounted and fixed on the mounting portion 1a via solder or resin adhesive, and the semiconductor element 5 is mounted on the base 1 via a bonding wire or the like. The semiconductor element A is electrically connected to the center conductor 4 by electrically connecting to the electrode pad 1b on the upper surface, and finally, a cap-shaped lid (not shown) is joined to the outer peripheral portion of the upper surface of the base 1. By doing so, a semiconductor device is obtained. By using the semiconductor package of the present invention, the semiconductor device of the present invention accommodates the semiconductor element 5 operated by a high-frequency signal with good airtightness and good transmission characteristics of the high-frequency signal.
[0040]
【Example】
Embodiments of the package for housing a semiconductor element of the present invention will be described below.
[0041]
First, the semiconductor package of the present invention shown in FIGS. 1 and 2 was manufactured as follows. A substantially square substrate 1 made of alumina ceramics having a length of about 30 mm, a width of about 40 mm, and a thickness of about 2 mm was produced. At this time, the diameter after firing is 0.8, 0.9, 1, 1.1, 1.3, 1.5, 1.7, 1.8, 1.9, 2, Various holes 3 having a depth of 0.03, 0.2, 0.3, 0.4, 0.5, 0.6 and 0.7 (mm) are formed. Then, a through-hole was formed in a part of the ceramic green sheet serving as the base 1, thereby producing a ceramic green sheet laminate.
[0042]
Then, a metal paste made of W having a thickness of about 20 μm was applied to the inner surface of the hole 3 and the periphery of the opening to form metal paste layers to be the conductor layers 3b and 3c. The metal paste layer serving as the conductor layer 3b was formed in a ring shape having a width of 0.5 mm. In order to form a hole having a depth of 0.03 to 0.7 mm, various types of ceramic green sheets having these thicknesses were prepared, and one type was selected from these ceramic green sheets. Then, the laminated body of ceramic green sheets was fired at about 1600 ° C., thereby producing the bases 1 having the above-described 77 types of holes 3. Next, a Ni plating layer and an Au plating layer were sequentially applied to the conductor layers 3b and 3c in the holes 3 of the base 1, and various samples of the base 1 were manufactured in a total of 385 pieces of 5 types each of 77 types.
[0043]
Next, the diameter of the tip portion 4a is 0.9 times (0.45 mm), 1 time (0.5 mm), 1.1 times (0.55 mm), 1.2 times the diameter (0.5 mm) of the remaining portion 4c. Times (0.6 mm), 1.4 times (0.7 mm), 1.6 times (0.8 mm), 1.8 times (0.9 mm), 1.9 times (0.95 mm), 2 times ( 1 mm), 2.1 times (1.05 mm), and 2.2 times (1.1 mm) of various center conductors 4 are prepared, and the center electrode composed of the conductor layers 3b and 3c of each hole 3 of the above various samples is prepared. 3a was inserted and joined via an Ag-Cu alloy brazing (BAg-8), and the joining strength was evaluated.
[0044]
The hole 3 having a diameter of 0.8 mm has a tip 4 a having a diameter of 0.45 mm, the hole 3 having a diameter of 0.9 mm has a tip 4 a having a diameter of 0.5 mm, and the hole 3 having a diameter of 1 mm has a tip 4 a having a diameter of 0.55 mm. In the hole 3 having a diameter of 1.1 mm, the tip 4a having a diameter of 0.6 mm, the hole 3 having a diameter of 1.3 mm, the tip 4a having a diameter of 0.7 mm, and the hole 3 having a diameter of 1.5 mm have a tip having a diameter of 0.8 mm. 4a, a tip 4a having a diameter of 0.9 mm in a hole 3 having a diameter of 1.7 mm, a tip 4a having a diameter of 0.95 mm in a hole 3 having a diameter of 1.8 mm, and a tip 4a having a diameter of 1 mm in a hole 3 having a diameter of 1.9 mm. A tip 4a having a diameter of 1.05 mm was inserted into the hole 3 having a diameter of 2 mm, and a tip 4a having a diameter of 1.1 mm was inserted into the hole 3 having a diameter of 2.1 mm.
[0045]
The joint strength was measured by soldering a metal loop to the outer end of the remaining portion 4c of the center conductor 4, hooking the loop and pulling the hook downward, and the joining strength when the center conductor 4 came off. Was measured. Table 1 shows the results. In Table 1, D represents the depth of the hole 3, R represents the diameter of the tip 4a, and the number in parentheses in the column of R represents the ratio (times) of the diameter of the tip 4a to the diameter of the remaining portion 4c.
[0046]
[Table 1]
Figure 2004111555
[0047]
From Table 1, it was found that the diameter R of the distal end portion 4a of the center conductor 4 of the coaxial connector needs to be larger than one time the diameter of the remaining portion 4c from the viewpoint of bonding strength. When the diameter R of the tip 4a exceeds twice the diameter of the remaining portion 4c, the joining strength increases, but the diameter R of the tip 4a is 10 to 20 times smaller than the diameter R of the remaining portion 4c. It has been found that the stray capacitance increases by about%, and the impedance fluctuates to cause the mismatch. Therefore, it has been found that the diameter R of the distal end portion 4a of the center conductor 4 needs to be more than 1 times and not more than 2 times the diameter of the remaining portion 4c.
[0048]
It should be noted that the present invention is not limited to the above embodiments and examples, and various changes can be made without departing from the spirit of the present invention.
[0049]
【The invention's effect】
A semiconductor element storage package according to the present invention includes: a base made of ceramics provided with a mounting portion on which a semiconductor element is mounted on an upper surface and an electrode pad formed around the mounting portion; and a lower surface of the base. A center electrode electrically connected to the electrode pad via a through conductor, comprising a conductor layer formed from the inner surface of the hole formed to the periphery of the opening; and a center electrode around the center electrode with respect to the center of the hole. An annular electrode formed concentrically, a cylindrical outer conductor, a substantially cylindrical center conductor installed on the center axis thereof, and an insulator interposed therebetween, at a hole portion of the center electrode. The coaxial connector includes a coaxial connector into which the tip of the center conductor is inserted and brazed, and a cylindrical metal member disposed over the outer peripheral surface of the outer conductor and brazed at the upper end to the annular electrode. The center conductor is A flange is formed at the boundary between the end and the rest, and the flange is brazed to a portion around the opening of the hole in the center electrode, and the diameter of the tip is one times the diameter of the rest. The hole formed on the lower surface of the substrate can be formed by forming a through hole in the ceramic green sheet in advance and laminating and firing the ceramic green sheet. It is not necessary to form it by mechanical processing, it can be formed with high shape accuracy, and since the tip and the flange of the center conductor are firmly joined to the center electrode, it is possible to provide a coaxial connector with high accuracy and coaxial connector At this point, the airtightness of the package for housing semiconductor elements becomes extremely good.
[0050]
In addition, by adjusting the distance between the flange portion and the upper end of the metal member, impedance matching can be easily and accurately performed in a high-frequency signal transmission path from the coaxial cable connected to the coaxial connector to the electrode pad on the upper surface of the base. Can be done. Therefore, the reflection loss of the high-frequency signal generated due to the impedance mismatch is almost eliminated, and an extremely good high-frequency signal transmission characteristic can be obtained.
[0051]
The semiconductor device of the present invention includes the semiconductor element housing package of the present invention, a semiconductor element mounted and fixed on a mounting portion and electrically connected to a coaxial connector, and joined to an outer peripheral portion of an upper surface of a base. With such a cover, airtightness and transmission characteristics of high-frequency signals are excellent.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an example of an embodiment of a package for housing a semiconductor element of the present invention.
FIG. 2 is an enlarged sectional view of a main part of the package for housing a semiconductor element of FIG. 1;
FIG. 3 is a cross-sectional view of a conventional semiconductor element storage package.
FIG. 4 is an enlarged cross-sectional view of a coaxial connector portion of the semiconductor device housing package of FIG. 4;
[Explanation of symbols]
1: Substrate
1a: Receiver
1b: Electrode pad
1c: Through conductor
3: Hole
3a: center electrode
3b, 3c: conductor layer
4: center conductor
4a: Tip
4b: Tsuba
4c: remainder
5: Ring electrode
6: Metal member
7a: outer conductor
8: Insulator
A: Semiconductor element

Claims (2)

上面の中央部に半導体素子が載置される載置部および該載置部の周囲に形成された電極パッドが設けられたセラミックスから成る基体と、該基体の下面に形成された穴の内面から開口の周囲にかけて形成された導体層から成る、前記電極パッドに貫通導体を介して電気的に接続された中心電極と、該中心電極の周囲に前記穴の中心に対して略同心状に形成された円環状電極と、円筒状の外周導体およびその中心軸に設置された略円柱状の中心導体ならびにそれらの間に介在させた絶縁体から成る、前記中心電極の前記穴の部位に前記中心導体の先端部が挿入されロウ付けされた同軸コネクタと、前記外周導体の外周面を覆って配置されて前記円環状電極に上端がロウ付けされた円筒状の金属部材とを具備しており、前記同軸コネクタの前記中心導体は、前記先端部とその残部との境界部に鍔部が形成されて該鍔部が前記中心電極の前記穴の開口の周囲の部位にロウ付けされているとともに、前記先端部の直径がその残部の直径の１倍を超え２倍以下とされていることを特徴とする半導体素子収納用パッケージ。A base made of ceramics provided with a mounting portion on which a semiconductor element is mounted at the center of the upper surface and electrode pads formed around the mounting portion, and an inner surface of a hole formed in the lower surface of the base. A center electrode made of a conductor layer formed around the opening, electrically connected to the electrode pad via a through conductor, and formed substantially concentrically around the center electrode with respect to the center of the hole; An annular electrode, a cylindrical outer conductor, a substantially columnar center conductor provided on the center axis thereof, and an insulator interposed therebetween. A coaxial connector having a tip portion inserted and brazed, and a cylindrical metal member disposed over the outer peripheral surface of the outer conductor and brazed at the upper end to the annular electrode, Inside the coaxial connector The conductor has a flange formed at the boundary between the tip and the remaining portion, and the flange is brazed to a portion around the opening of the hole of the center electrode, and the diameter of the tip is reduced. A package for housing a semiconductor element, wherein the diameter of the remaining portion is more than 1 time and not more than 2 times. 請求項１記載の半導体素子収納用パッケージと、前記載置部に載置固定されるとともに前記同軸コネクタに電気的に接続された半導体素子と、前記基体の上面の外周部に接合された蓋体とを具備したことを特徴とする半導体装置。2. The semiconductor device storage package according to claim 1, a semiconductor device mounted and fixed to the mounting portion and electrically connected to the coaxial connector, and a lid joined to an outer peripheral portion of an upper surface of the base. And a semiconductor device comprising:
JP2002270438A 2002-09-17 2002-09-17 Semiconductor element storage package and semiconductor device Expired - Fee Related JP3881606B2 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107262863A (en) * 2017-06-26 2017-10-20 安徽华东光电技术研究所 Insulator assembly welding tool for waveguide coaxial conversion and welding method thereof
CN112086371A (en) * 2020-08-19 2020-12-15 中国电子科技集团公司第二十九研究所 Broadband radio frequency board level interconnection integration method, structure and device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107262863A (en) * 2017-06-26 2017-10-20 安徽华东光电技术研究所 Insulator assembly welding tool for waveguide coaxial conversion and welding method thereof
CN107262863B (en) * 2017-06-26 2019-07-02 安徽华东光电技术研究所 Insulator assembly welding tool for waveguide coaxial conversion and welding method thereof
CN112086371A (en) * 2020-08-19 2020-12-15 中国电子科技集团公司第二十九研究所 Broadband radio frequency board level interconnection integration method, structure and device

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