JP4164011B2 - Semiconductor element storage package and semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor element housing package for housing a semiconductor element that operates with a high-frequency signal.

  2. Description of the Related Art Conventionally, a semiconductor element storage package (hereinafter also simply referred to as a package) for storing various semiconductor elements using high-frequency signals such as a microwave band and a millimeter wave band is used as a conductor pattern for electrically connecting the semiconductor elements. Line conductors are provided. A sectional view of such a package is shown in FIG. 3A, and a plan view is shown in FIG. In the figure, 31 is a base, 32 is a metal frame, 34 is a lid, and 36 is a circuit board.

The base 31 is a rectangular plate-shaped body made of a metal such as iron (Fe) -nickel (Ni) -cobalt (Co) alloy or copper (Cu) -tungsten (W), and is formed at the center of the upper main surface. A circuit board 36 on which a semiconductor element 35 such as an IC, LSI, semiconductor laser (LD), photodiode (PD) or the like is mounted is mounted. The circuit board 36 is made of ceramics such as alumina (Al ₂ O ₃ ) sintered body, aluminum nitride (AlN) sintered body, mullite (3Al ₂ O ₃ -2SiO ₂ ) sintered body, and the like. A mounting portion 31a for mounting the semiconductor element 35 is provided at the center.

  A ground conductor layer 36d is deposited on the lower surface of the circuit board 36, and the ground conductor layer 36d and the base 31 are firmly bonded by a brazing material such as silver (Ag) brazing, Ag-copper (Cu) brazing, or solder. Bonded and fixed.

  The semiconductor element 35 mounted on the mounting portion 31a of the circuit board 36 is bonded to the first line conductor 36a and the second line conductor 36b whose electrodes are attached to the circuit board 36, respectively. It is electrically connected via.

  Further, the second line conductor 36b and the ground conductor 36c are terminated and connected via a high resistance 38, and the ground conductor 36c is connected to the ground conductor layer 36d via a ground conductor 36e on the end face. By connecting the end of the second line conductor 36b to the ground conductor 36c via the high resistance 38 in this way, reflection of a high-frequency signal as a termination signal flowing through the second line conductor 36b is prevented, and the semiconductor element 35 prevents malfunctioning.

  A frame body 32 is erected on the outer peripheral portion of the upper main surface of the base body 31 so as to surround the circuit board 36. The frame body 32 forms a space for housing the semiconductor element 35 along with the base body 31. To do. The frame 32 is made of an Fe—Ni—Co alloy, a sintered material of Cu—W, or the like, similar to the base 31, and is formed integrally with the base 31, or is brazed to the base 31 such as Ag solder, Ag—Cu solder, or the like. It is erected on the outer peripheral portion of the upper main surface of the base 31 by being brazed through a material or joined by a welding method such as a seam welding method.

  A through hole 32a into which the glass beads 33 are fitted is formed on the side surface of the frame 32. The glass beads 33 are fitted into the through holes 32a and a sealing material such as solder is placed in the gaps in the through holes 32a. The glass beads 33 are inserted into the through holes 32a by heating and melting the sealing material and filling the melted sealing material into the gap between the glass beads 33 and the inner walls of the through holes 32a by capillary action. It is fitted and joined through a sealing material.

  A rod-shaped center conductor 33a made of a metal such as an Fe—Ni—Co alloy is fixed to the glass bead 33 as a signal line at the center axis portion. The center conductor 33a is electrically connected to the first line conductor 36a of the circuit board 36 through a conductive adhesive made of solder or the like. A coaxial cable (not shown) connected to an external electric circuit (not shown) is attached to the glass bead 33, so that the semiconductor element 35 housed therein can connect the central conductor 33a of the glass bead 33. Through the external electric circuit.

Finally, the semiconductor element 35 is accommodated inside the container composed of the base body 31 and the frame body 32, and the lid body 34 is joined to the upper surface of the frame body 32 by a welding method such as a brazing method or a seam weld method. By being sealed in, a semiconductor device as a product is obtained.
JP 1999-38372

  However, in the conventional semiconductor package, as the frequency of the semiconductor element 35 is increased, the resistance value of the high resistor 38 formed between the second line conductor 36b and the ground conductor 36c is increased. There has been a problem that noise is generated due to reflection of the high-frequency signal at the resistor 38, and the noise enters the semiconductor element 35, causing malfunction of the semiconductor element 35.

  In addition, in a high frequency signal such as a microwave band and a millimeter wave band, an impedance value viewed from the high resistance 38 due to a parasitic inductance component of the ground conductors 36c and 36e formed from the high resistance 38 to the ground conductor layer 36d. As a result, there has been a new problem that the high resistance 38 cannot obtain the desired termination characteristics.

  In addition, resonance has occurred on the second line conductor 36b due to the standing wave, and the desired termination characteristics cannot be obtained.

  The present invention has been completed in view of the above problems, and an object of the present invention is to provide a highly reliable semiconductor device capable of preventing a semiconductor component from malfunctioning due to a reflection component of a high-frequency signal entering the semiconductor device. An object is to provide a storage package and a semiconductor device using the same.

  A package for housing a semiconductor element according to the present invention includes a circuit board having a mounting portion for mounting a semiconductor element driven by a high-frequency signal on an upper main surface, and a base on which the circuit board is mounted at the center of the upper surface. And a frame joined to the outer peripheral portion of the upper surface of the base body so as to surround the circuit board, and on the upper main surface of the circuit board, from the peripheral portion of the mounting portion to the outer periphery. A line conductor formed toward the surface, a coplanar grounding conductor that surrounds both ends of the line conductor and the one end on the outer periphery side at a constant interval, and connected to both sides of the end portion on the outer periphery side of the line conductor, and The two other high-resistance elements that extend in an oblique direction symmetrical to the line direction of the line conductor and are connected to the same-surface ground conductor are formed, and the other end of the line conductor on the mounting portion side described above And a distance between the high-resistance element and the high-frequency signal Wherein the of less than half a wavelength.

  The semiconductor device of the present invention is attached to the upper surface of the frame body, the semiconductor element storage package having the above-described configuration, the semiconductor element mounted on the mounting portion and electrically connected to the line conductor. And a lid.

  According to the package for housing a semiconductor element of the present invention, the line conductor formed on the upper main surface of the circuit board from the periphery of the mounting part toward the outer periphery, both sides of the line conductor and one end of the circuit board on the outer periphery side. Connected to both sides of the same-surface grounding conductor that surrounds with a certain interval and one end of the circuit board outer peripheral side of the line conductor, and extends in an oblique direction symmetrical to the line direction of the line conductor and connected to the same-surface grounding conductor The two high resistance bodies are formed, and the distance between the other end of the line conductor on the placement portion side and the high resistance body is less than ½ of the wavelength of the high frequency signal. By connecting directly to the ground conductor with a short distance without wiring, the parasitic inductance component and the parasitic capacitance component from the high resistance body to the ground conductor can be reduced. Since these parasitic inductance components and parasitic capacitance components change the impedance value depending on the frequency, they can be connected to one end of the line conductor by reducing the parasitic inductance components and parasitic capacitance components from the high resistance to the ground conductor. As a result, the line conductor connected to the termination electrode of the semiconductor element can have stable termination characteristics up to the high frequency band. It becomes.

  Furthermore, since two high resistance bodies that extend in a diagonal direction symmetrical to the line direction of the line conductors and are connected to the same surface ground conductor are formed, each high resistance body is required. Since the range of variation in resistance value can be relaxed and the parasitic inductance component generated in the high-resistance element can be reduced, it is possible to obtain a termination resistor that can be used up to the high-frequency band for the line conductor. Further, since the high resistance body extends in an oblique direction with respect to the line direction of the line conductor, it becomes possible to smoothly transmit a high-frequency signal from the line conductor to the high resistance body. It is possible to effectively suppress the reflection of the high frequency signal at the boundary.

  Furthermore, since the distance between the other end of the line conductor on the mounting portion side and the high resistance is less than ½ of the wavelength of the high-frequency signal, the line conductor is prevented from causing a resonance phenomenon with respect to the high-frequency signal. Therefore, a resonance phenomenon does not occur at the use frequency, and good transmission characteristics can be obtained for a high-frequency signal at the use frequency.

  Therefore, the package for housing a semiconductor element of the present invention can prevent the occurrence of noise and resonance due to reflection of a high-frequency signal transmitted through the line conductor, and allow the semiconductor element to operate normally with the above configuration.

  Further, according to the semiconductor device of the present invention, the semiconductor element storage package having the above configuration, the semiconductor element mounted on the mounting portion and electrically connected to the line conductor, and attached to the upper surface of the frame body Therefore, it is possible to provide a semiconductor device with high transmission reliability that can prevent a reflection component of a high-frequency signal from entering a semiconductor element and causing the semiconductor element to malfunction. it can.

  The semiconductor element storage package of the present invention will be described in detail below. FIG. 1A is a cross-sectional view showing an example of an embodiment of a package for housing a semiconductor element of the present invention, and FIG. 1B is a plan view of FIG. In these drawings, 1 is a base, 2 is a frame, 4 is a lid, and 6 is a circuit board.

  The substrate 1 is a rectangular plate-like body made of a metal such as an Fe-Ni-Co alloy, a sintered material of Cu-W, or the like, and a conventionally well-known metal processing method such as rolling or punching on the ingot, or It is manufactured in a predetermined shape by performing injection molding and cutting. A circuit board 6 having a mounting portion 1a for mounting a semiconductor element 5 such as an IC, LSI, LD, or PD is mounted on the central portion of the upper main surface of the base 1.

The circuit board 6 is made of ceramics such as an Al ₂ O ₃ sintered body, an AlN sintered body, a 3Al ₂ O ₃ -2SiO ₂ sintered body, and the semiconductor element 5 at the center of the upper surface of the circuit board 6. Is placed. Also, a ground conductor layer 6d is formed on the lower surface of the circuit board 6, and the ground conductor layer 6d is made of a brazing material such as Ag brazing or Ag-Cu brazing or solder such as Au-Sn solder or Pb-Sn solder. And the mounting portion 1a are firmly bonded and fixed.

  The semiconductor element 5 is bonded to a line conductor 6a (hereinafter, referred to as a first line conductor) and a second line conductor 6b (hereinafter, referred to as a second line conductor), whose electrodes are deposited on the upper surface of the circuit board 6, respectively. They are electrically connected via wires 7a and 7b.

When the circuit board 6 is made of, for example, an Al ₂ O ₃ sintered material, the circuit board 6 is manufactured as follows. First, a suitable organic binder, plasticizer, dispersant, solvent, etc. are added to and mixed with raw material powders such as Al ₂ O ₃ , silicon oxide (SiO ₂ ), calcium oxide (CaO), magnesium oxide (MgO), etc. And A ceramic green sheet is obtained by making this into a sheet by a conventionally known doctor blade method. Thereafter, the ceramic green sheet is appropriately punched, or raw material powder such as Al ₂ O ₃ , SiO ₂ , CaO, MgO is filled into a mold and press-molded to form a predetermined shape. . The ceramic green sheet becomes the first line conductor 6a, the second line conductor 6b on the upper surface of the circuit board 6, the same surface ground conductor 6c, the ground conductor 6e on the end surface of the circuit board 6, and the ground conductor layer 6d on the lower surface of the circuit board 6. It is manufactured by printing and applying a metal paste and firing at a temperature of about 1600 ° C. in a reducing atmosphere.

  The metal paste used for the first line conductor 6a, the second line conductor 6b, the same-surface ground conductor 6c, the ground conductor 6e on the end face, and the ground conductor layer 6d is made of a material such as W, molybdenum (Mo), manganese (Mn), etc. A paste made by adding a suitable organic binder or solvent to the melting point metal powder and then printing is applied to a ceramic green sheet or ceramic body by printing using a well-known screen printing method. .

The first line conductor 6a, the second line conductor 6b, the same-surface ground conductor 6c, the ground conductor 6e on the end surface, and the ground conductor layer 6d may be formed by a thin film forming method. The line conductor 6a, the second line conductor 6b, the coplanar ground conductor 6c, the ground conductor 6e on the end face, and the ground conductor layer 6d are tantalum nitride (Ta ₂ N), nichrome (Ni—Cr alloy), titanium (Ti), It is made of palladium (Pd), platinum (Pt), Au or the like, and is formed by a well-known thin film forming method after firing the ceramic green sheet.

  Further, a frame body 2 is joined to the outer peripheral portion of the upper main surface of the base body 1 so as to surround the circuit board 6, and the frame body 2 and the base body 1 are provided with the semiconductor element 5 inside thereof. Forms a space to accommodate. The frame 2 is made of a Fe—Ni—Co alloy, a Cu—W sintered material, or the like, similar to the base 1, and is integrally formed with the base 1 or via a brazing material such as Ag brazing. By being brazed or joined by a welding method such as a seam welding method, the base body 1 is erected on the outer peripheral portion of the upper main surface.

  The frame 2 may be made of the above metal or a dielectric material such as ceramics. When the frame 2 is made of ceramics, it is preferable that a conductor layer such as a metallized layer is formed on the surface thereof. When the frame body 2 is formed in this manner, even radiation noise generated by the internal semiconductor element 5 can be effectively grounded, and the operation of the semiconductor element 5 can be stabilized.

  Further, as an input / output terminal for inputting a drive signal or the like to the semiconductor element 5 from the outside, for example, glass beads 3 are used and installed in the frame body 2 as follows. First, a through-hole 2a into which the glass beads 3 are fitted is formed on the side surface of the frame body 2, and the glass beads 3 are fitted into the through-holes 2a and a sealing material such as Au-Sn solder or Pb-Sn solder is used. It inserts in the clearance gap with the through-hole 2a. After that, the sealing material is melted by heating, and the molten sealing material is filled in the gap between the glass beads 3 and the inner walls of the through holes 2a by capillary action, so that the glass beads 3 are soldered into the through holes 2a. It is fitted and joined via a sealing material such as.

  The glass bead 3 is for electrically connecting the semiconductor element 5 accommodated therein to a coaxial cable connected to an external electric circuit, and has a cylindrical shape such as a cylindrical shape made of a metal such as an Fe—Ni—Co alloy. An outer conductor is filled with an insulator such as glass, and a central conductor 3a made of a metal such as an Fe-Ni-Co alloy is fixed to the central axis. One end portion of the center conductor 3a located inside the package is electrically connected to the first line conductor 6a of the circuit board 6 through a conductive adhesive made of solder or the like. A coaxial cable connected to an external electric circuit is attached to the other end portion of the center conductor 3a located outside the package. Then, the electrode of the semiconductor element 5 and the first line conductor 6a formed on the upper surface of the circuit board 6 are electrically connected by the bonding wire 7a, so that the semiconductor element 5 housed in the package is glass. The beads 3 are electrically connected to the external electric circuit via the center conductor 3a.

  FIG. 2 is an enlarged plan view of a main part of the circuit board 6 in the package of the present invention. According to the example shown in FIG. 2, the second line conductor 6 b formed on the upper main surface of the circuit board 6 is electrically connected to the semiconductor element 5 at the other end on the mounting portion 1 a side. Two high resistance bodies 8 are connected to the same plane ground conductor 6c so that both sides of one end on the outer peripheral side of the circuit board 6 extend obliquely symmetrically with respect to the line direction of the second line conductor 6b. It is connected. The distance between the other end of the second line conductor 6b on the mounting portion 1a side and the high resistor 8 is less than ½ of the wavelength λ of the high frequency signal.

  The same-surface ground conductor 6c surrounds both sides of the second line conductor 6b and one end on the outer peripheral side of the circuit board 6 with a constant interval, and is preferably provided up to the outer peripheral part on the upper surface of the circuit board 6. By forming the same-surface ground conductor 6c in this way, the ground potential of the second line conductor 6b can be strengthened, and the high resistor 8 can be directly connected at a short distance without being routed by the same-surface ground conductor 6c. The parasitic inductance component and the parasitic capacitance component from the high resistance body 8 to the same plane grounding conductor 6c can be reduced, and as a result, the high level connected to the other end side of the second line conductor 6b. Since the fluctuation of the impedance value of the second line conductor 6b viewed from the resistor 8 can be reduced, it is possible to obtain good termination characteristics up to the high frequency band for the second line conductor 6b.

  In addition, since the distance between the other end of the second line conductor 6b on the mounting portion 1a side and the high resistance 8 is less than ½ of the wavelength of the high-frequency signal, one end of the second line conductor 6b Since the resonance phenomenon that occurs in the length up to the connection portion with the high-resistance body 8 can be shifted to a higher frequency side than the use frequency, the resonance phenomenon does not occur at the use frequency, and the high-frequency signal at the use frequency does not occur. In contrast, it is possible to obtain good transmission characteristics.

  Furthermore, since the two high resistance bodies 8 extending in the oblique direction symmetrical to the line direction of the second line conductor 6b and connected to the same plane ground conductor 6c are formed, the high resistance body 8 is formed. Are connected in parallel to the second line conductor 6b, so that the resistance value required per one of the high resistance bodies 8 can be set larger than the desired resistance value. For this reason, the tolerance range of the resistance value required per one high-resistance element 8 can be relaxed, and the manufacturing yield can be improved. Further, since the parasitic inductance component of the high-resistance element 8 is also connected in parallel to the second line conductor 6b, the parasitic inductance component can be reduced, and the second line conductor 6b can be further reduced in the high frequency band. It is possible to obtain termination characteristics that can be used up to. Moreover, since the high resistance body 8 extends in an oblique direction with respect to the line direction of the second line conductor 6b, it is possible to smoothly transmit a high-frequency signal from the second line conductor 6b to the high resistance body 8. Thus, reflection of a high frequency signal at the boundary between the second line conductor 6b and the high resistance body 8 can be effectively suppressed.

Such a high resistance body 8 is made of a material such as Ta ₂ N, Ni—Cr alloy, and is formed by being printed and applied to the circuit board 6 and then baked or formed by a thin film forming method. Moreover, the termination resistance value by the high resistance body 8 is set by appropriately setting the thickness, width, and shape of the high resistance body 8 according to the frequency of the transmitted high frequency signal and the characteristic impedance of the second line conductor 6b. Set to desired value. For example, in order to finely adjust the resistance value, a part of the high resistance body 8 can be removed by laser processing, and the resistance value can be adjusted with high accuracy.

  The high resistance body 8 is preferably connected so as to cover one end (tip) from both sides of one end portion of the second line conductor 6b on the outer peripheral side of the circuit board 6. Preferably, as shown in FIG. 2, the one end of the second line conductor 6b on the outer peripheral side of the circuit board 6 is gradually tapered toward the tip. Thereby, a high frequency signal can be smoothly transmitted from the 2nd line conductor 6b to the high resistance body 8, and reflection of a high frequency signal can be suppressed more effectively.

  Moreover, the high resistance body 8 is good to be a curve and a straight line which do not have a bending part. More preferably, it is a straight line. Thereby, it is possible to effectively prevent the reflection of the high frequency signal due to the bending. In addition, the width of the high resistance body 8 is preferably a constant width from the second line conductor 6b to the same plane ground conductor 6c from the viewpoint of smoothly transmitting a high-frequency signal and preventing reflection loss. For example, as shown in FIG. 2, the high resistor 8 is preferably formed in a square or rectangular shape.

  In addition, the angle formed by the line direction of the high-resistance element 8 and the line direction of the second line conductor 6b is preferably 20 to 70 degrees. More preferably, it is 40 to 50 degrees. If it is less than 20 degree | times, it will become easy to contact between the two high resistance bodies 8, and it will become difficult to obtain the thing of stable resistance value. On the other hand, when the angle exceeds 70 degrees, it is difficult to smoothly transmit a high frequency signal from the second line conductor 6b to the high resistance body 8, and reflection of the high frequency signal is likely to occur.

  Then, the semiconductor element 5 is placed and fixed on the circuit board 6 of the semiconductor element storage package of the present invention, and electrically connected to the first line conductor 6a and the second line conductor 6b via the bonding wires 7a and 7b. The semiconductor device of the present invention is obtained by connecting and bonding the lid 4 made of a metal such as Fe—Ni—Co alloy to the upper surface of the frame 2 by soldering, seam welding, or the like. According to the semiconductor device of the present invention, the semiconductor element 5 can be hermetically accommodated inside the container so that the semiconductor element 5 can be operated normally and stably over a long period of time. The base 1 is fixedly mounted on the external electric circuit board, By connecting the glass beads 3 and the coaxial cable connected to the external electric circuit, the semiconductor element 5 housed therein is electrically connected to the external electric circuit, and the semiconductor element 5 operates with a high-frequency signal. .

  The preferred frequency band of the high frequency signal in the semiconductor element housing package and the semiconductor device of the present invention is a microwave or millimeter wave band region, and the parasitic inductance value and the parasitic capacitance value in the high resistor 8 are appropriately adjusted and controlled. Thus, the resistance value of the high resistor 8 in the high frequency band can be adjusted to a desired value, so that the transmission characteristic of the high frequency signal in these frequency bands can be improved.

  The circuit board 6 may be divided into two or more circuit blocks, for example, a semiconductor element 5 such as an IC, an LSI, a semiconductor laser (LD), or a photodiode (PD). Each circuit block to which 5 is connected may have the configuration of the present invention.

  It should be noted that the present invention is not limited to the above embodiments, and various modifications may be made without departing from the scope of the present invention.

(A) is sectional drawing which shows an example of embodiment of the package for semiconductor element accommodation of this invention, (b) is a top view of the package for semiconductor element accommodation of (a). FIG. 2 is an enlarged plan view of a main part of a circuit board in the semiconductor element storage package of FIG. 1. (A) is sectional drawing of the conventional package for semiconductor element accommodation, (b) is a top view of the package for semiconductor element accommodation of (a).

Explanation of symbols

DESCRIPTION OF SYMBOLS 1: Base | substrate 1a: Mounting part 2: Frame body 2a: Through-hole 3: Glass bead 3a: Center conductor 4: Cover body 5: Semiconductor element 6: Circuit board 6a: 1st line conductor 6b: 2nd line conductor 6c: Ground conductor on the same surface 6d: Ground conductor layer 6e: Ground conductor on the end face 7a, 7b: Bonding wire 8: High resistance body

Claims (2)

A circuit board having a mounting portion for mounting a semiconductor element driven by a high-frequency signal on the upper main surface, a base on which the circuit board is mounted at the center of the upper surface, and an outer peripheral portion of the upper surface of the base A frame body joined so as to surround the circuit board, and on the upper main surface of the circuit board, a line conductor formed from the periphery of the mounting portion toward the outer periphery, It is connected to both sides of one end of the outer peripheral side of the line conductor and the same surface ground conductor that surrounds both ends of the line conductor and one end of the outer peripheral side with a constant interval, and is symmetrical with respect to the line direction of the line conductor Two high resistance bodies extending in an oblique direction and connected to the same surface ground conductor are formed, and the distance between the other end on the placement portion side of the line conductor and the high resistance body is It is less than half of the wavelength of the high frequency signal. Semiconductor device package for housing that. A package for housing a semiconductor element according to claim 1, a semiconductor element mounted on the mounting portion and electrically connected to the line conductor, and a lid attached to the upper surface of the frame body A semiconductor device comprising the semiconductor device.

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