JP3854095B2 - Multilayer circuit board - Google Patents

Multilayer circuit board Download PDF

Info

Publication number
JP3854095B2
JP3854095B2 JP2001163551A JP2001163551A JP3854095B2 JP 3854095 B2 JP3854095 B2 JP 3854095B2 JP 2001163551 A JP2001163551 A JP 2001163551A JP 2001163551 A JP2001163551 A JP 2001163551A JP 3854095 B2 JP3854095 B2 JP 3854095B2
Authority
JP
Japan
Prior art keywords
cavity
multilayer
circuit board
stepped portion
insulating lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001163551A
Other languages
Japanese (ja)
Other versions
JP2002359340A (en
Inventor
俊昭 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2001163551A priority Critical patent/JP3854095B2/en
Publication of JP2002359340A publication Critical patent/JP2002359340A/en
Application granted granted Critical
Publication of JP3854095B2 publication Critical patent/JP3854095B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance

Abstract

PROBLEM TO BE SOLVED: To provide a multilayer circuit board where the electric connection between an insulating cover and a multilayer board is stable and besides the downsizing is possible. SOLUTION: For this multilayer circuit board 10, a surface circuit pattern 62 is made on the insulating cover 6. Moreover, the surface wiring layer 2 of the multilayer board 1 and the surface circuit pattern 62 of the insulating cover 6 are electrically connected with each other by bonding wire 63 and a chip-form electronic part 70. Moreover, a step 7a is provided all around the inwall of a cavity 7. Then, the periphery of the rear of the insulating cover 6 and the step of the cavity 7 are joined with each other by seal member 64.

Description

【0001】
【発明の属する技術分野】
本発明は、多層基板に設けられた電子部品用キャビティを絶縁蓋体で覆った多層回路基板に関するものである。
【0002】
【従来の技術】
例えば、弾性表面波フィルタなどの電子部品素子やICチップをキャビティ内に収容した多層回路基板は、電子部品素子やICチップを塵や湿気等から保護するために、絶縁蓋体や金属蓋体によって封止していた。
【0003】
このような多層回路基板は、一般的に、多層基板の表面に開口を有するキャビティを設け、そのキャビティの底面に弾性表面波フィルタなどの電子部品素子やICチップを搭載し、多層基板のキャビティ開口周囲にIC、コンデンサ等の他の回路構成部品を実装する。そして、キャビティの開口には、絶縁蓋体や金属性蓋体を単に搭載していたため、多層基板の表面においてこの蓋体部分が表面配線層の配置にあたり制約されたり、また、回路構成部品のデッドスペースとなってしまう。
【0004】
このような問題を解決するために、図5、6に示すように、蓋体46に絶縁材料を用いて、この絶縁蓋体46上に表面回路パターン42を形成し、また、所定回路構成部品60を搭載していた(特許第2682477号公報)。尚、図において、1は多層基板であり、45は電子部品素子である。
【0005】
【発明が解決しようとする課題】
しかしながら、上記多層回路基板40によれば、絶縁蓋体46の裏面に、表面側の回路パターン42に接続する端子電極44を形成するとともに、キャビティ7の段差部7aに内部配線層4に接続されるパッド74を形成していた。そして、端子電極44とパッド74とを半田などを介して接続していた。
【0006】
このような構造では、両者の接続部分が、絶縁蓋体46の裏面部分となるため、接続状態を目視により確認することができず、接続信頼性が低かった。
また、上述の構造では、蓋体46の裏面側に端子電極44が形成されており、キャビティ7を気密的に封止することが非常に困難であった。
【0007】
本発明は、上記課題に鑑みて案出されたものであり、その目的は、キャビティの開口を封止する蓋体に形成した表面回路パターンと多層基板側の表面配線層との電気的な接続の接続状態が目視でき、かつ小型化が可能である多層回路基板を提供することにある。
また、別の目的は、さらに、キャビティ内に収容した電子部品素子やICチップを気密的に封止できる多層回路基板を提供することにある。
【0011】
【課題を解決するための手段】
本発明の多層配線基板は、表面に表面配線層を形成するとともに、表面に開口を有し、内壁に段差部を有する電子部品素子またはICチップが収容されるキャビティを形成した多層基板と、前記段差部に載置されキャビティの開口を封止する絶縁蓋体とからなる多層回路基板において、前記絶縁蓋体には、表面に表面回路パターンが形成され、端面に厚み方向に延びる凹部が形成されて該凹部の内壁面に端子電極が形成されているとともに、前記キャビティの段差部上には電極パッドが形成されており、前記端子電極と前記電極パッドとは半田または導電性樹脂ペーストで電気的に接続され、前記段差部は前記キャビティの内壁全周に周設されており、前記段差部上に前記絶縁蓋体の裏面外周部が低融点ガラスまたは熱硬化性接着剤で接合されることによって前記キャビティの開口が封止されていることを特徴とするものである
【0012】
また、本発明の多層配線基板は、上記構成において、前記キャビティの開口は、前記段差部上に形成した前記電極パッドの内側で封止されていることを特徴とするものである
【0013】
また、本発明の多層配線基板は、表面に表面配線層を形成するとともに、表面に開口を有し、内壁に段差部を有する電子部品素子またはICチップが収容されるキャビティを形成した多層基板と、前記段差部に載置されキャビティの開口を封止する絶縁蓋体とからなる多層回路基板において、前記絶縁蓋体には、表面に表面回路パターンが形成され、端面に厚み方向に延びる凹部が形成されて該凹部の内壁面に端子電極が形成されているとともに、前記キャビティの段差部上には電極パッドが形成されており、前記端子電極と前記電極パッドとは半田または導電性樹脂ペーストで電気的に接続され、前記段差部は前記キャビティの内壁全周に周設されており、前記段差部上に形成したグランド電位のシール導体膜と、前記絶縁蓋体の裏面全面に形成したシール導体膜と半田で接合されることによって前記キャビティの開口が封止されていることを特徴とするものである
【0014】
また、本発明の多層配線基板は、上記構成において、前記キャビティの開口は、前記段差部上に形成した前記電極パッドの内側で封止されていることを特徴とするものである
【0015】
【作用】
本発明において、多層基板の表面には、表面配線層が形成されており、絶縁蓋体の表面に、表面回路パターンが形成されている。従って、多層回路基板の表面の全体で所定回路を形成することができるため、表面配線及び回路構成部品などの高密度化が可能となり、小型化が可能となる。
【0016】
また、絶縁蓋体の表面回路パターンと多層基板の表面配線層との接続が、絶縁蓋体の表面側で行われるため、この電気的な接続状態が目視で確認することができ、接続信頼性が向上する。
【0017】
表面配線層と表面回路パターンとの接続を、チップ状部品の回路機能に接続することにより、所定回路を構成すると同時に、両者の接続を行うので、小型化、多機能化が可能となる。
【0018】
また、発明では、絶縁蓋体側の表面回路パターンは、絶縁蓋体の端面に引き出され、多層基板側の内部配線層から延び、かつ段差部上に形成されたパッドと接続される。この場合も、多層回路基板の表面側から、多層機はと絶縁蓋体との隙間から両者の接続状態が目視できるため、接続信頼性が向上する。
【0019】
【発明の実施の形態】
以下、本発明の多層回路基板を図面に基づいて詳説する。
【0020】
図1は本発明の参考例の多層回路基板の外観斜視図である。図2は図1の多層回路基板の断面図である。
【0021】
図において、多層基板1は、セラミック、ガラス−セラミック材料などの絶縁層1a〜1fが積層して構成され、絶縁層1a〜1fの各層間に、所定回路網を形成する内部配線層4が配置されている。この内部配線層4は、配線網以外に、所定機能、例えば容量成分を形成する対向電極であったり、インダクタンスを形成するコイルパターンであったり、さらにマイクロストリップ線路であったりする。また、絶縁層1a〜1fには、その層の厚み方向を貫くビアホール導体3が形成されている。
【0022】
さらに、多層基板1の表面には、表面配線層2が形成され、さらに、所定回路を構成する回路構成部品8が搭載されている。この表面配線層2、ビアホール導体3、内部配線層4はAg系(Ag単体、Ag−Pd、Ag−PtなどのAg合金)を主成分とする導体導体膜(導体)からなる。
【0023】
また、多層基板1には、表面開口を有するキャビティ7が形成されている。キャビティ7の底面部分には、弾性表面波フィルタ5などの電子部品素子やICチップが実装されている。また、キャビティ7の内壁には、段差部7aが全周にわたり周設されている。この段差部7aは、絶縁蓋体6を支持する部分となる。そして、この段差部7aに絶縁蓋体6が載置されて、キャビティ7の開口部が封止されることになる。
【0024】
キャビティ7の底面には、Agなどの導体から成る搭載用電極パッド71を含む配線層が被着形成されている。この搭載用電極パッド71は、弾性表面波フィルタ5などの電子部品素子やICチップがバンプ51を介して電気的に接続されるとともに機械的に接合されている。尚、電子部品素子やICチップは、フェースボンディング以外に、ボンディングワイヤにより電気的に接続しても構わない。
【0025】
また、キャビティ7の内壁の全周に周設された段差部7aの表面と、絶縁蓋体6の裏面外周部とは低融点ガラスまたは熱硬化性接着剤などのシール部材64で接合されている。これにより、キャビティ7内部は、気密的に封止することができる。また、電子部品素子やICチップなどの種類によっては、例えば、弾性表面波フィルタ5などでは、特性の安定化のためにキャビティ7内を所定ガスで充満させても良い。また、必要に応じて樹脂で充填してもよい。
【0026】
この絶縁蓋体6の表面には、多層基板1の表面配線層2や内部配線層4、ビアホール導体3とともに、所定配線網を形成する表面回路パターン62が形成されて、さらに、所定回路を形成する回路構成部品60が配置されている。具体的には、絶縁蓋体6は、単層または多層のセラミック材料やガラス−セラミック材料などのセラミック基板やガラス−エポキシ基板からなる。そして、通常の周知の方法、例え厚膜手法や銅箔形成方法によって、表面に回路パターン62が形成されている。
【0027】
また、多層基板1側の表面配線層2と絶縁蓋体6の表面回路パターン62との電気的な接続は、図1に示すように、ボンディングワイヤ63で行う。このように、ボンディングワイヤ63で両者の電気的な接続を行うことにより、多層基板1のキャビティ7の開口と、絶縁蓋体6との間に若干の間隙が発生しても、また、多層基板1の表面と絶縁蓋体6の表面とに段差が生じても、安定して接続が可能となる。しかも、多層基板1の表面側からその接続状態を目視によって確認することができる。
【0028】
さらに、別の電気的な接続方法は、同じく図1に示すように、表面配線層の一部をキャビティ7の開口の近傍にまで延出させ、同時に、表面回路パターン62の一部を絶縁蓋体6の外周近傍にまで延出させ、少なくとも一対の端子電極を有するチップ状電子部品70を、多層基板1と絶縁蓋体6とに跨がらせるように配置するとともに、チップ状電子部品70の端子電極を夫々表面配線層2と表面回路パターン62とに接続する。即ち、チップ状電子部品70の回路機能、例えばチップ状積層セラミックコンデンサでは両者を容量成分でもって接続する。また、チップ抵抗器では両者を抵抗成分でもって接続する。また、チップコイルでは、両者をインダクタンス成分で接続する。また、例えばトランジスタや複合電子部品のような3端子以上のチッ部品を用いても構わない。このとき、多層基板1の表面と絶縁蓋体6の表面とが実質的に同一平面となる必要がある。
【0029】
以下、本発明の多層回路基板の製造方法について参考例を参照して説明する。
【0030】
多層基板1となる絶縁性材料、例えば、ガラス−セラミック材料から成るグリーンシートを形成する。なお、このグリーンシートは、基板1となる複数の基板領域からなる大型グリーンシートである。尚、多層基板1の内部に容量成分やマイクロストリップ線路を形成する場合には、誘電体特性を考慮した絶縁性材料を用いる必要がある。
【0031】
次に、グリーンシート上の各基板領域毎に、ビアホール導体3となる貫通孔をパンチングによって形成し、グリーンシート上の各基板領域毎に、スクリーン印刷により、上述の貫通孔にAg系導電性ペーストを充填するとともに、内部配線層4となる導体膜などを形成する。尚、貫通孔を形成する際に、キャビティ7となる部位をパンチで打ち抜いても構わない。また、内部配線層4となる導体膜を形成するにあたり、キャビティ7の底面部となる部分に、搭載用電極パッド71となる導体膜を形成する。さらに、最外層に位置するグリーンシート上に、表面配線層2となる導体膜、各種電極パッドとなる導体膜を形成する。
【0032】
このように各導体膜が形成されたグリーンシートを、積層順に応じて積層一体化して、複数の基板領域からなる未焼成状態の大型基板を形成する。その後、必要に応じて、各多層回路基板の形状に応じて、分割溝を形成する。
【0033】
次に上述の未焼成状態の大型基板を大気雰囲気や中性雰囲気で焼成処理する。焼成処理条件は、内部配線材料、絶縁材料によって決定される。
【0034】
この工程で、多層基板1となる各基板領域には、内部配線層4、ビアホール導体3が形成され、表面には表面配線層2が形成された大型多層回路基板が得られることになる。また、基板1表面にはキャビティ7が形成され、キャビティ7の底面部には搭載用電極パッド71が形成されている。
【0035】
その後、必要に応じて、表面配線層2に接続する厚膜抵抗素子や所定形状の絶縁保護膜を形成する。
【0036】
次に、基板1表面のキャビティ7周辺に形成された表面配線層2上に、回路構成部品8を半田付け等により実装する。
【0037】
次に、キャビティ7内に弾性表面波フィルタ5など電子部品素子やICチップを実装する。例えば、弾性表面波フィルタ5の実装面側電極部分にバンプ51を形成しておき、キャビティ7の搭載用電極パッド71にバンプ51が当接するように、超音波熱圧着により接合される。
【0038】
また、絶縁蓋体6は、表面回路パターン62を厚膜技法や銅箔形成方法によって形成した基板を用いる。
【0039】
次に、上述の絶縁蓋体6を用いて、キャビティ7の開口を気密封止する。すなわち、キャビティ7の段差部7a上に周設するように低融点ガラスや熱硬化性接着剤などのシール部材64を滴下法などにより塗布後、シール部材64をはさむように絶縁蓋体6をキャビティ7の段差部7aに載置して、荷重をあたえながら、加熱処理して気密封止を行う。
次に、他の回路構成部品60を絶縁蓋体6の表面回路パターン62上に半田付け等により実装する。
【0040】
その後、絶縁蓋体6上の表面回路パターン62と基板1上の表面配線層2間を、例えばAuワイヤやAlワイヤなどのボンディングワイヤ63で接続して、絶縁蓋体6側の表面回路パターン62と、多層基板1側の表面配線層2を電気的に接続する。
【0041】
また、別の電気的な接続として、絶縁蓋体6の表面回路パターン62と多層基板1の表面配線層2との間に、2つの端子電極を有するチップ状電子部品70を実装して、表面回路パターン62と表面配線層2を電気的に接続する。
【0042】
最後に、各基板領域毎に大型基板を分離し、多層回路基板10を得る。
【0043】
尚、上述の電気的な接続方法としては、ボンディングワイヤ63、チップ状電子部品70を用いて接続した状態を図1、図2では示しているが、いずれか一方の電気的に接続方法を用いてもよい。
【0044】
かくして本発明の参考例の多層回路基板10によれば、絶縁蓋体6上に表面回路パターン62を形成したため、多層回路基板10全体の表面配線を形成する領域が増大し、従来のデッスペースを削減でき、高密度実装が可能となり、小型化が可能となる。
【0045】
また、上述の実施例では、絶縁蓋体6側の表面回路パターン62と多層基板1の表面配線層2との接続が目視により確認でき、従来のように絶縁蓋体の裏面で電気的な接続を行っていたものに比較して、接続信頼性が大きく向上する。
また、キャビティ7の段差部7aと絶縁蓋体6の裏面外周部との間にシール部材64を配置しており、絶縁蓋体6の表面回路パターン62を形成し、しかも、この絶縁蓋体6によってキャビティ7を気密的に封止することができる。
【0046】
図3は、本発明の多層回路基板の実施の形態の断面図である。図3の実施例は、多層基板1側の所定配線と、絶縁蓋体6側の回路パターン62との電気的な接続が、段差部7に形成した電極パッド(内部配線層から延出する)24と、絶縁蓋体6の端面に形成した端電極13とによって達成されている。この端電極13は、例えば絶縁蓋体6の端面に厚み方向に延びる凹部を形成し、この凹部の内壁面に端子電極13を形成する。この端子電極13は、絶縁蓋体6の表面に形成した回路パターン62や回路構成部品60と基板の内部や基板の端面を介して接続されている。この接続状態においては、多層基板1のキャビティ7と絶縁蓋体6との隙間から、絶縁蓋体6の端面の端子電極13と、キャビティ7の段差部7aとの電気的接続を目視することができる。この電気的な接続は、例えば半田や導電性樹脂ペーストなどで行われる。
【0047】
また、図4(a)は、図1、図2に示したように多層回路基板10の表面側で、多層基板1の表面配線層2と絶縁蓋体6と表面回路パターン62との電気的な接続を施したもので、別のシール部材を用いた状態を示す。即ち、図1、図2では、低融点ガラスや熱硬化性樹脂を用いているのに対して、本実施例では、キャビティ7の段差部7a上にシール導体膜23を周設するように形成し、同時に、絶縁蓋体6の裏面外周部にもシール導体膜21を周設するように形成している。そして、その両シール導体膜21、23を半田などによって封止している。尚、絶縁蓋体6裏面全面にシール導体膜21を形成しても構わない。特に、このシール導体膜21をグランド電位とすることにより、キャビティ7内に収容した電子部品素子5やICチップなどを不要な電磁波からの保護することができる。
【0048】
また、図4(b)は、図3の多層回路基板における封止部分を示す拡大図である。図3の多層回路基板10は、絶縁蓋体6の端面でもって、多層基板1側と電気的な接続を行うため、この絶縁蓋体6と多層基板1との封止について細心の注意が必要となる。即ち、この封止方法は、特に気密封止を達成しようとする場合には、図4(a)に示すような半田接合による封止は避けるべきである。即ち、封止用の半田が広がり、絶縁蓋体6の端面部分の端電極13にまで到達したら、電気的接続に致命的な問題が発生するためである。このため、図4(b)においては、低融点ガラスや熱硬化性樹脂などのシール部材64を用いて封止することが重要である。このような構造では、絶縁蓋体6側と多層基板1側の電気的接続は半田接合によって行い、気密封止を絶縁性材料で行っている。ここで、重要なことは、段差部7a上において、気密封止領域が、電気的な接続領域(絶縁蓋体の端面)よりも内側に位置されていることが重要となる。
【0049】
なお、本発明は上記の例に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更や改良を施すことは何ら差し支えない。
【0050】
【発明の効果】
本発明の多層回路基板によれば、絶縁蓋体上に表面回路パターンを形成したため、多層回路基板表面のデットスペースを解消することができ、表面の高密度実装が達成でき、小型化が可能となる。
【0051】
また、多層基板側の所定回路網と、絶縁蓋体側の所定回路網との電気的な接続が、多層基板と絶縁蓋体との表面部分で行われる、または、キャビティの段差部上と絶縁蓋体の端面とで行われる。即ち、絶縁蓋体の裏面側では行われていない。従って、多層回路基板の表面側からの目視により、両者の電気的な接続が確認できるため、両者の電気的な接続の信頼性が向上する。
また、絶縁蓋体の裏面は、キャビティを気密封止するシール手段により専有されるため、上述のように多層回路基板の表面における高密度実装を維持しつつ、電子部品素子やICチップなどを気密封止することができる。
【図面の簡単な説明】
【図1】 本発明の多層回路基板の外観斜視図である。
【図2】 図1の多層回路基板の断面図である。
【図3】 本発明の多層回路基板の他の実施形態の断面図である。
【図4】 (a)、(b)は本発明の多層回路基板の気密封止部分の部分断面図である。
【図5】 従来の多層回路基板における蓋体の封止前の斜視図である。
【図6】 図5の多層回路基板の断面図である。
【符号の説明】
10、40 多層回路基板
1 基体
1a〜1f 絶縁層
2 表面配線層
3 ビアホール導体
4 内部配線層
5 電子部品素子やICチップ
6、46 絶縁蓋体
62、42 表面回路パターン
64 シール部材
63 ボンディングワイヤ
60 回路構成部品
70 チップ状電子部品
7 キャビティ
段差部
13 端電極
24 電極パッド
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a multilayer circuit board in which a cavity for electronic components provided on a multilayer board is covered with an insulating lid.
[0002]
[Prior art]
For example, a multilayer circuit board in which an electronic component element such as a surface acoustic wave filter or an IC chip is accommodated in a cavity is provided with an insulating lid or a metal lid in order to protect the electronic component element or the IC chip from dust or moisture. It was sealed.
[0003]
Such a multilayer circuit board is generally provided with a cavity having an opening on the surface of the multilayer board, and an electronic component element such as a surface acoustic wave filter or an IC chip is mounted on the bottom surface of the cavity. Other circuit components such as ICs and capacitors are mounted around. In addition, an insulating lid or a metallic lid is simply mounted in the opening of the cavity, so that the lid portion is restricted in the arrangement of the surface wiring layer on the surface of the multilayer substrate, and the dead of the circuit component parts. It becomes a space.
[0004]
In order to solve such a problem, as shown in FIGS. 5 and 6, a surface circuit pattern 42 is formed on the insulating lid 46 using an insulating material, and predetermined circuit components are used. 60 (Japanese Patent No. 2682477). In the figure, 1 is a multilayer substrate, and 45 is an electronic component element.
[0005]
[Problems to be solved by the invention]
However, according to the multilayer circuit board 40, the terminal electrode 44 connected to the circuit pattern 42 on the front surface side is formed on the back surface of the insulating lid 46, and connected to the internal wiring layer 4 on the stepped portion 7 a of the cavity 7. Pad 74 was formed. The terminal electrode 44 and the pad 74 are connected via solder or the like.
[0006]
In such a structure, since the connection part of both is the back surface part of the insulating lid 46, the connection state cannot be visually confirmed, and the connection reliability is low.
Further, in the above-described structure, the terminal electrode 44 is formed on the back side of the lid 46, and it is very difficult to hermetically seal the cavity 7.
[0007]
The present invention has been devised in view of the above problems, and its purpose is to electrically connect the surface circuit pattern formed on the lid for sealing the opening of the cavity and the surface wiring layer on the multilayer substrate side. It is an object of the present invention to provide a multilayer circuit board in which the connection state can be visually checked and can be miniaturized.
Another object of the present invention is to provide a multilayer circuit board capable of hermetically sealing electronic component elements and IC chips accommodated in cavities.
[0011]
[Means for Solving the Problems]
The multilayer wiring board of the present invention has a surface wiring layer formed on the surface, an opening on the surface, and a multilayer board formed with a cavity for accommodating an electronic component element or IC chip having a stepped portion on the inner wall; In a multilayer circuit board comprising an insulating lid placed on a stepped portion and sealing an opening of a cavity, a surface circuit pattern is formed on the surface of the insulating lid, and a recess extending in the thickness direction is formed on an end surface. A terminal electrode is formed on the inner wall surface of the recess, and an electrode pad is formed on the stepped portion of the cavity. The terminal electrode and the electrode pad are electrically connected with solder or a conductive resin paste. is connected to the junction of the stepped portion is provided around the entire circumference inner wall of the cavity, the back side outer periphery of the front-Symbol insulating lid on the stepped portion is a low melting point glass or a thermosetting adhesive Opening of the cavity is characterized in that the sealed by that.
[0012]
Further, the multilayer wiring board of the present invention having the above structure, the open port of the cavity, is characterized in that the sealed inside of the electrode pad formed on the step portion.
[0013]
The multilayer wiring board of the present invention includes a multilayer wiring board having a surface wiring layer formed on the surface, an opening on the surface, and a cavity for accommodating an electronic component element or IC chip having a stepped portion on the inner wall. In the multilayer circuit board comprising the insulating lid that is placed on the stepped portion and seals the opening of the cavity, the insulating lid has a surface circuit pattern formed on the surface and a recess extending in the thickness direction on the end surface. A terminal electrode is formed on the inner wall surface of the recess, and an electrode pad is formed on the stepped portion of the cavity. The terminal electrode and the electrode pad are made of solder or conductive resin paste. are electrically connected, the stepped portion is circumferentially provided on the inner wall the entire circumference of the cavity, a seal conductor film of the ground potential formed on the step portion, the entire back surface of the insulating lid Opening of the cavity and the formed sealing conductive film I by the Rukoto are joined by the solder is characterized in that it is sealed.
[0014]
Further, the multilayer wiring board of the present invention having the above structure, the open port of the cavity, is characterized in that the sealed inside of the electrode pad formed on the step portion.
[0015]
[Action]
In the present invention, a surface wiring layer is formed on the surface of the multilayer substrate, and a surface circuit pattern is formed on the surface of the insulating lid. Therefore, since a predetermined circuit can be formed on the entire surface of the multilayer circuit board, the surface wiring and circuit components can be increased in density, and the size can be reduced.
[0016]
In addition, since the connection between the surface circuit pattern of the insulating lid and the surface wiring layer of the multilayer substrate is performed on the surface side of the insulating lid, the electrical connection state can be visually confirmed, and the connection reliability Will improve.
[0017]
By connecting the surface wiring layer and the surface circuit pattern to the circuit function of the chip-like component, a predetermined circuit is configured and at the same time, the connection between the two is performed, so that miniaturization and multi-function can be achieved.
[0018]
Further, in the present invention, the surface circuit pattern on the insulating lid side is drawn out to the end face of the insulating lid body, extends from the internal wiring layer on the multilayer substrate side, and is connected to the pad formed on the step portion. Also in this case, since the connection state between the multilayer machine and the insulating lid can be visually observed from the surface side of the multilayer circuit board, the connection reliability is improved.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a multilayer circuit board of the present invention will be described in detail with reference to the drawings.
[0020]
FIG. 1 is an external perspective view of a multilayer circuit board according to a reference example of the present invention. FIG. 2 is a cross-sectional view of the multilayer circuit board of FIG.
[0021]
In the figure, a multilayer substrate 1 is configured by laminating insulating layers 1a to 1f made of ceramic, glass-ceramic material, etc., and an internal wiring layer 4 forming a predetermined network is disposed between the insulating layers 1a to 1f. Has been. In addition to the wiring network, the internal wiring layer 4 has a predetermined function, for example, a counter electrode that forms a capacitive component, a coil pattern that forms an inductance, and a microstrip line. Insulating layers 1a to 1f are formed with via-hole conductors 3 that penetrate the thickness direction of the layers.
[0022]
Further, a surface wiring layer 2 is formed on the surface of the multilayer substrate 1, and circuit component parts 8 constituting a predetermined circuit are further mounted. The surface wiring layer 2, the via-hole conductor 3, and the internal wiring layer 4 are made of a conductive conductor film (conductor) whose main component is Ag-based (Ag simple substance, Ag alloy such as Ag—Pd, Ag—Pt).
[0023]
The multilayer substrate 1 has a cavity 7 having a surface opening. Electronic component elements such as a surface acoustic wave filter 5 and an IC chip are mounted on the bottom surface of the cavity 7. Further, a stepped portion 7 a is provided around the entire inner wall of the cavity 7. This stepped portion 7 a is a portion that supports the insulating lid 6. Then, the insulating lid 6 is placed on the stepped portion 7a, and the opening of the cavity 7 is sealed.
[0024]
A wiring layer including a mounting electrode pad 71 made of a conductor such as Ag is deposited on the bottom surface of the cavity 7. The mounting electrode pad 71 is electrically connected to the electronic component elements such as the surface acoustic wave filter 5 and the IC chip via the bumps 51 and mechanically joined thereto. The electronic component element and the IC chip may be electrically connected by a bonding wire in addition to the face bonding.
[0025]
Further, the surface of the stepped portion 7a provided around the entire inner wall of the cavity 7 and the outer peripheral portion of the back surface of the insulating lid 6 are joined by a sealing member 64 such as low melting glass or thermosetting adhesive. . Thereby, the inside of the cavity 7 can be hermetically sealed. Further, depending on the type of electronic component element or IC chip, for example, in the surface acoustic wave filter 5 or the like, the cavity 7 may be filled with a predetermined gas in order to stabilize the characteristics. Moreover, you may fill with resin as needed.
[0026]
A surface circuit pattern 62 forming a predetermined wiring network is formed on the surface of the insulating lid 6 together with the surface wiring layer 2, the internal wiring layer 4 and the via-hole conductor 3 of the multilayer substrate 1, and a predetermined circuit is further formed. A circuit component 60 is arranged. Specifically, the insulating lid 6 is made of a ceramic substrate such as a single layer or multilayer ceramic material or glass-ceramic material, or a glass-epoxy substrate. Then, well-known methods usually by thick film techniques and copper forming method For example, the circuit pattern 62 is formed on the surface.
[0027]
Further, the electrical connection between the surface wiring layer 2 on the multilayer substrate 1 side and the surface circuit pattern 62 of the insulating lid 6 is performed by a bonding wire 63 as shown in FIG. As described above, even if a slight gap is generated between the opening of the cavity 7 of the multilayer substrate 1 and the insulating lid 6 by electrically connecting the two by the bonding wire 63, the multilayer substrate Even if there is a step between the surface of 1 and the surface of the insulating lid 6, stable connection is possible. In addition, the connection state can be visually confirmed from the surface side of the multilayer substrate 1.
[0028]
Further, as shown in FIG. 1, another electrical connection method extends a part of the surface wiring layer to the vicinity of the opening of the cavity 7 and at the same time, partially covers the surface circuit pattern 62 with an insulating cover. The chip-shaped electronic component 70 that extends to the vicinity of the outer periphery of the body 6 and has at least a pair of terminal electrodes is disposed so as to straddle the multilayer substrate 1 and the insulating lid 6, and the chip-shaped electronic component 70 The terminal electrodes are connected to the surface wiring layer 2 and the surface circuit pattern 62, respectively. That is, in the circuit function of the chip-shaped electronic component 70, for example, in the chip-shaped multilayer ceramic capacitor, both are connected with a capacitance component. In a chip resistor, both are connected with a resistance component. Moreover, in a chip coil, both are connected by an inductance component. Further, may be used, for example, transistors and three or more terminals of the chip components, such as a composite electronic component. At this time, the surface of the multilayer substrate 1 and the surface of the insulating lid 6 need to be substantially coplanar.
[0029]
Hereinafter, a method for producing a multilayer circuit board according to the present invention will be described with reference to reference examples .
[0030]
A green sheet made of an insulating material, for example, a glass-ceramic material, to be the multilayer substrate 1 is formed. The green sheet is a large green sheet composed of a plurality of substrate regions to be the substrate 1. In the case where a capacitance component or a microstrip line is formed inside the multilayer substrate 1, it is necessary to use an insulating material in consideration of dielectric characteristics.
[0031]
Next, a through-hole that becomes the via-hole conductor 3 is formed by punching for each substrate region on the green sheet, and the Ag-based conductive paste is formed on the above-described through-hole by screen printing for each substrate region on the green sheet. And a conductor film or the like to be the internal wiring layer 4 is formed. It should be noted that when forming the through-hole, a portion that becomes the cavity 7 may be punched out with a punch. Further, when forming the conductor film to be the internal wiring layer 4, the conductor film to be the mounting electrode pad 71 is formed on the portion to be the bottom surface of the cavity 7. Further, on the green sheet positioned at the outermost layer, a conductor film to be the surface wiring layer 2 and conductor films to be various electrode pads are formed.
[0032]
The green sheets on which the respective conductor films are thus formed are laminated and integrated according to the stacking order to form an unfired large-sized substrate composed of a plurality of substrate regions. Thereafter, if necessary, division grooves are formed according to the shape of each multilayer circuit board.
[0033]
Next, the unfired large substrate is fired in an air atmosphere or a neutral atmosphere. The firing conditions are determined by the internal wiring material and the insulating material.
[0034]
In this process, a large-sized multilayer circuit board is obtained in which the internal wiring layer 4 and the via-hole conductor 3 are formed in each substrate region to be the multilayer board 1 and the surface wiring layer 2 is formed on the surface. A cavity 7 is formed on the surface of the substrate 1, and a mounting electrode pad 71 is formed on the bottom surface of the cavity 7.
[0035]
Thereafter, as necessary, a thick film resistance element connected to the surface wiring layer 2 and an insulating protective film having a predetermined shape are formed.
[0036]
Next, the circuit component 8 is mounted on the surface wiring layer 2 formed around the cavity 7 on the surface of the substrate 1 by soldering or the like.
[0037]
Next, an electronic component element such as a surface acoustic wave filter 5 or an IC chip is mounted in the cavity 7. For example, bumps 51 are formed on the mounting surface side electrode portion of the surface acoustic wave filter 5 and bonded by ultrasonic thermocompression bonding so that the bumps 51 are in contact with the mounting electrode pads 71 of the cavity 7.
[0038]
The insulating lid 6 uses a substrate on which the surface circuit pattern 62 is formed by a thick film technique or a copper foil forming method.
[0039]
Next, the opening of the cavity 7 is hermetically sealed using the insulating lid 6 described above. That is, after applying a sealing member 64 such as a low melting glass or a thermosetting adhesive so as to surround the stepped portion 7a of the cavity 7 by a dropping method or the like, the insulating lid 6 is cavityd so as to sandwich the sealing member 64 7 is placed on the stepped portion 7a and heat-treated while applying a load to perform hermetic sealing.
Next, another circuit component 60 is mounted on the surface circuit pattern 62 of the insulating lid 6 by soldering or the like.
[0040]
Thereafter, the surface circuit pattern 62 on the insulating lid 6 and the surface wiring layer 2 on the substrate 1 are connected by a bonding wire 63 such as an Au wire or an Al wire, and the surface circuit pattern 62 on the insulating lid 6 side. And the surface wiring layer 2 on the multilayer substrate 1 side are electrically connected.
[0041]
Further, as another electrical connection, a chip-shaped electronic component 70 having two terminal electrodes is mounted between the surface circuit pattern 62 of the insulating lid 6 and the surface wiring layer 2 of the multilayer substrate 1, and the surface The circuit pattern 62 and the surface wiring layer 2 are electrically connected.
[0042]
Finally, a large substrate is separated for each substrate region to obtain a multilayer circuit substrate 10.
[0043]
As the above-described electrical connection method, the connection state using the bonding wire 63 and the chip-shaped electronic component 70 is shown in FIGS. 1 and 2, but either one of the electrical connection methods is used. May be.
[0044]
Thus, according to the multilayer circuit board 10 of the reference example of the present invention, since the formation of the surface circuit pattern 62 on the insulating lid 206, and a region for forming a surface wiring of the entire multilayer circuit board 10 is increased, conventional dead de space Can be reduced, high-density mounting becomes possible, and miniaturization becomes possible.
[0045]
Further, in the above-described embodiment, the connection between the surface circuit pattern 62 on the insulating lid 6 side and the surface wiring layer 2 of the multilayer substrate 1 can be visually confirmed, and electrical connection is made on the back surface of the insulating lid as in the prior art. The connection reliability is greatly improved as compared with the case where the connection is performed.
Further, a sealing member 64 is disposed between the stepped portion 7a of the cavity 7 and the outer peripheral portion of the back surface of the insulating lid 6 to form a surface circuit pattern 62 of the insulating lid 6, and this insulating lid 6 Thus, the cavity 7 can be hermetically sealed.
[0046]
Figure 3 is a cross-sectional view of the implementation in the form of a multilayer circuit board of the present invention. Example of Figure 3, extends a predetermined wiring of the multilayer substrate 1 side, the electrical connection between the circuit pattern 62 of the insulating cover member 6 side, the electrode pad (internal wiring layer 2 formed on the step portion 7 a to) and 24, it has been achieved by the pin electrodes 13 formed on the end surface of the insulating lid 6. The pin electrodes 13, for example, a recess extending in the thickness direction on an end surface of the insulating lid 206 is formed, and forming the terminal electrodes 13 on the inner wall surface of the recess. The terminal electrode 13 is connected to the circuit pattern 62 or the circuit component 60 formed on the surface of the insulating lid 6 via the inside of the substrate or the end surface of the substrate. In this connected state, the electrical connection between the terminal electrode 13 on the end face of the insulating lid 6 and the stepped portion 7 a of the cavity 7 can be visually observed from the gap between the cavity 7 of the multilayer substrate 1 and the insulating lid 6. it can. This electrical connection is performed by, for example, solder or conductive resin paste.
[0047]
4A shows the electrical connection between the surface wiring layer 2, the insulating lid 6 and the surface circuit pattern 62 of the multilayer substrate 1 on the surface side of the multilayer circuit substrate 10 as shown in FIGS. This shows a state where another seal member is used. That is, in FIG. 1 and FIG. 2, low melting point glass and thermosetting resin are used, but in this embodiment, the seal conductor film 23 is formed on the stepped portion 7a of the cavity 7 so as to be provided around. At the same time, the sealing conductor film 21 is formed around the back outer peripheral portion of the insulating lid 6. Both the sealing conductor films 21 and 23 are sealed with solder or the like. Note that the seal conductor film 21 may be formed on the entire back surface of the insulating lid 6. In particular, by setting the seal conductor film 21 to the ground potential, the electronic component element 5 and the IC chip accommodated in the cavity 7 can be protected from unnecessary electromagnetic waves.
[0048]
FIG. 4B is an enlarged view showing a sealing portion in the multilayer circuit board of FIG. Since the multilayer circuit board 10 of FIG. 3 is electrically connected to the multilayer substrate 1 side by the end face of the insulating lid 6, careful attention must be paid to the sealing between the insulating lid 6 and the multilayer substrate 1. It becomes. That is, this sealing method should avoid sealing by solder bonding as shown in FIG. 4A, particularly when achieving airtight sealing. That is, the solder spreads for sealing, when it reaches to the pin electrode 13 of the end face portion of the insulator lid 206, because a fatal problem in electrical connection occurs. For this reason, in FIG. 4B, it is important to seal using a sealing member 64 such as a low-melting glass or a thermosetting resin. In such a structure, electrical connection between the insulating lid 6 side and the multilayer substrate 1 side is performed by solder bonding, and hermetic sealing is performed with an insulating material. Here, it is important that the hermetic sealing region is located on the inner side of the electrical connection region (end surface of the insulating lid) on the stepped portion 7a.
[0049]
In addition, this invention is not limited to said example, A various change and improvement may be performed in the range which does not deviate from the summary of this invention.
[0050]
【The invention's effect】
According to the multilayer circuit board of the present invention, since the surface circuit pattern is formed on the insulating lid, the dead space on the surface of the multilayer circuit board can be eliminated, high-density mounting on the surface can be achieved, and miniaturization is possible. Become.
[0051]
In addition, electrical connection between the predetermined circuit network on the multilayer substrate side and the predetermined circuit network on the insulating lid side is performed on the surface portion of the multilayer substrate and the insulating lid body, or on the step portion of the cavity and the insulating lid. It is done with the end face of the body. That is, it is not performed on the back side of the insulating lid. Therefore, since the electrical connection between the two can be confirmed by visual observation from the surface side of the multilayer circuit board, the reliability of the electrical connection between the two is improved.
In addition, since the back surface of the insulating lid is exclusively used by a sealing means for hermetically sealing the cavity, as described above, the electronic component element, the IC chip, etc. are air-tight while maintaining high-density mounting on the surface of the multilayer circuit board. It can be hermetically sealed.
[Brief description of the drawings]
FIG. 1 is an external perspective view of a multilayer circuit board according to the present invention.
2 is a cross-sectional view of the multilayer circuit board of FIG.
FIG. 3 is a cross-sectional view of another embodiment of the multilayer circuit board of the present invention.
4A and 4B are partial cross-sectional views of a hermetically sealed portion of a multilayer circuit board according to the present invention.
FIG. 5 is a perspective view of a conventional multilayer circuit board before sealing a lid.
6 is a cross-sectional view of the multilayer circuit board of FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10, 40 Multilayer circuit board 1 Base | substrate 1a-1f Insulation layer 2 Surface wiring layer 3 Via-hole conductor 4 Internal wiring layer 5 Electronic component element and IC chip 6, 46 Insulation lid 62, 42 Surface circuit pattern 64 Seal member 63 Bonding wire 60 circuit components 70 electronic chip components 7 cavity 7 a stepped portion 13 pin electrode 24 electrode pads

Claims (4)

表面に表面配線層を形成するとともに、表面に開口を有し、内壁に段差部を有する電子部品素子またはICチップが収容されるキャビティを形成した多層基板と、
前記段差部に載置されキャビティの開口を封止する絶縁蓋体とからなる多層回路基板において、
前記絶縁蓋体には、表面に表面回路パターンが形成され、端面に厚み方向に延びる凹部が形成されて該凹部の内壁面に端子電極が形成されているとともに、前記キャビティの段差部上には電極パッドが形成されており、前記端子電極と前記電極パッドとは半田または導電性樹脂ペーストで電気的に接続され
前記段差部は前記キャビティの内壁全周に周設されており、
前記段差部上に前記絶縁蓋体の裏面外周部が低融点ガラスまたは熱硬化性接着剤で接合されることによって前記キャビティの開口が封止されていることを特徴とする多層回路基板。
A multilayer substrate having a surface wiring layer formed on the surface, an opening on the surface, and a cavity accommodating an electronic component element or IC chip having a stepped portion on the inner wall;
In the multilayer circuit board comprising the insulating lid that is placed on the stepped portion and seals the opening of the cavity,
A surface circuit pattern is formed on the surface of the insulating lid, a recess extending in the thickness direction is formed on the end surface, a terminal electrode is formed on the inner wall surface of the recess, and on the stepped portion of the cavity An electrode pad is formed, and the terminal electrode and the electrode pad are electrically connected with solder or a conductive resin paste ,
The step portion is provided around the entire inner wall of the cavity,
Multilayer circuit board opening in the cavity, wherein that you have been sealed by the rear surface outer peripheral portion of the insulating lid on the stepped portion is joined with low-melting glass or a thermosetting adhesive.
前記キャビティの開口は、前記段差部上に形成した前記電極パッドの内側で封止されていることを特徴とする請求項1記載の多層回路基板。The multilayer circuit board according to claim 1, wherein the opening of the cavity is sealed inside the electrode pad formed on the stepped portion. 表面に表面配線層を形成するとともに、表面に開口を有し、内壁に段差部を有する電子部品素子またはICチップが収容されるキャビティを形成した多層基板と、A multilayer substrate on which a surface wiring layer is formed on the surface, an opening is formed on the surface, and a cavity for accommodating an electronic component element or IC chip having a stepped portion on the inner wall is formed;
前記段差部に載置されキャビティの開口を封止する絶縁蓋体とからなる多層回路基板において、In the multilayer circuit board comprising the insulating lid that is placed on the stepped portion and seals the opening of the cavity,
前記絶縁蓋体には、表面に表面回路パターンが形成され、端面に厚み方向に延びる凹部が形成されて該凹部の内壁面に端子電極が形成されているとともに、前記キャビティの段差部上には電極パッドが形成されており、前記端子電極と前記電極パッドとは半田または導電性樹脂ペーストで電気的に接続され、A surface circuit pattern is formed on the surface of the insulating lid, a recess extending in the thickness direction is formed on the end surface, a terminal electrode is formed on the inner wall surface of the recess, and on the stepped portion of the cavity An electrode pad is formed, and the terminal electrode and the electrode pad are electrically connected with solder or a conductive resin paste,
前記段差部は前記キャビティの内壁全周に周設されており、The step portion is provided around the entire inner wall of the cavity,
前記段差部上に形成したグランド電位のシール導体膜と、前記絶縁蓋体の裏面全面に形成したシール導体膜とが半田で接合されることによって前記キャビティの開口が封止されていることを特徴とする多層回路基板。The opening of the cavity is sealed by bonding a seal conductor film having a ground potential formed on the stepped portion and a seal conductor film formed on the entire back surface of the insulating lid with solder. A multilayer circuit board.
前記キャビティの開口は、前記段差部上に形成した前記電極パッドの内側で封止されていることを特徴とする請求項3記載の多層回路基板。The multilayer circuit board according to claim 3, wherein the opening of the cavity is sealed inside the electrode pad formed on the stepped portion.
JP2001163551A 2001-05-31 2001-05-31 Multilayer circuit board Expired - Fee Related JP3854095B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001163551A JP3854095B2 (en) 2001-05-31 2001-05-31 Multilayer circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001163551A JP3854095B2 (en) 2001-05-31 2001-05-31 Multilayer circuit board

Publications (2)

Publication Number Publication Date
JP2002359340A JP2002359340A (en) 2002-12-13
JP3854095B2 true JP3854095B2 (en) 2006-12-06

Family

ID=19006498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001163551A Expired - Fee Related JP3854095B2 (en) 2001-05-31 2001-05-31 Multilayer circuit board

Country Status (1)

Country Link
JP (1) JP3854095B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5331546B2 (en) * 2008-04-24 2013-10-30 株式会社フジクラ Pressure sensor module and electronic component
JP5072124B2 (en) * 2009-10-30 2012-11-14 パナソニック株式会社 Circuit boards and electronic equipment
JP5870808B2 (en) * 2012-03-28 2016-03-01 富士通株式会社 Laminated module
JP6506034B2 (en) * 2015-01-29 2019-04-24 京セラ株式会社 Electronic device mounting substrate and electronic device
JP2019153658A (en) * 2018-03-02 2019-09-12 富士通株式会社 Board module and board module manufacturing method

Also Published As

Publication number Publication date
JP2002359340A (en) 2002-12-13

Similar Documents

Publication Publication Date Title
US6424233B1 (en) Complex electronic component with a first multilayer filter having a cavity in which a second filter is mounted
CN1765162B (en) Ceramic multilayer substrate
JP2002100698A (en) Semiconductor device package and semiconductor device
JPH0697315A (en) Circuit element module
JP3854095B2 (en) Multilayer circuit board
JP2001284808A (en) Laminated circuit board
JP2013110214A (en) Package for housing electronic component
JP3538774B2 (en) Wiring board
JPH05235689A (en) High frequency device
JP6312256B2 (en) Electronic component storage package
JP2003078103A (en) Circuit board
JPH0878954A (en) Oscillator and manufacture thereof
JP3866128B2 (en) Wiring board
JP3935833B2 (en) Electronic equipment
JP4227477B2 (en) Electronic component mounting substrate, electronic device, and method of manufacturing electronic component mounting substrate
JP2002359475A (en) Multilayer circuit board
JPH06291521A (en) High frequency multi-layer integrated circuit
JP2002280481A (en) Package for housing high-frequency circuit element
JP3847220B2 (en) Wiring board
JP2002100697A (en) Electronic component and electronic device provided with the same
JPH01273390A (en) Electric circuit part
JPH0548401U (en) Dielectric filter
JP2004147110A (en) Package for storing piezoelectric vibrator
JP2002299829A (en) Composite electronic component
JP2878046B2 (en) Electronic component storage package

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050201

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060314

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060512

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060613

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060803

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060829

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060907

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees