JP6122309B2 - Electronic component mounting package and electronic device using the same - Google Patents

Electronic component mounting package and electronic device using the same Download PDF

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JP6122309B2
JP6122309B2 JP2013033989A JP2013033989A JP6122309B2 JP 6122309 B2 JP6122309 B2 JP 6122309B2 JP 2013033989 A JP2013033989 A JP 2013033989A JP 2013033989 A JP2013033989 A JP 2013033989A JP 6122309 B2 JP6122309 B2 JP 6122309B2
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electronic component
terminal
space
recess
hole
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JP2014165289A (en
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江頭　秀伸
秀伸 江頭
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

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Description

本発明は、例えば光通信分野、マイクロ波通信およびミリ波通信等の分野で用いられる、高い周波数帯域で作動する各種電子部品を収納する電子素子搭載用パッケージおよびそれを用いた電子装置に関するものである。   The present invention relates to an electronic device mounting package for storing various electronic components that operate in a high frequency band, and an electronic device using the same, which are used in the fields of optical communication, microwave communication, millimeter wave communication, and the like. is there.

近年、高速通信に対する需要が急激に増加しており、高速大容量な情報伝送に関する研究開発が進められている。とりわけ、光通信装置を用いて光信号を受発信する半導体装置等の電子装置の高速化が注目されており、電子装置による光信号の高出力化と高速化が伝送容量を向上させるための課題であるとして研究開発されている。   In recent years, the demand for high-speed communication has increased rapidly, and research and development relating to high-speed and large-capacity information transmission has been promoted. In particular, increasing speed of electronic devices such as semiconductor devices that receive and transmit optical signals using optical communication devices has been attracting attention, and the issue of increasing the output and speed of optical signals by electronic devices to improve transmission capacity It has been researched and developed as being.

このような電子装置用の電子部品搭載用パッケージとして、例えば側壁に貫通孔を有する筐体と、貫通孔に充填された封止材と、封止材を貫通して筐体の側壁に固定された端子とを有しているものがある。電子部品は、筐体の上面に搭載され、例えば蓋体によって覆われる。   As an electronic component mounting package for such an electronic device, for example, a housing having a through-hole on a side wall, a sealing material filled in the through-hole, and a sealing material penetrating the sealing material are fixed to the side wall of the housing. Some have a terminal. The electronic component is mounted on the upper surface of the housing and is covered with, for example, a lid.

特開2003-78055号公報JP 2003-78055 A

上述のパッケージのように、電子部品搭載用パッケージの筐体の側壁に端子が設けられていると、端子と外部回路基板とを接続する場合に、接続時の応力により端子に上下方向の力が加わり、端子に対しててこの原理による応力が発生し、端子を封止する封止材にクラックが発生しやすいものとなり、その結果、電子部品搭載用パッケージの気密信頼性が低下する可能性があった。   When the terminal is provided on the side wall of the housing of the electronic component mounting package as in the above-described package, when the terminal and the external circuit board are connected, a vertical force is applied to the terminal due to stress at the time of connection. In addition, stress due to this principle is generated on the terminals, and cracks are likely to occur in the sealing material for sealing the terminals. As a result, the airtight reliability of the electronic component mounting package may be reduced. there were.

本発明の一つの態様によれば、電子部品搭載用パッケージは、上面と下面と貫通孔とを有している筐体と、貫通孔内に封止材により固定された端子と、貫通孔と封止材との間に設けられた筒状体と、端子に電気的に接続された配線導体および筒状体に接合された配線を有しているフレキシブル基板とを有している。筐体は、凹部を含む上面と切り欠き部を含む下面と凹部の底面から切り欠き部にかけて設けられた貫通孔とを有している。端子は、筐体から突出している上端と下端とを有し、電子部品が電気的に接続される。フレキシブル基板は、切り欠き部内に設けられている。
According to one aspect of the present invention, an electronic component mounting package includes a housing having an upper surface, a lower surface, and a through hole, a terminal fixed with a sealing material in the through hole, and a through hole. A cylindrical body provided between the sealing material and a wiring board electrically connected to the terminal and a flexible substrate having a wiring joined to the cylindrical body . The housing has an upper surface including a recess, a lower surface including a notch, and a through hole provided from the bottom of the recess to the notch. The terminal has an upper end and a lower end protruding from the housing, and the electronic component is electrically connected. The flexible substrate is provided in the notch.

本発明の他の態様によれば、電子装置は、上記構成の電子部品搭載用パッケージと、電子部品搭載用パッケージの凹部に収容された電子部品と、電子部品搭載用パッケージに接合された蓋体とを有している。   According to another aspect of the present invention, an electronic device includes an electronic component mounting package having the above configuration, an electronic component housed in a recess of the electronic component mounting package, and a lid joined to the electronic component mounting package. And have.

本発明の一つの態様によれば、電子部品搭載用パッケージは、凹部を含む上面と切り欠き部を含む下面と凹部の底面から切り欠き部にかけて設けられた貫通孔とを有している筐体と、貫通孔内に封止材により固定されており、筐体から突出した上端と下端とを有している端子と、貫通孔と封止材との間に設けられた筒状体と、端子に電気的に接続された配線導体および筒状体に接合された配線を有しており、切り欠き部内に設けられたフレキシブル基板とを有していることによって、端子とフレキシブル基板とを接続する際に、接続時の応力により端子に上下方向の力が加わったとしても、端子の長手は、接続時の応力が加わる方向と同じ上下方向に設けられており、てこの原理による応力が発生しにくいものとなり、封止材にクラックが発生するのを抑制して、その結果、電子部品搭載用パッケージの気密信頼性が向上されるものとなる。 According to one aspect of the present invention, an electronic component mounting package includes a top surface including a recess, a bottom surface including a notch, and a through hole provided from the bottom of the recess to the notch. And a terminal that is fixed by a sealing material in the through hole, has a top end and a bottom end protruding from the housing, and a cylindrical body provided between the through hole and the sealing material, It has a wiring conductor that is electrically connected to the terminal and a wiring that is joined to the cylindrical body, and has a flexible substrate provided in the notch, thereby connecting the terminal and the flexible substrate. Even when a vertical force is applied to the terminal due to the stress at the time of connection, the length of the terminal is provided in the same vertical direction as the direction at which the stress is applied at the time of connection. It becomes difficult to crack, and cracks occur in the sealing material. To the to suppress, resulting in that airtightness reliability of the electronic component mounting package is enhanced.

本発明の他の態様によれば、電子装置は、上記構成の電子部品搭載用パッケージの凹部に収容された電子部品と、電子部品搭載用パッケージに接合された蓋体とを有していることによって、信頼性が高いものとなる。   According to another aspect of the present invention, an electronic device has an electronic component housed in a recess of the electronic component mounting package having the above-described configuration, and a lid joined to the electronic component mounting package. Therefore, the reliability is high.

本発明の実施の形態の電子装置の一例を示す断面図である。It is sectional drawing which shows an example of the electronic device of embodiment of this invention. 図１に示された電子装置のＡ部の拡大図である。It is an enlarged view of the A section of the electronic device shown in FIG.

本発明の例示的な実施形態について、図面を参照して説明する。   Exemplary embodiments of the present invention will be described with reference to the drawings.

図１を参照して本発明の実施形態における電子装置について説明する。本実施形態における電子装置は、電子素子搭載用パッケージと、電子素子搭載用パッケージに収納された電子部品８と、蓋体10とを有している。   An electronic apparatus according to an embodiment of the present invention will be described with reference to FIG. The electronic device in the present embodiment includes an electronic element mounting package, an electronic component 8 housed in the electronic element mounting package, and a lid 10.

本実施形態の電子部品搭載用パッケージは、上面と下面と貫通孔２とを有している筐体１と、端子４と、フレキシブル基板７とを有している。なお、電子部品搭載用パッケージは、回路基板５と、基台６とをさらに有していてもよい。   The electronic component mounting package of the present embodiment includes a housing 1 having an upper surface, a lower surface, and a through hole 2, a terminal 4, and a flexible substrate 7. The electronic component mounting package may further include a circuit board 5 and a base 6.

筐体１は、電子部品８が収容される凹部１ａを含む上面と、切り欠き部１ｂを含む下面と、凹部１ａの底面から切り欠き部１ｂにかけて設けられた貫通孔２とを有している。   The housing 1 has an upper surface including a recess 1a in which the electronic component 8 is accommodated, a lower surface including a notch 1b, and a through hole 2 provided from the bottom of the recess 1a to the notch 1b. .

筐体１は、電子部品８を収容するための収容部材として機能するとともに電子素子搭載用パッケージの外部との電磁的遮蔽を行なう機能を有しており、Ｆｅ−Ｎｉ−Ｃｒ合金(
ＪＩＳ規格のＳＵＳ304、ＳＵＳ310等)、Ｆｅ-Ｎｉ-Ｃｒ-Ｍｏ合金(ＪＩＳ規格のＳＵＳ303、ＳＵＳ316等)等のステンレス鋼、Ｆｅ−Ｎｉ−Ｃｏ合金、Ｃｕ−Ｚｎ合金等の金属材料から成る。 The housing 1 functions as a housing member for housing the electronic component 8 and has a function of performing electromagnetic shielding from the outside of the electronic element mounting package. Fe—Ni—Cr alloy (
JIS standard SUS304, SUS310, etc.), Fe-Ni-Cr-Mo alloys (JIS standard SUS303, SUS316, etc.) and other stainless steels, Fe-Ni-Co alloys, Cu-Zn alloys, and other metal materials.

例えば、筐体１の凹部１ａに収容される電子部品８が、強誘電体素子であるＬＮ(ニオ
ブ酸リチウム)による変調素子（以下、ＬＮ素子という）の場合、ＬＮ素子の熱膨張係数15.4×10−６／℃と近似しているＳＵＳ303(熱膨張係数14.6×10−６／℃)、ＳＵＳ304(熱膨張係数17.3×10−６／℃)、ＳＵＳ310(熱膨張係数15.8×10−６／℃)、ＳＵＳ316(熱膨張係数16.0×10−６／℃)等のＦｅ−Ｎｉ−Ｃｒ合金、Ｆｅ−Ｎｉ−Ｃｒ−Ｍｏ合金の金
属材料を用いて、筐体１を作製することが好ましい。この場合、筐体１の凹部１ａにＬＮ素子を収容して電子装置とした場合、筐体１と電子部品８との熱膨張係数が近似しているため、電子部品８が作動した際に発生する熱、または電子部品８を筐体１へろう材を介して実装するための加熱により、熱膨張係数の差に起因する応力で、電子部品８が筐体１から剥がれたりすることがなくなるので好ましい。 For example, when the electronic component 8 housed in the recess 1a of the housing 1 is a modulation element (hereinafter referred to as an LN element) using a ferroelectric element LN (lithium niobate), the thermal expansion coefficient of the LN element is 15.4 × 10 -6 / ° C. and in which SUS303 (thermal expansion coefficient of 14.6 × 10 -6 / ℃) which approximates, SUS304 (thermal expansion coefficient of 17.3 × 10 -6 / ℃), SUS310 ( thermal expansion coefficient of 15.8 × 10 -6 / ℃ ), SUS316 (thermal expansion coefficient 16.0 × 10 −6 / ° C.) or the like, it is preferable to produce the casing 1 using a metal material of Fe—Ni—Cr alloy or Fe—Ni—Cr—Mo alloy. In this case, when an LN element is housed in the recess 1a of the housing 1 to form an electronic device, the thermal expansion coefficients of the housing 1 and the electronic component 8 are approximated, and thus generated when the electronic component 8 is activated. The electronic component 8 is not peeled off from the casing 1 due to the stress caused by the difference in thermal expansion coefficient due to the heat to be applied or the heating for mounting the electronic component 8 to the casing 1 via the brazing material. preferable.

また、筐体１は、筐体１を形成する金属材料のインゴットに圧延加工、打ち抜き加工等の従来周知の金属加工法を施して基体および枠体をとし、これら基体と枠体とを接合することによって所定の形状に製作される。また、その表面に耐蝕性に優れ、かつ、ろう材との濡れ性に優れる金属を被着させておくことが好ましい。具体的には厚さ0.5〜９μｍの
Ｎｉ層と厚さ0.5〜９μｍのＡｕ層を順次めっき法により被着させておくのがよく、筐体
１が酸化腐食するのを有効に防止するとともに、筐体１の凹部１ａの底面に回路基板５を載置するための基台６を強固に接着固定させることができる。なお、基体および枠体は一
体成形することが好ましい。この一体成形の方法としては、上述したＦｅ−Ｎｉ−Ｃｒ合金、Ｆｅ−Ｎｉ−Ｃｒ−Ｍｏ合金等の金属材料のインゴットに切削加工、放電加工等の従来周知の金属加工法を施すことにより所定の形状に製作することができる。基体と枠体とを一体成形した場合は、組み立て時の接合ずれを生じるという不具合が発生することがなくなるので好ましい。 In addition, the casing 1 is formed by applying a conventionally known metal processing method such as rolling or punching to an ingot of a metal material forming the casing 1 to form a base body and a frame body, and the base body and the frame body are joined. Thus, it is manufactured in a predetermined shape. Further, it is preferable to deposit a metal having excellent corrosion resistance and excellent wettability with the brazing material on the surface. Specifically, a Ni layer having a thickness of 0.5 to 9 μm and an Au layer having a thickness of 0.5 to 9 μm are preferably sequentially deposited by a plating method, effectively preventing the casing 1 from being oxidatively corroded, The base 6 for placing the circuit board 5 on the bottom surface of the recess 1a of the housing 1 can be firmly bonded and fixed. In addition, it is preferable to integrally mold the base body and the frame body. As this integral molding method, the metal material ingot such as Fe-Ni-Cr alloy or Fe-Ni-Cr-Mo alloy described above is subjected to a conventionally known metal working method such as cutting or electric discharge machining. It can be manufactured in the shape of When the base body and the frame body are integrally molded, it is preferable that the problem of joining displacement during assembly does not occur.

筐体１は、凹部１ａの底面から切り欠き部１ｂにかけて貫通孔２が形成され、端子４が貫通孔２内を通っているとともに筐体１に封止材３により固定されており、端子４の上端が筐体１の凹部１ａの底面から上方へ突出しているとともに端子４の下端が筐体１の切り欠き部１ｂから下方へ突出しており、電子部品８が端子４に電気的に接続されている。   The casing 1 has a through hole 2 formed from the bottom surface of the recess 1a to the notch 1b, the terminal 4 passes through the through hole 2, and is fixed to the casing 1 with the sealing material 3, and the terminal 4 And the lower end of the terminal 4 protrudes downward from the notch portion 1b of the housing 1 so that the electronic component 8 is electrically connected to the terminal 4. ing.

貫通孔２は、凹部１ａの底面側において空間が設けられるように他の貫通孔２ａを有していてもよく、他の貫通孔２ａの孔径が貫通孔２の孔径より小さいものとすると、インピーダンスがより整合されたものとなり好ましい。   The through-hole 2 may have another through-hole 2a so that a space is provided on the bottom surface side of the recess 1a. If the diameter of the other through-hole 2a is smaller than the diameter of the through-hole 2, the impedance Becomes more consistent and is preferable.

封止材３は、ガラス、セラミックスなどの絶縁性の無機材料から成り、端子４と筐体１との絶縁性を確保するとともに、端子４を筐体１の貫通孔２内に固定する機能を有する。このような封止材３の例としては、ホウケイ酸ガラス，ソーダガラス等のガラスおよびこれらのガラスに封止材３の熱膨張係数、比誘電率を調整するためのセラミックフィラーを加えたものが挙げられ、インピーダンスマッチングのためにその比誘電率を適宜選択する。比誘電率を低下させるフィラーとしては、酸化リチウム等が挙げられる。例えば、特性インピーダンスを50Ωとするには、貫通孔２の内径が1.75ｍｍで端子４の外径が0.2ｍｍ
の場合であれば、封止材３の比誘電率が6.8であるものを用いればよい。また、貫通孔２
の内径が1.65ｍｍで端子４の外径が0.25ｍｍの場合であれば、封止材３の比誘電率が５であるものを用いればよい。 The sealing material 3 is made of an insulating inorganic material such as glass or ceramics, and has a function of securing the insulation between the terminal 4 and the housing 1 and fixing the terminal 4 in the through hole 2 of the housing 1. Have. Examples of such a sealing material 3 include glass such as borosilicate glass and soda glass, and a glass filler added with a ceramic filler for adjusting the thermal expansion coefficient and relative dielectric constant of the sealing material 3. The relative dielectric constant is appropriately selected for impedance matching. Examples of the filler that lowers the dielectric constant include lithium oxide. For example, in order to set the characteristic impedance to 50Ω, the inner diameter of the through hole 2 is 1.75 mm and the outer diameter of the terminal 4 is 0.2 mm.
In this case, the sealing material 3 having a relative dielectric constant of 6.8 may be used. Also, the through hole 2
In the case where the inner diameter is 1.65 mm and the outer diameter of the terminal 4 is 0.25 mm, the sealing material 3 having a relative dielectric constant of 5 may be used.

端子４を貫通孔２に充填された封止材３を貫通して固定するには、例えば、封止材３がガラスから成る場合は、周知の粉体プレス法、押し出し成形法等を用いてガラス粉末を成形して、内径を端子４の外径に合わせ、外径を貫通孔２の内径に合わせた筒状の成形体を作製し、この封止材３の成形体を貫通孔２に挿入し、さらに端子４をこの封止材３の孔に挿通し、しかる後、所定の温度に加熱して封止材３を溶融させた後、冷却して固化させることにより行なうことができる。これにより、封止材３により貫通孔２が気密に封止されるとともに、封止材３によって端子４が筐体１と絶縁されて固定され、同軸線路が形成される。   To fix the terminal 4 through the sealing material 3 filled in the through-hole 2, for example, when the sealing material 3 is made of glass, a known powder pressing method, extrusion molding method, or the like is used. A glass powder is molded to make a cylindrical molded body whose inner diameter is matched with the outer diameter of the terminal 4 and whose outer diameter is matched with the inner diameter of the through hole 2, and this molded body of the sealing material 3 is made into the through hole 2. Further, the terminal 4 can be inserted into the hole of the sealing material 3 and then heated to a predetermined temperature to melt the sealing material 3 and then cooled and solidified. Thereby, the through hole 2 is hermetically sealed by the sealing material 3, and the terminal 4 is insulated and fixed from the housing 1 by the sealing material 3, thereby forming a coaxial line.

また、貫通孔２と封止材３との間に筒状体３ａを設けてもよく、筒状体３ａは、筐体１と同様の金属材料からなり、加工方法も筐体１と同様である。   Further, a cylindrical body 3 a may be provided between the through hole 2 and the sealing material 3, and the cylindrical body 3 a is made of the same metal material as that of the casing 1, and the processing method is the same as that of the casing 1. is there.

端子４は、Ｆｅ−Ｎｉ−Ｃｏ合金、Ｆｅ−Ｎｉ合金等の金属から成り、例えば端子４がＦｅ−Ｎｉ−Ｃｏ合金から成る場合は、この合金のインゴット（塊）に圧延加工、打ち抜き加工等の金属加工方法を施すことによって、長さが1.5〜22ｍｍ、直径が0.1〜0.5ｍｍ
の線状に製作される。 The terminal 4 is made of a metal such as an Fe—Ni—Co alloy or an Fe—Ni alloy. For example, when the terminal 4 is made of an Fe—Ni—Co alloy, the alloy ingot is rolled, punched, or the like. By applying the metal processing method, the length is 1.5-22mm, the diameter is 0.1-0.5mm
It is manufactured in the shape of a line.

端子４の直径が0.1ｍｍより小さい場合は、端子４が曲がりやすいものになり取り扱い
上の少しの不注意でも端子４が曲がってしまいやすくなる。端子４が曲がってしまうと、エア同軸部を有する場合は、この部分でのインピーダンスが狂いやすくなり、また、外部回路との接続の作業性が低下する場合がある。また端子４の直径が0.5ｍｍを超えると、
インピーダンス整合を行うために必要な貫通孔２および挿通孔６ａの径が不要に大きくなるため、電子装置が小型化し難くなるので、端子４の直径は0.1〜0.5ｍｍであるのが好ましい。 When the diameter of the terminal 4 is smaller than 0.1 mm, the terminal 4 is easily bent, and the terminal 4 is easily bent even with a little carelessness in handling. If the terminal 4 is bent, if it has an air coaxial part, the impedance at this part tends to go wrong, and the workability of connection with an external circuit may be reduced. If the diameter of the terminal 4 exceeds 0.5 mm,
Since the diameters of the through hole 2 and the insertion hole 6a necessary for impedance matching become unnecessarily large, and the electronic device is difficult to downsize, the diameter of the terminal 4 is preferably 0.1 to 0.5 mm.

電子部品搭載用パッケージは、切り欠き部１ｂ内にフレキシブル基板７が設けられており、端子４の下端がフレキシブル基板７に設けられた配線導体７ａにろう材４ａを介して電気的に接続されている。   In the electronic component mounting package, a flexible substrate 7 is provided in the notch 1b, and the lower end of the terminal 4 is electrically connected to the wiring conductor 7a provided on the flexible substrate 7 via the brazing material 4a. Yes.

このような構成により、端子４とフレキシブル基板７とを接続する場合に、接続時の応力により端子４に上下方向の力が加わったとしても、端子４の長手は、接続時の応力が加わる方向と同じ上下方向に設けられており、てこの原理による応力が発生しにくいものとなり、封止材３にクラックが発生するのを抑制して、その結果、電子部品搭載用パッケージの気密信頼性が向上されるものとなる。また、端子４と接続する基板に柔軟性を有するフレキシブル基板７を用いているので、端子４とフレキシブル基板７とを接続する場合に、端子４に加わる接続時の衝撃が緩和されるものとなり、封止材３にクラックが発生するのを抑制することが可能となる。   With such a configuration, when the terminal 4 and the flexible substrate 7 are connected, even if a vertical force is applied to the terminal 4 due to the stress at the time of connection, the length of the terminal 4 is the direction in which the stress at the time of connection is applied. The stress due to the lever principle is less likely to be generated, and the generation of cracks in the sealing material 3 is suppressed. As a result, the airtight reliability of the electronic component mounting package is improved. It will be improved. In addition, since the flexible substrate 7 having flexibility is used for the substrate connected to the terminal 4, when connecting the terminal 4 and the flexible substrate 7, the impact at the time of connection applied to the terminal 4 is reduced. It becomes possible to suppress the generation of cracks in the sealing material 3.

また、切り欠き部１ｂは第１の空間１ｂａと第２の空間１ｂｂとを有し、第２の空間１ｂｂは第１の空間１ｂａの上方に設けられており、フレキシブル基板７が第１の空間１ｂａ内に設けられて、貫通孔２とフレキシブル基板７との間に第２の空間１ｂｂによる空隙が設けられている場合には、端子４とフレキシブル基板７に設けられた配線導体７ａとを接続する箇所の周辺に空間が設けられたものとなり、端子４とフレキシブル基板７に設けられた配線導体７ａとを接続するろう材４ａにフィレットが形成されたものとすることが可能となり、端子４とフレキシブル基板７とが強固に接合されたものとすることができ、好ましい。また、貫通孔２と封止材３との間に筒状体３ａを設けている場合において、筒状体３ａとフレキシブル基板７に設けられた配線とをろう材４ａを介して接合し、ろう材４ａにフィレットが形成されたものとすると、上述と同様に筒状体３ａとフレキシブル基板７とが強固に接合されたものとすることができ、好ましい。   The cutout portion 1b has a first space 1ba and a second space 1bb. The second space 1bb is provided above the first space 1ba, and the flexible substrate 7 is provided in the first space. When the gap by the second space 1bb is provided between the through hole 2 and the flexible substrate 7, the terminal 4 and the wiring conductor 7a provided on the flexible substrate 7 are connected. It is possible to provide a space around the location where the terminal 4 and the wiring conductor 7a provided on the flexible substrate 7 are formed with a fillet formed on the brazing material 4a. The flexible substrate 7 can be firmly bonded, which is preferable. When the cylindrical body 3a is provided between the through hole 2 and the sealing material 3, the cylindrical body 3a and the wiring provided on the flexible substrate 7 are joined via the brazing material 4a. If the fillet is formed on the material 4a, the cylindrical body 3a and the flexible substrate 7 can be firmly joined in the same manner as described above, which is preferable.

また、筐体１の下面には他の端子が接合され、端子４を信号端子として用い、他の端子を接地端子として用いてもよい。他の端子は、端子４と同様にして作製してもよく、筐体１の下面にろう材等を用いて接合される。位置決めの容易性と接合強度の向上のために、予め筐体１の下面に穴を形成しておき、その穴に他の端子を挿入して接合してもよい。また、同様の理由で、筐体１の下面に当接するように他の端子に鍔をつけて、接合面積をより大きくしてもよい。また、他の端子として、はんだ、導電性接着剤等の導電性の接合材を用いてもよい。このようにして筐体１に他の端子を接合することにより、他の端子をフレキシブル基板７の接地配線導体に接続した際には、筐体１が接地導体としても機能する。また、他の端子は、端子４を挟むように２箇所を筐体１およびフレキシブル基板７の接地配線導体に接続され、フレキシブル基板７の配線導体７ａの両側に配置された接地配線導体にろう材等で接合されるようにして、コプレナー線路を構成してもよい。   Further, another terminal may be bonded to the lower surface of the housing 1, and the terminal 4 may be used as a signal terminal and the other terminal may be used as a ground terminal. Other terminals may be manufactured in the same manner as the terminals 4 and are joined to the lower surface of the housing 1 using a brazing material or the like. In order to improve positioning ease and bonding strength, a hole may be formed in the lower surface of the housing 1 in advance, and another terminal may be inserted into the hole for bonding. Further, for the same reason, the joining area may be increased by attaching a flange to the other terminal so as to contact the lower surface of the housing 1. Moreover, you may use conductive joining materials, such as a solder and a conductive adhesive, as another terminal. By joining other terminals to the housing 1 in this way, the housing 1 also functions as a ground conductor when the other terminals are connected to the ground wiring conductor of the flexible substrate 7. The other terminals are connected to the ground wiring conductors of the casing 1 and the flexible substrate 7 at two locations so as to sandwich the terminals 4, and the brazing material is connected to the ground wiring conductors arranged on both sides of the wiring conductor 7 a of the flexible substrate 7. The coplanar lines may be configured so as to be joined together.

基台６および電子部品８は筐体１の凹部１ａの底面に接合されており、導体線路５ｂを有する回路基板５が基台６の上面に載置されるとともに接合されている。   The base 6 and the electronic component 8 are joined to the bottom surface of the recess 1a of the housing 1, and the circuit board 5 having the conductor line 5b is placed on and joined to the top surface of the base 6.

回路基板５は、絶縁基板５ａがアルミナ（Ａｌ２Ｏ３）セラミックスまたは窒化アルミニウム（ＡｌＮ）セラミックス絶縁基板５ａ等のセラミックスから成り、インピーダンス整合用の基板として機能する。回路基板５は、絶縁基板５ａの上面に高周波信号の伝送線路としての導体線路５ｂが形成され、絶縁基板５ａの下面には、接地導体５ｃが形成されている。この接地導体５ｃは、Ａｕ−Ｓｎ合金等の低融点ろう材を介して基台６の上面に接合している。このように、回路基板５は、絶縁基板５ａと導体線路５ｂと接地導体５ｃとで構成されている。 In the circuit board 5, the insulating substrate 5a is made of ceramics such as alumina (Al 2 O 3 ) ceramics or aluminum nitride (AlN) ceramics insulating substrate 5a, and functions as a substrate for impedance matching. In the circuit board 5, a conductor line 5b as a high-frequency signal transmission line is formed on the upper surface of the insulating substrate 5a, and a ground conductor 5c is formed on the lower surface of the insulating substrate 5a. The ground conductor 5c is joined to the upper surface of the base 6 through a low melting point brazing material such as an Au—Sn alloy. Thus, the circuit board 5 includes the insulating substrate 5a, the conductor line 5b, and the ground conductor 5c.

導体線路５ｂは、端子４と同じ例えば50Ωのインピーダンスとなるように形成されたマ
イクロストリップ線路であり、その一端側は電子部品８とボンディングワイヤ９を介して接続され、他端側は端子４の上端に半田を介して接合されることにより、端子４と電子部品８とが電気的に接続される。また、接地電位（グランド）は、フレキシブル基板７の接地配線導体から筐体１と基台６を介して回路基板５の下面の接地導体５ｃとろう材等を介して電気的に接続している。回路基板５の導体線路５ｂの特性インピーダンスを50Ωとするには、マイクロストリップ構造の回路基板５の場合であれば、誘電率9.5である96％酸
化アルミニウム質焼結体からなり、厚みが0.3ｍｍである絶縁基板５ａの下面に接地導体
５ｃを形成し、上面の導体線路５ｂを、幅が0.3ｍｍで厚みが４μｍのものとすればよく
、絶縁基板５ａが同じ材料からなり、厚みが0.5ｍｍである場合には、導体線路５ｂを厚
みが４μｍで幅が0.5ｍｍのものとすればよい。 The conductor line 5b is a microstrip line formed to have the same impedance as, for example, 50Ω as the terminal 4, and one end side of the conductor line 5b is connected to the electronic component 8 via the bonding wire 9, and the other end side is connected to the terminal 4. The terminal 4 and the electronic component 8 are electrically connected by being joined to the upper end via solder. The ground potential (ground) is electrically connected from the ground wiring conductor of the flexible substrate 7 via the housing 1 and the base 6 to the ground conductor 5c on the lower surface of the circuit board 5 via a brazing material or the like. . In order to set the characteristic impedance of the conductor line 5b of the circuit board 5 to 50Ω, in the case of the circuit board 5 having a microstrip structure, the circuit board 5 is made of a 96% aluminum oxide sintered body having a dielectric constant of 9.5 and has a thickness of 0.3 mm. The grounding conductor 5c is formed on the lower surface of the insulating substrate 5a, and the conductor line 5b on the upper surface has a width of 0.3 mm and a thickness of 4 μm. The insulating substrate 5a is made of the same material and has a thickness of 0.5 mm. In this case, the conductor line 5b may have a thickness of 4 μm and a width of 0.5 mm.

回路基板５の絶縁基板５ａは、例えばアルミナセラミックスからなる場合であれば、酸化アルミニウム，酸化マグネシウム，酸化カルシウム等の原料粉末に適当な有機バインダ，可塑剤，および溶剤を添加混合して得た泥漿物に、従来周知のドクターブレード法、カレンダーロール法等を採用することによってセラミックグリーンシート（セラミック生シート）を形成し、次にこのセラミックグリーンシートに適当な打ち抜き加工を施して所定形状となすとともに、必要に応じて複数枚を積層して成形体となし、しかる後、この成形体を約1,600℃の温度で焼成することによって製作される。この焼成後の絶縁基板５ａは
、厚みが約0.2〜0.3ｍｍであり、インピーダンスを例えば50Ωに整合させるために薄く製作される。 If the insulating substrate 5a of the circuit board 5 is made of, for example, alumina ceramics, a slurry obtained by adding and mixing an appropriate organic binder, plasticizer, and solvent to a raw material powder such as aluminum oxide, magnesium oxide, and calcium oxide. A ceramic green sheet (ceramic green sheet) is formed by adopting a conventionally known doctor blade method, calendar roll method, etc., and then a suitable punching process is performed on the ceramic green sheet to obtain a predetermined shape. If necessary, a plurality of sheets are laminated to form a molded body, and then the molded body is fired at a temperature of about 1,600 ° C. The fired insulating substrate 5a has a thickness of about 0.2 to 0.3 mm, and is manufactured thin in order to match the impedance to, for example, 50Ω.

導体線路５ｂ、接地導体５ｃは、タングステン，モリブデン，マンガン，銅，銀，パラジウム，白金，金等の金属材料からなる。   The conductor line 5b and the ground conductor 5c are made of a metal material such as tungsten, molybdenum, manganese, copper, silver, palladium, platinum, or gold.

導体線路５ｂ、接地導体５ｃは、例えばタングステンからなる場合であれば、タングステンの粉末に有機溶剤，バインダを添加混練して金属ペーストを作製し、絶縁基板５ａとなるセラミックグリーンシートに金属ペーストを所定の配線パターンとなるように、従来周知のスクリーン印刷法を用いて印刷することによって形成する。   If the conductor line 5b and the ground conductor 5c are made of tungsten, for example, an organic solvent and a binder are added to the powder of tungsten and kneaded to prepare a metal paste, and the metal paste is applied to the ceramic green sheet to be the insulating substrate 5a. The wiring pattern is formed by printing using a conventionally known screen printing method.

導体線路５ｂ、接地導体５ｃは、薄膜加工で作製することもできる。導体線路５ｂ、接地導体５ｃを薄膜加工で作製することにより、導体線路５ｂ、接地導体５ｃを密着金属層、拡散防止層および主導体層が順次積層された３層構造の導体層とすることができ、高精度なパターンを形成できるので好ましい。   The conductor line 5b and the ground conductor 5c can also be produced by thin film processing. By producing the conductor line 5b and the ground conductor 5c by thin film processing, the conductor line 5b and the ground conductor 5c can be formed into a three-layered conductor layer in which an adhesion metal layer, a diffusion prevention layer, and a main conductor layer are sequentially laminated. This is preferable because a highly accurate pattern can be formed.

導体線路５ｂ、接地導体５ｃを薄膜加工で作製する場合、例えば以下のようにして作製される。   When the conductor line 5b and the ground conductor 5c are manufactured by thin film processing, for example, they are manufactured as follows.

焼成後の絶縁基板５ａに、蒸着法，スパッタリング法，イオンプレーティング法等の薄膜形成法によって導体線路５ｂ、接地導体５ｃとなる各層（密着金属層、拡散防止層および主導体層が順次積層された３層構造の導体層）を形成する。その後レジスト膜を形成し、フォトリソ加工、エッチング等の薄膜加工によって導体線路５ｂ、接地導体５ｃを形成する。   Each layer (adhesive metal layer, diffusion prevention layer, and main conductor layer) to be the conductor line 5b and the ground conductor 5c is sequentially laminated on the fired insulating substrate 5a by thin film forming methods such as vapor deposition, sputtering, and ion plating. A three-layered conductor layer). Thereafter, a resist film is formed, and the conductor line 5b and the ground conductor 5c are formed by thin film processing such as photolithography and etching.

基台６は挿通孔６ａを設けられており、端子４が挿通孔６ａ内を挿通されて、エア同軸構造となり、端子４が筐体１の凹部１ａの底面から突出した部分において、インピーダンスの不整合が発生しにくくなり、高周波信号を良好に伝送させることが可能となる。   The base 6 is provided with an insertion hole 6a, and the terminal 4 is inserted into the insertion hole 6a to form an air coaxial structure. In the portion where the terminal 4 protrudes from the bottom surface of the recess 1a of the housing 1, impedance is not reduced. Matching is less likely to occur and high-frequency signals can be transmitted satisfactorily.

なお、筐体１は、凹部１ａの底面に第３の空間１ａａが設けられていると、筐体１の凹部１ａの底面に基台６を配置する場合に、位置決めが容易となるとともに所定の位置からのずれを防止することが可能となり、端子４および基台６の挿通孔６ａが容易に同軸構造
とすることが可能となってインピーダンスがより整合されたものとなり好ましい。 In addition, when the housing 1 is provided with the third space 1aa on the bottom surface of the recess 1a, when the base 6 is disposed on the bottom surface of the recess 1a of the housing 1, positioning becomes easy and predetermined It is possible to prevent displacement from the position, and the terminal 4 and the insertion hole 6a of the base 6 can be easily formed into a coaxial structure, which is preferable because impedance is more matched.

基台６は、貫通孔２に連通し直径が0.23〜1.15ｍｍの挿通孔６ａを有している。端子４が通る挿通孔６ａの直径は、中心に端子４が貫通することで特性インピーダンスが50Ωのエア同軸が形成されるような寸法とする。例えば、端子４の直径が0.2ｍｍの場合であれ
ば、挿通孔６ａの直径は0.46ｍｍとすればよい。 The base 6 communicates with the through-hole 2 and has an insertion hole 6a having a diameter of 0.23 to 1.15 mm. The diameter of the insertion hole 6a through which the terminal 4 passes is set such that an air coaxial with a characteristic impedance of 50Ω is formed by the terminal 4 passing through the center. For example, if the diameter of the terminal 4 is 0.2 mm, the diameter of the insertion hole 6a may be 0.46 mm.

基台６は、筐体１の凹部１ａの底面にＡｕ−Ｓｎ合金等の低融点ろう材を介して接合しており、基台６の上面には、回路基板５がＡｕ−Ｓｎ合金等の低融点ろう材を介して載置接合している。また、基台６は、筐体１の熱膨張係数と、回路基板５の熱膨張係数との中間の熱膨張係数を持つＦｅ−Ｎｉ合金等の金属から成り、温度変化によって、上面に載置する回路基板５に大きな応力が働いて割れたりすることがないようにするための緩衝材としての中継基台として機能する。すなわち、ＬＮ素子の熱膨張係数に合わせた筐体１に、直接、回路基板５を載置すると、筐体１の熱膨張係数と回路基板５の熱膨張係数との差が大きいことによる応力により、回路基板５にクラックが発生することがあるために、筐体１の上面の載置部１ｂに基台６を載置し、この基台６の上面に回路基板５を載置するという本実施形態の構成としている。   The base 6 is joined to the bottom surface of the recess 1a of the housing 1 via a low melting point brazing material such as Au—Sn alloy, and the circuit board 5 is made of Au—Sn alloy or the like on the top surface of the base 6. It is placed and bonded via a low melting point brazing material. The base 6 is made of a metal such as an Fe—Ni alloy having a thermal expansion coefficient intermediate between the thermal expansion coefficient of the housing 1 and the thermal expansion coefficient of the circuit board 5, and is placed on the upper surface by a temperature change. The circuit board 5 functions as a relay base as a cushioning material for preventing the circuit board 5 from being cracked by a large stress. That is, when the circuit board 5 is placed directly on the casing 1 that matches the thermal expansion coefficient of the LN element, the stress due to the large difference between the thermal expansion coefficient of the casing 1 and the thermal expansion coefficient of the circuit board 5 is caused. Since the circuit board 5 may be cracked, the base 6 is placed on the placement portion 1 b on the upper surface of the housing 1, and the circuit board 5 is placed on the upper surface of the base 6. The configuration of the embodiment is used.

基台６は、例えば筐体１がＳＵＳ304（熱膨張係数17.3×10−６／℃）で、回路基板５
がアルミナセラミックス（熱膨張係数6.5×10−６／℃）の場合は、筐体１および回路基
板５の中間の熱膨張係数を持つＦｅ−50Ｎｉ合金（熱膨張係数9.9×10−６／℃）の金属
材料からなることが好ましい。この場合、基台６が、筐体１および回路基板５の中間の熱膨張係数を持つことで、熱膨張係数の差によって発生する応力が回路基板５に加わることを低減し、回路基板５が割れてしまうことがなくなるので好ましい。なお、基台６は、その材料のインゴットに圧延加工、打ち抜き加工等の従来周知の金属加工法を施すことで形成できる。 The base 6 has, for example, a housing 1 made of SUS304 (thermal expansion coefficient 17.3 × 10 −6 / ° C.) and a circuit board 5
Is an alumina ceramic (coefficient of thermal expansion 6.5 × 10 −6 / ° C.), an Fe-50Ni alloy (coefficient of thermal expansion 9.9 × 10 −6 / ° C.) having an intermediate coefficient of thermal expansion between the casing 1 and the circuit board 5 It is preferable to consist of these metal materials. In this case, since the base 6 has an intermediate thermal expansion coefficient between the housing 1 and the circuit board 5, it is possible to reduce the stress generated by the difference in the thermal expansion coefficient from being applied to the circuit board 5. This is preferable because it does not break. The base 6 can be formed by subjecting an ingot of the material to a conventionally known metal processing method such as rolling or punching.

また、基台６は厚みが１〜２ｍｍであると、回路基板５にクラック等を発生するのを抑制することができ好ましい。厚みが１ｍｍ以上であると筐体１と回路基板５の熱膨張係数の差によって発生する応力を緩和することができ、厚みが２ｍｍ以下であると電子装置の高さが低いものとすることができ、装置を薄型化されたものとすることができる。伝送する周波数が高くなるにつれ、伝送特性を高めるために回路基板５の厚みを薄くし、導体線路５ｂを細く形成することが好ましいので、回路基板５を割れ難くするためには基台６は厚みが1.7〜２ｍｍがより好ましい。   In addition, it is preferable that the base 6 has a thickness of 1 to 2 mm because cracks and the like can be suppressed in the circuit board 5. When the thickness is 1 mm or more, the stress generated by the difference in thermal expansion coefficient between the housing 1 and the circuit board 5 can be relaxed, and when the thickness is 2 mm or less, the height of the electronic device is low. And the device can be made thinner. As the transmission frequency increases, it is preferable to reduce the thickness of the circuit board 5 and to form the conductor line 5b thin in order to improve the transmission characteristics. Therefore, in order to make the circuit board 5 difficult to break, the base 6 has a thickness. Is more preferably 1.7-2 mm.

また、電子部品搭載用パッケージは、基台６の側面の全面を筐体１の凹部１ａの側壁に当接されていることが好ましい。この場合、基台６の側面と枠体２の内面との間に空間１ｃが形成されてないため、そもそも共振が発生せず、共振によるノイズが導体線路５ｂを伝送する高周波信号に加わることがなく、高周波信号を良好に伝送することが可能となる。   In the electronic component mounting package, the entire side surface of the base 6 is preferably in contact with the side wall of the recess 1 a of the housing 1. In this case, since the space 1c is not formed between the side surface of the base 6 and the inner surface of the frame body 2, resonance does not occur in the first place, and noise due to resonance is added to the high-frequency signal transmitted through the conductor line 5b. Therefore, it is possible to transmit a high frequency signal satisfactorily.

また、上述のように、基台６は、その側面を凹部１ａの側壁に当接させることが好ましいが、凹部１ａの側壁と底面とがなす角部が凹状になっていると、基台６の側面の全面を凹部１ａの側壁に当接させることが困難となり、基台６の側面と凹部１ａの側壁との間に空間１ｃを有することとなる。そうすると、空間１ｃで共振が発生するおそれがあり、共振によるノイズが導体線路５ｂ中の高周波信号に加わってしまい、高周波信号を良好に伝送することが難しくなるおそれがある。このような場合、基台６の下部の角に切り欠きを形成することで、基台６の側面を凹部１ａの側壁に容易に当接させることができる。その結果、基台６の側面と凹部１ａの側壁との間の共振の発生を抑制し、高周波信号を良好に伝送することが可能となる。   Further, as described above, it is preferable that the side surface of the base 6 is in contact with the side wall of the recess 1a. However, if the corner formed by the side wall and the bottom surface of the recess 1a is concave, the base 6 It becomes difficult to bring the entire side surface of the base plate into contact with the side wall of the recess 1a, and a space 1c is formed between the side surface of the base 6 and the side wall of the recess 1a. If it does so, resonance may generate | occur | produce in the space 1c, the noise by resonance will add to the high frequency signal in the conductor line 5b, and there exists a possibility that it may become difficult to transmit a high frequency signal satisfactorily. In such a case, by forming a notch in the lower corner of the base 6, the side surface of the base 6 can be easily brought into contact with the side wall of the recess 1a. As a result, it is possible to suppress the occurrence of resonance between the side surface of the base 6 and the side wall of the recess 1a and to transmit a high-frequency signal satisfactorily.

また、基台６の側面と凹部１ａの側壁との間に空間１ｃを有する場合は、空間１ｃの幅が50μｍ以上0.1ｍｍ以下であることが好ましい。空間１ｃの幅と共振の強さとの関係は
、空間１ｃの幅の２乗に反比例して共振の強さは減少するので、空間１ｃの幅、すなわち基台６の側面と凹部１ａの側壁との間の距離が小さく、50μｍ以上であると共振が起こりにくく、共振によるノイズも小さくなり、導体線路５ｂを伝わる高周波信号が良好なものとなる。従って、空間７の幅は50μｍ以上が好ましく、また空間７の幅は大きいほど共振が弱くなるので、電気特性的には空間７の幅は大きいほど好ましいが、電子装置を小型化するために、空間７の幅は0.1ｍｍ以下とするのが好ましい。 Moreover, when it has the space 1c between the side surface of the base 6, and the side wall of the recessed part 1a, it is preferable that the width of the space 1c is 50 micrometers or more and 0.1 mm or less. The relationship between the width of the space 1c and the strength of resonance is that the strength of resonance decreases in inverse proportion to the square of the width of the space 1c. If the distance between them is small and 50 μm or more, resonance hardly occurs, noise due to resonance is also reduced, and a high-frequency signal transmitted through the conductor line 5b is good. Accordingly, the width of the space 7 is preferably 50 μm or more, and the resonance is weaker as the width of the space 7 is larger. Therefore, the width of the space 7 is preferably larger in terms of electrical characteristics. The width of the space 7 is preferably 0.1 mm or less.

蓋体10は、筐体１の上面外周部に半田付け法、シーム溶接法により接合され、電子部品８を電子素子搭載用パッケージの中に気密封止するものである。蓋体10の材料は、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属材料、アルミナセラミックス等のセラミックスから成り、筐体１の上面外周部にＡｕ−Ｓｎ合金等の低融点ろう材を介して接合したり、シーム溶接等の溶接により接合することで、電子部品８を電子素子搭載用パッケージ内に封止する。   The lid 10 is joined to the outer peripheral portion of the upper surface of the housing 1 by a soldering method or a seam welding method, and the electronic component 8 is hermetically sealed in the electronic element mounting package. The material of the lid 10 is made of a metal material such as Fe—Ni—Co alloy or ceramics such as alumina ceramics, and is joined to the outer periphery of the upper surface of the housing 1 via a low melting point brazing material such as Au—Sn alloy. The electronic component 8 is sealed in the electronic element mounting package by joining by welding such as seam welding.

本実施形態の電子部品搭載用パッケージは、端子４の上端が回路基板５の導体線路５ｂとろう材で接続されており、端子４が挿通孔６ａの中心をエア同軸でインピーダンスが例えば50Ωとなるように挿通されており、また筐体１の貫通孔２の中心にインピーダンスが50Ωとなるように封止材３で固定されている。そして、端子４の下端をフレキシブル基板７の配線導体７ａにろう材で接続し、筐体１の下面をフレキシブル基板７の接地配線導体に端子４を挟むように２箇所をろう材で接続し、コプレナー線路を構成して筐体１の外部においてもインピーダンスが50Ωとなるように形成されている。   In the electronic component mounting package of this embodiment, the upper end of the terminal 4 is connected to the conductor line 5b of the circuit board 5 by a brazing material, and the terminal 4 is air coaxial at the center of the insertion hole 6a and has an impedance of, for example, 50Ω. Moreover, it is fixed by the sealing material 3 so that the impedance becomes 50Ω at the center of the through hole 2 of the housing 1. Then, the lower end of the terminal 4 is connected to the wiring conductor 7a of the flexible substrate 7 with a brazing material, and the lower surface of the housing 1 is connected to the ground wiring conductor of the flexible substrate 7 at two locations with the brazing material, The coplanar line is formed so that the impedance is 50Ω even outside the housing 1.

１・・・・・・・筐体
１ａ・・・・・・凹部
１ｂ・・・・・・切り欠き部
１ｂａ・・・・・第１の空間
１ｂｂ・・・・・第２の空間
１ａａ・・・・・第３の空間
２・・・・・・・貫通孔
３・・・・・・・封止材
４・・・・・・・端子
５・・・・・・・回路基板
５ｂ・・・・・・導体線路
６・・・・・・・基台
７・・・・・・・フレキシブル基板
７ａ・・・・・・配線導体
８・・・・・・・電子部品
10・・・・・・・蓋体 DESCRIPTION OF SYMBOLS 1 ..... Case 1a ..... Recessed part 1b .... Notch part 1ba ... 1st space 1bb ... 2nd space 1aa ...・ ・ ・ ・ Third space 2 ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ Through hole 3 ・ ・ ・ ・ ・ ・ ・ Sealing material 4 ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ Terminal 5 ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ Circuit board 5b ・..... Conductor line 6 .... Base 7 .... Flexible substrate 7a ... Wiring conductor 8 .... Electronic parts
10 ...

Claims (4)

電子部品が収容される凹部を含む上面と、切り欠き部を含む下面と、前記凹部の底面から前記切り欠き部にかけて設けられた貫通孔とを有している筐体と、
前記貫通孔内を通っているとともに前記筐体に封止材により固定されており、前記筐体の前記凹部の底面から上方へ突出している上端と前記筐体の前記切り欠き部から下方へ突出している下端とを有し、前記電子部品が電気的に接続される端子と、
前記貫通孔と前記封止材との間に設けられた筒状体と、
前記端子に電気的に接続された配線導体および前記筒状体に接合された配線を有しており、前記切り欠き部内に設けられたフレキシブル基板とを備えていることを特徴とする電子部品搭載用パッケージ。 A housing having an upper surface including a recess in which an electronic component is accommodated, a lower surface including a notch, and a through hole provided from the bottom surface of the recess to the notch;
It passes through the through-hole and is fixed to the casing with a sealing material, and projects upward from the bottom of the recess of the casing and from the notch of the casing. And a terminal to which the electronic component is electrically connected,
A cylindrical body provided between the through hole and the sealing material;
An electronic component mounting comprising: a wiring conductor electrically connected to the terminal ; and a wiring bonded to the cylindrical body, and a flexible substrate provided in the notch For package. 前記切り欠き部は第１の空間と第２の空間とを有し、
前記第２の空間は前記第１の空間の上方に設けられ、
前記フレキシブル基板は前記第１の空間内に設けられており、
前記貫通孔と前記フレキシブル基板との間に前記第２の空間による空隙が設けられているとともに、該空隙において、前記端子と前記フレキシブル基板の前記配線導体とを接続するろう材および前記筒状体と前記配線とを接合するろう材にフィレットが形成されており、前記端子の前記下端が前記フレキシブル基板の厚み方向の途中に位置していることを特徴とする請求項１記載の電子部品搭載用パッケージ。 The notch has a first space and a second space;
The second space is provided above the first space;
The flexible substrate is provided in the first space;
A void formed by the second space is provided between the through hole and the flexible substrate, and the brazing material and the tubular body connecting the terminal and the wiring conductor of the flexible substrate in the void. 2. The electronic component mounting device according to claim 1 , wherein a fillet is formed in a brazing material that joins the wiring to the wiring, and the lower end of the terminal is located in the middle of the thickness direction of the flexible substrate . package. 前記凹部の前記底面に配置された基台と、
前記基台の上面に載置されており、前記電子部品を前記端子に電気的に接続する導体線路を有する回路基板とをさらに備えており、
前記筐体は、前記凹部の前記底面に第３の空間をさらに有しており、前記基台は、該基台の下端部分が前記第３の空間に収まるように配置されていることを特徴とする請求項１記載の電子部品搭載用パッケージ。 A base disposed on the bottom surface of the recess;
A circuit board that is placed on the upper surface of the base and has a conductor line that electrically connects the electronic component to the terminal;
The housing further includes a third space on the bottom surface of the recess, and the base is disposed so that a lower end portion of the base is accommodated in the third space. The electronic component mounting package according to claim 1. 請求項１記載の電子部品搭載用パッケージと、
前記電子部品搭載用パッケージの前記凹部に収容された電子部品と、
前記電子部品を覆うように前記電子部品搭載用パッケージに接合された蓋体とを備えることを特徴とする電子装置。 The electronic component mounting package according to claim 1;
An electronic component housed in the recess of the electronic component mounting package;
An electronic device comprising: a lid joined to the electronic component mounting package so as to cover the electronic component.
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