CN106399974A - 常压化学气相淀积反应腔 - Google Patents

常压化学气相淀积反应腔 Download PDF

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Publication number
CN106399974A
CN106399974A CN201610885355.2A CN201610885355A CN106399974A CN 106399974 A CN106399974 A CN 106399974A CN 201610885355 A CN201610885355 A CN 201610885355A CN 106399974 A CN106399974 A CN 106399974A
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cavity
reaction chamber
reaction cavity
reaction
normal pressure
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吕耀安
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WUXI HI-NANO TECHNOLOGY Co Ltd
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WUXI HI-NANO TECHNOLOGY Co Ltd
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Priority to CN201610885355.2A priority Critical patent/CN106399974A/zh
Publication of CN106399974A publication Critical patent/CN106399974A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明涉及一种常压化学气相淀积反应腔，包括腔体，所述腔体中内置有导气管及用于支撑晶圆的支撑座，所述腔体的内腔包括上部的反应腔及下部的安装腔，所述导气管及支撑座位于所述反应腔中，支撑座通过支撑杆活动安装于反应腔中，所述支撑杆活动贯穿安装于反应腔与安装腔之间，所述安装腔中安装有与所述支撑杆下端顶靠的凸轮，所述凸轮由安装腔中的电机驱动。本发明实现晶圆的移动式接触反应气体，提高与反应气体的反应均匀性，提高成型薄膜的均匀度。

Description

常压化学气相淀积反应腔
技术领域
本发明涉及半导体技术领域，特别涉及晶圆的化学气相淀积反应腔。
背景技术
常压化学气相淀积是指将反应气体置入反应腔中，反应气体扩散至反应腔中的晶圆表面，在晶圆表面附近的反应区发生反应形成薄膜。现有的常压化学反应腔的结构设计不合理，反应气体不能均匀的扩散至晶圆表面，导致形成的薄膜厚度不均匀。
发明内容
针对现有技术存在的上述问题，申请人进行研究及改进，提供一种常压化学气相淀积反应腔。
为了解决上述问题，本发明采用如下方案：
一种常压化学气相淀积反应腔，包括腔体，所述腔体中内置有导气管及用于支撑晶圆的支撑座，所述腔体的内腔包括上部的反应腔及下部的安装腔，所述导气管及支撑座位于所述反应腔中，支撑座通过支撑杆活动安装于反应腔中，所述支撑杆活动贯穿安装于反应腔与安装腔之间，所述安装腔中安装有与所述支撑杆下端顶靠的凸轮，所述凸轮由安装腔中的电机驱动。
本发明的技术效果在于：
本发明实现晶圆的移动式接触反应气体，提高与反应气体的反应均匀性，提高成型薄膜的均匀度。
附图说明
图1为本发明的结构示意图。
图中：1、腔体；10、反应腔；11、安装腔；2、支撑座；3、导气管；4、晶圆；5、支撑杆；6、凸轮；7、电机。
具体实施方式
下面结合附图对本发明的具体实施方式作进一步说明。
如图1所示，本实施例的常压化学气相淀积反应腔，包括腔体1，腔体1中内置有导气管3及用于支撑晶圆4的支撑座2，腔体1的内腔包括上部的反应腔10及下部的安装腔11，导气管3及支撑座2位于反应腔10中，支撑座2通过支撑杆5活动安装于反应腔10中，支撑杆5活动贯穿安装于反应腔10与安装腔11之间，安装腔11中安装有与支撑杆5下端顶靠的凸轮6，凸轮6由安装腔11中的电机7驱动。
使用时，将反应气体通过导气管3导入至反应腔10中，启动电机7，电机7带动凸轮6转动，从而带动支撑杆5上下往复升降运动，进而带动支撑座2及晶圆4上下移动，实现晶圆4与反应气体的移动接触，提高接触的均匀度。
以上所举实施例为本发明的较佳实施方式，仅用来方便说明本发明，并非对本发明作任何形式上的限制，任何所属技术领域中具有通常知识者，若在不脱离本发明所提技术特征的范围内，利用本发明所揭示技术内容所作出局部改动或修饰的等效实施例，并且未脱离本发明的技术特征内容，均仍属于本发明技术特征的范围内。

Claims (1)

1.一种常压化学气相淀积反应腔，包括腔体(1)，所述腔体(1)中内置有导气管(3)及用于支撑晶圆(4)的支撑座(2)，其特征在于：所述腔体(1)的内腔包括上部的反应腔(10)及下部的安装腔(11)，所述导气管(3)及支撑座(2)位于所述反应腔(10)中，支撑座(2)通过支撑杆(5)活动安装于反应腔(10)中，所述支撑杆(5)活动贯穿安装于反应腔(10)与安装腔(11)之间，所述安装腔(11)中安装有与所述支撑杆(5)下端顶靠的凸轮(6)，所述凸轮(6)由安装腔(11)中的电机(7)驱动。
CN201610885355.2A 2016-10-10 2016-10-10 常压化学气相淀积反应腔 Pending CN106399974A (zh)

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CN201610885355.2A CN106399974A (zh) 2016-10-10 2016-10-10 常压化学气相淀积反应腔

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CN201610885355.2A CN106399974A (zh) 2016-10-10 2016-10-10 常压化学气相淀积反应腔

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CN106399974A true CN106399974A (zh) 2017-02-15

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246374A (ja) * 2001-02-20 2002-08-30 Matsushita Electric Ind Co Ltd プラズマ処理装置とそのメンテナンス方法
CN101363984A (zh) * 2007-08-10 2009-02-11 庄添财 一种载物台升降机构
TW201021095A (en) * 2008-11-26 2010-06-01 Ind Tech Res Inst Gas shower module
CN201962357U (zh) * 2010-12-27 2011-09-07 中芯国际集成电路制造(上海)有限公司 化学气相沉积设备
CN102465281A (zh) * 2010-11-16 2012-05-23 财团法人工业技术研究院 镀膜系统与方法及其所使用的供气装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246374A (ja) * 2001-02-20 2002-08-30 Matsushita Electric Ind Co Ltd プラズマ処理装置とそのメンテナンス方法
CN101363984A (zh) * 2007-08-10 2009-02-11 庄添财 一种载物台升降机构
TW201021095A (en) * 2008-11-26 2010-06-01 Ind Tech Res Inst Gas shower module
CN102465281A (zh) * 2010-11-16 2012-05-23 财团法人工业技术研究院 镀膜系统与方法及其所使用的供气装置
CN201962357U (zh) * 2010-12-27 2011-09-07 中芯国际集成电路制造(上海)有限公司 化学气相沉积设备

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Application publication date: 20170215