JP2002076135A - Ｍｏｓトランジスタ、インバータ、レシオ回路及びラッチ回路 - Google Patents

Ｍｏｓトランジスタ、インバータ、レシオ回路及びラッチ回路

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Publication number
JP2002076135A
JP2002076135A JP2000265797A JP2000265797A JP2002076135A JP 2002076135 A JP2002076135 A JP 2002076135A JP 2000265797 A JP2000265797 A JP 2000265797A JP 2000265797 A JP2000265797 A JP 2000265797A JP 2002076135 A JP2002076135 A JP 2002076135A
Authority
JP
Japan
Prior art keywords
inverter
region
transistor
mos transistor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000265797A
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English (en)
Japanese (ja)
Other versions
JP2002076135A5 (enExample
Inventor
Hiroshi Takahashi
博 高橋
Michikado Ikeno
理門 池野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Japan Ltd
Original Assignee
Texas Instruments Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Japan Ltd filed Critical Texas Instruments Japan Ltd
Priority to JP2000265797A priority Critical patent/JP2002076135A/ja
Publication of JP2002076135A publication Critical patent/JP2002076135A/ja
Publication of JP2002076135A5 publication Critical patent/JP2002076135A5/ja
Withdrawn legal-status Critical Current

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Landscapes

  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2000265797A 2000-09-01 2000-09-01 Ｍｏｓトランジスタ、インバータ、レシオ回路及びラッチ回路 Withdrawn JP2002076135A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000265797A JP2002076135A (ja) 2000-09-01 2000-09-01 Ｍｏｓトランジスタ、インバータ、レシオ回路及びラッチ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000265797A JP2002076135A (ja) 2000-09-01 2000-09-01 Ｍｏｓトランジスタ、インバータ、レシオ回路及びラッチ回路

Publications (2)

Publication Number Publication Date
JP2002076135A true JP2002076135A (ja) 2002-03-15
JP2002076135A5 JP2002076135A5 (enExample) 2007-10-04

Family

ID=18753010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000265797A Withdrawn JP2002076135A (ja) 2000-09-01 2000-09-01 Ｍｏｓトランジスタ、インバータ、レシオ回路及びラッチ回路

Country Status (1)

Country Link
JP (1) JP2002076135A (enExample)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213477A (ja) * 1995-02-07 1996-08-20 Semiconductor Energy Lab Co Ltd 薄膜半導体集積回路
JPH098612A (ja) * 1995-06-16 1997-01-10 Nec Corp ラッチ回路
JPH09326685A (ja) * 1996-06-05 1997-12-16 Fujitsu Ltd 半導体装置
JPH11220124A (ja) * 1998-01-30 1999-08-10 Sanyo Electric Co Ltd 半導体装置
JP2000150883A (ja) * 1998-09-07 2000-05-30 Seiko Epson Corp Ｍｏｓ型トランジスタおよび半導体装置
JP2000278098A (ja) * 1999-03-24 2000-10-06 Texas Instr Japan Ltd レシオ回路、ラッチ回路及びｍｏｓトランジスタ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213477A (ja) * 1995-02-07 1996-08-20 Semiconductor Energy Lab Co Ltd 薄膜半導体集積回路
JPH098612A (ja) * 1995-06-16 1997-01-10 Nec Corp ラッチ回路
JPH09326685A (ja) * 1996-06-05 1997-12-16 Fujitsu Ltd 半導体装置
JPH11220124A (ja) * 1998-01-30 1999-08-10 Sanyo Electric Co Ltd 半導体装置
JP2000150883A (ja) * 1998-09-07 2000-05-30 Seiko Epson Corp Ｍｏｓ型トランジスタおよび半導体装置
JP2000278098A (ja) * 1999-03-24 2000-10-06 Texas Instr Japan Ltd レシオ回路、ラッチ回路及びｍｏｓトランジスタ

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