JP2003243552A - Package for accommodating semiconductor device and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for semiconductor device accommodation that can input and output a high-frequency signal having a high-frequency band of approximately 2 to 25 GHz with low loss. <P>SOLUTION: The package has a substrate 1 composed of an insulating material where a mounting section for mounting a semiconductor device 2 on the bottom surface of a recess 1a on an upper surface is provided and is set to be a nearly rectangular parallelepiped, a metallized layer 1c formed at the outer periphery of the lower surface of the substrate 1, and a lead terminal 5 that comprises an upper end joined to the metallized layer 1c, a middle section 5a slantingly extending from the upper end to a lower portion outside the substrate 1, and a lower end nearly in parallel with the upper end. In the lead terminal 5, the upper end and the middle section 5a are provided inside of an extended surface on the side of the substrate 1. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for housing a semiconductor element that operates with a high frequency signal, and a semiconductor device.

[0002]

2. Description of the Related Art A conventional semiconductor element housing package (hereinafter, also referred to as a semiconductor package) is shown in a sectional view in FIG. This semiconductor package is a substantially rectangular parallelepiped base 101 made of an insulating material having a recess 101a on the upper surface and a mounting portion for mounting the semiconductor element 102 on the bottom of the recess 101a.
And a second metallization layer 101c for connecting lead terminals formed on the outer peripheral portion of the lower surface of the base body 101, an upper end portion joined to the second metallization layer 101c, and an inclination downward to the outside of the base body 101 from the upper end portion. Thus, there is provided the intermediate portion 105a extended and the lead terminal 105 having a lower end portion substantially parallel to the upper end portion. A metal seal ring 103 for seam-welding the lid 104 is joined to the upper surface of the base body 101. The intermediate portion (inclined portion) 105 a of the lead terminal 105 is located outside from the extended surface of the side surface of the base body 101.

The second metallization layer 101c is electrically connected to the first metallization layer 101b formed in the recess 101a through the through conductor 101d, and the first metallization layer 10c is formed.
1b and the semiconductor element 102 are electrically connected by a bonding wire 106. By connecting the lead terminal 105 to a line conductor (not shown) of the external electric circuit board 107 and inputting / outputting a high frequency signal to / from the lead terminal 105, a high frequency signal between the semiconductor element 102 and the external electric circuit board 107 is transmitted. Transmission becomes possible.

Further, since the lead terminal 105 has the intermediate portion 105a which is bent and inclined, the lead terminal 105
Even when the semiconductor package is mounted on the external electric circuit board 107 via the intermediate circuit 105a, the intermediate portion 105a absorbs the difference in thermal expansion between the base body 101 and the external electric circuit board 107, and the base body 101 is mounted on the external electric circuit board 107.
It is possible to prevent a large stress from being applied due to a difference in thermal expansion between the two.

[0005]

[Problems to be Solved by the Invention] However, 2 to 25
When a high frequency signal in the high frequency band of about GHz is input to or output from the semiconductor package, the resistance increases by the length of the second metallization layer 101c in addition to the inductance of the intermediate portion 105a, so that impedance is matched at these portions. However, there is a problem in that the reflection loss and the transmission loss of the high frequency signal increase in the intermediate portion 105a and the second metallization layer 101c.

Therefore, the present invention has been completed in view of the above conventional problems, and an object thereof is to provide a semiconductor package capable of inputting and outputting a high frequency signal in a high frequency band of about 2 to 25 GHz with low loss. is there.

[0007]

A semiconductor element housing package of the present invention is a substantially rectangular parallelepiped base body made of an insulating material in which a mounting portion for mounting a semiconductor element is provided on the bottom surface of a recess formed on the upper surface. A metallization layer formed on the outer peripheral portion of the lower surface of the base, an upper end joined to the metallization layer, an intermediate part extending from the upper end so as to incline downward to the outside of the base, and the upper end. In a package for housing a semiconductor element, comprising: a lead terminal having a lower end portion substantially parallel to the portion, the lead terminal has the upper end portion and the intermediate portion provided inside an extension surface of a side surface of the base body. Is characterized by.

The package for housing a semiconductor device of the present invention is
With the above configuration, since the intermediate portion is located below the metallized layer, an electrical capacitance component is generated between the intermediate portion and the metallized layer, and this capacitance component increases the impedance due to the inductance component of the intermediate portion. The effect of canceling out is to eliminate the impedance deviation. Also,
Since the upper ends of the lead terminals are joined to the inner circumference side of the metallized layer, the resistance due to the length of the metallized layer can be reduced. As a result, the impedance is matched,
Even if a high frequency signal in a high frequency band of about 2 to 25 GHz is input to and output from the semiconductor element housing package, it is possible to reduce reflection loss and transmission loss and efficiently transmit. Therefore, it is possible to accommodate a semiconductor element operating in a high frequency band of about 2 to 25 GHz without any problem.

Further, since the lead terminal has the intermediate portion which is bent and inclined, when the semiconductor element housing package is mounted on the external electric circuit board via the lead terminal, it is provided between the base body and the external electric circuit board. Even if there is a difference in thermal expansion, the intermediate portion absorbs the difference in thermal expansion, so that it is possible to prevent a large stress from being applied to the base body due to the difference in thermal expansion from the external electric circuit board.

A semiconductor device according to the present invention is a semiconductor device which is mounted on and fixed to the above-mentioned package for housing a semiconductor device according to the present invention and which is electrically connected to the lead terminal through the metallized layer. And a lid joined to the upper surface of the base body.

With the above structure, the semiconductor device of the present invention is capable of efficiently inputting and outputting a high frequency signal, and has a high reliability capable of operating the semiconductor element normally and stably for a long period of time.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION The semiconductor element housing package of the present invention will be described in detail below. FIG. 1 is a sectional view showing an example of an embodiment of a semiconductor package of the present invention. In the figure, reference numeral 1 denotes an insulating material having a recess 1a on the upper surface, a mounting portion for mounting the semiconductor element 2 on the bottom surface of the recess 1a, and a second metallized layer 1c deposited on the lower surface. It is a substantially rectangular parallelepiped base body. 3 is a metal seal ring for seam-welding the lid 4 on the upper surface of the base body 1, and 5 is a lead terminal in which the upper end portion and the intermediate portion 5a are provided inside the extension surface of the side surface of the base body 1. And the upper end is joined to the second metallization layer 1c. These base 1, seal ring 3 and lead terminal 5
The semiconductor package is mainly composed of.

The material of the substrate 1 of the present invention is alumina (Al
₂ O ₃ ) Ceramics such as aluminum nitride (AlN) ceramics, insulating materials such as resin,
It is appropriately selected according to the characteristics such as the dielectric constant and the thermal expansion coefficient and the characteristics of the semiconductor element 2.

A first metallization layer 1b is deposited on the inner surface of the recess 1a of the substrate 1, and the first metallization layer 1b is formed.
And the second metallization layer 1c are electrically connected to each other through the through conductor 1d, and the upper end portion of the lead terminal 5 is joined to the second metallization layer 1c by a brazing material such as silver (Ag) brazing. Then, the lower end portion of the lead terminal 5 is joined to a line conductor (not shown) of the external electric circuit board 7 by soldering or the like. The lower end portion of the lead terminal 5 is preferably a flat surface substantially parallel to the lower surface of the base 1 in order to firmly bond it to the external electric circuit board 7 by soldering or the like. In that case, since the lower surface of the base 1 can be parallel to the upper surface of the external electric circuit board 7, the base 1 can be stably bonded to the external electric circuit board 7.

The lower end of the lead terminal 5 is connected to the line conductor of the external electric circuit board 7 by soldering or the like, so that the semiconductor package is mounted on the external electric circuit board 7. The lead terminal 5 is preferably made of a metal having a coefficient of thermal expansion close to that of the substrate 1 in order to effectively prevent thermal strain due to a difference in thermal expansion coefficient with the substrate 1 and to enable transmission of high frequency signals. As the metal, an Fe-Ni alloy, an Fe-Ni-Co alloy, or the like is preferable,
For example, an Fe-Ni-Co alloy ingot (lump) is formed into a predetermined shape by subjecting the ingot (lump) to a conventionally known metal working method such as a rolling working method or a punching working method.

As shown in a partially enlarged sectional view of FIG. 2, the lead terminal 5 preferably has an intermediate portion 5a inclined with respect to the lower surface of the base body 1 by θ = 30 to 60 °. As a result, the semiconductor package is mounted on the external electric circuit board 7 and the base 1
Even if there is a difference in thermal expansion between the external electric circuit board 7 and the external electric circuit board 7, the intermediate portion 5a appropriately deforms and absorbs the difference in thermal expansion, and the base 1 has a large stress due to the difference in thermal expansion with the external electric circuit board 7. Can be prevented. When θ <30 °, since the bending angle of the intermediate portion 5a is small, the base 1 and the external electric circuit board 7
When a difference in thermal expansion occurs between and, it becomes difficult for the intermediate portion 5a to deform and absorb the difference in thermal expansion, and a large stress is likely to be applied to the lower surface of the substrate 1. When θ> 60 °, middle part 5a
A good meniscus of a brazing material cannot be formed between the upper end of the base metal 1 and the second metallized layer 1c, and the bonding strength between the base 1 and the lead terminal 5 is likely to decrease.

In order to make the high frequency signal in the 2 to 25 GHz band efficient, the lead terminal 5 has a distance X between the lower end of the intermediate portion 5a and the extended surface of the side surface of the substrate 1 and a height of the lead terminal 5. Regarding Y, X ≧ 0.2mm, 0.5mm ≦ Y
≦ 1mm is good. In the case of X <0.2 mm, since X is short, the lower end of the intermediate portion 5a jumps out from the substrate 1 when a difference in thermal expansion occurs between the substrate 1 and the external electric circuit board 7, and the substrate of the intermediate portion 5a The impedance component becomes large at the portion protruding outside 1 and impedance matching cannot be performed. As a result, a reflection loss and a transmission loss occur in the high frequency signal transmitted through the intermediate portion 5a, and the transmission characteristics at the intermediate portion 5a deteriorate. Easier to do. When Y <0.5 mm, the middle part 5
Since a is short, when a difference in thermal expansion occurs between the base body 1 and the external electric circuit board 7, the intermediate portion 5a cannot absorb the difference in thermal expansion, and a large stress is applied to the lower surface of the base body 1. May cause cracks in. If Y> 1 mm, middle part 5
Since a becomes too long, the transmission loss of the high frequency signal transmitted through the intermediate portion 5a tends to increase.

The first metallized layer 1b and the second metallized layer 1c of the present invention are made of a refractory metal powder such as tungsten (W), molybdenum (Mo), manganese (Mn), or the like, and an appropriate organic binder, solvent or the like. The metal paste obtained by the addition and mixing is printed and applied in a predetermined pattern on a multilayer laminate of ceramic green sheets to be the substrate 1 by a conventionally known screen printing method, and then baked to obtain the substrate 1.
It is deposited on. Alternatively, after firing the multilayer laminate of the ceramic green sheets to be the base 1, the fired body is printed and coated with a metal paste in a predetermined pattern, and the metal paste is fired to form a coating on the base 1.

The through conductor 1d is composed of a via hole, a through hole, etc., and a through hole serving as a through conductor is formed at a desired position of each ceramic green sheet.
The first metallized layer 1 is filled with an organic solvent and a metal paste obtained by adding and mixing a solvent to powders of W, Mo, Mn, etc.
b, it is manufactured by sintering at the same time as the metal paste to be the second metallized layer 1c.

On the upper surface of the substrate 1, thermal strain due to the difference in thermal expansion coefficient from the substrate 1 is effectively prevented, and the substrate 1 is
The metal seal ring 3 that is joined to the upper surface of the above and enables seam welding of the lid body 4 is joined via a brazing material such as Ag brazing. As the metal, Fe-Ni alloy or Fe-
Ni-Co alloy or the like is preferable, and for example, it is formed into a predetermined shape by subjecting an ingot (lump) of Fe-Ni-Co alloy to a conventionally known metal working method such as a rolling working method or a punching working method.

Thus, the semiconductor package of the present invention is
A substantially rectangular parallelepiped base body 1 made of an insulating material in which a mounting portion for mounting the semiconductor element 2 is provided on the bottom surface of the concave portion 1a formed on the upper surface, and a metallized layer 1c formed on the outer peripheral portion of the lower surface of the base body 1. And a lead terminal 5 including an upper end portion joined to the metallized layer 1c, an intermediate portion 5a extending from the upper end portion so as to incline downward to the outside of the base 1, and a lower end portion substantially parallel to the upper end portion. The lead terminal 5 has an upper end portion and an intermediate portion 5 a provided inside the extension surface of the side surface of the base body 1.

The semiconductor device of the present invention is mounted on the mounting portion of the semiconductor package of the present invention and fixed, and the lead terminal 5 is provided via the first metallization layer 1b, the through conductor 1d and the second metallization layer 1c. The semiconductor element 2 electrically connected to the base 1 and the lid 4 bonded to the upper surface of the base 1. Specifically, the semiconductor element 2 is mounted on the mounting portion of the base 1.
Are bonded and fixed via an adhesive such as glass, resin or brazing material, each electrode of the semiconductor element 2 is connected to the first metallization layer 1b by the bonding wire 6, and then the seal ring 3 is attached to the upper surface of the substrate 1. The lid 4 is joined by seam welding or the like to seal the semiconductor element 2 in a hermetically sealed state. Then, the semiconductor element 2
And the external electric circuit board 7 are electrically connected via the lead terminal 5.

[0023]

EXAMPLE An example of a package for housing a semiconductor device according to the present invention will be described below.

The semiconductor package shown in FIG. 1 was constructed as follows. A first metallization layer 1b made of Mo-Mn is formed on the bottom surface of the recess 1a on the upper surface, and Mo is formed on the outer peripheral portion of the lower surface.
A second metallization layer 1c made of —Mn is formed, and the first metallization layer 1b and the second metallization layer 1c are M.
A rectangular parallelepiped substrate 1 made of alumina ceramics connected by a through conductor 1d filled with o-Mn was prepared. The upper end portion is joined to the second metallized layer 1c on the lower surface of the base body 1 by Ag solder, and the upper end portion and the intermediate portion 5 are formed.
a is Fe- provided inside from the extended surface of the side surface of the substrate 1.
A lead terminal 5 made of a Ni-Co alloy is provided on the lower surface of the base body 20.
A semiconductor package was manufactured by providing this. This semiconductor package of the present invention is referred to as Sample A. In the sample A, the intermediate portion 5a is inside the extended surface of the side surface of the substrate 1, and specifically, X = 0.25 m for X and Y in FIG.
m, Y = 0.5 mm.

Further, as a comparative example, the intermediate portion 5a of the lead terminal 5 was projected 0.75 mm outward from the extended surface of the side surface of the base body 1, and Y = 0.5 mm was prepared in the same manner as in the above embodiment. This was designated as Sample B.

FIG. 4 shows the results of measuring the reflection loss of samples A and B by inputting a high frequency signal of 2 to 25 GHz to the lead terminal 5. As shown in FIG. 4, the sample A has a smaller reflection loss at 5 to 17 GHz and 19 to 25 GHz than the sample B, and particularly the reflection loss is significantly improved at 5 to 17 GHz.

The present invention is not limited to the above embodiments and examples, and various modifications may be made without departing from the scope of the present invention.

[0028]

The package for housing a semiconductor element of the present invention comprises a base of a substantially rectangular parallelepiped made of an insulating material, and a base on which a semiconductor element is mounted is provided on the bottom surface of a recess formed on the top surface of the base. It is composed of a metallization layer formed on the outer peripheral portion of the lower surface, an upper end portion joined to the metallization layer, an intermediate portion extending so as to incline downward from the upper end portion to the outside of the base body, and a lower end portion substantially parallel to the upper end portion. The lead terminal is provided with the upper end portion and the intermediate portion inside the extension surface of the side surface of the base body, so that the intermediate portion is located below the metallization layer. An electrical capacitance component is generated between the metallization layer and the metallization layer, and this capacitance component acts to cancel the increase in impedance due to the inductance component in the middle portion, and the shift in impedance is eliminated. Further, since the upper end portion of the lead terminal is joined to the inner peripheral side of the metallized layer, the resistance due to the length of the metallized layer can be reduced. As a result, even if the impedance is matched and a high frequency signal in a high frequency band of about 2 to 25 GHz is input to and output from the semiconductor element housing package, the reflection loss and the transmission loss can be reduced and the transmission can be efficiently performed. Therefore, it is possible to accommodate a semiconductor element operating in a high frequency band of about 2 to 25 GHz without any problem.

Further, since the lead terminal has the intermediate portion which is bent and inclined, when the semiconductor element housing package is mounted on the external electric circuit board via the lead terminal, the lead terminal is provided between the base body and the external electric circuit board. Even if there is a difference in thermal expansion, the intermediate portion absorbs the difference in thermal expansion, so that it is possible to prevent a large stress from being applied to the base body due to the difference in thermal expansion from the external electric circuit board.

The semiconductor device of the present invention comprises the above-mentioned package for accommodating a semiconductor element of the present invention, a semiconductor element mounted and fixed on a mounting portion and electrically connected to a lead terminal through a metallization layer, and a substrate. By including the lid body joined to the upper surface of the above, it becomes possible to efficiently input and output a high frequency signal and to operate the semiconductor element normally and stably for a long time with high reliability.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of a package for housing a semiconductor element of the present invention.

FIG. 2 is a partial enlarged cross-sectional view of a peripheral portion of a lead terminal in the semiconductor element housing package of FIG.

FIG. 3 is a cross-sectional view of a conventional semiconductor element housing package.

FIG. 4 is a graph showing the results of measuring the reflection loss of a high-frequency signal for the semiconductor device housing package of the present invention and the conventional semiconductor device housing package.

[Explanation of symbols]

1: Base 1a: recess 1c: Metallized layer 2: Semiconductor element 5: Lead terminal 5a: middle part

Claims (2)

[Claims] 1. A substantially rectangular parallelepiped base body made of an insulating material, in which a mounting portion for mounting a semiconductor element is provided on the bottom surface of a recess formed on the upper surface, and a metallization formed on the outer peripheral portion of the lower surface of the base body. And a lead terminal having an upper end joined to the metallized layer, an intermediate part extending from the upper end so as to incline downward to the outside of the base, and a lower end substantially parallel to the upper end. In the semiconductor element storage package described above, the lead terminal has the upper end portion and the intermediate portion provided inside an extension surface of a side surface of the base body. 2. The package for accommodating a semiconductor element according to claim 1, a semiconductor element mounted and fixed on the mounting portion and electrically connected to the lead terminal through the metallization layer, and the base body. And a lid joined to the upper surface of the semiconductor device.