TW527638B - Evaluating method of lithography system, adjusting method for substrate-processing apparatus, lithography system and exposure apparatus - Google Patents

Evaluating method of lithography system, adjusting method for substrate-processing apparatus, lithography system and exposure apparatus Download PDF

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Publication number
TW527638B
TW527638B TW090109858A TW90109858A TW527638B TW 527638 B TW527638 B TW 527638B TW 090109858 A TW090109858 A TW 090109858A TW 90109858 A TW90109858 A TW 90109858A TW 527638 B TW527638 B TW 527638B
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Taiwan
Prior art keywords
substrate
pattern
photosensitive material
exposure
evaluation
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TW090109858A
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Chinese (zh)
Inventor
Yuji Imai
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

In normal exposure, a wafer on which a photoresist is coated through a resist coater is transferred onto a wafer stage of a projection exposure system for exposure and is followed by a development process to develop patterns through a developing device. When evaluating the characteristics, a specified evaluation mark image is exposed in a narrow region within an effective view field of a projection optical system at the projection exposure system for each shot region of the wafer coated with the photoresist; and by detecting the condition of the resist pattern after development, characteristics of the resist coater or the developing device are evaluated. When evaluating image characteristics of the projection exposure, a plurality of specified evaluation mark images are exposed over a wide region of the effective view field. Thus the invention can be used for independently evaluating performance of the individual apparatus built into the lithography system including the photoresist coater, the exposure apparatus, and the image development apparatus.

Description

527638 A7 ____ B7__ 五、發明說明（/ ) 【技術領域】 本發明係關於一種用來製造如半導體元件、液晶顯示 元件、電漿顯示元件、或是薄膜磁頭等元件的微影系統 (lithography system)之評價方法，尤特別的是，頗適用在具 有光阻塗布機、曝光裝置及顯像裝置（developer)的微影系 統。 【習知技術】 爲了要因應半導體元件的集積度及精細度的提高，對 於製造半導體元件的過程中之微影步驟（較代表性的有光 阻塗布步驟、曝光步驟、及光阻顯像步驟所構成）所使用 的曝光裝置，被要求須能提高其解析度及轉印精確度等之 成像特性。爲提高成像特性，乃針對曝光裝置進行開發， 例如：縮短曝光光束的波長、增大投影光學系統的數値孔 徑、以及變形照明等新的照明方式。 當改變曝光條件（曝光波長、投影光學系統的數値孔 徑、照明方式等）時，爲了評價其成像特性之實際提高狀 況，習知例如係將接近臨界解析度的線寬之線寬與間隙相 等（line and space)圖案的像，藉由投影光學系統投影在 塗布有光阻的晶圓上，並以掃描型電子顯微鏡（Scanning Electron Microscopy: SEM)對該晶圓被顯像後所得之光阻圖 案的線寬等進行測量，再將此測量結果與目前的測量數値 相較。但是，若運用此方法，除了在曝光裝置之外’尙須 具備掃描型電子顯微鏡，致使進行此評價的設備趨於高價 ，同時，評價的作業煩雜，且使評價所須時間拖長。 4 (請先閱讀背面之注意事項再填寫本頁) ----訂---------' 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 A7 r^ -- ^_ ___ 五、發明說明（义） 爲了簡化對曝光裝置的成像特性之評價，已知有經提 案之π平價方法，如日本專利第253〇〇8〇號公報所揭示，係 運用曝光裝置及蝕刻裝置在半導體基板上形成複數的電阻 圖案，藉由測夏該等電阻圖案的電阻値來間接地求得該電 阻圖案的尺寸。 如上所述，對曝光裝置本身之成像特性而言，確可藉 較習知簡便的方法來進行評價。但是，半導體元件的電路 圖案之最終形狀’非僅受到曝光裝置的成像特性所影響， 亦受到由光阻塗布機在晶圓上塗布光阻時所產生的塗布不 均’及由顯像裝置對晶圓（光阻）顯像時所產生的顯像不 均所影響。因此’一旦將曝光裝置組裝入含光阻塗布機、 顯像裝置、烘烤裝置、冷卻裝置的元件製造線之後，則不 易對曝光裝置本身特有的成像特性進行評價。 另一方面’爲了因應半導體元件的密度日漸提高，須 使微影系統所含的曝光裝置、光阻塗布機、顯像裝置等之 各裝置的性能達到最佳化，以提高微影系統整體的元件製 造精確度。 本發明係基於此觀點所完成者，其第1目的，係爲了 提供一種評價方法來對組裝於微影系統內之各裝置進行有 效的評價。本發明之第2目的，係提供一種評價及/或調整 方法，以提高微影系統的元件製造精確度。本發明之第3 目的，係提供一種能對組裝於微影系統內之各裝置的性能 進行有效評價的微影系統。 又，本發明之第4目的，係提供一種能輕易調整基板 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） (請先閱讀背面之沒意事項再填寫本頁)527638 A7 ____ B7__ 5. Description of the invention (/) [Technical Field] The present invention relates to a lithography system for manufacturing components such as semiconductor elements, liquid crystal display elements, plasma display elements, or thin film magnetic heads. The evaluation method is particularly suitable for a lithography system having a photoresist coater, an exposure device, and a developer. [Knowledge technology] In order to respond to the increase in the degree of integration and fineness of semiconductor devices, the lithography steps in the process of manufacturing semiconductor devices (the typical examples are photoresist coating steps, exposure steps, and photoresist development steps). (Construction) The exposure device used is required to improve its imaging characteristics such as resolution and transfer accuracy. In order to improve imaging characteristics, exposure devices have been developed, such as shortening the wavelength of the exposure beam, increasing the number of apertures in the projection optical system, and new illumination methods such as anamorphic illumination. When changing the exposure conditions (exposure wavelength, numerical aperture of the projection optical system, illumination method, etc.), in order to evaluate the actual improvement of its imaging characteristics, it is known that, for example, the line width of the line width close to the critical resolution is equal to the gap The image of the (line and space) pattern is projected on a wafer coated with photoresist by a projection optical system, and the photoresist obtained after the wafer is developed with a scanning electron microscope (Scanning Electron Microscopy: SEM) Measure the line width of the pattern, etc., and compare this measurement result with the current measurement number. However, if this method is used, a scanning electron microscope must be provided in addition to the exposure device, which makes the evaluation equipment expensive, and at the same time, the evaluation work is complicated, and the time required for evaluation is prolonged. 4 (Please read the precautions on the back before filling this page) ---- Order --------- 'This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 527638 A7 r ^-^ _ ___ V. Description of the invention (meaning) In order to simplify the evaluation of the imaging characteristics of the exposure device, the proposed π parity method is known, as disclosed in Japanese Patent No. 25308008. A plurality of resistance patterns are formed on a semiconductor substrate by using an exposure device and an etching device, and the size of the resistance pattern is obtained indirectly by measuring the resistance of the resistance patterns. As described above, the imaging characteristics of the exposure device itself can be evaluated by a more convenient and convenient method. However, the final shape of the circuit pattern of the semiconductor element is not only affected by the imaging characteristics of the exposure device, but also by the coating unevenness caused when the photoresist is applied on the wafer by the photoresist coater, and by the imaging device. It is affected by uneven development of wafer (photoresist) during development. Therefore, once the exposure device is assembled into a component manufacturing line including a photoresist coater, a developing device, a baking device, and a cooling device, it is not easy to evaluate the imaging characteristics peculiar to the exposure device itself. On the other hand, in order to respond to the increasing density of semiconductor devices, it is necessary to optimize the performance of each device included in the lithography system, such as the exposure device, photoresist coater, and development device, in order to improve the overall performance of the lithography system. Component manufacturing accuracy. The present invention has been completed based on this viewpoint, and its first object is to provide an evaluation method for effectively evaluating each device incorporated in a lithography system. A second object of the present invention is to provide an evaluation and / or adjustment method to improve the accuracy of element manufacturing of a lithography system. A third object of the present invention is to provide a lithography system capable of effectively evaluating the performance of each device assembled in the lithography system. In addition, the fourth object of the present invention is to provide a substrate that can be easily adjusted. 5 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 x 297 mm) (please read the unintentional matter on the back before filling out this page)

A · I I I----»11 — I I--- %· 527638 A7 ______B7 ___ 五、發明說明（；） 處理裝置的特性之調整方法，其中之基板處理裝置係與曝 光裝置共同構成微影系統。 . ------ (請先閱讀背面之注意事項再填寫本頁) 【發明槪要】 根據本發明之第1微影系統之評價方法，包含有感光 材料的塗布步驟、曝光步驟、及顯像步驟，俾在已塗布感 光材料的基板形成既定的顯像圖，並且包含：透過評價用 圖案(36A〜36D，48, 49, 62A〜62F)使塗布有感光材料的基板 (W1〜W4)受到曝光；將已曝光的基板予以顯像來形成顯像 圖案；觀測顯像圖案的形成狀態，如厚度、線寬、長度、 或位置；由該觀測結果，將分別對顯像圖案造成影響之前 述塗布步驟所特有的塗布因子、前述曝光步驟所特有的曝 光因子、以及前述顯像步驟所特有的顯像因子之至少一個 因子與其他因子獨立求得。 若藉由本發明，透過既定的評價用圖案使得實際上已 經塗布有感光材钭的基板受到曝光，並藉由將該曝光後的 基板（感光材料）予以顯像，而在該基板上形成感光材料 的凹凸圖案。此種情況，如將對該基板進行曝光時的視野 設定在既定的狹窄區域，則在曝光步驟（曝光裝置）之中 對顯像圖案造成影響的因子（成像特性等）幾爲一致，故 使所形成之感光材料的顯像圖案係受到塗布步驟（塗布裝 置）之因子的影響以及顯像步驟（顯像裝置）之因子的影 響而造成變化。在此，可藉由測量該圖案的狀態之中，如 厚度、或線寬分布等，來獨立評價塗布因子（塗布不均） ，或是顯像因子（顯像不均等）。再者，藉由將對該基板 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 A7 _B7______ 五、發明說明（A ) 進行曝光時的視野設在等同於實際之元件圖案所曝光之寬 的區域，對此視野的周邊部施以評價用圖案的曝光，遂形 成了受到曝光因子的變化之感光材料的顯像圖案。此時， 因爲減輕了塗布因子以及顯像因子的變化所造成的影響， 例如，可藉由將基板上的複數個位置所求得之測量値予以 平均，而能夠對曝光步驟的特性（曝光因子）進行獨立評 價。此時，該感光材料之圖案的狀態，可由曝光裝置所具 備之對準感測器（alignment sensor)所測量，可使評價的 進行趨於簡易且低成本。爲實施前述評價，評價用圖案含 有爲獨立求得塗布因子，顯像因子及曝光因子所特有的圖 案。 又，根據本發明之第2微影系統之評價方法，包含： 將感光材料塗布於基板的塗布裝置（54)、將塗布有感光 材料的基板予以曝光的曝光裝置（50)、以及將感光材料予 以顯像的顯像裝置(59);並且含有以下各步驟：第1步驟 ’藉前述塗布裝置將感光材料塗布於基板上（步驟 ^,120,128);第2步驟，藉前述曝光裝置，透過評價用 圖案（36A〜36C，48, 49, 62A〜62F)使得已塗布前述感光材 料的基板受到曝光（步驟1〇5, 123, Bl);第3步驟，藉 前述顯像裝置將前述基板的前述感光材料予以顯像（步驟 1〇6，124，132);第4步驟，對前述顯像後的基板上的前 述感光材料的顯像圖案予以測量（步驟107，11〇，125，133 );以及；第5步驟，係根據第4步驟的測量結果，將分 別對顯像圖案造成影響的前述塗布裝置的特性、前述曝光 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) £ 訂. 527638 A7 ______B7 _ 五、發明說明（t ) 裝置的特性、以及前述顯像裝置的特性之一特性與其他特 性作獨立評價（步驟108, 111，126, 134)。 --------------裝--- (請先閱讀背面之注意事項再填寫本頁) 採用第2微影系統之評價方法，亦同於第丨微影系統 之評價方法，易於將塗布裝置、曝光裝置、及顯像裝置之 任意1種裝置的特性與其他裝置的特性作獨立評價。 此時，該曝光裝置若具有投影系統(PL)來將光罩圖案 的像投影在基板上，則在該第2步驟中，係使該評價用圖 案的像通過該投影系統的有效視野內的既定之狹窄區域 (35A)而投影於基板上的複數分隔區域（SA);在該第5步驟 中，評價該塗布裝置或該顯像裝置的任一項特性。 又，亦可在第2步驟中，使該評價用圖案的像通過該 投影系統的有效視野內的既定之寬的區域(35)而投影於基 板上的複數分隔區域（SB)，在該第5步驟中，評價該曝光 裝置之該投影系統的任一項特性（成像特性等）。 又，若是該曝光裝置係令光罩與基板作同步移動來對 該基板實施曝光之掃描曝光型的曝光裝置，則在該第2步 驟中，亦可藉掃描曝光方式使該評價用圖案的像投影在該 基板上的複數分隔區域（SC);且在該第5項步驟中，評價 該曝光裝置的動態(dynamic)控制特性。 又，第2微影系統之評價方法，係進一步包含有以下 各步驟··第6步驟，係對於前述基板上的複數分隔區域所 形成的前述感光材料的顯像圖案，予以測量其前述測量方 向之長度偏差(dispersion);第7步驟，係對前述顯像裝置 的顯像不均進行評價。又，此評價方法進一步包含：第8 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 A7 -----〜___ B7 ___ 五、發明說明（έ ) 步驟，係藉前述塗布裝置將感光材料塗布於別的基板上； 第9步驟，係使異於前述評價用圖案的圖案之像，通過前 述投影系統的有效視野內之既定的寬的區域，投影在已塗 布前述感光材料的基板上之複數分隔區域，而使感光材料 曝光；第10步驟，係將第9步驟所曝光的感光材料予以顯 像；第11步驟，係對第1〇步驟所顯像之感光材料的顯像 圖案進彳了測量，來評價則述曝光裝置的則述投影系統之任 一特性。再者，可因應藉評價所得之前述投影系統的特性 ’來調整前述投影系統。當前述曝光裝置係使光罩與基板 作同步移動來對前述基板進行曝光之掃描曝光型的曝光裝 置時，進一步包含有：第12步驟，係在調整過投影系統之 後，藉塗布裝置將感光材料塗布於測試用基板；第13步驟 ，藉掃描曝光方式使評價用光罩的像投影在前述基板上的 複數分隔區域以使感光材料曝光；第14步驟’係將第13 步驟所曝光之感光材料予以顯像；以及，第15步驟’係觀 測及評價曝光裝置的動態控制特性。 本發明之第3微影系統之評價方法，具有：曝光裝置 (50)，將已塗布感光材料的基板(W)予以曝光；以及，基板 處理裝置（51)，係用來在前述感光材料之曝光前及曝光 後之至少一方時，對前述基板進行處理；並且包含：藉微 影系統將評價用圖案轉印至感光材料而形成轉印像；測量 轉印像的狀態；再根據該測量結果’將前述曝光裝置的特 性與前述基板處理裝置的特性作獨立評價。若藉由該評價 方法，測量該轉印後的感光材料的狀態（潛像等）’則可 9 (請先閱讀背面之注意事項再填寫本頁) --------訂--- •%· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 A7 ^_ B7______ 五、發明說明（7 ) 易於評價其特性。 在第3評價方法中，爲了要獨立的求得前述曝光裝置 的特性及基板處理裝置的特性，乃在使基板透過評價用圖 案受到曝光之際’根據欲求得之特性，來調整評價用圖案 之照明區域的大小。前述評價用圖案，含有爲了獨立求得 曝光裝置的特性及基板處理裝置的特性之圖案，並根據欲 獨立求得的特性來對圖案的顯像圖案進行觀測。基板處理 裝置係包含有：塗布裝置，將感光材料塗布於基板;以及顯 像裝置，係將已形成轉印像的感光材料予以顯像。 基板處理裝置（51)係在前述感光材料的曝光前與曝光 後之至少一方時’對前述基板進行處理，並與曝光裝置（ 5〇)((將塗布有感光材料的基板（W)予以曝光))共同構成 微影系統，基板處理裝置（51)的調整方法中包含：藉微影 系統將評價用圖案轉印至基板上的感光材料而形成轉印像 ;測量該轉印像的狀態；根據該測量結果，將前述基板處 理裝置的特性獨立於前述曝光裝置的特性而予以獨立檢測 。若藉由該調整方法’檢測該轉印後的感光材料的狀態（ 光阻圖案等）’可根據該檢測結果正確的評價此基板處理 裝置的的特性。基板處理裝置包含：塗布裝置，將感光材 料塗布於基板；及顯像裝置，將已形成轉印像的感光材料 予以顯像。此調整方法，乃是當所檢測的特性無法滿足既 定之値時，可藉調整基板處理裝置而獲得。 本發明之微影系統，係使既定的顯像圖案形成於塗布 有感光材料的基板者，包含有：塗布裝置（54)，將感光材 10 本紙張尺ϋ用中國國家標準（CNS)A4規^210 x 297公餐） (請先閱讀背面之注意事項再填寫本頁) ▼_t--------tr---------. 527638 A7 B7 五、發明說明（f ) 料塗布於基板；曝光裝置（50)，將塗布有感光材料的基板 予以曝光；顯像裝置（59)，對已曝光的感光材料予以顯像 :控制系統（22)，用來控制曝光裝置，俾藉前述曝光裝置 ，使得已藉前述塗布裝置而塗布有感光材料的基板，透過 既定的評價用圖案來進行曝光；感測器(23,24)，將前述曝 光裝置所曝光的前述基板以前述顯像裝置來予以顯像，感 測器即用來測量前述感光材料的顯像圖案的狀態；判定系 統（27)，根據該感測器的測量資訊，將分別對顯像圖案造 成影響之前述塗布裝置的特性，前述曝光裝置的特性及前 述顯像裝置的特性之任一項特性與其他特性作獨立的判定 。可分別對構成此微影系統的獨立裝置之特性進行測量， 易於維修，可形成精確度更佳的元件圖案。藉由此微影裝 置可實施本發明之評價方法。 前述感測器，可測量感光材料的塗布不均，顯像不均 及曝光裝置的成像特性之至少一項。曝光裝置包含有：投 影系統，係將評價用圖案之像投影在基板上;以及視野光圏 ，係用來限制由投影系統所照明之評價用圖案的照明視野; 而前述控制系統乃根據所判定的特性來控制前述視野光圏 。前述感測器，乃是裝設在曝光裝置者，因而，無須將新 的感測器導入系統中即可在系統內評價塗布裝置及顯像裝 置的特性。此已顯像之圖案，例如，只要能以搬送系統將 基板搬回至系統的生產線上且再回到曝光裝置即可。 本發明之曝光裝置，係透過光罩(R)將塗布有感光材料 的基板(W)予以曝光者，包含有：照明系統（1〜18)，係對前 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)A · II I ---- »11 — I I ---% · 527638 A7 ______B7 ___ V. Description of the invention (;) The method for adjusting the characteristics of the processing device, in which the substrate processing device and the exposure device together form a lithography system. . ------ (Please read the precautions on the back before filling out this page) [Invention Summary] The evaluation method of the first lithography system according to the present invention includes a coating step, an exposure step, and In the developing step, a predetermined development image is formed on a substrate coated with a photosensitive material, and the substrate includes a substrate coated with a photosensitive material (W1 to W4) through a pattern for evaluation (36A to 36D, 48, 49, 62A to 62F). ) Being exposed; developing the exposed substrate to form a developing pattern; observing the formation state of the developing pattern, such as thickness, line width, length, or position; the observation results will affect the developing pattern respectively At least one of the coating factor unique to the aforementioned coating step, the exposure factor unique to the aforementioned exposure step, and the imaging factor unique to the aforementioned developing step is obtained independently from other factors. According to the present invention, a substrate actually coated with a photosensitive material is exposed through a predetermined evaluation pattern, and the exposed substrate (photosensitive material) is developed to form a photosensitive material on the substrate. Bump pattern. In this case, if the field of view when the substrate is exposed is set to a predetermined narrow area, the factors (imaging characteristics, etc.) that affect the development pattern during the exposure step (exposure device) are almost the same, so The development pattern of the formed photosensitive material is affected by the factors of the coating step (coating device) and the factors of the development step (development device). Here, by measuring the state of the pattern, such as thickness or line width distribution, you can independently evaluate the coating factor (uneven coating) or the development factor (uneven imaging). Furthermore, by applying the Chinese National Standard (CNS) A4 specification (210 X 297 mm) to the paper size of this substrate 6 (210 X 297 mm) 527638 A7 _B7______ 5. Description of the invention (A) The field of view during exposure is equivalent to the actual The wide area exposed by the element pattern is exposed to the peripheral portion of the field of view by the evaluation pattern, and a developing pattern of a photosensitive material subjected to a change in the exposure factor is formed. At this time, because the influence caused by changes in the coating factor and the development factor is reduced, for example, the characteristics of the exposure step (exposure factor can be averaged by averaging the measurement values obtained at a plurality of positions on the substrate) ) For independent evaluation. At this time, the state of the pattern of the photosensitive material can be measured by an alignment sensor provided in the exposure device, so that the evaluation can be performed easily and at low cost. In order to perform the foregoing evaluation, the evaluation pattern includes a pattern unique to the coating factor, the development factor, and the exposure factor that are obtained independently. The evaluation method of the second lithography system according to the present invention includes a coating device (54) for coating a photosensitive material on a substrate, an exposure device (50) for exposing a substrate coated with a photosensitive material, and a photosensitive material. A developing device (59) for developing the image; and includes the following steps: the first step is to apply the photosensitive material on the substrate by the aforementioned coating device (steps ^, 120, 128); the second step is to utilize the aforementioned exposure device to pass the evaluation The pattern (36A ~ 36C, 48, 49, 62A ~ 62F) is used to expose the substrate to which the photosensitive material has been applied (steps 105, 123, and Bl); in the third step, the aforementioned substrate is used to expose the aforementioned substrate The photosensitive material is developed (steps 106, 124, 132); the fourth step is to measure the development pattern of the aforementioned photosensitive material on the substrate after the aforementioned development (steps 107, 11, 125, 133); And; the fifth step is based on the measurement results of the fourth step, the characteristics of the aforementioned coating device and the aforementioned exposure, which will affect the development pattern, respectively. 7 The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). %) (Please (Please read the notes on the back before filling this page.) Order. 527638 A7 ______B7 _ V. Description of the device (t) The characteristics of the device, and one of the characteristics of the aforementioned display device and other characteristics are independently evaluated (steps 108, 111 , 126, 134). -------------- Install --- (Please read the precautions on the back before filling this page) The evaluation method using the 2nd lithography system is the same as that of the 丨 lithography system The evaluation method makes it easy to independently evaluate the characteristics of any one of the coating device, the exposure device, and the developing device and the characteristics of the other devices. At this time, if the exposure device has a projection system (PL) to project an image of the mask pattern on the substrate, in the second step, the image of the evaluation pattern is passed through an effective field of view of the projection system. The predetermined narrow area (35A) is projected on the substrate into a plurality of divided areas (SA). In the fifth step, any one of the characteristics of the coating device or the developing device is evaluated. In the second step, the image of the evaluation pattern may be projected onto a plurality of partitioned areas (SB) on the substrate through a predetermined wide area (35) within the effective field of view of the projection system. In 5 steps, any characteristic (imaging characteristics, etc.) of the projection system of the exposure device is evaluated. In addition, if the exposure device is a scanning exposure type exposure device in which the photomask and the substrate are moved in synchronization to expose the substrate, in the second step, the image of the evaluation pattern can also be made by the scanning exposure method. A plurality of divided areas (SC) projected on the substrate; and in the fifth step, the dynamic control characteristics of the exposure device are evaluated. In addition, the evaluation method of the second lithography system further includes the following steps. The sixth step is to measure the development pattern of the photosensitive material formed on a plurality of divided regions on the substrate, and measure the measurement direction. The length deviation (dispersion); the seventh step is to evaluate the development unevenness of the aforementioned imaging device. In addition, this evaluation method further includes: The 8th paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 527638 A7 ----- ~ ___ B7 ___ V. Description of the invention (step) Steps, The photosensitive material is coated on another substrate by the coating device. Step 9 is to project an image of a pattern different from the evaluation pattern through a predetermined wide area within the effective field of view of the projection system, and project the image on a predetermined wide area. The plurality of divided areas on the substrate of the aforementioned photosensitive material are coated to expose the photosensitive material; Step 10 is to develop the photosensitive material exposed in Step 9; Step 11 is to develop the image developed in Step 10. The development pattern of the photosensitive material is measured to evaluate any characteristic of the projection system of the exposure device. Furthermore, the aforementioned projection system can be adjusted according to the characteristics of the aforementioned projection system obtained by evaluation. When the foregoing exposure device is a scanning exposure type exposure device that synchronously moves the photomask and the substrate to expose the substrate, the method further includes: Step 12: After adjusting the projection system, the photosensitive material is coated by the coating device. Coated on the test substrate; in step 13, the image of the evaluation mask is projected on a plurality of separated areas on the substrate by scanning exposure to expose the photosensitive material; in step 14, the photosensitive material exposed in step 13 is exposed It is developed; and step 15 'is to observe and evaluate the dynamic control characteristics of the exposure device. An evaluation method of a third lithography system according to the present invention includes: an exposure device (50) for exposing a substrate (W) coated with a photosensitive material; and a substrate processing device (51) used for The substrate is processed at least one of before and after exposure; and includes: transferring a pattern for evaluation to a photosensitive material by a lithography system to form a transfer image; measuring the state of the transfer image; and then according to the measurement result 'The characteristics of the exposure apparatus and the characteristics of the substrate processing apparatus were independently evaluated. If you use this evaluation method to measure the state of the photosensitive material (latent image, etc.) after the transfer, then you can 9 (Please read the precautions on the back before filling this page) -------- Order-- -•% · This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 527638 A7 ^ _ B7______ 5. Description of the invention (7) It is easy to evaluate its characteristics. In the third evaluation method, in order to obtain the characteristics of the exposure device and the substrate processing device independently, when the substrate is exposed through the evaluation pattern, the evaluation pattern is adjusted based on the desired characteristics. The size of the illuminated area. The evaluation pattern includes a pattern for independently determining the characteristics of the exposure apparatus and the characteristics of the substrate processing apparatus, and the development pattern of the pattern is observed based on the characteristics to be independently determined. The substrate processing device includes a coating device that applies a photosensitive material to the substrate, and a developing device that develops a photosensitive material that has formed a transferred image. The substrate processing device (51) processes the substrate at least one of before and after the exposure of the photosensitive material, and exposes the substrate with the exposure device (50) ((the substrate (W) coated with the photosensitive material) )) Forming a lithography system together, and the adjustment method of the substrate processing device (51) includes: forming a transfer image by transferring the evaluation pattern to a photosensitive material on the substrate by the lithography system; measuring the state of the transfer image; Based on the measurement results, the characteristics of the substrate processing apparatus are independently detected independently of the characteristics of the exposure apparatus. If the state of the photosensitive material after transfer (photoresist pattern, etc.) is detected by the adjustment method, the characteristics of the substrate processing apparatus can be accurately evaluated based on the detection result. The substrate processing device includes a coating device that applies a photosensitive material to a substrate, and a developing device that develops a photosensitive material that has formed a transferred image. This adjustment method can be obtained by adjusting the substrate processing device when the detected characteristics cannot meet a predetermined threshold. The lithography system of the present invention is a method for forming a predetermined development pattern on a substrate coated with a photosensitive material, and includes: a coating device (54), which uses 10 pieces of paper of the photosensitive material to comply with the Chinese National Standard (CNS) A4 regulations. ^ 210 x 297 public meal) (Please read the notes on the back before filling this page) ▼ _t -------- tr ---------. 527638 A7 B7 V. Description of the invention (f ) Material is coated on the substrate; the exposure device (50) exposes the substrate coated with the photosensitive material; the developing device (59) develops the exposed photosensitive material: a control system (22) for controlling the exposure device For example, by using the aforementioned exposure device, a substrate coated with a photosensitive material by the aforementioned coating device is exposed through a predetermined evaluation pattern; and a sensor (23, 24) is used to expose the aforementioned substrate exposed by the exposure device to The development device performs development, and the sensor is used to measure the state of the development pattern of the photosensitive material; the determination system (27), based on the measurement information of the sensor, will affect the development pattern separately. Characteristics of the coating device, Properties and characteristics of any one of said front and other characteristics of the developing device for the independent determination. The characteristics of the independent devices constituting the lithography system can be measured separately, easy to maintain, and can form a more accurate element pattern. With this lithographic apparatus, the evaluation method of the present invention can be implemented. The sensor can measure at least one of unevenness in coating of a photosensitive material, unevenness in development, and imaging characteristics of an exposure device. The exposure device includes: a projection system that projects an image of an evaluation pattern on a substrate; and a field of vision light that restricts the illumination field of the evaluation pattern illuminated by the projection system; and the aforementioned control system is based on the judgment Characteristics to control the aforementioned field of view. The aforementioned sensors are installed in the exposure device. Therefore, the characteristics of the coating device and the developing device can be evaluated in the system without introducing a new sensor into the system. For this developed pattern, for example, as long as the substrate can be returned to the production line of the system by the transfer system and then returned to the exposure device. The exposure device of the present invention is a person who exposes a substrate (W) coated with a photosensitive material through a photomask (R), and includes: an illumination system (1 to 18), which applies Chinese national standards to the first 11 paper sizes ( CNS) A4 size (210 X 297 mm) (Please read the precautions on the back before filling this page)

527638 A7 _____ B7 ______ 五、發明說明（？） 述光罩進行照明；基板台，係用來將基板定位；可變視野 光圈（14B)，用以切換前述照明系統之照明區域的大小；第 1感測器(24)，前述基板台上的基板上之顯像後的感光材料 的圖案形狀，係由此檢測器(24)測量其對應的物理量；第2 感測器（23)，前述基板台上的基板上之顯像後的感光材料 之圖案位置，係藉此檢測器(23)來測量；以及判定系統(27) ，係運用前述第1感測器及第2感測器之檢測結果，來對 前述基板上的感光材料的狀態進行評價。本發明之曝光裝 置，可評價塗布裝置及顯像裝置的特性。因此，藉由將此 曝光裝置組裝入微影系統，可簡化系統的維修作業，形成 系統性能之最大產能，可進一步提高元件的顯像圖案之精 確度。又，此曝光裝置，可實施本發明的評價方法。 進而，本發明之曝光裝置含有投影系統’將來自照明 系統的照明光投影至基板。判定系統係使前述第1感測器 及第2感測器之至少一方來評價投影系統的成像特性。前 述物理量係指感光材料的厚度，前述感光材料的狀態包含 感光材料的塗布不均及顯像不均。曝光裝置進一步具有控 制系統，來控制前述可變視野光圏，在對基板上的感光材 料的狀態進行評價時，係以控制系統來控制可變視野光圈 ，使其視野較觀測投影系統的成像特性時更窄。曝光裝置 所具備的第2感測器，非僅能用來測量顯像後的感光材料 的圖案位置，亦可用來實施基板對於來自投影系統之照明 光的對準ό 使用本發明之微影系統之元件製造方法，係包含有： 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)527638 A7 _____ B7 ______ 5. Description of the invention (?) The photomask is used to illuminate; the substrate table is used to position the substrate; the variable field aperture (14B) is used to switch the size of the lighting area of the aforementioned lighting system; The sensor (24), the pattern shape of the photosensitive material after development on the substrate on the substrate stage, is measured by the corresponding physical quantity by the detector (24); the second sensor (23), the substrate The position of the pattern of the photosensitive material after development on the substrate on the stage is measured by the detector (23); and the determination system (27) is performed by using the aforementioned first sensor and second sensor As a result, the state of the photosensitive material on the substrate was evaluated. The exposure device of the present invention can evaluate the characteristics of a coating device and a developing device. Therefore, by assembling this exposure device into the lithography system, the maintenance work of the system can be simplified, the maximum capacity of the system performance can be formed, and the accuracy of the development pattern of the component can be further improved. Moreover, this exposure apparatus can implement the evaluation method of this invention. Furthermore, the exposure apparatus of the present invention includes a projection system 'for projecting the illumination light from the illumination system onto the substrate. The determination system uses at least one of the first sensor and the second sensor to evaluate the imaging characteristics of the projection system. The aforementioned physical quantity refers to the thickness of the photosensitive material, and the state of the photosensitive material includes uneven coating and development unevenness of the photosensitive material. The exposure device further has a control system to control the aforementioned variable field of view. When evaluating the state of the photosensitive material on the substrate, the control system is used to control the variable field of view aperture to make its field of view better than the imaging characteristics of the observation projection system. When it is narrower. The second sensor of the exposure device can be used not only to measure the pattern position of the photosensitive material after development, but also to align the substrate to the illumination light from the projection system. Using the lithography system of the present invention The component manufacturing method includes: 12 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

A 裝 527638 A7 B7 ---------- --- 五、發明說明（^ ) 第1步驟，藉塗布裝置將感光材料塗布於基板上；第2步 驟’藉曝光裝置使塗布有前述感光材料的基板透過評價用 圖案來進行曝光；第3步驟，藉顯像裝置對前述基板的前 述感光材料予以顯像；第4步驟，對於顯像後的基板之感 光材料的顯像圖案予以測量；第5步驟，係根據第4步驟 的測量結果，將分別對顯像圖案造成影響的前述塗布裝置 的特性’前述曝光裝置的特性’以及前述顯像裝置的特性 之一特性，與其他特性作獨立評價；第6步驟，根據評價 所得的特性，對具有該評價特性之裝置進行調整；第7步 驟，係在第6步驟的調整之後，以元件形成用圖案代替評 價用圖案來實施第1〜第3步驟，使元件形成用的顯像圖 案形成於基板。若藉由該元件製造方法，可獨立評價構成 系統之獨立裝置的特性且能進行良好的調整，因此，可製 造出局產能及局精確度的兀件。 藉由本發明，提供一種測定方法，係對曝光裝置所曝 光的基板之感光材料的塗布狀態予以測定的方法，前述曝 光裝置包含有：照明系統，係對塗布有感光材料的基板進 行照明；以及檢測器，係將被照明的基板所反射的光予以 檢測；並且測定方法包含有：使塗布有感光材料的基板透 過評價用標記(mark)而受到感光；採用照明系統及檢測器 ，觀察經過感光之評價用標記之感光圖案的狀態來求得感 光材料的塗布狀態。藉由此方法，可使用曝光裝置來輕易 的檢查感光材料的塗布狀態。因而，可更一步的活用曝光 裝置在微影流程或微影系統中所發揮之功能。在此種測定 13 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） t--- (請先閱讀背面之注意事項再填寫本頁) .- 527638 A7 ________B7__ 五、發明說明（（I ) 方法中，亦可觀察評價用標記之感光後的潛像，或者，可 使用具繞射光柵狀的評價用標記之基板來觀察基板的繞射 光。或者，亦可將已感光的評價用標記予以顯像來觀察顯 像圖案。作爲前述檢測器，可在對基板進行曝光之時，對 基板的曝光位置實施對準之用的檢測器。又，透過評價用 標記使基板感光時，使用來自曝光裝置所具有之光源的光 〇 進而，藉由本發明，提供一種測定方法，係對曝光裝 置所曝光的基板之感光材料的顯像狀態予以測定的方法， 前述曝光裝置包含有：照明系統，係對塗布有感光材料的 基板提供照明；以及檢測器，係將被照明的基板所反射的 光予以檢測，測定方法包含有：使塗布有感光材料的基板 透過評價用標記(mark)而受到感光；使得已經感光的基板 顯像；採用前述照明系統及檢測器，觀察經過感光之評價 用標記之顯像圖案來求得感光材料的塗布狀態，俾對基板 的顯像狀態進行測定。藉由此方法，可使用曝光裝置來輕 易的檢查感光材料的顯像狀態。因而，可更一步的活用曝 光裝置在微影處理或微影系統中所發揮之功能。 [圖式之簡單說明] 圖1係微影系統之槪略構成圖，用來表示本發明之實 施形態的一例。 圖2係切除圖1中的投影曝光裝置的一部份後所形成 之構成圖； 圖3(a)係圖2的評價標記板33之俯視圖；圖3(b)係評 14 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 訂· 527638 A7 ___B7_____ 五、發明說明（A ) 價用標記48之放大俯視圖；圖3(c)係評價用標記49之放 大俯視圖。 圖4(a)係表示評價光阻塗布機及顯像裝置之評價用晶 圓的照光區域排列之俯視圖；圖4(b)係用來說明光阻圖案 49P的測量方法之放大截面圖；圖4⑷係用來說明光阻的 膜厚之測量方法的其他用例之放大截面圖。 圖5係兩端爲楔型之光阻圖案的測量方法之說明圖。 圖6(a)係表示投影曝光裝置的投影光學系統之評價用 晶圓的照光區域排列之俯視圖；圖6(b)係表示形成於該晶 圓上的各照光區域之光阻圖案之放大俯視圖。 圖7(a)係表示投影曝光裝置的動態控制特性之評價用 晶圓的照光區域排列之俯視圖；圖7(b)係在此時所使用之 測試用標線片之俯視圖。 圖8係表示本發明的實施形態之微影系統的評價順序 順序之前半部流程圖。 圖9係表示該微影系統的評價順序之後半部流程圖。 【較佳實施形態】 以下，將參照圖面來說明本發明之實施形態的一例。 本例之適用範圍在於，對含有光阻塗布機、投影曝光裝置 (曝光裝置），以及顯像裝置（developer)之半導體元件製 造用的微影系統進行各項特性的評價之情況。 圖1係本例的微影系統之槪略構成圖，在圖1之中， 設置有作爲基板處理裝置之塗布·顯像部51，係與圍繞著 投影曝光裝置50的密閉室(chamber)呈直列(in line)方式連 15 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） . I I --- (請先閱讀背面之注意事項再填寫本頁) · 527638 A7 B7 五、發明說明（6 ) 接，並且設置有電腦主機(host computer)27來統籌控制投 影曝光裝置50及塗布•顯像部51之整體動作。在此塗布 •顯像部51之中，配置有搬送線52，係採由中央部橫切 的方式來搬運作爲基板之用的晶圓，在搬送線52的一端， 具有第1晶圓匣53來容納未曝光的多數個晶圓，及第2晶 圓匣60來容納已曝光及顯像後的多數個晶圓；搬送線52 的另一端則設置在投影曝光裝置50的密閉室之側面之具有 快門（shutter)的搬送口（未圖示）之正前方。 又，在塗布·顯像部51之中，沿著搬送線52的一方 之側面且由第1晶圓匣53起朝著投影曝光裝置50之方向 ，分別依序設置有：光阻塗布機54，用來將作爲感光材料 用途的光阻塗布於晶圓；預烘烤裝置55，由加熱板等所構 成，係用來先行烘烤該晶圓上的光阻；以及冷卻裝置56， 用來將經過預烤的晶圓予以冷卻。冷卻裝置56 ’係將流有 冷卻水的管路及溫度感測器設置在裝載晶圓的基座構件之 內部者，又，可將帕爾帖(Peltier)元件等之吸熱元件塡入此 基座構件之裝置等。再者，沿著搬送線52的他方之側且爲 投影裝置50朝第2晶圓匣60之方向’設置有：後段烘烤 裝置57，將曝光後的晶圓上的光阻予以烘烤，亦即所謂 PEB (Post-Exposure Bake);冷卻裝置58 ’用來冷卻已實施 PEB的晶圓；以及顯像裝置59，用來將晶圓上的光阻予以 •顯像。 又，本例之投影曝光裝置50之中，作爲曝光對象的晶 圓W，係透過晶圓保持器38而保持於晶圓台39，晶圓台 16 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公爱） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------Φ. 527638 A7 ____B7 五、發明說明（Μ ) (請先閱讀背面之注意事項再填寫本頁) 39在晶圓基座40(參照圖2)作2維移動。又，第1導引構 件42係大致沿著搬送線52的中心軸的延長線而配置，沿 著該第1導引構件42配置著滑塊(slider) 43且被未圖示的 線性馬達所驅動，並配置第1支撐臂44來旋轉自如地上下 移動滑塊43以保持住晶圓。再者，第2導引構件46係配 置在垂直於第1導引構件42的端部上方，沿著第2導引構 件46設置有第2支撐臂47來保持晶圓並由未圖示的線性 馬達所驅動。第2導引構件46，係延伸到晶圓台39的晶 圓裝載位置；第2支撐臂47，在垂直於第2導引構件46 的方向亦具有滑塊。 又，在導引構件42, 46之相交位置的附近設置有可旋 轉及上下活動的收送支桿45，用來執行晶圓的預對準(pre-alignment)，在收送支桿45的周圍設置晶圓的外周部之切 槽部（把手部），以及位置檢測裝置(未圖示），用來檢測2 個邊緣(edge)部的位置。由導引構件42、26 ;滑塊43 ;支 撐臂44、47，以及收送支桿45等，構成晶圓裝載系統。 以下試舉一例來說明一般的微影步驟中的圖1之微影 系統的基本動作，根據電腦主機27的指令’由第1晶圓匣 53所取出的1張晶圓，經搬送線52被搬送至光阻塗布機 54來塗布光阻。該塗布有光阻的晶圓，沿著搬送線52依 序經過預烘烤裝置55及冷卻裝置56而被送至投影曝光裝 置的第1支撐臂44。之後，當滑塊43沿著第1導引構件 42到達收送支桿45的附近時，第1支撐臂44進行旋轉’ 將已經塗布有光阻的晶圓從第1支撐臂44移至收送支桿 17 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 A7 ___ B7_____ 五、發明說明（C ) 45上的位置A，在此處藉晶圓的外形基準進行中心位置及 旋轉角的調整（預對準）。之後’將晶圓移送至第2支撐 臂47且沿著第2導引構件46搬送至晶圓裝載位置，在此 係轉由晶圓台39上的晶圓保持器38所裝載。之後，使作 爲光罩(mask)用途的標線片（reticle)所具備的既定元件圖案 ，曝光在該晶圓（晶圓W)上之各照光區域（shot)。 結束曝光的晶圓W，沿著導引構件46、42被搬送至 塗布·顯像部51之搬送線52，之後，沿著搬送線52依序 通過後段烘烤裝置57及冷卻裝置58而被送至顯像裝置59 。繼而，藉由顯像裝置59所顯像完成之晶圓W的各照光 區域，形成了對應於標線片的元件圖案之凹凸狀的光阻圖 案。經由上述作業而顯像完成的晶圓W，沿著搬送線52 被收置入第2晶圓匣60。完成此項微影步驟之第2晶圓匣 60內的晶圓(例如，1批量(lot)的晶圓），係被搬送至飩刻或 離子植入等之圖案形成步驟以及光阻剝離步驟之製造線上 〇 爲了要使得在該晶圓W上形成的電路圖案符合設計數 値的容許範圍內，必須使得藉圖1的微影系統而形成於晶 圓W上的各照光區域所形成之光阻圖案’各自具備了高解 析度及高的轉印精確度。有鑑於此，須使得預先藉光阻塗 布機54在晶圓的全面塗布光阻時，儘可能的均勻塗布，且 需使光阻的厚度符合要求。再者，藉投影曝光裝置50來將 標線片的圖案曝光於晶圓時，必須在設定的目標曝光量的 條件下，儘可能的提高解析度及降低失真(偏移及倍率誤差 18 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) u m an 一口、· n ·>ϋ ϋ— ί n n n 527638 A7 _______B7___ 五、發明說明（) )，且’重疊曝光時儘可能提高疊合的精確度。最後，藉由 顯像裝置59來使晶圓的全面之光阻顯像時，必須儘可能顧 及顯像的均勻度及滿足其設定條件。亦即，進行曝光時， 須使光阻塗布機54的特性（此處指塗布不均），投影曝光 裝置50的特性（此處指成像特性、疊合精確度），以及顯 像位置59的特性（此處指顯像不均）皆能分別控制在既定 的容許範圍內。有鑑於此，本例之投影曝光裝置50之機構 組裝方面，能夠使得光阻塗布機54，投影曝光裝置50本 身’以及顯像裝置59的特性，分別與其他的裝置特性作獨 立評價。 圖2係本例的步進掃描方式之投影曝光裝置50的槪略 結構，在圖2之中，係使用ArF準分子雷射光源（波長 193nm)作爲曝光光源1。但是，亦可採KrF準分子雷射（ 波長248nm)、F2雷射（波長I57nm)、Κι*2雷射（波長 146nm)、YAG雷射的高次諧波產生裝置、半導體雷射的高 次諧波產生裝置、或是水銀燈等作爲曝光光源1。來自曝 光光源1之波長193nm的紫外脈衝光所形成之曝光光束IL ，通過光束匹配單元2(Beam Matching Unit，即BMU)，射 入至作爲光束調節用途的可變減光器3。用來控制晶圓上 的光阻之曝光量的曝光控制元件21，除了控制曝光光源1 的發光之開始及停止，以及輸出（振盪頻率數、脈衝能量 )的同時，係以階段性或連續性來調整可變減光器3之減 光率。. 通過可變減光器3的曝光光束IL，經過含透鏡系統 19 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） (請先閱讀背面之注意事項再填寫本頁) 丨··A 527638 A7 B7 ---------- --- 5. Description of the invention (^) In the first step, the photosensitive material is coated on the substrate by the coating device; in the second step, the coating is applied by the exposure device. The substrate of the photosensitive material is exposed through a pattern for evaluation; in a third step, the photosensitive material of the substrate is developed by a developing device; in a fourth step, a developing pattern of the photosensitive material of the substrate after development is applied. Measurement; the fifth step is based on the measurement result of the fourth step, which is a characteristic of the coating device that affects the development pattern, the characteristic of the aforementioned exposure device, and one of the characteristics of the aforementioned development device, and other characteristics Independent evaluation; Step 6: Adjust the device with the evaluation characteristics based on the characteristics obtained from the evaluation; Step 7: After the adjustment in Step 6, replace the evaluation pattern with the pattern for element formation to implement the first ~ In the third step, a development pattern for element formation is formed on the substrate. If the component manufacturing method is used, the characteristics of the independent devices constituting the system can be independently evaluated and good adjustments can be made. Therefore, it is possible to manufacture components with local production capacity and local accuracy. According to the present invention, there is provided a measuring method for measuring a coating state of a photosensitive material of a substrate exposed by an exposure device, the exposure device including: an illumination system for illuminating the substrate coated with the photosensitive material; and detection The device detects the light reflected by the illuminated substrate; the measurement method includes: making the substrate coated with a photosensitive material receive light through an evaluation mark; using an illumination system and a detector to observe the light The state of the photosensitive pattern for evaluation marks was used to determine the coating state of the photosensitive material. By this method, the exposure state can be used to easily check the coating state of the photosensitive material. Therefore, the functions of the exposure device in the lithography process or the lithography system can be further utilized. In this measurement, 13 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) t --- (Please read the precautions on the back before filling this page) .- 527638 A7 ________B7__ 5. Description of the invention ((I) In the method, it is also possible to observe the latent image after the evaluation mark is photosensitive, or it is possible to diffract the grating-shaped evaluation mark substrate to observe the diffraction light of the substrate. Alternatively, the photosensitive The evaluation mark is developed to observe the development pattern. As the aforementioned detector, a detector for aligning the exposure position of the substrate when the substrate is exposed. When the substrate is light-sensitive through the evaluation mark, Using light from a light source included in the exposure device. Furthermore, according to the present invention, there is provided a measuring method for measuring a developing state of a photosensitive material of a substrate exposed by the exposure device. The exposure device includes: illumination A system for providing illumination to a substrate coated with a photosensitive material; and a detector for detecting light reflected from the illuminated substrate, and the measurement method includes : The substrate coated with a photosensitive material is exposed to light through an evaluation mark; the substrate that has been exposed is developed; the aforementioned illumination system and detector are used to observe the development pattern of the evaluation mark that is exposed to light to obtain the light sensitivity The coating state of the material and the development state of the substrate are measured. With this method, the development state of the photosensitive material can be easily checked by using an exposure device. Therefore, the exposure device can be further utilized in lithography processing or micro [Simplified description of the figure] Fig. 1 is a schematic configuration diagram of a lithography system, which is used to show an example of an embodiment of the present invention. Fig. 2 is a diagram of the projection exposure device in Fig. 1 Figure 3 (a) is a plan view of the evaluation mark plate 33 in Figure 2; Figure 3 (b) is a review 14 This paper is in accordance with the Chinese National Standard (CNS) A4 (210 X 297) (Mm) (Please read the precautions on the back before filling in this page) Binding · 527638 A7 ___B7_____ V. Description of the invention (A) An enlarged top view of the mark 48 of value; Figure 3 (c) is an enlarged view of the mark 49 of evaluation Fig. 4 (a) is a plan view showing the arrangement of the illuminated areas of the evaluation wafers for the evaluation of the photoresist coater and the development device; and Fig. 4 (b) is an enlarged sectional view for explaining the measurement method of the photoresist pattern 49P Figure 4 is an enlarged cross-sectional view of another use case for explaining the method of measuring the film thickness of the photoresist. Figure 5 is an explanatory diagram of a method of measuring a wedge-shaped photoresist pattern at both ends. Figure 6 (a) is a projection Top view of the arrangement of the illuminated areas of the wafer for evaluation of the projection optical system of the exposure device; FIG. 6 (b) is an enlarged top view showing the photoresist pattern of each illuminated area formed on the wafer. FIG. 7 (a) shows Top view of the arrangement of the illuminated areas of the wafer for evaluation of the dynamic control characteristics of the projection exposure device; FIG. 7 (b) is a top view of the test reticle used at this time. Fig. 8 is a flowchart showing the first half of the evaluation procedure of the lithography system according to the embodiment of the present invention. FIG. 9 is a flowchart showing the latter half of the evaluation procedure of the lithography system. [Preferred Embodiment] Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings. The scope of application of this example lies in the evaluation of various characteristics of a lithographic system for manufacturing a semiconductor device including a photoresist coater, a projection exposure device (exposure device), and a developer device. FIG. 1 is a schematic configuration diagram of the lithography system of this example. In FIG. 1, a coating and developing unit 51 as a substrate processing apparatus is provided, and is shown in a closed chamber surrounding a projection exposure apparatus 50. In-line method with 15 paper sizes Applies to Chinese National Standard (CNS) A4 (210 X 297 mm). II --- (Please read the precautions on the back before filling this page) · 527638 A7 B7 5 6. Description of the invention (6), and a host computer 27 is provided for overall control of the overall operation of the projection exposure device 50 and the coating and developing section 51. A transfer line 52 is arranged in the coating / developing unit 51, and the wafer used for substrate transfer is transversely cut from the central portion. A first cassette 53 is provided at one end of the transfer line 52. To accommodate the majority of wafers that are not exposed, and the second wafer cassette 60 to accommodate the majority of wafers that have been exposed and developed; the other end of the transfer line 52 is located on the side of the sealed chamber of the projection exposure device 50 Directly in front of a transport port (not shown) with a shutter. Further, in the coating / developing unit 51, a photoresist coating machine 54 is provided in this order along the side of one side of the conveying line 52 and from the first cassette 53 toward the projection exposure device 50 in order. Is used to apply the photoresist as a photosensitive material to the wafer; the pre-baking device 55 is composed of a heating plate and the like, and is used to bake the photoresist on the wafer in advance; and a cooling device 56 is used to Cool the pre-baked wafer. The cooling device 56 ′ is a pipe in which cooling water flows and a temperature sensor are installed inside the base member on which the wafer is mounted, and a heat absorbing element such as a Peltier element can be incorporated into the base. Device of seat member, etc. Furthermore, a rear stage baking device 57 is provided along the other side of the transfer line 52 toward the projection device 50 toward the second wafer cassette 60 to bake the photoresist on the exposed wafer. The so-called PEB (Post-Exposure Bake); the cooling device 58 'is used to cool the wafer on which the PEB has been implemented; and the developing device 59 is used to develop and display the photoresist on the wafer. In the projection exposure apparatus 50 of this example, the wafer W as an exposure target is held on the wafer stage 39 through the wafer holder 38, and the wafer stage 16 is in accordance with Chinese National Standard (CNS) A4. Specifications (21〇x 297 public love) (Please read the precautions on the back before filling out this page) Installation -------- Order --------- Φ. 527638 A7 ____B7 V. Description of the invention (Μ) (Please read the precautions on the back before filling in this page) 39 Make a two-dimensional movement on the wafer base 40 (see Figure 2). In addition, the first guide member 42 is arranged substantially along an extension line of the central axis of the transport line 52, and a slider 43 is arranged along the first guide member 42 and is held by a linear motor (not shown). The first support arm 44 is driven and the slider 43 is rotatably moved up and down to hold the wafer. In addition, the second guide member 46 is disposed above an end perpendicular to the first guide member 42, and a second support arm 47 is provided along the second guide member 46 to hold the wafer and is held by an unillustrated Driven by a linear motor. The second guide member 46 extends to the wafer loading position of the wafer stage 39, and the second support arm 47 also has a slider in a direction perpendicular to the second guide member 46. In addition, a receiving rod 45 that can rotate and move up and down is provided near the intersection of the guide members 42 and 46 to perform pre-alignment of the wafer. A notch portion (handle portion) and a position detection device (not shown) are provided on the periphery of the wafer to detect the positions of the two edge portions. The wafer loading system is constituted by the guide members 42, 26; the slider 43; the support arms 44, 47; The following is an example to explain the basic operation of the lithography system of FIG. 1 in a general lithography step. According to the instruction of the computer host 27 'a wafer taken out from the first wafer cassette 53 is transferred to the transfer line 52 to The photoresist coater 54 applies a photoresist. The photoresist-coated wafer passes through the pre-baking device 55 and the cooling device 56 along the transfer line 52 and is sent to the first support arm 44 of the projection exposure device. After that, when the slider 43 reaches the vicinity of the receiving support rod 45 along the first guide member 42, the first support arm 44 rotates to move the wafer on which the photoresist has been applied from the first support arm 44 to the receiving arm. Sending rod 17 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 527638 A7 ___ B7_____ V. Position A on 45 of the description of the invention (C) 45, which is based on the shape of the wafer Adjustment of center position and rotation angle (pre-alignment). After that, the wafer is transferred to the second support arm 47 and transferred to the wafer loading position along the second guide member 46, where it is loaded by the wafer holder 38 on the wafer table 39. After that, a predetermined element pattern included in a reticle used as a mask is exposed to each shot area on the wafer (wafer W). The wafer W after the exposure is conveyed along the guide members 46 and 42 to the conveyance line 52 of the coating and developing unit 51, and then sequentially passes through the post-stage baking device 57 and the cooling device 58 along the conveyance line 52. Send to development device 59. Then, a concave-convex photoresist pattern corresponding to the element pattern of the reticle is formed in each illuminated area of the wafer W developed by the developing device 59. The wafer W that has been developed through the above operations is placed in the second wafer cassette 60 along the transfer line 52. The wafers (for example, a lot of wafers) in the second wafer cassette 60 that have completed this lithography step are patterning steps and photoresist stripping steps that are transferred to engraving or ion implantation. On the manufacturing line, in order to make the circuit pattern formed on the wafer W meet the allowable range of the design data, it is necessary to make the light formed by each illuminated area formed on the wafer W by the lithography system of FIG. 1. Each of the resist patterns has high resolution and high transfer accuracy. In view of this, it is necessary to make the photoresist coating machine 54 apply the photoresist to the wafer as uniformly as possible, and the thickness of the photoresist must meet the requirements. In addition, when the pattern of the reticle is exposed on the wafer by the projection exposure device 50, it is necessary to increase the resolution and reduce the distortion as much as possible under the set target exposure amount (offset and magnification error 18 sheets) Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 public love) (Please read the precautions on the back before filling this page) um an sip, · n · > ϋ ϋ— ί nnn 527638 A7 _______B7___ V. Invention ()), And 'the overlap accuracy should be as high as possible when overlapping exposure. Finally, when the entire photoresist of the wafer is developed by the developing device 59, it is necessary to consider the uniformity of the developing as much as possible and satisfy the set conditions. That is, when performing the exposure, the characteristics of the photoresist coater 54 (here, coating unevenness), the characteristics of the projection exposure device 50 (here, imaging characteristics, superposition accuracy), and the development position 59 The characteristics (here referred to as uneven development) can be individually controlled within a predetermined allowable range. In view of this, in terms of the mechanism assembly of the projection exposure device 50 of this example, the characteristics of the photoresist coating machine 54, the projection exposure device 50 itself ', and the developing device 59 can be independently evaluated from other device characteristics. Fig. 2 is a schematic structure of a projection exposure device 50 of the step scanning method of this example. In Fig. 2, an ArF excimer laser light source (wavelength 193 nm) is used as the exposure light source 1. However, it is also possible to use KrF excimer laser (wavelength 248nm), F2 laser (wavelength I57nm), clip * 2 laser (wavelength 146nm), YAG laser harmonic generation device, semiconductor laser higher order A harmonic generating device or a mercury lamp is used as the exposure light source 1. The exposure light beam IL formed by the ultraviolet pulse light having a wavelength of 193 nm from the exposure light source 1 passes through a beam matching unit 2 (beam matching unit (BMU)) and is incident on a variable light reducer 3 for beam adjustment. The exposure control element 21 used to control the exposure amount of the photoresist on the wafer, in addition to controlling the start and stop of the light emission of the exposure light source 1, and the output (the number of oscillation frequencies and pulse energy), is staged or continuous To adjust the dimming rate of the variable dimmer 3. . The exposure beam IL through the variable light reducer 3 passes through the lens-containing system. 19 This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) (Please read the precautions on the back before filling in this page).丨 ··

_ I III---^ * I I I--I I I %. 527638 A7 _____ B7 五、發明說明（IQ ) 4A、4B之光束成形系統5，射入至作爲第1段的光學積分 器(均質器）的第1複眼透鏡6(fly eye lens)。由該第1複眼 透鏡6所射出的曝光光束IL，通過第1透鏡系統7A，光 程折射鏡8，以及第2透鏡系統7B，射入至作爲第2段的 光學積分器之用的第2複眼透鏡9。 在第2複眼透鏡9的射出面，亦即相對於曝光對象之 標線片R的圖案面（標線片面）的光學傅立葉(Fourier)轉 換面（照明系統的瞳面），開口光圈板10係藉驅動馬達 10L來旋轉自如。開口光圏板10，係可自由地切換在一般 照明用的圓形之開口光圏板l〇a、輪帶照明用之開口光圈 板l〇b、含複數（例如4個）個偏心的小開口之變形照明 用的開口光圏板（未圖示）、或是小的相干係數(coherence factor) ( σ値）所使用的小圓形的開口光圈板（未圖示） 。用來控制投影曝光裝置50的整體動作之主控制系統22 ，係透過驅動馬達l〇e來旋轉開口光圈板1〇而設定照明條 件。 圖2之中，曝光光束IL由第2複眼透鏡9射出且通過 一般照明用的開口光圏板l〇a，射入在高透射率且低反射 率之分束器11。由分束器11所反射的曝光光束，透過聚 光用的透鏡19射入至由光電檢測器所構成之積分感測器 (integrator sensor)20。積分感測器20的檢測信號則輸入曝 光控制元件21。預先以高精確度測量積分感測器20的檢 測信號與作爲被曝光基板的晶圓W上之曝光光束IL的照 度之相關性，並記憶在曝光控制元件21內的記億體。其結 20 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------· 527638 A7 ____B7__ _ 五、發明說明（θ ) 構爲，曝光控制元件21，透過積分感測器20的檢測信號 ，可間接的監測曝光光束IL對晶圓W的照度（平均値） ，以及其積分値。 透射過分束器11的曝光光束IL，沿光軸ΙΑΧ依序經 過透鏡系統12、13、射入在固定式遮簾（固定照明視野光 圏）14Α以及可動式遮簾（可動視野光圈）14Β。後者之 可動式遮簾14Β係設置在面對標線片面之共軛面；前者之 固定式遮簾14Α係設置在由該共軛面起散焦（defocus)既定 量之面。固定式遮簾14A，例如特開平4-196513號公報及 其對應的美國專利第5,473,410號所揭示般，在投影光學 系統PL的圓形視野內的中央具開口部，此開口部的方向 係垂直於掃描曝光方向且呈直線狹縫狀，或是矩形狀（以 下，統一以「狹縫狀」稱之）延伸。再者，對應於本發明 之可變視野光圏的可動式遮簾14B，係爲了防止在掃插_ 光的開始時及終了時對晶圓上W的各照光區域造成多餘@ 曝光，故使照明視野區域的掃描方向之寬度得予改變者。 又，可動式遮簾14B，亦可將垂直於掃描方向的方向（非 掃描方向）之標線片R的圖案區域之大小予以改變，或| ，亦可如以下所揭示般，根據所評價對象來使其寬度成爲 可變者。亦將可動式遮簾14B的開口率的資訊輸至曝光控 制元件21，將該開口率乘以取自積分感測器2〇的檢測信 號所得之照度，所得之値則爲晶圓W上的實際照度。 一般之曝光狀態時，通過固定式遮簾14A的曝光光束 IL，通過光程折射鏡15，成像用透鏡16、副聚焦透鏡系統 21 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------- (請先閱讀背面之注意事項再填寫本頁} 訂· 527638 A7 ____B7___ 五、發明說明（/1 ) 17、以及主聚集透鏡系統18，照明在標線片（作爲光罩用 途）R的圖案面（下面）的照明區域（照明視野區域）35 。根據曝光光束1L，使在標線片R的照明區域內的電路圖 案之像，透過兩側之遠心式(telecentric)投影光學系統PL， 以既定的投影倍率A (/5之數値’可列舉如1/4、等）， 轉印在配置於投影光學系統PL的成像面之晶圓W (作爲 被曝光基板之用）上的光阻層之狹縫狀的曝光區域（與照 明區域35爲共軛的圖案像之投影區域）35P°可將標線片 R及晶圓W分別視爲第1物體及第2物體，並使晶圓 (wafer)爲半導體（砂元素等）或 SOI(silicon on insulator) 等之圓板狀的基板。以下之說明中，將以平行於投影光學 系統PL的光軸AX者爲Z軸，與Z軸互爲垂直的平面內 之掃描方向（在此係指與圖2的紙面平行的方向）爲Y軸 ;與掃描方向互爲垂直的非掃描方向（在此係指垂直於圖 2的紙面之方向）爲X軸。 在圖2之中，標線片R係以被吸附的方式保持於標線 片台31 ;標線片台31，係可在標線片基座32上朝Y方向 作等速移動，同時，可朝X方向、Y方向、旋轉方向作微 動。可藉由驅動控制元件34內的雷射干涉計，來即時(real time)測量出標線片台31(標線片R)的2維位置及旋轉角 。根據該測量結果，以及從主控制系統22所得之控制資訊 ，使驅動控制元件34內的驅動馬達（線性馬達或音圈馬達 )，控制標線片台31的掃描速度及位置。又，驅動控制元 件34，係根據從主控制系統22所得之控制資訊，設定可 22 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------mF-裝--- (請先閱讀背面之注意事項再填寫本頁) · 527638 A7 ___ B7____ 五、發明說明（/ ) 動式遮簾14B的開口大小，或是對掃描方向的開關。此外 ，將玻璃基板所構成的評價標記板33固定在標線片台31 的標線片R的附近。 圖3(a)係一俯視圖，用來表示使圖2的評價標記板33 的中心大致與光軸AX —致的狀態，在圖3(a)之中，於進 行投影曝光裝置50的特性評價時，係使二點虛線所示之曝 光光束的照明區域35，大致覆蓋於評價標記板33的整體 。照明區域35之設定，係大致內接於圖2的投影光學系統 PL的圓形之有效視野，爲垂直於掃描方向SD(Y方向）之非 掃描方向（X方向）的細長狀矩形區域，又，評價標記板 33所形成的評價用標記，係位在照明區域35的內部且靠 近照明區域35的4個頂點的位置，例如，此例之中係形成 了 4個2維的同一型式之評價用標記36A、36B……36M。 評價用標記36A爲一種2維的標示，乃是組合了 X軸標記 37X及Y軸標記37Y ; X軸標記37X，係在X方向以既定 間距排列之線寬與間隙相等圖案所形成；Y軸標記37Y， 係在Y方向以既定間距排列之線寬與間隙相等圖案所形成 。構成評價用標記36A之線寬與間隙相等的線寬，例如， 可爲圖2的投影光學系統PL的臨界解析度之1倍〜2倍的 線寬。此時，亦可將線寬(pitch、duty等）各異的複數之線 寬與間隙相等圖案來構成各個評價用標記。 另一方面，當進行圖1的光阻塗布機54、或顯像裝置 59的特性評價時，係藉由縮小圖2的可動式遮簾14B的開 口 ’將照明區域35A設定在以圖3(A)的評價標記板33的 23 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐〉 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂----- 527638 A7 ______B7____ 五、發明說明（/丨） 中央部之光軸AX爲中心之狹窄區域，即單點虛線所示之 區域。照明區域35A之寬度，舉一例而言，係分別相對於 照明區域35的X方向、Y方向的寬度的1/5左右，在照明 區域35A的中央部之評價標記板33係形成有2個相鄰的 評價用標記48、49。因照明區域35A已被侷限在以投影光 學系統PL的視野中的光軸AX爲中心之狹窄區域，故而， 照明區域35A內的圖案之像，係在大致沒有發生各種像差 的狀態下，透過投影光學系統PL投影在像面側。 在此種狀況時，位在一端的評價用標記48，係如圖 3(b)的放大圖所示般，在垂直於測量方向的方向（即Y方 向）以既定間距，將複數的標記48a〜48e予以排列而形成 ;而複數的標記48a〜48e的形狀乃是在測量方向（此爲X 方向）呈細長菱形，亦即，其測量方向的兩端部爲楔型。 標記48a〜48e中最粗部份的線寬，係圖2的投影光學系統 PL的臨界解析度的1倍〜2倍，評價用標記48，係使用於 對圖1的顯像裝置59進行特性評價時。位在他端之評價用 標記49，係如圖3(c)之放大圖所示般，乃是在Y方向以既 定間距所排列的線寬與間隙相等圖案。評價用標記49的各 標記線寬，乃是數倍於投影光學系統PL的臨界解析度之 較粗線寬，評價用標記49，係使用於對圖1的光阻塗布機 54進行特性評價時。 在圖2中，晶圓W係透過晶圓保持器38被吸附並保 持在晶圓台39上，晶圓台39，乃是在晶圓基座4〇上沿著 平行於投影光學系統PL的像面之XY平面作2維移動。亦 24 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)_ I III --- ^ * II I--III%. 527638 A7 _____ B7 V. Description of the invention (IQ) 4A, 4B beam shaping system 5 is injected into the optical integrator (homogenizer) as the first stage The first fly eye lens 6 (fly eye lens). The exposure light beam IL emitted by the first fly-eye lens 6 passes through the first lens system 7A, the optical path refraction mirror 8, and the second lens system 7B, and enters the second optical integrator for the second stage. Compound eye lens 9. On the exit surface of the second fly-eye lens 9, that is, the optical Fourier conversion surface (the pupil surface of the illumination system) with respect to the pattern surface (the reticle surface) of the reticle R of the exposure target, the aperture plate 10 series Rotate freely by the drive motor 10L. The opening diaphragm plate 10 can be freely switched between a circular opening diaphragm plate 10a for general lighting, an opening diaphragm plate 10b for wheel belt lighting, and a plurality of (eg, four) eccentric small plates. Aperture diaphragm (not shown) for deformed illumination of the opening, or a small circular aperture diaphragm (not shown) used for a small coherence factor (σ 値). The main control system 22 for controlling the overall operation of the projection exposure device 50 sets the lighting conditions by rotating the opening diaphragm plate 10 by driving the motor 10e. In FIG. 2, the exposure light beam IL is emitted from the second fly-eye lens 9 and passes through an aperture plate 10a for general illumination and enters a beam splitter 11 having a high transmittance and a low reflectance. The exposure light beam reflected by the beam splitter 11 passes through a condenser lens 19 and is incident on an integral sensor 20 composed of a photodetector. The detection signal of the integration sensor 20 is input to the exposure control element 21. The correlation between the detection signal of the integration sensor 20 and the illuminance of the exposure light beam IL on the wafer W as a substrate to be exposed is measured in advance with high accuracy, and is stored in the memory of the exposure control element 21. The final 20 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page). -------- Order ----- ---- · 527638 A7 ____B7__ _ 5. Description of the Invention (θ) The exposure control element 21 can indirectly monitor the illuminance of the exposure beam IL on the wafer W (average 値) through the detection signal of the integration sensor 20. ), And its points 値. The exposure beam IL transmitted through the beam splitter 11 passes through the lens systems 12 and 13 along the optical axis IAX, and is incident on a fixed curtain (fixed illumination field light) 14A and a movable curtain (movable field aperture) 14B. The latter movable curtain 14B is provided on the conjugate surface facing the reticle; the former fixed curtain 14A is provided on the surface defocused from the conjugate surface by a predetermined amount. The fixed blind 14A is disclosed in, for example, Japanese Unexamined Patent Publication No. 4-196513 and its corresponding U.S. Patent No. 5,473,410. The center of the projection optical system PL has an opening in a circular field of view, and the direction of the opening is vertical. It is a linear slit shape or a rectangular shape (hereinafter, collectively referred to as a "slit shape") extending in the scanning exposure direction. Furthermore, the movable shade 14B corresponding to the variable field of view light beam of the present invention is to prevent unnecessary @exposure to each illuminated area of W on the wafer at the beginning and end of the scanning light, so that The width of the scanning direction of the illuminated field of view may be changed. In addition, the movable shade 14B can also change the size of the pattern region of the reticle R in a direction perpendicular to the scanning direction (non-scanning direction), or |, or according to the evaluation target as disclosed below To make its width variable. The information of the aperture ratio of the movable shade 14B is also input to the exposure control element 21, and the aperture ratio is multiplied by the illuminance obtained from the detection signal obtained from the integral sensor 20, and the obtained volume is the value on the wafer W. Actual illumination. In the normal exposure state, the exposure light beam IL passing through the fixed curtain 14A passes through the optical path refraction mirror 15, the imaging lens 16, and the sub-focus lens system 21. The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297) Mm) --------------- (Please read the notes on the back before filling out this page} Order 527638 A7 ____B7___ V. Description of the invention (/ 1) 17 and the main focusing lens System 18, illuminating the illumination area (illumination field of view) 35 on the pattern surface (below) of the reticle (for use as a mask) 35. According to the exposure light beam 1L, the circuit pattern in the illumination area of the reticle R is The image is transmitted through the telecentric projection optical system PL on both sides at a predetermined projection magnification A (number of / 5, such as 1/4, etc.), and transferred to the imaging disposed on the projection optical system PL. The slit-shaped exposure area of the photoresist layer on the wafer W (for the substrate to be exposed) (projection area of the pattern image conjugated to the illumination area 35) 35P ° can be used to mark the reticle R and the crystal The circle W is regarded as a first object and a second object, respectively, and the wafer is a semiconductor ( Sand-like substrate) or SOI (silicon on insulator), etc. In the following description, the optical axis AX parallel to the projection optical system PL will be referred to as the Z axis, and in a plane perpendicular to the Z axis. The scanning direction (here refers to the direction parallel to the paper surface of FIG. 2) is the Y axis; the non-scanning direction that is perpendicular to the scanning direction (here refers to the direction perpendicular to the paper surface of FIG. 2) is the X axis. In FIG. 2, the reticle R is held on the reticle table 31 in an adsorbed manner; the reticle table 31 can be moved at a constant speed in the Y direction on the reticle base 32, and at the same time, Make micro movements in the X direction, Y direction, and rotation direction. The laser interferometer in the drive control element 34 can be used to measure the real-time 2D position of the reticle table 31 (reticle R) and Rotation angle. Based on the measurement results and control information obtained from the main control system 22, the drive motor (linear motor or voice coil motor) in the drive control element 34 controls the scanning speed and position of the reticle table 31. The drive control element 34 is set according to the control information obtained from the main control system 22 22 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ------------ mF-pack --- (Please read the precautions on the back before filling this page ) 527638 A7 ___ B7____ 5. Description of the invention (/) The opening size of the movable curtain 14B, or the switch for the scanning direction. In addition, the evaluation mark plate 33 made of a glass substrate is fixed on the reticle table 31 The vicinity of the reticle R. Fig. 3 (a) is a top view showing a state where the center of the evaluation mark plate 33 of Fig. 2 is approximately aligned with the optical axis AX. In Fig. 3 (a), In the evaluation of the characteristics of the projection exposure device 50, the illumination area 35 of the exposure light beam shown by the two-dot chain line is made to substantially cover the entire evaluation mark plate 33. The setting of the illumination area 35 is an effective field of view of a circle substantially inscribed in the projection optical system PL of FIG. The evaluation marks formed by the evaluation mark plate 33 are located inside the lighting area 35 and near the four vertices of the lighting area 35. For example, in this example, four two-dimensional evaluations of the same type are formed. Mark 36A, 36B ... 36M. The evaluation mark 36A is a two-dimensional mark, which is a combination of the X-axis mark 37X and the Y-axis mark 37Y; the X-axis mark 37X is formed by a pattern of equal line widths and gaps arranged at a predetermined pitch in the X direction; the Y-axis The mark 37Y is formed by a pattern of line widths and gaps arranged at a predetermined pitch in the Y direction. The line width constituting the evaluation mark 36A and the line width equal to the gap may be, for example, a line width of 1 to 2 times the critical resolution of the projection optical system PL of FIG. 2. In this case, each evaluation mark may be formed by patterning plural line widths and gaps having different line widths (such as pitch and duty). On the other hand, when the characteristic evaluation of the photoresist coater 54 or the developing device 59 of FIG. 1 is performed, the illumination area 35A is set to be as shown in FIG. 3 ( A) 23 of the evaluation mark plate 33 This paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling this page) Order ----- 527638 A7 ______B7____ 5. Description of the invention (/ 丨) The optical axis AX in the center is a narrow area centered on the area, that is, the area shown by a single dotted line. The width of the lighting area 35A, for example, is Two adjacent evaluation marks 48 and 49 are formed on the evaluation mark plate 33 in the central portion of the illumination area 35A with respect to the width of the X direction and the Y direction of the illumination area 35, respectively. 35A has been confined to a narrow area centered on the optical axis AX in the field of view of the projection optical system PL. Therefore, the image of the pattern in the illumination area 35A is transmitted through the projection optical system in a state where almost no aberrations occur. PL is projected on the image plane side. The evaluation marks 48 are formed by arranging a plurality of marks 48a to 48e at a predetermined pitch in a direction perpendicular to the measurement direction (ie, the Y direction) as shown in the enlarged view of FIG. 3 (b); The shape of the marks 48a to 48e is an elongated rhombus in the measurement direction (this is the X direction), that is, both ends of the measurement direction are wedge-shaped. The thickest line width of the marks 48a to 48e is a drawing. 1 to 2 times the critical resolution of the projection optical system PL of 2 and the evaluation mark 48 is used to evaluate the characteristics of the developing device 59 of Fig. 1. The evaluation mark 49 located at the other end is such as As shown in the enlarged view of FIG. 3 (c), it is a pattern in which the line width and the gap are arranged at a predetermined pitch in the Y direction. The line width of each mark of the evaluation mark 49 is several times that of the projection optical system PL. The thicker line width of the critical resolution, the evaluation mark 49, is used to evaluate the characteristics of the photoresist coater 54 in Fig. 1. In Fig. 2, the wafer W is sucked and held by the wafer holder 38. On the wafer stage 39, the wafer stage 39 is parallel to the projection on the wafer base 40. XY plane of the image plane of the optical system PL for 2-dimensional movement. 24 is also applicable Chinese Paper-scale national standards (CNS) A4 size (210 X 297 mm) (Please read the back of the precautions to fill out this page)

527638 A7 ___B7 ____ 五、發明說明（ 即，晶圓台39，除了在晶圓基座40上朝著Y方向以一定 的速度移動的同時，朝X方向、Y方向作步進式移動。再 者，晶圓台39亦組裝入Z測平機構來控制晶圓W的Z方 向之位置（聚焦位置）以及X軸及Y軸之旋轉的傾斜角。 又，在投影光學系統PL的側面，具有：投射光學系統 25A，將細縫像傾斜的投影在晶圓W的表面（被檢測面） 之複數的測量點；以及受光光學系統25B，用來接受該被 檢測面的反射光來產生對應於該複數的測量點之聚焦位置 的聚焦信號，投影光學系統25A及受光光學系統25B構成 爲多點式的自動對焦感測器，此等之聚焦信號係輸至主控 制系統22中的對焦控制部。 在進行掃描曝光時，該主控制系統22中的對焦控制部 ，乃是根據此等之聚焦信號（聚焦位置），以自動對焦的 方式，使晶圓台39中的Z軸測平機構作連續的驅動。藉 此，使晶圓W的表面對焦於投影光學系統PL的像面。又 ，在進行特性評價時，例如，可根據此等之聚焦信號來驅 動Z軸測平機構，藉此可將晶圓W的聚焦位置予以調整任 意的量。 晶圓台39的X方向、Y方向的位置，以及X軸、γ 軸、Z軸的旋轉之旋轉角，係藉由驅動控制元件41內的雷 射干涉計來即時測量。根據該測量結果加上從主控制系統 27所獲得之控制資訊，使得驅動控制元件41內的驅動馬 達（線性馬達等），實施對晶圓台39的掃描速度及位置的 控制。 25 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂----- 527638 A7 __ B7________ 五、發明說明（W ) 又，在進行掃描曝光之際’必須先將標線片R及與晶 圓W予以實施對準。因此，乃在標線片台31上設置有標 線片的對準顯微鏡（未圖示）’用來測量標線片11的對準 標記（標線片標記）的位置。再者’爲了測量晶圓w上的 對準標記（晶圓標記）的位置’在投影光學系統PL的側 面以離軸(Off axis)的方式設置著圖像處理方式(FIA方式：527638 A7 ___B7 ____ 5. Description of the invention (that is, the wafer stage 39 moves stepwise in the X direction and the Y direction while moving on the wafer base 40 at a certain speed in the Y direction. Furthermore, The wafer table 39 is also equipped with a Z-leveling mechanism to control the Z-direction position (focus position) of the wafer W and the tilt angles of the X-axis and Y-axis rotation. In addition, the side of the projection optical system PL has: The projection optical system 25A projects a plurality of measurement points obliquely onto the surface (detected surface) of the wafer W; and the light receiving optical system 25B is configured to receive reflected light from the detected surface to generate the light corresponding to the The focus signals of the focus positions of the plurality of measurement points are configured as a multipoint autofocus sensor by the projection optical system 25A and the light receiving optical system 25B, and these focus signals are input to a focus control unit in the main control system 22. When performing scanning exposure, the focus control unit in the main control system 22 continuously makes the Z-axis leveling mechanism in the wafer table 39 continuous based on these focus signals (focus positions). Drive By this, the surface of the wafer W is focused on the image plane of the projection optical system PL. In addition, when performing the characteristic evaluation, for example, the Z-axis leveling mechanism can be driven based on these focus signals, whereby the crystal can be adjusted. The focus position of the circle W can be adjusted by an arbitrary amount. The positions in the X and Y directions of the wafer stage 39 and the rotation angles of the X-axis, γ-axis, and Z-axis rotations are driven by lasers in the drive control element 41 The interferometer is used for real-time measurement. Based on the measurement result and the control information obtained from the main control system 27, the drive motor (linear motor, etc.) in the drive control element 41 is used to implement the scanning speed and position of the wafer table 39. 25. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page). -------- Order ----- 527638 A7 __ B7________ 5. Description of the Invention (W) In addition, when scanning exposure, 'the reticle R and the wafer W must be aligned first. Therefore, a reticle 31 is provided with a mark Line sheet alignment microscope (not shown) 'is used to measure graticules Position of the alignment mark (reticle mark) of the sheet 11. Furthermore, 'to measure the position of the alignment mark (wafer mark) on the wafer w' is off-axis on the side of the projection optical system PL Method sets the image processing method (FIA method:

Field Image Alignment方式）的弟1對準感測器23。對準感 測器23，例如，以鹵素燈等較寬的波長區域之照明光照射 在被檢標記，將該被檢標記像與指標標記一倂予以攝影， 對所求得之圖案信號予以處理’求得被檢標記之相對於該 指標標記之X方向、Y方向所具有的位置偏置量’同時’ 求得構成該被檢標記之各標記之線寬’將所求得之測量値 輸入至主控制系統22。 又，在投影光學系統PL的側面設置著採離軸方式之 第2對準感測器24，以進行以他種方式來實施對晶圓標記 所在位置之測量。對準感測器23及24係分別對應於本發 明之第2感測器及第1感測器。對應感測器24之結構，含 有 LIA ( Laser Interferometric Alignment)方式的感測器 24a (以下僅以「LIA感測器24a」稱之）以及LSA(Laser step alignment)方式的感測器（以下僅以LSA感測器24b稱之 ))。LIA感測器24a係將頻率數僅有極小差異的2道光束 (亦有一道光束者），照射在呈繞射光柵狀的被檢標記’ 予以檢測從該被檢標記所產生之複數的繞射光所構成之干 涉光，LSA感測器24b，係使圓點列狀的被檢標記與呈狹 26 (請先閱讀背面之注意事項再填寫本頁) · I 丨 1 I I I I ν^- «1ΙΙΙΙΙ — — . 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 ------B7____ 五、發明說明（>f) 縫狀照射的雷射光束實施相對掃描，予以檢測從該被檢標 記所產生的繞射光者。關於LIA感測器24a，例如，特開 平2-227602號公報（日本專利第2814520號及其對應之美 國專利第5,489,986號）予以詳細揭示；關於LSA感測器 24b，例如，特開昭60-130742號公報（特公平6-16478號 公報及其對應之美國專利4,677,301號）予以詳細揭示。 又，在本例之中，亦可取代LIA感測器24a，而使得所採 用之感測器的受光方式，係將1束相干性雷射光束大致垂 直地照射於被檢標記，使從該被檢標記所產生之至少一對 的繞射光（例如爲次數相等之±n次之繞射光）產生干涉 〇 LIA感測器24a的干涉光之光電變換信號（檢測信號 )，以及LSA感測器24b的繞射光之光電變換信號（檢測 信號）係各自輸入主控制系統22中的對準信號處理部。在 實施對準動作時，對準信號處理部係根據LIA感測器24a 或LSA感測器24b的檢測信號，與晶圓台39的座標之測 量値，來檢測被檢標記之座標。又，在進行微影系統的特 性評價時，該對準信號處理部，係根據LIA感測器24a的 檢測信號的大小，來計算出被檢標示的光阻圖案之厚度， 且藉由LSA感測器24b的檢測信號與晶圓台39的座標， 來計算出被檢標記在測量方向的長度。 又，藉對準感測器23或24來實施晶圓W的對準後即 進行掃描曝光。亦即，主控制系統22，將標線片台31及 晶圓台39之各自的移動位置、移動速度、移動加速度及位 27 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ' 一 " ------------^裝—— (請先閱讀背面之注意事項再填寫本頁) 訂： 527638 A7 ______B7____ 五、發明說明（A) 置偏置(offset)等各種資訊，輸入驅動控制元件34及41。 對應於此，標線片R透過標線片台31並對向於曝光光束 IL的照明區域35，以速度Vr沿著+Y方向（或-Y方向） 進行掃描，同時，晶圓W透過晶圓台39並對向於標線片 R的圖案像之曝光區域35P，以速度/5 · Vr(/5爲從標線片 R至晶圓W的投影倍率)沿著-Y方向（或+Y方向）進行掃 描。此時，爲防止在掃描曝光開始時及終了時對不要的部 份造成曝光，乃藉驅動控制元件34來控制可動式遮簾14B 的開關動作。標線片R與晶圓W的移動方向之所以爲逆向 ，乃是因爲在本例的投影光學系統PL係實施翻轉投影之 故。 再者，主控制系統22，係從具各種曝光條件之曝光資 料檔案裡讀取出在進行掃描曝光時能使晶圓W上之各照光 區域的光阻獲得適量曝光量者，且連同曝光控制元件21來 實施最佳之曝光順序。亦即，一旦主控制系統22對曝光控 制元件21發出對晶圓W上的1個照光區域進行掃描曝光 開始的指令，則曝光控制元件21在開始令曝光光源1發光 的同時，並透過積分感測器20來計算出曝光光束IL對晶 圓的照度（每單位時間內之脈衝能量的和）之積分値。此 項積分値乃是在掃描曝光開始時被重置爲0。接著，曝光 控制元件21，係逐次算出其照度的積分値，根據所獲之結 果’來控制曝光光源1的輸出（振動頻率數及脈衝能量） 以及可變減光器3的減光率，以使掃描曝光後的晶圓W上 之光阻的各點能獲得適當曝光量。又，對該照光區域所進 28 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) 丨· 裝 ϋ n I— n 0 n an 1 Ban 527638 A7 ___B7 _ 五、發明說明（ 行的掃描曝光終了時，使曝光光源1的發光停止。 之後，將以圖8及圖9所示之流程圖，來說明對本例 之圖1的微影系統中的光阻塗布機54，投影曝光裝置50， 以及顯像裝置59之特性進行評價（評價順序）之一例。此 類之特性評價可定期實施，然而，如光阻的種類變更，或 是顯像步驟有變更時，此類情況時亦適宜實施。 首先，在圖8的步驟101中，係根據電腦主機27的 控制，藉圖1的光阻塗布機54將光阻塗布在未曝光的晶圓 W1，之後，使該晶圓W1經過預烘烤裝置55及冷卻裝置 56而裝載在投影曝光裝置50的晶圓台39(晶圓保持器38) 上（步驟102)。其後，驅動圖2的標線片台31，使得評價 標記板33的中心正對於投影光學系統PL的有效視野之中 心（光軸AX)(步驟103)，控制可動式遮簾14B，如同圖 3(A)所揭示般，將曝光光束IL的照明區域設定在有效視野 的中央之狹窄的照明區域35A(步驟104)。在此狀態下，僅 有評價用標記48、49能受到照明，得在大致不產生任何投 影光學系統PL的像差之狀態下來投影評價用標記48,49的 像。 在步驟105之中，將圖2的投影曝光裝置50視爲整 批曝光型的投影曝光裝置，以步進重複方式（step and repeat)，透過投影光學系統PL，將照明區域35A內的評價 用標記48,49的像曝光在晶圓W1上之各照光區域SA。 圖4(a)係表示依上述所曝光之晶圓w，在此圖4(a)之 中，晶圓W1的曝光面具有N1個照光區域 29 度適用中國國家標準（CNS)A4規格（210 X 297公釐1 (請先閱讀背面之注意事項再填寫本頁)Field Image Alignment method). Align the sensor 23, for example, illuminate the test mark with illumination light in a wide wavelength region such as a halogen lamp, and photograph the test mark image and the index mark together, and process the obtained pattern signal 'Find the position offsets of the mark under test in the X and Y directions relative to the index mark' Simultaneously 'Find the line width of each mark that constitutes the mark under test' Enter the obtained measurement 値To the main control system 22. A second off-axis alignment sensor 24 is provided on the side of the projection optical system PL to measure the position of the wafer mark by another method. The alignment sensors 23 and 24 correspond to the second sensor and the first sensor of the present invention, respectively. Corresponding to the structure of the sensor 24, it includes a LIA (Laser Interferometric Alignment) sensor 24a (hereinafter referred to as "LIA sensor 24a") and a LSA (Laser step alignment) sensor (hereinafter only Called LSA sensor 24b))). The LIA sensor 24a irradiates 2 beams (also having one beam) with only a small difference in frequency on the inspection mark in the form of a diffraction grating to detect a complex winding generated from the inspection mark. Interfering light consisting of incident light, LSA sensor 24b, is made up of dots in a row-like inspection mark and narrow 26 (Please read the precautions on the back before filling in this page) · I 丨 1 IIII ν ^-«1ΙΙΙΙΙ — —. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 527638 ------ B7____ V. Description of the invention (> f) The slit beam laser beam is scanned relative to each other, The diffracted light generated from the mark under test is detected. Regarding the LIA sensor 24a, for example, Japanese Unexamined Patent Publication No. 2-227602 (Japanese Patent No. 2814520 and its corresponding U.S. Patent No. 5,489,986) is disclosed in detail; regarding the LSA sensor 24b, for example, Japanese Patent Application Laid-Open No. Sho 60- No. 130742 (Japanese Patent Publication No. 6-16478 and its corresponding U.S. Patent No. 4,677,301) are disclosed in detail. Also, in this example, instead of the LIA sensor 24a, the light receiving method of the adopted sensor is to irradiate a coherent laser beam approximately perpendicularly to the mark under inspection, The at least one pair of diffracted light generated by the mark under test (for example, equal to ± n times of diffracted light) generates interference. The photoelectric conversion signal (detection signal) of the interference light of the LIA sensor 24a, and the LSA sensor The photoelectric conversion signals (detection signals) of the diffracted light of 24b are input to the alignment signal processing section in the main control system 22, respectively. When performing the alignment operation, the alignment signal processing unit detects the coordinates of the detected mark based on the detection signal of the LIA sensor 24a or the LSA sensor 24b and the measurement of the coordinates of the wafer stage 39. In addition, when evaluating the characteristics of the lithography system, the alignment signal processing unit calculates the thickness of the photoresist pattern of the mark to be detected based on the magnitude of the detection signal of the LIA sensor 24a. The detection signal of the detector 24b and the coordinates of the wafer stage 39 are used to calculate the length of the inspection mark in the measurement direction. After the wafer W is aligned by the alignment sensor 23 or 24, scanning exposure is performed. That is, the main control system 22 sets the respective moving positions, moving speeds, moving accelerations, and positions 27 of the reticle stage 31 and the wafer stage 39. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). Li) 'a " ------------ ^ install—— (Please read the precautions on the back before filling this page) Order: 527638 A7 ______B7____ 5. Description of the invention (A) Offset (offset) and other information are input to the drive control elements 34 and 41. Correspondingly, the reticle R passes through the reticle stage 31 and scans the illumination area 35 facing the exposure beam IL at a speed Vr in the + Y direction (or -Y direction), and at the same time, the wafer W passes through the crystal The circular table 39 faces the exposure area 35P of the pattern image facing the reticle R at a speed of / 5 · Vr (/ 5 is the projection magnification from the reticle R to the wafer W) along the -Y direction (or + Y direction). At this time, in order to prevent exposure to unnecessary parts at the beginning and end of the scanning exposure, the opening and closing operation of the movable shade 14B is controlled by the drive control element 34. The reason why the moving directions of the reticle R and the wafer W are reverse is because the projection optical system PL in this example performs a flip projection. In addition, the main control system 22 reads from the exposure data file with various exposure conditions, which can make the photoresist of each illuminated area on the wafer W obtain an appropriate amount of exposure during scanning exposure, and together with the exposure control The element 21 performs an optimal exposure sequence. That is, once the main control system 22 issues an instruction to the exposure control element 21 to start scanning exposure of one illumination area on the wafer W, the exposure control element 21 starts to cause the exposure light source 1 to emit light, and transmits an integral sense. The detector 20 calculates the integral 値 of the illuminance (sum of pulse energy per unit time) of the exposure beam IL on the wafer. This integral is reset to 0 at the beginning of the scan exposure. Next, the exposure control element 21 calculates the integral 値 of its illuminance successively, and controls the output of the exposure light source 1 (the number of vibration frequencies and pulse energy) and the light reduction rate of the variable light reducer 3 according to the obtained result ' An appropriate amount of exposure can be obtained at each point of the photoresist on the wafer W after scanning exposure. In addition, the 28 paper sizes entered in the illuminated area are in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 public love) (Please read the precautions on the back before filling this page) 丨 · Decoration n I— n 0 n an 1 Ban 527638 A7 ___B7 _ 5. Description of the invention (When the scanning exposure of the line ends, the light source 1 is stopped from emitting light. Then, the flowchart shown in FIG. 8 and FIG. 9 will be used to explain FIG. 1 of this example. Is an example of the evaluation (evaluation order) of the characteristics of the photoresist coating machine 54, the projection exposure device 50, and the developing device 59 in the lithography system. Such characteristics evaluation can be performed periodically, however, if the type of photoresist is changed It is also suitable to implement such a situation when the development step is changed. First, in step 101 of FIG. 8, the photoresist is coated on the photoresist coater 54 of FIG. 1 according to the control of the computer host 27. The unexposed wafer W1 is then loaded on the wafer stage 39 (wafer holder 38) of the projection exposure apparatus 50 through the pre-baking device 55 and the cooling device 56 (step 102). Then, the reticle table 31 of FIG. 2 is driven so that the evaluation mark The center of the plate 33 is exactly the center of the effective field of view of the projection optical system PL (optical axis AX) (step 103), and the movable shade 14B is controlled to set the illumination area of the exposure beam IL as disclosed in FIG. 3 (A). The narrow illumination area 35A in the center of the effective field of view (step 104). In this state, only the evaluation marks 48 and 49 can be illuminated, and the projection can be performed in a state where almost no aberration of the projection optical system PL is generated. Images of evaluation marks 48 and 49. In step 105, the projection exposure apparatus 50 of FIG. 2 is regarded as a batch exposure type projection exposure apparatus, and the projection optical system PL is passed through the projection optical system in a step and repeat manner. The images of the evaluation marks 48 and 49 in the illumination area 35A are exposed to the respective illumination areas SA on the wafer W1. Fig. 4 (a) shows the wafer w exposed as described above, and Fig. 4 (a) here Among them, the exposure surface of the wafer W1 has N1 illumination areas 29 degrees applicable to China National Standard (CNS) A4 specifications (210 X 297 mm 1 (please read the precautions on the back before filling this page)

527638 A7 _ B7___ 五、發明說明（汕） SAl5SA2.......SAN1(在此以「照光區域SA」來稱全體），各 (請先閱讀背面之注意事項再填寫本頁) 照光區域係在X方向、Y方向與狹窄的照明區域35A之共 軛像爲大致相同大小者；分別使評價用的標記48,49的像 48P、49P曝光在各照光區域SA。在其後的步驟106中， 係使曝光後的晶圓W1通過圖1的後段烘烤裝置57及冷卻 裝置58而搬送至顯像裝置59，在顯像裝置59中，使晶圓 W1上的光阻顯像，經顯像後的晶圓W1經過搬送線52而 再度的裝載於投影曝光裝置50的晶圓台39上。此時，在 圖4(a)之晶圓W1的各照光區域SA，各自形成了與評價用 標記48,49的像48P、49P相對應的凹凸狀之光阻圖案（亦 作爲48P，49P)。後者之光阻圖案49P，正如同圖4(b)所示 般，是在X方向以既定間距排列之繞射光柵狀標記，前者 之光阻圖案48P，正如同圖5(a)所示般，是兩側爲楔型之 複數的凹凸圖案。 %· 隨後的步驟107中，係根據圖2的主控制系統22的 控制，操作對準感測器24中的LIA感測器24a，檢測出圖 4(a)之晶圓W1上的全部之照光區域SA所發生的光阻圖案 49之干涉光（繞射光）強度所對應的檢測信號，將檢測結 果輸至電腦主機27。如圖4(b)所示般，從LIA感測器24a 之2道光束LA、LB照射在光阻圖案49P，從光阻圖案 49P之光束LA的+ 1次繞射光LA1，與光束LB的-1次繞 射光LB1構爲平行而產生干涉光，將該干涉光予以檢測。 此時，因爲此干涉光的強度之平均値，係根據各照光區域 SA所殘存的光阻膜厚(亦即光阻圖案49P的段差)而產生變 30 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 A7 ______Β7 _ 五、發明說明（4 ) 化，故而，可先預作實驗將光阻圖案49Ρ的段差與該干涉 光的檢測信號之平均値的關係先以圖表化，預存在電腦主 機27的檔案裡。接著，電腦主機27，求出該各照光區域 SA的干涉光之檢測信號的平均値，以及，藉該圖表求出殘 存在晶圓W上之光阻膜厚的分布，同時，藉由此種膜厚分 布，來推定由光阻塗布機54將光阻塗布在晶圓W1時之平 均膜厚以及膜厚偏差(dispersion)(例如標準偏差），將之 視爲塗布不均。 在隨後的步驟108中，由電腦主機27來判定光阻塗 布機54有否異狀，亦即，由步驟107所推定之光阻的平均 膜厚，以及膜厚的偏差程度，與該種類的光阻之目標値（ 偏差爲〇)相較，來判定是否處在容許範圍內，有異狀時 ，向操作者發出光阻塗布機54的警示資訊。因此而進入步 驟109的光阻塗布機54之維修作業。之後，亦可重複步驟 101〜108之評價順序施加在其他未曝光的晶圓W2。 再者，上述的實施形態中，爲進行對光阻塗布機54的 評價，係檢測顯像後的光阻圖案49P，然而，亦可如圖 4(c)所揭示般’預先在晶圓W1上之各照光區域SA形成凹 凸的繞射光柵狀的標記61，將光阻PH塗布在晶圓W1上 之後，使得自LIA感測器24a的光束LA、LB照射在該標 記61，繼而檢測該標記615之的干涉光(LAI、LB1)。此時 ，該標記61之干涉光強度的平均値’係隨著該照光區域 SA上的光阻PH的膜厚而變化’因此’無須實施曝光及顯 像，即可從LIA感測器24a的檢測信號求得晶圓W1上的 31 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------· 本紙張尺度適用f國國標準（CNS)A4規格（210 x 297公爱^ 一 527638 A7 ________B7____ 五、發明說明（W ) 光阻PH的膜厚分布。在此例中，因爲係節省了曝光步驟 及顯像步驟，乃可在短時間內進行對光阻塗布機54的評價 。又，始自LIA感測器24a的光束LA、LB，應不被光阻 PH所吸收，亦即，光的波長對光阻PH不發生感光作用。 又，亦可藉形成在光阻之評價用標記49的潛像代替顯 像後的光阻圖案49P，並藉由LIA感測器24a等予以檢測 ，再根據檢測結果來求得光阻的平均膜厚及膜厚偏差。此 時，因可節省光阻的顯像步驟，故可在短時間內進行光阻 塗布機54的評價。始自LIA感測器24a的光束LA、LB， 應不被光阻PH所吸收，亦即，光的波長對光阻PH不發生 感光作用。 同樣的，亦可使圖2之投影曝光裝置50具有干涉計方 式或橢圓量測計方式的膜厚測定，在曝光前藉由此膜厚測 定器來直接測量晶圓上的光阻之厚度分布。又，亦可採用 如原子間力顯微鏡等，來檢測光阻的膜厚及其偏差程度等 。又，將評價用標記48、49轉印於光阻來推定上述的塗布 不均時，在本例之作法係使評價用標記48、49位在投影光 學系統PL的投影視野的中央（光軸AX上），將投影光學 系統PL的像差所產生的影響視爲大致不存在。然而，當 無法忽略投影光學系統PL的像差時，宜採用未受到上述 的塗布不均等影響的測量方法，例如，在投影光學系統PL 的像面側將評價用標記投影像予以檢測，亦即，藉所謂的 空間像測量，先求得投影光學系統PL的像差資訊（球面 像差等），並使用此像差資訊來決定上述之塗度不均。 32 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） . ^^1 --- (請先閱讀背面之注意事項再填寫本頁) . 527638 A7 五、發明說明（P ) ------------裝--- (請先閱讀背面之注意事項再填寫本頁) 又，步驟109之光阻塗布機54的維修作業，亦包含 了對光阻的塗布條件之重新設定（變更）等丨以旋轉塗敷式 (spin on)者包括晶圓的旋轉速度或旋轉數等；以掃描塗敷 式（scan coat)者包括晶圓或噴嘴的移動速度等丨。再者，亦 可根據步驟107所求得之膜厚或其偏差等，使操作者進行 對光阻塗布機54的g周整，或者，由電腦主機27對光阻塗 布機54下達指令來進行該塗布條件的變更等。 %· 接著’當光阻塗布機54無異狀產生時，動作由步驟 108移轉至步驟110，此際之圖2的主控制系統22，係採 用對準感測器24中的LSA感測器24b，將自圖4(a)的晶圓 W1上的全部照光區域SA的光阻圖案48P的繞射光所對應 的檢測信號，對應於晶圓台39的X座標而求得。如圖 5(A)的照光區域SAi所揭示般，從LSA感測器24b的雷射 光束LS照射在朝Y方向延伸的狹縫狀，將晶圓台39朝X 方向驅動，使光阻圖案48P與雷射光束LS相對掃描，當 雷射光束LS照射在光阻圖案48P的任一部份時，從光阻 圖案48P產生繞射光。在此之主控制系統22，係求得當其 繞射光的檢測信號之數値在既定値以上時之晶圓台39的X 座標記範圍，令在此範圍之照光區域SAi的光阻圖案48P 的長度爲LX1。同樣的，主控制系統22求得全部的照光區 域SA中的光阻圖案48P之長度，將測量値輸入電腦主機 27 〇 此時；例如，若是圖5(b)的照光區域SAj之顯像狀態 不佳時，因爲光阻圖案48P的長度LX2亦小於LX1，因此 33 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 A7 _________B7__ 五、發明說明（；丨） ’遂使光阻圖案48的長度對應於顯像狀態。根據於此，電 腦主機27，將以晶圓W1上的全部之照光區域SA的光阻 圖案48P之長度的平均値，以及偏差程度（如標準偏差） ’視爲顯像裝置59之光阻顯像時的顯像不均。 在其後的步驟111之中，電腦主機27，將檢查顯像裝 置59有否異狀，亦即，將步驟uo所求得之顯像不均（光 阻圖案48P的長度之平均値及偏差），與該種類的光阻所 規範的目標値（偏差程度爲〇)相較，判定是否在容許範 圍內，若有異狀發生時，向操作者發出顯像裝置59的警示 資訊。據此而執行步驟112之顯像裝置59的維修作業。又 ，在步驟112由操作者或電腦主機27等根據該顯像不均來 變更顯像裝置59的顯像條件（例如顯像時間等）。之後， 亦可再實施步驟101〜106，110，111的評價順序。 接著，若顯像裝置59亦無異狀產生時，動作由步驟 111移轉至圖9的步驟120，進行投影曝光裝置50的成像 特性之評價。因此，根據電腦主機27的控制，藉圖1的光 阻塗布機54將光阻塗布於未曝光的晶圓(W3)，之後，使 該晶圓W3經過預烘烤裝置55及冷卻裝置56而裝載於投 影曝光裝置50的晶圓台39上（步驟121)。其後，使圖2 的評價標記板33的中心正對於光軸AX，打開可動式遮簾 14B的開口，將曝光光束IL的照明區域設定在圖3(a)所示 之一般大小的照明區域35(步驟122)。在此狀態下’可使 投影光學系統PL的有效視野之周邊部的評價用標記 36A〜36D能獲得照明。 34 (請先閱讀背面之注意事項再填寫本頁) 裝 · 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 A7 ____B7____ 五、發明說明（P ) 在步驟123之中，將圖2的投影曝光裝置50視爲整 批曝光型的投影曝光裝置，以步進重複方式，將照明區域 35內之評價用標記36A〜36D的像透過投影光學系統PL曝 光於晶圓W3上之各照光區域SB。 圖6(a)係表示經由所揭示方式所曝光的晶圓W3，此 圖6(a)之中，晶圓W3的曝光面具有N2個（N2<N1)照光 區域SB。SB2……SBN2(在此以「照光區域SB」來稱全體) ，各照光區域係在X方向、Y方向與細長的照明區域35 的共軛像爲大致相同大小者，分別使評價用標記36A〜36D 的像36AP〜36DP曝光在各照光區域SB。在之後的步驟 124中，將曝光後的晶圓W3通過圖1的後段烘烤裝置57 及冷卻裝置58搬送至顯像裝置59，在顯像裝置59之中， 將晶圓3上的光阻予以顯像，顯像後的晶圓W3透過搬送 線52，再度裝載於投影曝光裝置50的晶圓台39上。此時 ，圖6(a)之晶圓W3的各照光區域SB，分別形成了對應於 評價用標記36A〜36D的像之凹凸狀光阻圖案（亦爲 36AP〜36DP)。最典型的光阻圖案36AP，係如圖6(b)所示 般，由分別排列在X方向及Y方向之凹凸狀線寬與間隙相 等圖案37XP、37YP所構成。 在隨後的步驟125中，係根據圖2的主控制系統22 的控制，採用FIA方式的對準感測器23，測量圖6(a)之晶 圓W3上之全部的照光區域SB的光阻圖案36AP〜36DP的 線寬及位置（X座標、Y座標），將測量値輸至電腦主機 27。例如，圖6(b)之光阻圖案36AP，係測量線寬與間隙相 35 __________ ____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂--------- % 527638 A7 ___B7___ 五、發明說明（〇 ) --- (請先閱讀背面之注意事項再填寫本頁) 等圖案37ΧΡ、37ΥΡ的凸部（光阻部）之寬度hX、hY。 此時’因本實施例已經將光阻塗布機54及顯像裝置59調 整至具有良好特性，因此，光阻圖案36AP〜36DP的線寬及 位置，乃是依存於投影光學系統PL的成像特性（解析度 及像差等）。但是，因光阻塗布機54及顯像裝置59尙有 若干程度之塗布不均及顯像不均殘存，故而，電腦主機27 將所測得的全部之照光區域SB內的光阻圖案36AP〜36DP 的線寬及位置予以平均，來求得投影光學系統PL的像面 之光阻圖案36AP〜36DP的線寬及位置。又，電腦主機27 ，係藉由將該線寬與設計値相較來進行對投影光學系統PL 的解析度之評價，並藉由將該4個光阻圖案36AP〜36DP的 位置與設計値相較，來進行對投影光學系統PL的失真 (distortion)程度（含倍率誤差）之評價。 在之後的步驟126之中，係由電腦主機27判定投影 光學系統PL有否異狀發生，亦即，由步驟125所評價之 解析度及失真程度與目標値相較，判定是否處在容許範圍 內，若有異狀發生時，則向操作者發出投影光學系統PL 的警示資訊。因此而由步驟127進行投影光學系統PL的 調整。此時，圖2之投影光學系統PL，所具備及使用之成 像特性調整機構（未圖示）可使既定的複數透鏡各自朝光 軸方向微動並可使之傾斜。此後，亦可重複實施步驟 120〜126的評價順序。關於成像特性調整機構，係揭示於 特開平6-45217號公報以及相對應之美國專利第6,078,380 號，在此將援用之而成爲本文所記載的一部份。又，本例 36 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 A7 _______B7_ __ 五、發明說明（W ) 之成像特性調整機構可控制曝光光源1的波長調整部，以 轉換由曝光光源1所發生之曝光光束IL的中心波長，亦可 藉由此波長之轉換作業來調整投影光學系統PL的成像特 性。 又，當投影光學系統PL的成像特性無異狀產生時， 動作由步驟126移轉至步驟128，而進行投影曝光裝置50 的最終之動態(dynamic)特性評價。因此，根據電腦主機27 的控制，藉圖1的光阻塗布機54將光阻塗布於未曝光的晶 圓（W4)之後，使該晶圓W4經過預烘烤裝置55及冷卻 裝置56而裝載於投影曝光裝置50的晶圓台39上（步驟 129)。其後，將圖7(b)所示之測試用標線片R1裝載於圖 2的標線片台31上（步驟130)。如圖7(b)所示般，在測 試用標線片R1的圖案區域，沿掃描方向SD(Y方向）以既 定間隔形成了 3對2維之評價用標記62A〜62C，62D〜62F 。對於評價用標記62A〜62F之形成，例如，可由與圖3(a) 的評價用標記36A相同的2個線寬與間隙相等圖案所形成 〇 在步驟131中，係藉圖2的投影曝光裝置50，以步進 重複方式（掃描曝光方式），透過投影光學系統PL將測 試用標線片R1的評價用標記62A〜62F的像曝光在晶圓W4 上之各照光區域SC。此時，圖7(b)之中，測試用標線片 R1沿著對向於照明區域35之掃描方向SD而進行掃描， 相應於此；如圖7(a)所示般，晶圓W4上之各照光區域係 對向於狹縫狀的曝光區域35P而被掃描。 37 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ^--------^---------. 527638 A7 ____B7 五、發明說明（彡r) 圖7(a)所示，係表示依上述所曝光的晶圓W4，在該 圖7(a)之中，晶圓W4的曝光面被區分爲N3個（N3<N2) 照光區域SC,，SC2,……SCN3(以下僅以「照光區域SC」稱 之，且每一個照光區域在X方向，Y方向以既定間距相隔 並與製造對象之元件約略爲同等大小，分別將評價用標記 62A〜62F的像62AP〜62FP曝光在各照光區域SC。在其後 的步驟132中，使曝光後的晶圓W4通過圖1的後段烘烤 裝置57及冷卻裝置58，搬送至顯像裝置59，在顯像裝置 59之中，將晶圓W4上的光阻予以顯像，使顯像後的晶圓 4透過搬送線52再度裝載於投影曝光裝置50的晶圓台39 上。此時，在圖7(a)之晶圓W4的各照光區域SC，形成了 各自對應於評價用標記62A〜62F的像之凹凸的光阻圖案（ 此亦作爲62AP〜62FP)。 在隨後的步驟133之中，係根據圖2的主控制系統22 的控制，採FIA式的對準感測器23，測量圖7(a)的晶圓 W4上的全部之照光區域SC的光阻圖案62AP〜62FP的線 寬及位置（X座標、Y座標），將測量値輸至電腦主機27 。電腦主機27，係求得所測量得的全部之照光區域SC內 的光阻圖案62AP〜62FP的線寬及位置之平均値及偏差（例 如標準偏差），藉由比較該測量値與設計値來評價投影曝 光裝置50的掃描曝光時之動態控制特性（標線片台與晶圓 台之同步特性等）。又，投影光學系統PL的失真等之成 像特性，亦同樣可藉此動態控制特性而檢測。 在之後的步驟134中，電腦主機27係檢查該動態控 38 本紙張尺度適用中國國家標準（CNs)a4規格（210 X 297公釐） --------------1 (請先閱讀背面之注意事項再填寫本頁) 訂· %- 527638 A7 -- —_ B7 __ 五、發明說明（$ ) 制特性有否異狀發生，若發生異狀者，向操作者發生動態 控制特性的警示資訊。因而調整步驟135之標線片台31、 晶圓台39,以及用來測量此等之位置的雷射干涉計等之台 (stage)系統。之後，亦可再實施步驟128〜134的評價順序 。又，當步驟134並無異常的動態控制特性時，乃移轉至 步驟136實施一般的元件圖案之曝光步驟。 又，藉上述的步驟126來檢驗投影光學系統PL的解 析度或成像特性等之場合，亦可不實施光阻的顯像處理， 而藉由對準感測器23來檢測在晶圓上的光阻所形成之評價 用標記36A〜36D的潛像，求得其線寬或位置的資訊，並根 據該檢測結果來求得解析度或成像特性。此時，因並未施 以顯像處理，故而，對於解析度或成像特性等之評價並未 受到該顯像處理的影響。因此，不經過步驟110等之求得 顯像不均的步驟，故可在短時間內進行對解析度等之評價 。又，在以步驟133評價動態控制特性時，同樣的可用該 潛像來代替評價用標記62A〜62F的光阻圖案。然而，在 進行以上所述之解析度或成像特性的評價，以及動態控制 特性的評價時，固然無利用到顯像不均特性之必要，但是 ，在對於塗布•顯像部51 (基板處理裝置）的一部份之顯 像裝置59進行評價時，則必需要該顯像不均的特性來評價 之，因而，須依實際所需另以他法事先檢測該顯像不均。 又，上述之實施形態中，雖係求得光阻的塗布不均及 顯像不均兩者，然而，如以上所述之檢測潛像的用例時， 亦可僅求得塗布不均，或是，當考慮到處理（分層)的塗布 39 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) Λ --------^ --------- %· 527638 B7 五、發明說明（) 不均之影響較小時亦可僅求得顯像不均。又，上述的實施 形態中雖然求得投影曝光裝置50的成像特性，然而，亦可 不求得該成像特性，而僅求得塗布不均與顯像不均之至少 其中一方。 如以上所揭示，本例的微影系統的評價順序，係藉可 動式遮簾14Β來作爲可變視野光圏，藉狹窄視野將評價用 標記48,49的像曝光於評價用的晶圓上，因此，易於區分 及評價投影曝光裝置50的特性、光阻塗布機54的特性、 或是顯像裝置59的特性。又，因係使用2種評價用標記 48，49，故而，易於區分及評價光阻塗布機54及顯像裝置 59的特性。因此，易於迅速的進行微影系統的調整。又， 若上述的實施形態中塗布不均或顯像不均超過容許範圍， 亦即，認定光阻塗布機54或顯像裝置59具有異狀時，乃 進行步驟109、111之光阻塗布機54或顯像裝置59的維修 作業（塗布條件或顯像條件的變更）。但是，即使藉由此 種維修仍可能使塗布不均或顯像不均未能進入容許範圍內 ’因此，例如，亦可藉由投影曝光裝置50來改變晶圓的曝 光條件（曝光量等），來對塗布不均或顯像不均所造成的 形成於晶圓上之電路圖案的線寬變化等達到補償效果。舉 例而言，因應塗布不均或顯像不均，使晶圓上的部份之曝 光量有所差異。藉而，即使塗布不均或顯像不均無法控制 在容許範圍內，仍可使得晶圓上形成的圖路圖案之線寬或 形狀等幾與設定資料一致。又，根據塗布不均或顯像不均 來變更上述的曝光條件時，亦可不實施上述的實施形態之 40 本紙張尺度適用中國國家標準(CNS)A4規格（21〇 χ 297公釐） --- (請先閱讀背面之注意事項再填寫本頁) n n n —fl ^ ^ 備 μμμ am· mm· > aw μ··· I 言 % 527638 A7 B7 - —------- 五、發明說明（W ) 中圖8的步驟109、II2。再者，即使塗布不均或顯像不均 係位在容許範圍內，仍可依實際需要變更上述的曝光條件 〇 又，在上述的實施形態中，例如，當認定光阻塗布機 54具有異狀時，亦可於實施光阻塗布機54的維修之後， 再度將光阻塗布於晶圓，並進行評價用標記的轉印，檢測 該轉印像來求得顯像不均，或者，亦可根據塗布不均來補 正步驟110之顯像不均的檢測結果。再者，當認定光阻塗 布機54與顯像裝置59的至少一方具有異狀時，亦同樣的 ，可根據塗布不均與顯像不均之至少其中一方來補正投影 曝光裝置50的成像特性之測量結果，或者，將其中的至少 一方的裝置予以維修之後，再度進行評價用標記之轉印。 又，在上述的實施形態中，欲檢測光阻塗布機54或顯 像裝置59的特性（塗布不均或顯像不均）而將評價用標記 的像投影於光阻時，係採取可動式遮簾14B將其視野控制 在狹窄視野內，因而藉晶圓上的曝光面上之細小間隔來評 價塗布不均或顯像不均。但是，當並無必要以如此細的間 隔來評價塗布不均或顯像不均時，相反的，亦可藉較廣的 視野將複數的評價用標記以一次的曝光動作轉印在各照光 區域區域。此時，例如，可藉由在各照光區域測量同位置 的評價用標記之像，來避免成像特性造成的影響。 又，在上述的實施形態中，欲進行投影曝光裝置50的 評價時，雖藉對準感測器23來測量既定的評價用標記的像 之光阻圖案，然而，亦可藉上述以外之方法，如日本專利 41 (請先閱讀背面之注意事項再填寫本頁) ^裝 %_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 A7 ________B7 _ 一 五、發明說明（β ) 第2530080號公報所揭示般，藉投影曝光裝置50形成既定 的導電體圖案，藉由測量此導電體圖案的電阻値’進行投 影曝光裝置50之成像特性等的校準(calibration)。 再者，圖2之對準感測器23、24，以及各種評價用標 記，並不侷限於上述實施形態之結構，可爲任意之結構。 又，欲對光阻塗布機54、投影曝光裝置50、以及顯像裝置 59之至少其中一項的特性進行評價，因而檢測評價用標記 的轉印像（光阻像或是潛像等）等，亦可使用組裝於微影 系統內的精確度(registration)測量裝置。 又，圖1之塗布•顯像部51與投影曝光裝置50雖爲 直列連接，然而，亦可將搬送裝置（例如AGV等）設在兩 裝置間使該微影系統成爲離線(off line)之結構。又，組裝 入塗布•顯像部51的裝置之種類或數量並不侷限於圖1之 結構，任意之結構皆宜。例如，使光阻塗布機54與顯像裝 置59構成爲一體的裝置亦可。或者，亦可不使用塗布•顯 像部51，而係以僅具有其中的〜部份，例如具有光阻塗布 機54，或顯像裝置59之基板處理裝置者。再者，爲使投 影曝光裝置50與塗布•顯像部5丨係分別由去的丰俨 制器_，來分別控制其動未 有圖1的電腦主機27，藉由兩者互相收送其動作狀況等訊 號，來控制晶圓的傳遞。@本例中，構成上述之微影系統 (換言之，即微影步驟中所使用者）的裝置之內，以投影 曝光裝置50以外的至少一項裝置爲基板處理裝置。 又，上述之貫施形態中，雖係使用掃描曝光方式之投 42 _____ ___ 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公爱) ------ (請先閱讀背面之注意事項再填寫本頁) 裝 訂-------- 527638 A7 ___B7_____ 五、發明說明（V) 影曝光裝置爲所採用之曝光裝置，然而，本發明亦適用於 步進重複方式（step and repeat)(即整批曝光方式）之投影 曝光裝置（步進機），以及，適用於不使用投影系統之近 接式(proximity)等之曝光裝置。此外，曝光光束並不侷限 於上述之紫外光，例如，亦可用雷射電漿光源或是同步加 速器放射線 SOR(Synchrotron Orbital Radiation)環所產生之 軟X線區域（波長5〜50nm)的EUV光。EUV曝光裝置之 結構中，其照明光學系統及投影系統係各自僅由複數的反 射光學元件所構成。又，亦可用硬X線、電子線、或離子 束等之帶電粒子線等，作爲曝光光源。 接著，由圖2的晶圓W來製造半導體元件。該半導體 元件之步驟，經由下述各步驟而製造:元件機能、性能的設 計步驟；根據該步驟而製造光罩的步驟；由矽材料製作晶 圓的步驟；將標線片圖案藉上述實施形態的投影曝光裝置 予以曝光的步驟；組裝元件的步驟（含切割步驟、打線步 驟、封裝步驟）；以及檢查步驟等。 又，微影系統的用途非僅侷限於製造半導體元件，例 如，亦可將微影系統的用途廣泛的運用在：形成於角型玻 璃板之液晶顯示元件，或是電漿顯示器等顯示器裝置，或 攝影元件(CCD等），微電腦機器、或是薄膜磁頭等之各種 元件。又，本發明之適用範圍，亦包含將形成有各種元件 的光罩圖案之光罩（光罩、標線片等）藉由微影步驟而予以 製造。運用於微影系統之各裝置及處理的詳細內容，例如 ，美國專利第4,900,939號所揭示之內容，在此援用該內 43 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱1 -- (請先閱讀背面之注意事項再填寫本頁) 聲 -----------------· 527638 A7 B7_ 五、發明說明（W ) 容作爲本文記載之一部份。 又，本發明並不侷限於上述實施形態，凡其結構範圍 未超出本發明之要旨者皆宜，此點係無庸贅言。 根據本發明，藉微影系統的實施可易於獨立評價光阻 的塗布步驟、曝光步驟以及光阻的顯像步驟。再者，亦極 有利於對構成微影系統的光阻塗布機、曝光裝置、以及顯 像裝置予以進行獨立評價。 再者，根據本發明，可輕易的因應實際所需，將微影 系統的一部份之基板處理裝置的特性等，與曝光裝置的特 性作獨立評價。 [元件符號說明] W1〜W4 晶圓 IL 曝光光束 R 標線片 PL 投影光學系統 IAX 光軸 SA^SAi..照光區域 SB^SB^…照光區域 1 曝光光源 2 光束匹配單元 3 可變減光器 4A、4B 透鏡系統 5 光束成形系統 6 第1複眼透鏡 44 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------^--------- %- 527638 A7 _B7_ 五、發明說明（α) 7Α 第1透鏡系統 7Β 第2透鏡系統 8 光程折射鏡 9 第2複眼透鏡 10 開口光圏板 l〇a圓形之開口光圏板 l〇b輪帶照明用之開口光圏板 10e驅動馬達 11 分束器 12、13 透鏡系統 14A 固定式遮簾 14B 可動式遮簾 15 光程折射鏡 16 成像用透鏡 17 副聚焦透鏡系統 18 主聚焦透鏡系統 19 聚光用透鏡 20 積分感測器 21 曝光控制元件 22 主控制系統 23 第1對準感測器 24 第2對準感測器 24a丄IA感測器 24b LSA感測器 (請先閱讀背面之注意事項再填寫本頁) Λ --------^--------- %, 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 A7 _B7_ 五、發明說明（0) 25A 投射光學系統 25B 受光光學系統 27 電腦主機 3 1 標線片台 32 標線片基座 33 評價標記板 34 驅動控制元件 35、35A 照明區域 35P 曝光區域 36A、36B.…36M 評價用標記 38 晶圓保持器 39 晶圓台 40 晶圓基座 41 驅動控制元件 42 第1導引構件 43 滑塊 44 第1支撐臂 45 收送支桿 46 第2導引構件 47 第2支撐臂 48、49 評價用標記 50 投影曝光裝置 51 塗布·顯像部 52 搬送線 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂--- %. 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 A7 B7 五、發明說明（袢） 53 第1晶圓匣 54 光阻塗布機 55 預烘烤裝置 56 冷卻裝置 57 後段烘烤裝置 58 冷卻裝置 59 顯像裝置 60 第2晶圓匣 61 繞射光柵狀之標記 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -I --------訂 I-------527638 A7 _ B7___ V. Description of the invention (Shan) SAl5SA2 ......... SAN1 (here, the "lighting area SA" is referred to as the whole), each (please read the precautions on the back before filling this page) Illumination area The conjugate images in the X and Y directions and the narrow illumination area 35A are approximately the same size; the images 48P and 49P of the marks 48 and 49 for evaluation are exposed to the respective illumination areas SA, respectively. In the subsequent step 106, the exposed wafer W1 is transferred to the developing device 59 through the post-stage baking device 57 and the cooling device 58 in FIG. 1. In the developing device 59, the wafer W1 on the wafer W1 is transferred. Photoresist is developed, and the developed wafer W1 is loaded on the wafer stage 39 of the projection exposure apparatus 50 through the transfer line 52 again. At this time, uneven photoresist patterns (also referred to as 48P, 49P) corresponding to the images 48P, 49P of the evaluation marks 48, 49 are formed in the respective illuminated areas SA of the wafer W1 in FIG. 4 (a). . The latter photoresist pattern 49P, as shown in Fig. 4 (b), is a diffraction grating-shaped mark arranged at a predetermined pitch in the X direction, and the former photoresist pattern 48P is as shown in Fig. 5 (a). Is a wedge-shaped plural concave-convex pattern. % · In the following step 107, the LIA sensor 24a of the alignment sensor 24 is operated according to the control of the main control system 22 of FIG. 2 to detect all of the wafers W1 on FIG. 4 (a). The detection signal corresponding to the intensity of the interference light (diffraction light) of the photoresist pattern 49 generated in the illumination area SA outputs the detection result to the computer main body 27. As shown in FIG. 4 (b), the two light beams LA, LB from the LIA sensor 24a are irradiated on the photoresist pattern 49P, the +1 diffraction light LA1 from the light beam LA of the photoresist pattern 49P, and the light beam LB The -1st-order diffraction light LB1 is structured in parallel to generate interference light, and the interference light is detected. At this time, because the average intensity of the interference light is 値, it varies according to the thickness of the photoresist film remaining in each illuminated area SA (that is, the step difference of the photoresist pattern 49P). This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 527638 A7 ______ Β7 _ 5. The description of the invention (4), so you can pre-experiment the relationship between the step of the photoresist pattern 49P and the average 値 of the detection signal of the interference light. Graphical, pre-stored in the file of the computer host 27. Next, the host computer 27 obtains the average value 値 of the detection signal of the interference light in each illumination area SA, and obtains the distribution of the thickness of the photoresist film remaining on the wafer W by using this graph. The film thickness distribution is used to estimate the average film thickness and film thickness dispersion (for example, standard deviation) when the photoresist is applied to the wafer W1 by the photoresist coater 54, and this is regarded as uneven coating. In the subsequent step 108, the host computer 27 determines whether the photoresist coating machine 54 is abnormal, that is, the average film thickness of the photoresist estimated in step 107, and the degree of deviation of the film thickness from that of the type. The target 値 (deviation of 0) of the photoresist is compared to determine whether it is within the allowable range. When there is an abnormality, a warning message of the photoresist coating machine 54 is sent to the operator. Therefore, the maintenance operation of the photoresist coating machine 54 in step 109 is started. After that, the evaluation sequence of steps 101 to 108 may be repeated and applied to other unexposed wafers W2. In addition, in the above-mentioned embodiment, in order to evaluate the photoresist coating machine 54, the photoresist pattern 49P after the development is detected. However, as shown in FIG. Each of the above illumination areas SA forms an uneven diffraction grating-shaped mark 61. After coating the photoresist PH on the wafer W1, the light beams LA and LB from the LIA sensor 24a are irradiated on the mark 61, and then the mark 61 is detected. Interference light (LAI, LB1) of the mark 615. At this time, the average 値 of the interference light intensity of the mark 61 changes with the film thickness of the photoresist PH in the illumination area SA. Therefore, the exposure of the LIA sensor 24a from the Detect the signal to obtain 31 on wafer W1 (please read the precautions on the back before filling in this page) Standard (CNS) A4 specification (210 x 297 public love ^ 527638 A7 ________B7____ V. Description of the invention (W) Film thickness distribution of photoresist PH. In this example, because the exposure step and development step are saved, it is OK The evaluation of the photoresist coating machine 54 is performed in a short time. In addition, the light beams LA and LB from the LIA sensor 24a should not be absorbed by the photoresist PH, that is, the wavelength of light does not occur to the photoresist PH. In addition, the latent image formed on the evaluation mark 49 of the photoresist can be used instead of the developed photoresist pattern 49P, and detected by the LIA sensor 24a, etc., and the light can be obtained based on the detection result. The average film thickness and film thickness deviation of the photoresist. At this time, the photoresist development step can be saved, so the photoresist coating machine can be performed in a short time. Evaluation of 4. The light beams LA and LB from the LIA sensor 24a should not be absorbed by the photoresist PH, that is, the wavelength of light does not have a photosensitivity effect on the photoresist PH. Similarly, the photoresist of FIG. The projection exposure device 50 has a film thickness measurement method of an interferometer method or an ellipsometry method, and directly measures the thickness distribution of the photoresist on the wafer by this film thickness measuring device before exposure. Alternatively, for example, interatomic Use a force microscope, etc. to detect the film thickness of the photoresist and its degree of variation. When the evaluation marks 48 and 49 are transferred to the photoresist to estimate the coating unevenness, the evaluation mark is used in the method of this example. Positions 48 and 49 are in the center of the projection field of view of the projection optical system PL (on the optical axis AX), and the effects of the aberrations of the projection optical system PL are considered to be substantially non-existent. However, when the image of the projection optical system PL cannot be ignored When it is poor, a measurement method that is not affected by the coating unevenness described above should be used. For example, the evaluation mark is projected on the image surface side of the projection optical system PL to detect the image, that is, the so-called aerial image measurement is used to obtain it first. Projection optical system PL Aberration information (spherical aberration, etc.), and use this aberration information to determine the above coating unevenness. 32 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). ^^ 1- -(Please read the precautions on the back before filling this page). 527638 A7 V. Description of the invention (P) ------------ Install --- (Please read the precautions on the back before (Fill in this page) In addition, the maintenance operation of the photoresist coating machine 54 in step 109 also includes resetting (changing) the photoresist coating conditions, etc. 丨 Spin coating includes wafer rotation. Speed or rotation number, etc .; Scan coat type includes wafer or nozzle moving speed. In addition, according to the film thickness or its deviation obtained in step 107, the operator can perform g-rounding of the photoresist coating machine 54 or the computer main body 27 issues an instruction to the photoresist coating machine 54 to perform Changes in the coating conditions and the like. % · Next, when the photoresist coating machine 54 has no abnormality, the action is transferred from step 108 to step 110. At this time, the main control system 22 of FIG. 2 uses the LSA sensing in the alignment sensor 24 The detector 24b obtains the detection signals corresponding to the diffracted light from the photoresist pattern 48P of the entire illumination area SA on the wafer W1 in FIG. 4 (a) in accordance with the X coordinate of the wafer table 39. As shown in the illumination area SAi of FIG. 5 (A), the laser beam LS from the LSA sensor 24b is irradiated in a slit shape extending in the Y direction, and the wafer stage 39 is driven in the X direction to make a photoresist pattern 48P is scanned relative to the laser beam LS. When the laser beam LS is irradiated on any part of the photoresist pattern 48P, diffracted light is generated from the photoresist pattern 48P. Here, the main control system 22 is to obtain the X-block mark range of the wafer table 39 when the number of detection signals of the diffracted light is greater than a predetermined value, so that the photoresist pattern 48P of the light-emitting area SAi in this range The length is LX1. Similarly, the main control system 22 obtains the length of the photoresist pattern 48P in all the illuminated areas SA, and enters the measurement 値 into the host computer 27. At this time, for example, if it is the imaging state of the illuminated area SAj in FIG. 5 (b) When it is not good, because the length of the photoresist pattern 48P LX2 is also less than LX1, 33 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 527638 A7 _________B7__ 5. Description of the invention (; 丨) The length of the photoresist pattern 48 is made to correspond to a developing state. Based on this, the computer host 27 considers the average length of the photoresist pattern 48P of all the illuminated areas SA on the wafer W1 and the degree of deviation (such as standard deviation) as the photoresist display of the display device 59. The development of the image is uneven. In the following step 111, the computer host 27 will check whether the developing device 59 is out of shape, that is, the development unevenness (average of the length of the photoresist pattern 48P and deviation) obtained in step uo. ), Compared with the target 値 (the degree of deviation is 0) regulated by this type of photoresist, to determine whether it is within the allowable range, and if an abnormality occurs, the operator will be warned by the display device 59. Accordingly, the maintenance operation of the developing device 59 in step 112 is performed. In step 112, the operator, the host computer 27, or the like changes the development conditions (for example, the development time) of the development device 59 in accordance with the development unevenness. After that, the evaluation procedures of steps 101 to 106, 110, and 111 may be performed again. Next, if no abnormality occurs in the developing device 59, the operation is shifted from step 111 to step 120 in FIG. 9 to evaluate the imaging characteristics of the projection exposure device 50. Therefore, according to the control of the host computer 27, the photoresist is applied to the unexposed wafer (W3) by the photoresist coating machine 54 in FIG. It is mounted on the wafer stage 39 of the projection exposure apparatus 50 (step 121). Thereafter, the center of the evaluation mark plate 33 shown in FIG. 2 faces the optical axis AX, the opening of the movable shade 14B is opened, and the illumination area of the exposure light beam IL is set to the illumination area of a general size shown in FIG. 3 (a). 35 (step 122). In this state, the evaluation marks 36A to 36D around the effective field of view of the projection optical system PL can be illuminated. 34 (Please read the precautions on the reverse side before filling out this page). The size of this paper applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) 527638 A7 ____B7____ 5. Description of the invention (P) In step 123 The projection exposure device 50 in FIG. 2 is regarded as a batch exposure type projection exposure device, and the images of the evaluation marks 36A to 36D in the illumination area 35 are exposed to the wafer W3 through the projection optical system PL in a step-and-repeat manner. The above each illuminated area SB. Fig. 6 (a) shows the wafer W3 exposed through the disclosed method. In Fig. 6 (a), the exposed surface of the wafer W3 has N2 (N2 < N1) light-emitting areas SB. SB2 ... SBN2 (herein, the "illumination area SB" is referred to as the entirety). The conjugate images of each illumination area in the X direction, the Y direction, and the elongated illumination area 35 are approximately the same size, and the evaluation marks 36A are respectively set. The 36 to 36D images 36AP to 36DP are exposed in each illuminated area SB. In the following step 124, the exposed wafer W3 is transferred to the developing device 59 through the post-stage baking device 57 and the cooling device 58 in FIG. 1. In the developing device 59, the photoresist on the wafer 3 is transferred. Development is performed, and the developed wafer W3 passes through the transfer line 52 and is loaded on the wafer stage 39 of the projection exposure apparatus 50 again. At this time, a concave-convex photoresist pattern (also 36AP to 36DP) corresponding to the image of the evaluation marks 36A to 36D is formed in each illuminated area SB of the wafer W3 in FIG. 6 (a). The most typical photoresist pattern 36AP, as shown in Fig. 6 (b), is composed of patterns 37XP, 37YP of uneven line width and gaps arranged in the X direction and the Y direction, respectively. In the subsequent step 125, the photoresist of the entire illumination area SB on the wafer W3 of FIG. 6 (a) is measured using the FIA-type alignment sensor 23 according to the control of the main control system 22 of FIG. 2. The line width and position (X-coordinate, Y-coordinate) of the patterns 36AP ~ 36DP are input to the computer host 27. For example, the photoresist pattern 36AP in Figure 6 (b) is a measurement of the line width and the gap 35 __________ ____ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back first Fill out this page again) Order ---------% 527638 A7 ___B7___ 5. Description of the invention (〇) --- (Please read the precautions on the back before filling out this page) and other convex parts of the patterns 37XP, 37PP (Photoresistance) width hX, hY. At this time, because the photoresist coating machine 54 and the developing device 59 have been adjusted to have good characteristics in this embodiment, the line width and position of the photoresist patterns 36AP to 36DP depend on the imaging characteristics of the projection optical system PL. (Resolution, aberration, etc.). However, because the photoresist coating machine 54 and the developing device 59 尙 have some degree of uneven coating and development unevenness, the computer main body 27 uses the measured photoresist patterns 36AP in all the illuminated areas SB ~ The line width and position of 36DP are averaged to obtain the line width and position of the photoresist patterns 36AP to 36DP on the image plane of the projection optical system PL. In addition, the computer main body 27 evaluates the resolution of the projection optical system PL by comparing the line width with the design frame, and compares the positions of the four photoresist patterns 36AP to 36DP with the design frame. To evaluate the distortion (including magnification error) of the projection optical system PL. In the following step 126, the computer host 27 determines whether the projection optical system PL is abnormal, that is, the resolution and the distortion degree evaluated in step 125 are compared with the target value, and it is determined whether it is within the allowable range. If any abnormality occurs, the warning information of the projection optical system PL is issued to the operator. Therefore, the adjustment of the projection optical system PL is performed in step 127. At this time, the imaging characteristic adjustment mechanism (not shown) provided and used in the projection optical system PL of FIG. 2 can make a predetermined plurality of lenses slightly move toward the optical axis and tilt them. After that, the evaluation sequence of steps 120 to 126 may be repeated. Regarding the imaging characteristic adjustment mechanism, it is disclosed in Japanese Patent Application Laid-Open No. 6-45217 and the corresponding U.S. Patent No. 6,078,380, which will be referred to as a part of this document. In addition, this example 36 applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 527638 A7 _______B7_ __ 5. The imaging characteristic adjustment mechanism of the invention description (W) can control the wavelength adjustment section of the exposure light source 1, The central wavelength of the exposure light beam IL generated by the exposure light source 1 can be converted, and the imaging characteristics of the projection optical system PL can also be adjusted by this wavelength conversion operation. When there is no abnormality in the imaging characteristics of the projection optical system PL, the operation is shifted from step 126 to step 128, and the final dynamic characteristic evaluation of the projection exposure device 50 is performed. Therefore, according to the control of the host computer 27, after the photoresist is coated on the unexposed wafer (W4) by the photoresist coating machine 54 of FIG. 1, the wafer W4 is loaded through the pre-baking device 55 and the cooling device 56. On the wafer stage 39 of the projection exposure apparatus 50 (step 129). Thereafter, the test reticle R1 shown in Fig. 7 (b) is mounted on the reticle table 31 of Fig. 2 (step 130). As shown in Fig. 7 (b), three pairs of two-dimensional evaluation marks 62A to 62C, 62D to 62F are formed at predetermined intervals along the scanning direction SD (Y direction) in the pattern area of the test reticle R1. For the formation of the evaluation marks 62A to 62F, for example, it can be formed by two patterns having the same line width and gap as the evaluation mark 36A of FIG. 3 (a). In step 131, the projection exposure device of FIG. 2 is used. 50. In a step-and-repeat method (scanning exposure method), the images of the evaluation marks 62A to 62F of the test reticle R1 are exposed to the respective illumination areas SC on the wafer W4 through the projection optical system PL. At this time, in FIG. 7 (b), the test reticle R1 is scanned along the scanning direction SD opposite to the illumination area 35, corresponding to this; as shown in FIG. 7 (a), the wafer W4 Each of the above illumination areas is scanned toward the slit-shaped exposure area 35P. 37 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) ^ -------- ^ ------- -. 527638 A7 ____B7 V. Description of the invention (彡 r) Figure 7 (a) shows the wafer W4 exposed as described above. In Figure 7 (a), the exposed surface of wafer W4 is It is divided into N3 (N3 < N2) illumination areas SC ,, SC2, ... SCN3 (hereinafter referred to as "illumination area SC" only), and each illumination area is in the X direction and the Y direction at a predetermined interval and separated from the manufacturing object. The elements are approximately the same size, and the images 62AP to 62FP of the evaluation marks 62A to 62F are exposed to the respective illuminated areas SC. In the subsequent step 132, the exposed wafer W4 is passed through the post-baking apparatus of FIG. 1 57 and cooling device 58 are transferred to developing device 59. In developing device 59, the photoresist on wafer W4 is developed, and the developed wafer 4 is re-loaded into the projection exposure through the transfer line 52. On the wafer stage 39 of the apparatus 50. At this time, in each illuminated area SC of the wafer W4 in FIG. 7 (a), images corresponding to the evaluation marks 62A to 62F are formed. Concave and convex photoresist pattern (this is also referred to as 62AP ~ 62FP). In the following step 133, the FIA-type alignment sensor 23 is used to control the main control system 22 of FIG. 2 to measure FIG. 7 (a The line width and position (X-coordinate, Y-coordinate) of the photoresist patterns 62AP ~ 62FP of all the illuminated areas SC on the wafer W4 are input to the computer host 27. The computer host 27 obtains the measured The average width and deviation (for example, standard deviation) of the line width and position of the photoresist patterns 62AP to 62FP in all the illuminated areas SC are obtained, and the scanning exposure of the projection exposure device 50 is evaluated by comparing the measurement width and the design width The dynamic control characteristics (synchronization characteristics of the reticle stage and wafer stage, etc.), and the imaging characteristics of the projection optical system PL can also be detected by the dynamic control characteristics. In the subsequent step 134, The computer host 27 checks the dynamic control 38 The paper size is applicable to the Chinese National Standard (CNs) a4 specification (210 X 297 mm) -------------- 1 (Please read the note on the back first Please fill in this page for more details) Order ·%-527638 A7-—_ B7 __ V. Invention Explain ($) whether the abnormality occurs in the control characteristics. If the abnormality occurs, the operator will be warned about the dynamic control characteristics. Therefore, the reticle stage 31 and wafer stage 39 in step 135 are adjusted, and used to measure this. Laser interferometer and other stage systems at the same position. After that, the evaluation order of steps 128 to 134 can also be implemented. When step 134 does not have abnormal dynamic control characteristics, it moves to step 136. The exposure step of a general element pattern is performed. In addition, when the resolution and imaging characteristics of the projection optical system PL are checked by the above-mentioned step 126, the development of the photoresist may not be performed, and the light on the wafer may be detected by the alignment sensor 23. The latent images of the evaluation marks 36A to 36D formed by the resistance are obtained, and the line width or position information is obtained, and the resolution or imaging characteristics are obtained based on the detection results. At this time, since no development processing is performed, the evaluation of the resolution and imaging characteristics is not affected by the development processing. Therefore, without performing the steps of obtaining the development unevenness in step 110 and the like, the evaluation of the resolution and the like can be performed in a short time. When evaluating the dynamic control characteristics in step 133, the latent image may be used instead of the photoresist patterns of the evaluation marks 62A to 62F. However, in the above-mentioned evaluation of the resolution or imaging characteristics and the evaluation of the dynamic control characteristics, although it is not necessary to use the development unevenness characteristics, the coating / developing section 51 (substrate processing apparatus) When performing evaluation on a part of the developing device 59, it is necessary to evaluate the characteristics of the development unevenness. Therefore, it is necessary to detect the development unevenness by other methods according to actual needs. Moreover, in the above-mentioned embodiment, although both uneven application and development unevenness of the photoresist are obtained, in the above-mentioned use case for detecting a latent image, only uneven application may be obtained, or Yes, when considering the processing (layered) coating 39 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) Λ ---- ---- ^ ---------% · 527638 B7 V. Description of the invention () When the effect of unevenness is small, only the unevenness of development can be obtained. Although the imaging characteristics of the projection exposure device 50 are obtained in the above-mentioned embodiment, the imaging characteristics may not be obtained, and at least one of the unevenness in coating and the unevenness in development may be obtained. As disclosed above, the evaluation order of the lithography system of this example is that the movable blind 14B is used as the variable field of view light, and the image of the evaluation marks 48, 49 is exposed on the evaluation wafer by the narrow field of view. Therefore, it is easy to distinguish and evaluate the characteristics of the projection exposure device 50, the characteristics of the photoresist coater 54, or the characteristics of the developing device 59. In addition, since two types of evaluation marks 48 and 49 are used, it is easy to distinguish and evaluate the characteristics of the photoresist coating machine 54 and the developing device 59. Therefore, it is easy to quickly adjust the lithography system. In addition, if the coating unevenness or the development unevenness exceeds the allowable range in the above-mentioned embodiment, that is, when it is determined that the photoresist coating machine 54 or the developing device 59 has an abnormal shape, the photoresist coating machine of steps 109 and 111 is performed. Maintenance work of 54 or developing device 59 (change of coating conditions or developing conditions). However, even with such maintenance, uneven coating or development unevenness may not be allowed to fall within the allowable range. Therefore, for example, the exposure conditions (exposure amount, etc.) of the wafer may be changed by the projection exposure device 50. In order to achieve the compensation effect, the variation of the line width of the circuit pattern formed on the wafer caused by the uneven coating or development unevenness. For example, due to uneven coating or uneven development, the amount of exposure on the wafer varies. Therefore, even if coating unevenness or development unevenness cannot be controlled within the allowable range, the line width or shape of the pattern of the pattern formed on the wafer can be made to be consistent with the setting data. In addition, when the above-mentioned exposure conditions are changed based on uneven coating or uneven development, the above-mentioned embodiment of the paper size of 40 may not be implemented. The Chinese paper standard (CNS) A4 specification (21〇χ 297 mm) is applicable. -(Please read the precautions on the back before filling this page) nnn —fl ^ ^ Prepare μμμ am · mm · &w; aw μ ··· I ％% 527638 A7 B7-—------- V. Invention Steps 109 and II2 in FIG. 8 are described in (W). Furthermore, even if the uneven coating or development unevenness is within the allowable range, the above-mentioned exposure conditions can still be changed according to actual needs. In the above-mentioned embodiment, for example, when it is determined that the photoresist coating machine 54 has a difference In this case, after the photoresist coating machine 54 is repaired, the photoresist may be coated on the wafer again, and the evaluation mark may be transferred, and the transferred image may be detected to obtain development unevenness. The detection result of the development unevenness in step 110 may be corrected based on the application unevenness. Furthermore, when it is determined that at least one of the photoresist coating machine 54 and the developing device 59 has a different shape, the imaging characteristics of the projection exposure device 50 can be corrected based on at least one of coating unevenness and development unevenness. As a result of the measurement, or after at least one of the devices is repaired, the evaluation mark is transferred again. Moreover, in the above-mentioned embodiment, when the characteristics (uneven coating or uneven development) of the photoresist coater 54 or the developing device 59 are to be detected, and an image of a mark for evaluation is projected on the photoresist, a movable type is adopted. The blind 14B controls its field of view within a narrow field of view, and therefore evaluates the uneven coating or development unevenness based on the fine interval on the exposed surface of the wafer. However, when it is not necessary to evaluate coating unevenness or development unevenness at such fine intervals, on the contrary, a plurality of evaluation marks can be transferred to each illuminated area in a single exposure operation with a wide field of view. region. In this case, for example, the effects of imaging characteristics can be avoided by measuring the images of the evaluation marks at the same position in each illuminated area. Furthermore, in the above-mentioned embodiment, when the evaluation of the projection exposure device 50 is to be performed, the photoresist pattern of a predetermined evaluation mark image is measured by the alignment sensor 23, however, it is also possible to use other methods than the above. For example, Japanese Patent 41 (Please read the precautions on the back before filling this page) ^ Packing% _ This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 527638 A7 ________B7 _15. Description of the invention (Β) As disclosed in Japanese Patent No. 2530080, a predetermined conductive pattern is formed by the projection exposure device 50, and the imaging characteristics and the like of the projection exposure device 50 are calibrated by measuring the resistance 値 ′ of the conductive pattern. In addition, the alignment sensors 23 and 24 in FIG. 2 and various evaluation marks are not limited to the structure of the above embodiment, and may be any structure. In order to evaluate the characteristics of at least one of the photoresist coater 54, the projection exposure device 50, and the developing device 59, a transfer image (a photoresist image or a latent image) of the mark for evaluation is detected, etc. It is also possible to use a precision measurement device assembled in the lithography system. In addition, although the coating / developing unit 51 and the projection exposure device 50 in FIG. 1 are connected in series, a conveying device (such as an AGV) may be installed between the two devices to make the lithography system off-line. structure. The type or number of devices incorporated in the coating / developing unit 51 is not limited to the structure shown in Fig. 1, and any structure is suitable. For example, a device in which the photoresist coater 54 and the developing device 59 are integrated may be used. Alternatively, instead of using the coating / developing section 51, only a part of them, for example, those having a photoresist coating machine 54 or a substrate processing device for a developing device 59 may be used. In addition, in order for the projection exposure device 50 and the coating and developing section 5 to be separately controlled by the abundance controller _, the computer main body 27 shown in FIG. 1 is controlled separately, and the two are sent to and received from each other. Signals such as operating conditions to control wafer transfer. @In this example, among the devices constituting the above-mentioned lithography system (in other words, the user used in the lithography step), at least one device other than the projection exposure device 50 is a substrate processing device. In addition, in the above-mentioned conventional form, although the scanning exposure method is used, 42 _____ ___ This paper size applies the Chinese National Standard (CNS) A4 specification (21〇X 297 public love) ------ (Please read first Note on the back, please fill in this page again) Binding -------- 527638 A7 ___B7_____ 5. Description of the Invention (V) The film exposure device is the exposure device used, however, the present invention is also applicable to the step and repeat method ( step and repeat) (that is, batch exposure method) projection exposure device (stepper), and exposure devices suitable for proximity and the like that do not use a projection system. In addition, the exposure beam is not limited to the above-mentioned ultraviolet light. For example, a soft plasma X-ray region (wavelength 5 to 50 nm) EUV light generated by a laser plasma light source or a synchrotron radiation SOR (Synchrotron Orbital Radiation) ring can also be used. In the structure of the EUV exposure device, the illumination optical system and the projection system are each composed of only a plurality of reflective optical elements. Alternatively, hard X-rays, electron beams, or charged particle beams such as ion beams can be used as the exposure light source. Next, a semiconductor element is manufactured from the wafer W of FIG. 2. The step of manufacturing the semiconductor device is performed through the following steps: a step of designing the function and performance of the device; a step of manufacturing a photomask according to the step; a step of manufacturing a wafer from a silicon material; The step of exposing the projection exposure device of the device; the step of assembling the components (including the cutting step, the wire bonding step, the packaging step); and the inspection step. In addition, the application of the lithography system is not limited to the manufacture of semiconductor elements. For example, the application of the lithography system can also be widely used in liquid crystal display elements formed on angular glass plates or display devices such as plasma displays. Or imaging elements (CCD, etc.), microcomputers, or thin-film magnetic heads. In addition, the scope of application of the present invention also includes manufacturing a photomask (mask, reticle, etc.) in which a photomask pattern of various elements is formed by a lithography process. Details of the various devices and processes used in the lithography system, for example, as disclosed in US Patent No. 4,900,939, which is referred to in this 43 paper standards are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297) 1-(Please read the precautions on the back before filling this page) Voice ----------------- · 527638 A7 B7_ V. The description of the invention (W) is included in this document In addition, the present invention is not limited to the above-mentioned embodiments, and any structure whose scope does not exceed the gist of the present invention is needless to say. According to the present invention, the implementation of the lithography system can be easily and independently evaluated. Photoresist coating step, exposure step, and photoresist development step. Furthermore, it is also very useful for independent evaluation of the photoresist coater, exposure device, and development device that constitute the lithographic system. Furthermore, according to According to the present invention, the characteristics of the substrate processing apparatus of a part of the lithography system can be easily evaluated independently of the characteristics of the exposure apparatus according to actual needs. [Element Symbol Explanation] W1 ~ W4 Wafer IL Exposure Beam R Reticle PL cast Optical system IAX Optical axis SA ^ SAi .. Illuminated area SB ^ SB ^ ... Illuminated area 1 Exposure light source 2 Beam matching unit 3 Variable subtractor 4A, 4B Lens system 5 Beam shaping system 6 First fly-eye lens 44 Paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) -------- ^ ---------%-527638 A7 _B7_ V. Description of the invention (α) 7Α 1st lens system 7B 2nd lens system 8 optical path refraction lens 9 2nd fly-eye lens 10 aperture light plate 10a circular aperture light plate 10b wheel belt illumination Opening plate 10e drive motor 11 Beam splitter 12, 13 Lens system 14A Fixed shade 14B Moveable shade 15 Optical path refraction lens 16 Imaging lens 17 Sub-focus lens system 18 Main focus lens system 19 Condensing Lens 20 Integral sensor 21 Exposure control element 22 Main control system 23 First alignment sensor 24 Second alignment sensor 24a IA sensor 24b LSA sensor (Please read the precautions on the back first (Fill in this page again) Λ -------- ^ ---------%, this paper size applies Chinese National Standard (C NS) A4 specification (210 X 297 mm) 527638 A7 _B7_ V. Description of the invention (0) 25A projection optical system 25B light receiving optical system 27 computer host 3 1 reticle table 32 reticle base 33 evaluation mark plate 34 drive Control elements 35, 35A Illumination area 35P Exposure areas 36A, 36B ... 36M Evaluation marks 38 Wafer holder 39 Wafer stage 40 Wafer base 41 Drive control element 42 First guide member 43 Slider 44 First support Arm 45 Delivery support rod 46 Second guide member 47 Second support arm 48, 49 Evaluation mark 50 Projection exposure device 51 Coating and developing section 52 Transfer line (Please read the precautions on the back before filling this page) -------- Order ---%. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 527638 A7 B7 V. Description of the invention (袢) 53 The first wafer box 54 Photoresist coating machine 55 Pre-baking device 56 Cooling device 57 Back-end baking device 58 Cooling device 59 Developing device 60 Second wafer box 61 Diffraction grating mark This paper size applies the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) (Please read the notes on the back first Then fill out this page) -I -------- book I -------

Claims (1)

527638 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 t、申請專利範圍 1. 一種微影系統之評價方法，包含有：感光材料的塗 布步驟、曝光步驟、以及顯像步驟，以將既定的顯像圖案 形成在塗布有感光材料的基板；並且包含： 使塗布有感光材料的基板透過評價用圖案來進行曝光 使已曝光的基板顯像而形成顯像圖案； 觀測所形成的顯像圖案； 根據該觀測結果，將分別對顯像圖案造成影響的前述 塗布步驟所特有的塗布因子、前述曝光步驟所特有的曝光 因子、以及前述顯像步驟所特有的顯像因子中至少一因子 ，與其他因子獨立求得。 2. 如申請專利範圍第1項之微影系統之評價方法，其 中·· 爲使前述塗布因子及顯像因子分別與曝光因子獨立求 得，在透過評價用圖案對基板曝光時，將照明於評價用圖 案的區域予以限制。 3. 如申請專利範圍第2項之微影系統之評價方法，其 中： 前述評價用圖案，含有可分別求得塗布因子、顯像因 子、以及曝光因子的圖案，爲使前述一個因子能與其他因 子獨立求得，乃對爲求得該一個因子之圖案的顯像圖案予 以觀測。 4. 如申請專利範圍第1項之微影系統之評價方法，其 中·· (請先閱讀背面之注意事項再填寫本頁) • ϋ n n n u n n ,t 、« n urn n ϋ ·ϋ ϋ n I 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 塗布因子、顯像因子、及曝光因子係獨立求得。 5. 如申請專利範圍第1項之微影系統之評價方法，其 中： 從顯像圖案求得塗布因子後，再求得顯像因子。 6. 如申請專利範圍第1項之微影系統之評價方法，其 中： 塗布因子係指塗布不均，顯像因子係指顯像不均。 7. —種微影系統之評價方法，具有：塗布裝置，將感 光材料塗布於基板；曝光裝置，將已塗有感光材料的基板 予以曝光；以及顯像裝置，將感光材料予以顯像；其係含 有以下步驟： 第1步驟，藉前述塗布裝置將感光材料塗布於基板上 第2步驟，藉前述曝光裝置，將塗布有前述感光材料 的基板透過評價用圖案來進行曝光塗布有； 第3步驟’藉則述顯像裝置將則述基板的前述感光材 料予以顯像； 第4步驟，測量前述顯像後之基板上的前述感光材料 的顯像圖案；及 第5步驟，根據第4步驟的測量結果，使得分別對顯 像圖案造成影響的前述塗布裝置的特性、前述曝光裝置的 特性、以及前述顯像裝置的特性中之一特性與其他特性獨 立評價。· 8·如申請專利範圍第7項之微影系統之評價方法，其 2 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) -------訂--------I 527638 A8 B8 C8 D8 、申請專利範圍 中： 前述曝光裝置具備將光罩圖案之像投影在基板上之投 影系統； 前述第2步驟之中，使前述評價用圖案之像透過前述 投影系統之有效視野內的既定之狹窄區域，投影在前述基 板上的複數分隔區域； 前述第5步驟之中，對前述塗布裝置的特性或前述顯 像裝置的特性予以評價。 9. 如申請專利範圍第8項之微影系統之評價方法，其 中： 前述第4步驟之中，測量形成在前述基板上的複數分 隔區域的前述感光材料的顯像圖案之厚度分布所對應的物 理量； 前述第5步驟之中，對於前述塗布裝置所造成之前述 感光材料的塗布不均予以評價。 10. 如申請專利範圍第9項之微影系統之評價方法，其 中： 前述評價用圖案，係排列在沿與測量方向交叉的方向 之複數個楔形圖案， 前述第4步驟之中，測量形成在前述基板上的複數分 隔區域之前述感光材料的顯像圖案在前述測量方向的長度 偏差； 前述第5步驟之中，對於前述顯像裝置的顯像不均予 以評價。 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 527638 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 、申請專利範圍 π.如申請專利範圍第7項之微影系統之評價方法，其 中： 前述曝光裝置具備將光罩圖案之像投影在基板上的投 影系統； 前述第2步驟之中，係使評價用圖案之像，透過前述 投影系統之有效視野內的既定之較廣區域，投影在前述基 板上的複數分隔區域； 前述第5步驟之中，係對前述曝光裝置的前述投影系 統的特性予以評價。 12. 如申請專利範圍第8項之微影系統之評價方法，其 中： 前述曝光裝置，係使光罩與基板作同步移動來對前述 基板進行曝光之掃描曝光型曝光裝置； 前述第2步驟之中，係使前述評價用圖案的像以掃描 曝光方式，投影在前述基板上之複數分隔區域； 前述第5步驟之中，係對前述曝光裝置的動態控制特 性予以評價。 13. 如申請專利範圍第9項之微影系統之評價方法，其 中： 前述物理量，係藉由曝光裝置所具備的第1感測器來 測量。 14. 如申請專利範圍第10項之微影系統之評價方法， 其中：— 係藉由曝光裝置所具備之第2感測器，來測量前述顯 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ·裝--------訂------I I (請先閱讀背面之注意事項再填寫本頁) 527638 A8 B8 C8 D8 f、申請專利範圍 像圖案在前述測量方向之長度偏差。 15. 如申請專利範圍第9項之微影系統之評價方法，其 係進一部包含： 第6步驟，針對形成在前述基板上的複數分隔區域之 前述感光材料的顯像圖案’測量其在前述測量方向之長度 偏差;及 第7步驟，對前述顯像裝置的顯像不均予以評價。 16. 如申請專利範圍第15項之微影系統之評價方法’ 其係進一部包含： 第8步驟，係藉前述塗布裝置將感光材料塗布於其他 基板上； 第9步驟，係將異於前述評價用圖案的圖案之像，透 過前述投影系統之有效視野內的既定之較廣區域’來投影 於前述基板上的複數分隔區域，而將塗布有前述感光材料 的基板之感光材料曝光； 第10步驟，係將第9步驟所曝光的感光材料予以顯像 ;及 第11步驟，係測量以第10步驟所顯像之感光材料的 顯像圖案，來對前述曝光裝置的前述投影系統之任一項特 性進行評價。 17·如申請專利範圍第16項之微影系統之評價方法， 其係進一部包含： 根據所評價之前述投影系統的特性，來調整前述投影 系統。 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------^--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 527638 A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 18·如申請專利範圍第17項之微影系統之評價方法， 其中前述曝光裝置係使光罩與基板作同步移動來進行對前 述基板的曝光之掃描曝光型的曝光裝置，並且進一步包含 第I2步驟，係藉塗布裝置將感光材料塗布於測試用基 板； 第13步驟，係將評價用光罩之像藉掃插曝光方式投影 在前述基板上之複數分隔區域，來曝光感光材料； 第14步驟，係將以第13步驟所曝光之感光材料予以 顯像； 第15步驟，係在觀測評價曝光裝置的動態控制特性後 予以評價。 19. 一種微影系統之評價方法，具有：曝光裝置，將塗 布有感光材料的基板予以曝光;及基板處理裝置，係在前述 感光材料之曝光前與曝光後至少一方’對前述基板進行處 理；並且包含： 藉微影系統將評價用圖案轉印至感光材料而形成轉印 像； 測量轉印像的狀態； 根據該測量結果，來獨立評價前述曝光裝置的特性與 前述基板處理裝置的特性。 20. 如申請專利範圍第19項之微影系統之評價方法， 其中：_ 爲了獨立求得前述曝光裝置的特性及基板處理裝置的 6 本紙張尺度適用中國國家標準（CNS)A4規格（21〇x 297公釐） ----------------- (請先閱讀背面之注意事項再填寫本頁)527638 Printed by A8, B8, C8, D8, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, Patent Application 1. An evaluation method of lithography system, including: coating steps, exposure steps, and development steps for photosensitive materials A developing pattern formed on the substrate coated with a photosensitive material; and comprising: exposing the substrate coated with the photosensitive material through an evaluation pattern to expose the exposed substrate to form a developing pattern; observing the developed developing pattern ; According to the observation result, at least one of a coating factor unique to the aforementioned coating step, an exposure factor unique to the aforementioned exposure step, and a development factor unique to the aforementioned developing step, which respectively affect the developing pattern, and The other factors are obtained independently. 2. As for the evaluation method of the lithography system in the first item of the patent application scope, in order to obtain the aforementioned coating factors and imaging factors independently from the exposure factors, when the substrate is exposed through the evaluation pattern, the lighting is The area of the evaluation pattern is limited. 3. For example, the evaluation method of the lithography system in the second item of the patent application, wherein: the aforementioned evaluation pattern includes a pattern in which a coating factor, a development factor, and an exposure factor can be obtained separately. The factor is obtained independently, and the development pattern for obtaining the pattern of the one factor is observed. 4. As for the evaluation method of the lithography system in the scope of the patent application, item 1, of which ... (Please read the precautions on the back before filling out this page) • ϋ nnnunn, t, «n urn n ϋ · ϋ ϋ n I Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 527638 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 VI. Patent scope Coating factor, imaging factor, and exposure factor are independent Find it. 5. For the evaluation method of the lithography system according to item 1 of the patent application scope, wherein: After obtaining the coating factor from the development pattern, the development factor is obtained. 6. If the evaluation method of the lithography system in item 1 of the patent application scope is as follows, wherein: the coating factor refers to uneven coating, and the development factor refers to uneven development. 7. An evaluation method of a lithography system, comprising: a coating device that applies a photosensitive material to a substrate; an exposure device that exposes a substrate that has been coated with a photosensitive material; and a developing device that develops a photosensitive material; The system includes the following steps: a first step of applying a photosensitive material on a substrate by the coating device; a second step of exposing and coating the substrate coated with the photosensitive material with an evaluation pattern through the exposure device; a third step; 'Through the developing device, the aforementioned photosensitive material of the substrate is developed; in a fourth step, a developing pattern of the aforementioned photosensitive material on the substrate after the aforementioned development is measured; and in a fifth step, according to the fourth step, As a result of the measurement, one of the characteristics of the coating device, the characteristics of the exposure device, and the characteristics of the development device that individually affect the development pattern is independently evaluated from the other characteristics. · 8 · If the evaluation method of the lithography system in the 7th scope of the patent application, the 2 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm) (Please read the precautions on the back before filling (This page) ------- Order -------- I 527638 A8 B8 C8 D8, in the scope of patent application: The aforementioned exposure device is provided with a projection system that projects the image of the mask pattern on the substrate; In the second step, the image of the evaluation pattern is transmitted through a predetermined narrow area within an effective field of view of the projection system, and is projected onto a plurality of divided areas on the substrate. In the fifth step, the characteristics of the coating device are projected. Or the characteristics of the aforementioned developing device are evaluated. 9. The evaluation method of the lithography system according to item 8 of the scope of patent application, wherein: in the aforementioned fourth step, the thickness distribution corresponding to the development pattern of the photosensitive material of the plurality of separated regions formed on the substrate is measured. Physical quantity; In the fifth step, the uneven coating of the photosensitive material by the coating device was evaluated. 10. The evaluation method of the lithography system according to item 9 of the scope of patent application, wherein: the aforementioned evaluation pattern is a plurality of wedge-shaped patterns arranged in a direction intersecting with the measurement direction. In the aforementioned fourth step, the measurement is formed in The length deviation of the development pattern of the photosensitive material in the plurality of divided regions on the substrate in the measurement direction; and in the fifth step, the development unevenness of the development device is evaluated. 3 This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm). -------- Order --------- line (please read the notes on the back before filling (This page) Printed by the Employees 'Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 527638 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 and the scope of patent application. : The exposure device is provided with a projection system that projects an image of a mask pattern on a substrate; in the second step, the image of the evaluation pattern is projected through a predetermined wide area within an effective field of view of the projection system, and is projected; The plurality of divided regions on the substrate; and in the fifth step, the characteristics of the projection system of the exposure device are evaluated. 12. For the evaluation method of the lithography system according to item 8 of the scope of patent application, wherein: the exposure device is a scanning exposure type exposure device that moves the photomask and the substrate in synchronization to expose the substrate; In the method, the image of the evaluation pattern is scanned and projected onto a plurality of divided regions on the substrate. In the fifth step, the dynamic control characteristics of the exposure device are evaluated. 13. The evaluation method of the lithography system according to item 9 of the scope of patent application, wherein: the aforementioned physical quantity is measured by a first sensor provided in the exposure device. 14. If the evaluation method of the lithography system in item 10 of the patent application scope is as follows:-The above-mentioned display is measured by the second sensor provided in the exposure device. 4 The paper size is applicable to China National Standard (CNS) A4. Specifications (210 X 297 mm) · Install -------- Order ----- II (Please read the precautions on the back before filling this page) 527638 A8 B8 C8 D8 The length deviation of the pattern in the aforementioned measuring direction. 15. For example, the evaluation method of the lithography system according to item 9 of the scope of patent application, which includes a step 6: measuring the development pattern of the aforementioned photosensitive material on the plurality of separated regions formed on the aforementioned substrate, and measuring the The length deviation in the measurement direction; and in the seventh step, the development unevenness of the aforementioned developing device is evaluated. 16. For the evaluation method of the lithography system in the 15th scope of the patent application, it includes a part: Step 8 is to apply the photosensitive material on other substrates by the aforementioned coating device; Step 9 is different from the foregoing The image of the pattern of the evaluation pattern is projected onto a plurality of divided regions on the substrate through a predetermined wide area within the effective field of view of the projection system, and the photosensitive material of the substrate coated with the photosensitive material is exposed; The step is to develop the photosensitive material exposed in step 9; and the step 11 is to measure the development pattern of the photosensitive material developed in step 10 to measure any of the aforementioned projection systems of the exposure device. Item characteristics. 17. The evaluation method of the lithographic system according to item 16 of the scope of patent application, which includes a part including: adjusting the aforementioned projection system according to the characteristics of the aforementioned projection system evaluated. 5 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -------- ^ --------- (Please read the precautions on the back before filling this page ) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 527638 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The exposure device is a scanning exposure type exposure device that synchronously moves the photomask and the substrate to expose the substrate, and further includes a step I2, in which a photosensitive material is applied to the test substrate by a coating device; the 13th step, The image of the photomask for evaluation is projected on a plurality of divided areas on the substrate by scanning and inserting exposure to expose the photosensitive material; Step 14 is to develop the photosensitive material exposed by Step 13; Step 15 , Is evaluated after observing and evaluating the dynamic control characteristics of the exposure device. 19. An evaluation method of a lithography system, comprising: an exposure device that exposes a substrate coated with a photosensitive material; and a substrate processing device that processes the substrate at least one of before and after the photosensitive material is exposed; The method further includes: forming a transfer image by transferring a pattern for evaluation to a photosensitive material by a lithography system; measuring a state of the transfer image; and independently evaluating the characteristics of the exposure device and the substrate processing device based on the measurement results. 20. For the evaluation method of the lithography system in item 19 of the scope of patent application, where: _ In order to independently obtain the characteristics of the aforementioned exposure device and the substrate processing device, the 6 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (21〇 x 297 mm) ----------------- (Please read the notes on the back before filling this page) 申清專利範圍 特性，在透過評價用圖案對基板進行曝光時，根據所欲求 得之特性來調整照明於評價用圖案之區域的大小。 21·如申請專利範圍第20項之微影系統之評價方法， 其中： 前述評價用圖案，含有爲了獨立求得曝光裝置的特性 與基板處理裝置的特性之圖案，觀測對應於獨立求得的特 性之圖案的顯像圖案。 22·如申請專利範圍第19項之微影系統之評價方法， 其中： 轉印像係感光材料感光後而成之潛像。 23·如申請專利範圍第19項之微影系統之評價方法， 其中： 基板處理裝置，包含有：塗布裝置，用來將感光材料 塗布於基板；以及顯像裝置，用來將形成有轉印像的感光 材料予以顯像。 24·如申請專利範圍第19項之微影系統之評價方法’ 其中： 前述曝光裝置的特性，係指曝光裝置中所具備的投影 系統之成像特性；前述基板處理裝置的特性，係指感光材 料的塗布不均。 25.—種基板處理裝置之調整方法，係與曝光裝置（對 塗布有感光材料的基板進行曝光）共同構成微影系統’在 前述感光材料之曝光前與曝光後至少一方，對前述基板進 行處理；並且包含： 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝---- 訂---------線赢 經濟部智慧財產局員工消費合作社印製 527638 六 A8 B8 C8 D8 、申請專利範圍 藉微影系統將評價用圖案轉印至基板上的感光材料而 形成轉印像； 測量該轉印像的狀態； 根據該測量結果’使前述基板處理裝置的特性係獨立 於前述曝光裝置的特性而予以檢測。 26. 如申請專利範圍第15項之基板處理裝置之調整方 法，其係進一步包含： 若是所檢測的特性並無法滿足既定數値，則對基板處 理裝置進行調整。 27. 如申請專利範圍第25項之基板處理裝置之調整方 法，其中： 轉印像係感光材料感光後而成的潛像。 28. 如申請專利範圍第25項之基板處理裝置之調整方 法，其中之基板處理裝置含有：塗布裝置，係用來將感光 材料塗布於基板；以及顯像裝置，係用來將形成有轉印像 的感光材料予以威像。 29·如申請專利範圍第25項之基板處理裝置之調整方 法，其中：前述曝光裝置的特性，係指曝光裝置所具備的 投影系統之成像特性；前述基板處理裝置的特性，係指感 光材料的塗布不均。 30.如申請專利範圍第25項之基板處理裝置之調整方 法’其中：則述評價用圖案係含有爲了獨立求得基板處理 裝置的特性與曝光裝置的特性之圖案。 31·—種微影系統，係將既定的顯像圖案形成在塗布有 --------^--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 私紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐 經濟部智慧財產局員工消費合作社印製 527638 A8 B8 C8 D8 六、申請專利範圍 感光材料的基板；並且具有： 塗布裝置’係將感光材料塗布於基板； 曝光裝置，係將塗布有感光材料的基板予以曝光； 顯像裝置，係將已曝光的感光材料予以顯像； 控制系統，用來控制曝光裝置，俾使藉前述塗布裝置 而塗布有感光材料的基板，藉由前述曝光裝置且透過既定 的評價用圖案而進行曝光； 感測器，係測量前述感光材料的顯像圖案之狀態（將 藉則述曝光裝置所曝光之基板，藉前述顯像裝置予以顯像 所得者）；及 判定系統，根據該感測器的測量資訊，將分別對顯像 圖案造成影饗之前述塗布裝置的特性、前述曝光裝置的特 性、以及前述顯像裝置的特性之一特性與其他特性作獨立 的判定。 32·如申請專利範圍第31項之微影系統，其中： 前述感測器，係測量感光材料的塗布不均、顯像不均 、以及曝光裝置的成像特性之至少一項。 33·如申請專利範圍第32項之微影系統，其中： 前述判定系統，係將前述一項的特性與預定的特性相 比較。 34.如申請專利範圍第33項之微影系統，其中： 曝光裝置包含：投影系統，用來將評價用圖案的像投 影於基板上；以及視野光圏，用來控制由投影系統所照明 之評價用圖案的照明視野； 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 527638 A8 B8 C8 D8 六、申請專利範圍 前述控制系統係根據所判定之特性來控制前述視野光 圏。 35·如申請專利範圍第31項之微影系統，其中： 前述感測器係設置於曝光裝置。 36·如申請專利範圍第31項之微影系統，其係進一步 包含搬送系統來搬送基板。 37·如申請專利範圍第31項之微影系統，其中： 前述評價用圖案，係包含用來分別測量感光材料的塗 布不均、顯像不均、及曝光裝置的成像特性之圖案。 38·—種曝光裝置，透過光罩對塗布有感光材料的基板 進行曝光，並且具有： 照明系統，對前述光罩提供照明， 基板台，進行基板之定位； 可變視野光圈，係將前述照明系統所產生之照明區域 的大小予以切換； 第1感測器，係對前述基板台上的基板上之顯像後的 感光材料之圖案的形狀所對應之物理量進行測量； 第2感測器，係對前述基板台上的基板上之顯像後的 感光材料之圖案的位置進行測量；及 判定系統，係根據前述第1感測器及第2感測器的檢 測結果，來對前述基板上的感光材料的狀態進行評價。 39·如申請專利範圍第38項之曝光裝置，其係進一步 包含投影系統，用來將照明系統的照明光投影於基板；判 定系統係採用前述第1感測器及第2感測器之至少一方來 ^ --------I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527638 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 對投影系統的成像特性進行評價。 4〇·如申請專利範圍第38項之曝光裝置，其中： 前述物理量係指感光材料的厚度，前述感光材料的狀 態係指感光材料的塗布不均及顯像不均。 41·如申請專利範圍第39項之曝光裝置，其係進一步 包含控制系統，用來控制前述可變視野光圈，當進行基板 上的感光材料的狀態之評價時，控制可變視野光圏，使其 較觀測投影系統的成像特性時更爲狹窄。 42. 如申請專利範圍第39項之曝光裝置，其中： 第2感測器，係用在進行基板相對於來自投影系統的 照明光之對準。 43. —種元件製造方法，係使用微影系統之元件製造方 法，包含·· 第1步驟，係藉塗布裝置將感光材料塗布於基板上； 第2步驟，係藉曝光裝置，透過評價用圖案對塗布有 前述感光材料的基板進行曝光； 第3步驟，係藉顯像裝置對前述基板的前述感光材料 進行顯像； 第4步驟，係測量前述顯像後之基板上的前述感光材 料的顯像圖案； 第5步驟，係根據第4步驟的測量結果，將分別對顯 像圖案造成影響的前述塗布裝置的特性、前述曝光裝置的 特性、以及前述顯像裝置的特性之至少一項特性，與其他 特性作獨立評價； 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I— --------^--------- (請先閱讀背面之注意事項再填寫本頁) 527638 A8 B8 C8 D8 六、申請專利範圍 第6步驟，係根據評價所得之特性，來對具有評價特 性的裝置進行調整;及 第7步驟，係在第6步驟的調整之後，以元件形成用 圖案代替評價用圖案而實施第1〜第3的步驟，來獲得形 成有元件形成用的顯像圖案之基板。 44·一種測定方法，係用來測定藉曝光裝置所曝光的基 板之感光材料的塗布狀態，前述曝光裝置係包含：照明系 統（對塗布有感光材料的基板予以照明）、以及檢測器（ 將被照明的基板所反射的光予以檢測），並且 使塗布有感光材料的基板透過評價用標記而感光， 將感光後之評價用標記的感光圖案之狀態予以檢測， 以求得感光材料的塗布狀態。 45·如申請專利範圍第44項之測定方法，其中： 前述基板形成有評價用標記。 46·如申請專利範圍第44項之測定方法，其中： 使基板透過評價用標記而感光之後，進一步進行顯像 ’將顯像後的評價用標記的感光圖案之狀態予以檢測，而 求得感光材料的塗布狀態。 47·如申請專利範圍第44項之測定方法，其中： 係使用前述檢測器來檢測前述感光圖案的狀態，前述 檢測器係在對基板進行曝光時，對基板的曝光位置進行對 準所使用之檢測器。 48·如申請專利範圍第44項之測定方法，其中： 當使基板透過評價用標記而感光之際，係使用來自曝 12 本&張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝 -----訂---- 經濟部智慧財產局員工消費合作社印製 A8B8C8D8 527638 六、申請專利範圍 (請先閲讀背面之注意事項再塡寫本頁) 5屯如申請專利範圍第19項之微影系統之評價方法， 其係根據前述測量結果來檢測前述基板處理裝置的特性， 並按照前述所檢測的特性來調整前述基板處理裝置； 前述基板處理裝置，係藉由調整後之微影系統將評價 用圖案轉印在感光材料而形成轉印像，並根據該轉印像之 狀態之測量結果來檢測前述曝光裝置的特性。 55·如申請專利範圍第19項之微影系統之評價方法， 其係根據前述測量結果來檢測前述基板處理裝置的特性， 並根據前述測量結果及前述所檢測之基板處理裝置的特性 ，來檢測前述曝光裝置的特性。 56·如申請專利範圍第54或55項之微影系統之評價方 法，其中，前述曝光裝置，在元件製造時，以使具有元件 圖案的第1.物體與感光性的第2物體同步移動之掃描曝光 方式’將則述兀件圖案轉印於前述第2物體上，而在前述 轉印像之形成時，以靜止曝光方式將評價用圖案轉印在基 板上。 57. 如申請專利範圍第56項之微影系統之評價方法， 其係按照前述檢測之曝光裝置的特性，來調整前述曝光裝 置。 58. 如申請專利範圍第57項之微影系統之評價方法， 其係有別於以前述靜止曝光方式來形成前述轉印像，而以 掃描曝光方式將評價用圖案轉印在基板上來形成轉印像， 並根據該轉印像之狀態之測量結果來檢測前述曝光裝置的 動態特性。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 527638 A8 驾 D8 六、申請專利範圍 (請先閲讀背面之注意事項再塡寫本頁) 59.如申請專利範圍第58項之微影系統之評價方法， 其中，前述曝光裝置具有投影系統，用以形成前述各圖案 之投影像，前述曝光裝置的特性至少含有前述投影系統之 光學特性。 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐)The characteristics of the patent scope are declared, and when the substrate is exposed through the evaluation pattern, the size of the area illuminated by the evaluation pattern is adjusted according to the desired characteristics. 21 · The evaluation method of the lithography system according to item 20 of the patent application scope, wherein: the aforementioned evaluation pattern includes a pattern for independently obtaining the characteristics of the exposure device and the characteristics of the substrate processing device, and observing the characteristics corresponding to the independently obtained characteristics The development pattern of the pattern. 22. The evaluation method of the lithography system according to item 19 of the patent application scope, wherein: the transfer image is a latent image formed after the photosensitive material is photosensitive. 23. The evaluation method of the lithography system according to item 19 of the patent application scope, wherein: the substrate processing device includes: a coating device for coating the photosensitive material on the substrate; and a developing device for transferring the formed material The image is developed by a photosensitive material. 24. Evaluation method of lithography system according to item 19 of the scope of patent application ', where: The characteristics of the aforementioned exposure device refer to the imaging characteristics of the projection system provided in the exposure device; the characteristics of the aforementioned substrate processing device refer to the photosensitive material Uneven coating. 25. A method for adjusting a substrate processing apparatus is to form a lithography system together with an exposure device (exposing a substrate coated with a photosensitive material) to process the substrate before at least one of the foregoing photosensitive material and after the exposure. ; And contains: 7 This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page)-Install ---- Order ------ --- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs of the Ministry of Economic Affairs, printed 527638 six A8 B8 C8 D8, the scope of patent application by the lithography system to transfer the evaluation pattern to the photosensitive material on the substrate to form a transfer image; measure the transfer The state of printing; based on the measurement result, the characteristics of the substrate processing apparatus are detected independently of the characteristics of the exposure apparatus. 26. If the method for adjusting the substrate processing device of the scope of application for patent No. 15 further includes: If the detected characteristics do not satisfy the predetermined number, adjust the substrate processing device. 27. The method for adjusting a substrate processing apparatus according to item 25 of the scope of patent application, wherein: the transfer image is a latent image formed after the photosensitive material is photosensitive. 28. The method for adjusting a substrate processing apparatus according to item 25 of the patent application scope, wherein the substrate processing apparatus includes: a coating device for coating a photosensitive material on a substrate; and a developing device for transferring a formed material The image of the photosensitive material is magnified. 29. The method for adjusting a substrate processing apparatus according to item 25 of the application for a patent, wherein: the characteristics of the aforementioned exposure apparatus refer to the imaging characteristics of the projection system provided by the exposure apparatus; the characteristics of the aforementioned substrate processing apparatus refer to the characteristics of the photosensitive material Uneven coating. 30. A method for adjusting a substrate processing apparatus according to item 25 of the scope of patent application ', wherein: the evaluation pattern includes a pattern for independently obtaining the characteristics of the substrate processing apparatus and the characteristics of the exposure apparatus. 31 · —A kind of lithography system, which forms a predetermined development pattern on the coated with -------- ^ --------- (Please read the precautions on the back before filling in this page) The private paper standard printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs applies the Chinese National Standard (CNS) A4 (210 X 297 mm) printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by 527638 A8 B8 C8 D8 And a: a coating device that applies a photosensitive material to the substrate; an exposure device that exposes the substrate coated with the photosensitive material; a developing device that develops the exposed photosensitive material; a control system that uses To control the exposure device so that the substrate coated with the photosensitive material by the coating device is exposed through the exposure device and a predetermined evaluation pattern; the sensor measures the state of the developing pattern of the photosensitive material (The substrates exposed by the exposure device will be developed by the aforementioned imaging device); and the determination system, based on the measurement information of the sensor, The characteristics of the coating device, the characteristics of the exposure device, and the characteristics of one of the characteristics of the developing device and the other characteristics are affected independently by the development pattern. 32. As the 31st item in the scope of the patent application Photographic system, wherein: the aforementioned sensor measures at least one of uneven application of the photosensitive material, development unevenness, and imaging characteristics of the exposure device. 33. The lithographic system according to item 32 of the patent application scope, wherein : The aforementioned determination system compares the characteristics of the foregoing item with predetermined characteristics. 34. The lithography system according to item 33 of the patent application scope, wherein: the exposure device includes: a projection system, which is used to compare the image of the evaluation pattern Projected on the substrate; and the field of vision, which is used to control the field of view of the evaluation pattern illuminated by the projection system; 9 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). ----- Order --------- (Please read the precautions on the back before filling out this page) 527638 A8 B8 C8 D8 VI. Scope of patent application The aforementioned control system is based on the judgment Characteristics to control the aforementioned field of vision. 35. For example, the lithographic system according to item 31 of the scope of patent application, wherein: the aforementioned sensor is provided in an exposure device. 36. For example, the lithographic system according to item 31 of the scope of patent application, which It further includes a conveying system for conveying the substrate. 37. The lithographic system according to item 31 of the patent application scope, wherein: the aforementioned evaluation pattern includes a coating unevenness, a development unevenness, and an exposure device for measuring the photosensitive material respectively 38 · —An exposure device that exposes a substrate coated with a photosensitive material through a photomask and has: an illumination system that provides illumination to the aforementioned photomask, a substrate table, and positioning of the substrate; a variable field of view Aperture is used to switch the size of the illumination area generated by the aforementioned lighting system; the first sensor is used to measure the physical quantity corresponding to the shape of the pattern of the developed photosensitive material on the substrate on the substrate table; The second sensor measures the position of the pattern of the photosensitive material after development on the substrate on the substrate stage; and determines The system evaluates the state of the photosensitive material on the substrate based on the detection results of the first sensor and the second sensor. 39. The exposure device according to item 38 of the patent application scope, further comprising a projection system for projecting the illumination light of the illumination system on the substrate; the determination system uses at least the aforementioned first sensor and the second sensor One side comes ^ -------- I (Please read the precautions on the back before filling this page) Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is sized according to Chinese National Standard (CNS) A4 (210 X 297 mm) 527638 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 Six. Patent application scope To evaluate the imaging characteristics of the projection system. 40. The exposure device according to item 38 of the scope of patent application, wherein: the aforementioned physical quantity refers to the thickness of the photosensitive material, and the state of the aforementioned photosensitive material refers to uneven coating and development unevenness of the photosensitive material. 41. The exposure device according to item 39 of the patent application scope, further comprising a control system for controlling the aforementioned variable field of view aperture. When evaluating the state of the photosensitive material on the substrate, the variable field of view is controlled so that It is narrower than when observing the imaging characteristics of a projection system. 42. The exposure apparatus according to item 39 of the patent application scope, wherein: the second sensor is used for aligning the substrate with respect to the illumination light from the projection system. 43. —A component manufacturing method, which is a component manufacturing method using a lithography system, includes the first step of coating a photosensitive material on a substrate by a coating device; the second step of using an exposure device to pass through an evaluation pattern The substrate coated with the photosensitive material is exposed. The third step is to develop the photosensitive material on the substrate by a developing device. The fourth step is to measure the development of the photosensitive material on the substrate after the development. Image pattern; the fifth step is at least one of the characteristics of the coating device, the characteristics of the exposure device, and the characteristics of the development device, which will affect the development pattern, respectively, based on the measurement results of the fourth step, Independent evaluation with other characteristics; 11 This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) I— -------- ^ --------- (please first (Please read the notes on the back and fill in this page) 527638 A8 B8 C8 D8 6. The sixth step of the scope of patent application is to adjust the device with evaluation characteristics based on the characteristics obtained from the evaluation; and Step, after the adjustment based on the step 6 to the step of forming a pattern element of the embodiments 1 ~ 3 in place of the pattern for evaluation, a substrate obtained by forming a pattern of the imaging element is formed. 44. A measuring method for measuring a coating state of a photosensitive material of a substrate exposed by an exposure device, the exposure device including: an illumination system (illumination of a substrate coated with a photosensitive material), and a detector (to be The light reflected from the illuminated substrate is detected), and the substrate coated with the photosensitive material is exposed to light through the evaluation mark, and the state of the photosensitive pattern of the evaluation mark after the light exposure is detected to obtain the coating state of the photosensitive material. 45. The measuring method according to item 44 of the scope of patent application, wherein: the substrate is formed with an evaluation mark. 46. The measurement method according to item 44 of the scope of patent application, wherein: after the substrate is exposed to light through the evaluation mark, it is further developed to detect the state of the photosensitive pattern of the evaluation mark after development to obtain the light sensitivity. The coating state of the material. 47. The measuring method according to item 44 of the scope of patent application, wherein: the state of the photosensitive pattern is detected using the detector, and the detector is used to align the exposure position of the substrate when the substrate is exposed Detector. 48. The measurement method according to item 44 of the scope of patent application, in which: When the substrate is exposed to light through the evaluation mark, 12 exposures are used, and the Chinese standard (CNS) A4 specification (210 X 297) is used. (Mm) (Please read the precautions on the back before filling out this page) -Installation ----- Order ---- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8B8C8D8 527638 6. Scope of patent application (please read the back first (Notes on this page are reproduced on this page.) 5 The evaluation method of the lithography system such as item 19 of the scope of patent application is to detect the characteristics of the aforementioned substrate processing device based on the aforementioned measurement results, and adjust according to the aforementioned detected characteristics. The aforementioned substrate processing apparatus; the aforementioned substrate processing apparatus transfers an evaluation pattern to a photosensitive material by an adjusted lithographic system to form a transfer image, and detects the exposure apparatus based on a measurement result of a state of the transferred image Characteristics. 55. If the evaluation method of the lithography system according to item 19 of the patent application scope is to detect the characteristics of the substrate processing apparatus according to the foregoing measurement results, and to detect the characteristics of the substrate processing apparatus according to the foregoing measurement results and the characteristics of the substrate processing apparatus detected above Characteristics of the aforementioned exposure device. 56. The evaluation method of the lithography system according to item 54 or 55 of the patent application scope, wherein the aforementioned exposure device moves the first object having the element pattern and the second photosensitive object synchronously when the element is manufactured. In the scanning exposure method, the element pattern is transferred to the second object, and when the transfer image is formed, the evaluation pattern is transferred to the substrate by a static exposure method. 57. If the evaluation method of the lithography system according to item 56 of the patent application scope is to adjust the aforementioned exposure device according to the characteristics of the aforementioned exposed device. 58. If the evaluation method of the lithography system in the 57th aspect of the application for a patent is different from the aforementioned static exposure method to form the aforementioned transfer image, the scanning exposure method is used to transfer the evaluation pattern onto a substrate to form a transfer film. The image is printed, and the dynamic characteristics of the exposure device are detected based on the measurement results of the state of the transferred image. This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 527638 A8 Driving D8 6. Scope of patent application (Please read the precautions on the back before writing this page) 59. If the scope of patent application is 58 In the evaluation method of the lithography system, the exposure device has a projection system for forming a projection image of each pattern, and the characteristics of the exposure device include at least the optical characteristics of the projection system. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417928B (en) * 2003-05-09 2013-12-01 Ebara Corp Electron beam apparatus, inspection apparatus using electron beam and method for determining exposure conditions

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003218022A (en) * 2002-01-28 2003-07-31 Tokyo Electron Ltd Substrate processing method and substrate processing apparatus
KR100528971B1 (en) * 2003-05-02 2005-11-16 한국전자통신연구원 Electron beam lithography system
JP6415186B2 (en) * 2014-08-27 2018-10-31 キヤノン株式会社 Evaluation mask, evaluation method, exposure apparatus, and article manufacturing method
KR102549429B1 (en) * 2018-05-31 2023-06-28 어플라이드 머티어리얼스, 인코포레이티드 Multi-Substrate Processing on Digital Lithography Systems
CN113504711B (en) * 2021-06-28 2023-05-02 上海华虹宏力半导体制造有限公司 Method for detecting photoetching development

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2560371B2 (en) * 1988-01-05 1996-12-04 株式会社ニコン Substrate processing system
JP2580668B2 (en) * 1988-01-21 1997-02-12 株式会社ニコン Exposure method, exposure condition measurement method and pattern measurement method
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JPH0289305A (en) * 1988-09-27 1990-03-29 Nikon Corp Lithography device
JPH0828321B2 (en) * 1990-08-20 1996-03-21 松下電器産業株式会社 Resist coating evaluation method
JPH04168715A (en) * 1990-10-31 1992-06-16 Nec Yamagata Ltd Forming device for photoresist pattern
JPH05102031A (en) * 1991-10-04 1993-04-23 Fujitsu Ltd Sensitivity measurement of photosensitive film, and formation of corrosion-resistant film
US5283141A (en) * 1992-03-05 1994-02-01 National Semiconductor Photolithography control system and method using latent image measurements
JP3058541B2 (en) * 1993-08-31 2000-07-04 ホーヤ株式会社 Resist pattern forming condition determining method and resist pattern forming method
JPH09218500A (en) * 1996-02-14 1997-08-19 Dainippon Printing Co Ltd Manufacture of resist patterns
JPH09232223A (en) * 1996-02-19 1997-09-05 Canon Inc Method for alignment
JPH09257457A (en) * 1996-03-18 1997-10-03 Matsushita Electron Corp Measuring method for shape of pattern and measuring method for position of pattern
JPH10260010A (en) * 1997-03-19 1998-09-29 Nikon Corp Mark measuring method and its device
JP4253860B2 (en) * 1998-04-15 2009-04-15 ソニー株式会社 Exposure method and exposure apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417928B (en) * 2003-05-09 2013-12-01 Ebara Corp Electron beam apparatus, inspection apparatus using electron beam and method for determining exposure conditions

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