JP3981645B2 - I / O terminal and semiconductor element storage package and semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an input / output terminal, a semiconductor element storage package, and a semiconductor device used in a signal input / output section of a semiconductor element storage package for storing a semiconductor element that operates with a high-frequency signal.
[0002]
[Prior art]
Conventionally, a semiconductor element storage package (hereinafter also referred to as a package) for storing a semiconductor element using a high frequency signal such as a microwave band or a millimeter wave band is electrically connected to an external electric circuit board. Input / output terminals are provided. This input / output terminal is shown in a perspective view in FIG.
[0003]
In the figure, reference numeral 101 denotes a rectangular flat plate portion made of a dielectric such as alumina (Al ₂ O ₃ ) ceramic, aluminum nitride (AlN) ceramic, mullite (3Al ₂ O ₃ · 2SiO ₂ ) ceramic, The flat plate portion 101 is formed on the upper surface thereof with a line conductor 103 made of a metallized layer such as tungsten (W) and molybdenum (Mo) formed from one side to the opposite side, and on both sides of the line conductor 103 at equal intervals. And the same grounded conductor 104 made of a metallized layer such as W or Mo. Further, a lower ground conductor 102 made of a metallized layer similar to the line conductor 103 is provided on the entire lower surface of the flat plate portion 101.
[0004]
Al ₂ O ₃ ceramics, AlN ceramics, 3Al ₂ O ₃ .2SiO, which is joined to the upper surface of the flat plate portion 101 with a part of the line conductor 103 interposed therebetween and has an upper ground conductor 106 on the upper surface. _A rectangular parallelepiped standing wall portion 105 made of a dielectric material such as _two- quality ceramics is provided. Thereby, the line conductor 103 has a microstrip line in a portion not sandwiched between the flat plate portion 101 and the standing wall portion 105, and a strip line in a portion sandwiched between the flat plate portion 101 and the standing wall portion 105. It will be a thing. Further, a side ground conductor 107 made of a metallized layer similar to the line conductor 103 is formed on the side surface parallel to the line direction of the line conductor 103 of the flat plate portion 101 and the standing wall portion 105.
[0005]
Further, the same plane ground conductor 104 is formed on both sides of the line conductor 103 at equal intervals, and according to the frequency of the high frequency signal transmitted through the line conductor 103, between the line conductor 103 and the same plane ground conductor 104. By appropriately adjusting the interval, the line conductor 103 can be matched with the characteristic impedance. Thus, by matching the line conductor 103 to the characteristic impedance, the transmission efficiency of the high-frequency signal transmitted through the line conductor 103 can be improved.
[0006]
Such an input / output terminal 109 composed of the flat plate portion 101 and the standing wall portion 105 is provided in the package, and can seal the inside and outside of the package in an airtight manner (for example, the following patents) Reference 1).
[0007]
The package to which the input / output terminal 109 is attached is a so-called one in which the input / output terminal 109 is fitted into a mounting portion including a notch or a through hole provided in a metal frame that is one of the constituent members. There are a metal wall type and a so-called ceramic wall type in which an input / output terminal portion as a signal transmission line is integrally provided on a ceramic frame body, which is appropriately selected and used depending on the application.
[0008]
[Patent Document 1]
Japanese Patent Laid-Open No. 2002-184888
[Problems to be solved by the invention]
However, in the conventional input / output terminal 109, when a bonding wire, a lead terminal, or the like is connected to one end or the other end of the flat plate portion 101 of the line conductor 103, the inductance component increases at the connecting portion, and the connection There is a problem that transmission loss such as reflection loss and transmission loss occurs in the high-frequency signal transmitted through the section, and the transmission efficiency of the high-frequency signal tends to be lowered. This problem is likely to occur as the high-frequency signal transmitted through the line conductor 103 becomes higher in frequency. In particular, when the high-frequency signal transmitted through the line conductor 103 is 10 GHz or more, the above-described problem becomes significant.
[0010]
Further, when the high-frequency signal transmitted through the line conductor 103 becomes a high-frequency signal, the grounding property with respect to the line conductor 103 is deteriorated, and transmission loss such as transmission loss is likely to occur in the high-frequency signal transmitted through the line conductor 103. It has occurred.
[0011]
Accordingly, the present invention has been completed in view of the above problems, and its purpose is to provide a high-frequency signal reflection loss at a line conductor in an input / output terminal for transmitting a high-frequency signal to a semiconductor element housed in a package. By suppressing the occurrence of transmission loss such as transmission loss, the transmission efficiency of high-frequency signals between the semiconductor element and the external electric circuit board is improved, and the semiconductor element housed in the package operates normally and stably over a long period of time. It is to be able to be made.
[0012]
[Means for Solving the Problems]
The input / output terminal of the present invention has a line conductor formed on the upper surface from one side to the opposite other side, a ground conductor on the same plane formed at equal intervals on both sides of the line conductor, and a lower ground conductor on the lower surface. A rectangular flat plate portion made of a dielectric material, and joined to the upper surface of the flat plate portion with a part of the line conductor and a part of the same-surface ground conductor in between, and an upper ground conductor is formed on the upper surface In the input / output terminal having a rectangular parallelepiped standing wall portion made of a dielectric, the flat plate portion is formed with a notch extending between upper and lower surfaces at a corner portion, and the same-surface ground conductor and the inner surface of the notch A conductive layer electrically connected to the lower ground conductor is formed.
[0013]
In the input / output terminal of the present invention, a notch extending between the upper and lower surfaces is formed at the corner of the flat plate portion, and a conductor layer electrically connected to the same-surface ground conductor and the lower ground conductor is formed on the inner surface of the notch. Therefore, the capacitance component at the end of the line conductor can be increased by bringing the conductor layer closer to the line conductor at the end of the line conductor to which the bonding wire, the lead terminal, etc. are connected. Inductance components that increase due to the connection of lead terminals or the like can be canceled out by increasing the capacitance components. Therefore, even when a bonding wire, a lead terminal or the like is connected to the end portion of the line conductor, it is possible to match the characteristic impedance.
[0014]
In addition, a conductor layer having a larger area is brought close to the line conductor, and the same-surface ground conductor and lower ground conductor are electrically connected via the conductor layer in the vicinity of the end portion of the line conductor to Since the same-surface ground conductor and the lower ground conductor in the vicinity of the end have the same potential, the ground potential can be further strengthened.
[0015]
As a result, reflection loss and transmission loss of the high-frequency signal transmitted through the line conductor can be more effectively suppressed, and the high-frequency signal can be input / output extremely efficiently.
[0016]
A package for housing a semiconductor element according to the present invention includes a base having a mounting portion on which a semiconductor element is mounted on an upper surface, and is attached so as to surround the mounting portion on the upper surface of the base. Or it has the frame in which the attachment part of the input / output terminal which consists of a notch part was formed, and the input / output terminal of Claim 1 fitted by the said attachment part.
[0017]
With the above-described configuration, the semiconductor element storage package of the present invention can improve the transmission efficiency of the high-frequency signal transmitted through the line conductor, and the semiconductor element is hermetically sealed to keep the semiconductor element normal and stable over a long period of time. Airtight reliability that can be operated in a highly reliable manner.
[0018]
The semiconductor device according to the present invention includes a semiconductor element storage package having the above-described configuration, a semiconductor element mounted and fixed on the mounting portion and electrically connected to the input / output terminal, and an upper surface of the frame. And a covered lid.
[0019]
With the above-described configuration, the semiconductor device of the present invention has excellent high-frequency signal transmission characteristics using the semiconductor element storage package of the present invention.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
The input / output terminals, semiconductor element storage package, and semiconductor device of the present invention will be described in detail below. FIG. 1 is a perspective view showing an example of an embodiment of an input / output terminal according to the present invention. In this figure, 1 is a flat plate portion, 2 is a lower ground conductor, 3 is a line conductor, 4 is a ground conductor on the same plane, 5 is a standing wall portion, 6 is an upper ground conductor, 8 is a notch, and 9 is an input / output terminal. .
[0021]
The input / output terminal 9 according to the present invention has a line conductor 3 formed on the upper surface from one side to the opposite other side, and a coplanar ground conductor 4 formed at equal intervals on both sides of the line conductor 3, and on the lower surface. A rectangular flat plate portion 1 made of a dielectric material having a lower ground conductor 2 is joined to the upper surface of the flat plate portion 1 with a part of the line conductor 3 and a part of the same-surface ground conductor 4 in between. And a rectangular parallelepiped standing wall portion 5 having a dielectric on which an upper ground conductor 6 is formed.
[0022]
Flat plate part 1 is one _Al 2 _{O 3} quality ceramic, AlN _ceramics, square consisting of 3Al ₂ O 3 · 2SiO dielectric such as ₂ quality ceramics.
[0023]
The line conductor 3 and the flush ground conductor 4 are made of a metallized layer such as W or Mo formed on the upper surface of the flat plate portion 1.
[0024]
Upright wall 5, _Al 2 _{O 3} quality ceramic, AlN ceramics _are those rectangular solid made of dielectric material such as 3Al ₂ O 3 · 2SiO ₂ Quality ceramics, the upper surface of the flat plate portion 1, line conductor 3 between In addition, the same-surface ground conductor 4 is partly joined.
[0025]
The lower surface of the flat plate portion 1 and the upper surface of the standing wall portion 5 have a lower ground conductor 2 and an upper ground conductor 6 made of a metallized layer similar to the line conductor 3 on the entire surface. Further, a side surface ground conductor 7 made of a metallized layer similar to the line conductor 3 is formed on the side surface of the flat plate portion 1 and the side surface of the standing wall portion 5. The lower ground conductor 2, the upper ground conductor 6, the side surface ground conductor 7, and the same-surface ground conductor 4 enhance grounding to the line conductor 3, and the line conductor 3 has excellent transmission efficiency of high-frequency signals.
[0026]
Further, the flat plate portion 1 has a notch 8 formed between the upper and lower surfaces at a corner portion, and a conductor layer 8 a electrically connected to the same-surface ground conductor 4 and the lower ground conductor 2 on the inner surface of the notch 8. Is formed.
[0027]
As a result, the capacitance component at the end of the line conductor 3 is increased by bringing the conductor layer 8a closer to the line conductor 3 at the end of the line conductor 3 to which a bonding wire, a lead terminal or the like (not shown) is connected. Inductance components that increase due to bonding wires, lead terminals, and the like being connected can be canceled out by increasing the capacitance components. Therefore, even when a bonding wire, a lead terminal, or the like is connected to the end of the line conductor 3, it can be matched with the characteristic impedance.
[0028]
In addition, the conductor layer 8a having a larger area is brought close to the line conductor 3, and the same-surface ground conductor 4 and the lower ground conductor 2 are electrically connected via the conductor layer 8a in the vicinity of the end portion of the line conductor 3. Since the same surface ground conductor 4 and the lower ground conductor 2 in the vicinity of the end of the line conductor 3 are connected to have the same potential, the ground potential can be further strengthened.
[0029]
As a result, the reflection loss and transmission loss of the high-frequency signal transmitted through the line conductor 3 can be more effectively suppressed, and the high-frequency signal can be input / output extremely efficiently.
[0030]
Further, as shown in the enlarged plan view of the main part of the notch 8 in the input / output terminal 9 of FIG. 2, the cross-sectional shape of the notch 8 is an arc shape as shown in FIG. 2A, as shown in FIG. Various shapes such as a straight line are used. In particular, it is preferable to use a notch that is in the shape of an arc as shown in FIG. Thereby, the impedance of the line conductor 3 can be gradually changed, and it is possible to effectively suppress a transmission loss caused by a sudden impedance change. Furthermore, it is possible to suppress the occurrence of stress in the notch 8 and to effectively prevent breakage such as cracks in the notch 8.
[0031]
Further, the conductor layer 8 a is preferably formed on the entire inner surface of the notch 8. Thereby, the conductor layer 8a having a larger area can be brought close to the line conductor 3, and the ground potential at the end of the line conductor 3 can be further strengthened.
[0032]
Further, the notches 8 are preferably formed on both sides of the line conductor 3 with the line conductor 3 interposed therebetween, and more preferably are formed at all four corners of the flat plate portion 1. Thereby, the effect which suppresses the reflection loss and transmission loss of the high frequency signal which transmits the line conductor 3 can be improved more, and a high frequency signal can be input / output very efficiently.
[0033]
Such an input / output terminal 9 is manufactured as follows. For example, in the case of comprising Al ₂ O ₃ ceramics, first, organic binders, plasticizers and solvents suitable for raw material powders such as Al ₂ O ₃ , silicon oxide (SiO ₂ ), magnesium oxide (MgO) and calcium oxide (CaO). Etc. are added and mixed to form a slurry. A plurality of ceramic green sheets are obtained from this by a tape forming technique such as a doctor blade method or a calender roll method.
[0034]
Next, a metal paste obtained by adding and mixing an appropriate organic binder, plasticizer, solvent, etc. to a high melting point metal powder such as W, Mo, etc. to this ceramic green sheet is obtained by a thick film forming technique such as a screen printing method. The metallized layer which becomes the lower ground conductor 2, the line conductor 3, the same surface ground conductor 4, and the upper ground conductor 6 is formed in a predetermined pattern by printing and coating. Further, by punching the ceramic green sheet to be the flat plate portion 1 with a die or the like, a notch 8 is formed at a desired position, and the inner surface of the notch 8 is made of W, Mo or the like that becomes the conductor layer 8a. A metal paste obtained by adding and mixing a suitable organic binder, plasticizer, solvent, etc. to the high melting point metal powder is applied.
[0035]
Thereafter, a plurality of ceramic green sheets are laminated, and a metal paste obtained by adding and mixing an appropriate organic binder, plasticizer, solvent, and the like to refractory metal powders such as W and Mo to be the side ground conductor 7 is applied. And it is manufactured by baking at a temperature of about 1600 ° C. in a reducing atmosphere.
[0036]
Next, the package of this invention is demonstrated based on FIG. 3, FIG. FIG. 3 is a plan view showing an embodiment of the package of the present invention, FIG. 4 is a cross-sectional view of FIG. 3, 21 is a base, 22 is a frame, and 23 is a mounting portion.
[0037]
The package of the present invention has a base 21 having a mounting portion 21a on which the semiconductor element 25 is mounted on the upper surface, and is mounted on the upper surface of the base 21 so as to surround the mounting portion 21a. Alternatively, it includes a frame 22 in which a mounting portion 23 of the input / output terminal 9 composed of a notch is formed, and the input / output terminal 9 fitted in the mounting portion 23.
[0038]
Thereby, the transmission efficiency of the high-frequency signal transmitted through the line conductor 3 can be improved, and the semiconductor element 25 can be hermetically sealed so that the semiconductor element 25 can be operated normally and stably over a long period of time. It becomes a high quality thing.
[0039]
The base 21 has a mounting portion 21a for mounting a semiconductor element 25 such as an IC, LSI, semiconductor laser (LD), or photodiode (PD) on the upper surface.
[0040]
The substrate 21 is made of metal such as iron (Fe) -nickel (Ni) -cobalt (Co) alloy, Cu-W alloy, Al ₂ O ₃ ceramics, AlN ceramics, 3Al ₂ O ₃ .2SiO ₂ ceramics. Etc. are made of a dielectric material. When the base 21 is made of metal, the ingot is manufactured into a predetermined shape by applying a conventionally well-known metal processing method such as rolling or punching. On the other hand, when the substrate 21 is made of ceramic, an appropriate organic binder or solvent is added to the raw material powder to form a paste, and this paste is formed into a ceramic green sheet by a doctor blade method, a calender roll method, etc. Thereafter, an appropriate punching process is performed on the ceramic green sheet, and a plurality of these are laminated and fired at a high temperature of about 1600 ° C.
[0041]
When the substrate 21 is made of metal, the surface thereof has excellent corrosion resistance and wettability with the brazing material, specifically, a Ni layer having a thickness of 0.5 to 9 μm and a gold having a thickness of 0.5 to 5 μm ( The Au) layer is preferably deposited sequentially by a plating method. Thus, the base 21 can be effectively prevented from being oxidized and corroded, and the semiconductor element 25 can be firmly bonded and fixed to the mounting portion 21a on the top surface of the base 21. On the other hand, when the substrate 21 is made of ceramic, a metallized layer such as W or Mo is formed on the mounting portion 21a as an underlayer, and this surface has excellent corrosion resistance and wettability with a brazing material. Specifically, it is preferable that a Ni layer having a thickness of 0.5 to 9 μm and an Au layer having a thickness of 0.5 to 5 μm are sequentially deposited by a plating method. Thereby, the semiconductor element 25 can be firmly bonded and fixed to the mounting portion 21a.
[0042]
The frame 22 is joined to the base 21 by a high melting point metal brazing material such as Ag brazing or Ag—Cu brazing so as to surround the mounting portion 21 a. Consists of. In addition, a mounting portion 23 of the input / output terminal 9 including a through hole or a notch is formed on a side portion of the frame body 22.
[0043]
When the frame body 22 and the base body 21 are made of a dielectric, the attachment portion 23 has a conductive layer such as a metallized layer formed on the inner surface. This conductive layer is connected to the ground conductor formed on the base body 21 and the frame body 22, and is grounded.
[0044]
The input / output terminal 9 of the present invention is fitted and joined to the mounting portion 23 with a high melting point metal brazing material such as an Ag brazing material or an Ag-Cu brazing material. The lower ground conductor 2, the upper ground conductor 6, and the side ground conductor 7 of the input / output terminal 9 are connected to a conductive layer formed on the inner surface of the mounting portion 23 when the frame body 22 and the base body 21 are made of a dielectric. Is grounded to form a case ground. Alternatively, when the frame body 22 and the base body 21 are made of metal, the lower ground conductor 2, the upper ground conductor 6 and the side ground conductor 7 of the input / output terminal 9 are connected to the metal frame body 22 or the base body 21 and grounded. It becomes a case ground. The upper ground conductor 6 of the input / output terminal 9 is grounded by being connected to a seal ring (not shown) made of a metal such as an Fe—Ni—Co alloy attached to the upper surface of the frame body 22. It may be.
[0045]
Such a package according to the present invention includes the input / output terminal 9 according to the present invention, so that the transmission loss of the high-frequency signal is reduced by minimizing the dielectric loss of the high-frequency signal, and the good transmission characteristics. It will have.
[0046]
Then, the line conductor 3 is connected to the electrode of the semiconductor element 25 placed on the placement portion 21a and the wiring conductor of the external electric circuit board via bonding wires, ribbons, lead terminals, etc. (not shown), and the semiconductor The element 25 and the external electric circuit board are electrically connected. Next, a lid 26 made of Fe-Ni-Co alloy or the like is attached to the upper surface of the frame 22 by soldering or welding such as a seam weld method, so that the semiconductor element 25 is housed in the package. It becomes this semiconductor device.
[0047]
3 and 4, the two input / output terminals 9 are provided on the opposite side of the frame body 22, but may be provided on the other side as required. A plurality of input / output terminals 9 may be attached to the side, and in this case, a plurality of attachments 23 may be provided on one side and a plurality of input / output terminals 9 may be attached in parallel.
[0048]
Since the semiconductor device according to the present invention includes the input / output terminal 9 according to the present invention, the dielectric loss of the high-frequency signal is minimized, the transmission loss of the high-frequency signal is reduced, and the transmission efficiency is improved. It can be held well.
[0049]
【The invention's effect】
In the input / output terminal of the present invention, a notch extending between the upper and lower surfaces is formed at the corner of the flat plate portion, and a conductor layer electrically connected to the same-surface ground conductor and the lower ground conductor is formed on the inner surface of the notch. Therefore, the capacitance component at the end of the line conductor can be increased by bringing the conductor layer closer to the line conductor at the end of the line conductor to which the bonding wire, the lead terminal, etc. are connected. Inductance components that increase due to the connection of lead terminals or the like can be canceled out by increasing the capacitance components. Therefore, even when a bonding wire, a lead terminal or the like is connected to the end portion of the line conductor, it is possible to match the characteristic impedance.
[0050]
In addition, a conductor layer having a larger area is brought close to the line conductor, and the same-surface ground conductor and lower ground conductor are electrically connected via the conductor layer in the vicinity of the end portion of the line conductor to Since the same-surface ground conductor and the lower ground conductor in the vicinity of the end have the same potential, the ground potential can be further strengthened.
[0051]
As a result, reflection loss and transmission loss of the high-frequency signal transmitted through the line conductor can be more effectively suppressed, and the high-frequency signal can be input / output extremely efficiently.
[0052]
The package for housing a semiconductor element of the present invention has a base having a mounting portion on which the semiconductor element is mounted on the upper surface, and is attached to the upper surface of the base so as to surround the mounting portion, Transmission of a high-frequency signal for transmitting a line conductor by including a frame in which an input / output terminal mounting portion formed of a notch is formed and an input / output terminal having the above-described configuration fitted to the mounting portion. The efficiency can be improved, and the semiconductor element can be hermetically sealed so that the semiconductor element can operate normally and stably over a long period of time.
[0053]
A semiconductor device according to the present invention includes a semiconductor element storage package having the above-described configuration, a semiconductor element mounted and fixed on the mounting portion and electrically connected to an input / output terminal, and attached to the upper surface of the frame. By including the lid, the high-frequency signal transmission property using the semiconductor element storage package of the present invention is excellent.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an example of an embodiment of an input / output terminal of the present invention.
2 is an enlarged plan view of a main part of a notch in the input / output terminal of FIG. 1;
FIG. 3 is a plan view showing an example of an embodiment of a package for housing a semiconductor element of the present invention.
4 is a cross-sectional view of the semiconductor element storage package of FIG. 3;
FIG. 5 is a perspective view of a conventional input / output terminal.
[Explanation of symbols]
1: Flat plate portion 2: Lower ground conductor 3: Line conductor 4: Coplanar ground conductor 5: Standing wall portion 6: Upper ground conductor 8: Notch 8a: Conductor layer 9: Input / output terminal
21: Base
21a: Placement section
22: Frame
23: Mounting part
25: Semiconductor element
26: Lid

Claims (3)

A rectangular conductor made of a dielectric having a line conductor formed from one side to the other side opposite to the upper surface, a ground conductor on the same surface formed at equal intervals on both sides of the line conductor, and a lower ground conductor on the lower surface A rectangular parallelepiped standing wall composed of a flat plate portion and a dielectric member that is joined to the upper surface of the flat plate portion with a part of the line conductor and a part of the ground conductor on the same plane sandwiched therebetween, and an upper ground conductor is formed on the upper surface In the input / output terminal provided with a portion, the flat plate portion is formed with a notch extending between upper and lower surfaces at a corner portion, and the notched inner surface and the lower ground conductor are electrically connected to the inner surface of the notch. An input / output terminal characterized in that a connected conductor layer is formed. A base having a mounting portion on which a semiconductor element is mounted on the upper surface, and an input / output terminal comprising a through hole or a notch on a side portion, which is attached to the upper surface of the base so as to surround the mounting portion. A package for housing a semiconductor element, comprising: a frame having a mounting portion; and the input / output terminal according to claim 1 fitted to the mounting portion. A package for housing a semiconductor element according to claim 2, a semiconductor element mounted on the mounting portion and electrically connected to the input / output terminal, and a lid attached to an upper surface of the frame body A semiconductor device comprising:

Images