JP2002359340A - Multilayer circuit board - Google Patents

Multilayer circuit board

Info

Publication number
JP2002359340A
JP2002359340A JP2001163551A JP2001163551A JP2002359340A JP 2002359340 A JP2002359340 A JP 2002359340A JP 2001163551 A JP2001163551 A JP 2001163551A JP 2001163551 A JP2001163551 A JP 2001163551A JP 2002359340 A JP2002359340 A JP 2002359340A
Authority
JP
Japan
Prior art keywords
cavity
insulating lid
circuit board
multilayer
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001163551A
Other languages
Japanese (ja)
Other versions
JP3854095B2 (en
Inventor
Toshiaki Takagi
俊昭 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2001163551A priority Critical patent/JP3854095B2/en
Publication of JP2002359340A publication Critical patent/JP2002359340A/en
Application granted granted Critical
Publication of JP3854095B2 publication Critical patent/JP3854095B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance

Abstract

PROBLEM TO BE SOLVED: To provide a multilayer circuit board where the electric connection between an insulating cover and a multilayer board is stable and besides the downsizing is possible. SOLUTION: For this multilayer circuit board 10, a surface circuit pattern 62 is made on the insulating cover 6. Moreover, the surface wiring layer 2 of the multilayer board 1 and the surface circuit pattern 62 of the insulating cover 6 are electrically connected with each other by bonding wire 63 and a chip-form electronic part 70. Moreover, a step 7a is provided all around the inwall of a cavity 7. Then, the periphery of the rear of the insulating cover 6 and the step of the cavity 7 are joined with each other by seal member 64.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、多層基板に設けら
れた電子部品用キャビティを絶縁蓋体で覆った多層回路
基板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer circuit board in which a cavity for an electronic component provided in the multilayer board is covered with an insulating lid.

【0002】[0002]

【従来の技術】例えば、弾性表面波フィルタなどの電子
部品素子やICチップをキャビティ内に収容した多層回
路基板は、電子部品素子やICチップを塵や湿気等から
保護するために、絶縁蓋体や金属蓋体によって封止して
いた。
2. Description of the Related Art For example, a multilayer circuit board containing an electronic component element such as a surface acoustic wave filter or an IC chip in a cavity is provided with an insulating cover to protect the electronic component element and the IC chip from dust and moisture. And a metal lid.

【0003】このような多層回路基板は、一般的に、多
層基板の表面に開口を有するキャビティを設け、そのキ
ャビティの底面に弾性表面波フィルタなどの電子部品素
子やICチップを搭載し、多層基板のキャビティ開口周
囲にIC、コンデンサ等の他の回路構成部品を実装す
る。そして、キャビティの開口には、絶縁蓋体や金属性
蓋体を単に搭載していたため、多層基板の表面において
この蓋体部分が表面配線層の配置にあたり制約された
り、また、回路構成部品のデッドスペースとなってしま
う。
[0003] Such a multilayer circuit board is generally provided with a cavity having an opening on the surface of the multilayer substrate, and mounted with electronic component elements such as surface acoustic wave filters and IC chips on the bottom surface of the cavity. Other circuit components such as an IC and a capacitor are mounted around the cavity opening. In addition, since an insulating lid or a metallic lid is simply mounted on the opening of the cavity, the lid portion is restricted in arranging the surface wiring layer on the surface of the multilayer substrate, and the dead of circuit components is reduced. It becomes space.

【0004】このような問題を解決するために、図5、
6に示すように、蓋体46に絶縁材料を用いて、この絶
縁蓋体46上に表面回路パターン42を形成し、また、
所定回路構成部品60を搭載していた(特許第2682
477号公報)。尚、図において、1は多層基板であ
り、45は電子部品素子である。
In order to solve such a problem, FIG.
As shown in FIG. 6, using an insulating material for the lid 46, the surface circuit pattern 42 is formed on the insulating lid 46, and
A predetermined circuit component 60 is mounted (Japanese Patent No. 2682)
No. 477). In the drawing, reference numeral 1 denotes a multilayer substrate, and reference numeral 45 denotes an electronic component element.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記多
層回路基板40によれば、絶縁蓋体46の裏面に、表面
側の回路パターン42に接続する端子電極44を形成す
るとともに、キャビティ7の段差部7aに内部配線層4
に接続されるパッド74を形成していた。そして、端子
電極44とパッド74とを半田などを介して接続してい
た。
However, according to the multilayer circuit board 40, the terminal electrode 44 connected to the circuit pattern 42 on the front surface side is formed on the back surface of the insulating cover 46, and the stepped portion of the cavity 7 is formed. 7a has an internal wiring layer 4
Is formed. Then, the terminal electrode 44 and the pad 74 are connected via solder or the like.

【0006】このような構造では、両者の接続部分が、
絶縁蓋体46の裏面部分となるため、接続状態を目視に
より確認することができず、接続信頼性が低かった。ま
た、上述の構造では、蓋体46の裏面側に端子電極44
が形成されており、キャビティ7を気密的に封止するこ
とが非常に困難であった。
In such a structure, the connecting portion between the two is
Since it is located on the back surface of the insulating lid 46, the connection state could not be visually confirmed, and the connection reliability was low. In the above-described structure, the terminal electrode 44 is provided on the back side of the lid 46.
Was formed, and it was very difficult to hermetically seal the cavity 7.

【0007】本発明は、上記課題に鑑みて案出されたも
のであり、その目的は、キャビティの開口を封止する蓋
体に形成した表面回路パターンと多層基板側の表面配線
層との電気的な接続の接続状態が目視でき、かつ小型化
が可能である多層回路基板を提供することにある。ま
た、別の目的は、さらに、キャビティ内に収容した電子
部品素子やICチップを気密的に封止できる多層回路基
板を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide an electric circuit between a surface circuit pattern formed on a lid for sealing an opening of a cavity and a surface wiring layer on a multilayer substrate side. It is an object of the present invention to provide a multi-layer circuit board in which the connection state of a typical connection can be visually observed and the size can be reduced. Another object is to provide a multilayer circuit board capable of hermetically sealing electronic component elements and IC chips housed in a cavity.

【0008】[0008]

【課題を解決するための手段】本発明の多層回路基板
は、表面に表面配線層を形成するとともに、表面に開口
を有し、内壁に段差部を有する電子部品素子またはIC
チップが収容されるキャビティを形成した多層基板と、
前記段差部に載置されキャビティの開口を封止する絶縁
蓋体とからなる多層回路基板において、前記絶縁蓋体
は、その表面に表面回路パターンが形成されており、か
つ該表面回路パターンが前記表面配線層に多層基板及び
絶縁蓋体の表面側で接続されている多層回路基板であ
る。
SUMMARY OF THE INVENTION A multilayer circuit board according to the present invention has an electronic component element or IC having a surface wiring layer formed on the surface, an opening on the surface, and a step on the inner wall.
A multilayer substrate having a cavity in which the chip is housed,
In a multilayer circuit board comprising an insulating lid placed on the step and sealing an opening of the cavity, the insulating lid has a surface circuit pattern formed on a surface thereof, and the surface circuit pattern is The multilayer circuit board is connected to the surface wiring layer on the surface side of the multilayer board and the insulating lid.

【0009】また、前記表面配線層と前記表面回路パタ
ーンとが、ボンディングワイヤにより接続されている。
The surface wiring layer and the surface circuit pattern are connected by bonding wires.

【0010】また、前記多層基板の表面と前記絶縁蓋体
の表面とが同一平面であり、かつ前記多層基板表面と前
記絶縁蓋体表面とにまたがるように少なくとも一対の端
子電極を有するチップ状電子部品を配置させるととも
に、一方の端子電極と前記表面配線層に、他方の端子電
極を前記表面回路パターンに電気的に接続させた。
[0010] Further, a chip-shaped electronic device in which the surface of the multilayer substrate and the surface of the insulating lid are coplanar, and has at least one pair of terminal electrodes so as to extend over the surface of the multilayer substrate and the surface of the insulating lid. The components were arranged, and one terminal electrode and the surface wiring layer were electrically connected to each other, and the other terminal electrode was electrically connected to the surface circuit pattern.

【0011】また、表面に表面配線層を形成するととも
に、表面に開口を有し、内壁に段差部を有する電子部品
素子またはICチップが収容されるキャビティを形成し
た多層基板と、前記段差部に載置されキャビティの開口
を封止する絶縁蓋体とからなる多層回路基板において、
前記絶縁蓋体には、表面に表面回路パターンが、端面に
端面電極が形成されているとともに、前記キャビティの
段差部上には電極パッドが形成されており、前記端面電
極と前記電極パッドとは電気的に接続される多層回路基
板である。また、前記段差部はキャビティの内壁全周に
周設されており、かつ該段差部上には、前記絶縁蓋体の
裏面外周部が接合される。
[0011] Further, a multilayer substrate having a surface wiring layer formed on the surface thereof, an opening on the surface thereof, and a cavity for accommodating an electronic component element or an IC chip having a stepped portion on the inner wall, is formed on the stepped portion. In a multilayer circuit board comprising a mounting and an insulating lid for sealing the opening of the cavity,
In the insulating lid, a surface circuit pattern is formed on the surface, an end face electrode is formed on an end face, and an electrode pad is formed on a step portion of the cavity, and the end face electrode and the electrode pad are It is a multilayer circuit board that is electrically connected. The step portion is provided around the entire inner wall of the cavity, and the outer peripheral portion of the back surface of the insulating lid is joined to the step portion.

【0012】また、前記キャビティの開口の封止は、前
記段差部上に前記絶縁蓋体の裏面外周部を低融点ガラス
または熱硬化性接着剤で接着させることにより行われ
る。
The sealing of the opening of the cavity is performed by bonding the outer peripheral portion of the back surface of the insulating lid on the step portion with a low melting point glass or a thermosetting adhesive.

【0013】また、前記キャビティの開口の封止は、前
記段差部上に形成したシール導体膜と、前記絶縁蓋体の
裏面外周部に形成したシール導体膜とを半田で接合する
ことにより行われる。
The sealing of the opening of the cavity is performed by bonding the seal conductive film formed on the step portion and the seal conductive film formed on the outer peripheral portion of the back surface of the insulating lid with solder. .

【0014】また、前記キャビティの開口の封止は、前
記段差部上に形成した電極パッドの内側で行われる。
The sealing of the opening of the cavity is performed inside the electrode pad formed on the step.

【0015】[0015]

【作用】本発明において、多層基板の表面には、表面配
線層が形成されており、絶縁蓋体の表面に、表面回路パ
ターンが形成されている。従って、多層回路基板の表面
の全体で所定回路を形成することができるため、表面配
線及び回路構成部品などの高密度化が可能となり、小型
化が可能となる。
In the present invention, a surface wiring layer is formed on the surface of the multilayer substrate, and a surface circuit pattern is formed on the surface of the insulating lid. Accordingly, since a predetermined circuit can be formed on the entire surface of the multilayer circuit board, the density of the surface wiring and circuit components can be increased, and the size can be reduced.

【0016】また、絶縁蓋体の表面回路パターンと多層
基板の表面配線層との接続が、絶縁蓋体の表面側で行わ
れるため、この電気的な接続状態が目視で確認すること
ができ、接続信頼性が向上する。
Further, since the connection between the surface circuit pattern of the insulating lid and the surface wiring layer of the multilayer substrate is made on the front side of the insulating lid, the electrical connection state can be visually confirmed. Connection reliability is improved.

【0017】表面配線層と表面回路パターンとの接続
を、チップ状部品の回路機能に接続することにより、所
定回路を構成すると同時に、両者の接続を行うので、小
型化、多機能化が可能となる。
By connecting the connection between the surface wiring layer and the surface circuit pattern to the circuit function of the chip-like component, a predetermined circuit is formed and at the same time, both connections are made. Become.

【0018】また、別の発明では、絶縁蓋体側の表面回
路パターンは、絶縁蓋体の端面に引き出され、多層基板
側の内部配線層から延び、かつ段差部上に形成されたパ
ッドと接続される。この場合も、多層回路基板の表面側
から、多層基板と絶縁蓋体との隙間から両者の接続状態
が目視できるため、接続信頼性が向上する。
In another aspect of the present invention, the surface circuit pattern on the side of the insulating lid is drawn out to the end face of the insulating lid, extends from the internal wiring layer on the multilayer substrate side, and is connected to a pad formed on the step portion. You. Also in this case, the connection state of the multilayer circuit board and the insulating lid can be visually observed from the front surface side of the multilayer circuit board, thereby improving the connection reliability.

【0019】[0019]

【発明の実施の形態】以下、本発明の多層回路基板を図
面に基づいて詳説する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a multilayer circuit board according to the present invention will be described in detail with reference to the drawings.

【0020】図1は本発明の多層回路基板の外観斜視図
である。図2は図1の多層回路基板の断面図である。
FIG. 1 is an external perspective view of a multilayer circuit board according to the present invention. FIG. 2 is a sectional view of the multilayer circuit board of FIG.

【0021】図において、多層基板1は、セラミック、
ガラス−セラミック材料などの絶縁層1a〜1fが積層
して構成され、絶縁層1a〜1fの各層間に、所定回路
網を形成する内部配線層4が配置されている。この内部
配線層4は、配線網以外に、所定機能、例えば容量成分
を形成する対向電極であったり、インダクタンスを形成
するコイルパターンであったり、さらにマイクロストリ
ップ線路であったりする。また、絶縁層1a〜1fに
は、その層の厚み方向を貫くビアホール導体3が形成さ
れている。
In the figure, a multilayer substrate 1 is made of ceramic,
Insulating layers 1a to 1f made of glass-ceramic material or the like are laminated, and an internal wiring layer 4 forming a predetermined circuit network is arranged between the insulating layers 1a to 1f. The internal wiring layer 4 has a predetermined function other than the wiring network, such as a counter electrode that forms a capacitance component, a coil pattern that forms an inductance, and a microstrip line. Also, via-hole conductors 3 are formed in the insulating layers 1a to 1f so as to penetrate the layers in the thickness direction.

【0022】さらに、多層基板1の表面には、表面配線
層2が形成され、さらに、所定回路を構成する回路構成
部品8が搭載されている。この表面配線層2、ビアホー
ル導体3、内部配線層4はAg系(Ag単体、Ag−P
d、Ag−PtなどのAg合金)を主成分とする導体導
体膜(導体)からなる。
Further, a surface wiring layer 2 is formed on the surface of the multilayer substrate 1, and a circuit component 8 constituting a predetermined circuit is mounted thereon. The surface wiring layer 2, the via-hole conductor 3, and the internal wiring layer 4 are made of an Ag-based material (Ag alone, Ag-P
d, an Ag alloy such as Ag-Pt) as a main component.

【0023】また、多層基板1には、表面開口を有する
キャビティ7が形成されている。キャビティ7の底面部
分には、弾性表面波フィルタ5などの電子部品素子やI
Cチップが実装されている。また、キャビティ7の内壁
には、段差部7aが全周にわたり周設されている。この
段差部7aは、絶縁蓋体6を支持する部分となる。そし
て、この段差部7aに絶縁蓋体6が載置されて、キャビ
ティ7の開口部が封止されることになる。
In the multilayer substrate 1, a cavity 7 having a surface opening is formed. An electronic component element such as a surface acoustic wave filter 5 and I
A C chip is mounted. On the inner wall of the cavity 7, a step portion 7a is provided around the entire circumference. The step 7 a is a portion that supports the insulating lid 6. Then, the insulating lid 6 is placed on the step 7a, and the opening of the cavity 7 is sealed.

【0024】キャビティ7の底面には、Agなどの導体
から成る搭載用電極パッド71を含む配線層が被着形成
されている。この搭載用電極パッド71は、弾性表面波
フィルタ5などの電子部品素子やICチップがバンプ5
1を介して電気的に接続されるとともに機械的に接合さ
れている。尚、電子部品素子やICチップは、フェース
ボンディング以外に、ボンディングワイヤにより電気的
に接続しても構わない。
A wiring layer including a mounting electrode pad 71 made of a conductor such as Ag is formed on the bottom surface of the cavity 7. The mounting electrode pad 71 is provided with an electronic component element such as a surface acoustic wave filter 5 or an IC chip.
1 and are mechanically joined together. Note that the electronic component elements and the IC chip may be electrically connected by bonding wires other than the face bonding.

【0025】また、キャビティ7の内壁の全周に周設さ
れた段差部7aの表面と、絶縁蓋体6の裏面外周部とは
低融点ガラスまたは熱硬化性接着剤などのシール部材6
4で接合されている。これにより、キャビティ7内部
は、気密的に封止することができる。また、電子部品素
子やICチップなどの種類によっては、例えば、弾性表
面波フィルタ5などでは、特性の安定化のためにキャビ
ティ7内を所定ガスで充満させても良い。また、必要に
応じて樹脂で充填してもよい。
The surface of the stepped portion 7a provided around the entire inner wall of the cavity 7 and the outer peripheral portion of the back surface of the insulating lid 6 are formed of a sealing member 6 made of low melting glass or a thermosetting adhesive.
4 are joined. Thus, the inside of the cavity 7 can be hermetically sealed. Further, depending on the type of the electronic component element or the IC chip, for example, in the surface acoustic wave filter 5 or the like, the inside of the cavity 7 may be filled with a predetermined gas in order to stabilize the characteristics. Moreover, you may fill with resin as needed.

【0026】この絶縁蓋体6の表面には、多層基板1の
表面配線層2や内部配線層4、ビアホール導体3ととも
に、所定配線網を形成する表面回路パターン62が形成
されて、さらに、所定回路を形成する回路構成部品60
が配置されている。具体的には、絶縁蓋体6は、単層ま
たは多層のセラミック材料やガラス−セラミック材料な
どのセラミック基板やガラス−エポキシ基板からなる。
そして、通常の周知の方法、例えは厚膜手法や銅箔形成
方法によって、表面に回路パターン62が形成されてい
る。
A surface circuit pattern 62 for forming a predetermined wiring network is formed on the surface of the insulating lid 6 together with the surface wiring layer 2, the internal wiring layer 4, and the via-hole conductor 3 of the multilayer substrate 1. Circuit component 60 forming a circuit
Is arranged. Specifically, the insulating lid 6 is made of a ceramic substrate such as a single-layer or multilayer ceramic material or a glass-ceramic material, or a glass-epoxy substrate.
Then, the circuit pattern 62 is formed on the surface by an ordinary well-known method, for example, a thick film method or a copper foil forming method.

【0027】また、多層基板1側の表面配線層2と絶縁
蓋体6の表面回路パターン62との電気的な接続は、図
1に示すように、ボンディングワイヤ63で行う。この
ように、ボンディングワイヤ63で両者の電気的な接続
を行うことにより、多層基板1のキャビティ7の開口
と、絶縁蓋体6との間に若干の間隙が発生しても、ま
た、多層基板1の表面と絶縁蓋体6の表面とに段差が生
じても、安定して接続が可能となる。しかも、多層基板
1の表面側からその接続状態を目視によって確認するこ
とができる。
The electrical connection between the surface wiring layer 2 on the side of the multilayer substrate 1 and the surface circuit pattern 62 of the insulating lid 6 is made by bonding wires 63 as shown in FIG. As described above, by making the electrical connection between the two by the bonding wires 63, even if a slight gap is generated between the opening of the cavity 7 of the multilayer substrate 1 and the insulating cover 6, Even if there is a step between the surface of the first cover 1 and the surface of the insulating lid 6, stable connection is possible. In addition, the connection state can be visually checked from the front side of the multilayer substrate 1.

【0028】さらに、別の電気的な接続方法は、同じく
図1に示すように、表面配線層の一部をキャビティ7の
開口の近傍にまで延出させ、同時に、表面回路パターン
62の一部を絶縁蓋体6の外周近傍にまで延出させ、少
なくとも一対の端子電極を有するチップ状電子部品70
を、多層基板1と絶縁蓋体6とに跨がらせるように配置
するとともに、チップ状電子部品70の端子電極を夫々
表面配線層2と表面回路パターン62とに接続する。即
ち、チップ状電子部品70の回路機能、例えばチップ状
積層セラミックコンデンサでは両者を容量成分でもって
接続する。また、チップ抵抗器では、両者を抵抗成分で
もって接続する。また、チップコイルでは、両者をイン
ダクタンス成分で接続する。また、例えばトランジスタ
や複合電子部品のような3端子以上のチッフ部品を用い
ても構わない。このとき、多層基板1の表面と絶縁蓋体
6の表面とが実質的に同一平面となる必要がある。
Further, as another electrical connection method, as shown in FIG. 1, a part of the surface wiring layer is extended to the vicinity of the opening of the cavity 7, and a part of the surface circuit pattern 62 is simultaneously formed. Is extended to the vicinity of the outer periphery of the insulating lid 6, and a chip-shaped electronic component 70 having at least a pair of terminal electrodes is provided.
Are arranged so as to straddle the multilayer substrate 1 and the insulating lid 6, and the terminal electrodes of the chip-shaped electronic component 70 are connected to the surface wiring layer 2 and the surface circuit pattern 62, respectively. That is, the circuit function of the chip-shaped electronic component 70, for example, in a chip-shaped multilayer ceramic capacitor, both are connected with a capacitance component. In a chip resistor, both are connected by a resistance component. In a chip coil, both are connected by an inductance component. Further, a chip component having three or more terminals, such as a transistor or a composite electronic component, may be used. At this time, the surface of the multilayer substrate 1 and the surface of the insulating lid 6 need to be substantially coplanar.

【0029】以下、本発明の多層回路基板の製造方法に
ついて説明する。
Hereinafter, a method for manufacturing a multilayer circuit board according to the present invention will be described.

【0030】多層基板1となる絶縁性材料、例えば、ガ
ラス−セラミック材料から成るグリーンシートを形成す
る。なお、このグリーンシートは、基板1となる複数の
基板領域からなる大型グリーンシートである。尚、多層
基板1の内部に容量成分やマイクロストリップ線路を形
成する場合には、誘電体特性を考慮した絶縁性材料を用
いる必要がある。
A green sheet made of an insulating material to be the multilayer substrate 1, for example, a glass-ceramic material is formed. Note that this green sheet is a large green sheet including a plurality of substrate regions serving as the substrate 1. When a capacitance component or a microstrip line is formed inside the multilayer substrate 1, it is necessary to use an insulating material in consideration of dielectric characteristics.

【0031】次に、グリーンシート上の各基板領域毎
に、ビアホール導体3となる貫通孔をパンチングによっ
て形成し、グリーンシート上の各基板領域毎に、スクリ
ーン印刷により、上述の貫通孔にAg系導電性ペースト
を充填するとともに、内部配線層4となる導体膜などを
形成する。尚、貫通孔を形成する際に、キャビティ7と
なる部位をパンチで打ち抜いても構わない。また、内部
配線層4となる導体膜を形成するにあたり、キャビティ
7の底面部となる部分に、搭載用電極パッド71となる
導体膜を形成する。さらに、最外層に位置するグリーン
シート上に、表面配線層2となる導体膜、各種電極パッ
ドとなる導体膜を形成する。
Next, a through hole serving as a via hole conductor 3 is formed in each substrate region on the green sheet by punching, and an Ag-based material is formed in each of the substrate regions on the green sheet by screen printing. The conductive paste is filled, and a conductive film or the like to be the internal wiring layer 4 is formed. When forming the through hole, a portion to be the cavity 7 may be punched with a punch. In forming a conductive film to be the internal wiring layer 4, a conductive film to be the mounting electrode pad 71 is formed in a portion to be a bottom surface of the cavity 7. Further, a conductor film to be the surface wiring layer 2 and a conductor film to be various electrode pads are formed on the outermost green sheet.

【0032】このように各導体膜が形成されたグリーン
シートを、積層順に応じて積層一体化して、複数の基板
領域からなる未焼成状態の大型基板を形成する。その
後、必要に応じて、各多層回路基板の形状に応じて、分
割溝を形成する。
The green sheets on which the conductor films are formed as described above are laminated and integrated according to the lamination order to form a large unfired large substrate composed of a plurality of substrate regions. Thereafter, if necessary, division grooves are formed according to the shape of each multilayer circuit board.

【0033】次に上述の未焼成状態の大型基板を大気雰
囲気や中性雰囲気で焼成処理する。焼成処理条件は、内
部配線材料、絶縁材料によって決定される。
Next, the large substrate in the unfired state is fired in an air atmosphere or a neutral atmosphere. The firing conditions are determined by the internal wiring material and the insulating material.

【0034】この工程で、多層基板1となる各基板領域
には、内部配線層4、ビアホール導体3が形成され、表
面には表面配線層2が形成された大型多層回路基板が得
られることになる。また、基板1表面にはキャビティ7
が形成され、キャビティ7の底面部には搭載用電極パッ
ド71が形成されている。
In this step, a large-sized multilayer circuit board having the internal wiring layer 4 and the via-hole conductor 3 formed in each substrate region to be the multilayer substrate 1 and the surface wiring layer 2 formed on the surface is obtained. Become. Further, a cavity 7 is provided on the surface of the substrate 1.
Are formed, and mounting electrode pads 71 are formed on the bottom surface of the cavity 7.

【0035】その後、必要に応じて、表面配線層2に接
続する厚膜抵抗素子や所定形状の絶縁保護膜を形成す
る。
Thereafter, if necessary, a thick-film resistance element connected to the surface wiring layer 2 and an insulating protective film having a predetermined shape are formed.

【0036】次に、基板1表面のキャビティ7周辺に形
成された表面配線層2上に、回路構成部品8を半田付け
等により実装する。
Next, the circuit component 8 is mounted on the surface wiring layer 2 formed around the cavity 7 on the surface of the substrate 1 by soldering or the like.

【0037】次に、キャビティ7内に弾性表面波フィル
タ5など電子部品素子やICチップを実装する。例え
ば、弾性表面波フィルタ5の実装面側電極部分にバンプ
51を形成しておき、キャビティ7の搭載用電極パッド
71にバンプ51が当接するように、超音波熱圧着によ
り接合される。
Next, electronic components such as a surface acoustic wave filter 5 and an IC chip are mounted in the cavity 7. For example, the bumps 51 are formed on the mounting surface side electrode portion of the surface acoustic wave filter 5 and are bonded by ultrasonic thermocompression so that the bumps 51 abut the mounting electrode pads 71 of the cavity 7.

【0038】また、絶縁蓋体6は、表面回路パターン6
2を厚膜技法や銅箔形成方法によって形成した基板を用
いる。
The insulating cover 6 is provided with a surface circuit pattern 6.
2 is a substrate formed by a thick film technique or a copper foil forming method.

【0039】次に、上述の絶縁蓋体6を用いて、キャビ
ティ7の開口を気密封止する。すなわち、キャビティ7
の段差部7a上に周設するように低融点ガラスや熱硬化
性接着剤などのシール部材64を滴下法などにより塗布
後、シール部材64をはさむように絶縁蓋体6をキャビ
ティ7の段差部7aに載置して、荷重をあたえながら、
加熱処理して気密封止を行う。次に、他の回路構成部品
60を絶縁蓋体6の表面回路パターン62上に半田付け
等により実装する。
Next, the opening of the cavity 7 is hermetically sealed using the above-mentioned insulating lid 6. That is, the cavity 7
A sealing member 64 such as a low-melting glass or a thermosetting adhesive is applied by a dropping method or the like so as to be provided on the stepped portion 7a, and then the insulating lid 6 is placed so that the sealing member 64 is sandwiched. Place on 7a and give the load,
Heat treatment is performed to perform hermetic sealing. Next, another circuit component 60 is mounted on the surface circuit pattern 62 of the insulating lid 6 by soldering or the like.

【0040】その後、絶縁蓋体6上の表面回路パターン
62と基板1上の表面配線層2間を、例えばAuワイヤ
やAlワイヤなどのボンディングワイヤ63で接続し
て、絶縁蓋体6側の表面回路パターン62と、多層基板
1側の表面配線層2を電気的に接続する。
After that, the surface circuit pattern 62 on the insulating lid 6 and the surface wiring layer 2 on the substrate 1 are connected by bonding wires 63 such as Au wire or Al wire, and the surface on the insulating lid 6 side is connected. The circuit pattern 62 is electrically connected to the surface wiring layer 2 on the multilayer substrate 1 side.

【0041】また、別の電気的な接続として、絶縁蓋体
6の表面回路パターン62と多層基板1の表面配線層2
との間に、2つの端子電極を有するチップ状電子部品7
0を実装して、表面回路パターン62と表面配線層2を
電気的に接続する。
As another electrical connection, the surface circuit pattern 62 of the insulating lid 6 and the surface wiring layer 2 of the multilayer substrate 1 are used.
And a chip-like electronic component 7 having two terminal electrodes
0, and the surface circuit pattern 62 and the surface wiring layer 2 are electrically connected.

【0042】最後に、各基板領域毎に大型基板を分離
し、多層回路基板10を得る。
Finally, a large-sized substrate is separated for each substrate region, and a multilayer circuit board 10 is obtained.

【0043】尚、上述の電気的な接続方法としては、ボ
ンディングワイヤ63、チップ状電子部品70を用いて
接続した状態を図1、図2では示しているが、いずれか
一方の電気的に接続方法を用いてもよい。
As the above-described electrical connection method, FIGS. 1 and 2 show a state of connection using the bonding wire 63 and the chip-shaped electronic component 70. A method may be used.

【0044】かくして本発明の多層回路基板10によれ
ば、絶縁蓋体6上に表面回路パターン62を形成したた
め、多層回路基板10全体の表面配線を形成する領域が
増大し、従来のデットスペースを削減でき、高密度実装
が可能となり、小型化が可能となる。
Thus, according to the multilayer circuit board 10 of the present invention, since the surface circuit pattern 62 is formed on the insulating lid 6, the area for forming the surface wiring of the entire multilayer circuit board 10 is increased, and the conventional dead space is reduced. Therefore, high-density mounting becomes possible and miniaturization becomes possible.

【0045】また、上述の実施例では、絶縁蓋体6側の
表面回路パターン62と多層基板1の表面配線層2との
接続が目視により確認でき、従来のように絶縁蓋体の裏
面で電気的な接続を行っていたものに比較して、接続信
頼性が大きく向上する。また、キャビティ7の段差部7
aと絶縁蓋体6の裏面外周部との間にシール部材64を
配置しており、絶縁蓋体6の表面回路パターン62を形
成し、しかも、この絶縁蓋体6によってキャビティ7を
気密的に封止することができる。
In the above-described embodiment, the connection between the surface circuit pattern 62 on the insulating lid 6 side and the surface wiring layer 2 of the multilayer substrate 1 can be visually confirmed. The connection reliability is greatly improved as compared with the case where a conventional connection is made. In addition, the step 7 of the cavity 7
A sealing member 64 is disposed between the insulating lid 6 and the outer peripheral portion of the rear surface of the insulating lid 6 to form a surface circuit pattern 62 of the insulating lid 6, and the insulating lid 6 seals the cavity 7 in an airtight manner. Can be sealed.

【0046】図3は、本発明の多層回路基板の他の実施
の形態の断面図である。図3の実施例は、多層基板1側
の所定配線と、絶縁蓋体6側の回路パターン62との電
気的な接続が、段差部7aに形成した電極パッド(内部配
線層2から延出する)24と、絶縁蓋体6の端面に形成し
た端面電極13とによって達成されている。この端面電
極13は、例えば絶縁蓋体6の端面に厚み方向に延びる
凹部を形成し、この凹部の内壁面に端子電極13を形成
する。この端子電極13は、絶縁蓋体6の表面に形成し
た回路パターン62や回路構成部品60と基板の内部や
基板の端面を介して接続されている。この接続状態にお
いては、多層基板1のキャビティ7と絶縁蓋体6との間
隙から、絶縁蓋体6の端面の端子電極13と、キャビテ
ィ7の段差部7aとの電気的接続を目視することができ
る。この電気的な接続は、例えば半田や導電性樹脂ペー
ストなどで行われる。
FIG. 3 is a sectional view of another embodiment of the multilayer circuit board of the present invention. In the embodiment of FIG. 3, the electrical connection between the predetermined wiring on the multilayer substrate 1 side and the circuit pattern 62 on the insulating lid 6 side is based on the electrode pad (extending from the internal wiring layer 2) formed on the stepped portion 7 a. ) 24 and the end face electrode 13 formed on the end face of the insulating lid 6. The end surface electrode 13 has, for example, a concave portion extending in the thickness direction on the end surface of the insulating lid 6, and the terminal electrode 13 is formed on the inner wall surface of the concave portion. The terminal electrode 13 is connected to a circuit pattern 62 or a circuit component 60 formed on the surface of the insulating lid 6 via the inside of the substrate or an end surface of the substrate. In this connection state, the electrical connection between the terminal electrode 13 on the end face of the insulating lid 6 and the step 7a of the cavity 7 can be visually observed from the gap between the cavity 7 of the multilayer substrate 1 and the insulating lid 6. it can. This electrical connection is made with, for example, solder or conductive resin paste.

【0047】また、図4(a)は、図1、図2に示したよ
うに多層回路基板10の表面側で、多層基板1の表面配
線層2と絶縁蓋体6と表面回路パターン62との電気的
な接続を施したもので、別のシール部材を用いた状態を
示す。即ち、図1、図2では、低融点ガラスや熱硬化性
樹脂を用いているのに対して、本実施例では、キャビテ
ィ7の段差部7a上にシール導体膜23を周設するよう
に形成し、同時に、絶縁蓋体6の裏面外周部にもシール
導体膜21を周設するように形成している。そして、そ
の両シール導体膜21、23を半田などによって封止し
ている。尚、絶縁蓋体6裏面全面にシール導体膜21を
形成しても構わない。特に、このシール導体膜21をグ
ランド電位とすることにより、キャビティ7内に収容し
た電子部品素子5やICチップなどを不要な電磁波から
の保護することができる。
FIG. 4A shows the surface wiring layer 2 of the multilayer substrate 1, the insulating lid 6, the surface circuit pattern 62, and the surface of the multilayer circuit substrate 10 as shown in FIGS. And shows a state in which another seal member is used. That is, in FIGS. 1 and 2, a low-melting glass or a thermosetting resin is used. At the same time, the seal conductor film 21 is also formed around the outer peripheral portion of the back surface of the insulating lid 6. The two seal conductor films 21 and 23 are sealed with solder or the like. Note that the seal conductor film 21 may be formed on the entire back surface of the insulating lid 6. Particularly, by setting the sealing conductor film 21 to the ground potential, the electronic component element 5 and the IC chip housed in the cavity 7 can be protected from unnecessary electromagnetic waves.

【0048】また、図4(b)は、図3の多層回路基板
における封止部分を示す拡大図である。図3の多層回路
基板10は、絶縁蓋体6の端面でもって、多層基板1側
と電気的な接続を行うため、この絶縁蓋体6と多層基板
1との封止について細心の注意が必要となる。即ち、こ
の封止方法は、特に気密封止を達成しようとする場合に
は、図4(a)に示すような半田接合による封止は避け
るべきである。即ち、封止用の半田が広がり、絶縁蓋体
6の端面部分の端面電極13にまで到達したら、電気的
接続に致命的な問題が発生するためである。このため、
図4(b)においては、低融点ガラスや熱硬化性樹脂な
どのシール部材64を用いて封止することが重要であ
る。このような構造では、絶縁蓋体6側と多層基板1側
の電気的接続は半田接合によって行い、気密封止を絶縁
性材料で行っている。ここで、重要なことは、段差部7
a上において、気密封止領域が、電気的な接続領域(絶
縁蓋体の端面)よりも内側に位置されていることが重要
となる。
FIG. 4B is an enlarged view showing a sealed portion in the multilayer circuit board of FIG. Since the multilayer circuit board 10 shown in FIG. 3 is electrically connected to the multilayer substrate 1 by the end face of the insulating lid 6, it is necessary to pay close attention to the sealing between the insulating lid 6 and the multilayer substrate 1. Becomes That is, this sealing method should avoid the sealing by solder bonding as shown in FIG. 4A, particularly when achieving hermetic sealing. That is, when the solder for sealing spreads and reaches the end face electrode 13 on the end face portion of the insulating lid 6, a fatal problem occurs in the electrical connection. For this reason,
In FIG. 4B, it is important to seal using a sealing member 64 such as a low-melting glass or a thermosetting resin. In such a structure, the electrical connection between the insulating lid 6 and the multilayer substrate 1 is performed by soldering, and hermetic sealing is performed with an insulating material. Here, what is important is that the step 7
On a, it is important that the hermetic sealing region is located inside the electrical connection region (the end face of the insulating lid).

【0049】なお、本発明は上記の例に限定されるもの
ではなく、本発明の要旨を逸脱しない範囲で種々の変更
や改良を施すことは何ら差し支えない。
It should be noted that the present invention is not limited to the above-described example, and various changes and improvements can be made without departing from the spirit of the present invention.

【0050】[0050]

【発明の効果】本発明の多層回路基板によれば、絶縁蓋
体上に表面回路パターンを形成したため、多層回路基板
表面のデットスペースを解消することができ、表面の高
密度実装が達成でき、小型化が可能となる。
According to the multilayer circuit board of the present invention, since the surface circuit pattern is formed on the insulating lid, the dead space on the surface of the multilayer circuit board can be eliminated, and high-density mounting on the surface can be achieved. The size can be reduced.

【0051】また、多層基板側の所定回路網と、絶縁蓋
体側の所定回路網との電気的な接続が、多層基板と絶縁
蓋体との表面部分で行われる、または、キャビティの段
差部上と絶縁蓋体の端面とで行われる。即ち、絶縁蓋体
の裏面側では行われていない。従って、多層回路基板の
表面側からの目視により、両者の電気的な接続が確認で
きるため、両者の電気的な接続の信頼性が向上する。ま
た、絶縁蓋体の裏面は、キャビティを気密封止するシー
ル手段により専有されるため、上述のように多層回路基
板の表面における高密度実装を維持しつつ、電子部品素
子やICチップなどを気密封止することができる。
The electrical connection between the predetermined circuit network on the multilayer substrate side and the predetermined circuit network on the insulating lid body is made at the surface of the multilayer substrate and the insulating lid body, or on the step portion of the cavity. And the end face of the insulating lid. That is, it is not performed on the back side of the insulating lid. Therefore, since the electrical connection between the two can be confirmed by visual observation from the front side of the multilayer circuit board, the reliability of the electrical connection between the two is improved. Also, since the back surface of the insulating lid is occupied by the sealing means for hermetically sealing the cavity, the electronic component elements, IC chips, and the like are kept airtight while maintaining the high-density mounting on the surface of the multilayer circuit board as described above. It can be hermetically sealed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の多層回路基板の外観斜視図である。FIG. 1 is an external perspective view of a multilayer circuit board according to the present invention.

【図2】図1の多層回路基板の断面図である。FIG. 2 is a cross-sectional view of the multilayer circuit board of FIG.

【図3】本発明の多層回路基板の他の実施形態の断面図
である。
FIG. 3 is a sectional view of another embodiment of the multilayer circuit board of the present invention.

【図4】(a)、(b)は本発明の多層回路基板の気密封止
部分の部分断面図である。
FIGS. 4A and 4B are partial cross-sectional views of a hermetically sealed portion of the multilayer circuit board of the present invention.

【図5】従来の多層回路基板における蓋体の封止前の斜
視図である。
FIG. 5 is a perspective view of a conventional multilayer circuit board before a lid is sealed.

【図6】図5の多層回路基板の断面図である。FIG. 6 is a sectional view of the multilayer circuit board of FIG. 5;

【符号の説明】[Explanation of symbols]

10、40 多層回路基板 1 基体 1a〜1f 絶縁層 2 表面配線層 3 ビアホール導体 4 内部配線層 5 電子部品素子やICチップ 6、46 絶縁蓋体 62、42 表面回路パターン 64 シール部材 63 ボンディングワイヤ 60 回路構成部品 70 チップ状電子部品 7 キャビティ 7a 段差部 13 端面電極 24 電極パッド 10, 40 Multilayer circuit board 1 Base 1a to 1f Insulating layer 2 Surface wiring layer 3 Via hole conductor 4 Internal wiring layer 5 Electronic component element or IC chip 6, 46 Insulating lid 62, 42 Surface circuit pattern 64 Seal member 63 Bonding wire 60 Circuit component 70 Chip-shaped electronic component 7 Cavity 7a Step 13 End electrode 24 Electrode pad

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 23/12 F ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 23/12 F

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 表面に表面配線層を形成するとともに、
表面に開口を有し、内壁に段差部を有する電子部品素子
またはICチップが収容されるキャビティを形成した多
層基板と、 前記段差部に載置されキャビティの開口を封止する絶縁
蓋体とからなる多層回路基板において、 前記絶縁蓋体は、その表面に表面回路パターンが形成さ
れており、かつ該表面回路パターンが前記表面配線層に
多層基板及び絶縁蓋体の表面側で接続されていることを
特徴とする多層回路基板。
1. A method for forming a surface wiring layer on a surface,
A multilayer substrate having an opening on the surface and having a cavity for accommodating an electronic component element or an IC chip having a step on the inner wall, and an insulating lid placed on the step and sealing the opening of the cavity. In the multilayer circuit board, a surface circuit pattern is formed on a surface of the insulating lid, and the surface circuit pattern is connected to the surface wiring layer on a surface side of the multilayer substrate and the insulating lid. A multilayer circuit board characterized by the above.
【請求項2】 前記表面配線層と前記表面回路パターン
とが、ボンディングワイヤにより接続されていることを
特徴とする請求項1記載の多層回路基板。
2. The multilayer circuit board according to claim 1, wherein said surface wiring layer and said surface circuit pattern are connected by bonding wires.
【請求項3】 前記多層基板の表面と前記絶縁蓋体の表
面とが同一平面であり、かつ前記多層基板表面と前記絶
縁蓋体表面とにまたがるように少なくとも一対の端子電
極を有するチップ状電子部品を配置させるとともに、一
方の端子電極と前記表面配線層に、他方の端子電極を前
記表面回路パターンに電気的に接続させたことを特徴と
する請求項1記載の多層回路基板。
3. A chip-like electronic device wherein a surface of the multilayer substrate and a surface of the insulating lid are flush with each other, and at least a pair of terminal electrodes are provided so as to extend over the surface of the multilayer substrate and the surface of the insulating lid. 2. The multilayer circuit board according to claim 1, wherein components are arranged, and one terminal electrode and the surface wiring layer are electrically connected to each other, and the other terminal electrode is electrically connected to the surface circuit pattern.
【請求項4】 表面に表面配線層を形成するとともに、
表面に開口を有し、内壁に段差部を有する電子部品素子
またはICチップが収容されるキャビティを形成した多
層基板と、 前記段差部に載置されキャビティの開口を封止する絶縁
蓋体とからなる多層回路基板において、 前記絶縁蓋体には、表面に表面回路パターンが、端面に
端面電極が形成されているとともに、前記キャビティの
段差部上には電極パッドが形成されており、前記端面電
極と前記電極パッドとは電気的に接続されることを特徴
とする多層回路基板。
4. A method for forming a surface wiring layer on a surface,
A multilayer substrate having an opening on the surface and having a cavity for accommodating an electronic component element or an IC chip having a step on the inner wall, and an insulating lid placed on the step and sealing the opening of the cavity. In the multilayer circuit board, a surface circuit pattern is formed on a surface of the insulating lid, and an end surface electrode is formed on an end surface, and an electrode pad is formed on a step portion of the cavity. And the electrode pads are electrically connected to each other.
【請求項5】 前記段差部はキャビティの内壁全周に周
設されており、かつ該段差部上には、前記絶縁蓋体の裏
面外周部が接合されることを特徴とする請求項1または
4記載の多層回路基板。
5. The stepped portion is provided around the entire inner wall of the cavity, and the outer peripheral portion of the back surface of the insulating lid is joined to the stepped portion. 4. The multilayer circuit board according to 4.
【請求項6】 前記キャビティの開口の封止は、前記段
差部上に前記絶縁蓋体の裏面外周部を低融点ガラスまた
は熱硬化性接着剤で接着させることにより行うことを特
徴とする請求項1または4記載の多層回路基板。
6. The method according to claim 6, wherein the sealing of the opening of the cavity is performed by bonding an outer peripheral portion of a back surface of the insulating lid on the step portion with a low melting point glass or a thermosetting adhesive. 5. The multilayer circuit board according to 1 or 4.
【請求項7】 前記キャビティの開口の封止は、前記段
差部上に形成したシール導体膜と、前記絶縁蓋体の裏面
外周部に形成したシール導体膜とを半田で接合すること
により行われることを特徴とする請求項1または4記載
の多層回路基板。
7. The sealing of the opening of the cavity is performed by joining a seal conductive film formed on the step portion and a seal conductive film formed on the outer peripheral portion of the back surface of the insulating lid with solder. 5. The multilayer circuit board according to claim 1, wherein:
【請求項8】 前記キャビティの開口の封止は、前記段
差部上に形成した電極パッドの内側で行われることを特
徴とする請求項4記載の多層回路基板。
8. The multilayer circuit board according to claim 4, wherein sealing of the opening of the cavity is performed inside an electrode pad formed on the step portion.
JP2001163551A 2001-05-31 2001-05-31 Multilayer circuit board Expired - Fee Related JP3854095B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001163551A JP3854095B2 (en) 2001-05-31 2001-05-31 Multilayer circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001163551A JP3854095B2 (en) 2001-05-31 2001-05-31 Multilayer circuit board

Publications (2)

Publication Number Publication Date
JP2002359340A true JP2002359340A (en) 2002-12-13
JP3854095B2 JP3854095B2 (en) 2006-12-06

Family

ID=19006498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001163551A Expired - Fee Related JP3854095B2 (en) 2001-05-31 2001-05-31 Multilayer circuit board

Country Status (1)

Country Link
JP (1) JP3854095B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009282015A (en) * 2008-04-24 2009-12-03 Fujikura Ltd Pressure sensor module and electronic component
JP2011096927A (en) * 2009-10-30 2011-05-12 Panasonic Corp Circuit board, connector, and electronic apparatus
JP2013207070A (en) * 2012-03-28 2013-10-07 Fujitsu Ltd Laminate module
JP2016140045A (en) * 2015-01-29 2016-08-04 京セラ株式会社 Substrate for mounting electronic element and electronic apparatus
JP2019153658A (en) * 2018-03-02 2019-09-12 富士通株式会社 Board module and board module manufacturing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009282015A (en) * 2008-04-24 2009-12-03 Fujikura Ltd Pressure sensor module and electronic component
US8516892B2 (en) 2008-04-24 2013-08-27 Fujikura Ltd. Pressure sensor module and electronic component
JP2011096927A (en) * 2009-10-30 2011-05-12 Panasonic Corp Circuit board, connector, and electronic apparatus
JP2013207070A (en) * 2012-03-28 2013-10-07 Fujitsu Ltd Laminate module
JP2016140045A (en) * 2015-01-29 2016-08-04 京セラ株式会社 Substrate for mounting electronic element and electronic apparatus
JP2019153658A (en) * 2018-03-02 2019-09-12 富士通株式会社 Board module and board module manufacturing method

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