JP2002231952A5 - - Google Patents

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Publication number
JP2002231952A5
JP2002231952A5 JP2001022386A JP2001022386A JP2002231952A5 JP 2002231952 A5 JP2002231952 A5 JP 2002231952A5 JP 2001022386 A JP2001022386 A JP 2001022386A JP 2001022386 A JP2001022386 A JP 2001022386A JP 2002231952 A5 JP2002231952 A5 JP 2002231952A5
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JP
Japan
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JP2001022386A
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JP2002231952A (ja
JP4939690B2 (ja
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Priority to JP2001022386A priority Critical patent/JP4939690B2/ja
Priority claimed from JP2001022386A external-priority patent/JP4939690B2/ja
Priority to US10/058,158 priority patent/US6713323B2/en
Publication of JP2002231952A publication Critical patent/JP2002231952A/ja
Publication of JP2002231952A5 publication Critical patent/JP2002231952A5/ja
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Publication of JP4939690B2 publication Critical patent/JP4939690B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2001022386A 2001-01-30 2001-01-30 半導体装置の作製方法 Expired - Fee Related JP4939690B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001022386A JP4939690B2 (ja) 2001-01-30 2001-01-30 半導体装置の作製方法
US10/058,158 US6713323B2 (en) 2001-01-30 2002-01-29 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001022386A JP4939690B2 (ja) 2001-01-30 2001-01-30 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002231952A JP2002231952A (ja) 2002-08-16
JP2002231952A5 true JP2002231952A5 (ja) 2008-03-21
JP4939690B2 JP4939690B2 (ja) 2012-05-30

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Family Applications (1)

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JP2001022386A Expired - Fee Related JP4939690B2 (ja) 2001-01-30 2001-01-30 半導体装置の作製方法

Country Status (2)

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US (1) US6713323B2 (ja)
JP (1) JP4939690B2 (ja)

Families Citing this family (34)

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JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7045444B2 (en) * 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US6858480B2 (en) * 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US6812081B2 (en) * 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
US6756608B2 (en) * 2001-08-27 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2003297750A (ja) * 2002-04-05 2003-10-17 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI306311B (en) * 2002-06-21 2009-02-11 Sanyo Electric Co Thin film transistor and method for producing thin film transistor
JP4689155B2 (ja) * 2002-08-29 2011-05-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7161291B2 (en) * 2002-09-24 2007-01-09 Dai Nippon Printing Co., Ltd Display element and method for producing the same
US7335255B2 (en) * 2002-11-26 2008-02-26 Semiconductor Energy Laboratory, Co., Ltd. Manufacturing method of semiconductor device
US7485579B2 (en) * 2002-12-13 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4666907B2 (ja) * 2002-12-13 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004200378A (ja) * 2002-12-18 2004-07-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4663963B2 (ja) * 2003-02-17 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4116465B2 (ja) * 2003-02-20 2008-07-09 株式会社日立製作所 パネル型表示装置とその製造方法および製造装置
AT500259B1 (de) * 2003-09-09 2007-08-15 Austria Tech & System Tech Dünnschichtanordnung und verfahren zum herstellen einer solchen dünnschichtanordnung
US6886330B1 (en) * 2003-11-19 2005-05-03 General Motors Corporation Hydroformed torque converter fluid coupling member
KR100611152B1 (ko) * 2003-11-27 2006-08-09 삼성에스디아이 주식회사 평판표시장치
US7507617B2 (en) * 2003-12-25 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7276402B2 (en) * 2003-12-25 2007-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8815060B2 (en) * 2004-08-30 2014-08-26 HGST Netherlands B.V. Method for minimizing magnetically dead interfacial layer during COC process
US7485511B2 (en) * 2005-06-01 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit device and method for manufacturing integrated circuit device
WO2007011061A1 (en) * 2005-07-22 2007-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100683791B1 (ko) * 2005-07-30 2007-02-20 삼성에스디아이 주식회사 박막 트랜지스터 기판 및 이를 구비한 평판 디스플레이장치
US7601566B2 (en) * 2005-10-18 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100805154B1 (ko) * 2006-09-15 2008-02-21 삼성에스디아이 주식회사 유기 발광 표시 장치 및 그 제조 방법
US7923337B2 (en) 2007-06-20 2011-04-12 International Business Machines Corporation Fin field effect transistor devices with self-aligned source and drain regions
US8395156B2 (en) * 2009-11-24 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5993141B2 (ja) * 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 記憶装置
FR2978604B1 (fr) * 2011-07-28 2018-09-14 Soitec Procede de guerison de defauts dans une couche semi-conductrice
KR102236381B1 (ko) * 2014-07-18 2021-04-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
WO2016098651A1 (ja) * 2014-12-16 2016-06-23 シャープ株式会社 半導体装置、その製造方法、および半導体装置を備えた表示装置
JP6977561B2 (ja) * 2015-11-18 2021-12-08 ソニーグループ株式会社 半導体装置および投射型表示装置
US11650469B2 (en) * 2018-03-28 2023-05-16 Sharp Kabushiki Kaisha Method for producing display device

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JPH05109737A (ja) 1991-10-18 1993-04-30 Casio Comput Co Ltd 薄膜トランジスタの製造方法
TW264575B (ja) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
JP3431041B2 (ja) 1993-11-12 2003-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3539821B2 (ja) * 1995-03-27 2004-07-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5753560A (en) * 1996-10-31 1998-05-19 Motorola, Inc. Method for fabricating a semiconductor device using lateral gettering
JPH1140498A (ja) * 1997-07-22 1999-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4159713B2 (ja) * 1998-11-25 2008-10-01 株式会社半導体エネルギー研究所 半導体装置
US6306694B1 (en) * 1999-03-12 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Process of fabricating a semiconductor device
JP3425392B2 (ja) * 1999-05-27 2003-07-14 シャープ株式会社 半導体装置の製造方法
JP2001210828A (ja) 2000-01-28 2001-08-03 Seiko Epson Corp 薄膜半導体装置の製造方法
JP2001319878A (ja) * 2000-05-11 2001-11-16 Sharp Corp 半導体製造方法
SG103846A1 (en) * 2001-02-28 2004-05-26 Semiconductor Energy Lab A method of manufacturing a semiconductor device

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