JP2002026121A - 半導体装置およびその製造方法、絶縁膜の形成方法 - Google Patents
半導体装置およびその製造方法、絶縁膜の形成方法Info
- Publication number
- JP2002026121A JP2002026121A JP2000199737A JP2000199737A JP2002026121A JP 2002026121 A JP2002026121 A JP 2002026121A JP 2000199737 A JP2000199737 A JP 2000199737A JP 2000199737 A JP2000199737 A JP 2000199737A JP 2002026121 A JP2002026121 A JP 2002026121A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- semiconductor device
- less
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 43
- 238000009413 insulation Methods 0.000 title 1
- 239000011229 interlayer Substances 0.000 claims description 70
- 239000010410 layer Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 22
- 238000012545 processing Methods 0.000 claims description 19
- 238000009832 plasma treatment Methods 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 238000012986 modification Methods 0.000 claims description 7
- 230000004048 modification Effects 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 125000004429 atom Chemical group 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims description 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 4
- 238000005530 etching Methods 0.000 description 28
- 238000004140 cleaning Methods 0.000 description 15
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000009977 dual effect Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000011148 porous material Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000004381 surface treatment Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910018557 Si O Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 125000005375 organosiloxane group Chemical group 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 235000001630 Pyrus pyrifolia var culta Nutrition 0.000 description 1
- 240000002609 Pyrus pyrifolia var. culta Species 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 108010025899 gelatin film Proteins 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000199737A JP2002026121A (ja) | 2000-06-30 | 2000-06-30 | 半導体装置およびその製造方法、絶縁膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000199737A JP2002026121A (ja) | 2000-06-30 | 2000-06-30 | 半導体装置およびその製造方法、絶縁膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002026121A true JP2002026121A (ja) | 2002-01-25 |
| JP2002026121A5 JP2002026121A5 (enrdf_load_stackoverflow) | 2007-08-09 |
Family
ID=18697708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000199737A Pending JP2002026121A (ja) | 2000-06-30 | 2000-06-30 | 半導体装置およびその製造方法、絶縁膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002026121A (enrdf_load_stackoverflow) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002370059A (ja) * | 2001-03-13 | 2002-12-24 | Tokyo Electron Ltd | 膜形成方法及び膜形成装置 |
| US6815341B2 (en) | 2000-02-23 | 2004-11-09 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating metal interconnect in a carbon-containing silicon oxide film |
| JP2005516391A (ja) * | 2002-01-17 | 2005-06-02 | シレックス オサケユキチュア | ポリ（オルガノシロキサン）材料および集積回路用ハイブリッド有機−無機誘電体の製造方法 |
| JP2005209975A (ja) * | 2004-01-26 | 2005-08-04 | Semiconductor Leading Edge Technologies Inc | 半導体装置およびその製造方法 |
| JP2006128722A (ja) * | 2002-04-12 | 2006-05-18 | Renesas Technology Corp | 半導体装置 |
| US7056825B2 (en) | 2003-06-05 | 2006-06-06 | Renesas Technology Corp. | Method for manufacturing a semiconductor device that includes plasma treating an insulating film with a mixture of helium and argon gases |
| JP2006156602A (ja) * | 2004-11-26 | 2006-06-15 | Asahi Kasei Corp | 絶縁膜 |
| JP2006261514A (ja) * | 2005-03-18 | 2006-09-28 | Nec Electronics Corp | 半導体チップおよびその製造方法 |
| US7132732B2 (en) | 2003-01-29 | 2006-11-07 | Nec Electronics Corporation | Semiconductor device having two distinct sioch layers |
| US7189643B2 (en) | 2003-07-25 | 2007-03-13 | Fujitsu Limited | Semiconductor device and method of fabricating the same |
| US7199044B2 (en) | 2003-06-18 | 2007-04-03 | Fujitsu Limited | Method for manufacturing semiconductor device |
| WO2007080944A1 (ja) * | 2006-01-13 | 2007-07-19 | Tokyo Electron Limited | 多孔質膜の成膜方法およびコンピュータ可読記録媒体 |
| US7262142B2 (en) | 2004-12-09 | 2007-08-28 | Fujitsu Limited | Semiconductor device fabrication method |
| JP2010004081A (ja) * | 2003-04-23 | 2010-01-07 | Tokyo Electron Ltd | 層間絶縁膜の表面改質方法及び表面改質装置 |
| US7772700B2 (en) | 2002-04-12 | 2010-08-10 | Renesas Technology Corp. | Semiconductor device |
| WO2010147141A1 (ja) * | 2009-06-16 | 2010-12-23 | 東京エレクトロン株式会社 | 成膜方法、前処理装置及び処理システム |
| WO2011114960A1 (ja) * | 2010-03-16 | 2011-09-22 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US8278763B2 (en) | 2006-05-17 | 2012-10-02 | Nec Corporation | Semiconductor device |
| WO2022230414A1 (ja) * | 2021-04-28 | 2022-11-03 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及びエッチング方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1070121A (ja) * | 1995-11-16 | 1998-03-10 | Texas Instr Inc <Ti> | 半導体基板上に薄膜ナノ多孔質アエロゲルを形成するための低揮発性溶剤基の方法 |
| JPH10189715A (ja) * | 1996-12-25 | 1998-07-21 | Nec Corp | 半導体装置およびその製造方法 |
| JPH1187503A (ja) * | 1997-09-10 | 1999-03-30 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| JPH11297829A (ja) * | 1998-04-15 | 1999-10-29 | Nec Corp | 半導体装置及びその製造方法 |
| JP2000058642A (ja) * | 1998-08-07 | 2000-02-25 | Toshiba Corp | 半導体装置の製造方法 |
| JP2000091422A (ja) * | 1998-09-16 | 2000-03-31 | Sony Corp | 多層配線構造の製造方法 |
-
2000
- 2000-06-30 JP JP2000199737A patent/JP2002026121A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1070121A (ja) * | 1995-11-16 | 1998-03-10 | Texas Instr Inc <Ti> | 半導体基板上に薄膜ナノ多孔質アエロゲルを形成するための低揮発性溶剤基の方法 |
| JPH10189715A (ja) * | 1996-12-25 | 1998-07-21 | Nec Corp | 半導体装置およびその製造方法 |
| JPH1187503A (ja) * | 1997-09-10 | 1999-03-30 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| JPH11297829A (ja) * | 1998-04-15 | 1999-10-29 | Nec Corp | 半導体装置及びその製造方法 |
| JP2000058642A (ja) * | 1998-08-07 | 2000-02-25 | Toshiba Corp | 半導体装置の製造方法 |
| JP2000091422A (ja) * | 1998-09-16 | 2000-03-31 | Sony Corp | 多層配線構造の製造方法 |
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7030009B2 (en) | 2000-02-23 | 2006-04-18 | Matsushita Electric Industrial Co., Ltd. | Method for forming metal interconnect in a carbon containing silicon oxide film |
| US6815341B2 (en) | 2000-02-23 | 2004-11-09 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating metal interconnect in a carbon-containing silicon oxide film |
| JP2002370059A (ja) * | 2001-03-13 | 2002-12-24 | Tokyo Electron Ltd | 膜形成方法及び膜形成装置 |
| JP2005516391A (ja) * | 2002-01-17 | 2005-06-02 | シレックス オサケユキチュア | ポリ（オルガノシロキサン）材料および集積回路用ハイブリッド有機−無機誘電体の製造方法 |
| US7772700B2 (en) | 2002-04-12 | 2010-08-10 | Renesas Technology Corp. | Semiconductor device |
| JP2006128722A (ja) * | 2002-04-12 | 2006-05-18 | Renesas Technology Corp | 半導体装置 |
| US7132732B2 (en) | 2003-01-29 | 2006-11-07 | Nec Electronics Corporation | Semiconductor device having two distinct sioch layers |
| US7833901B2 (en) | 2003-01-29 | 2010-11-16 | Nec Electronics Corporation | Method for manufacturing a semiconductor device having a multi-layered insulating structure of SiOCH layers and an SiO2 layer |
| JP2010004081A (ja) * | 2003-04-23 | 2010-01-07 | Tokyo Electron Ltd | 層間絶縁膜の表面改質方法及び表面改質装置 |
| US7056825B2 (en) | 2003-06-05 | 2006-06-06 | Renesas Technology Corp. | Method for manufacturing a semiconductor device that includes plasma treating an insulating film with a mixture of helium and argon gases |
| US7199044B2 (en) | 2003-06-18 | 2007-04-03 | Fujitsu Limited | Method for manufacturing semiconductor device |
| US7189643B2 (en) | 2003-07-25 | 2007-03-13 | Fujitsu Limited | Semiconductor device and method of fabricating the same |
| JP2005209975A (ja) * | 2004-01-26 | 2005-08-04 | Semiconductor Leading Edge Technologies Inc | 半導体装置およびその製造方法 |
| JP2006156602A (ja) * | 2004-11-26 | 2006-06-15 | Asahi Kasei Corp | 絶縁膜 |
| US7262142B2 (en) | 2004-12-09 | 2007-08-28 | Fujitsu Limited | Semiconductor device fabrication method |
| JP2006261514A (ja) * | 2005-03-18 | 2006-09-28 | Nec Electronics Corp | 半導体チップおよびその製造方法 |
| WO2007080944A1 (ja) * | 2006-01-13 | 2007-07-19 | Tokyo Electron Limited | 多孔質膜の成膜方法およびコンピュータ可読記録媒体 |
| KR100933374B1 (ko) | 2006-01-13 | 2009-12-22 | 도쿄엘렉트론가부시키가이샤 | 다공질 막의 성막 방법 및 컴퓨터 판독가능한 기록 매체 |
| US8278763B2 (en) | 2006-05-17 | 2012-10-02 | Nec Corporation | Semiconductor device |
| JP5168142B2 (ja) * | 2006-05-17 | 2013-03-21 | 日本電気株式会社 | 半導体装置 |
| WO2010147141A1 (ja) * | 2009-06-16 | 2010-12-23 | 東京エレクトロン株式会社 | 成膜方法、前処理装置及び処理システム |
| JP2011003569A (ja) * | 2009-06-16 | 2011-01-06 | Tohoku Univ | 成膜方法、前処理装置及び処理システム |
| KR101399814B1 (ko) * | 2009-06-16 | 2014-05-27 | 도쿄엘렉트론가부시키가이샤 | 성막 방법, 전처리 장치 및 처리 시스템 |
| US8865590B2 (en) | 2009-06-16 | 2014-10-21 | Tokyo Electron Limited | Film forming method, pretreatment device, and processing system |
| WO2011114960A1 (ja) * | 2010-03-16 | 2011-09-22 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| WO2022230414A1 (ja) * | 2021-04-28 | 2022-11-03 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及びエッチング方法 |
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