CN106381479A - 晶圆化学气相淀积反应装置 - Google Patents

晶圆化学气相淀积反应装置 Download PDF

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Publication number
CN106381479A
CN106381479A CN201610885352.9A CN201610885352A CN106381479A CN 106381479 A CN106381479 A CN 106381479A CN 201610885352 A CN201610885352 A CN 201610885352A CN 106381479 A CN106381479 A CN 106381479A
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Prior art keywords
cavity
wafer
chemical vapor
pressurizing
vapor phase
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CN201610885352.9A
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Inventor
吕耀安
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WUXI HI-NANO TECHNOLOGY Co Ltd
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WUXI HI-NANO TECHNOLOGY Co Ltd
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Priority to CN201610885352.9A priority Critical patent/CN106381479A/zh
Publication of CN106381479A publication Critical patent/CN106381479A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明涉及一种晶圆化学气相淀积反应装置，包括腔体，所述腔体中内置有导气管及用于支撑晶圆的支撑架，所述腔体的内腔包括上部的反应腔及下部的增压腔，所述导气管及支撑架位于所述反应腔中，支撑架包括一固定杆及安装于固定杆上端的夹头，晶圆安装于夹头中；所述导气管位于所述晶圆的下方并与所述增压腔连通，所述增压腔与腔体外的增压泵连接。本发明的结构简单，紧凑；采用增压方式，提高反应速度，即提高薄膜的成型速度。

Description

晶圆化学气相淀积反应装置
技术领域
本发明涉及半导体技术领域，特别涉及晶圆的化学气相淀积反应腔。
背景技术
常压化学气相淀积是指将反应气体置入反应腔中，反应气体扩散至反应腔中的晶圆表面，在晶圆表面附近的反应区发生反应形成薄膜。现有的常压化学反应腔的结构设计不合理，反应气体不能均匀的扩散至晶圆表面，导致形成的薄膜厚度不均匀。
发明内容
针对现有技术存在的上述问题，申请人进行研究及改进，提供一种晶圆化学气相淀积反应装置。
为了解决上述问题，本发明采用如下方案：
一种晶圆化学气相淀积反应装置，包括腔体，所述腔体中内置有导气管及用于支撑晶圆的支撑架，所述腔体的内腔包括上部的反应腔及下部的增压腔，所述导气管及支撑架位于所述反应腔中，支撑架包括一固定杆及安装于固定杆上端的夹头，晶圆安装于夹头中；所述导气管位于所述晶圆的下方并与所述增压腔连通，所述增压腔与腔体外的增压泵连接。
本发明的技术效果在于：
本发明的结构简单，紧凑；采用增压方式，提高反应速度，即提高薄膜的成型速度。
附图说明
图1为本发明的结构示意图。
图中：1、腔体；10、反应腔；11、增压腔；2、支撑架；21、固定杆；22、夹头；3、导气管；4、晶圆；5、增压泵。
具体实施方式
下面结合附图对本发明的具体实施方式作进一步说明。
如图1所示，本实施例的晶圆化学气相淀积反应装置，包括腔体1，腔体1中内置有导气管3及用于支撑晶圆4的支撑架2，腔体1的内腔包括上部的反应腔10及下部的增压腔11，导气管3及支撑架2位于反应腔10中，支撑架2包括一固定杆21及安装于固定杆21上端的夹头22，晶圆4安装于夹头22中；导气管3位于晶圆4的下方并与增压腔11连通，增压腔11与腔体1外的增压泵5连接。
使用时，将反应气体通过导气管3导入至反应腔10中，启动增压泵5，向导气管3中增压，提高导气管3中的气压，从而提高接触反应速度。
以上所举实施例为本发明的较佳实施方式，仅用来方便说明本发明，并非对本发明作任何形式上的限制，任何所属技术领域中具有通常知识者，若在不脱离本发明所提技术特征的范围内，利用本发明所揭示技术内容所作出局部改动或修饰的等效实施例，并且未脱离本发明的技术特征内容，均仍属于本发明技术特征的范围内。

Claims (1)

1.一种晶圆化学气相淀积反应装置，包括腔体(1)，所述腔体(1)中内置有导气管(3)及用于支撑晶圆(4)的支撑架(2)，其特征在于：所述腔体(1)的内腔包括上部的反应腔(10)及下部的增压腔(11)，所述导气管(3)及支撑架(2)位于所述反应腔(10)中，支撑架(2)包括一固定杆(21)及安装于固定杆(21)上端的夹头(22)，晶圆(4)安装于夹头(22)中；所述导气管(3)位于所述晶圆(4)的下方并与所述增压腔(11)连通，所述增压腔(11)与腔体(1)外的增压泵(5)连接。
CN201610885352.9A 2016-10-10 2016-10-10 晶圆化学气相淀积反应装置 Pending CN106381479A (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05132780A (ja) * 1991-11-11 1993-05-28 Matsushita Electric Ind Co Ltd 薄膜形成装置および形成方法
JP2002246374A (ja) * 2001-02-20 2002-08-30 Matsushita Electric Ind Co Ltd プラズマ処理装置とそのメンテナンス方法
CN101709457A (zh) * 2009-11-05 2010-05-19 河北普莱斯曼金刚石科技有限公司 一种化学气相沉积金刚石或其它物质的装置
CN103194737A (zh) * 2012-01-05 2013-07-10 中国科学院微电子研究所 一种用于原子层沉积设备的气体分配器
CN203700517U (zh) * 2014-02-26 2014-07-09 湖南中航超强金刚石膜高科技有限公司 多层喷气式金刚石膜涂层设备

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05132780A (ja) * 1991-11-11 1993-05-28 Matsushita Electric Ind Co Ltd 薄膜形成装置および形成方法
JP2002246374A (ja) * 2001-02-20 2002-08-30 Matsushita Electric Ind Co Ltd プラズマ処理装置とそのメンテナンス方法
CN101709457A (zh) * 2009-11-05 2010-05-19 河北普莱斯曼金刚石科技有限公司 一种化学气相沉积金刚石或其它物质的装置
CN103194737A (zh) * 2012-01-05 2013-07-10 中国科学院微电子研究所 一种用于原子层沉积设备的气体分配器
CN203700517U (zh) * 2014-02-26 2014-07-09 湖南中航超强金刚石膜高科技有限公司 多层喷气式金刚石膜涂层设备

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Application publication date: 20170208