JP2002246374A - プラズマ処理装置とそのメンテナンス方法 - Google Patents

プラズマ処理装置とそのメンテナンス方法

Info

Publication number
JP2002246374A
JP2002246374A JP2001043686A JP2001043686A JP2002246374A JP 2002246374 A JP2002246374 A JP 2002246374A JP 2001043686 A JP2001043686 A JP 2001043686A JP 2001043686 A JP2001043686 A JP 2001043686A JP 2002246374 A JP2002246374 A JP 2002246374A
Authority
JP
Japan
Prior art keywords
gas
reaction chamber
vacuum reaction
plasma processing
gas introduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001043686A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002246374A5 (enExample
Inventor
Mikio Takebayashi
幹男 竹林
Toshiyuki Watanabe
利幸 渡辺
Ichiro Nakayama
一郎 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001043686A priority Critical patent/JP2002246374A/ja
Publication of JP2002246374A publication Critical patent/JP2002246374A/ja
Publication of JP2002246374A5 publication Critical patent/JP2002246374A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2001043686A 2001-02-20 2001-02-20 プラズマ処理装置とそのメンテナンス方法 Pending JP2002246374A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001043686A JP2002246374A (ja) 2001-02-20 2001-02-20 プラズマ処理装置とそのメンテナンス方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001043686A JP2002246374A (ja) 2001-02-20 2001-02-20 プラズマ処理装置とそのメンテナンス方法

Publications (2)

Publication Number Publication Date
JP2002246374A true JP2002246374A (ja) 2002-08-30
JP2002246374A5 JP2002246374A5 (enExample) 2005-09-08

Family

ID=18905809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001043686A Pending JP2002246374A (ja) 2001-02-20 2001-02-20 プラズマ処理装置とそのメンテナンス方法

Country Status (1)

Country Link
JP (1) JP2002246374A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040035661A (ko) * 2004-04-08 2004-04-29 이대준 패널 제진장치의 양방향전환밸브장치
US8029874B2 (en) 2008-01-22 2011-10-04 Hitachi High-Technologies Corporation Plasma processing apparatus and method for venting the same to atmosphere
CN106319482A (zh) * 2016-10-10 2017-01-11 无锡宏纳科技有限公司 增压式化学气相淀积反应腔
CN106381479A (zh) * 2016-10-10 2017-02-08 无锡宏纳科技有限公司 晶圆化学气相淀积反应装置
CN106399974A (zh) * 2016-10-10 2017-02-15 无锡宏纳科技有限公司 常压化学气相淀积反应腔

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040035661A (ko) * 2004-04-08 2004-04-29 이대준 패널 제진장치의 양방향전환밸브장치
US8029874B2 (en) 2008-01-22 2011-10-04 Hitachi High-Technologies Corporation Plasma processing apparatus and method for venting the same to atmosphere
CN106319482A (zh) * 2016-10-10 2017-01-11 无锡宏纳科技有限公司 增压式化学气相淀积反应腔
CN106381479A (zh) * 2016-10-10 2017-02-08 无锡宏纳科技有限公司 晶圆化学气相淀积反应装置
CN106399974A (zh) * 2016-10-10 2017-02-15 无锡宏纳科技有限公司 常压化学气相淀积反应腔

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