JP2002118074A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

Info

Publication number
JP2002118074A
JP2002118074A JP2000308506A JP2000308506A JP2002118074A JP 2002118074 A JP2002118074 A JP 2002118074A JP 2000308506 A JP2000308506 A JP 2000308506A JP 2000308506 A JP2000308506 A JP 2000308506A JP 2002118074 A JP2002118074 A JP 2002118074A
Authority
JP
Japan
Prior art keywords
film
impurity element
substrate
semiconductor
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000308506A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002118074A5 (enrdf_load_stackoverflow
Inventor
Osamu Nakamura
理 中村
Masayuki Kajiwara
誠之 梶原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000308506A priority Critical patent/JP2002118074A/ja
Publication of JP2002118074A publication Critical patent/JP2002118074A/ja
Publication of JP2002118074A5 publication Critical patent/JP2002118074A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Transforming Electric Information Into Light Information (AREA)
  • Thin Film Transistor (AREA)
JP2000308506A 2000-10-06 2000-10-06 半導体装置の作製方法 Withdrawn JP2002118074A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000308506A JP2002118074A (ja) 2000-10-06 2000-10-06 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000308506A JP2002118074A (ja) 2000-10-06 2000-10-06 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2002118074A true JP2002118074A (ja) 2002-04-19
JP2002118074A5 JP2002118074A5 (enrdf_load_stackoverflow) 2007-11-22

Family

ID=18788804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000308506A Withdrawn JP2002118074A (ja) 2000-10-06 2000-10-06 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2002118074A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013258421A (ja) * 2003-02-24 2013-12-26 Semiconductor Energy Lab Co Ltd 半導体装置、ｉｃラベルおよび商品容器

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0349217A (ja) * 1989-07-18 1991-03-04 Fuji Electric Co Ltd 半導体基体用プラズマドーピング装置
JPH04147617A (ja) * 1990-10-09 1992-05-21 Hitachi Ltd 半導体集積回路装置とその製造方法
JPH07221043A (ja) * 1994-02-08 1995-08-18 G T C:Kk イオン注入法
JPH08204208A (ja) * 1995-01-30 1996-08-09 Semiconductor Energy Lab Co Ltd 結晶性シリコン半導体装置の製造方法
JPH08274344A (ja) * 1995-01-30 1996-10-18 Semiconductor Energy Lab Co Ltd ドーピング方法および半導体装置の作製方法
JPH09129895A (ja) * 1995-08-31 1997-05-16 Toshiba Electron Eng Corp 薄膜トランジスタの製造方法
JPH1012890A (ja) * 1996-06-20 1998-01-16 Sony Corp 薄膜半導体装置の製造方法
JPH10261593A (ja) * 1997-01-20 1998-09-29 Toshiba Corp 半導体装置の製造方法、半導体製造装置、および半導体装置
JP2000058472A (ja) * 1998-06-03 2000-02-25 Toshiba Corp 半導体装置の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0349217A (ja) * 1989-07-18 1991-03-04 Fuji Electric Co Ltd 半導体基体用プラズマドーピング装置
JPH04147617A (ja) * 1990-10-09 1992-05-21 Hitachi Ltd 半導体集積回路装置とその製造方法
JPH07221043A (ja) * 1994-02-08 1995-08-18 G T C:Kk イオン注入法
JPH08204208A (ja) * 1995-01-30 1996-08-09 Semiconductor Energy Lab Co Ltd 結晶性シリコン半導体装置の製造方法
JPH08274344A (ja) * 1995-01-30 1996-10-18 Semiconductor Energy Lab Co Ltd ドーピング方法および半導体装置の作製方法
JPH09129895A (ja) * 1995-08-31 1997-05-16 Toshiba Electron Eng Corp 薄膜トランジスタの製造方法
JPH1012890A (ja) * 1996-06-20 1998-01-16 Sony Corp 薄膜半導体装置の製造方法
JPH10261593A (ja) * 1997-01-20 1998-09-29 Toshiba Corp 半導体装置の製造方法、半導体製造装置、および半導体装置
JP2000058472A (ja) * 1998-06-03 2000-02-25 Toshiba Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013258421A (ja) * 2003-02-24 2013-12-26 Semiconductor Energy Lab Co Ltd 半導体装置、ｉｃラベルおよび商品容器

Similar Documents

Publication Publication Date Title
US7459354B2 (en) Method for manufacturing a semiconductor device including top gate thin film transistor and method for manufacturing an active matrix device including top gate thin film transistor
JP5078205B2 (ja) レーザ照射装置
JP4869509B2 (ja) 半導体装置の作製方法
JP2003045874A (ja) 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
JP2003152086A (ja) 半導体装置
JP2003045820A (ja) レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
JP5046439B2 (ja) 半導体装置の作製方法
JP4845309B2 (ja) レーザアニール方法及び半導体装置の作製方法
JP5292453B2 (ja) 半導体装置の作製方法
JP2002064107A (ja) 半導体装置の作製方法
JP2002261007A (ja) 半導体装置の作製方法
JP2002305208A (ja) 半導体装置の作製方法
JP2002270510A (ja) 半導体装置の作製方法
JP5520911B2 (ja) 半導体装置の作製方法
JP2002057344A (ja) 半導体装置の作製方法
JP2002329668A (ja) 半導体装置の作製方法
JP2002305148A (ja) 半導体装置の作製方法
JP4968996B2 (ja) 半導体装置の作製方法
JP4641598B2 (ja) 半導体装置の作製方法
JP2002190454A (ja) レーザビームの加工方法、レーザ照射装置、並びに半導体装置の作製方法
JP2002118074A (ja) 半導体装置の作製方法
JP4255639B2 (ja) 半導体装置の作製方法
JP6087970B2 (ja) 表示装置、表示モジュール及び電子機器
JP2003007722A (ja) 半導体装置およびその作製方法
JP2012142571A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071004

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071004

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101102

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101111

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101215

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110510

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110704

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120207

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20120424