JP3840160B2

JP3840160B2 - High frequency device storage package

Info

Publication number: JP3840160B2
Application number: JP2002250797A
Authority: JP
Inventors: 篤大西; 道信飯野
Original assignee: Kyocera Corp
Current assignee: Kyocera Corp
Priority date: 2002-08-29
Filing date: 2002-08-29
Publication date: 2006-11-01
Anticipated expiration: 2022-08-29
Also published as: JP2004095598A

Description

【０００１】
【発明の属する技術分野】
本発明は、光通信分野やマイクロ波通信、ミリ波通信等の分野で用いられる、高い周波数帯域で動作する各種半導体素子を収納する高周波素子収納用パッケージに関する。
【０００２】
【従来の技術】
従来の光通信やマイクロ波通信、ミリ波通信等で使用される、高い周波数で作動する各種半導体素子を収納する高周波素子収納用パッケージの断面図を図２に示す。
図２に示すように、従来の高周波素子収納用パッケージは、主に回路基板101と、金属枠体102と、同軸コネクタ（ガラスビーズ端子ともいう）103と、蓋体106とから構成されている。
【０００３】
回路基板101は、セラミックスから成る絶縁層101ａおよび配線導体層101ｂを交互に複数層積層して成るとともに側面に配線導体層101ｂを構成する接地導体101ｃが露出している。配線導体層101ｂは、少なくとも接地導体101ｃを含み、通常は信号配線導体、電源導体および接地導体101ｃで構成されている。信号配線導体は高周波素子107に高周波信号を伝達する機能を、電源導体は高周波素子107に電源電圧を供給する機能を、そして接地導体101ｃは高周波素子107や信号配線導体へのノイズ等の侵入を阻止するシールドの機能を有する。また、回路基板101は、上面にＳｉＧｅなどのＳｉ系やＧａＡｓ、ＩｎＰといった化合物系の高周波素子107が搭載される搭載部Ｓを有している。なお、上下に位置する信号配線導体や電源導体、接地導体101ｃ同士は、絶縁層101ａに形成された貫通導体（図示せず）により電気的に接続されている。
【０００４】
また、金属枠体102は、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属材料から成り、回路基板101の側面に、搭載部Ｓを囲繞するとともに側面に露出した接地導体101ｃと電気的に接続するようにろう材や樹脂などの導電性接合材108を介して取着されており、側部には貫通孔102ａが形成されている。
【０００５】
さらに、同軸コネクタ103は、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属材料から成る外周導体103ａと、その中心軸に配置された、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属材料から成る中心導体103ｃと、それらの間に介在させた、硼珪酸ガラス等の誘電体材料から成る絶縁体103ｂとから成り、金属枠体102の貫通孔102ａ内周面にＡｕ−Ｓｎ合金半田等のろう材により嵌着されているとともに、中心導体103ｃが回路基板101表面に形成された信号配線導体と電気的に接続されている。なお、同軸コネクタ103は、外部電気回路（図示せず）と高周波素子107とを電気的に接続する機能を有するとともに高周波素子収納用パッケージ内部を塞ぐ機能を有し、高周波信号が伝送される中心導体103ｃと外周導体103ａとが、高周波信号伝送時のインピーダンスの整合が可能な同軸構造を成している。
【０００６】
そして、このような高周波素子収納用パッケージは、高周波素子107を回路基板101の搭載部Ｓに樹脂やろう材等の接着材で固定するとともに高周波素子107の各電極を配線導体層101ｂにワイヤボンディング110等の接続手段を用いて電気的に接続し、しかる後、金属枠体102上面に例えば金属材料から成る蓋体106をシーム溶接やろう付け等により接合することにより、製品としての高周波装置となる。
【０００７】
また、この高周波装置は、例えば外部から供給される低周波信号を回路基板101の下面に形成した半田ボール104を介して高周波素子107に伝達し、高周波素子107にて時間多重（ＴＤＭ）を施し、高周波信号として同軸コネクタから出力させることにより、大容量の情報を高速に伝送できる伝送変換装置として機能させることができる。
【０００８】
【発明が解決しようとする課題】
しかしながら、上記の高周波素子収納用パッケージにおいては、同軸コネクタ103の外周導体103ａと金属枠体102との接合が広い面積で半田等のろう材を介して強固になされているものの、金属枠体102と回路基板101の接地導体101ｃとの接合は、金属枠体102と厚みが数μｍ程度の接地導体101ｃにおける回路基板101の側面へ露出した部位との狭い面積での接合であること、および半田等のろう材から成る導電性接合材108の粘度が高いことから、両者を接続する導電性接合材108にボイド等の隙間があった場合、金属枠体102と回路基板101の接地導体101ｃとの電気的接続が不安定となり、信号配線導体へのノイズ等の侵入を阻止するシールド機能が低下し、その結果、高周波領域において共振が発生し反射損失が増大し、高周波素子の高周波特性が劣化してしまうという問題点を有していた。
【０００９】
本発明は上記問題点に鑑み完成されたもので、その目的は、金属枠体と回路基板の接地導体との電気的接続が安定で、高周波領域において共振が発生して反射損失が増大することのない、高周波特性に優れた高周波素子収納用パッケージを提供することにある。
【００１０】
【課題を解決するための手段】
本発明の高周波素子収納用パッケージは、絶縁層および少なくとも接地導体を含む配線導体層を交互に複数層積層して成り、上面に高周波素子が搭載される搭載部を有する回路基板と、該回路基板の側面に前記搭載部を囲繞するとともに前記接地導体と電気的に接続するように取着された金属枠体とを具備して成る高周波素子収納用パッケージにおいて、前記回路基板は、前記上面側に位置する第一の回路基板と、下面側に位置し、前記第一の回路基板の下面に前記第一の回路基板の前記接地導体の一部が露出するように、側面が前記第一の回路基板の側面より内側に位置する第二の回路基板とから成り、前記金属枠体は前記第二の回路基板の側面と対向する部位の内周面が突出した突出部を有しており、該突出部の上面は前記第一の回路基板の前記下面に露出した前記接地導体と導電性接合材を介して接合されていることを特徴とするものである。
【００１１】
本発明の高周波素子収納用パッケージによれば、回路基板が上面側に位置する第一の回路基板と、下面側に位置し、第一の回路基板の下面に第一の回路基板の接地導体の一部が露出するように、側面が第一の回路基板の側面より内側に位置する第二の回路基板とから成り、金属枠体が第二の回路基板の側面と対向する部位の内周面が突出した突出部を有しており、この突出部の上面が第一の回路基板の下面に露出した接地導体と導電性接合材を介して接合されていることから、金属枠体と接地導体との接合が金属枠体の突出部の上面と第一の回路基板の下面に露出した接地導体との導電性接合材を介しての広い面積での接合となり、半田等の粘度が高い導電性接合材を用いて両者を接合した際に導電性接合材にボイドなどの隙間が発生したとしても、金属枠体と回路基板の接地導体との電気的接続が不安定となることはなく、その結果、高周波領域において共振が発生し反射損失が増大してしまい、高周波素子の高周波特性が劣化してしまうということはない。
【００１２】
【発明の実施の形態】
次に、本発明の高周波素子収納用パッケージを添付の図面に基づいて詳細に説明する。図１は、本発明の高周波素子収納用パッケージの実施の形態の一例を示す断面図である。
【００１３】
この図において、１は高周波素子を搭載する回路基板、２は金属枠体、３は高周波信号の入出力端子である同軸コネクタ、４は回路基板の配線導体層と貫通導体（図示せず）で電気的に接続されているＢＧＡ（ＢａｌｌＧｒｉｄＡｌｌａｙ）のボール部、６は蓋体、７はＳｉＧｅなどＳｉ系もしくはＧａＡｓやＩｎＰなどの化合物半導体素子等の高周波素子である。そして本発明の高周波素子収納用パッケージは、回路基板１および金属枠体２を具備し、必要に応じて同軸コネクタ３やボール部４・蓋体６等が付加される。
【００１４】
回路基板１は、光通信やマイクロ波通信、ミリ波通信等で使用される、高い周波数で作動する各種半導体素子等の高周波素子７を支持するための支持部材ならびに高周波素子７が発する熱を外部へ放散するための放熱板として機能し、その上面の中央部には高周波素子７を搭載する搭載部Ｓを有する。
【００１５】
このような回路基板１は、絶縁層１ａおよび配線導体層１ｂを交互に複数層積層することにより形成されている。
絶縁層１ａは、エポキシ樹脂等の有機絶縁材料や、酸化アルミニウム質焼結体・ムライト質焼結体・窒化アルミニウム質焼結体・炭化珪素質焼結体等のセラミックス等の無機絶縁材料から成り、放熱性の観点からはセラミックス等の無機絶縁材料から成ることが好ましい。絶縁層１ａは、例えば酸化アルミニウム質焼結体から成る場合であれば、酸化アルミニウム・酸化珪素・酸化マグネシウム・酸化カルシウム等の原料粉末に適当な有機バインダ・溶剤・可塑剤・分散剤等を添加混合して泥漿物を作り、この泥漿物を従来周知のドクターブレード法やカレンダーロール法等のシート成形法を採用しシート状に成形してセラミックグリーンシート（セラミック生シート）を得、しかる後、それらセラミックグリーンシートに適当な打ち抜き加工を施すとともにこれを複数枚積層し、約1600℃の高温で焼成することによって製作される。
【００１６】
また、配線導体層１ｂは少なくとも接地導体１ｃを含み、通常は信号配線導体、電源導体および接地導体１ｃで構成されている。信号配線導体は高周波素子７に高周波信号を伝達する機能を、電源導体は高周波素子７に電源電圧を供給する機能を、そして接地導体１ｃは高周波素子７や信号配線導体へのノイズ等の侵入を阻止するシールドの機能を有する。なお、上下に位置する信号配線導体、電源導体および接地導体１ｃ同士は、各絶縁層１ａに形成された貫通導体（図示せず）を介して電気的に接続されており、回路基板１の搭載部Ｓ近傍に位置する配線導体層１ｂに高周波素子７の各電極をボンディングワイヤ10等を介して電気的に接続することにより、高周波素子７の各電極は回路基板１の下面に形成された、後述する半田等の導電性部材から成るボール部４に電気的に接続されることとなる。
【００１７】
なお、高周波素子７を回路基板１の搭載部ＳにＳｎ−Ｐｂ半田等の低融点ろう材を介して接着固定することにより、高周波素子７が発する熱を低融点ろう材を介して外部に効率良く放散することができ、高周波素子７の作動性をより良好なものとすることができる。
【００１８】
このような配線導体層１ｂは、絶縁層１ａが例えば酸化アルミニウム質焼結体から成る場合であれば、タングステン・モリブデン・マンガン等の高融点金属粉末に適当な有機溶剤・溶媒・可塑剤等を添加混合して得た金属ペーストを従来周知のスクリーン印刷法等の厚膜手法を採用して絶縁層１ａとなるセラミックグリーンシートにあらかじめ印刷塗布しておき、これをセラミックグリーンシートと同時に焼成することによって絶縁層１ａの所望の箇所に所定パターンに被着形成される。
【００１９】
そして本発明の高周波素子収納用パッケージにおいては、回路基板１は上面側に位置する第一の回路基板１Ａと、下面側に位置し、第一の回路基板１Ａの下面に第一の回路基板１Ａの接地導体１ｃの一部が露出するように、側面が第一の回路基板１Ａの側面より内側に位置する第二の回路基板１Ｂとから構成されており、また、このことが重要である。
【００２０】
本発明の高周波素子収納用パッケージによれば、回路基板１が上面側に位置する第一の回路基板１Ａと、下面側に位置し、第一の回路基板１Ａの下面に第一の回路基板１Ａの接地導体１ｃの一部が露出するように、側面が第一の回路基板１Ａの側面より内側に位置する第二の回路基板１Ｂとから構成されていることから、回路基板１の接地導体１ｃと後述する金属枠体２との導電性接合材９を介しての接合を金属枠体２の突出部２ｂの上面と第一の回路基板１Ａの下面に形成された接地導体１ｃとの導電性接合材９を介しての広い面積での接合とすることが可能となり、半田等の粘度が高い導電性接合材９を用いて両者を接合した際に導電性接合材９にボイドなどの隙間が発生したとしても、金属枠体２と回路基板１の接地導体１ｃとの電気的接続が不安定となることはなく、その結果、高周波領域において共振が発生し反射損失が増大してしまい、高周波素子７の高周波特性が劣化してしまうということはない。
【００２１】
なお、第一の回路基板１Ａおよび第二の回路基板１Ｂは、それぞれ１層以上の絶縁層１ａおよび配線導体層１ｂから成り、それぞれの層数については配線導体層１ｂの密度や製品の大きさ等により適宜決められる。
【００２２】
また、第二の回路基板１Ｂの側面が第一の回路基板１Ａの側面より５ｍｍを超えて内側に位置した場合、第一の回路基板１Ａ外周の第二の回路基板１Ｂより外側に突出した絶縁層１ａにクラックや欠けが発生し易くなる傾向があり、また、0.5ｍｍ未満内側に位置した場合、金属枠体２の突出部２ｂの上面と第一の回路基板１Ａの下面に形成された接地導体１ｃとの導電性接合材９を介しての金属枠体２と第一の回路基板１Ａの接合が狭い面積を介しての接合となり、半田等の粘度が高い導電性接合材９を用いて両者を接合した際に導電性接合材９にボイドなどの隙間が発生した場合、金属枠体２と回路基板１の接地導体１ｃとの電気的接続が不安定となり、高周波領域において共振が発生し反射損失が増大してしまい、高周波素子７の高周波特性が劣化してしまう傾向がある。
【００２３】
金属枠体２はＦｅ−Ｎｉ−Ｃｏ合金やＣｕ−Ｗ合金等の金属材料から成り、回路基板１の側面に、搭載部Ｓを取り囲むように取着されている。また、側部には貫通孔２ａが形成されている。
【００２４】
金属枠体２は、回路基板１に搭載される高周波素子７を回路基板１と後述する蓋体６とで気密に封止する機能、高周波素子７や回路基板１の信号配線導体へのノイズ等の侵入を阻止するシールドの機能、および後述する同軸コネクタを保持する機能を有する。また、上面側の開口の大きさは、第一の回路基板１Ａと略同等であり、Ｆｅ−Ｎｉ−Ｃｏ合金やＣｕ−Ｗ合金等のインゴットに圧延加工や打ち抜き加工等の従来周知の金属加工法を施すことによって所定の形状に製作される。さらに、その表面に耐蝕性に優れかつろう材との濡れ性に優れる金属、具体的には厚さ0.5〜９μｍのＮｉ層と厚さ0.5〜９μｍのＡｕ層を順次めっき法により被着させておくと、金属枠体２の酸化腐食するのを有効に防止することができるとともに、回路基板１とろう材などを介して強固に接合させることができる。従って、所定の形状に製作された金属基体１の表面に0.5〜９μｍのＮｉ層および0.5〜９μｍのＡｕ層の金属層をめっき法により被着させておくことが好ましい。
【００２５】
そして、本発明の高周波素子収納用パッケージにおいては、金属枠体２は第二の回路基板１ｂの側面と対向する部位の内周面が突出した突出部２ｂを有しており、この突出部２ｂの上面と第一の回路基板１ａの下面に形成された接地導体１ｃとが導電性接合材９を介して接合している。また、このことが重要である。
【００２６】
突出部２ｂは、金属枠体２と第一の回路基板１ａの下面の外周側に露出した接地導体１ｃとを導電性接合材９を介して接合する際に、広い接合面積を供給する作用をなし、厚みは第二の回路基板１ｂの厚みと略同等であり、突出寸法は0.5〜５ｍｍである。
【００２７】
なお、金属枠体２と第一の回路基板１ａの下面に形成された接地導体１ｃとを接合する導電性接合材９は、半田等の低融点ろう材が用いられる。そして、金属枠体２の突出部２ｂの上面に、例えば半田ペーストをディスペンサを用いて塗布するとともに、回路基板１を第一の回路基板１ａの下面に形成された接地導体１ｃと金属枠体２の突出部２ｂの上面とが重なるように金属枠体２内部の所定位置に挿入し、しかる後、半田の融点以上の温度で加熱することにより、回路基板１と金属枠体２とが強固に接合される。
【００２８】
また、回路基板１と金属枠体２との接合をより強固とするとともに、パッケージの気密封止性を高めるために、第二の回路基板１ｂの側面を金属枠体２の突出部２ｂの内周側の表面とを図示しない導電性接合材で接合してもよい。
【００２９】
また、金属枠体２の貫通孔２ａには、同軸コネクタ３が嵌着されている。
同軸コネクタ３は、Ｆｅ−Ｎｉ−Ｃｏ合金やＣｕ−Ｗ合金等の金属材料から成る外周導体３ａと、その中心軸に配置された、外周導体３ａと同様な材料から成る中心導体３ｃと、それらの間に介在させた、硼珪酸ガラス等の誘電体材料から成る絶縁体３ｂとから成り、金属枠体２の貫通孔２ａ内周面にＡｕ−Ｓｎ合金半田等のろう材により嵌着されているとともに、中心導体３ｃが回路基板１表面に形成された信号配線導体と電気的に接続されている。なお、同軸コネクタ３は、外部電気回路（図示せず）と高周波素子７とを電気的に接続する機能を有するとともに高周波素子収納用パッケージ内部を塞ぐ機能を有し、高周波信号が伝送される中心導体３ｃと外周導体３ａとが、高周波信号伝送時のインピーダンスの整合が可能な同軸構造を成している。
【００３０】
なお、回路基板１表面に形成する、同軸コネクタ３の中心導体３ｃと接続する信号配線導体は、同軸コネクタ３の中心導体３ｃのインピーダンスと同じになるようにマイクロストリップ線路としておくことが好ましい。また、金属枠体２は、回路基板１との接合における熱歪みを小さくし接合を強固なものとするとともに、パッケージ外部との電磁的遮蔽を行なうために、回路基板１を構成するセラミックスの熱膨張係数に近似するＦｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金等の金属材料を用いるのがよい。
【００３１】
また、中心導体３ｃは、金属枠体２の内側に位置する部位の上下方向の厚みを、絶縁体３ｂ内部に位置する部位の上下方向における厚みの10〜50％とすることが好ましい。金属枠体２の内側に位置する部位の上下方向における厚みを絶縁体３ｂ内部に位置する部位の上下方向における厚みの10〜50％とすることにより、高周波信号の伝送時に信号配線導体に発生する電界の大きさが、従来の高周波素子収納用パッケージのようにの中心導体３ｃが絶縁体３ｂの内部から金属枠体２の内側にかけてそのままの厚みで突出した場合に発生する電界の大きさよりも、中心導体３ｃの金属枠体２の内側に位置する幅狭部で発生する電界の大きさに近くなり、信号配線導体と中心導体３ｃとの間の電界の変化が緩やかなものとなってインピーダンスの急激な変化を抑えることができ、インピーダンスの変化により発生する高周波信号の反射損失をより小さくできる。
【００３２】
なお、このような中心導体３ｃの上下方向における厚みの薄い部位は、その伝送方向に垂直な方向の断面形状が平板状あるいは半円状・略半円状となっている。また、中心導体３ｃの上下方向における厚みの薄い部位の厚みは、その厚みが薄いほどマイクロストリップ線路とのインピーダンス整合がとれて良好な伝送特性が得られるが、絶縁体３ｂ内部に位置する部位の中心導体３ｃの厚みの10％未満では、製造・成形が困難となり、また強度が低下して破損し易くなる傾向があり、50％を超えると、高周波信号の反射損失の低下が見られなくなる傾向がある。
【００３３】
また、中心導体３ｃの回路基板１の信号配線導体と接合する部位の長さは、0.1〜0.5ｍｍが好ましい。0.1ｍｍ未満では、接合長および接合面積が小さくなりすぎて、信号配線導体にＳｎ−Ａｕ半田などの低融点ろう材で強固に接合することが困難となり、電気特性面での信頼性が得られなくなる傾向がある。また、0.5ｍｍを超える場合、信号配線導体から成るマイクロストリップ線路との接合部が長すぎてインピーダンス整合がとり難くなり、高周波信号の反射損失が大きくなる傾向がある。
【００３４】
さらに、中心導体３ｃの回路基板１の信号配線導体と接合する部位の幅は、信号配線導体から成るマイクロストリップ線路の信号ライン幅より狭いことが好ましい。中心導体３ｃの回路基板１の信号配線導体と接合する部位の幅がマイクロストリップ線路の信号ライン幅より広い場合、マイクロストリップ線路とのインピーダンス整合がとれず高周波信号の反射損失が増大する傾向にある。
【００３５】
また、中心導体３ｃの上下方向における厚みの薄い部分は、その厚みが金属枠体２の内側に向かって先細りした形とされているのがよく、その先端の厚みが、中心導体３ｃと信号配線導体とがＳｎ−Ｐｂ半田等の低融点ろう材で強固に接合できる程度の厚みであれば良い。この場合、中心導体３ｃの厚みが金属枠体２内面から急激に細くされている場合に比較して、インピーダンスの変化がより緩やかなものとなり、反射損失をより小さくすることができる。
【００３６】
なお、中心導体３ｃの方向と回路基板１表面に形成された信号配線導体の方向とがなす角度は、０〜90°の範囲であれば良く、この範囲を外れる場合、高周波信号の反射損失が非常に大きくなる傾向がある。
【００３７】
なお、金属枠体２、同軸コネクタ３の外周導体３ａおよび中心導体３ｃとは熱膨張係数を整合させるという観点からは、同一の金属材料で形成することが好ましい。
【００３８】
また、蓋体６は、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属材料や酸化アルミニウム質焼結体等のセラミックスから成るとともに、金属枠体２の上面にＡｕ−Ｓｎ合金半田等の低融点ろう材を介して接合されたり、ＹＡＧレーザ溶接等の溶接により接合され、高周波素子７をパッケージ内部に封止する機能を有する。
【００３９】
蓋体６は、パッケージを電磁的にシールドするという観点からはＦｅ−Ｎｉ−Ｃｏ合金等の金属材料から成ることが好ましく、例えば蓋体６がＦｅ−Ｎｉ−Ｃｏ合金から成る場合は、Ｆｅ−Ｎｉ−Ｃｏ合金のインゴットに圧延加工や打ち抜き加工等の従来周知の金属加工法を施すことによって所定の形状に製作される。蓋体６の縦・横の長さは金属枠体２外周の縦・横の長さと略同一であり、厚みは必要とされる強度等により適宜決められる。
【００４０】
このような蓋体６は、例えば蓋体２がＦｅ−Ｎｉ−Ｃｏ合金から成る場合は、金属枠体２の上面にＡｕ−Ｓｎ合金半田等の低融点ろう材を介して接合される。
【００４１】
かくして本発明の高周波素子収納用パッケージによれば、回路基板１の搭載部Ｓに高周波素子７をＳｎ−Ｐｂ半田等の低融点ろう材を介して接着固定するとともに、回路基板１の搭載部Ｓ近傍に位置する配線導体層１ｂに高周波素子７の各電極をボンディングワイヤ７等を介して電気的に接続し、次に、回路基板１と金属枠体２とを導電性接合材８を介して接合し、さらに金属枠体２の貫通孔２ａに同軸コネクタ２を嵌着するとともに中心導体３ｃを回路基板１表面に形成された信号配線導体からなるマイクロストリップ線路にＳｎ−Ａｕ半田などの低融点ろう材で接合し、さらに蓋体６でパッケージ内部を気密に封止することにより高周波装置となる。
【００４２】
本発明の高周波素子収納用パッケージによれば、伝送される高周波信号の周波数が高くなっても同軸コネクタ３と高周波素子７との間のインピーダンスの急激な変化を抑えることが可能となり、その結果、このインピーダンスの変化により発生する反射損失を非常に小さなものとすることができ、高周波伝送特性の向上が可能となる。
【００４３】
なお、本発明の高周波素子収納用パッケージにおいては、高周波信号の周波数は１〜100ＧＨｚ程度であり、特に30ＧＨｚ以上の高い周波数において従来インピーダンスの変化が急激であったのを、本発明では緩やかなものとすることができる。
【００４４】
なお、本発明は上述の実施の形態の一例に限定されず、本発明の要旨を逸脱しない範囲内において種々の変更を行なうことは何等支障ない。例えば、回路基板１と金属枠体２とが一体的に形成されたもの、例えばメタル・インジェクション・モールド（ＭＩＭ）法等によって作製されたものであっても良い。
【００４５】
【発明の効果】
本発明の高周波素子収納用パッケージによれば、回路基板が上面側に位置する第一の回路基板と、下面側に位置し、第一の回路基板の下面に第一の回路基板の接地導体の一部が露出するように、側面が第一の回路基板の側面より内側に位置する第二の回路基板とから成り、金属枠体が第二の回路基板の側面と対向する部位の内周面が突出した突出部を有しており、この突出部の上面が第一の回路基板の下面に露出した接地導体と導電性接合材を介して接合されていることから、金属枠体と接地導体との接合が金属枠体の突出部の上面と第一の回路基板の下面に露出した接地導体との導電性接合材を介しての広い面積での接合となり、半田等の粘度が高い導電性接合材を用いて両者を接合した際に導電性接合材にボイドなどの隙間が発生したとしても、金属枠体と回路基板の接地導体との電気的接続が不安定となることはなく、その結果、高周波領域において共振が発生し反射損失が増大してしまい、高周波素子の高周波特性が劣化してしまうということはない。
【図面の簡単な説明】
【図１】本発明の高周波素子収納用パッケージの実施の形態の一例を示す断面図である。
【図２】従来の高周波素子収納用パッケージの断面図である。
【符号の説明】
１・・・・・・・・・回路基板
１Ａ・・・・・・・・第一の回路基板
１Ｂ・・・・・・・・第二の回路基板
１ａ・・・・・・・・絶縁層
１ｂ・・・・・・・・配線導体層
１ｃ・・・・・・・・接地導体
２・・・・・・・・・金属枠体
２ａ・・・・・・・・貫通孔
２ｂ・・・・・・・・突出部
３・・・・・・・・・同軸コネクタ
３ａ・・・・・・・・外周導体
３ｂ・・・・・・・・絶縁体
３ｃ・・・・・・・・中心導体
６・・・・・・・・・蓋体
７・・・・・・・・・高周波素子
８・・・・・・・・・導電性接合材
Ｓ・・・・・・・・・搭載部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a high-frequency element storage package for storing various semiconductor elements operating in a high frequency band, which are used in the fields of optical communication, microwave communication, millimeter wave communication, and the like.
[0002]
[Prior art]
FIG. 2 shows a cross-sectional view of a high-frequency element storage package for storing various semiconductor elements operating at a high frequency, which is used in conventional optical communication, microwave communication, millimeter wave communication, and the like.
As shown in FIG. 2, the conventional high-frequency element storage package mainly includes a circuit board 101, a metal frame 102, a coaxial connector (also referred to as a glass bead terminal) 103, and a lid 106. .
[0003]
The circuit board 101 is formed by alternately laminating a plurality of insulating layers 101a and wiring conductor layers 101b made of ceramics, and the ground conductor 101c constituting the wiring conductor layer 101b is exposed on the side surface. The wiring conductor layer 101b includes at least a ground conductor 101c, and is usually composed of a signal wiring conductor, a power supply conductor, and a ground conductor 101c. The signal wiring conductor has a function of transmitting a high-frequency signal to the high-frequency element 107, the power supply conductor has a function of supplying a power supply voltage to the high-frequency element 107, and the ground conductor 101c prevents noise and the like from entering the high-frequency element 107 and the signal wiring conductor. Has the function of shielding to block. In addition, the circuit board 101 has a mounting portion S on which an Si-based material such as SiGe or a compound-based high-frequency element 107 such as GaAs or InP is mounted. Note that the signal wiring conductors, power supply conductors, and ground conductors 101c positioned above and below are electrically connected by a through conductor (not shown) formed in the insulating layer 101a.
[0004]
The metal frame 102 is made of a metal material such as an Fe—Ni—Co alloy, and surrounds the mounting portion S on the side surface of the circuit board 101 and is electrically connected to the ground conductor 101c exposed on the side surface. It is attached via a conductive bonding material 108 such as a brazing material or a resin, and a through hole 102a is formed in the side portion.
[0005]
Further, the coaxial connector 103 includes an outer peripheral conductor 103a made of a metal material such as an Fe—Ni—Co alloy, a central conductor 103c made of a metal material such as an Fe—Ni—Co alloy, and the like. And an insulator 103b made of a dielectric material such as borosilicate glass, and is fitted on the inner peripheral surface of the through hole 102a of the metal frame 102 by a brazing material such as Au—Sn alloy solder. In addition, the central conductor 103c is electrically connected to the signal wiring conductor formed on the surface of the circuit board 101. The coaxial connector 103 has a function of electrically connecting an external electric circuit (not shown) and the high-frequency element 107 and a function of closing the inside of the high-frequency element storage package, and a center through which a high-frequency signal is transmitted. The conductor 103c and the outer peripheral conductor 103a form a coaxial structure capable of matching impedance during high-frequency signal transmission.
[0006]
Such a high-frequency element storage package fixes the high-frequency element 107 to the mounting portion S of the circuit board 101 with an adhesive such as resin or brazing material, and wire-bonds each electrode of the high-frequency element 107 to the wiring conductor layer 101b. Electrical connection using a connecting means such as 110, and then a lid 106 made of, for example, a metal material is joined to the upper surface of the metal frame 102 by seam welding, brazing, etc. Become.
[0007]
The high-frequency device transmits a low-frequency signal supplied from the outside to the high-frequency element 107 via a solder ball 104 formed on the lower surface of the circuit board 101, and performs time multiplexing (TDM) in the high-frequency element 107. By outputting the high-frequency signal from the coaxial connector, it can function as a transmission conversion device capable of transmitting a large amount of information at high speed.
[0008]
[Problems to be solved by the invention]
However, in the above-described high-frequency element storage package, the outer peripheral conductor 103a of the coaxial connector 103 and the metal frame 102 are firmly joined to each other through a brazing material such as solder in a wide area, but the metal frame 102 And the ground conductor 101c of the circuit board 101 are joined in a small area between the metal frame 102 and the portion exposed to the side surface of the circuit board 101 in the ground conductor 101c having a thickness of about several μm, and solder Since the conductive bonding material 108 made of brazing filler metal has a high viscosity, when there is a gap such as a void in the conductive bonding material 108 that connects the two, the metal frame 102 and the ground conductor 101c of the circuit board 101 As a result, the shield function that prevents intrusion of noise and the like into the signal wiring conductor is reduced, resulting in resonance in the high frequency region, increasing reflection loss, and deteriorating the high frequency characteristics of the high frequency device. do it Had a problem that the Mau.
[0009]
The present invention has been completed in view of the above problems, and its purpose is that the electrical connection between the metal frame and the ground conductor of the circuit board is stable, resonance occurs in the high frequency region, and reflection loss increases. It is an object of the present invention to provide a high-frequency element storage package having no high frequency characteristics.
[0010]
[Means for Solving the Problems]
A package for housing a high-frequency element according to the present invention includes a circuit board having a mounting portion on which a high-frequency element is mounted on an upper surface, wherein a plurality of wiring conductor layers including an insulating layer and at least a ground conductor are alternately stacked. A high-frequency element storage package comprising a metal frame that surrounds the mounting portion and is electrically connected to the ground conductor on a side surface of the circuit board. A first circuit board that is positioned, and a side surface of the first circuit board that is located on a lower surface side, such that a part of the ground conductor of the first circuit board is exposed on a lower surface of the first circuit board. A second circuit board located on the inner side of the side surface of the board, and the metal frame has a protruding portion projecting from an inner peripheral surface of a portion facing the side surface of the second circuit board, The upper surface of the protrusion is the first circuit board. It is characterized in that the are joined through the ground conductor is exposed and the conductive bonding material on the underside.
[0011]
According to the high-frequency element storage package of the present invention, the circuit board is located on the upper surface side, the lower surface side, and the ground conductor of the first circuit board is placed on the lower surface of the first circuit board. The inner peripheral surface of the part where the metal frame body is opposed to the side surface of the second circuit board, the side surface of which is located on the inner side of the side surface of the first circuit board so that a part is exposed Has a protruding portion, and the upper surface of the protruding portion is bonded to the ground conductor exposed on the lower surface of the first circuit board via a conductive bonding material. Is bonded to a wide area through a conductive bonding material between the upper surface of the protruding portion of the metal frame and the ground conductor exposed on the lower surface of the first circuit board, and the conductivity of the solder or the like is high. When gaps such as voids occurred in the conductive bonding material when both were bonded using the bonding material However, the electrical connection between the metal frame and the ground conductor of the circuit board does not become unstable. As a result, resonance occurs in the high frequency region and reflection loss increases, and the high frequency characteristics of the high frequency element are reduced. There is no deterioration.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Next, the high-frequency element storage package of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing an example of an embodiment of a high-frequency element storage package according to the present invention.
[0013]
In this figure, 1 is a circuit board on which high-frequency elements are mounted, 2 is a metal frame, 3 is a coaxial connector which is an input / output terminal for high-frequency signals, and 4 is a wiring conductor layer and a through conductor (not shown) of the circuit board. A ball portion of BGA (Ball Grid Array) that is electrically connected, 6 is a lid, and 7 is a high-frequency device such as a Si semiconductor such as SiGe or a compound semiconductor device such as GaAs or InP. The high-frequency element storage package of the present invention includes a circuit board 1 and a metal frame 2, and a coaxial connector 3, a ball portion 4, a lid 6, and the like are added as necessary.
[0014]
The circuit board 1 is used in optical communication, microwave communication, millimeter wave communication, and the like, and supports a high-frequency element 7 such as various semiconductor elements that operate at a high frequency, and heat generated by the high-frequency element 7 externally. It has a mounting portion S for mounting the high-frequency element 7 at the center of the upper surface.
[0015]
Such a circuit board 1 is formed by alternately laminating a plurality of insulating layers 1a and wiring conductor layers 1b.
The insulating layer 1a is made of an organic insulating material such as an epoxy resin, or an inorganic insulating material such as ceramics such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, or a silicon carbide sintered body. From the viewpoint of heat dissipation, it is preferably made of an inorganic insulating material such as ceramics. If the insulating layer 1a is made of, for example, an aluminum oxide sintered body, an appropriate organic binder, solvent, plasticizer, dispersant, etc. are added to the raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc. Mixing to make mud, and using this well-known doctor blade method and calendar roll method and other sheet forming methods to form a sheet to obtain a ceramic green sheet (ceramic raw sheet), These ceramic green sheets are manufactured by applying appropriate punching processes, laminating a plurality of them, and firing them at a high temperature of about 1600 ° C.
[0016]
Further, the wiring conductor layer 1b includes at least a ground conductor 1c, and is usually composed of a signal wiring conductor, a power supply conductor, and a ground conductor 1c. The signal wiring conductor has a function of transmitting a high-frequency signal to the high-frequency element 7, the power supply conductor has a function of supplying a power supply voltage to the high-frequency element 7, and the ground conductor 1 c prevents noise and the like from entering the high-frequency element 7 and the signal wiring conductor. Has the function of shielding to block. Note that the signal wiring conductor, the power supply conductor, and the ground conductor 1c that are positioned above and below are electrically connected to each other through through conductors (not shown) formed in each insulating layer 1a. Each electrode of the high-frequency element 7 is formed on the lower surface of the circuit board 1 by electrically connecting each electrode of the high-frequency element 7 to the wiring conductor layer 1b located in the vicinity of the portion S via the bonding wire 10 or the like. It is electrically connected to a ball portion 4 made of a conductive member such as solder described later.
[0017]
The high frequency element 7 is bonded and fixed to the mounting portion S of the circuit board 1 via a low melting point brazing material such as Sn-Pb solder, so that the heat generated by the high frequency element 7 can be efficiently transmitted to the outside via the low melting point brazing material. It can dissipate well, and the operability of the high-frequency element 7 can be made better.
[0018]
In the case where the insulating layer 1a is made of, for example, an aluminum oxide sintered body, such a wiring conductor layer 1b is made of a suitable organic solvent, solvent, plasticizer, etc., for refractory metal powders such as tungsten, molybdenum, and manganese. The metal paste obtained by adding and mixing is preliminarily printed and applied to the ceramic green sheet to be the insulating layer 1a using a conventionally known thick film technique such as screen printing, and is fired simultaneously with the ceramic green sheet. Thus, a predetermined pattern is deposited on a desired portion of the insulating layer 1a.
[0019]
In the high-frequency device storage package of the present invention, the circuit board 1 is positioned on the upper surface side and the first circuit board 1A is positioned on the lower surface side, and the first circuit board 1A is positioned on the lower surface of the first circuit board 1A. This is important because the side surface is composed of the second circuit board 1B located inside the side surface of the first circuit board 1A so that a part of the ground conductor 1c is exposed.
[0020]
According to the high-frequency element storage package of the present invention, the circuit board 1 is positioned on the upper surface side, and the first circuit board 1A is positioned on the lower surface side. Since the side surface is composed of the second circuit board 1B located inside the side surface of the first circuit board 1A so that a part of the ground conductor 1c is exposed, the ground conductor 1c of the circuit board 1 is formed. And a metal frame 2 to be described later through a conductive bonding material 9 is electrically connected to the ground conductor 1c formed on the upper surface of the protruding portion 2b of the metal frame 2 and the lower surface of the first circuit board 1A. It becomes possible to make a bonding in a wide area through the bonding material 9, and when the both are bonded using the conductive bonding material 9 having a high viscosity such as solder, a gap such as a void is formed in the conductive bonding material 9. Even if it occurs, the electricity between the metal frame 2 and the ground conductor 1c of the circuit board 1 Connection never becomes unstable, resulting, will be resonant in a high frequency region is generated reflection loss increases, no that the high frequency characteristics of the high-frequency element 7 is deteriorated.
[0021]
The first circuit board 1A and the second circuit board 1B are each composed of one or more insulating layers 1a and wiring conductor layers 1b, and the number of layers is the density of the wiring conductor layer 1b and the size of the product. It is determined as appropriate.
[0022]
Further, when the side surface of the second circuit board 1B is located on the inner side more than 5 mm from the side surface of the first circuit board 1A, the insulation projecting outward from the second circuit board 1B on the outer periphery of the first circuit board 1A. There is a tendency that the layer 1a is likely to be cracked or chipped, and when positioned on the inner side of less than 0.5 mm, the ground formed on the upper surface of the protruding portion 2b of the metal frame 2 and the lower surface of the first circuit board 1A The joining of the metal frame 2 and the first circuit board 1A through the conductive bonding material 9 to the conductor 1c is performed through a small area, and the conductive bonding material 9 having high viscosity such as solder is used. If a gap such as a void occurs in the conductive bonding material 9 when both are bonded, the electrical connection between the metal frame 2 and the ground conductor 1c of the circuit board 1 becomes unstable, and resonance occurs in a high frequency region. The reflection loss increases, and the high frequency of the high frequency element 7 There is a tendency that sex is deteriorated.
[0023]
The metal frame 2 is made of a metal material such as an Fe—Ni—Co alloy or a Cu—W alloy, and is attached to the side surface of the circuit board 1 so as to surround the mounting portion S. Moreover, the through-hole 2a is formed in the side part.
[0024]
The metal frame 2 has a function of hermetically sealing the high-frequency element 7 mounted on the circuit board 1 with the circuit board 1 and a lid body 6 which will be described later, noise to the signal wiring conductor of the high-frequency element 7 and the circuit board 1, etc. Has a function of a shield for preventing the intrusion of the wire and a function of holding a coaxial connector to be described later. Further, the size of the opening on the upper surface side is substantially the same as that of the first circuit board 1A, and conventionally known metal processing such as rolling or punching into an ingot such as an Fe-Ni-Co alloy or Cu-W alloy. It is manufactured in a predetermined shape by applying the method. Further, a metal having excellent corrosion resistance and wettability with the brazing material, specifically, a Ni layer having a thickness of 0.5 to 9 μm and an Au layer having a thickness of 0.5 to 9 μm are sequentially deposited on the surface by a plating method. In this case, it is possible to effectively prevent the metal frame 2 from being oxidatively corroded, and to firmly bond the circuit board 1 to the circuit board 1 via the brazing material. Therefore, it is preferable to deposit a metal layer of a 0.5 to 9 μm Ni layer and a 0.5 to 9 μm Au layer on the surface of the metal substrate 1 manufactured in a predetermined shape by a plating method.
[0025]
And in the high frequency element storage package of this invention, the metal frame 2 has the protrusion part 2b which the internal peripheral surface of the site | part facing the side surface of the 2nd circuit board 1b protruded, This protrusion part 2b And the ground conductor 1c formed on the lower surface of the first circuit board 1a are joined via a conductive joining material 9. This is also important.
[0026]
The protruding portion 2b has a function of supplying a wide bonding area when the metal frame 2 and the ground conductor 1c exposed on the outer peripheral side of the lower surface of the first circuit board 1a are bonded through the conductive bonding material 9. None, the thickness is substantially the same as the thickness of the second circuit board 1b, and the protruding dimension is 0.5 to 5 mm.
[0027]
The conductive bonding material 9 for bonding the metal frame 2 and the ground conductor 1c formed on the lower surface of the first circuit board 1a is a low melting point brazing material such as solder. Then, for example, solder paste is applied to the upper surface of the protruding portion 2b of the metal frame 2 using a dispenser, and the circuit board 1 is connected to the ground conductor 1c formed on the lower surface of the first circuit board 1a and the metal frame 2. Is inserted into a predetermined position inside the metal frame 2 so that the upper surface of the protruding portion 2b overlaps, and then heated at a temperature equal to or higher than the melting point of the solder, whereby the circuit board 1 and the metal frame 2 are firmly fixed. Be joined.
[0028]
Further, in order to further strengthen the bonding between the circuit board 1 and the metal frame 2 and to improve the hermetic sealing performance of the package, the side surface of the second circuit board 1b is placed inside the protruding portion 2b of the metal frame 2. The peripheral surface may be joined with a conductive joining material (not shown).
[0029]
A coaxial connector 3 is fitted into the through hole 2 a of the metal frame 2.
The coaxial connector 3 includes an outer conductor 3a made of a metal material such as an Fe-Ni-Co alloy or a Cu-W alloy, a center conductor 3c made of the same material as the outer conductor 3a disposed on the center axis thereof, And an insulator 3b made of a dielectric material such as borosilicate glass, and is fitted on the inner peripheral surface of the through hole 2a of the metal frame 2 with a brazing material such as Au—Sn alloy solder. The central conductor 3c is electrically connected to the signal wiring conductor formed on the surface of the circuit board 1. The coaxial connector 3 has a function of electrically connecting an external electric circuit (not shown) and the high-frequency element 7 and a function of closing the inside of the high-frequency element storage package, and is a center through which a high-frequency signal is transmitted. The conductor 3c and the outer peripheral conductor 3a form a coaxial structure capable of matching impedance during high-frequency signal transmission.
[0030]
The signal wiring conductor formed on the surface of the circuit board 1 and connected to the central conductor 3c of the coaxial connector 3 is preferably a microstrip line so as to have the same impedance as that of the central conductor 3c of the coaxial connector 3. In addition, the metal frame 2 reduces the thermal distortion in joining to the circuit board 1 and strengthens the joining, and also heats the ceramics constituting the circuit board 1 to electromagnetically shield the outside of the package. It is preferable to use a metal material such as an Fe—Ni—Co alloy or an Fe—Ni alloy that approximates an expansion coefficient.
[0031]
Moreover, it is preferable that the center conductor 3c sets the thickness of the site | part located inside the metal frame 2 to 10-50% of the thickness of the site | part located inside the insulator 3b in the up-down direction. The thickness in the vertical direction of the portion located inside the metal frame 2 is set to 10 to 50% of the thickness in the vertical direction of the portion located inside the insulator 3b, so that it is generated in the signal wiring conductor during transmission of the high frequency signal. The magnitude of the electric field is larger than the magnitude of the electric field generated when the central conductor 3c as in the conventional high-frequency element storage package protrudes from the inside of the insulator 3b to the inside of the metal frame 2 with the same thickness. It becomes close to the magnitude of the electric field generated in the narrow portion located inside the metal frame 2 of the center conductor 3c, and the change in the electric field between the signal wiring conductor and the center conductor 3c becomes gradual and the impedance is reduced. An abrupt change can be suppressed, and a reflection loss of a high-frequency signal generated due to an impedance change can be further reduced.
[0032]
Note that the thin portion in the vertical direction of the center conductor 3c has a cross-sectional shape in a direction perpendicular to the transmission direction that is flat, semicircular, or substantially semicircular. Further, the thickness of the thin portion in the vertical direction of the center conductor 3c is such that as the thickness is thin, impedance matching with the microstrip line can be obtained and good transmission characteristics can be obtained. However, the portion of the portion located inside the insulator 3b is obtained. If the thickness of the central conductor 3c is less than 10%, it is difficult to manufacture and mold, and the strength tends to be reduced and breakage tends to occur. If the thickness exceeds 50%, the reflection loss of high-frequency signals tends not to decrease. There is.
[0033]
The length of the portion of the central conductor 3c that joins the signal wiring conductor of the circuit board 1 is preferably 0.1 to 0.5 mm. If it is less than 0.1 mm, the joining length and the joining area become too small, and it becomes difficult to firmly join the signal wiring conductor with a low melting point brazing material such as Sn—Au solder, and reliability in terms of electrical characteristics is obtained. There is a tendency to disappear. On the other hand, when the thickness exceeds 0.5 mm, the junction with the microstrip line made of the signal wiring conductor is too long, making it difficult to match the impedance, and the reflection loss of the high-frequency signal tends to increase.
[0034]
Furthermore, it is preferable that the width of the portion of the central conductor 3c that joins the signal wiring conductor of the circuit board 1 is narrower than the signal line width of the microstrip line made of the signal wiring conductor. If the width of the portion of the central conductor 3c that joins the signal wiring conductor of the circuit board 1 is wider than the signal line width of the microstrip line, impedance matching with the microstrip line cannot be achieved and the reflection loss of the high-frequency signal tends to increase. .
[0035]
Further, the thin portion in the vertical direction of the center conductor 3c is preferably tapered toward the inside of the metal frame 2, and the thickness of the tip thereof is the center conductor 3c and the signal wiring. It is sufficient that the conductor has a thickness that can be firmly joined with a low melting point brazing material such as Sn—Pb solder. In this case, compared to the case where the thickness of the center conductor 3c is sharply reduced from the inner surface of the metal frame 2, the change in impedance becomes more gradual, and the reflection loss can be further reduced.
[0036]
The angle formed between the direction of the center conductor 3c and the direction of the signal wiring conductor formed on the surface of the circuit board 1 may be in the range of 0 to 90 °. There is a tendency to become very large.
[0037]
The metal frame 2, the outer peripheral conductor 3a and the central conductor 3c of the coaxial connector 3 are preferably formed of the same metal material from the viewpoint of matching the thermal expansion coefficients.
[0038]
The lid 6 is made of a metal material such as an Fe-Ni-Co alloy or a ceramic such as an aluminum oxide sintered body, and a low melting point brazing material such as Au-Sn alloy solder on the upper surface of the metal frame 2. The high-frequency element 7 is sealed inside the package by being joined by welding such as YAG laser welding.
[0039]
The lid body 6 is preferably made of a metal material such as an Fe—Ni—Co alloy from the viewpoint of electromagnetically shielding the package. For example, when the lid body 6 is made of an Fe—Ni—Co alloy, the Fe— The Ni-Co alloy ingot is manufactured into a predetermined shape by applying a conventionally known metal working method such as rolling or punching. The vertical and horizontal lengths of the lid 6 are substantially the same as the vertical and horizontal lengths of the outer periphery of the metal frame 2, and the thickness is appropriately determined depending on the required strength and the like.
[0040]
For example, when the lid 2 is made of an Fe—Ni—Co alloy, such a lid 6 is joined to the upper surface of the metal frame 2 via a low melting point brazing material such as Au—Sn alloy solder.
[0041]
Thus, according to the high frequency device storage package of the present invention, the high frequency device 7 is bonded and fixed to the mounting portion S of the circuit board 1 via the low melting point brazing material such as Sn-Pb solder, and the mounting portion S of the circuit board 1 is also fixed. Each electrode of the high-frequency element 7 is electrically connected to the wiring conductor layer 1b located in the vicinity via the bonding wire 7 or the like, and then the circuit board 1 and the metal frame 2 are connected via the conductive bonding material 8. Further, the coaxial connector 2 is fitted into the through-hole 2a of the metal frame 2, and the center conductor 3c is connected to the microstrip line made of the signal wiring conductor formed on the surface of the circuit board 1 with a low melting point such as Sn-Au solder. A high frequency device is obtained by bonding with a brazing material and hermetically sealing the inside of the package with a lid 6.
[0042]
According to the high frequency device storage package of the present invention, it is possible to suppress a rapid change in impedance between the coaxial connector 3 and the high frequency device 7 even when the frequency of the transmitted high frequency signal is high. The reflection loss caused by this impedance change can be made extremely small, and the high-frequency transmission characteristics can be improved.
[0043]
In the high-frequency element storage package of the present invention, the frequency of the high-frequency signal is about 1 to 100 GHz, and in particular, the conventional impedance change is abrupt at a high frequency of 30 GHz or higher. It can be.
[0044]
In addition, this invention is not limited to an example of the above-mentioned embodiment, It does not interfere at all in making various changes within the range which does not deviate from the summary of this invention. For example, the circuit board 1 and the metal frame 2 may be integrally formed, for example, manufactured by a metal injection mold (MIM) method or the like.
[0045]
【The invention's effect】
According to the high-frequency element storage package of the present invention, the circuit board is located on the upper surface side, the lower surface side, and the ground conductor of the first circuit board is placed on the lower surface of the first circuit board. The inner peripheral surface of the part where the metal frame body is opposed to the side surface of the second circuit board, the side surface of which is located on the inner side of the side surface of the first circuit board so that a part is exposed Has a protruding portion, and the upper surface of the protruding portion is bonded to the ground conductor exposed on the lower surface of the first circuit board via a conductive bonding material. Is bonded to a wide area through a conductive bonding material between the upper surface of the protruding portion of the metal frame and the ground conductor exposed on the lower surface of the first circuit board, and the conductivity of the solder or the like is high. When gaps such as voids occurred in the conductive bonding material when both were bonded using the bonding material However, the electrical connection between the metal frame and the ground conductor of the circuit board does not become unstable. As a result, resonance occurs in the high frequency region and reflection loss increases, and the high frequency characteristics of the high frequency element are reduced. There is no deterioration.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an example of an embodiment of a high-frequency element storage package according to the present invention.
FIG. 2 is a cross-sectional view of a conventional high-frequency element storage package.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Circuit board 1A ... 1st circuit board 1B ... 2nd circuit board 1a ... Insulation Layer 1b ... Wiring conductor layer 1c ... Grounding conductor 2 ... Metal frame 2a ... Through hole 2b .... Projection 3 ... Coaxial connector 3a ... Outer conductor 3b ... Insulator 3c ... .... Center conductor 6 ... Lid 7 ... High frequency element 8 ... Conductive bonding material S ... ..Mounting part

Claims

Insulating layers and wiring conductor layers including at least a ground conductor are alternately laminated in plural layers, and a circuit board having a mounting part on which a high-frequency element is mounted on an upper surface and surrounding the mounting part on a side surface of the circuit board In the high-frequency element housing package comprising a metal frame attached to be electrically connected to the ground conductor, the circuit board includes a first circuit board located on the upper surface side, and a lower surface The second side surface is located on the inner side of the side surface of the first circuit board so that a part of the ground conductor of the first circuit board is exposed on the lower surface of the first circuit board. The metal frame body has a protruding portion protruding from the inner peripheral surface of the portion facing the side surface of the second circuit substrate, and the upper surface of the protruding portion is the first circuit. The ground conductor exposed on the bottom surface of the substrate High frequency device package for housing, characterized in that it is bonded through sexual bonding material.