JP2002033331A - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法

Info

Publication number
JP2002033331A
JP2002033331A JP2001142322A JP2001142322A JP2002033331A JP 2002033331 A JP2002033331 A JP 2002033331A JP 2001142322 A JP2001142322 A JP 2001142322A JP 2001142322 A JP2001142322 A JP 2001142322A JP 2002033331 A JP2002033331 A JP 2002033331A
Authority
JP
Japan
Prior art keywords
film
semiconductor
conductive film
semiconductor film
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001142322A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002033331A5 (enExample
Inventor
Tatsuya Arao
達也 荒尾
Hideomi Suzawa
英臣 須沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001142322A priority Critical patent/JP2002033331A/ja
Publication of JP2002033331A publication Critical patent/JP2002033331A/ja
Publication of JP2002033331A5 publication Critical patent/JP2002033331A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP2001142322A 2000-05-12 2001-05-11 半導体装置及びその作製方法 Withdrawn JP2002033331A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001142322A JP2002033331A (ja) 2000-05-12 2001-05-11 半導体装置及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-140592 2000-05-12
JP2000140592 2000-05-12
JP2001142322A JP2002033331A (ja) 2000-05-12 2001-05-11 半導体装置及びその作製方法

Publications (2)

Publication Number Publication Date
JP2002033331A true JP2002033331A (ja) 2002-01-31
JP2002033331A5 JP2002033331A5 (enExample) 2008-05-22

Family

ID=26591806

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JP2001142322A Withdrawn JP2002033331A (ja) 2000-05-12 2001-05-11 半導体装置及びその作製方法

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JP (1) JP2002033331A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006781A (ja) * 2002-04-03 2004-01-08 General Electric Co <Ge> 撮影アレイ及びその製造方法
JP2005116924A (ja) * 2003-10-10 2005-04-28 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ、発光装置並びに液晶表示装置、及びそれらの作製方法
JP2006093652A (ja) * 2004-09-20 2006-04-06 Samsung Sdi Co Ltd 有機薄膜トランジスタ及びこれを備えた平板表示装置
US7751008B2 (en) 2004-12-17 2010-07-06 Mitsubishi Denki Kabushiki Kaisha Liquid crystal display and method of manufacturing a liquid crystal display with a barrier formed of TFT materials
JP2016066100A (ja) * 2009-09-04 2016-04-28 株式会社半導体エネルギー研究所 半導体装置
JP2023001235A (ja) * 2010-12-28 2023-01-04 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2023093433A (ja) * 2018-09-26 2023-07-04 三国電子有限会社 多階調フォトマスク、フォトマスク群、パターン転写方法、および表示デバイス
JP2024050886A (ja) * 2012-01-20 2024-04-10 株式会社半導体エネルギー研究所 半導体装置
WO2024165961A1 (ja) * 2023-02-10 2024-08-15 株式会社半導体エネルギー研究所 半導体装置、及びその作製方法
US12066731B2 (en) 2020-02-05 2024-08-20 Mikuni Electron Corporation Thin film transistor
US12433090B2 (en) 2018-08-31 2025-09-30 Mikuni Electron Corporation Organic electroluminescence element including carrier injection amount control electrode
US12696362B2 (en) 2020-06-23 2026-07-28 Mikuni Electron Corporation Electroluminescence element and method of manufacturing electroluminescence element

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6429821A (en) * 1987-07-24 1989-01-31 Nec Corp Thin film field effect type transistor element array and its production
JPH05210119A (ja) * 1991-07-11 1993-08-20 Centre Natl Etud Telecommun (Ptt) 能動マトリクス液晶スクリーン構造
JPH07235678A (ja) * 1994-02-22 1995-09-05 Hitachi Ltd 薄膜半導体装置及びその製造方法
JPH09279367A (ja) * 1996-04-17 1997-10-28 Mitsubishi Electric Corp Ａｌテーパドライエッチング方法
JPH1048669A (ja) * 1996-08-05 1998-02-20 Nec Corp 薄膜トランジスター、その製造方法および表示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6429821A (en) * 1987-07-24 1989-01-31 Nec Corp Thin film field effect type transistor element array and its production
JPH05210119A (ja) * 1991-07-11 1993-08-20 Centre Natl Etud Telecommun (Ptt) 能動マトリクス液晶スクリーン構造
JPH07235678A (ja) * 1994-02-22 1995-09-05 Hitachi Ltd 薄膜半導体装置及びその製造方法
JPH09279367A (ja) * 1996-04-17 1997-10-28 Mitsubishi Electric Corp Ａｌテーパドライエッチング方法
JPH1048669A (ja) * 1996-08-05 1998-02-20 Nec Corp 薄膜トランジスター、その製造方法および表示装置

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006781A (ja) * 2002-04-03 2004-01-08 General Electric Co <Ge> 撮影アレイ及びその製造方法
JP2005116924A (ja) * 2003-10-10 2005-04-28 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ、発光装置並びに液晶表示装置、及びそれらの作製方法
JP2006093652A (ja) * 2004-09-20 2006-04-06 Samsung Sdi Co Ltd 有機薄膜トランジスタ及びこれを備えた平板表示装置
US7751008B2 (en) 2004-12-17 2010-07-06 Mitsubishi Denki Kabushiki Kaisha Liquid crystal display and method of manufacturing a liquid crystal display with a barrier formed of TFT materials
US12408435B2 (en) 2009-09-04 2025-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10629627B2 (en) 2009-09-04 2020-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10854640B2 (en) 2009-09-04 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11695019B2 (en) 2009-09-04 2023-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016066100A (ja) * 2009-09-04 2016-04-28 株式会社半導体エネルギー研究所 半導体装置
US12002818B2 (en) 2009-09-04 2024-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2023001235A (ja) * 2010-12-28 2023-01-04 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP7658005B2 (ja) 2010-12-28 2025-04-07 株式会社半導体エネルギー研究所 半導体装置
JP7463476B2 (ja) 2010-12-28 2024-04-08 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2024071598A (ja) * 2010-12-28 2024-05-24 株式会社半導体エネルギー研究所 半導体装置
JP2024050886A (ja) * 2012-01-20 2024-04-10 株式会社半導体エネルギー研究所 半導体装置
US12426366B2 (en) 2012-01-20 2025-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP7788478B2 (ja) 2012-01-20 2025-12-18 株式会社半導体エネルギー研究所 半導体装置
US12433090B2 (en) 2018-08-31 2025-09-30 Mikuni Electron Corporation Organic electroluminescence element including carrier injection amount control electrode
US12432981B2 (en) 2018-09-26 2025-09-30 Mikuni Electron Corporation Transistor, method of manufacturing transistor, and display device using the same
US12113134B2 (en) 2018-09-26 2024-10-08 Mikuni Electron Corporation Transistor, method of manufacturing transistor, and display device using the same
JP2023093433A (ja) * 2018-09-26 2023-07-04 三国電子有限会社 多階調フォトマスク、フォトマスク群、パターン転写方法、および表示デバイス
US12066731B2 (en) 2020-02-05 2024-08-20 Mikuni Electron Corporation Thin film transistor
US12572046B2 (en) 2020-02-05 2026-03-10 Mikuni Electron Corporation Display device
US12696362B2 (en) 2020-06-23 2026-07-28 Mikuni Electron Corporation Electroluminescence element and method of manufacturing electroluminescence element
WO2024165961A1 (ja) * 2023-02-10 2024-08-15 株式会社半導体エネルギー研究所 半導体装置、及びその作製方法

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