JPH05102031A - Sensitivity measurement of photosensitive film, and formation of corrosion-resistant film - Google Patents
Sensitivity measurement of photosensitive film, and formation of corrosion-resistant filmInfo
- Publication number
- JPH05102031A JPH05102031A JP25738591A JP25738591A JPH05102031A JP H05102031 A JPH05102031 A JP H05102031A JP 25738591 A JP25738591 A JP 25738591A JP 25738591 A JP25738591 A JP 25738591A JP H05102031 A JPH05102031 A JP H05102031A
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- JP
- Japan
- Prior art keywords
- photosensitive
- photosensitive film
- film
- image data
- sensitivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体装置を製造する
場合のフォトリソグラフィー工程における感光性被膜
(フォトレジスト)の塗布、露光、現像工程、特に感光
性被膜の感度測定法及び耐蝕性マスクの形成法に関す
る。近年、半導体装置の微細化にともない、基板上に塗
布された感光性被膜の塗布膜厚の管理、および同一基板
内の感光性被膜の実効的現像時間、あるいは、現像進行
速度の均一性(ユニフォーミティ)の管理が重要にな
り、そのため、感光性被膜の膜厚の測定に極めて高精度
の測定技術が要求され、その測定結果に基づく適正な膜
厚の設定、感光性被膜の特性のばらつき等に対する塗布
条件の迅速かつ正確な補正手段が求められている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a process of coating, exposing and developing a photosensitive film (photoresist) in a photolithography process for manufacturing a semiconductor device, and particularly to a method for measuring the sensitivity of the photosensitive film and a corrosion-resistant mask. Regarding formation method. In recent years, with the miniaturization of semiconductor devices, the control of the coating thickness of the photosensitive coating applied on the substrate, the effective development time of the photosensitive coating on the same substrate, or the uniformity of the developing speed (uniformity). It is important to control the thickness of the photosensitive film. Therefore, a highly accurate measurement technique is required to measure the film thickness of the photosensitive film. The proper film thickness setting based on the measurement results, variations in the characteristics of the photosensitive film, etc. There is a need for a quick and accurate means of correcting the coating conditions for.
【0002】[0002]
【従来の技術】感光性被膜の感度は、感光性被膜の不溶
化(ネガレジストの場合)あるいは可溶化(ポジレジス
トの場合)に必要なエネルギー量で表されるが、従来、
基板上に均一な厚さで塗布された感光性被膜の異なった
領域を異なった露光量で露光した後に規定条件で現像
し、現像後の感光性被膜の残存膜厚を測定し、露光エネ
ルギーと残存膜厚の関係を示す特性図を作製することに
よって感光性被膜の感度を測定し、測定された感度に所
定の係数を乗じた値に基づいて製造工程における露光量
を決定していた。2. Description of the Related Art The sensitivity of a photosensitive film is represented by the amount of energy required to insolubilize the photosensitive film (in the case of a negative resist) or solubilize it (in the case of a positive resist).
After exposing different areas of the photosensitive coating applied with a uniform thickness on the substrate with different exposure doses, developing under specified conditions, measuring the remaining film thickness of the photosensitive coating after development, and measuring the exposure energy The sensitivity of the photosensitive film was measured by preparing a characteristic diagram showing the relationship of the remaining film thickness, and the exposure amount in the manufacturing process was determined based on the value obtained by multiplying the measured sensitivity by a predetermined coefficient.
【0003】また、感光性被膜の膜厚の測定管理は、感
光性被膜の各膜厚に対して、上記手法によって得られた
膜厚と感度の相関図を用い、偏光解析法、干渉法等の光
学式膜厚測定法によって測定された膜厚を基になされて
いた。Further, the measurement and control of the film thickness of the photosensitive film is performed by using the correlation diagram of the film thickness and the sensitivity obtained by the above-mentioned method for each film thickness of the photosensitive film, by the ellipsometry method, the interferometry method, etc. It was based on the film thickness measured by the optical film thickness measurement method.
【0004】[0004]
【発明が解決しようとする課題】ところが、上記従来の
技術においては、現像後の感光性被膜の膜厚を、偏光解
析法、干渉法等の光学式測定法によって測定し、その測
定値を基に感光性被膜の膜厚の制御を行っていたため、
感度測定の精度の影響を受けやすく、かつ、膨大な人手
と時間を要する作業となっていた。However, in the above conventional technique, the film thickness of the photosensitive film after development is measured by an optical measurement method such as ellipsometry and interferometry, and the measured value is used as a basis. Since the film thickness of the photosensitive film was controlled in
The work was easily affected by the accuracy of the sensitivity measurement, and required a lot of manpower and time.
【0005】さらに、現像工程における感光性被膜の実
効的現像時間、あるいは、現像速度の面内均一性の測定
にあたっては、感度と塗布膜厚の相関図から得られた膜
厚の感光性被膜を基板上に均一に形成した後に、複数の
領域を均一な露光量で露光した試料を現像し、現像後の
感光性被膜の残存膜厚の状態を見ていたため、前記と同
様に測定した感光性被膜の感度が基本となり、直接膜厚
の測定精度の影響を受け、膨大な手間がかかる作業とな
っていた。Further, in measuring the effective developing time of the photosensitive film in the developing step or the in-plane uniformity of the developing speed, the photosensitive film having the film thickness obtained from the correlation diagram between the sensitivity and the coating film thickness is used. After uniformly forming on the substrate, the sample exposed to a plurality of areas with a uniform exposure amount was developed, and the state of the remaining film thickness of the photosensitive film after development was observed. The sensitivity of the coating is fundamental, and it is directly affected by the measurement accuracy of the film thickness, which requires a huge amount of work.
【0006】そのため、現像後の感光性被膜の配線パタ
ーンの幅を設計値どおりにできなかったり、基板面内
で、配線パターンの幅がばらつくといった問題があっ
て、配線の幅が設計値とは異なる不良品が発生する原因
となっていた。Therefore, there is a problem that the width of the wiring pattern of the photosensitive film after development cannot be as designed, or the width of the wiring pattern varies within the substrate surface. It was a cause of different defective products.
【0007】本発明は、迅速で正確な感光性被膜の感度
測定法を提供し、その結果、半導体装置を製造する場合
のフォトリソグラフィー工程を改善し、省力化すること
を目的とする。It is an object of the present invention to provide a rapid and accurate method for measuring the sensitivity of a photosensitive film, and as a result, improve the photolithography process in manufacturing a semiconductor device and save labor.
【0008】[0008]
【課題を解決するための手段】本発明にかかる感光性被
膜の感度測定法においては、上記の目的を達成するた
め、基板の上に形成された感光性被膜の複数の領域を異
なる露光量で露光し、露光されたこの感光性被膜を現像
し、現像された感光性被膜の残存膜厚の状態を位置と輝
度信号からなる画像データに変換し、この画像データと
露光量データを情報処理する構成を採用した。In the method for measuring the sensitivity of a photosensitive film according to the present invention, in order to achieve the above object, a plurality of regions of the photosensitive film formed on a substrate are exposed at different exposure doses. The exposed photosensitive film is exposed and developed, the state of the remaining film thickness of the developed photosensitive film is converted into image data consisting of a position and a luminance signal, and this image data and exposure amount data are processed. Adopted the configuration.
【0009】[0009]
【作用】本発明によると、感光性被膜を基板上に塗布
し、この感光性被膜の複数の領域を異なる露光量で露光
し、規定条件で現像した後の感光性被膜の残存膜厚の状
態を画像処理して輝度信号からなる画像データとし、こ
の画像データと露光量データを情報処理するため、感光
性被膜の感度を自動的に正確、かつ、迅速に測定するこ
とができる。According to the present invention, the state of the remaining film thickness of the photosensitive film after coating the photosensitive film on the substrate, exposing a plurality of regions of the photosensitive film with different exposure amounts, and developing under the specified conditions Is image-processed into image data composed of a luminance signal, and the image data and the exposure amount data are processed as information, so that the sensitivity of the photosensitive film can be automatically and accurately measured.
【0010】また、このように得られた感度によって、
感光性被膜の適正膜厚を得る回転塗布装置(スピンコー
タ)の回転数、露光量等を、感光性被膜の膜厚自体を測
定することなく自動的に決定することができる。Further, according to the sensitivity thus obtained,
The number of revolutions of the spin coater (spin coater) for obtaining an appropriate film thickness of the photosensitive film, the exposure amount, etc. can be automatically determined without measuring the film thickness itself of the photosensitive film.
【0011】そしてまた、回転塗布装置の最適回転数を
感光性塗料の特性によって補正すること、および、現像
工程の異常を検出することができ、ひいては、現像後の
感光性被膜のパターン幅を安定化することができ、製造
工程における不良品の発生を未然に防ぐことができる。Further, it is possible to correct the optimum number of revolutions of the spin coater according to the characteristics of the photosensitive coating material and to detect an abnormality in the developing process, and thus to stabilize the pattern width of the photosensitive film after development. It is possible to prevent the occurrence of defective products in the manufacturing process.
【0012】[0012]
【実施例】以下、本発明の実施例を説明する。 (第1実施例) 〔感光性被膜の感度測定法〕図1(A)〜(C)は、本
発明の第1実施例の感光性被膜の感度測定法の説明図で
ある。この図において、1は感光性被膜が形成された基
板、21 、22 、23 、24 、25 、26 、27 、28
は露光領域、31 、32 、33 、34 、35 、36 、3
7 、38 は耐蝕性被膜、4は画像データ形成領域であ
る。EXAMPLES Examples of the present invention will be described below. First Example [Method for Measuring Sensitivity of Photosensitive Coating] FIGS. 1A to 1C are explanatory views of the method for measuring sensitivity of a photosensitive coating according to the first example of the present invention. In this figure, 1 is a substrate on which a photosensitive film is formed, 2 1 , 2 2 , 2 3 , 2 4 , 2 5 , 2 6 , 2 7 , 2 8
Is the exposure area, 3 1 , 3 2 , 3 3 , 3 4 , 3 5 , 3 6 , 3
7, 3 8 corrosion-resistant coating, 4 denotes an image data formation region.
【0013】この図1(A)〜(C)によって、この実
施例の感光性被膜の感度測定法を説明する。 手順1 半導体ウェハ等の基板1の上にポジ型感光性塗料を回転
塗布装置によって塗布し、薄い一様な厚さの感光性被膜
を形成する。A method of measuring the sensitivity of the photosensitive film of this embodiment will be described with reference to FIGS. Procedure 1 A positive photosensitive paint is applied onto a substrate 1 such as a semiconductor wafer by a spin coater to form a thin photosensitive film having a uniform thickness.
【0014】手順2 形成された感光性被膜の異なった露光領域21 、22 、
23 、24 、25 、2 6 、27 、28 に、ステップ式投
影露光装置によってショット毎の露光量を変えて、異な
った露光量P1 、P2 、P3 、P4 、P5 、P6 、
P7 、P8 で露光を行う(図1(A)参照)。この図に
おいては、横線の密度が高い方が露光量が小さく(暗
く)、横線の密度が低い方が露光量が大きい(明るい)
ことを示している。Procedure 2 Different exposure areas 2 of the formed photosensitive coating1Two2,
Two3TwoFourTwoFiveTwo 6Two7Two8To step throw
By changing the exposure amount for each shot by the shadow exposure device,
Exposure amount P1, P2, P3, PFour, PFive, P6,
P7, P8Exposure is performed (see FIG. 1A). In this figure
In particular, the higher the horizontal line density, the smaller the exposure amount (dark
The lower the horizontal line density, the larger the exposure amount (bright).
It is shown that.
【0015】手順3 露光された感光性被膜を規定条件で現像し、ベーキング
して、露光量に応じて残存膜厚が異なる耐蝕性被膜
31 、32 、33 、34 、35 、36 、37 、38を形
成する(図1(B)参照)。この図においては、横線の
密度が高い方が残存膜厚が厚く、横線の密度が低い方が
残存膜厚が薄いことを示している。Step 3 The exposed photosensitive film is developed under specified conditions and baked, and the corrosion-resistant films 3 1 , 3 2 , 3 3 , 3 4 , 3 5 , having different residual film thicknesses depending on the exposure amount, 3 6 , 3 7 , and 3 8 are formed (see FIG. 1B). In this figure, the higher the horizontal line density, the thicker the residual film thickness, and the lower the horizontal line density, the thinner the residual film thickness.
【0016】手順4 現像した結果残存した耐蝕性被膜31 〜38 を含む画像
データ形成領域4内の輝度をCCD撮像装置によって読
み取って画像データを得る。この画像データから耐蝕性
被膜31 〜38 をパターン認識し、露光量に対応する耐
蝕性被膜31 〜38 の輝度を決定する。各露光領域の輝
度信号は、露光量が小さい方から大きい方に向かって順
次変化し、ある露光量以上で一定のレベルに収束する。[0016] Procedure obtain image data read by the CCD image pickup device brightness of the image data forming region 4 containing 4 corrosion resistant coating 3 1 to 3 8 was developed as a result remains. The image data corrosion coatings 3 1 to 3 8 pattern recognition to determine the brightness of the corrosion-resistant coating 3 1 to 3 8 corresponding to the exposure amount. The brightness signal of each exposure region sequentially changes from the smaller exposure amount to the larger exposure amount, and converges to a constant level at a certain exposure amount or more.
【0017】さらに具体的に説明すると、ポジ型の感光
性被膜を用い、シリコン基板を用いた場合は、各露光領
域の画像データである輝度信号は、露光量が小さい方か
ら大きい方に向かって(図1(B)においては左から右
に向かって)順次増大し、ある露光量以上では、その露
光領域の感光性被膜が現像によって全て溶解して、光の
反射係数が高い基板の表面が露出するため、露光領域の
輝度信号は最高の一定のレベル収束する。More specifically, when a positive type photosensitive film is used and a silicon substrate is used, the brightness signal which is the image data of each exposure area is directed from the smaller exposure amount to the larger exposure amount. (In FIG. 1 (B), it increases from left to right) sequentially, and above a certain exposure amount, the photosensitive film in the exposed region is completely dissolved by the development, and the surface of the substrate having a high light reflection coefficient is Because of the exposure, the brightness signal in the exposure area converges at the highest constant level.
【0018】基板の光の反射係数が感光性被膜より低い
場合は、この説明とは逆に、各露光領域の輝度信号は、
露光量が大きくなるに従って順次減少し、ある露光量以
上では最低のレベル収束することになる。またネガ型の
感光性被膜を用いる場合は、上記ポジ型についての説明
とは逆になる。When the light reflection coefficient of the substrate is lower than that of the photosensitive film, contrary to this explanation, the luminance signal of each exposure area is
It gradually decreases as the exposure amount increases, and the lowest level converges when the exposure amount exceeds a certain value. When a negative type photosensitive coating is used, the explanation is the reverse of that of the positive type.
【0019】手順5 画像データを処理して感光性被膜の感度を決定する。図
1(C)は、露光量と輝度信号の関係を示す特性図であ
る。この図に見られるように、露光量がP1〜P4 と増
大するに従って、輝度は順次増大し、P4 以上は最高の
一定のレベルに収束している。このように輝度が増大傾
向から収束に移行する点の露光量がその感光性被膜の感
度(Eth)と定義されている。この感度は、露光量が
増大するに従って変化する輝度信号の前後の信号強度を
比較する情報処理によって自動的に決定することができ
る。Step 5 The image data is processed to determine the sensitivity of the photosensitive coating. FIG. 1C is a characteristic diagram showing the relationship between the exposure amount and the luminance signal. As can be seen in this figure, as the exposure amount increases from P 1 to P 4 , the luminance increases sequentially, and P 4 and above converge to the highest constant level. The exposure amount at the point where the luminance tends to increase and then converges is defined as the sensitivity (Eth) of the photosensitive film. This sensitivity can be automatically determined by information processing comparing the signal intensities before and after the luminance signal that changes as the exposure amount increases.
【0020】(第2実施例) 〔感光性被膜の感度測定法〕図2(A)、(B)は、本
発明の第2実施例の感光性被膜の感度測定法の説明図で
ある。この図において、5が位置マーク用露光領域、6
が位置マークであるほかは図1において同符号を付して
説明したものと同様である。(Second Embodiment) [Method for Measuring Sensitivity of Photosensitive Coating] FIGS. 2A and 2B are explanatory views of the method for measuring sensitivity of a photosensitive coating according to the second embodiment of the present invention. In this figure, 5 is the exposure area for position mark, and 6 is
1 is the same as that described with the same reference numerals in FIG. 1 except that it is a position mark.
【0021】この実施例においては、基板1の上に形成
されたポジ型感光性被膜の異なった露光領域21 、
22 、23 、24 、25 、26 、27 、28 に、異なっ
た露光量P1 、P2 、P3 、P4 、P5 、P6 、P7 、
P8 で露光を行う場合、これらP 1 〜P8 の露光領域と
一定の位置関係を有する位置マーク用露光領域5に一定
形状の位置マークを露光する(図2(A)参照)。そし
て、現像した後、この位置マーク6を基準にして耐蝕性
被膜31 〜38 の輝度をCCD撮像装置によって読み取
り画像データに変換する(図2(A)参照)。In this embodiment, it is formed on the substrate 1.
Exposure areas 2 of the positive-working photosensitive coating1,
Two2Two3TwoFourTwoFiveTwo6Two7Two8Differently
Exposure P1, P2, P3, PFour, PFive, P6, P7,
P8When exposing with P 1~ P8Exposure area of
Fixed to the position mark exposure area 5 having a fixed positional relationship
The shape position mark is exposed (see FIG. 2A). That
After development, corrosion resistance is based on this position mark 6
Film 31~ 38The brightness of the image with a CCD imager
Converted into image data (see FIG. 2A).
【0022】この実施例によると、位置マーク6を基準
にして耐蝕性被膜31 〜38 の輝度を検出することがで
きるから、耐蝕性被膜31 〜38 の位置情報を得るため
のパターン認識をする必要がなく、迅速に耐蝕性被膜3
1 〜38 の輝度を読み取り画像データに変換することが
できる。The pattern for obtaining According to this embodiment, since it is possible to detect the intensity of the corrosion-resistant coating 3 1 to 3 8 based on the position mark 6, the position information of the corrosion-resistant coating 3 1 to 3 8 Corrosion-resistant coating 3 without the need for recognition
It is possible to convert the brightness of 1 to 3 8 into read image data.
【0023】(第3実施例) 〔感光性被膜の露光法〕この実施例は、第1実施例ある
いは第2実施例によって測定した感度に所定の係数を乗
じた数値に基づいて製造工程において感光性被膜を適正
に露光する方法である。(Third Embodiment) [Exposure Method for Photosensitive Coating] In this embodiment, the sensitivity measured in the first embodiment or the second embodiment is multiplied by a predetermined coefficient to determine the exposure in the manufacturing process. It is a method of exposing the coating film properly.
【0024】この係数は、ある光エネルギーによって、
所定の線幅のパターンを正確かつ安定に形成することが
できる範囲の数値で、通常2前後の数値が用いられ、感
度(Eth)が異なっても概ね不変の数値が使用され
る。This coefficient is
A numerical value of about 2 is usually used within a range in which a pattern having a predetermined line width can be formed accurately and stably, and a numerical value that is almost invariable even if the sensitivity (Eth) is different is used.
【0025】感光性被膜の感度を、現像後の残存膜厚を
測定することによって測定し、これに上記の係数を乗じ
た数値に基づく露光量をもって露光すること自体は、人
手によって従来から行われていたことであるが、本発明
によると、この係数を予め露光装置の制御装置に入力し
ておくことによって、露光量を自動的に設定して露光す
ることができる。The sensitivity of the photosensitive film is measured by measuring the residual film thickness after development, and exposure with an exposure amount based on the value obtained by multiplying the coefficient by the above coefficient is conventionally performed manually. According to the present invention, however, the exposure amount can be automatically set and exposure can be performed by inputting this coefficient in advance to the control device of the exposure apparatus.
【0026】(第4実施例) 〔感光性被膜の露光法〕現在用いられている露光装置の
光源は単色光であるから、レジスト膜である耐蝕性被膜
には露光光による干渉効果を生じる。(Fourth Embodiment) [Exposure Method for Photosensitive Coating] Since the light source of the exposure apparatus currently used is monochromatic light, an interference effect due to the exposure light is produced in the corrosion-resistant coating which is the resist film.
【0027】図3は、感光性被膜の露光光による干渉効
果の説明図である。この図において、A1 、A2 、A3
は感度の極大点、B1 、B2 、B3 は極小点、Tは周期
である。FIG. 3 is an illustration of the interference effect of the exposure light on the photosensitive film. In this figure, A 1 , A 2 , A 3
Is the maximum point of sensitivity, B 1 , B 2 and B 3 are minimum points, and T is the period.
【0028】この図に示されているように、感光性被膜
の膜厚が増大すると、その定義から当然であるが、感度
は単純増加する傾向を有する。そして、この増加する傾
向に干渉効果による、周期Tが(露光光波長λ)/2/
(感光性被膜の屈折率n)の周期的変動がバイアスとし
て乗ることになる。As shown in this figure, when the film thickness of the photosensitive film is increased, it is natural from the definition that the sensitivity tends to simply increase. The period T is (exposure light wavelength λ) / 2 /
The periodic fluctuation of (refractive index n of the photosensitive film) is used as a bias.
【0029】この図において、極大点である、感光性被
膜中で光の進行波と反射波が最も強く打ち消し合う
A1 、A2 、A3 の膜厚と、進行波と反射波が強め合う
極小点B 1 、B2 、B3 の膜厚の間の傾斜した領域に膜
厚を設定すると、その厚さが僅かでも変動すると、感度
は大きく変化するため、露光、現像後の耐蝕性被膜の幅
が著しく変化し、この耐蝕性被膜によって配線層を形成
する場合には、耐蝕性被膜の幅が狭くなって配線層の幅
が狭くなって高抵抗化したり、あるいは逆に、配線層の
幅が広くなって配線層間のショートを生じる恐れが大き
い。In this figure, the maximum value is the photosensitive coating.
The traveling wave and the reflected wave of light cancel each other most strongly in the film
A1, A2, A3Of the film thickness and the progressive wave and the reflected wave strengthen each other
Minimum point B 1, B2, B3Film in the sloping region between the film thickness of
If you set the thickness, even if the thickness fluctuates even slightly, the sensitivity
Changes significantly, so the width of the corrosion-resistant coating after exposure and development
Changes significantly, and a wiring layer is formed by this corrosion-resistant coating
If the width of the corrosion-resistant coating is reduced, the width of the wiring layer
Becomes narrower to increase the resistance, or conversely, the wiring layer
There is a great risk that the width will become wider and a short circuit between wiring layers will occur.
Yes.
【0030】したがって、極大点であるA1 、A2 、A
3 点、あるいは、極小点であるB1 、B2 、B3 に感光
性被膜の膜厚を設定することが望ましい。そこで、極大
点を膜厚として選択した場合と、極小点を膜厚として選
択した場合の利害を考える。Therefore, the maximum points A 1 , A 2 , A
It is desirable to set the film thickness of the photosensitive film at three points, or at the minimum points B 1 , B 2 , and B 3 . Therefore, consider the interests when the maximum point is selected as the film thickness and when the minimum point is selected as the film thickness.
【0031】1.膜厚をA点に選択したときの利害 a.この膜厚からずれた場合は露光がオーバー気味にな
るから、感光性被膜がポジである場合、膜厚が多少変動
して形成されても、耐蝕性被膜の露光、現像後の残が生
じないから、この耐蝕性被膜をマスクとしてエッチング
して配線層を形成したとき、間違っても配線パターンの
間がショートしないからシーケンステストで一応パスす
ることになる。1. Interests when film thickness is selected at point A a. If the film thickness deviates from this value, the exposure will be overexposed. Therefore, if the photosensitive film is positive, the corrosion-resistant film does not remain after exposure and development even if the film thickness is changed to some extent. Therefore, when the wiring layer is formed by etching using the corrosion-resistant coating as a mask, the wiring pattern is not short-circuited even if it is mistaken, and therefore the sequence test is passed.
【0032】配線パターンの一部にショートが生じなけ
れば、配線パターンの一部の幅が細くなったとしても回
路として致命的な障害とはならず、他の正常な回路を使
用することができる場合がある。 b.感光性被膜の膜厚に多少のバラツキがあっても、極
大値の左右はほぼ平坦であるから、感度が中心値から大
きくずれることがない。If a short circuit does not occur in a part of the wiring pattern, even if the width of a part of the wiring pattern becomes narrow, it does not cause a fatal failure in the circuit, and other normal circuits can be used. There are cases. b. Even if there is some variation in the film thickness of the photosensitive film, the sensitivity does not greatly deviate from the center value because the left and right of the maximum value are almost flat.
【0033】2.膜厚をB点に選択したときの利害 a.この点からずれた場合は露光量はアンダー気味にな
るから、露光不足になり、残がでやすく、配線層間がシ
ョートする危険性が増大する。 b.配線層間で短絡が生じると、回路の場所にもよる
が、回路全体の評価ができないため、短絡の場所を特定
することができず、その原因の探究も困難で、正常な回
路を使用することもできなくなる。結局、A点を選択す
るほうが有利であると結論できる。2. Interests when film thickness is selected at point B a. If it deviates from this point, the amount of exposure is likely to be underexposure, resulting in insufficient exposure, leaving more residue, and increasing the risk of short-circuiting between wiring layers. b. If a short circuit occurs between wiring layers, the entire circuit cannot be evaluated, depending on the location of the circuit, but the location of the short circuit cannot be identified, and it is difficult to find the cause of it. Use a normal circuit. Also can not be. After all, it can be concluded that it is more advantageous to choose point A.
【0034】本発明によると、このような干渉性による
影響をデータとして回転塗布装置に入力しておくことに
よってA点の膜厚に相当する感度を自動的に決定して最
適の厚さの感光性被膜を塗布することができる。According to the present invention, the sensitivity corresponding to the film thickness at the point A is automatically determined by inputting the influence of such coherence as data to the spin coater, and the exposure of the optimum thickness is performed. A protective coating can be applied.
【0035】(第5実施例) 〔感光性被膜塗布法〕基板の上に感光性被膜を塗布する
際には、通常回転塗布装置が用いられているが、この装
置を用いると、塗布被膜の厚さは、塗布塗料の性状と回
転基板の回転数によって決定される。(Fifth Embodiment) [Photosensitive film coating method] When a photosensitive film is coated on a substrate, a spin coating device is usually used. The thickness is determined by the properties of the applied paint and the rotation speed of the rotating substrate.
【0036】図4は、回転塗布装置の回転数と塗布被膜
の膜厚の関係の説明図である。すなわち、この図の例え
ば実線で示されるように、回転塗布装置の回転数と塗布
被膜の膜厚の間には一定の関係があるが、膜厚は感光性
被膜の感度と一定の関係を有するから、塗布被膜の膜厚
自体を求める必要はなく、所望の感光性被膜の感度を得
るための回転塗布装置の回転数を直接管理すればよいこ
とになる。FIG. 4 is an explanatory diagram of the relationship between the number of revolutions of the spin coater and the film thickness of the coating film. That is, as shown by the solid line in this figure, for example, there is a constant relationship between the rotational speed of the spin coater and the film thickness of the coating film, but the film thickness has a constant relationship with the sensitivity of the photosensitive film. Therefore, it is not necessary to calculate the film thickness itself of the coating film, and it is only necessary to directly control the rotation speed of the spin coating device for obtaining the desired sensitivity of the photosensitive film.
【0037】感光性塗料は、製造の際の製品ロットによ
って諸特性にばらつきがあるため、ロット毎に回転塗布
装置の回転数と膜厚の関係が図4中のaあるいはbのよ
うに微妙にシフトすることを避けることができない。Since various characteristics of the photosensitive coating vary depending on the product lot at the time of manufacturing, the relationship between the number of revolutions of the spin coater and the film thickness is delicate for each lot as shown by a or b in FIG. You cannot avoid shifting.
【0038】そこで、定期的に、ロット毎に回転数と膜
厚の関係の測定を行い、このデータを回転塗布装置に入
力することによって自動的に回転塗布装置を適切な回転
数で回転させることができる。Therefore, the relationship between the number of revolutions and the film thickness is periodically measured for each lot, and this data is input to the spin coater to automatically rotate the spin coater at an appropriate number of revolutions. You can
【0039】(第6実施例) 〔感光性被膜の現像の面内不均一性の測定法〕感光性被
膜が均一の厚さで塗布され、均一に露光されていても、
現像液の供給方法の不具合、温度の不均一性等現像条件
が何らかの原因で適切でなくなったために、感光性被膜
の露光、現像後の残存状態にむらが生じることがある。
本実施例は、そのような現像条件の面内不均一性を測定
する方法に関するものである。(Sixth Embodiment) [Method of measuring in-plane non-uniformity of development of photosensitive film] Even if the photosensitive film is applied in a uniform thickness and is uniformly exposed,
Since the developing conditions such as the supply method of the developing solution and the nonuniformity of the temperature are not appropriate for some reason, the photosensitive film may be uneven in the residual state after exposure and development.
The present embodiment relates to a method for measuring the in-plane non-uniformity of such developing conditions.
【0040】図5は、感光性被膜の現像条件の面内不均
一性の測定法の説明図である。この図において、7は基
板、8は現像後の感光性被膜である。FIG. 5 is an explanatory view of a method for measuring in-plane non-uniformity of developing conditions of the photosensitive film. In this figure, 7 is a substrate, and 8 is a photosensitive film after development.
【0041】この方法においては、先ず、テスト用基板
7に感光性被膜を均一な膜厚で塗布し、ステップ式投影
露光装置(ステッパ)によって同一の露光量で感光性被
膜上の複数の領域を露光した試料を用意しておき、これ
を、製造工程に適宜間隔をおいて挿入して現像した後、
感光性被膜の残存膜厚の状態を画像データに変換し、各
露光領域の輝度レベルとその分布から、現像条件の不均
一性を検出し、この現像工程によって製造している半導
体装置に対して許容できない現像むらが発生したことを
検知した場合は警報を発し、あるいは、現像装置の動作
を停止して保守点検を行うようにすることができる。In this method, first, a photosensitive film is applied to the test substrate 7 with a uniform film thickness, and a plurality of regions on the photosensitive film are applied with the same exposure amount by a step type projection exposure apparatus (stepper). Prepare an exposed sample, insert it in the manufacturing process at appropriate intervals and develop it,
The state of the remaining film thickness of the photosensitive film is converted into image data, and the unevenness of the development conditions is detected from the brightness level of each exposure area and its distribution, and the semiconductor device manufactured by this development process is detected. When the occurrence of unacceptable development unevenness is detected, an alarm may be issued, or the operation of the developing device may be stopped to perform maintenance and inspection.
【0042】この方法によると、露光、現像後のテスト
用基板7の感光性被膜の残存状態を、CCD等によって
画像データに変換し、得られた各領域の輝度信号を比較
することにより、現像条件のばらつきの幅を人手を介す
ることなく検出することができるから、許容限度を超え
る現像むらが発生したときは、迅速かつ自動的に上記の
適切な対応措置をとることができ、不良品の発生を最小
限度に抑制することができる。According to this method, the remaining state of the photosensitive film on the test substrate 7 after exposure and development is converted into image data by a CCD or the like, and the obtained luminance signals of the respective areas are compared to develop the image data. Since it is possible to detect the range of variation in conditions without human intervention, when development unevenness exceeding the allowable limit occurs, the appropriate countermeasures described above can be taken promptly and automatically. Occurrence can be suppressed to a minimum.
【0043】上記の説明は、テスト用基板を使用して現
像条件のむらの発生を検出する場合であったが、テスト
用試料を使用しないで、製造中の半導体基板上の感光性
被膜の残存状態を画像データに変換し、各領域内の輝度
を平均化することによって現像条件のむらを検出するこ
ともできる。In the above description, the test substrate was used to detect the occurrence of uneven development conditions. However, the test film was not used, and the state of the photosensitive film remaining on the semiconductor substrate during manufacture was not detected. It is also possible to detect unevenness in the developing conditions by converting the image data into image data and averaging the brightness in each area.
【0044】(第7実施例) 〔感光性被膜の現像条件の変動の測定法〕図6は、感光
性被膜の現像条件の変動の測定法の説明図である。この
図において、9、11、13、15はテスト用基板、1
0、12、14、16は残存した感光性被膜である。(Seventh Embodiment) [Measurement Method of Variation of Development Condition of Photosensitive Coating] FIG. 6 is an explanatory view of a measurement method of variation of development condition of the photosensitive coating. In this figure, 9, 11, 13, and 15 are test substrates, 1
0, 12, 14, and 16 are the remaining photosensitive films.
【0045】複数のテスト用基板に同じ膜厚の感光性被
膜を形成し、これらの感光性被膜の複数領域を例えば、
0.9Eth、1.0Eth、1.1Eth、1.3Ethと感
度E thに異なる係数を乗じた露光量で均一に露光した試
料を用意しておき、これを、製造工程に挿入して現像し
た後、感光性被膜の残存膜厚の状態を画像データに変換
し、複数領域の感光性被膜の一部が抜け始める露光量
(この例では露光量0.9Ethのとき2つの領域の感光
性被膜が抜けている。)と、全ての感光性被膜が完全に
抜ける露光量(この例では露光量1.3Ethのとき全て
の感光性被膜が抜けている。)の幅を決定する(この例
では1.3Eth−0.9Eth=0.4Ethである。)。Photosensitive coatings of the same thickness are applied to a plurality of test substrates.
A film is formed and multiple regions of these photosensitive coatings are
0.9Eth, 1.0Eth, 1.1Eth, 1.3EthFeeling
Degree E thOf uniform exposure with an exposure amount obtained by multiplying
Prepared, insert it into the manufacturing process and develop
After that, the state of the remaining film thickness of the photosensitive film is converted into image data.
And the amount of exposure at which a part of the photosensitive film in multiple areas begins to come off
(In this example, the exposure amount is 0.9EthIn the case of, exposure of two areas
The protective film is missing. ) And all photosensitive coatings are completely
Exposed exposure amount (in this example, exposure amount 1.3EthWhen everything
The photosensitive film of is missing. ) Width (this example
Then 1.3Eth-0.9Eth= 0.4EthIs. ).
【0046】このように感光性被膜の膜厚が均一で露光
量が各基板については均一であるにかかわらず現像むら
が生じ、あるいは時間的に変化する原因は、局部的な現
像むらによる実効的現像時間、あるいは、現像速度の不
均一性、および、それらの変動であり、感光性被膜が最
初に抜けてから全部が抜けるまでの露光量の幅から、配
線パターンの線幅のばらつきが推定できる。As described above, the cause of the uneven development or the temporal change regardless of the uniform film thickness of the photosensitive film and the uniform exposure amount of each substrate is that the uneven development is effective. Variations in the line width of the wiring pattern can be estimated from the non-uniformity of the development time or the development speed and their fluctuations, and the width of the exposure amount from the first removal of the photosensitive film to the complete removal thereof. ..
【0047】したがって、その現像条件が製造している
半導体装置に対して許容できる範囲であるか否かを判定
し、許容できない範囲に入った場合は、現像装置を停止
し、現像条件を点検、修正することによって、以後の不
良品の発生を抑制することができる。この場合、露光、
現像後の感光性被膜の残存状態を、画像処理による輝度
信号を用いて行うため、人手を介することなく迅速かつ
簡単に実行される。Therefore, it is judged whether or not the developing condition is within the allowable range for the semiconductor device being manufactured. If it is within the allowable range, the developing device is stopped and the developing condition is checked. By making the correction, it is possible to suppress the generation of defective products thereafter. In this case, the exposure,
Since the remaining state of the photosensitive film after development is performed by using the brightness signal by image processing, it can be executed quickly and easily without human intervention.
【0048】この実施例において、四角形の露光領域を
有するステップ式投影露光装置を使用して露光したの
は、画像データに変換するとき露光領域のエッジによっ
てパターン認識し易くするためであるが、基本的には、
基板全体を均一露光量でブランク露光することもでき、
この場合に感光性被膜が抜けた部分の面積を計算するこ
とにより、上記と同様の測定を行うことができる。In this embodiment, the exposure is carried out by using the step-type projection exposure apparatus having a square exposure area in order to facilitate pattern recognition by the edge of the exposure area when converting into image data. Specifically,
It is also possible to perform blank exposure with a uniform exposure amount on the entire substrate,
In this case, the same measurement as described above can be performed by calculating the area of the portion where the photosensitive film has fallen out.
【0049】上記の説明は、テスト用試料を使用して現
像条件のむらの発生を検出する場合であったが、テスト
用試料を使用しないで、製造中の半導体基板上の感光性
被膜の残存状態を画像データに変換し、各領域内の輝度
を平均化することによって現像条件の変動を検出するこ
ともできる。In the above description, the test sample was used to detect the occurrence of uneven development conditions. However, the test sample was not used, and the state of the photosensitive film remaining on the semiconductor substrate during manufacture remained. Can be converted into image data, and the luminance in each area can be averaged to detect variations in the developing conditions.
【0050】[0050]
【発明の効果】以上説明したように、本発明によれば、
感光性被膜の現像後の残存膜厚の状態を画像処理するこ
とにより感光性被膜の感度を自動的に測定し、この値を
もとにして、製造工程において適正な感光性被膜の塗
布、露光、現像を行うことが可能になり、また、感光性
被膜の現像後の残存状態を画像処理することにより現像
条件の変動やむらの程度を自動的に測定することがで
き、人為的な測定誤差を生じる余地をなくし、製造工程
における不良品の発生を抑制することができる。As described above, according to the present invention,
The sensitivity of the photosensitive film is automatically measured by performing image processing on the state of the remaining film thickness after development of the photosensitive film, and based on this value, appropriate coating and exposure of the photosensitive film in the manufacturing process. , It becomes possible to develop, and by processing the remaining state of the photosensitive film after development, it is possible to automatically measure the fluctuation of development conditions and the degree of unevenness. It is possible to prevent the occurrence of defective products and suppress the generation of defective products in the manufacturing process.
【図1】(A)〜(C)は本発明の第1実施例の感光性
被膜の感度測定法の説明図である。1A to 1C are explanatory views of a sensitivity measuring method of a photosensitive coating according to a first embodiment of the present invention.
【図2】(A)、(B)は本発明の第2実施例の感光性
被膜の感度測定法の説明図である。2 (A) and 2 (B) are explanatory views of a sensitivity measuring method for a photosensitive coating of a second embodiment of the present invention.
【図3】感光性被膜の露光光による干渉効果の説明図で
ある。FIG. 3 is an explanatory diagram of an interference effect due to exposure light of a photosensitive film.
【図4】回転塗布装置の回転数と塗布被膜の膜厚の関係
の説明図である。FIG. 4 is an explanatory diagram of the relationship between the number of rotations of a spin coating device and the film thickness of a coating film.
【図5】感光性被膜の現像条件の面内不均一性の測定法
の説明図である。FIG. 5 is an explanatory diagram of a method for measuring in-plane non-uniformity of developing conditions of a photosensitive film.
【図6】感光性被膜の現像条件の変動の測定法の説明図
である。FIG. 6 is an explanatory diagram of a method for measuring fluctuations in developing conditions of a photosensitive film.
1 感光性被膜が形成された基板 21 、22 、23 、24 、25、26 、27 、28 露
光領域 31 、32 、33 、34 、35、36 、37 、38 耐
蝕性被膜 4 画像データ形成領域1 Substrates on which a photosensitive film is formed 2 1 , 2 2 , 2 3 , 2 4 , 2 5 , 2 6 , 2 7 , 2 8 exposure areas 3 1 , 3 2 , 3 3 , 3 4 , 3 5 , 3 6 , 3 7 , 3 8 Corrosion resistant coating 4 Image data forming area
Claims (7)
の領域を異なる露光量で露光し、露光されたこの感光性
被膜を現像し、現像された感光性被膜の残存膜厚の状態
を位置と輝度信号からなる画像データに変換し、この画
像データと露光量データを情報処理することを特徴とす
る感光性被膜の感度測定法。1. A method of exposing a plurality of regions of a photosensitive coating formed on a substrate with different exposure amounts, developing the exposed photosensitive coating, and a state of residual film thickness of the developed photosensitive coating. Is a method for measuring the sensitivity of a photosensitive film, which comprises converting image data consisting of a position and a luminance signal and processing the image data and the exposure amount data.
で露光するとき、この複数の領域と特定の関係を有する
位置に位置検出マークを露光し、現像された感光性被膜
の残存膜厚の状態をこの位置検出マークを基準にして画
像データに変換することを特徴とする請求項1記載の感
光性被膜の感度測定法。2. A residual film thickness of a photosensitive film developed by exposing a position detection mark at a position having a specific relationship with the plurality of regions when exposing the plurality of regions of the photosensitive film with different exposure amounts. 2. The method for measuring the sensitivity of a photosensitive film according to claim 1, wherein said state is converted into image data based on this position detection mark.
の領域を異なる露光量で露光し、露光されたこの感光性
被膜を現像し、現像された感光性被膜の残存膜厚の状態
を位置と輝度信号からなる画像データに変換し、この画
像データと露光量データを情報処理することによって感
光性被膜の感度を測定し、その感度に所定の係数を乗じ
た値の露光量で製造工程における基板の上の感光性被膜
を露光することを特徴とする耐蝕性被膜の形成方法。3. A state of remaining film thickness of the developed photosensitive film by exposing a plurality of regions of the photosensitive film formed on a substrate with different exposure doses, developing the exposed photosensitive film, and developing the exposed photosensitive film. Is converted into image data consisting of position and brightness signals, and the sensitivity of the photosensitive film is measured by processing this image data and exposure amount data, and the sensitivity is multiplied by a predetermined coefficient to produce the exposure amount. A method for forming a corrosion resistant coating, which comprises exposing a photosensitive coating on a substrate in a step.
厚の感光性被膜を均一に塗布し、各膜厚の基板に対し
て、基板の上に塗布された感光性被膜の複数の領域を異
なる露光量で露光し、露光された感光性被膜を現像し、
現像された感光性被膜の残存膜厚の状態を位置と輝度信
号からなる画像データに変換し、この画像データと露光
量データを情報処理することによって各感光性被膜の感
度を測定し、感光性被膜の膜厚と感度の相関から、感光
性被膜の膜厚を測定する方法。4. A plurality of substrates are uniformly coated with photosensitive coatings having different film thicknesses, and a plurality of photosensitive coatings coated on the substrates are provided for the respective substrate thicknesses. Areas are exposed with different exposure doses and the exposed photosensitive coating is developed,
The sensitivity of each photosensitive film is measured by converting the state of the remaining film thickness of the developed photosensitive film into image data consisting of position and brightness signals, and processing this image data and exposure amount data to determine the sensitivity of each photosensitive film. A method for measuring the film thickness of a photosensitive film from the correlation between film thickness and sensitivity.
厚の感光性被膜を均一に塗布し、各膜厚の基板に対し
て、基板の上に塗布された感光性被膜の複数の領域を異
なる露光量で露光し、露光された感光性被膜を現像し、
現像された感光性被膜の残存膜厚の状態を位置と輝度信
号からなる画像データに変換し、この画像データと露光
量データを情報処理することによって感光性被膜の感度
を測定し、この測定した感光性被膜の干渉効果に基づい
て感光性被膜の塗布膜厚を補正する方法。5. A plurality of substrates are uniformly coated with photosensitive coatings having different film thicknesses between the substrates, and a plurality of photosensitive coatings coated on the substrates are provided for the respective substrate thicknesses. Areas are exposed with different exposure doses and the exposed photosensitive coating is developed,
The sensitivity of the photosensitive film was measured by converting the state of the residual film thickness of the developed photosensitive film into image data consisting of the position and the luminance signal, and processing this image data and exposure amount data. A method for correcting the coating film thickness of a photosensitive film based on the interference effect of the photosensitive film.
る領域を同一露光量で露光し、現像後の感光性被膜の残
存膜厚の状態を画像データに変換し、この画像データか
ら現像工程における感光性被膜の実効的現像時間あるい
は現像速度の均一性を測定する方法。6. A different area of a photosensitive film coated on a substrate is exposed with the same exposure amount, the state of the remaining film thickness of the photosensitive film after development is converted into image data, and the development is performed from this image data. A method for measuring the effective development time or the uniformity of the development speed of the photosensitive film in the process.
された感光性被膜の複数の領域を、各基板毎に異なる露
光量で均一に露光し、現像後の感光性被膜の残存膜厚の
状態を画像データに変換し、この画像データから、感光
性被膜の一部が溶解し始める露光量と全ての感光性被膜
が溶解する露光量を検出し、その露光量の差から現像工
程における感光性被膜の実効的現像時間あるいは現像速
度の変動状態を測定する方法。7. A plurality of regions of a photosensitive film uniformly applied on a plurality of substrates with the same thickness are uniformly exposed with different exposure amounts for each substrate, and the photosensitive film remains after development. The state of the film thickness is converted into image data, and from this image data, the exposure amount at which a part of the photosensitive film begins to dissolve and the exposure amount at which all the photosensitive film dissolves are detected, and development is performed from the difference in the exposure amount. A method for measuring the fluctuation state of the effective developing time or developing speed of the photosensitive film in the process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25738591A JPH05102031A (en) | 1991-10-04 | 1991-10-04 | Sensitivity measurement of photosensitive film, and formation of corrosion-resistant film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25738591A JPH05102031A (en) | 1991-10-04 | 1991-10-04 | Sensitivity measurement of photosensitive film, and formation of corrosion-resistant film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05102031A true JPH05102031A (en) | 1993-04-23 |
Family
ID=17305657
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25738591A Withdrawn JPH05102031A (en) | 1991-10-04 | 1991-10-04 | Sensitivity measurement of photosensitive film, and formation of corrosion-resistant film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05102031A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06333809A (en) * | 1993-05-20 | 1994-12-02 | Toshiba Corp | Device and method for resist sensitivity adjustment |
JP2002015992A (en) * | 2000-04-25 | 2002-01-18 | Nikon Corp | Lithographic process, evaluating method for lithography system, adjusting method for substrate-processing apparatus, lithography system, method and apparatus for exposure, and method for measuring condition of photosensitive material |
WO2002091440A1 (en) * | 2001-05-07 | 2002-11-14 | Nikon Corporation | Optical characteristic measuring method, exposure method, and device manufacturing method |
WO2004040625A1 (en) * | 2002-10-31 | 2004-05-13 | Hitachi, Ltd. | Exposure apparatus control method and device |
JP2005202226A (en) * | 2004-01-16 | 2005-07-28 | Fuji Photo Film Co Ltd | Method and apparatus for detecting sensitivity of photosensitive material, and exposure correction method |
WO2007132758A1 (en) * | 2006-05-17 | 2007-11-22 | Tokyo Electron Limited | Substrate treating method, program, computer-readable storage medium, and substrate treating system |
JP2020524816A (en) * | 2017-06-23 | 2020-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | Method, system, computer program product and computer program for determining effective dose consistency or uniformity of a lithographic tool |
-
1991
- 1991-10-04 JP JP25738591A patent/JPH05102031A/en not_active Withdrawn
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06333809A (en) * | 1993-05-20 | 1994-12-02 | Toshiba Corp | Device and method for resist sensitivity adjustment |
JP2002015992A (en) * | 2000-04-25 | 2002-01-18 | Nikon Corp | Lithographic process, evaluating method for lithography system, adjusting method for substrate-processing apparatus, lithography system, method and apparatus for exposure, and method for measuring condition of photosensitive material |
WO2002091440A1 (en) * | 2001-05-07 | 2002-11-14 | Nikon Corporation | Optical characteristic measuring method, exposure method, and device manufacturing method |
WO2004040625A1 (en) * | 2002-10-31 | 2004-05-13 | Hitachi, Ltd. | Exposure apparatus control method and device |
JP2005202226A (en) * | 2004-01-16 | 2005-07-28 | Fuji Photo Film Co Ltd | Method and apparatus for detecting sensitivity of photosensitive material, and exposure correction method |
WO2007132758A1 (en) * | 2006-05-17 | 2007-11-22 | Tokyo Electron Limited | Substrate treating method, program, computer-readable storage medium, and substrate treating system |
US7884950B2 (en) | 2006-05-17 | 2011-02-08 | Tokyo Electron Limited | Substrate processing method, program, computer-readable storage medium, and substrate processing system |
JP2020524816A (en) * | 2017-06-23 | 2020-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | Method, system, computer program product and computer program for determining effective dose consistency or uniformity of a lithographic tool |
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