JP2002217438A - 薄膜半導体素子の製造方法 - Google Patents

薄膜半導体素子の製造方法

Info

Publication number
JP2002217438A
JP2002217438A JP2001013977A JP2001013977A JP2002217438A JP 2002217438 A JP2002217438 A JP 2002217438A JP 2001013977 A JP2001013977 A JP 2001013977A JP 2001013977 A JP2001013977 A JP 2001013977A JP 2002217438 A JP2002217438 A JP 2002217438A
Authority
JP
Japan
Prior art keywords
film
porous
substrate
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001013977A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002217438A5 (enExample
Inventor
Takeshi Matsushita
孟史 松下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2001013977A priority Critical patent/JP2002217438A/ja
Publication of JP2002217438A publication Critical patent/JP2002217438A/ja
Publication of JP2002217438A5 publication Critical patent/JP2002217438A5/ja
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP2001013977A 2001-01-23 2001-01-23 薄膜半導体素子の製造方法 Pending JP2002217438A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001013977A JP2002217438A (ja) 2001-01-23 2001-01-23 薄膜半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001013977A JP2002217438A (ja) 2001-01-23 2001-01-23 薄膜半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JP2002217438A true JP2002217438A (ja) 2002-08-02
JP2002217438A5 JP2002217438A5 (enExample) 2008-03-06

Family

ID=18880728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001013977A Pending JP2002217438A (ja) 2001-01-23 2001-01-23 薄膜半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JP2002217438A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012029333A1 (ja) 2010-08-31 2012-03-08 Akiyama Nobuyuki シリコン薄膜の製造方法、シリコン薄膜太陽電池の製造方法、シリコン薄膜、シリコン薄膜太陽電池
KR101317499B1 (ko) 2011-11-16 2013-10-15 세종대학교산학협력단 듀얼 스트레스를 가지는 태양전지 및 그 제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09255487A (ja) * 1996-03-18 1997-09-30 Sony Corp 薄膜半導体の製造方法
JP2001015721A (ja) * 1999-04-30 2001-01-19 Canon Inc 複合部材の分離方法及び薄膜の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09255487A (ja) * 1996-03-18 1997-09-30 Sony Corp 薄膜半導体の製造方法
JP2001015721A (ja) * 1999-04-30 2001-01-19 Canon Inc 複合部材の分離方法及び薄膜の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012029333A1 (ja) 2010-08-31 2012-03-08 Akiyama Nobuyuki シリコン薄膜の製造方法、シリコン薄膜太陽電池の製造方法、シリコン薄膜、シリコン薄膜太陽電池
KR101317499B1 (ko) 2011-11-16 2013-10-15 세종대학교산학협력단 듀얼 스트레스를 가지는 태양전지 및 그 제조방법

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