JP2002015992A - リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法 - Google Patents

リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法

Info

Publication number
JP2002015992A
JP2002015992A JP2001126644A JP2001126644A JP2002015992A JP 2002015992 A JP2002015992 A JP 2002015992A JP 2001126644 A JP2001126644 A JP 2001126644A JP 2001126644 A JP2001126644 A JP 2001126644A JP 2002015992 A JP2002015992 A JP 2002015992A
Authority
JP
Japan
Prior art keywords
substrate
photosensitive material
pattern
evaluation
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001126644A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002015992A5 (enrdf_load_stackoverflow
Inventor
Yuji Imai
裕二 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2001126644A priority Critical patent/JP2002015992A/ja
Priority to KR1020010022329A priority patent/KR100781099B1/ko
Priority to TW090109858A priority patent/TW527638B/zh
Publication of JP2002015992A publication Critical patent/JP2002015992A/ja
Publication of JP2002015992A5 publication Critical patent/JP2002015992A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2001126644A 2000-04-25 2001-04-24 リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法 Pending JP2002015992A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001126644A JP2002015992A (ja) 2000-04-25 2001-04-24 リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法
KR1020010022329A KR100781099B1 (ko) 2000-04-25 2001-04-25 리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치
TW090109858A TW527638B (en) 2000-04-25 2001-04-25 Evaluating method of lithography system, adjusting method for substrate-processing apparatus, lithography system and exposure apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-124506 2000-04-25
JP2000124506 2000-04-25
JP2001126644A JP2002015992A (ja) 2000-04-25 2001-04-24 リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法

Publications (2)

Publication Number Publication Date
JP2002015992A true JP2002015992A (ja) 2002-01-18
JP2002015992A5 JP2002015992A5 (enrdf_load_stackoverflow) 2008-04-03

Family

ID=26590755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001126644A Pending JP2002015992A (ja) 2000-04-25 2001-04-24 リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法

Country Status (3)

Country Link
JP (1) JP2002015992A (enrdf_load_stackoverflow)
KR (1) KR100781099B1 (enrdf_load_stackoverflow)
TW (1) TW527638B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003218022A (ja) * 2002-01-28 2003-07-31 Tokyo Electron Ltd 基板処理方法及び基板処理装置
CN113504711A (zh) * 2021-06-28 2021-10-15 上海华虹宏力半导体制造有限公司 光刻显影的检测方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100528971B1 (ko) * 2003-05-02 2005-11-16 한국전자통신연구원 전자빔 리소그라피 시스템
JP2004363085A (ja) * 2003-05-09 2004-12-24 Ebara Corp 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法
JP6415186B2 (ja) * 2014-08-27 2018-10-31 キヤノン株式会社 評価用マスク、評価方法、露光装置及び物品の製造方法
CN112204707B (zh) * 2018-05-31 2024-07-23 应用材料公司 数字光刻系统的多基板处理

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179317A (ja) * 1988-01-05 1989-07-17 Nikon Corp 基板処理システム
JPH01187817A (ja) * 1988-01-21 1989-07-27 Nikon Corp 露光方法、露光条件測定方法及ぴパターン測定方法
JPH0289305A (ja) * 1988-09-27 1990-03-29 Nikon Corp リソグラフィ装置
JPH04168715A (ja) * 1990-10-31 1992-06-16 Nec Yamagata Ltd フォトレジストパターン形成装置
JPH05102031A (ja) * 1991-10-04 1993-04-23 Fujitsu Ltd 感光性被膜の感度測定法及び耐蝕性被膜の形成法
JPH06317913A (ja) * 1992-03-05 1994-11-15 Natl Semiconductor Corp <Ns> 潜像測定を用いたフォトリソグラフィ制御方法及びその装置
JPH0766112A (ja) * 1993-08-31 1995-03-10 Hoya Corp レジストパターン形成条件決定方法及びレジストパターン形成方法
JPH09218500A (ja) * 1996-02-14 1997-08-19 Dainippon Printing Co Ltd レジストパターンの作製方法
JPH09232223A (ja) * 1996-02-19 1997-09-05 Canon Inc アライメント方法
JPH09257457A (ja) * 1996-03-18 1997-10-03 Matsushita Electron Corp パターン形状計測方法およびパターン位置計測方法
JPH10260010A (ja) * 1997-03-19 1998-09-29 Nikon Corp マーク計測方法及び装置
JPH11297608A (ja) * 1998-04-15 1999-10-29 Sony Corp 露光方法及び露光装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JPH0828321B2 (ja) * 1990-08-20 1996-03-21 松下電器産業株式会社 レジスト塗布評価方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179317A (ja) * 1988-01-05 1989-07-17 Nikon Corp 基板処理システム
JPH01187817A (ja) * 1988-01-21 1989-07-27 Nikon Corp 露光方法、露光条件測定方法及ぴパターン測定方法
JPH0289305A (ja) * 1988-09-27 1990-03-29 Nikon Corp リソグラフィ装置
JPH04168715A (ja) * 1990-10-31 1992-06-16 Nec Yamagata Ltd フォトレジストパターン形成装置
JPH05102031A (ja) * 1991-10-04 1993-04-23 Fujitsu Ltd 感光性被膜の感度測定法及び耐蝕性被膜の形成法
JPH06317913A (ja) * 1992-03-05 1994-11-15 Natl Semiconductor Corp <Ns> 潜像測定を用いたフォトリソグラフィ制御方法及びその装置
JPH0766112A (ja) * 1993-08-31 1995-03-10 Hoya Corp レジストパターン形成条件決定方法及びレジストパターン形成方法
JPH09218500A (ja) * 1996-02-14 1997-08-19 Dainippon Printing Co Ltd レジストパターンの作製方法
JPH09232223A (ja) * 1996-02-19 1997-09-05 Canon Inc アライメント方法
JPH09257457A (ja) * 1996-03-18 1997-10-03 Matsushita Electron Corp パターン形状計測方法およびパターン位置計測方法
JPH10260010A (ja) * 1997-03-19 1998-09-29 Nikon Corp マーク計測方法及び装置
JPH11297608A (ja) * 1998-04-15 1999-10-29 Sony Corp 露光方法及び露光装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003218022A (ja) * 2002-01-28 2003-07-31 Tokyo Electron Ltd 基板処理方法及び基板処理装置
CN113504711A (zh) * 2021-06-28 2021-10-15 上海华虹宏力半导体制造有限公司 光刻显影的检测方法

Also Published As

Publication number Publication date
TW527638B (en) 2003-04-11
KR20010098873A (ko) 2001-11-08
KR100781099B1 (ko) 2007-11-30

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