TW527636B - Exposure method, exposure apparatus and manufacturing method of device - Google Patents

Exposure method, exposure apparatus and manufacturing method of device Download PDF

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Publication number
TW527636B
TW527636B TW090102123A TW90102123A TW527636B TW 527636 B TW527636 B TW 527636B TW 090102123 A TW090102123 A TW 090102123A TW 90102123 A TW90102123 A TW 90102123A TW 527636 B TW527636 B TW 527636B
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Taiwan
Prior art keywords
exposure
aforementioned
substrate
patent application
pattern
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TW090102123A
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Chinese (zh)
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Hiroo Okuno
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/706833—Sampling plan selection or optimisation, e.g. select or optimise the number, order or locations of measurements taken per die, workpiece, lot or batch
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Data Mining & Analysis (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

When a plurality of exposures are performed repeatedly on the same substrate, control factors, which are helpful to the efficiency increase, of the exposure system are changed according to the exposure accuracy required for each exposure. For example, when very high exposure accuracy is required, the control factors are changed into such states (or values) that resolution is more heavily weighted than the efficiency; and when the required exposure accuracy is not so high, the control factors are changed such that efficiency is more heavily weighted than the resolution. Therefore, when compared with the case where the exposure system is always controlled based on the same control factors, it is clear that production efficiency can be increased by this method. In addition, only when the required exposure accuracy is not high, the control factors are changed such that the production efficiency is more heavily weighted. Therefore, the exposure accuracy can be kept at a sufficiently high value.

Description

527636 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（/ ) [技術領域] 本發明係關於曝光方法及曝光裝置，以元件製造方法 ，更詳細的說，係關於製造半導體元件、液晶顯示元件等 時於微影步驟中所使用之曝光方法及曝光裝置’以及使用 該曝光裝置之元件製造方法。 [習知技術] 習知以微影步驟製造半導體元件或液晶顯示元件之場 合，雖使用各種曝光裝置，但目前一般係使用將光罩或檩 線板（以下，統稱「標線板」）之圖案，透過投影光學系統 複製於標面塗敷有光抗鈾劑之晶圓或玻璃板等之基板(以下 ，統稱「晶圓」）上之投影曝光裝置。 作爲此種投影曝光裝置，近年來，多使用步進•重複 (step & repeat)方式之縮小投影曝光裝置(所謂之步進器）、 以及將該步進器加以改良之步進•掃描(step & scan)方式之 投影曝光裝置，亦即被稱爲掃描步進器(scanning stepper)者 。掃描步進器，由於與步進器相較能以較小之光學系統對 大區域進行曝光，因此投影光學之製造容易，又，對投影 光學系統相對掃描標線板及晶圓而有平均化效果，因此亦 能期待提昇失真及焦點深度等優點。因此，被認爲今後此 種掃掃描步進器將會成爲主流。 近年來，隨著積體電路之高積體化’元件規格(實用最 小線寬)益發微細化，就投影曝光裝置而言，除效率之提昇 外，作爲重要之條件，亦要求解析度上限、焦點深度與線 寬控制精度之提升。 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------；—VI-----裝— c請先閱讀背面之注意事項再填寫本頁) J^T. •線_ 礞 527636 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明說明（y) 作爲提昇上述解圍上限之方法，對雙重曝光法不斷地 加以改良，將該雙重曝光法使用於KrF準分子雷射曝光裝 置或ArF準分子雷射曝光裝置，嘗試曝光至Ο.ίμιη之線與 間隙(L/S)。該雙重曝光法被期待解析度提升與焦點深度 提升之兩個效果。 上述雙重曝光等之多重曝光，由於主要是以提升解析 力爲目的而進行，因此過去已提出了若干有助於解析力提 升之條件，例如在第1次曝光時與第2次曝光時變更照明 條件等(例如，參照日本專利特開平4-273245)。 然而，其他條件，特別是關於對提升解析度無關之有 助於效率提升之條件，每次曝光皆係在同一條件下進行。 亦即，在被稱爲製程處理檔案之曝光條件設定用之一種數 據庫，僅設定一種各控制參數。因而，例如爲掃描步進器 之場合，標線板和晶片同步移動時之各個載台之掃描速度 、曝光照射間之步進速度、定位恢復時之容許位置誤差、 或作爲同步恢復之判斷基準的容許位置誤差等，在第1次 曝光與第2次曝光時，皆係以同一條件進行。 另一方面，進行雙重曝光時，就第1次曝光與第2次 曝光而言，每次曝光所要求之曝光精度未必相同。 即使如此，現有的投影曝光裝置，如上述般，由於無 論所要求之精度爲何，皆幾乎在相同之曝光條件下進行曝 光，因此即使在要求精度較低而較重視效率之曝光時，亦 係使用與要求精度高、須重視解析力之曝光時相同之控制 値來進行曝光。 4 C請先滅讀背面之注意事頊爲填寫本頁) 裝 . -線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（〉） 因此，截至目前，就雙重曝光而言，由於除了重視解 析力外，並無想要提升效率之想法，因此皆造成雙重曝光 時之效率較所需之標準爲低。 與上述相同之問題，亦產生於對同一晶圓之不同層進 行曝光之時。亦即，掃描速度、曝光照射間之步進速度、 定位恢復時之容許位置誤差、或作爲同步恢復之判斷基準 之容許位置誤差等，通常對各層之曝光係使用相同控制値 之故。又，例如對同一層上周邊部有部分重疊之複數個區 域分別進彳了曝光之接合方式(stitching)中，亦會產生與上述 同樣的問題。 [發明欲解決之課題] 本發明有鍵於上述情事，其第1目的在於，提供一種 能一邊維持高曝光精度、亦能提昇效率之曝光方法及曝光 裝置。 又’本發明之第2目的，係提供一種能提升高積體度 之微元件之生產性的元件製造方法。 根據本案之第1發明，提供一曝光方法，係對同—基 板至少反覆進行兩次曝光，其包含： 對應所要求之第1曝光精度、以第1控制精度對基板 進行第1曝光之步驟； 對應所要求之與前述第1曝光精度不同之第2曝光精 度、以第2控制精度對基板進行第2曝光之步驟。 根據此發明，例如，在所要求之曝光精度較嚴之曝光( 第1曝光及第2曝光中之一)時，設爲通常之控制精度，在 5 度 尺 張 紙 本 格 規 4 A -\—/ 5 N (C. 準 標 I公 i:97 t --------------裝--- (請先閱讀背面之注意事項再填寫本頁) 訂· 線· ^ 527636 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（f) 所要求之曝光精度並不特別高之曝光(第1曝光及第2曝光 中之另一方)時，則設成較通常略低之控制精度’以此方式 視每次曝光所要求之曝光精度，來變更控制精度。因此， 與每次皆以相同控制精度進行曝光之情形相較，能提昇效 率。又，針對曝光精度能維持充分精度。 此時，前述第1曝光與第2曝光(前述至少兩次之曝光 )不但能對前述基板之不同層進行曝光，亦能對前述基板之 同一層進行曝光。 若爲後者時，前述第1曝光與第2曝光，不但是能將 圖案接合複製於前述基板上鄰接之區劃區域的接合曝光， 且前述第1曝光與第2曝光，亦是將圖案重疊複製於前述 基板上同一區域之多重曝光。 本發明之曝光方法，可將前述第1曝光設爲對前述基 板進行之用以規定圖案尺寸之曝光，將前述第2曝光設爲 對前述基板進行之用以規定圖案形狀之曝光。 本說明書中，所謂「規定圖案尺寸」，係意味包含下 舍二種情形：以要求更爲微細之線圖案的精度進行解析來 規定圖案線寬之情形，以及，以要求更小之孔圖案、矩形 圖案等之精度進行解析來規定要求該等圖案尺寸之尺寸的 情形。 此時，可將前述第2控制精度設定得較第1控制精度 爲低。此種情形時，與一般用以規定要求解析力之圖案尺 寸的第1曝光之第1控制精度相較，用以規定不要求那麼 高之解析力之圖案形狀的第2曝光之第2控制精度，則設 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公爱） (請先閱讀背面之注意事項再填寫本頁) 裝 . -丨線· 527636 A7 B7 五、發明說明（Γ) --------------裝--- * > (請先閱讀背面之注意事項再填寫本頁) 定得較低。因此，與每次皆以相同之控制精度對同一基板 反覆進行包含上述第1、第2曝光之複數次曝光的情形相 較，能提昇效率。又，能維持足夠精度之曝光精度。 本發明之曝光方法，當前述第一曝光係用以規定對前 述基板進行之圖案大小爲目的的曝光，前述第2曝光係用 以規定對前述基板進行之圖案形狀爲目的的曝光時’第1 曝光與第2曝光可以是同一基板之不同層(layer)進行曝光 者，前述第1曝光與前述第2曝光亦可以是對前述基板之 同一層進行曝光者。 若爲後者時，前述第1曝光與第2曝光可以是將圖案 接合複製於前述基板上相鄰區域之接合曝光’前述第1 # 光與第2曝光亦可以是將圖案重疊複製於前述基板上同/ 區域之多重曝光。 - 丨線- 本發明之曝光方法中，前述控制精度可至少包含下歹 之一：將前述基板上之複數個區劃區域定位於既定之基# 位置時前述基板之移動狀態’前述定位時之位置誤差之@ 許値，形成有複製於前述基板之圖案的光罩與前述基板$ 相對位置對準精度’將前述光罩與基板同步移動於既定％ 向時之移動狀態’以及用以決定前述同步移動時之設走$ 經濟部智慧財產局員工消費合作社印製 許値。 本發明之第2發明，係一曝光裝置，其特徵在於’具527636 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (/) [Technical Field] The present invention relates to an exposure method and an exposure device, and an element manufacturing method. More specifically, it relates to the manufacture of semiconductor elements, A liquid crystal display element and the like are used in an lithography step, an exposure method and an exposure device ', and a device manufacturing method using the exposure device. [Known technology] Where semiconductor devices or liquid crystal display devices are manufactured by the lithography process, although various exposure devices are used, generally, a photomask or a reticle (hereinafter, collectively referred to as a "reticle") is currently used. The pattern is copied by a projection optical system to a projection exposure device on a substrate (hereinafter, collectively referred to as a "wafer") coated with a light-resistant anti-uranium agent on a standard surface or a glass plate. As such a projection exposure apparatus, in recent years, a step-and-repeat (step & repeat) reduction projection exposure apparatus (a so-called stepper) and a stepping-scanning method that improves the stepper ( step & scan) projection exposure device, also known as scanning stepper (scanning stepper). Scanning stepper, because it can expose a large area with a smaller optical system compared to a stepper, the manufacturing of projection optics is easy, and the projection optical system is averaged relative to the scanning reticle and wafer Effect, you can also expect to improve the advantages of distortion and depth of focus. Therefore, it is considered that such scanning and scanning steppers will become mainstream in the future. In recent years, with the increasing integration of integrated circuits' component specifications (minimum practical line width), miniaturization has become more and more important. As for projection exposure devices, in addition to improving efficiency, as an important condition, the upper resolution limit, Improved focus depth and line width control accuracy. 3 This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) ------; -VI ----- installation-c Please read the precautions on the back before filling this page) J ^ T. • Line_ 礞 527636 Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of invention (y) As a method to raise the upper limit of the siege, the double exposure method is continuously improved, and the double exposure method is used In a KrF excimer laser exposure device or an ArF excimer laser exposure device, try to expose to the line and gap (L / S) of 0. Ιμιη. This double exposure method is expected to have two effects of improving resolution and increasing depth of focus. The multiple exposures such as the double exposure mentioned above are mainly carried out for the purpose of improving the resolution. Therefore, in the past, a number of conditions have been proposed to help improve the resolution, such as changing the lighting during the first exposure and the second exposure. Conditions, etc. (for example, refer to Japanese Patent Laid-Open No. 4-273245). However, other conditions, especially those that have nothing to do with improving the resolution and help to improve efficiency, are performed under the same conditions for each exposure. That is, only one type of each control parameter is set in a database for setting exposure conditions called a process file. Therefore, for example, in the case of a scanning stepper, the scanning speed of each stage when the reticle and the wafer are moved synchronously, the stepping speed between exposure and irradiation, the allowable position error during positioning recovery, or as a reference for determining the synchronous recovery The allowable position error and the like are performed under the same conditions during the first exposure and the second exposure. On the other hand, when performing double exposure, the exposure accuracy required for each exposure may not be the same for the first exposure and the second exposure. Even so, the existing projection exposure devices, as described above, are used under almost the same exposure conditions regardless of the required accuracy, so they are used even when exposures requiring lower accuracy and more emphasis on efficiency are used. The exposure is performed with the same control as when exposure requiring high accuracy and attention to resolution is required. 4 C Please read the notes on the back first (for the purpose of filling out this page).-The size of the paper is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 527636 A7 B7 Employees ’Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Printed 5. Description of Invention (>) So far, as far as double exposure is concerned, in addition to focusing on analytical power, there is no idea of improving efficiency. Therefore, the efficiency of double exposure is higher than the required standard. low. The same problem as above is also caused when different layers of the same wafer are exposed. That is, the scanning speed, the step speed between exposure and irradiation, the allowable position error at the time of positioning restoration, or the allowable position error as a reference for synchronous restoration are usually the same control for the exposure of each layer. In addition, for example, in the stitching method of exposing a plurality of areas in which peripheral portions are partially overlapped on the same layer, the same problems as described above also occur. [Problems to be Solved by the Invention] The present invention is based on the above-mentioned circumstances. A first object of the present invention is to provide an exposure method and an exposure apparatus that can maintain high exposure accuracy and improve efficiency. A second object of the present invention is to provide a device manufacturing method capable of improving the productivity of a micro device having a high integration density. According to the first invention of the present case, an exposure method is provided, in which the same substrate is repeatedly exposed at least twice, which includes: a step of performing a first exposure on the substrate with a first control accuracy corresponding to the required first exposure accuracy; Corresponding to the required second exposure accuracy different from the aforementioned first exposure accuracy, and performing a second exposure on the substrate with the second control accuracy. According to this invention, for example, when the required exposure accuracy is relatively strict (one of the first exposure and the second exposure), the normal control accuracy is set, and the paper rule is 4 A on a 5-degree rule. / 5 N (C. Standard I: i t: 97 t -------------- install --- (Please read the precautions on the back before filling this page) Order · Thread · ^ 527636 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (f) Exposures that require an exposure accuracy that is not particularly high (the other of the 1st exposure and the 2nd exposure). Generally, the control accuracy is slightly lower. In this way, the control accuracy is changed depending on the exposure accuracy required for each exposure. Therefore, the efficiency can be improved compared with the case where the exposure is performed with the same control accuracy every time. The accuracy can maintain sufficient accuracy. At this time, the first exposure and the second exposure (the at least two exposures described above) can not only expose different layers of the substrate, but also expose the same layer of the substrate. If it is the latter At this time, the first exposure and the second exposure can not only bond and copy the patterns. The joint exposure of adjacent divided areas on the substrate, and the first exposure and the second exposure are multiple exposures in which the pattern is overlapped and copied on the same area on the substrate. The exposure method of the present invention can set the first exposure In order to perform the exposure for specifying the pattern size on the substrate, the second exposure is set to the exposure for specifying the pattern shape on the substrate. In the present specification, the "predetermined pattern size" means to include undercuts. Two cases: the case where the pattern line width is specified by the analysis that requires a finer line pattern accuracy, and the case that the smaller hole patterns, rectangular patterns, etc. are required to determine the size of those pattern sizes In this case, the aforementioned second control accuracy can be set lower than the first control accuracy. In this case, it is compared with the first control accuracy of the first exposure, which is generally used to specify the pattern size that requires resolution. , Used to specify the second control accuracy of the second exposure of the pattern shape that does not require such a high resolution, then set 6 paper standards for China Standard (CNS) A4 specification (210 x 297 public love) (Please read the precautions on the back before filling this page).-丨 Line · 527636 A7 B7 V. Description of Invention (Γ) -------- ------ Install --- * > (Please read the precautions on the back before filling out this page) The setting is low. Therefore, the same control accuracy is repeatedly applied to the same substrate every time including the above 1. Compared with the case of multiple exposures of the second exposure, the efficiency can be improved. Moreover, the exposure accuracy can be maintained with sufficient accuracy. In the exposure method of the present invention, when the first exposure is used to specify the pattern size of the substrate For the purpose of exposure, the second exposure is used to specify the pattern shape of the substrate. The first exposure and the second exposure may be performed on different layers of the same substrate. The exposure and the second exposure may be performed by exposing the same layer of the substrate. In the latter case, the first exposure and the second exposure may be a joint exposure in which a pattern is bonded and copied to an adjacent area on the substrate. The aforementioned first #light and second exposure may also be a pattern in which the pattern is overlapped and copied on the substrate. Multiple exposures in the same area. -丨 Line-In the exposure method of the present invention, the aforementioned control accuracy may include at least one of the following: positioning the plurality of divisional regions on the aforementioned substrate at a predetermined base # position when the aforementioned substrate is in a 'moved state' position during the aforementioned positioning The relative accuracy of the relative position alignment between the mask and the substrate formed with the pattern copied on the aforementioned substrate, and the accuracy of 'moving the aforementioned mask and substrate synchronously at a predetermined% direction', and to determine the aforementioned synchronization Set up when moving $ Printed by Xu Ye from the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. A second invention of the present invention is an exposure apparatus characterized by

HrL· · 備· 曝光系統，係將能量束照射於形成有圖案之光罩’ Η 將前述光罩之圖案複製於基板載台所保持之基板； 7 ^紙張尺國家標準（CNS)A4規格（210 X 297公釐） 527636 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（(？） 控制系統，係用以整體的控制前述曝光系統’且在對 同一基板重複進行至少二次曝光時’視每次曝光所要求之 曝光精度，變更有助於效率之前述曝光系統之控制因素。 根據此發明，由於控制系統對同一基板重複進行至少 二次曝光時，視每次曝光所要求之曝光精度’變更有助於 效率之前述曝光系統之控制因素(以下’適當地以「效率控 制因素」稱之），例如，要求之曝光精度係較嚴格之曝光時 ，成爲解析力較效率受重視之狀態（或値），若要求之曝光 精度係不那麼高之曝光時，相反地’成爲效率較解析力受 重視之狀態（或値），以此方式變更效率控制因素。因而’ 對同一基板重覆進行複數次曝光時，與每次曝光皆根據相 同效率控制因素控制曝光系統之情形相較，明顯地可提昇 效率。又，此時，由於對所要求之曝光精度係不那麼高之 曝光，換言之，僅在對容許某種程度降低曝光精度時，以 較重視效率之狀態（或値）的方式變更效率控制因素，因此 結果來說，即能維持充分之精度。 此情形中，控制系統在對同一基板之不同層進行曝光 時，可視各層曝光所要求之曝光精度，變更有助於效率之 前述曝光系統之控制因素（效率控制因素），且控制系統在 對同一基板同一層至少進行二次曝光時，亦可視每次曝光 所要求之曝光精度來變更效率控制因素。 若爲後者時，控制系統可控制曝光系統，對同一基板 之同一層進行至少二次曝光，以進行將圖案接合複製於基 板上之相鄰區域的接合曝光，控制系統亦可控制曝光系統 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------裝--------訂---------線---------- . > - > (請先間讀背面之注意事頊再填寫本頁) 527636 A7 B7 五、發明說明) ，對同一基板之同一層進行至少二次曝光，以進行將圖案 重疊複製於前述基板上之同一區域的多重曝光。 (請先閱讀背面之注意事項再填寫本頁) 若爲後者時，前述控制系統能控制前述曝光系統’以 進行至少包含對同一基板之用以規定圖案尺寸之第1次曝 光、與用以規定圖案形狀之第2次曝光的前述多重曝光。 一般來說，用以規定圖案尺寸之第1次曝光，其要求 之曝光精度嚴格，而用以規定圖案形狀之第2次曝光’其 要求之曝光精度並不那麼嚴格。因此，此時，控制系統係 變更效率控制因素，以使第1次曝光成爲較效率更爲重視 解析力之狀態，使第2次曝光成爲較解析力更爲重視效率 之狀態。又，本發明中第1曝光與第2曝光之順序相反亦 可。亦即，亦可以第1曝光規定圖案形狀，以第2曝光規 定圖案尺寸。 本發明之曝光裝置，在以前述控制系統變更之前述控 制因素中，可至少包含於既定之基準位置依序定位前述基 板上之複數個區劃區域時，前述基板載台之移動狀態與前 述定位時之位置誤差容許値中的至少一方。 經濟部智慧財產局員工消費合作社印製 此處，所謂之「於既定之基準位置依序定位前述基板 上之複數個區劃區域時」，包含下列二者：步進重複方式 曝光裝置中於曝光照射間步進時對曝光位置之各曝光照射 之定位，以及步進掃描方式曝光裝置中用以進行各曝光照 射之曝光時對掃描開始位置之各曝光照射之定位。又，所 謂之「基板載台之移動狀態」，則包含速度、加速度二者 〇 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 527636 A7 B7 五、發明說明（（f) 若加快於既定之基準位置依序定位前述基板上之複數 個區劃區域時的基板載台移動速度，亦即、加快曝光照射 間步進速度的話，即能縮短該加快速度份之基板曝光處理 所需時間（曝光處理時間）。但是，提昇步進速度時，由於 係在有限之距離(曝光照射間距離）以更高的速度移動，因 此加減速度之絕對値變大，使得定位時之震動變大。是以 ，其定位完成的時間（定位完成時間）必然會變長。是故， 考慮因步進速度提昇所帶來之曝光處理時間的縮短與定位 完成時間的增加，而將基板載台之移動狀態變更至能提昇 整體效率之程度是非常重要的。 又，若加大定位時之位置誤差容許値的話，由於能在 短時間內完成定位狀態，而能$快的開始下一動作(例如曝 光動作），因此藉整體曝光處理時間之縮短，能提昇效率。 又，若提昇步進速度的話，雖然定位時之震動會變大 ，但根據步進速度之提昇加大定位容許値，即能不增加定 位完成時間，而縮短曝光處理時間。 本發明之曝光裝置中，當前述曝光系統具備將自前述 光罩射出之前述能量束投射於前述基板上之投影光學系統 時，以前述控制系統變更之前述控制因素中，亦可設定爲 包含前述各次曝光時之焦點偏差之容許値。 例如，在所要求之曝光精度較嚴格時，曝光時容許之 焦點偏差量變得非常小，但若所要求之曝光精度較低的話 ，曝光時容許之焦點偏差量即使某種程度變得較大亦幾乎 沒有影響。因此，控制系統在所要求之曝光精度較嚴時， 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297_公釐） ^ ^ -------------裝--------訂---------線 m V (請先閱讀背面之注意事項再填寫本頁) 527636 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（γ) 根據所要求之程度縮小曝光時焦點偏差之容許値’而在所 要求之曝光精度不那麼嚴時，即將曝光時焦點偏差之容許 値設定的較大。此結果，與前者相較，後者之焦點捕捉時 間變短，無論所要求之曝光精度如何’與將曝光時焦點偏 差之容許値設定爲固定之情形相較，可縮短曝光處理時間 。此時，能充分維持曝光精度。 本發明之曝光裝置，當前述曝光系統具備脈衝雷射光 源來作爲射出前述能量束之能量束源時’以前述控制系統 變更之前述控制因素，可設定成包含前述各曝光時自前述 脈衝雷射光源射出、照射於則述基板之脈衝先的目b里強度 及重複頻率中之至少一者。 此處，所謂之「能量強度」，包含：每一單位時間於 基板上每一單位面積照射之能量與每一脈衝之能量兩者。 因此，能量強度之變更中，包含基板上照度之變更、以及 脈衝能量強度之不均現象容許値之變更兩者° 若增強照射在基板上之能量束強度(基板上之照度）的 話，由於能縮短該份量之對基板的曝光時間’因此能因曝 光處理時間之短縮提昇效率。該照射在基板之能量束強度 之增加，除了增加能量束源之每一脈衝之能量値、或變更 能量束源與基板間光路中之減光元件之減光率等方法外， 亦能藉由變更例如、自輪帶照明、變形照明等至通常照明 的照明條件，而輕易的加以實現。不過，在要求解析力之 曝光時，最好是能在變形照明等照射於光罩之能量束的強 度，較通常照明爲弱之照明條件下進行曝光。 - 11 - 本紙張尺度適用中國國家標準（CNS)A4 ^格（210 X 297公釐) ·， ； i i ^^1 I I n ϋ n n n I— I · n a·— n Bn 一 0、> n I ϋ I ϋ ϋ n I i ,· r 口 V (請先閱讀背面之注意事項再填寫本頁) 527636HrL · ···· Exposure system, which irradiates the energy beam onto the patterned mask 'Η The pattern of the aforementioned mask is copied to the substrate held by the substrate stage; 7 ^ Paper rule national standard (CNS) A4 specification (210 X 297 mm) 527636 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention ((?) Control system is used for overall control of the aforementioned exposure system 'and repeats at least two exposures on the same substrate According to the invention, when the control system repeatedly performs at least two exposures on the same substrate, it depends on what is required for each exposure. "Exposure accuracy" changes the control factors of the aforementioned exposure system that contribute to efficiency (hereafter "appropriately referred to as" efficiency control factors "). For example, when the required exposure accuracy is a stricter exposure, the resolution becomes more important and the efficiency is valued. In the state (or ，), if the required exposure accuracy is not so high, it will conversely become a situation where efficiency is more important than resolution. (Or 値), changing the efficiency control factor in this way. Therefore, when multiple exposures are repeatedly performed on the same substrate, the efficiency can be significantly improved compared with the case where the exposure system is controlled based on the same efficiency control factor for each exposure. Also, at this time, since the required exposure accuracy is not so high, in other words, the efficiency control factor is changed in a state (or 値) where efficiency is more important only when the exposure accuracy is allowed to decrease to a certain degree, Therefore, as a result, sufficient accuracy can be maintained. In this case, when the control system exposes different layers of the same substrate, depending on the exposure accuracy required for the exposure of each layer, the control factors of the aforementioned exposure system that contribute to efficiency can be changed. (Efficiency control factor), and when the control system performs at least two exposures on the same layer of the same substrate, the efficiency control factor can be changed according to the exposure accuracy required for each exposure. In the latter case, the control system can control the exposure system, At least two exposures to the same layer of the same substrate to copy the pattern to the substrate The joint exposure of adjacent areas can also be controlled by the control system. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------- pack- ------- Order --------- Line ----------. ≫-> (Please read the notes on the back first, and then fill out this page) 527636 A7 B7 V. Description of the invention), at least two exposures are performed on the same layer of the same substrate, so as to perform multiple exposures in which the pattern is superimposed and copied on the same area on the aforementioned substrate. (Please read the precautions on the back before filling this page) In the latter case, the aforementioned control system can control the aforementioned exposure system 'to perform at least the first exposure on the same substrate to specify the pattern size, and to specify The multiple exposures of the second exposure of the pattern shape. In general, the first exposure used to specify the size of a pattern requires strict exposure accuracy, while the second exposure used to specify the shape of a pattern 'requires less precise exposure. Therefore, at this time, the control system changes the efficiency control factor so that the first exposure becomes a state where the resolution is more important than efficiency, and the second exposure becomes a state where the efficiency is more important than resolution. In the present invention, the order of the first exposure and the second exposure may be reversed. That is, the pattern shape may be specified in the first exposure and the pattern size may be specified in the second exposure. The exposure device of the present invention may include at least a predetermined reference position for sequentially positioning a plurality of divided areas on the substrate in the aforementioned control factors changed by the aforementioned control system, the movement state of the substrate stage and the aforementioned positioning The position error allows at least one of the two. Printed here by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the so-called "when sequentially positioning a plurality of divisional areas on the aforementioned substrate at a predetermined reference position" includes the following two: a step-and-repeat exposure device in exposure exposure Positioning of each exposure irradiation of the exposure position during the time step, and positioning of each exposure irradiation of the scan start position in the exposure device of the step scanning method for performing exposure of each exposure irradiation. In addition, the so-called "moving state of the substrate stage" includes both speed and acceleration. 9 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 527636 A7 B7 V. Description of the invention ((f) If the substrate stage movement speed is accelerated when sequentially positioning the plurality of division areas on the substrate at a predetermined reference position, that is, if the step speed between exposure and irradiation is accelerated, That is, the time required for the substrate exposure processing (exposure processing time) can be shortened. However, when the stepping speed is increased, it moves at a higher speed within a limited distance (distance between exposure and irradiation), so the speed is increased or decreased. The absolute value becomes larger, making the vibration larger during positioning. Therefore, the positioning completion time (positioning completion time) will inevitably become longer. Therefore, it is considered to reduce the exposure processing time caused by the step speed increase. And positioning completion time increase, it is very important to change the movement state of the substrate stage to a level that can improve the overall efficiency. If the position error during large positioning is allowable, because the positioning can be completed in a short time, and the next action (such as exposure action) can be started quickly, the overall exposure processing time can be shortened to improve efficiency. If the step speed is increased, although the vibration during positioning will increase, increasing the positioning allowance according to the increase of the step speed can shorten the exposure processing time without increasing the positioning completion time. In the exposure device of the present invention, When the exposure system includes a projection optical system that projects the energy beam emitted from the photomask onto the substrate, the control factors changed by the control system may be set to include a focus deviation at each exposure. For example, when the required exposure accuracy is strict, the allowable focus deviation amount during exposure becomes very small, but if the required exposure precision is low, the allowable focus deviation amount during exposure changes to some extent. Larger with little effect. Therefore, when the required exposure accuracy is strict, the control system Degree applies to China National Standard (CNS) A4 specification (210 X 297_mm) ^ ^ ------------- installation -------- order ------- --Line m V (Please read the notes on the back before filling this page) 527636 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (γ) Reduce the allowable focus deviation during exposure according to the required degree値 'When the required exposure accuracy is not so strict, the allowable focus deviation at the time of exposure is set to be large. As a result, compared with the former, the latter has a shorter focus capture time, regardless of the required exposure accuracy 'Compared with the case where the allowable focus deviation at the time of exposure is set to be fixed, the exposure processing time can be shortened. At this time, the exposure accuracy can be fully maintained. In the exposure apparatus of the present invention, when the aforementioned exposure system is provided with a pulsed laser light source as a When the energy beam source of the aforementioned energy beam is emitted, the aforementioned control factors changed by the aforementioned control system can be set to include the intensity and the intensity of the target b before the pulse emitted from the aforementioned pulsed laser light source at each of the aforementioned exposures and irradiated on the substrate. Up to One less. Here, the so-called "energy intensity" includes both the energy irradiated on each unit area of the substrate per unit time and the energy of each pulse. Therefore, the change of energy intensity includes both the change of the illuminance on the substrate and the variation of the pulse energy intensity, which allows the change of 値. If the intensity of the energy beam irradiated on the substrate (irradiance on the substrate) is increased, Shortening the exposure time to the substrate by this amount can therefore improve efficiency due to the shortening of the exposure processing time. In addition to increasing the intensity of the energy beam irradiated on the substrate, in addition to methods such as increasing the energy of each pulse of the energy beam source, or changing the light reduction rate of the light reduction element in the optical path between the energy beam source and the substrate, it can also be achieved by For example, it is easy to change the lighting conditions such as belt lighting, deformed lighting, etc. to normal lighting. However, when the resolution is required for exposure, it is preferable to perform the exposure under an illumination condition where the intensity of the energy beam irradiated to the mask, such as anamorphic illumination, is weaker than that of ordinary illumination. -11-This paper size applies Chinese National Standard (CNS) A4 ^ grid (210 X 297 mm) ·,; ii ^^ 1 II n ϋ nnn I— I · na · — n Bn a 0, > n I ϋ I ϋ ϋ n I i, · r 口 V (Please read the precautions on the back before filling this page) 527636

經濟部智慧財產局員工消費合作社印製 五、發明說明（ίυ) 又，根據所要求之曝光精度’脈衝光之能量強度不均 現象之容許値不同。若脈衝光之能量強度不均現象大的話 ，即能縮短該份量之調整時間。又’當重複頻率變高時’ 功率亦隨之增大，而需要進行再測量，但所要求之曝光精 度較低的話，即使省略前述再測量亦無防礙。因此’藉由 再測量之省略、與提高重複頻率所帶來的功率之增大’能 縮短曝光時間。 本發明之曝光裝置，在以前述控制系統變更之前述控 制因素中，可包含前述光罩與前述基板之相對位置對準精 度。此情形中，控制系統在所要求之曝光精度較嚴時’亦 隨之嚴格要求光罩與基板之相對位置對準精度’而在所要 求之曝光精度不那麼嚴時’亦隨之降低光罩與基板之相對 位置對準精度。因此，與隨時嚴格要求光罩與基板之相對 位置對準精度之情形相較，能縮短包含光罩與基板之相對 位置對準之曝光處理整體所需時間。 此處，光罩與基板之相對位置對準精度之變更’包含 起因於光罩之校準、起因於基板之校準等，凡最後造成光 罩與基板之相對位置校準精度變更者，無論係因任何方法 造成皆包含在內。 此時，以前述控制系統變更之前述控制因素，可設爲 標線板校準或基板校準之模式。或者，以前述控制系統變 更之前述控制因素，可設爲前述基板校準時之取樣照射數 或取樣標誌數。又，以前述控制系統變更之前述控制因素 ，可設爲前述光罩校準時之取樣標誌數。 12 -------------裝--------訂---------線 * V (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 A7 B7 五、發明說明（"） (請先閱讀背面之注意事項再填寫本頁) 本發明之曝光裝置，當前述曝光系統具備用以保持前 述光罩之光罩載台，與同步驅動裝置(係在前述每次曝光時 ，相對前述能量束將前述光罩載台與前述基板載台同步驅 動於既定方向）時，以前述控制系統變更之前述控制因素中 ，可設爲至少包含下列之一：前述各次曝光時前述兩載台 之移動狀態及視該移動狀態照射於前述基板之前述能量束 的強度，與用以決定前述兩載台之同步完成之位置誤差的 容許値。 若增加曝光時光罩載台與基板載台之移動速度(掃描速 度），明顯的曝光時間（掃描曝光時間)會縮短。但是，此時 ，須視掃描速度之增加來加大照射於基板之能量束之強度( 照度），以將基板面之累計能量(累計曝光量)保持於目標値 。此時，可擴大基板上能量束之掃描方向的寬度，或增大 能量束之振盪頻率(重複頻率）。亦即，只要變更能量束之 強度、寬度及振盪頻率中之至少一者即可。 經濟部智慧財產局員工消費合作社印製 又，當增大用以決定光罩載台與基板載台之同步完成 之位置誤差的容許値時，由於能在更短時間內成爲同步完 成狀態，而能提早開始下一曝光動作，因此藉全體曝光時 間之縮短，而能提昇效率。 又，在增加掃描速度時，由於通常光罩載台之移動行 程受到限制而必須加大掃描前後之加減速度，因此同步完 成時間變長。此時，因應掃描速度之增加來加大用以決定 同步完成之位置誤差的容許値，即能不增加同步完成時間 ，縮短曝光處理時間。 13 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 A7 ---- B7 五、發明說明“ l) 本發明之曝光裝置，雖然能製作複雜的曝光處理程式( 軟體)(包含視所要求之曝光精度，在每次曝光時根據自行 判斷’來變更前述控制因素之判斷程式），將此程式加入前 述控制系統中，但在前述控制系統具有處理程式檔案(係設 定有用以進行前述曝光系統之控制的各種參數)時，前述處 理程式檔案中，能個別設定用以進行前述各次曝光之參數 値。此種情形時，係由操作員預先於處理程式檔案中個別 設定各次曝光所使用之各種參數値，控制系統根據該處理 程式檔案進行曝光系統之控制，視所要求之曝光精度，於 每次曝光時進行上述控制因素之變更。因此，不需重新作 成如上述之複雜的曝光處理程式，以現有處理程式檔案之 簡單變更即足以應付。 又，微影步驟中，藉使用本發明之曝光方法，一邊充 分維持曝光精度，一邊提昇效率進行曝光。因此，不至降 低具有微細圖案之微元件的良率，而能提昇效率進而提昇 生產性。同樣的，於微影步驟中，藉使用本發明之曝光裝 置來進行曝光，即能一邊充分維持曝光精度，一邊提昇效 率進行曝光。因此，不至降低具有微細圖案之微元件的良 率，而能提昇效率進而提昇生產性。承上所述，本案之另 一發明，係提供一使用本發明之曝光方法或曝光裝置之任 一者的元件製造方法。 [圖式之簡單說明] 圖1，係槪略的顯示本發明一實施例之曝光裝置構成 的圖。 14 ^紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 言 r 經濟部智慧財產局員工消費合作社印製 527636 A7 ___ B7 五、發明說明（（〉） 圖2,係將曝光照射間步進時之晶圓載台之速度變化 ，以低速步進(a)及高速步進(b)之對比加以顯示的圖。 圖3A，係顯示對應圖2中⑷之情形時，減速終了後相 對目標値之位置誤差的圖。 圖3B，係顯示對應圖2中(b)之情形時，減速終了後相 對目標値之位置誤差的圖。 圖4,係用以說明製造本發明之元件之製造方法之實 施例的圖。 圖5，係顯示圖4之步驟204之處理的流程圖。 -------------04^ --- * 4 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 [符號說明] 1 光源 2 照度均一化光學系統 3、6 中繼透鏡 5A 固定標線板遮板 5B 可動標線板遮板 7 彎曲鏡 8 聚光透鏡 10 處理室 11 標線板驅動部 13 照射光學系統 14 受光光學系統 15 移動鏡 16 標線板雷射干擾儀 19 載台控制系統 15 言 r 幺、v> 良 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） 527636 A7 B7 |發明說明（丨 20 主控制裝置 21 晶圓驅動部 25 晶圓保持具 30 輸入出裝置 31 晶圓雷射干擾儀 100 曝光裝置 102 曝光系統 PL 投影光學系統 RST 標線板載台 WST 晶圓載台 [較佳實施例之詳細說明] 以下，根據圖1 〜圖3說明本發明之一實施例。 圖1，係顯示本發明一實施例之曝光裝置100的槪略 構成。該曝光裝置： ί00，係步進掃描方式之掃描型曝光裝 置，亦即係所謂之掃描步進器。 該曝光裝置100 ，係由將能量束1L照射於形成有圖案 之作爲光罩之標線板R、透過投影光學系統PL將該標線板 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 R之圖案複製於作爲基板之晶圓W上的曝光系統102，與 作爲整體控制該曝光系統102之控制系統的主控制裝置20 的二部分所構成。 曝光系統102，具備：作爲能量束源之ArF準分子雷 射光源（193nm)、KrF準分子雷射光源(波長248mn)、或F2 雷射光源(波長157nm)等之脈衝雷射光源(以下，稱爲「光 源」）1，與該光源1 —起構成照明系統之照明光學系統(2 16 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 A7 B7 五、發明說明（if) 、3、5〜8)，用以保持以來自照明系統之能量束（以下，稱 爲「曝光光」）IL所照射之標線板R的標線板載台RST(作 爲光罩載台），將自標線板R射出之曝光光IL投射於晶圓 W上之投影光學系統PL，保持晶圓W移動於XY二維方向 之晶圓載台WST(作爲基板載台），以及收納除了光源1以 外之上述各構成之處理室10。 前述光源1，實際上，係配置在與設置處理室10之無 塵室不同的另一潔淨度較低之服務室中(前述處理室10，係 用以收納照明光學系統之各構成要素及由標線板載台RST 、投影光學系統PL、以及晶圓載台WST等所構成之曝光 裝置本體），透過未圖示之送光光學系統連接於該處理室10 。又，作爲光源，亦可使用來自超高壓水銀燈之紫外線帶 之明線(g線、i線等）、銅蒸氣售射及YAG雷射之高諧波產 生裝置等。 光源1，具有雷射振盪器、能量監視器、能量控制器 及高壓電源等（皆省略其圖示）。能量監視器，係監視從雷 射振盪器射出之脈衝光的光學特性。能量控制器，在通常 之發光時，係以能量監視器之輸出成爲對應於主控制裝置 20賦予每一脈衝之能量目標値的方式，對高壓電源之電源 電壓進行回饋控制。又，能量控制器，亦透過高壓電源控 制供給至雷射控制器之能量來變更振盪頻率(重複反覆頻率 )。亦即，能量控制器，視來自主控制裝置20之控制資訊 將光源1之振盪頻率設定在主控制裝置20所指示之頻率， 且使光源1之每一 1脈衝之能量強度成爲主控制裝置20所 17 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 言 Γ 經濟部智慧財產局員工消費合作社印製 527636 A7 ----- B7 五、發^說明（$) 指示之値般(亦即能量強度之不均現象之容許値範圍內之値 )’進行高壓電源之電源電壓之回饋控制。此一細節，揭示 於例如特開平8-250402號公報及與此對應之美國專利第 5728495號等中。此處，引用上述美國專利之揭示作爲本說 明書之部分記載。 又’光源1內，亦配置有根據來自於主控制裝置20之 控制資訊’用以將曝光光IL遮光用之快門。 前述照明光學系統，包含有：照度均一化光學系統2 、中繼透鏡3、標線遮板5、中繼透鏡6、彎曲鏡7以及聚 光透鏡8等。 前述照度均一化光學系統2，例如係由曝光光IL之光 路上依序配置之光束整形光學系統、能量粗調器、作爲光 學積分器之複眼透鏡以及照明.系統孔徑光闌板等(皆未圖示 )所構成。進一步詳予說明之，光束線整形光學系統，係將 由光源1脈衝發光、射入之曝光光IL之截面形狀，整形成 能效率良好地射入光路後方所設之複眼微透者，例如係由 柱狀透鏡或光束擴大器等所構成。 又’能量粗調器，係配置在光束整形光學系統後方之 曝光光IL之光路上，例如能將穿透率(=1_減光率)從丨⑻％ 以等比級數進行複數階段之切換者。此能量粗調器穿透率 之切換，係透過未圖示之驅動裝置以主控制裝置2〇加以進 行。 前述複眼透鏡，係配置在自能量粗調器出來之曝光光 IL的光路上，爲了以均一照度分布照明標線板r，而在其 18 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----------------- * 嗰 (請先閱讀背面之注意事項再填寫本頁) 言Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of Invention (ίυ) In addition, according to the required exposure accuracy, the unevenness of the energy intensity of the pulse light is different. If the uneven energy intensity of the pulsed light is large, the adjustment time of the amount can be shortened. Also, when the repetition frequency becomes higher, the power also increases, and re-measurement is required, but if the required exposure accuracy is low, even if the re-measurement is omitted, there is no problem. Therefore, 'the omission of remeasurement and the increase in power by increasing the repetition frequency' can shorten the exposure time. In the exposure device of the present invention, among the aforementioned control factors changed by the aforementioned control system, the relative position alignment accuracy of the aforementioned photomask and the aforementioned substrate may be included. In this case, when the required exposure accuracy is relatively strict, the control system also strictly demands the relative positional alignment accuracy of the photomask and the substrate, and when the required exposure accuracy is not too strict, the photomask is reduced accordingly. Relative position alignment accuracy with the substrate. Therefore, compared with the case where the relative positional alignment accuracy of the photomask and the substrate is strictly required at any time, the overall time required for the exposure process including the relative positional alignment of the photomask and the substrate can be shortened. Here, the change of the relative position alignment accuracy of the photomask and the substrate includes the calibration caused by the photomask, and the calibration caused by the substrate. All methods are included. At this time, the aforementioned control factors changed by the aforementioned control system can be set to the mode of reticle calibration or substrate calibration. Alternatively, the aforementioned control factors changed by the aforementioned control system may be set to the number of sampling irradiations or the number of sampling marks during the aforementioned substrate calibration. In addition, the aforementioned control factors changed by the aforementioned control system can be set as the number of sampling marks during the aforementioned mask calibration. 12 ------------- install -------- order --------- line * V (Please read the precautions on the back before filling this page) Paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 527636 A7 B7 V. Description of the invention (Please read the notes on the back before filling this page) The exposure device of the present invention, when the aforementioned The exposure system is provided with a mask stage for holding the mask, and a synchronous driving device (at the time of each exposure, the mask stage and the substrate stage are simultaneously driven in a predetermined direction with respect to the energy beam) In the aforementioned control factors changed by the aforementioned control system, it may be set to include at least one of the following: the state of movement of the two stages during each of the aforementioned exposures, and the intensity of the energy beam irradiated on the substrate depending on the state of movement, and It is used to determine the tolerance of the position error of the synchronization between the two carriers. If the moving speed (scanning speed) of the mask stage and the substrate stage is increased during exposure, the obvious exposure time (scanning exposure time) will be shortened. However, at this time, it is necessary to increase the intensity (illumination) of the energy beam irradiated on the substrate depending on the increase of the scanning speed in order to keep the accumulated energy (accumulated exposure amount) of the substrate surface at the target 値. In this case, the width of the scanning direction of the energy beam on the substrate can be increased, or the oscillation frequency (repetition frequency) of the energy beam can be increased. That is, it is only necessary to change at least one of the intensity, width, and oscillation frequency of the energy beam. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. When the tolerance for determining the position error of the synchronous completion of the photomask stage and the substrate stage is increased, it can be synchronized in a shorter time. The next exposure action can be started early, so the efficiency can be improved by shortening the overall exposure time. In addition, when the scanning speed is increased, the acceleration and deceleration speeds before and after the scanning must be increased because the movement range of the mask stage is usually limited, so the synchronization completion time becomes longer. At this time, in response to the increase of the scanning speed, the tolerance of the position error used to determine the synchronization completion is increased, that is, the exposure processing time can be shortened without increasing the synchronization completion time. 13 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 527636 A7 ---- B7 V. Description of the invention "l) Although the exposure device of the present invention can produce complex exposure processing programs (software ) (Including the judgment program that changes the aforementioned control factors according to the required exposure accuracy at each exposure based on self-judgment), add this program to the aforementioned control system, but in the aforementioned control system there is a processing program file (system settings When there are various parameters for controlling the aforementioned exposure system), in the aforementioned processing program file, parameters for performing each of the aforementioned exposures can be individually set. In this case, the operator individually sets the parameters in the processing program file in advance. Set the various parameters used for each exposure. The control system controls the exposure system according to the processing program file. Depending on the required exposure accuracy, the above-mentioned control factors are changed at each exposure. Therefore, it is not necessary to redo it. The above-mentioned complex exposure processing program can be coped with simply by changing the existing processing program file. In the step, by using the exposure method of the present invention, the exposure is improved while maintaining the exposure accuracy fully. Therefore, the yield of micro-elements with fine patterns is not reduced, but the efficiency can be improved and the productivity can be improved. Similarly, In the lithography step, by using the exposure device of the present invention for exposure, it is possible to improve the efficiency while maintaining the exposure accuracy while maintaining the exposure accuracy. Therefore, the efficiency of the micro-elements with fine patterns is not reduced, and the efficiency can be improved. Further improving productivity. As mentioned above, another invention of the present case is to provide a device manufacturing method using either the exposure method or the exposure device of the present invention. [Simplified description of the drawings] FIG. 1, which is omitted The figure shows the structure of an exposure device according to an embodiment of the present invention. 14 ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau 527636 A7 ___ B7 V. Description of the invention ((〉) Figure 2 shows the wafer when stepping between exposure and irradiation The speed change of the table is shown by the comparison between the low speed step (a) and the high speed step (b). Figure 3A shows the position error relative to the target 値 after the deceleration is completed corresponding to the situation in ⑷ in Figure 2. Fig. 3B is a diagram showing a position error relative to the target 値 after deceleration is completed when the situation corresponding to (b) in Fig. 2 is shown. Fig. 4 is a diagram for explaining an embodiment of a manufacturing method for manufacturing a component of the present invention Figure 5 is a flowchart showing the processing of step 204 in Figure 4. ------------- 04 ^ --- * 4 (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs [Description of symbols] 1 Light source 2 Illuminance uniformity optical system 3, 6 Relay lens 5A Fixed reticle shield 5B Movable reticle shield 7 Curved mirror 8 Condensing lens 10 Processing room 11 Marking plate driving unit 13 Irradiation optical system 14 Receiving optical system 15 Moving mirror 16 Marking plate laser jammer 19 Stage control system 15 r 幺, v > Good paper size applies Chinese National Standard (CNS) A4 specifications (210 x 297 mm) 527636 A7 B7 | Invention Ming (丨 20 Main Control Device 21 Wafer Drive Unit 25 Wafer Holder 30 I / O Device 31 Wafer Laser Interferometer 100 Exposure Device 102 Exposure System PL Projection Optical System RST Marking Board Stage WST Wafer Stage [Compared Detailed Description of the Preferred Embodiment] An embodiment of the present invention will be described below with reference to FIGS. 1 to 3. FIG. 1 shows a schematic configuration of an exposure apparatus 100 according to an embodiment of the present invention. The exposure device: 00, which is a scanning exposure device of a step scanning method, which is also a so-called scanning stepper. The exposure device 100 is irradiated with an energy beam 1L onto a patterned reticle R as a photomask, and the reticle is transmitted through a projection optical system PL (please read the precautions on the back before filling this page) Economy The pattern printed by the employee's consumer cooperative of the Ministry of Intellectual Property Bureau is reproduced by the exposure system 102 on the wafer W as a substrate, and is composed of two parts, the main control device 20 as a control system that controls the exposure system 102 as a whole. The exposure system 102 includes an ArF excimer laser light source (193 nm), a KrF excimer laser light source (wavelength 248 nm), or a pulsed laser light source (hereinafter, (Referred to as "light source") 1, together with the light source 1 constitutes the lighting optical system of the lighting system (2 16 This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 527636 A7 B7 V. Description of the invention (If), 3, 5 to 8) are used to hold the reticle stage RST (as a photomask) of the reticle R irradiated with an energy beam (hereinafter, referred to as "exposure light") from the lighting system Stage), a projection optical system PL that projects the exposure light IL emitted from the reticle R on the wafer W, and a wafer stage WST (as a substrate stage) that keeps the wafer W moving in the two-dimensional direction, and The processing chambers 10 having the above-mentioned configurations except the light source 1 are stored. The light source 1 is actually arranged in a service room with a lower cleanliness than the clean room in which the processing chamber 10 is provided (the processing chamber 10 is used to store the components and components of the illumination optical system. The reticle on-board stage RST, the projection optical system PL, and the wafer stage WST are connected to the processing chamber 10 through a light-transmitting optical system (not shown). Also, as the light source, bright lines (g-line, i-line, etc.) from ultraviolet bands of ultra-high pressure mercury lamps, high-harmonic generation devices for copper vapor sales, and YAG lasers can also be used. The light source 1 includes a laser oscillator, an energy monitor, an energy controller, and a high-voltage power source (all of which are not shown). The energy monitor monitors the optical characteristics of the pulsed light emitted from the laser oscillator. The energy controller performs feedback control on the power supply voltage of the high-voltage power supply in such a manner that the output of the energy monitor becomes the energy target corresponding to each pulse given by the main control device 20 during normal light emission. In addition, the energy controller also controls the energy supplied to the laser controller through a high-voltage power supply to change the oscillation frequency (repeated frequency). That is, the energy controller sets the oscillation frequency of the light source 1 to the frequency indicated by the main control device 20 according to the control information from the main control device 20, and makes the energy intensity of each pulse of the light source 1 become the main control device 20. 17 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page.) Γ Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 527636 A7- --- B7 V. The general description of the instructions ($) (that is, within the allowable range of the unevenness of energy intensity) is used to perform the feedback control of the power voltage of the high-voltage power supply. Such details are disclosed in, for example, Japanese Patent Application Laid-Open No. 8-250402 and corresponding U.S. Patent No. 5728495. Here, the disclosure of the aforementioned U.S. patent is cited as part of the description of this specification. A shutter for blocking the exposure light IL according to the control information from the main control device 20 is also arranged in the light source 1. The aforementioned illumination optical system includes an illumination uniformity optical system 2, a relay lens 3, a reticle shield 5, a relay lens 6, a curved mirror 7, a condenser lens 8, and the like. The aforementioned illuminance uniformization optical system 2 is, for example, a beam shaping optical system, an energy coarse adjuster, a fly-eye lens as an optical integrator, and illumination, which are sequentially arranged on the optical path of the exposure light IL. System aperture diaphragms, etc. (Illustrated). To further explain, the beamline shaping optical system is a cross-sectional shape of the exposure light IL that is emitted by the light source 1 in pulses and incident, and is formed into a compound eye micro-transparent that can efficiently enter the optical path behind the light path. It consists of a lenticular lens or a beam expander. Also, the coarse energy adjuster is arranged on the light path of the exposure light IL behind the beam shaping optical system. For example, the transmittance (= 1_light reduction rate) can be changed from 丨 ⑻% to multiple stages in equal steps. Switcher. The switching of the penetration rate of the coarse energy controller is performed by a main control device 20 through a driving device (not shown). The aforementioned fly-eye lens is arranged on the light path of the exposure light IL from the coarse energy adjuster. In order to illuminate the reticle r with a uniform illuminance, the Chinese paper standard (CNS) A4 specification (210) is applied to its 18 paper sizes. X 297 mm) ----------------- * 嗰 (Please read the notes on the back before filling this page)

I 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 527636 Α7 _____ Β7 五、發明說明（/ /) 射出側焦點^上形成由多數點光源（光源像)所組成之面光 源’亦即形成2次光源。前述照明系統孔徑光闌板，係配 置於複眼透鏡之射出側焦點面附近。該照明系統孔徑光闌 板係由圓板狀構件構成，並以大致等角度間隔，配置有例 如由通常之圓形開口形成之孔徑光闌，由小圓形開口形成 以使相干係數σ値變小之孔徑光闌，輪帶照明用之輪帶狀 之孔徑光闌，以及變形光源法用之使複數開口偏心配置而 成之變形照明用孔徑光闌等。此種情形時，係透過未圖示 之驅動系統以主控制裝置20驅動照明系統孔徑光闌板，以 選擇性的將任一孔徑光闌設定於曝光光IL之光路上。 在自照明系統孔徑光闌板射出之曝光光IL之光路上， 配置有反射率小但穿透率大之分光器，於其後方之光路上 ，進一步的透過由固定標線板遮板5Α與可動標線板遮板 5Β所組成之標線板遮板5，配置由中繼透鏡3及6所組成 之中繼光學系統。 固定標線板遮板5Α，係配置在相對標線板R圖案面之 共軛面略微散焦之面，形成有用以規定標線板R上之照明 區域IAR之矩形開口。又，於該固定標線板遮板5Α之附 近配置有可動標線板遮板5Β(具有對應掃描方向之方向位 置及寬度可變的開口部），在掃描曝光開始時及終了時透過 該可動標線板遮板5Β進一步的限制照明區域IAR，即能防 止不需要部份之曝光。 構成中繼光學系統之中繼透鏡6後方之曝光光IL的光 路上，配置有用以將通過該中繼透鏡6之曝光光IL反射向 19 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----孤--------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 527636 A7 B7 五、發明說明（/(f) 標線板R之彎曲鏡7，該彎曲鏡7後方之曝光光IL的光路 上配置有聚光鏡8。 (請先閱讀背面之注意事項再填寫本頁) 進一步的，照度均一光學系統2內之前述分光器之反 射光路上，配置有由光電變換元件構成之未圖示的積分感 知器。 以上述方式構成之照明光學系統之作用，簡單說明如 下。自光源1脈衝發出之曝光光IL，射入照度均一化光學 系統2內。於該照度均一化光學系統2內，曝光光IL，首 先被光束整形光學系統將其截面形狀加以整形以使其能有 效率地射入後方之複眼透鏡後，射入能量粗調器。之後， 穿透該能量粗調器之曝光光IL，射入複眼透鏡。據此，於 複眼透鏡之射出端形成由多數_點光源所構成之2次光源。 自該多數點光源射出之曝光光IL，通過照明系統孔徑光闌 板上之一孔徑光闌後，經過中繼透鏡3、通過固定標線板 遮板5A之矩形開口部以及可動標線板遮板5B後，通過中 繼透鏡6以彎曲鏡7將光路彎折向垂直下方後，經過聚光 鏡8，以均一照度分布照明保持在標線板載台RST上之標 線板R上的矩形照明區域IAR。 經濟部智慧財產局員工消費合作社印製 另一方面，以照度均一化光學系統2內之前述分光器( 圖7Γ；省略)反射之曝光光IL，於積分感知器感光，該積分感 知器之光電變換信號透過未圖示之峰値保持電路及A/D變 換器供給至主控制裝置20。 又，圖1中雖予以省略，但照明光學系統(2、3、5〜 8)之各構成部份，其被稱爲照明鑄造物之內部係與外部隔 20 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 A7 B7 五、發明說明（7) (請先閱讀背面之注意事項再填寫本頁) 離，並固定於外殼(housing)內側(該外殼內部充塡有氧氣(空 氣)之含有濃度在數ppb以下之潔淨氮或氨(He)等之惰性氣 體），該外殻係被未圖示之主框架上所設之支架支撐。 前述標線板載台RST上，標線板R例如係以真空吸附 方式加以固定。標線板載台RST，係配置在未圖示之標線 板基座上，能在垂直於照明光學系統之光軸IX(與後述投 影光學系統PL之光軸AX —致)之平面(XY平面）內進行微 小驅動，且能藉線板驅動部11於掃描方向(此處爲圖1紙 面左右方向之Y方向)在既定行程範圍內進行掃描。 經濟部智慧財產局員工消費合作社印製 該標線板載台RST之移動面內的位置(含旋轉），係透 過其上面固定之移動鏡15藉標線板雷射干擾儀16,例如 以0.5〜lnm左右之分解能力琴時加以偵測。來自標線板雷 射干擾儀16之標線板載台RST之位置資訊，被送至載台 控制系統19並透過此控制系統送至主控制裝置20。在載 台控制系統19，視來自主控制裝置20之指示，根據標線 板載台RST之位置資訊，透過標線板驅動部11對標線板 載台RST進行驅動控制。又，圖式中雖予以省略，標線板 基座，係保持在用以保持投影光學系統PL、被稱爲殷鋼之 保持構件，該殷鋼係裝設在未圖示之主框架上。 又，使用於標線板R之材質，須視光源之不同而使用 補救者。亦即，以ArF準分子雷射光源、KrF準分子雷射 光源作爲光源時，雖可使用瑩石、合成石英之任一者，但 在使用F2雷射光源時，有必要以瑩石等之氟化物結晶來加 以形成。 21 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（>〇) 前述投影光學系統PL，係配置在標線板載台RST之 圖1下方，其光軸AX(與照明光學系統之光軸IX —致)方 向爲Z軸方向，此處係使用兩側遠心縮小光學系統，且由 沿光軸AX方向以既定間隔配置之複數片透鏡元件所構成 之折射光學系統。該投影光學系統PL之投影倍率Θ，例 如係1/5或1/4。因此，如前所述，以曝光光IL照明標線 板R上之照明區域IAR時，該標線板R上形成之圖案藉由 投影光學系統PL、以投影倍率/3縮小之像即投影曝光於表 面上塗有抗蝕劑(感光劑)之晶圓上的狹縫狀曝光區域IA。 投影光學系統PL之鏡統內部，亦充塡氧(空氣)之含有 濃度在數PPb以下程度之潔淨氮(NO或氦(He)等之惰性氣體 〇 又，在使用之KrF準分子雷射光線、ArF準分子雷射 光來作爲曝光光IL時，雖可使用瑩石、或合成石英之任一 者來作爲構成投影光學系統PL之各透鏡元件，但在使用 F2雷射時，該投影光學系統PL所使用之透鏡材質，則完全 是瑩石等之氟化物結晶。 前述晶圓載台WST，例如係透過線性馬達或平面馬達 等所構成之晶圓驅動部21，於XY二維2平面內（包含0z 旋轉(繞Z軸之旋轉))驅動自如。晶圓載台WST上，設有晶 圓保持具25，藉該晶圓保持具.25以真空吸附方式保持晶 圓。該晶圓保持具25 ’實際上’係裝載於能在Z方向及相 對XY面之傾斜方向(繞X軸旋轉方向之0 X方向、以及繞 Y軸旋轉方向之0 y方向)進行微驅動之Z校平載台。因此 22 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 527636 A7 B7 五、發明說明 (山 ，能對晶圓W進行X、Y、Z、0x、0y、0Z等6自由度 方向之位置、姿勢控制。又，雖省略其圖示，但在未不圖 式之Z校平載台上，設有一其表面與晶圓W大致同一高度 ，且形成有各種基準標誌之基準標誌板。 又，晶圓載台WST在XY面內之位置，係透過移動鏡 27藉晶圓雷射干擾儀31以例如0·5〜lnm左右之分解能力 隨時加以偵測。晶圓載台WST之位置資訊(或速度資訊）， 被送至載台控制系統19並透此控制系統送至主控制裝置 20，載台控制系統19視來自主控制裝置20之指示，根據 前述位置資訊(或速度資訊），透過晶圓驅動部21對晶圓載 台WST進行驅動控制。 前述投影光學系統PL之鏡筒側面，設置有作爲離軸 方式標誌偵測系統之校準光學系統ALG。作爲此校準光學 系統ALG，例如，係使用以鹵素燈等之寬頻光照明標誌’ 對該標誌畫像進行畫像處理以測量標誌位置之校準感知器 ，亦即使用所謂之FIA(field image alignment)系統。該校準 光學系統ALG，能進行晶圓載台WST上所設未圖式之基準 標誌板上之基準標誌、以及晶圓上之校準標誌之X、Y二 維方向的位置測量。 來自該校準光學系統ALG之資訊，被送至未圖式之校 準控制裝置。然後，藉校準控制裝置對該資訊進行A/D變 換，將數位化之波形信號予以運算處理來偵測標誌位置° 偵測出之標誌位置資訊，被送至主控制裝置20。 又，作爲校準光學系統，可單獨或適當組合校準感知 23 1本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） " --------------裝--------訂---------線 -- (請先閱讀背面之注意事項再填寫本頁) 527636 A7 ____ B7 五、發明說明（>>) (請先閱讀背面之注意事項再填寫本頁) 器來使用（該校準感知器，係例如對對象標誌照射同調偵測 光’以偵測該對象標誌所產生之散射光或反射光，或者使 該對象標誌產生之二個繞射光（例如同次數)干擾以進行偵 測）。例如，可使用 LSA(Laser Step Alignment)系統， LIA(Laser Interferometric Alignment)系統等之校準感知器。 又，曝光系統102，係由保持投影光學系統PL之保持 構件上固定成一體之照射光學系統13與受光光學系統14 構成，具備用以測試晶圓W之Z方向位置的焦點感知器。 作爲該焦點感知器（13，14)，此處，係使用例如特開平6-283403號公報及與對應此之美國專利第5,448,332號等所揭 示之多焦點位置偵測系統。該焦點感知器(13, 14)之輸出供 給至主控制裝置20，主控制@置20即對晶圓載台控制系 統19下一指令，透過未圖式之Z校平載台控制晶圓保持具 25之Z位置、及校平，亦即，進行所謂之焦點校平控制。 又，本發明援用上述美國專利之揭示內容作爲本說明書記 載之一部份。 經濟部智慧財產局員工消費合作社印製 再者，圖1中雖省略其圖示，但在標線板R之上方設 有一對標線板校準顯微鏡（此顯微鏡，例如係特開平7-176468號公報及與此對應之美國專利第5,646,413號等所揭 示，透過投影光學系統PL用以同時觀察標線板R上之標 線板標誌（圖式省略）與基準標誌板上之標誌、使用曝光波 長之TTR(Through The Reticle)校準光學系統所構成。該等 標線板校準顯微鏡之偵測信號’透過未圖示之校準控制裝 置供給至主控制裝置20。 24 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 A7 B7 五、發明說明（Μ) (請先閱讀背面之注意事項再填寫本頁) 前述主控制裝置20，係由包含CPU、ROM、RAM和 I/O介面等之微電腦(或工作站)所構成，統籌控制曝光系統 102之構成各部。 該主控制裝置20上，一倂設有輸入出裝置30。該輸 出入裝置30，包含鍵盤，滑鼠等之指向裝置及顯示裝置等 。透過該輸入出裝置30由操作員進行各種數據輸入，作成 用以進行曝光條件設定之作爲一種數據庫的處理程式。此 點留待後述。 主控制裝置20，爲正確的進行曝光動作，統籌控制例 如標線板R與晶圓W之同步掃描、晶圓之步進、與曝光時 序等。 經濟部智慧財產局員工消費合作社印製 具體而言，主控制裝置20，例如在進行掃描曝光時， 係一邊根據雷射干擾儀16、3ί之測量値對標線板載台RST 與晶圓載台WST之位置進行管理，同時對晶圓控制系統 19下一標線板載台RST與晶圓載台WST之同步移動的指 示。載台控制系統19，根據此指示，一邊監視雷射干擾儀 16、31之測量値一邊透過標線板驅動部η、晶圓驅動部21 分別控制標線板載台RST、晶圓載台WST之位置及速度， 以使標線板R透過標線板載台RST對照明區域IAR於+ Υ 方向(或-Υ方向)以速度Vr=V進行掃描，同時同步使晶 圓W透過晶圓載台WST對曝光區域IA於一 Y方向（或+ Y 方向)以速度Vw=沒· V(0爲從標線板R對晶圓W之投影 倍率)進行掃描。如此，本實施例，藉標線板驅動部11、晶 圓驅動部21及載台控制系統19，來構成於每次曝光時， 25 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚） ' 527636 A7 B7 五、發明說明（4) 使標線板載台RST與晶圓載台WST同步相對曝光光IL驅 動於既定方向之同步驅動裝置。 (請先閱讀背面之注意事項再填寫本頁) 又，於步進時，主控制裝置20，一邊根據雷射干擾儀 31之測量値對晶圓載台WST之位置進行管理，一邊對載 台控制系統19下一步進之指示。載台控制系統19，根據 此指示，一邊監視雷射干擾儀31之測量値，一邊透過晶圓 驅動部21控制晶圓載台WST之位置。 又，主控制裝置20，於上述掃描曝光時，爲了將根據 曝光條件及抗鈾劑感度所決定之目標累積曝光量賦予晶圓 W，係藉持續監視前述積分感知器之輸出以將控制資訊供 給至光源1，來控制光源1之振盪頻率(發光時序）、及發光 功率，或藉由控制能量粗調器來進行照射於標線板R之光 量的調整。再者，主控制裝置，控制照明系統孔徑光闌 板，並進一步與載台系統之動作資訊同步，控制可動標線 板遮板5B之開關動作。 經濟部智慧財產局員工消費合作社印製 其次，針對本實施例之曝光裝置100，就曝光前進行 之用以作成處理程式之曝光條件設定簡單的加以說明。此 處，作爲其一例，針對在晶圓W上用以燒製線寬非常細之 獨立線所進行之雙重曝光際之曝光條件設定加以說明。此 雙方曝光，首先，作爲第一次曝光，使用形成有微細之線 與間隙(L/S)圖案的相位變換標線板(以下，爲方便起見，稱 爲「標線板R1」）來進行高精度之曝光。其次，作爲第二 次曝光，使用形成有遮蔽該L/S圖案內最終欲留下(欲複製 於晶圓上）之圖案部分之圖案的標線板(以下，爲方便起見 26 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明 (^) ，稱爲「標線板R2」）進行曝光，以消除L/S圖案之不需要 部分，將目標之獨立線複製在晶圓上。此一細節，例如已 揭示於特開平4-273427號公報等。 首先，操作員使用滑鼠在輸入出裝置30顯示器上顯示 之主選單畫面選擇雙重曝光。相應該雙重曝光之選擇指令 ，主控制裝置20將雙重曝光用標線板名稱之指定畫面顯示 在顯示上。接著，操作員藉由鍵盤等，分別輸入「R1」、 「R2」來作爲第1次曝光、第2次曝光分別使用之標線板 名稱。此處，該等輸入之標線板「Rl」、「R2」之數據， 係分別儲存在RAM之第1數據儲存區、第2數據儲存區。 當上述用以指定標線板名稱之輸入完成，操作員藉滑 鼠按下完成鍵時，即由主控制裝置20將顯示器上之畫面， 切換至下一輸入指定畫面、例如切換至照明條件之指定畫 面。接著，操作員藉由鍵盤等，輸入第1曝光、第2曝光 所分別使用之照明條件之數據。此處，作爲分別於第1曝 光、第2曝光中所使用之照明條件，例如係輸入變形照明 、普通照明。該等輸入之變形照明、普通照明之數據，係 分別儲存在RAM之第1數據儲存區、第2數據儲存區。 之後，操作員藉滑鼠按下完成鍵，主控制裝置20即將 下一輸入指定畫面顯示於顯示器上，其後以同樣方式，重 複進行條件數據之輸入、及畫面之切換，當全部之曝光數 據輸入完畢時，包含各次曝光時曝光條件之設定數據的處 理程式，即被作成於RAM內。 其次，說明依照上述處理程式進行之雙重曝光時的動 27 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----^--------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 527636 A7 B7 五、發明說明（>L) 作。 (請先閱讀背面之注意事項再填寫本頁) 作爲其前提，此曝光處理動作之開始時，係假設已完 成對晶圓載台WST上之晶圓供料，使用校準光學系統ALG 之增強型全晶圓校準EGA(enhanced global alignment)等之晶 圓校準等與晶圓W相關之準備作業。又，關於EGA，於特 開昭61-44429號公報及與此對應之美國專利第4,780,617號 等中有詳細之揭示，本案援用該美國專利之揭示作爲本說 明書之部分記載。 接著，操作員透過輸入出裝置30輸入曝光開始之指示 ，曝光處理動作即開始進行。 經濟部智慧財產局員工消費合作社印製 首先，主控制裝置20，讀出儲存在RAM內第1數據 儲存區之曝光條件數據(處理P式檔之一部份），根據該讀 出之曝光條件數據設定曝光條件。具體而言，透過未圖式 之標線板供料器將標線板R1裝載於標線板載台RST上。 此外，根據從RAM內第1數據儲存區讀出之數據，進行第 1次曝光時照明條件之設定、以及其他曝光條件之設定。 此處，照明條件之設定中，例如包含有照明系統孔徑光闌 板上之孔徑光闌之選擇設定。此時，係選擇變形照明用之 孔徑光闌。 其次，主控制裝置20，根據自RAM內第1數據儲存 區讀出之與曝光精度相關之數據，例如關於標線板R1之 資訊(具體而言，係相位變換標線板、非常細線寬之L/S圖 案等），作爲其一例，以下述方式，進行精細模式之標線板 校準。 28 ^紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公: 527636 A7 B7 五、發明說明（1) (請先閱讀背面之注意事項再填寫本頁) 亦即，主控制裝置20，根據雷射干擾儀16、31之測 量結果’對載台控制系統19下一指示，將標線板載台RST 、晶圓載台WST移動至使用未圖示之一對標線板校準顯微 鏡，能同時觀察下述標誌之位置，亦即能同時觀察晶圓載 台WST上之基準標誌板所形成之例如四對標線板校準用基 準標誌(以下，稱爲「第1基準標誌」）中既定之一對第1 基準標誌，以及與此對應之標線板R1上之標線板標誌之 像的位置。 其次，主控制裝置20，使用一對標線板校準顯微鏡， 測量對應於前述既定之一對第1基準標誌的一對標線板標 誌之像的位置偏差量。 接著，主控制裝置20，寧載台控制系統19下一指示 ，以投影倍率比使基準標誌板與標線板R1同步朝Y方向 移動，據以依序測量相對其他三對基準標誌的標線板標誌 像之位置偏差量。 經濟部智慧財產局員工消費合作社印製 然後，主控制裝置20，根據該四對標線板標誌之位置 偏差量，算出相對基準標誌板乃至於晶圓載台WST之標線 板R1投影像之位置偏差量的偏心、回轉角、變形、及掃 描方向之角度偏差等，並將該算出結果暫時記憶在RAM內 之記憶區域。又，此標線板校準動作，詳細揭示於特開平 7-176468號公報及與此對應之美國專利第5,646,412號等中 ，本案援用該美國專利之揭示作爲本說明書之部分記載。 接著，主控制裝置20，透過未圖式之成像特性修正控制器 來修正投影光學系統PL之成像特性，以使上述扭曲成爲 29 ^紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐）~" ' 527636 A7 B7 五 、發明說明d 最小。 (請先閱讀背面之注意事項再填寫本頁) 前述標線板校準終了後，主控制裝置20，移動晶圓載 台WST以使基準標誌板配置於校準光學系統ALG之正下 方，偵測基準標誌板上之第2基準標誌相對校準光學系統 ALG之檢出中心的位置偏差量，根據該位置偏差量之偵測 結果、此時之雷射干擾儀31之測量値、與設計上之基準線 量算出所謂之基準線量。 以此方式，用以進行晶圓W曝光之準備動作完成後， 主控制裝置20，即根據前述晶圓校準之結果、基準線測量 結果等，對載台控制系統19下達移動晶圓載台WST、標 線板載台RST之指示。據此，載台控制系統19，根據雷射 干擾儀31之測量値控制晶圓釋動部21，將晶圓載台WST 移動至用以進行晶圓W之第1曝光照射之掃描開始位置， 同時根據雷射干擾儀之測量値控制標線板驅動部11，將標 線板載台RST移動至掃描開始位置。根據來自主控制裝置 20之指示，載台控制系統19，修正標線板R1之位置，以 使前述標線板校準時所求得之標線板R1之位置偏差量爲 最小。 經濟部智慧財產局員工消費合作社印製 接著，根據來自主控制裝置20之指示，藉由載台控制 系統19，透過驅動部11、21開始標線板載台RST與晶圓 載台WST之Y方向掃描。然後，兩載台RST、WST分別 達到目標掃描速度(掃描速度），從主控制裝置20判斷兩載 台RST、WST已達到同步設定狀態之時間點起，藉來自光 源1之紫外脈衝光開始照明標線板R之圖案區域，而開始 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明) 前述掃描曝光。 於該掃描曝光之前’光源1雖已開始發光，但由於藉 主控制裝置20對可動標線板遮板5B各葉片之移動與標線 板載台RST之移動進行同步控制，因此防止對標線板R1 上之圖案區域的紫外光之照射，與通常之掃描步進器是相 同的。 然後，在將標線板R1之圖案區域的不同區域以紫外 脈衝光依序予以照明’對圖案區域全面之照明完成後，晶 圓W上第1曝光照射區域之掃描曝光即結束。據此，標線 板R1之圖案透過投影光學PL縮小複製在晶圓W上之第1 曝光照射區域。 此時，於上述掃描曝光時/根據來自主控制裝置20之 指示，以載台控制系統19，修正前述標線板校準時所求得 之標線板R1之掃描方向角度誤差。 如此，在結束第1曝光照明區域之掃描曝光後，根據 來自主控制裝置20之指示，藉載台控制系統，透過晶圓驅 動部21進行晶圓載台WST之曝光照射區域間之步進，移 動至用以進行第2曝光照射區域之曝光的掃描開始位置。 該步進動作時，載台控制系統19，依據來自主控制裝 置20之指示，根據雷射干擾儀31之測量値即時(real time) 測量晶圓載台WST之X、Y和0z方向之位置位移。此外 ，載台控制系統19，根據該測量結果，控制晶圓驅動部21 以使晶圓載台WST之XY位置位移成爲既定狀態。 又，載台控制系統19，依據來自主控制裝置20之指 31 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------I --------訂--------- (請先閱讀背面之注意事項再填寫本頁) 527636 A7 B7 五、發明說明（ (請先閱讀背面之注意事項再填寫本頁) 示，根據晶圓載台WST之0Z方向變位之資訊控制標線板 驅動部11，以補償該晶圓W測之旋轉變位誤差之方式對標 線板載台RST進行旋轉控制。 之後，當主控制裝置20判斷晶圓載台WST對用以進 行第2曝光照射區域之掃描開始位置的定位確定時，即以 和前述相同之方式，對晶圓W上之第2曝光照射區域進行 與上述相同之掃描曝光。 以此方式，重複進行對晶圓W上曝光照射區域之掃描 曝光與用以進行下一曝光照射之步進動作，於晶圓上所有 曝光對象區域依序複製標線板R1之圖案，結束第1次曝光 〇 經濟部智慧財產局員工消費合作社印製 其次，主控制裝置20，_出RAM內第2數據儲存區 中所收納之曝光條件數據(處理程式檔的一部份），根據此 讀出之曝光條件數據設定曝光條件。具體而言，係透過未 圖示之標線板供料器將標線板R2裝載於標線板載台RST 上。此外，根據從RAM內第2數據儲存區讀出之數據進行 第2次曝光時之照明條件的設定、及其他曝光條件之設定 。此處，作爲照明系統孔徑光闌板上之孔徑光闌，係選擇 通常照明用之孔徑光闌。 其次，主控制裝置20，根據自RAM內第2數據儲存 區讀出之與曝光精度相關之數據，例如關於標線板R2之 資訊(具體而言，係通常標線板，爲除部份以外圖案不存在 、不需圖案去除用之標線板等數據），進行將前述精細模式 標線板校準加以簡略化之快速模式標線板校準。 32 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 A7 B7 五、發明說明（wh (請先閱讀背面之注意事項再填寫本頁) 亦即，主控制裝置20，根據雷射干擾儀16 ' 31之測 量結果指示載台控制系統19,使用未圖示之一對標線板校 準顯微鏡，分別透過標線板驅動部Η、晶圓驅動部21來 移動標線板載台RST、晶圓載台WST，以使其位於能同時 觀察晶圓載台WST上之基準標誌板所形成之例如四對第1 基準標誌中既定之一對之第1基準標誌，及與此對應之標 線板R2上之標線板標誌像的位置。 其次，主控制裝置20使用一對標線板顯微鏡，測量前 述既定之一對第1基準標誌所對應之一對標線板標誌限之 位置偏差量。 然後，主控制裝置20，從該一對標線板標誌之位置偏 差量，算出相對基準標誌板乃声於晶圓載台WST之標線板 R2投影像之位置偏差量之偏差、旋轉角，將此算出結果記 憶在RAM內之暫時記憶區。又，此標線板校準動作，於特 開平7-176468號公報及與此對應之美國專利第5,646,413號 等中有詳細揭示。本案援用該美國專利之揭示作爲本說明 書之部分記載。 上述標線板校準結束後，不進行基準線測量，而使用 經濟部智慧財產局員工消費合作社印製 標線板R2，和前述同樣的以步進掃描方式，進行第二次曝 光。據此，於晶圓W上已經以良好精度複製了標線板R1 之圖案的所有曝光對象區域，重疊複製標線板R2之圖案 〇 藉以上之雙重曝光，於晶圓上各曝光照射區域分別形 成線寬極細之獨立線，將該晶圓W以顯影裝置加以顯影， 33 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） , 527636 A7 B7 五、發明說明 於晶圓上之各曝光照射區域上形成線寬極細之獨立線之抗 鈾劑圖像。 (請先閱讀背面之注意事項再填寫本頁) 此處，爲避免上述說明過份繁雜，雖特意省略說明， 但本實施例之曝光裝置100，係藉主控制裝置20，變更第 1次曝光、第2次曝光中，曝光區域間步進時之晶圓載台 WST的最高移動速度(以及加減速度）、以及判斷定位確定 之位置誤差的容許値。 以下，針對此進一步的詳細說明。圖2中，分別槪略 地顯示了，晶圓載台WST之第1次曝光時之曝光照射間步 進時之速度的時間變化(a)，與第2次曝光時之曝光照射間 步進時之速度的時間變化(b)。又，圖3A，係顯示對應圖2 中（a)之情形的相對減速結束缉目標値之位置誤差的時間變 化，圖3B，則係顯示對應圖2中(b)之情形的相對減速結束 後目標値之位置誤差的時間變化， 經濟部智慧財產局員工消費合作社印製 由圖2可知，曝光照射間步進時之最高移動速度(步進 速度)較快，而第2次曝光時，曝光照射間步進時間明顯較 短。因此，若加快晶圓載台WST之步進速度，即能縮短晶 圓W之曝光處理所需時間(曝光處理時間）。但是，由於提 高步進速度，即係在有限距離(曝光照射間距離）內以更高 速移動，因此由圖2明顯得知，加減速度之絕對値變大。 其結果，比較圖3A與圖3B可知，定位時之震動變得更大 。因此，若假設例如對判斷定位確定之目標値之位置誤差 (en〇的容許値(通常，係以標準偏差，亦即以RMS値爲基準 加以決定)皆爲相同値A時，步進速度爲高速者，其定位至 34 ϋ張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 527636 A7 B7 五、發明說明（ 確定爲止之時間(定位確定時間)必然變長。 因此，主控制裝置20，係根據所要求之曝光精度之數 據，例如根據關於標線板R1之資訊與關於標線板R2之資 訊，於第1次曝光時與第2次曝時，將晶圓載台WST之移 動狀態變更爲圖2所示之狀態，且將第2次曝光時之上述 位置誤差(err)之容許値，變更爲圖3B所示之値B。據此， 如圖3B所示，第2次曝光時之定位完成即快T1。此結果 ，比較圖3A與圖3B可知，不至增加定位確定時間，而能 與第1次曝光時相較縮短第2次曝光時之步進時間。 又，主控制裝置20，與上述同樣的，據所要求之曝光 精度之數據，例如根據關於標線板R1之資訊與關於標線 板R2之資訊，於第1次曝光f與第2次曝時，變更用以進 行曝光之兩載台RST、WST之移動狀態(掃描速度、加減速 度）。當然，與第1次曝光相較係提高了第2次曝光時之掃 描速度。當掃描速度增加時，曝光時間（掃描曝光時間）明 顯縮短。 此時，如前所示，作爲照明條件，由於在第1次曝光 時採用變形照明，在第2次照明時採用通常照明，因此第 2次照明時晶圓面(像面)之照度(照射在晶圓W之能量束強 度)變高。因此，主控制裝置20，根據該照度變化將第2次 曝光時之掃描速度設高，據此隨時將期望之累積曝光量賦 予至晶圓W上之各點。 又，增加掃描速度時，由於標線板載台RST之移動行 程受限而不得不加大掃描（等速同步移動區間）前後之加減 35 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 527636 A7 B7 五、發明說明 (請先閱讀背面之注意事項再填寫本頁) 速度。因此，兩載台RST、WST之加速結束後之目標速度 的誤差（因此，係對目標位置之誤差）變大，其結果，當根 據同一位置之容許値來判斷同步確定之結束時，兩載台 RST、WST到達等速同步狀態之時間（同步確定時間)變長。 因此，主控制裝置20，因應增加掃描速度而加大決定同步 確定之位置誤差的容許値，進而與第1次曝光時相較，不 增加第2次曝光時之同步確定時間。 如上述說明般，根據本實施例之曝光裝置100，對同 一晶圓W重複進行二次曝光時，例如，爲了在晶圓W上 燒製極細之獨立線，而對晶圓W上各曝光照射區域使用前 述標線板Rl、R2進行雙重曝光時，主控制裝置20，根據 各次曝光所要求之曝光強度($實施例中，舉一例而言，係 如前述般根據關於標線板Rl、R2之資訊來加以判斷），來 變更： a·相對於用以判斷曝光照射間步進時晶圓載台WST 之移動狀態（步進速度、加減速度）、以及至下一曝光照射 區域之掃描開始位置之定位確定的目標値之位置誤差(err) 容許値； 經濟部智慧財產局員工消費合作社印製 b·決定爲進行曝光時之兩載台RST、WST之移動狀態 (掃描速度、加減速度）、以及因應掃描速度增加之同步確 定之位置誤差的容許値； c·標線板校準之精細模式或快速模式之設定等。 此時，主控制裝置20，無論其控制因素爲何，對要求 曝光精度較嚴格之第1次曝光而言，爲解析力較效率受重 36 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 A7 B7 五、發明說明 視之狀態，對要求曝光精度不那麼高之曝光而言，相反地 係效率較解析力受重視之狀態。 (請先閱讀背面之注意事項再填寫本頁) 藉上述a.相對於用以判斷曝光照射間步進時晶圓載 台WST之移動狀態(步進速度、加減速度）、以及至下一曝 光照射區域之掃描開始位置之定位確定的目標値之位置誤 差(err)容許値的變更，如前所述，由於不增加定位確定時 間，即能與第1次曝光時相較縮短第2次曝光時之步進時 間，因此，其結果即能縮短曝光處理時間。 但是，並不一定非如此不可，只要考慮因步進速度之 提昇所帶來之曝光處理時間之縮短與定位確定時間之增加 ’來變更晶圓載台WST步進時之速度及加減速度(移動狀 態)以提昇整體之效率的話，吏恆使用相同値來作爲判斷 上述定位確定之目標値相對的位置誤差(err)之容許値亦可 〇 經濟部智慧財產局員工消費合作社印製 或者，在第1次曝光時與第2次曝光時，不變更晶圓 載台WST之速度及加減速度(移動狀態），而僅變更定位時 之位置誤差亦可。當加大該位置誤差之容許値時，由於能 更短時間內判斷定位狀態，而能更快開始下一動作(例如， 爲進行曝光之標線板載台RST、晶圓載台WST之掃描動作 )，因此能縮短全體之曝光處理時間。 又，藉上述b.決定爲進行曝光時之兩載台RST、WST 之移動狀態（掃描速度、加減速度）、以及因應掃描速度增 加之同步確定之位置誤差之容許値的變更，如前所述，能 不增加曝光時之同步確定時間，與第1次曝光時相較增加 37 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（》(）' 第2次曝光時之掃描速度，因此能縮短掃描曝光時間。 但是，不限於此，只要考慮因掃描速度之提昇所帶來 之掃描曝光處理時間之縮短與同步確定時間之增加，來變 更晶圓載台WST掃描時之移動狀態(速度及加減速度)以提 昇整體之效率的話，即使恆使用相同値來作爲判斷上述同 步確定之位置誤差(err)之容許値亦可。 或者，不變更標線板載台RST與晶圓載台WST之掃 描速度等，而增大用以決定兩載台之同步確定之位置誤差 的容許値亦可。此時，由於在更短時間即成爲同步確定狀 態，因此能更快的開始下一曝光動作(曝光光IL之照射動 作），而能縮短整體曝光時間。 藉上述c.之標線板校準學式的變更，與第1次曝光相 較，第2次標線板校準所需要時間明顯縮短，與各次曝光 時進行之精細模式的標線板校準相較，能提昇效率。該標 線板校準，由於係爲了標線板與晶圓之相對位置重疊所進 行者，因此本實施例，係由主控制裝置20藉變更標線板校 準模式之手段，作爲其結果，變更曝光時標線板圖案與晶 圓之相對位置重疊精度。 根據本實施例之曝光裝置100，由於上述a.〜c·之各種 效率控制因素，係由主控制裝置20視所要求之曝光精度以 前述方式加以變更，因此與對同一晶圓進行上述雙重曝光 時，每次皆根據相同效率控制因素來控制曝光系統1〇2之 情形相較，明顯地可提升效率。一方面，由於在所要求之 曝光精度不那麼高之第2次曝光，換言之’僅在容許某種 38 -----^--------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） 經濟部智慧財產局員工消費合作社印製 527636 A7 B7 五、發明說明（>y) 程度降低曝光精度時，以較重視效率之方式變更效率控制 因素，因此其結果就曝光精度而言’能維持充分之精度。 又，上述a.〜c.之效率控制因素中’例如亦可不進行上述 c.之因素變更。亦即，於第1次曝光與第2次曝光中，僅 變更與曝光動作（除校準以外)相關之至少一個效率控制因 素亦可。 亦即，以上，雖係就用以將線寬極細之獨立線圖案燒 製於晶圓W上之雙重曝光加以說明，但不限於此，同樣地 ，只要是包含用以規定圖案尺寸之第1次曝光與用以規定 圖案形狀之第2次曝光之雙重曝光的話，即能以本實施例 之曝光裝置100，以和上述大致同樣之方式，充分的維持 曝光精度、且提昇效率。 . 作爲前述雙重曝光方法之其他例，例如亦有下述曝光 方法，亦即，使用較設定値(最終要得到之値)更長之L/S或 獨立線來作爲第1圖案，於複製該第1圖案時，使用變形 照明或相位變換標線板，來謀求提昇解析度與焦點深度 (DOF)，爲去除該等線圖案兩端部之細小部份，將各線圖案 所對應之框狀圖案作爲第2圖案於通常照明條件下加以複 製之方法。該曝光方法，揭示於例如特開平10-284377號 公報及與此對應之美國專利申請號第055,949(申請日1998 年4月7日）等，本案援用該美國專利申請之揭示作爲本說 明書之部分記載。 作爲其他例，例如，有詳細揭示於特開平2-166717號 公報等中，爲將具有突出小角形狀之圖案燒製在晶圓上而 39 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） ------------- --------訂--------- (請先閱讀背面之注意事項再填寫本頁) 527636 A7 B7 五、發明說明（>/) (請先閱讀背面之注意事項再填寫本頁) 提出之光學近程改正圖案(〇PC，optical piOximity correction pattern)。該〇PC，不只第1次曝光所需之電路圖案’甚至 不需之圖案亦加以燒製。第2次曝光中，雖會進行消除不 必要圖案之曝光，但第2次曝光不需做到第1次曝光程度 之精度。因此，與上述同樣的，視所要求之曝光精度變更 效率控制因素(變更控制精度），即可縮短第2次曝光所需 時間，而謀求效率之提升。 又，上述實施形態，雖係就同一晶圓之雙重曝光的情 形作了說明，但視所要求之曝光精度來變更效率控制因素( 變更控制精度)之手法，亦能完全適用於三重曝光以上之多 重曝光，此處應不須特別加以說明。 又，至此之說明，雖係_本發明適用於雙重曝光等之 多重曝光時之情形作了說明，但若每次曝光所要求之曝光 精度不同話，在將圖案接合複製於同一晶圓（基板)上相鄰 區域之接合曝光時，亦可同樣的適用本發明。 經濟部智慧財產局員工消費合作社印製 此外，若每次（各層)曝光所要求之曝光精度不同的話 ，第1次曝光與第2次曝光，可以是對同一晶圓(基板)之 不同層的曝光。此時，與前述同樣地，第1次曝光係用以 規定圖案尺寸之曝光，而第2次曝光則係用以規定圖案形 狀之曝光。此情形中，只要將第2次曝光時之控制精度(根 據上述實施形態，例如因前述a.〜c.之效率控制因素變更 所變更之精度)設定得較第1次曝光時之控制精度較低即可 。如此，與上述實施形態同樣地，能維持充分之曝光精度 ，同時提昇效率。 40 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 _ B7_ 五、發明說明（ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 例如’在對同一晶圓之不同層進行曝光時，主控制裝 置20，視各層曝光所要求之曝光精度，與上述實施形態相 同地，可變更曝光照射間步進時之晶圓載台WST之移動狀 態與定位時位置誤差容許値之至少一方，掃描曝光時之標 線板載台RST、晶圓載台WST之移動狀態(掃描速度、加 減速度)及與此對應之判斷晶圓面照度與同步確定之位置誤 差容許値之至少一方，或前述標線板載台校準之模式，或 該三者之全部。亦可取代或再加上主控制裝置20於第2層 以後之曝光時，視所要求之曝光精度變更在各層曝光前進 f了之則述EGA之取樣曝光照射數或取樣標誌數。此時，所 要求之曝光精度較嚴格時，增加EGA取樣曝光照射數，所 要求之曝光精度不那麼嚴格Bf，減少取樣曝光照射數的話 ’即能不受所要求之曝光精度的影響，與恆要求同數之取 樣曝光照射數的情形相較，能提昇效率。又，亦能充分維 持曝光精度。此時，因EGA取樣曝光照射數之變更，使標 線板與晶圓之相對位置對準變更一事，自無需贅言。又， 亦可使用複數之晶圓校準模式(例如，包含：將根據EGA 模式、與每一取樣曝光照射時應算出座標値之曝光照射間 距離的重量賦予其位置資訊之重量EGA模式等），視前述 曝光精度來變更其模式。 取代前述之說明或再加上主控制裝置20，視所要求之 曝光精度，變更各次曝光時從光源1射出照射於晶圓w之 脈衝光之能量不均一性容許値、以及重複頻率之至少一方 ’來作爲效率控制因素亦可。若脈衝光之能量強度不均一 41 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） " 經濟部智慧財產局員工消費合作社印製 527636 A7 B7 五、發明說明（$〇) 性之容許値增大，即能縮短該份量之調整時間。又，若重 複頻率變高，功率即與此相應增大，而須進行再測量，但 若所要求曝光精度較低的話，即使省略前述再測量亦無妨 礙。因此，藉再測量之省略、與提昇重複頻率而使功率增 大（爲掃描型曝光裝置時，須視此調整掃描速度），即能縮 短曝光時間。 又，上述實施形態，雖係就主控制裝置20視所要求之 曝光精度，於每次曝光時根據自己之判斷來變更前述效率 效率控制因素之情形作了說明，但本發明不限於此。例如 ，與上述實施形態同樣地，在控制系統具有設定了各種用 以進行曝光系統控制之參數的處理程式檔案時，亦可設爲 於處理程式檔案中，個別設定.與各次曝光時所使用之前述 控制因素相關之參數値。於此種情形中，由操作員預先於 處理程式檔案中個別設定各次曝光所使用之各種參數値， 控制系統根據該處理程式檔案進行曝光系統之控制，據此 ，視所要求之曝光精度，於各次曝光時進行上述控制因素 之變更。因此，不需重新作成包含判斷程式之複雜的處理 程式（軟體），以現有處理程式檔案加以簡易的變更即足夠 〇 又，上述實施形態，雖係就本發明適用於步進掃描方 式之掃描型曝光裝置的情形作了說明，但本發明之適用範 圍不限於此，亦非常適合使用於步進器等之靜止曝光型曝 光裝置。若爲步進器時，取代至此說明之效率控制因素(但 ，與掃描相關者除外)或與此同時，由控制系統來變更各次 42 尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） " -------------裝--------訂---------線 . - (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 527636 A7 B7 五、發明說明（1ψ/) 曝光時之焦點偏差容許値亦可。 例如，在所要求之曝光精度較嚴格時，曝光時容許之 焦點偏差量變得非常小，若所要求之曝光精度較低的話’ 曝光時之容許焦點偏差量即使略大亦無影響。因此’控制 系統，在所要求之曝光精度較嚴格時’相應減小曝光時之 焦點偏差容許値，在所要求之曝光精度不那麼嚴格時’將 曝光時之焦點偏差容許値設定得較大些。其結果’與前者 相較，爲後者時之焦點設定時間變短，無論要求之曝光精 度爲何，與將曝光時之焦點偏差容許値設成一定之情形相 較，能縮短曝光處理時間。此時，能維持充分的曝光精度 〇 又，若爲步進器時，如特興平7-122473號公報及與此 對應之美國專利申請號第240,599(申請日1999年2月1日) 等所揭示的，有於標線板(光罩)側亦使甩與EGA相同之手 法，採用透過投影光學系統求出標線板倍率、轉動等之校 準法，但視所要求之曝光精度，藉變更該EGA之取樣標誌 數，來變更光罩與基板之相對位置對準精度亦可。本案援 沿用上述美國專利申請之揭示作爲本說明書之部分記載。 又，若爲步進器時，若增強照射在基板上之能量束強 度（基板上之照度），由於能縮短對基板之曝光時間，因此 藉曝光處理時間之縮短能提昇效率。變更該基板上之照度 時，若能量束源爲脈衝雷射光源時，亦可進行諸如：江重 複頻率設爲更大之頻率，增加來自能量束源之每一脈衝之 能量値，或變更能量束源與基板間光路中之減光元件的減 43 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------------------訂--------- ,ψ 一 (請先閱讀背面之注意事項再填寫本頁) 527636 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（ψΐ) 光率等。 \ 又，本發明亦可適用於不使用投影光學系統之近接方 式之X光曝光裝置等。 又，上述實施形態，雖係就本發明適用於使用ArF準 分子雷射光(波長193nm)或F2雷射光(波長157nm)來作爲曝 光光IL之曝光裝置作了說明，但並不限於此，本發明亦非 常適合使用於採用波長146iim之Kn雷射光、波長126nm 之An雷射光等之真空紫外光的曝光裝置、或採用波長5〜 30nm之軟X線區域之EUV光的EUV曝光裝置等。 此外，本發明，作爲能量束，亦可使用將從DFB半導 體雷射或光纖雷射射出之紅外線帶、或可視光帶之單一波 長雷射光，以例如摻雜餌（或f耳與鏡二者)之光纖擴大器加 以放大，使用非線性光學結晶將之波長變換爲紫外光之高 諧波。 例如，設單一波長雷射之振盪波長在1.51〜1.59μιη之 範圍內時，即輸出波長爲189〜199nm範圍內之8倍高諧波 、或波長爲151〜159nm範圍內之1〇倍高諧波。特別是， 振盪波長在1.544〜1·553μιη範圍內時，可得波長爲193〜 194nm範圍內之8倍高諧波，亦即可得與ArF準分子雷射 光大致相同波長之紫外光，而振盪波長在丨.57〜1·58μπι範 圍內時，可得波長爲157〜158nm範圍內之10倍高諧波， 亦即與F2雷射光大致相同波長之紫外光。 又，若設振盪波長在1.03〜1.12μπι之範圍內時，可輸 出波長爲147〜160nm範圍內之7倍高諧波，特別是設振盪 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 527636 A7 B7 五、發明說明（ 波長在1.099〜1.106μιΓ之範圍內時，碟獲得波長爲157〜 158μιη範圍內之7倍高諧波，亦即與F2雷射光大致相同波 長之紫外光。此時，作爲單一波長振盪雷射，刻使用鏡摻 雜光纖雷射。 又，上述實施形態所示之投影光學系統、照明光學系 統僅爲一例，本發明當然不只限於此。例如，作爲投影光 學系統不限於折射光學系統，亦可採用僅由反射光學元件 所構成之反射系統，或具有反射光學元件與折射光學元件 之反射折射系統。 又，本發明本僅可用在製造半導體元件所使用之曝光 裝置，亦可使用於：製造包含液晶顯示元件等之顯示器所 使用之將元件圖案複製於玻瑪基板上之曝光裝置，製造薄 膜磁頭所使用之將元件圖案複製於陶瓷晶圓上之曝光裝置 ，及製造攝像元件(CCD等）、微機械及DNA晶片等，以及 製造光罩或標線板等所使用之曝光裝置等。 又，將由複數鏡片構成之照明光學系統、投影光學系 統PL組入曝光裝置之本體、進行光學調整，且將由多數 機械零件構成之標線板載台RST及晶圓載台WST等組裝 於曝光裝置之本體、連接配線及配管，進一步的進行綜合 調整（電氣調整、動作確認等）即能製造上述實施形態之曝 光裝置100等本發明之曝光裝置。又，曝光裝置之製造最 好是能在溫度與潔淨度受到管理之無塵室進行。 [元件製造方法] 其次，說明微影製程中使用上述曝光裝置100及其曝 45 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------------------訂·-------- * 1 (請先閱讀背面之注意事項再填寫本頁) 527636 A7 B7 五、發明說明（tf) 光方法的元件製造方法之實施形態。 圖4，係顯示元件(1C及LSI等之半導體晶片、液晶面 板、CCD、薄膜磁頭、微機械等)製造例的流程圖。如圖4 所示，首先，於步驟201(設計步驟）中，進行元件之功能、 性能設計（例如，半導體元件之電路設計等），以進行爲實 現其機能之圖案設計。接著，於步驟202(光罩製作步驟）中 ，製作形成有所設計之電路圖案的光罩。另一方面，於步 驟203(晶圓製造步驟)中，使用矽等材料製造晶圓。 其次，於步驟204(晶圓處理步驟)中，使用在步驟201 〜步驟203所準備之光罩與晶圓，如後述般，經微影技術 等於晶圓上形成實際之電路等。接著，於步驟205(元件組 裝步驟），使用在步驟204所寧理之晶圓進行元件裝置組裝 。該步驟205 ’可視需要包含切割步驟、打線步驟以及封 裝步驟等步驟。 最後，於步驟206(檢查步驟)中，進行在步驟205所製 作之元件的動作確認測試 '持久性測試等之檢查。經過上 述步驟後’兀件完成即可出貨。 經濟部智慧財產局員工消費合作社印製 圖5，係顯示爲半導體元件時，上述步驟204之詳細 流程例。圖5中，步驟211(氧化步驟)係使晶圓表面氧化。 步驟212(CVD步驟)係於晶圓表面形成絕緣膜。步驟213(電 極形成步驟)係於晶圓上以蒸鍍方式形成電極。步驟214(離 子植入步驟）係於晶圓植入離子。以上之步驟211〜步驟 214構成晶圓處理各階段之前處理步驟，於各階段中視必 須之處理選擇性的加以實施。 46 尺度適用標準（CNS)A4規格（210 x 297公釐） 527636 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明 晶圓處理之各階段，當上述前處理步驟結束後’即以 下述方式進行後處理步驟。此後處理步驟，首先’於步驟 215(光阻形成步驟）中，在晶圓上塗布感光劑。接著’於步 驟216(曝光步驟）中，以上述說明之微影系統(曝光裝置)將 光罩之電路圖案複製於晶圓上。其次，於步驟217C頌^步 驟）中使已曝光之晶圓顯影，於步驟218(鈾刻步驟）中以蝕 刻方式除去光阻劑殘留部分以外之部分的露出構件。之後 ，於步驟219(光阻除去步驟)中，除去蝕刻完畢後不用的光 阻劑。 重複進行該等前處理步驟與後處理步驟，據以在晶圓 上形成多重電路圖案。 根據以上說明之本實施取態之元件製造方法，由於在 曝光步驟(步驟216)中係使用上述實施形態之曝光裝置及其 曝光方法來進行曝光，因此能一邊維持充分的曝光精度， 提昇效率進行曝光。是以，不至降低具有微細圖案之微元 件的良率，提昇效率進而提昇生產性。 上述本發明之實施形態，僅爲本發明中之較佳實施形 態，並非用來限定本發明的實施範圍；即凡依本發明申請 專利fe圍所作的均等變化與修飾，皆爲本發範圍所涵蓋。 47 ---------------------訂--------- 罨 V (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（21(^ 297公髮)I Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by 527636 Α7 _____ Β7 V. Description of the Invention (/ /) The focus on the emission side is composed of most point light sources (light source images) The surface light source 'is a secondary light source. The aforementioned aperture diaphragm plate of the illumination system is arranged near the focal plane on the exit side of the fly-eye lens. The aperture diaphragm plate of this illumination system is composed of a circular plate-shaped member, and is arranged at approximately equal angular intervals, for example, an aperture diaphragm formed by a general circular opening, and formed by a small circular opening to change the coherence coefficient σ 値Small aperture diaphragms, wheel-belt-shaped aperture diaphragms for wheel belt lighting, and deformed lighting aperture diaphragms with eccentric configuration of multiple openings by the deformed light source method. In this case, the main control device 20 is used to drive the aperture diaphragm of the lighting system through a driving system (not shown), so as to selectively set any aperture diaphragm on the light path of the exposure light IL. On the light path of the exposure light IL emitted from the aperture diaphragm plate of the lighting system, a beam splitter with a small reflectance but a large transmittance is arranged. On the light path behind it, further transmission is performed by the fixed reticle shield 5A and The reticle shield 5 composed of the movable reticle shield 5B is configured with a relay optical system composed of the relay lenses 3 and 6. The fixed reticle shield 5A is disposed on a surface slightly defocused from the conjugate surface of the R-patterned surface of the reticle to form a rectangular opening defining the lighting area IAR on the reticle R. Further, a movable reticle shutter 5B (having a direction position and a width-variable opening portion corresponding to the scanning direction) is disposed near the fixed reticle shutter 5A, and passes through the movable at the beginning and end of the scanning exposure. The reticle mask 5B further restricts the lighting area IAR, which can prevent unnecessary exposure. The optical path of the exposure light IL behind the relay lens 6 constituting the relay optical system is configured to reflect the exposure light IL passing through the relay lens 6 to 19. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----- solitary -------- install -------- order --------- line (please read the precautions on the back before filling in this Page) 527636 A7 B7 V. Description of the invention (/ (f) Curved mirror 7 of the reticle R, a condenser 8 is arranged on the optical path of the exposure light IL behind the curved mirror 7. (Please read the precautions on the back before filling (This page) Further, an integrated sensor (not shown) composed of a photoelectric conversion element is arranged on the reflected light path of the aforementioned spectroscope in the illuminance uniform optical system 2. The function of the illumination optical system configured as described above is briefly explained. The exposure light IL emitted from the light source 1 pulses enters the illumination uniformity optical system 2. In the illumination uniformity optical system 2, the exposure light IL is first shaped by the beam shaping optical system to shape its cross-section so that After it can efficiently enter the compound eye lens at the rear, After that, the exposure light IL penetrating the coarse energy adjuster enters the fly-eye lens. According to this, a secondary light source composed of a plurality of point light sources is formed at the exit end of the fly-eye lens. The exposure light IL passes through one of the aperture diaphragms of the aperture diaphragm plate of the lighting system, passes through the relay lens 3, passes through the rectangular opening portion of the fixed reticle plate 5A, and passes through the relay reticle plate 5B. The lens 6 bends the light path vertically downward with a curved mirror 7 and passes through the condenser lens 8 to illuminate the rectangular illumination area IAR on the reticle R on the reticle carrier RST with uniform illumination distribution. The Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the employee consumer cooperative. On the other hand, the exposure light IL reflected by the aforementioned spectroscope (Figure 7Γ; omitted) in the illumination uniformization optical system 2 is received by the integral sensor, and the photoelectric conversion signal of the integral sensor is not shown. The shown peak-to-peak holding circuit and A / D converter are supplied to the main control device 20. Although omitted in FIG. 1, each component of the illumination optical system (2, 3, 5 to 8) is called For lighting castings Departments and external partitions 20 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 527636 A7 B7 V. Description of the invention (7) (Please read the precautions on the back before filling this page) And fixed on the inside of the housing (the inside of the housing is filled with inert gas such as clean nitrogen or ammonia (He) containing oxygen (air) with a concentration of several ppb or less). A bracket provided on the frame supports the marking plate carrier RST, for example, the marking plate R is fixed by vacuum adsorption. The marking plate carrier RST is arranged on a marking plate base (not shown). , Can be micro-driven in a plane (XY plane) perpendicular to the optical axis IX of the illumination optical system (which is the same as the optical axis AX of the projection optical system PL described later), and the wire plate driving section 11 can be used in the scanning direction (this (Y direction in the left-right direction of the paper surface in FIG. 1) is scanned within a predetermined stroke range. The position (including rotation) of the marking board carrier RST printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is borrowed from the marking board laser jammer 16 through a moving mirror 15 fixed on it, for example, 0 . Detect when the resolution is around 5 ~ lnm. The position information of the reticle on-board stage RST from the reticle laser jammer 16 is sent to the stage control system 19 and sent to the main control device 20 through this control system. In the stage control system 19, according to the instruction from the main control device 20, the reticule plate carrier RST is driven and controlled by the reticule plate drive unit 11 based on the position information of the reticle stage RST. Although omitted from the drawings, the reticle base is held by a holding member called Yin Gang, which holds the projection optical system PL, and is mounted on a main frame (not shown). In addition, the material used for the reticle R should be used depending on the light source. That is, when using ArF excimer laser light source or KrF excimer laser light source as the light source, either fluorite or synthetic quartz can be used, but when using F2 laser light source, it is necessary to use fluorite or the like. Fluoride crystals are formed. 21 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 527636 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (> 〇) The aforementioned projection optical system PL, configuration Below the reticle on-board stage RST, the direction of the optical axis AX (the same as the optical axis IX of the illumination optical system) is the Z axis direction. Here, the telecentric reduction optical system on both sides is used. A refractive optical system composed of a plurality of lens elements arranged at predetermined intervals in the AX direction. The projection magnification Θ of the projection optical system PL is, for example, 1/5 or 1/4. Therefore, as described above, when the illumination area IAR on the reticle R is illuminated with the exposure light IL, the pattern formed on the reticle R is projected and exposed by the projection optical system PL and the image reduced by the projection magnification / 3. A slit-shaped exposure area IA on a wafer having a surface coated with a resist (photosensitive agent). Inside the lens system of the projection optical system PL, oxygen (air) is also filled with clean nitrogen (NO or helium (He) and other inert gases containing concentrations below a few PPb), and KrF excimer laser light is used. When ArF excimer laser light is used as the exposure light IL, either fluorite or synthetic quartz can be used as each lens element constituting the projection optical system PL, but when F2 laser is used, the projection optical system The lens material used in PL is completely fluorinated crystals such as fluorite. The wafer stage WST is, for example, a wafer driving unit 21 formed by a linear motor or a planar motor, in the XY two-dimensional plane ( Including 0z rotation (rotation around the Z axis)) can be driven freely. On the wafer stage WST, a wafer holder 25 is provided, and the wafer holder is borrowed. 25 Keep the crystal circle in a vacuum suction mode. The wafer holder 25 is "actually" mounted in a micro-drive in the Z direction and the tilt direction with respect to the XY plane (0 X direction around the X-axis rotation direction and 0 y direction around the Y-axis rotation direction). School Z flat loader. Therefore, 22 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm) ------------- installation -------- order ------ --- Line (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 527636 A7 B7 V. Description of the invention (Mountain, can perform X, Y, Z, 0x on wafer W , 0y, 0Z and other 6-degree-of-freedom position and attitude control. Also, although the illustration is omitted, a Z flattening stage (not shown) is provided with a surface approximately the same height as the wafer W, and Reference mark plates with various reference marks are formed. The position of the wafer stage WST in the XY plane is detected by the wafer laser jammer 31 through the moving mirror 27 with a resolution of about 0.5 to 1 nm at any time. The position information (or speed information) of the wafer stage WST is sent to the stage control system 19 and transmitted to the main control device 20 through this control system. The stage control system 19 sees the instructions from the main control device 20 according to The position information (or speed information) is used to drive and control the wafer stage WST through the wafer driving unit 21. The aforementioned projection optics The side of the lens barrel of the system PL is provided with an alignment optical system ALG as an off-axis mark detection system. As this alignment optical system ALG, for example, a wide-band light illumination sign using a halogen lamp or the like is used to image the sign. The calibration sensor used to measure the position of the mark uses a so-called FIA (field image alignment) system. The calibration optical system ALG can perform the reference mark on the unmarked reference mark plate on the wafer stage WST, And the position measurement of the two-dimensional directions of the calibration marks on the wafer in the X and Y directions. The information from the calibration optical system ALG is sent to an unillustrated calibration control device. Then, the information is A / D transform, calculate and process the digitized waveform signal to detect the position of the sign ° The detected position information of the sign is sent to the main control device 20. In addition, as a calibration optical system, it can be calibrated and sensed separately or appropriately 23 1 This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) " -------------- installation -------- order ----- ---- line-- (Please read first Note on the back then fill in this page) 527636 A7 ____ B7 V. Description of the invention (> >) (Please read the note on the back before filling out this page) Irradiate coherent detection light 'to detect scattered or reflected light generated by the object mark, or to interfere with two diffracted lights (such as the same number of times) generated by the object mark for detection. For example, LSA ( Laser Step Alignment) system and LIA (Laser Interferometric Alignment) system. The exposure system 102 is composed of an irradiation optical system 13 and a light receiving optical system 14 which are fixed integrally to a holding member that holds the projection optical system PL, and includes a focus sensor for testing the position in the Z direction of the wafer W. As the focus sensor (13, 14), a multi-focus position detection system disclosed in, for example, Japanese Patent Application Laid-Open No. 6-283403 and US Patent No. 5,448,332 corresponding thereto is used. The output of the focus sensor (13, 14) is supplied to the main control device 20, and the main control @set 20 is the next instruction to the wafer stage control system 19 to control the wafer holder through the Z leveling stage (not shown). The Z position of 25 and the leveling, that is, the so-called focus leveling control is performed. In addition, the present invention uses the disclosure of the aforementioned U.S. patent as part of the description of this specification. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Although the illustration is omitted in FIG. 1, a pair of reticle calibration microscopes are provided above the reticle R (this microscope is, for example, JP-A-7176468 According to the publication and corresponding US Patent No. 5,646,413, etc., the projection optical system PL is used to simultaneously observe the reticle mark (not shown) on the reticle R and the reference mark on the reticle R, and use the exposure wavelength. It is composed of TTR (Through The Reticle) calibration optical system. The detection signals of these graticule calibration microscopes are supplied to the main control device 20 through a calibration control device (not shown). 24 This paper standard applies Chinese National Standard (CNS ) A4 specification (210 X 297 mm) 527636 A7 B7 V. Description of the invention (M) (Please read the notes on the back before filling this page) The aforementioned main control device 20 is composed of CPU, ROM, RAM and I / The O interface and other microcomputers (or workstations) are used to coordinately control the components of the exposure system 102. The main control device 20 is provided with an input / output device 30. The input / output device 30 includes a keyboard , Pointing device, display device, etc. of the mouse, etc. Through the input and output device 30, the operator performs various data input to create a processing program as a database for setting exposure conditions. This point will be described later. Main control device 20 In order to correctly perform the exposure operation, the overall control such as the synchronous scanning of the reticle R and the wafer W, the wafer stepping, and the exposure timing, etc. are printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The device 20, for example, performs scanning exposure, and manages the positions of the reticle board stage RST and the wafer stage WST based on the measurement of the laser jammers 16, 3, and at the same time, the next control of the wafer control system 19 An instruction for the synchronous movement of the wire plate stage RST and the wafer stage WST. Based on this instruction, the stage control system 19 monitors the measurement of the laser jammers 16, 31 while passing through the reticle drive unit η and the wafer drive The section 21 controls the position and speed of the reticle stage RST and the wafer stage WST, respectively, so that the reticle R passes the reticle stage RST to the illuminated area IAR in the ++ direction (or -Υ direction). Scan at speed Vr = V, and simultaneously make wafer W through wafer stage WST to expose area IA in a Y direction (or + Y direction) at speed Vw = No · V (0 is the wafer from the reticle R to the wafer W. The projection magnification of W) is used for scanning. Thus, in this embodiment, the reticle drive unit 11, the wafer drive unit 21, and the stage control system 19 are used to constitute each time of exposure. (CNS) A4 specification (210 X 297). 527636 A7 B7 V. Description of the invention (4) A synchronous drive device that drives the reticle board stage RST and the wafer stage WST in synchronization with the exposure light IL in a predetermined direction. (Please read the precautions on the back before filling in this page.) During stepping, the main control device 20 controls the position of the wafer stage WST while managing the position of the wafer stage WST according to the measurement of the laser jammer 31. The system 19 gives further instructions. The stage control system 19 controls the position of the wafer stage WST through the wafer driving unit 21 while monitoring the measurement volume of the laser jammer 31 according to this instruction. In addition, the main control device 20 continuously supplies the control information by monitoring the output of the integral sensor in order to give the wafer W with the target cumulative exposure amount determined according to the exposure conditions and the sensitivity of the anti-uranium agent during the scanning exposure. Go to the light source 1 to control the oscillation frequency (lighting timing) and light emission power of the light source 1, or adjust the amount of light irradiated to the reticle R by controlling the coarse energy adjuster. Furthermore, the main control device controls the aperture diaphragm plate of the lighting system, and further synchronizes with the movement information of the stage system to control the opening and closing movement of the movable marking plate shutter 5B. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Secondly, with regard to the exposure device 100 of this embodiment, the setting of the exposure conditions used to create a processing program before exposure will be briefly explained. Here, as an example, the setting of the exposure conditions at the time of double exposure for firing independent lines with very thin line widths on the wafer W will be described. For both exposures, first, as a first exposure, a phase conversion reticle with a fine line and gap (L / S) pattern (hereinafter, referred to as a "reticle R1") is used. Perform high-precision exposure. Secondly, as a second exposure, a reticle (herein, 26 paper sizes for convenience) was formed with a pattern that masked the pattern portion in the L / S pattern that was finally left (to be copied on the wafer). Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 527636 Printed by A7 B7, Consumer Cooperatives of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (^), called "Rolling Line R2") for exposure to Eliminate unnecessary portions of the L / S pattern and copy the target's independent lines on the wafer. Such details are disclosed in, for example, Japanese Unexamined Patent Publication No. 4-273427. First, the operator uses a mouse to select a double exposure on a main menu screen displayed on the display of the input / output device 30. In response to the selection instruction of the double exposure, the main control device 20 displays a designation screen of the name of the reticle for double exposure on the display. Next, the operator inputs "R1" and "R2" via the keyboard or the like as the name of the reticle used for the first exposure and the second exposure, respectively. Here, the data of the inputted reticle "Rl" and "R2" are stored in the first data storage area and the second data storage area of the RAM, respectively. When the input for specifying the name of the graticule is completed, when the operator presses the completion key by using the mouse, the main control device 20 switches the screen on the display to the next input designated screen, for example, to the lighting condition. Specify the screen. Next, the operator inputs data on the lighting conditions used for the first exposure and the second exposure using a keyboard or the like. Here, the lighting conditions used in the first exposure and the second exposure are, for example, input distortion lighting and normal lighting. The input data of the deformed lighting and general lighting are stored in the first data storage area and the second data storage area of the RAM, respectively. After that, the operator uses the mouse to press the finish key, and the main control device 20 displays the next input designation screen on the display, and then repeats the input of condition data and the switching of the screen in the same manner. When all the exposure data is When the input is completed, the processing program containing the setting data of the exposure conditions for each exposure is created in the RAM. Next, the behavior of the double exposure according to the above-mentioned processing procedure will be explained. 27 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----- ^ -------- pack- ------- Order --------- line (please read the notes on the back before filling this page) 527636 A7 B7 V. Description of the invention (> L). (Please read the precautions on the back before filling this page) As a prerequisite, the beginning of this exposure processing operation is based on the assumption that the wafer feeding on the wafer stage WST has been completed, and the enhanced optical system ALG enhanced full Wafer alignment EGA (enhanced global alignment) and other wafer-related preparations. The EGA is disclosed in detail in Japanese Patent Application Laid-Open No. 61-44429 and the corresponding U.S. Patent No. 4,780,617. The disclosure of this U.S. patent is used as a part of this specification. Next, the operator inputs an instruction to start exposure through the input / output device 30, and the exposure processing operation is started. Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs First, the main control device 20 reads out the exposure condition data stored in the first data storage area in the RAM (processing part of the P file), and according to the read out exposure conditions The data sets the exposure conditions. Specifically, the reticle R1 is mounted on the reticle carrier RST through a reticle feeder (not shown). In addition, according to the data read from the first data storage area in the RAM, the lighting conditions for the first exposure and other exposure conditions are set. Here, the setting of the lighting conditions includes, for example, the selection of the aperture stop on the aperture stop plate of the lighting system. In this case, the aperture diaphragm for anamorphic lighting is selected. Next, the main control device 20 reads data related to the exposure accuracy from the first data storage area in the RAM, for example, information about the reticle R1 (specifically, it is a phase conversion reticle, a very thin line width L / S pattern, etc.), as an example, perform reticle calibration in fine mode in the following manner. 28 ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public: 527636 A7 B7 V. Description of the invention (1) (Please read the notes on the back before filling this page). That is, the main control device 20, According to the measurement results of the laser jammers 16 and 31, the next instruction to the stage control system 19 is to move the reticle stage RST and the wafer stage WST to use a reticle to calibrate the microscope. At the same time, observe the position of the following marks, that is, it can simultaneously observe the predetermined marks formed by the reference mark plate on the wafer stage WST, such as four pairs of reticle calibration reference marks (hereinafter referred to as "the first reference mark"). The position of the pair of first reference marks and the corresponding image of the mark plate mark on the corresponding mark plate R1. Next, the main control device 20 uses a pair of mark plates to calibrate the microscope, and measures corresponding to one of the aforementioned predetermined ones. The amount of positional deviation of the pair of reticle mark images of the first reference mark. Next, the main control device 20, and the Nyung table control system 19 next instructs to synchronize the reference mark plate with the reticle R1 at a projection magnification ratio. Move towards Y, according to Sequentially measure the positional deviations of the reticle sign images relative to the other three pairs of reference signs. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and then the main control device 20, based on the position deviations of the four pairs of reticle signs Calculate the eccentricity, rotation angle, deformation, and angular deviation of the scanning direction relative to the position deviation of the reference mark plate and even the reticle R1 of the wafer stage WST, and temporarily store the calculation result in the RAM. Memory area. The calibration operation of the reticle is disclosed in detail in Japanese Unexamined Patent Publication No. 7-176468 and the corresponding U.S. Patent No. 5,646,412. In this case, the disclosure of this U.S. patent is used as a part of the description. The main control device 20 corrects the imaging characteristics of the projection optical system PL through an unillustrated imaging characteristic correction controller so that the above-mentioned distortion becomes 29 ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) ) ~ &Quot; 527636 A7 B7 V. The description of invention d is the smallest. (Please read the precautions on the back before filling this page) Calibration of the aforementioned marking board After that, the main control device 20 moves the wafer stage WST so that the reference mark plate is disposed directly below the calibration optical system ALG, and detects the position of the second reference mark on the reference mark plate relative to the detection center of the calibration optical system ALG. The deviation amount is based on the detection result of the position deviation amount, the measurement of the laser interference meter 31 at this time, and the reference line amount on the design to calculate the so-called reference line amount. In this way, the preparation for wafer W exposure is performed. After the operation is completed, the main control device 20 instructs the stage control system 19 to move the wafer stage WST and the reticle board stage RST according to the aforementioned wafer calibration results, baseline measurement results, and the like. According to this, the stage control system 19 controls the wafer release unit 21 based on the measurement of the laser jammer 31, and moves the wafer stage WST to the scanning start position for the first exposure irradiation of the wafer W, and According to the measurement of the laser jammer, the reticle drive unit 11 is controlled to move the reticle stage RST to the scanning start position. According to the instructions from the main control device 20, the stage control system 19 corrects the position of the reticle R1 so that the position deviation of the reticle R1 obtained during the calibration of the reticle is minimized. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Then, according to the instructions from the main control device 20, the stage control system 19 is used to start the reticle board stage RST and the wafer stage WST through the drive units 11 and 21. scanning. Then, the two carriers RST and WST reach the target scanning speed (scanning speed) respectively. From the time when the main control device 20 judges that the two carriers RST and WST have reached the synchronous setting state, the illumination is started by the ultraviolet pulse light from the light source 1. The pattern area of the graticule plate R, and from the beginning, the paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). . Before the scanning exposure, although the light source 1 has begun to emit light, the main control device 20 is used to synchronize the movement of the blades of the movable marking plate shutter 5B and the marking plate carrier RST to prevent the marking line from being synchronized. The irradiation of the ultraviolet light in the pattern area on the plate R1 is the same as that of a normal scanning stepper. Then, after sequentially illuminating different regions of the pattern region of the reticle R1 with ultraviolet pulsed light 'to fully illuminate the pattern region, the scanning exposure of the first exposure region on the wafer W is completed. Accordingly, the pattern of the reticle R1 is reduced by the projection optical PL to the first exposure irradiation area copied on the wafer W. At this time, during the above-mentioned scanning exposure / in accordance with the instruction from the main control device 20, the stage control system 19 is used to correct the scanning direction angle error of the reticle R1 obtained during the reticle calibration. In this way, after the scanning exposure of the first exposure illumination area is ended, according to the instruction from the main control device 20, the stage control system is used to perform stepping and movement between the exposure irradiation areas of the wafer stage WST through the wafer driving unit 21. To the scanning start position for exposing the second exposure irradiation area. During this stepping operation, the stage control system 19 measures the position displacement of the wafer stage WST in the X, Y, and 0z directions according to the measurement from the laser jammer 31 according to the instructions from the main control device 20 in real time. . In addition, the stage control system 19 controls the wafer driving unit 21 so that the XY position displacement of the wafer stage WST becomes a predetermined state based on the measurement result. In addition, the carrier control system 19 is based on the finger 31 from the main control device 20. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------ I- ------- Order --------- (Please read the notes on the back before filling this page) 527636 A7 B7 V. Description of the invention ((Please read the notes on the back before filling this page) ) Shows that the reticle drive unit 11 is controlled based on the information of the 0Z direction displacement of the wafer stage WST, and the reticle stage RST is rotationally controlled in a manner to compensate the rotation displacement error measured by the wafer W. After that, When the main control device 20 determines that the wafer stage WST determines the positioning of the scanning start position for performing the second exposure irradiation area, that is, the second exposure irradiation area on the wafer W is performed in the same manner as described above. The same scanning exposure. In this way, the scanning exposure of the exposure irradiation area on the wafer W and the stepping action for the next exposure irradiation are repeated, and the reticle R1 is sequentially copied on all the exposure target areas on the wafer. Pattern, ending the first exposure. 0 Intellectual Property Bureau employees of the Ministry of Economic Affairs Next, the main control device 20 prints out the exposure condition data (a part of the processing program file) stored in the second data storage area in the RAM, and sets the exposure conditions based on the read out exposure condition data. Specifically, In other words, the graticule plate R2 is mounted on the graticule plate stage RST through a graticule feeder (not shown). In addition, when the second exposure is performed based on the data read from the second data storage area in the RAM The setting of lighting conditions and other exposure conditions. Here, as the aperture stop on the aperture stop plate of the lighting system, the aperture stop for general lighting is selected. Second, the main control device 20 is based on the internal RAM. Data related to exposure accuracy read out in the second data storage area, such as information about the graticule plate R2 (specifically, it is a general graticule plate, which is a mark that does not exist except for parts and does not require pattern removal. (Line board, etc.), and perform fast mode reticle calibration which simplifies the aforementioned fine mode reticle calibration. 32 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 527636 A7 B7 5 , Instructions (wh (please read the precautions on the back before filling this page), that is, the main control device 20 instructs the stage control system 19 based on the measurement results of the laser jammer 16 '31, using a pair of The reticle calibration microscope moves the reticle stage RST and the wafer stage WST through the reticle drive unit Η and the wafer drive unit 21 so that they are located on the reference mark plate on which the wafer stage WST can be viewed simultaneously. The position of the first reference mark formed by, for example, a predetermined one of the four pairs of the first reference marks, and the corresponding position of the mark plate mark image on the corresponding line plate R2 is formed. Next, the main control device 20 uses a pair of marks. The wire plate microscope measures the position deviation of the pair of reticle mark limits corresponding to the predetermined pair of first reference marks. Then, the main control device 20 calculates the deviation and rotation angle of the position deviation amount of the image projected from the reticle R2 of the wafer stage WST from the position deviation of the pair of reticle marks, and The calculation result is stored in a temporary storage area in the RAM. The calibration operation of the reticle is disclosed in detail in Japanese Patent Application Laid-Open No. 7-176468 and corresponding U.S. Patent No. 5,646,413. The disclosure of the U.S. patent is used in this case as part of this specification. After the calibration of the above-mentioned reticle, the baseline measurement is not performed, and the reticle R2 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is used, and the second exposure is performed in the same manner as described above in a step-and-scan manner. According to this, all the exposure target areas of the pattern of the reticle R1 have been reproduced on the wafer W with good accuracy, and the pattern of the reticle R2 has been duplicated. With the above double exposure, each exposure irradiation area on the wafer is separately Form an independent line with extremely thin line width, and develop the wafer W with a developing device. 33 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm), 527636 A7 B7. 5. Description of the invention on the wafer On each of the above exposed areas, an image of a uranium-resistant agent with extremely fine line width and independent lines is formed. (Please read the precautions on the back before filling this page) Here, in order to avoid the above description is too complicated, although the description is intentionally omitted, the exposure device 100 of this embodiment is borrowed from the main control device 20 to change the first exposure 2. In the second exposure, the maximum movement speed (and acceleration / deceleration speed) of the wafer stage WST during the stepping between the exposure areas, and the tolerance of the position error determined by the positioning determination. This is described in further detail below. In FIG. 2, the time variation (a) of the speed between the exposure steps during the first exposure of the wafer stage WST and the time steps between the exposure steps during the second exposure are shown in outline. (B). In addition, FIG. 3A shows the time variation of the position error of the target target 値 corresponding to the case of (a) in FIG. 2, and FIG. 3B shows the time after the relative deceleration corresponding to the situation in (b) of FIG. 2 is completed. The time variation of the position error of the target is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. It can be seen from Figure 2 that the maximum moving speed (stepping speed) when stepping between exposures is faster, and at the second exposure, the exposure The step time between irradiations is significantly shorter. Therefore, if the step speed of the wafer stage WST is increased, the time required for the exposure processing (exposure processing time) of the wafer W can be shortened. However, since increasing the step speed means moving at a higher speed within a limited distance (distance between exposure and irradiation), it is obvious from Fig. 2 that the absolute value of acceleration / deceleration becomes larger. As a result, comparing FIG. 3A and FIG. 3B, it can be seen that the vibration during positioning becomes larger. Therefore, if it is assumed that, for example, the position error of the target 确定 determined by positioning determination (the allowable en of en0 (usually, determined based on standard deviation, that is, based on RMS) is the same 値 A, the step speed is For high-speed users, the positioning is to 34. The Chinese standard (CNS) A4 specification (210 X 297 mm) is applicable. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 527636 A7 B7. The determination time) must be longer. Therefore, the main control device 20 is based on the required exposure accuracy data, such as the information about the reticle R1 and the information about the reticle R2. During the second exposure, the movement state of the wafer stage WST is changed to the state shown in FIG. 2, and the allowable threshold of the above-mentioned position error (err) during the second exposure is changed to “B” illustrated in FIG. 3B. Based on this, as shown in FIG. 3B, the positioning at the second exposure is completed quickly T1. As a result, comparing FIG. 3A and FIG. 3B, it can be seen that the positioning determination time is not increased, but can be shortened compared with the first exposure. Step time at the second exposure. In addition, the main control device 20 is the same as the above, and according to the required exposure accuracy data, for example, based on the information about the reticle R1 and the information about the reticle R2, the first exposure f and the second exposure are performed. At this time, change the movement state (scanning speed, acceleration / deceleration) of the two stages RST and WST used for exposure. Of course, compared with the first exposure, the scanning speed at the second exposure is increased. When the scanning speed is increased At this time, the exposure time (scanning exposure time) is significantly shortened. At this time, as described above, as the lighting conditions, the distortion lighting is used in the first exposure and the normal lighting is used in the second lighting, so the second lighting At that time, the illuminance of the wafer surface (image surface) (the intensity of the energy beam irradiated on the wafer W) becomes higher. Therefore, the main control device 20 sets the scanning speed at the second exposure time to be high according to the illuminance change. The desired cumulative exposure is given to each point on the wafer W. In addition, when the scanning speed is increased, because the moving stroke of the reticle board stage RST is limited, it is necessary to increase the number Add and subtract 35 sheets Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) ------------- installation -------- order --------- line (Please read the precautions on the back before filling this page) 527636 A7 B7 V. Description of the invention (please read the precautions on the back before filling this page) Speed. Therefore, the target speed after the acceleration of the two carrier RST and WST ends The error (thus, the error of the target position) becomes larger. As a result, when the end of the synchronization determination is judged according to the allowable threshold of the same position, the time when the two carriers RST and WST reach the isochronous synchronization state (synchronization determination time) Therefore, the main control device 20 increases the allowable error of the position error that determines the synchronization determination in response to an increase in the scanning speed, and further does not increase the synchronization determination time at the second exposure as compared with that at the first exposure. As described above, according to the exposure apparatus 100 of this embodiment, when the second exposure is repeated on the same wafer W, for example, in order to burn extremely fine independent lines on the wafer W, each exposure is irradiated on the wafer W. When the area is double-exposed using the aforementioned reticle R1, R2, the main control device 20, according to the exposure intensity required for each exposure (in the embodiment, for example, it is based on the reticle R1, R2 information to judge), to change: a. Relative to the movement state (step speed, acceleration and deceleration) of the wafer stage WST used to determine the step between exposure and irradiation, and the scan to the next exposure irradiation area starts Position error of target (err) allowable; Positioning of the target; Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs b. Decided to be the movement state (scanning speed, acceleration / deceleration) of the two carriers RST and WST during exposure And the tolerance of the position error determined synchronously in response to the increase of the scanning speed; c. The setting of the fine mode or fast mode of the reticle calibration. At this time, the main control device 20, regardless of its control factors, is heavier for resolution than efficiency for the first exposure that requires stricter exposure accuracy. 36 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 527636 A7 B7 V. State of the Invention For the exposures that require less precise exposure, on the contrary, the efficiency is more important than the resolution. (Please read the notes on the back before filling out this page) Borrowing the above a. Position error (err) with respect to the target position determined by the positioning of the wafer stage WST (step speed, acceleration / deceleration) used to determine the step between exposure irradiations and the positioning of the scan start position to the next exposure irradiation area As described above, as described above, since the positioning time is not increased, the step time at the second exposure can be shortened compared to the first exposure time. Therefore, the exposure processing time can be shortened as a result. However, it is not necessary to change the speed and acceleration / deceleration (moving state) of the wafer stage WST when considering the reduction of the exposure processing time and the increase of the positioning determination time caused by the increase of the step speed. ) In order to improve the overall efficiency, Li Heng uses the same 値 as the target for determining the above positioning determination. The relative position error (err) is allowed. It can also be printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs or in the first section. During the second exposure and the second exposure, the speed and acceleration / deceleration (moving state) of the wafer stage WST are not changed, and only the position error during positioning can be changed. When the tolerance of the position error is increased, the next operation can be started faster because the positioning status can be determined in a shorter time (for example, the scanning operation of the reticle on-board stage RST and the wafer stage WST for exposure) ), So the overall exposure processing time can be shortened. Also, borrow the above b. Determine the change of the movement state (scanning speed, acceleration / deceleration) of the two stages RST and WST during the exposure and the allowable change of the position error determined synchronously in response to the increase of the scanning speed. The synchronous determination time is increased by 37 compared with the first exposure. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 527636 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Explanation (》 () 'The scan speed at the second exposure can shorten the scan exposure time. However, it is not limited to this, as long as the scan exposure processing time reduction and synchronization determination time caused by the increase in scan speed are considered Add to change the moving state (speed and acceleration / deceleration) of the wafer stage during WST scanning to improve the overall efficiency, even if the same frame is always used as the allowable frame for judging the position error (err) determined by the above synchronization. , Do not change the scanning speed of reticle board stage RST and wafer stage WST, etc., but increase the position error used to determine the synchronization determination of the two stages Zhi also allowable. In this case, i.e., shorter time to determine the synchronized state, it is possible to quickly start the next exposure operation (exposure action of the exposure light beam IL), and the overall exposure time can be shortened. By the above-described C. Compared with the first exposure, the time required for the second calibration of the reticle calibration is significantly reduced. Compared with the fine-line reticle calibration performed during each exposure, it can be improved. effectiveness. The calibration of the reticle is performed because the relative position of the reticle and the wafer overlaps. Therefore, in this embodiment, the main control device 20 uses the means of changing the reticle calibration mode as a result of changing the exposure. The relative position of the timing mark plate pattern and the wafer overlaps with accuracy. According to the exposure apparatus 100 of this embodiment, as a. Various efficiency control factors of ~ c · are changed by the main control device 20 according to the required exposure accuracy in the aforementioned manner. Therefore, when performing the above double exposure on the same wafer, the exposure is controlled according to the same efficiency control factor every time Compared with the situation of the system 102, the efficiency can be obviously improved. On the one hand, since the second exposure is not so high in the required exposure accuracy, in other words, 'only some kind of 38 ----- ^ -------- install is allowed -------- Order --------- line (please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (21 × X 297 mm) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by a consumer cooperative 527636 A7 B7 V. Description of the invention (&y;) When the degree of exposure accuracy is reduced, the efficiency control factor is changed in a manner that places greater emphasis on efficiency, so the result is that it can maintain sufficient accuracy in terms of exposure accuracy. Again, the above a. ~ C. For the efficiency control factor, for example, the above-mentioned c. Factors change. That is, in the first exposure and the second exposure, it is also possible to change only at least one efficiency control factor related to the exposure operation (other than calibration). That is, the above description is made on the double exposure for firing an independent line pattern with extremely fine line width on the wafer W, but it is not limited to this. Similarly, as long as it includes the first In the case of the double exposure and the second exposure for specifying the pattern shape, the exposure device 100 of this embodiment can substantially maintain the exposure accuracy and improve the efficiency in substantially the same manner as described above. .  As another example of the aforementioned double exposure method, for example, there is also the following exposure method, that is, using a longer L / S or independent line than the set 値 (the 要 to be finally obtained) as the first pattern, and copying the first In the case of 1 pattern, anamorphic lighting or phase-shift graticules are used to improve the resolution and depth of focus (DOF). In order to remove small portions of the two ends of the line patterns, the frame pattern corresponding to each line pattern is used as The second pattern is reproduced under normal lighting conditions. This exposure method is disclosed in, for example, Japanese Patent Application Laid-Open No. 10-284377 and the corresponding U.S. Patent Application No. 055,949 (application date: April 7, 1998), etc. The disclosure of this U.S. patent application is referred to as part of this specification Record. As another example, for example, it is disclosed in Japanese Patent Application Laid-Open No. 2-166717 and the like. In order to burn a pattern with a protruding small corner shape onto a wafer, 39 paper standards are applicable to the Chinese National Standard (CNS) A4 standard (210 X 297 public love) ------------- -------- Order --------- (Please read the notes on the back before filling this page) 527636 A7 B7 V. Description of the invention (> /) (Please read the precautions on the back before filling in this page) The proposed optical short-range correction pattern (〇PC, optical piOximity correction pattern). The 〇PC is fired not only for the circuit pattern 'required for the first exposure, but also for the unnecessary pattern. In the second exposure, although the unnecessary pattern is eliminated, the accuracy of the first exposure is not required for the second exposure. Therefore, similar to the above, changing the efficiency control factor (changing the control accuracy) according to the required exposure accuracy can shorten the time required for the second exposure and improve the efficiency. In addition, although the above embodiment has described the case of double exposure on the same wafer, the method of changing the efficiency control factor (changing the control accuracy) according to the required exposure accuracy can also be fully applied to triple exposures or more. Multiple exposures should not be specified here. In addition, the description so far has been described in the case where the present invention is applicable to multiple exposures such as double exposure. However, if the exposure accuracy required for each exposure is different, the patterns are bonded and copied on the same wafer (substrate). The present invention can also be applied to the joint exposure of adjacent regions on the same surface. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In addition, if the exposure accuracy required for each (each layer) exposure is different, the first exposure and the second exposure can be for different layers of the same wafer (substrate). exposure. At this time, as in the foregoing, the first exposure is used to specify the pattern size, and the second exposure is used to specify the pattern shape. In this case, as long as the control accuracy at the time of the second exposure (based on the above embodiment, for example, due to the aforementioned a. ~ C. The efficiency control factor is changed. The accuracy can be set lower than the control accuracy at the first exposure. In this way, similar to the above-mentioned embodiment, it is possible to maintain sufficient exposure accuracy while improving efficiency. 40 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 527636 _ B7_ V. Description of invention ((Please read the notes on the back before filling this page) For example, when exposing different layers of the same wafer, the main control device 20 can change the wafer stage WST of the wafer stage during the exposure step in the same way as in the above embodiment, depending on the exposure accuracy required for the exposure of each layer. At least one of the movement status and the position error tolerance during positioning, the scanning status of the graticule board stage RST and wafer stage WST (scanning speed, acceleration and deceleration) during scanning exposure and the corresponding determination of wafer surface illuminance and synchronization The determined position error allows at least one of them, or the aforementioned calibration mode of the on-board stage, or all of them. It can also replace or add the main control device 20 for exposure after the second layer. Change of required exposure accuracy If the exposure of each layer advances f, the number of sampling exposures or sampling marks of EGA will be described. At this time, when the required exposure accuracy is stricter, increase EGA The number of sampling exposure exposures is not so strict Bf. If the number of sampling exposure exposures is reduced, it will not be affected by the required exposure accuracy. Compared with the case where the number of sampling exposure exposures with the same number is constantly required, Improve the efficiency. Also, it can fully maintain the exposure accuracy. At this time, the relative position alignment of the reticle and the wafer is changed due to the change in the number of exposure exposures of the EGA sampling. It is self-explanatory. Also, a plurality of Wafer calibration mode (for example, EGA mode including weighting the position information based on the EGA mode and the weight of the distance between the exposure exposures that should be calculated for each sample exposure during the exposure exposure), and change the position according to the aforementioned exposure accuracy. Instead of the above description or adding the main control device 20, depending on the required exposure accuracy, change the energy non-uniformity allowance of the pulsed light emitted from the light source 1 to the wafer w at each exposure, and the repetition frequency At least one of them can also be used as an efficiency control factor. If the energy intensity of the pulse light is not uniform 41 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) " Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 527636 A7 B7 V. Description of the invention ($ 〇) The allowable increase of the nature can shorten the adjustment time of the weight. Also, If the repetition frequency becomes higher, the power will increase accordingly, and re-measurement is required, but if the required exposure accuracy is low, even if the re-measurement is omitted, there is no hindrance. Therefore, the omission of re-measurement and the repetition of lift The frequency increases the power (in the case of a scanning exposure device, the scanning speed must be adjusted accordingly), which can shorten the exposure time. In addition, although the above embodiment is based on the required exposure accuracy of the main control device 20, The case of changing the foregoing efficiency control factors according to one's own judgment during the second exposure has been described, but the present invention is not limited thereto. For example, as in the above embodiment, when the control system has a processing program file that sets various parameters for controlling the exposure system, it can also be set in the processing program file and set individually. Parameters related to the aforementioned control factors used in each exposure. In this case, the operator individually sets various parameters used for each exposure in the processing program file in advance, and the control system controls the exposure system according to the processing program file. Based on this, according to the required exposure accuracy, The above control factors are changed at each exposure. Therefore, it is not necessary to re-create a complex processing program (software) including a judgment program, and it is sufficient to simply change the existing processing program file. Moreover, although the above embodiment is a scanning type that is suitable for the step scanning method according to the present invention, The case of the exposure device has been described, but the scope of application of the present invention is not limited to this, and it is also very suitable for a stationary exposure type exposure device such as a stepper. In the case of a stepper, instead of the efficiency control factors explained so far (except for those related to scanning) or at the same time, the control system will change each time the 42 scales apply the Chinese National Standard (CNS) A4 specification (210 X 297) (Mm) " ------------- install -------- order --------- line.  -(Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 527636 A7 B7 V. Description of the invention (1ψ /) Focus deviation during exposure is acceptable. For example, when the required exposure accuracy is strict, the allowable focus deviation amount during exposure becomes very small. If the required exposure precision is low, the allowable focus deviation amount during exposure will not be affected even if it is slightly larger. Therefore, 'control system, when the required exposure accuracy is stricter', correspondingly reduce the focus deviation allowance during exposure, and when the required exposure accuracy is not so strict, set the focus deviation allowable during exposure to a larger value. . As a result, compared with the former, the focus setting time for the latter becomes shorter. Regardless of the required exposure accuracy, the exposure processing time can be shortened compared with the case where the focus deviation tolerance during exposure is set to a certain value. At this time, sufficient exposure accuracy can be maintained. If it is a stepper, for example, Japanese Patent Publication No. 7-122473 and corresponding US Patent Application No. 240,599 (filed on February 1, 1999). It is revealed that there is a calibration method that uses the same method as EGA on the reticle (reticle) side, and uses a projection optical system to obtain the reticle magnification and rotation. However, depending on the required exposure accuracy, it can be changed. The number of sampling marks of the EGA can also change the relative position alignment accuracy of the photomask and the substrate. In this case, the disclosure of the above-mentioned U.S. patent application is used as a part of the description. In the case of a stepper, if the intensity of the energy beam irradiated on the substrate (irradiance on the substrate) is increased, the exposure time to the substrate can be shortened, so the efficiency can be improved by shortening the exposure processing time. When changing the illuminance on the substrate, if the energy beam source is a pulsed laser light source, it can also be performed such as: the repetition frequency is set to a higher frequency, increasing the energy of each pulse from the energy beam source, or changing the energy Reduction of the light reduction element in the optical path between the beam source and the substrate 43 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----------------- ---- Order ---------, ψ I (Please read the precautions on the back before filling this page) 527636 A7 B7 Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (ψΐ) Photometric etc. In addition, the present invention can also be applied to an X-ray exposure apparatus and the like in a proximity method that does not use a projection optical system. In addition, although the above embodiment has been described in terms of the present invention being applicable to an exposure apparatus using ArF excimer laser light (wavelength 193 nm) or F2 laser light (wavelength 157 nm) as the exposure light IL, the present invention is not limited to this. The invention is also very suitable for an exposure device using vacuum ultraviolet light such as Kn laser light having a wavelength of 146iim, An laser light having a wavelength of 126nm, or an EUV exposure device using EUV light having a soft X-ray region with a wavelength of 5 to 30nm. In addition, in the present invention, as the energy beam, a single-wavelength laser light from an infrared band or a visible light band emitted from a DFB semiconductor laser or an optical fiber laser can also be used, for example, a doped bait (or both an ear and a mirror). ) Fiber amplifier to amplify, using nonlinear optical crystals to convert its wavelength to high harmonics of ultraviolet light. For example, set the oscillation wavelength of a single-wavelength laser at 1. 51 ~ 1. In the range of 59μιη, the output wavelength is 8 times higher harmonics in the range of 189 ~ 199nm, or the wavelength is 10 times higher harmonics in the range of 151 ~ 159nm. In particular, the oscillation wavelength is 1. In the range of 544 ~ 1 · 553μιη, 8 times higher harmonics in the range of 193 ~ 194nm can be obtained, that is, ultraviolet light with the same wavelength as ArF excimer laser light can be obtained, and the oscillation wavelength is in In the range of 57 ~ 1.58μm, 10 times higher harmonics in the range of 157 ~ 158nm can be obtained, that is, ultraviolet light with approximately the same wavelength as F2 laser light. Also, if the oscillation wavelength is set to 1. 03 ~ 1. In the range of 12μπι, it can output 7 times higher harmonics in the range of 147 ~ 160nm, especially set the oscillation (please read the precautions on the back before filling this page) This paper size applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 527636 A7 B7 V. Description of the invention (wavelength at 1. 099 ~ 1. In the range of 106 μιΓ, the disc obtains 7 times higher harmonics in the range of 157 to 158 μιη, that is, ultraviolet light with approximately the same wavelength as F2 laser light. At this time, as a single-wavelength laser, a mirror-doped fiber laser is used. It should be noted that the projection optical system and the illumination optical system shown in the above embodiments are merely examples, and the present invention is not limited to this. For example, the projection optical system is not limited to a refracting optical system, and a reflective system composed of only reflective optical elements or a reflective refracting system having reflective optical elements and refractive optical elements may be used. In addition, the present invention can only be used in an exposure device used for manufacturing a semiconductor element, and can also be used in: an exposure device used for manufacturing a display device including a liquid crystal display element, etc., in which an element pattern is copied on a glass substrate, and a thin film magnetic head Exposure devices used to copy element patterns on ceramic wafers, and exposure devices used in the manufacture of imaging elements (CCD, etc.), micro-machines, DNA wafers, etc., and the manufacture of photomasks, reticles, etc. In addition, an illumination optical system composed of a plurality of lenses and a projection optical system PL are incorporated into the main body of the exposure device to perform optical adjustments, and a reticle board stage RST and a wafer stage WST composed of most mechanical parts are assembled in the exposure apparatus. The exposure device of the present invention, such as the exposure device 100 of the above embodiment, can be manufactured by further comprehensive adjustment (electric adjustment, operation confirmation, etc.) of the body, connection wiring, and piping. It is also preferable that the exposure device can be manufactured in a clean room where temperature and cleanliness are controlled. [Element manufacturing method] Next, the use of the above-mentioned exposure device 100 and its exposure in the photolithography process will be explained. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ---------- ----------- Order · -------- * 1 (Please read the notes on the back before filling in this page) 527636 A7 B7 V. Description of the invention (tf) Light method element Embodiment of the manufacturing method. Fig. 4 is a flowchart showing an example of manufacturing a display element (semiconductor wafer, liquid crystal panel, CCD, thin-film magnetic head, micromachine, etc., such as 1C and LSI). As shown in FIG. 4, first, in step 201 (design step), the function and performance design of the element (for example, the circuit design of a semiconductor element, etc.) is performed to perform pattern design for realizing its function. Next, in step 202 (photomask making step), a photomask is formed to form a designed circuit pattern. On the other hand, in step 203 (wafer manufacturing step), a wafer is manufactured using a material such as silicon. Next, in step 204 (wafer processing step), the mask and wafer prepared in steps 201 to 203 are used. As described later, the lithography technique is equivalent to forming an actual circuit on the wafer. Next, in step 205 (component assembly step), the device assembly is performed using the wafer that was processed in step 204. This step 205 'may include steps such as a cutting step, a wire drawing step, and a packaging step as needed. Finally, in step 206 (inspection step), a check of the operation confirmation test of the component made in step 205, such as a durability test, is performed. After the above steps are completed, the components can be shipped. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 5 shows a detailed example of the above step 204 when it is displayed as a semiconductor device. In FIG. 5, step 211 (oxidation step) is to oxidize the wafer surface. Step 212 (CVD step) is to form an insulating film on the surface of the wafer. Step 213 (electrode formation step) is to form an electrode on the wafer by vapor deposition. Step 214 (ion implantation step) is implanting ions on the wafer. The above steps 211 to 214 constitute processing steps before each stage of wafer processing, and can be selectively implemented in each stage as necessary processing. 46 Standard Applicable Standard (CNS) A4 specification (210 x 297 mm) 527636 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs, V. Description of each stage of wafer processing. Way for post-processing steps. In the post-processing step, first, in step 215 (photoresist forming step), a photosensitive agent is coated on the wafer. Next, in step 216 (exposure step), the lithographic system (exposure device) described above is used to copy the circuit pattern of the photomask onto the wafer. Secondly, the exposed wafer is developed in step 217C (step 217C), and in step 218 (uranium etching step), the exposed members other than the photoresist remaining portion are removed by etching. Thereafter, in step 219 (photoresist removal step), the photoresist not used after the etching is removed. These pre-processing steps and post-processing steps are repeated to form multiple circuit patterns on the wafer. According to the device manufacturing method of the present embodiment described above, in the exposure step (step 216), the exposure apparatus and the exposure method of the above embodiment are used for exposure, so that it can be carried out while maintaining sufficient exposure accuracy and improving efficiency. exposure. Therefore, the yield of micro-components with fine patterns will not be reduced, and the efficiency will be improved to improve the productivity. The above-mentioned embodiments of the present invention are merely preferred embodiments of the present invention, and are not intended to limit the scope of implementation of the present invention; that is, all equivalent changes and modifications made in accordance with the patent application for the present invention are within the scope of the present invention. Covered. 47 --------------------- Order --------- 罨 V (Please read the precautions on the back before filling this page) This paper size Applicable to China National Standard (CNS) A4 (21 (^ 297)

Claims (1)

527636 A8 B8 C8 D8 t、申請專利範圍 1 · 一種曝光方法，係對同一基板至少重複進行兩次曝 光，其包含： (請先閱讀背面之注意事項再填寫本頁) 對應所要求之第1曝光精度、以第1控制精度對基板 進行第1曝光之步驟； 對應所要求之與前述第1曝光精度不同之第2曝光精 度、以第2控制精度對基板進行第2曝光之步驟。 2·如申請專利範圍第1項之曝光方法，其中前述第1 曝光與第2曝光，係對前述基板不同層之曝光。 3 ·如申請專利範圍第1項之曝光方法，其中前述第1 曝光與第2曝光，係對前述基板同一層之曝光。 4·如申請專利範圍第3項之曝光方法，其中前述第1 曝光與第2曝光，係將圖案g合複製於前述基板上相鄰之 區劃區域的接合曝光。 5 ·如申請專利範圍第3項之曝光方法，其中前述第1 曝光與第2曝光，係將圖案重疊複製於前述基板上同一區 域的多重曝光。 經濟部智慧財產局員工消費合作社印製 6·如申請專利範圍第1項之曝光方法，其中前述第1 曝光，係對前述基板進行之用以規定圖案尺寸的曝光；前 述第2曝光，係對前述基板進行之用以規定圖案形狀的曝 光。 7·如申請專利範圍第6項之曝光方法，其中前述第2 控制精度係設定的較第1控制精度爲低。 8 ·如申請專利範圍第6項之曝光方法，其中前述第1 曝光與第2曝光，係對前述基板不同層之曝光。 1 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 527636 A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 9·如申請專利範圍第6項之曝光方法，其中前述第1 曝光與第2曝光，係對前述基板同一層之曝光。 1〇 ·如申請專利範圍第6項之曝光方法，其中前述第 1曝光與第2曝光，係將圖案接合複製於前述基板上相鄰 之區劃區域的接合曝光。 11 ·如申請專利範圍第6項之曝光方法，其中前述第 1曝光與第2曝光，係將圖案重疊複製於前述基板上同一 區域的多重曝光。 12 ·如申請專利範圍第1項之曝光方法，其中前述控 制精度至少包含下列之一：將前述基板上之複數個區劃區 域定位於既定之基準位置時前述基板之移動狀態，前述定 位時之位置誤差容許値，形$有複製於前述基板之圖案的 光罩與前述基板之相對位置對準精度，將前述光罩與基板 同步移動於既定方向時之移動狀態，以及用以決定前述同 步移動時之設定的容許値。 13 · —種曝光裝置，其特徵在於，具備： 曝光系統，係將能量束照射於形成有圖案之光罩，以 將前述光罩之圖案複製於基板載台所保持之基板； 控制系統，係用以整體的控制前述曝光系統，且在對 同一基板重複進行至少二次曝光時，視每次曝光所要求之 曝光精度，變更有助於效率之前述曝光系統之控制因素。 14 •如申請專利範圍13之曝光裝置，其中，前述控制 系統在對同一基板之不同層進行曝光時’係視各層曝光所 要求之曝光精度’變更有助於效率之前述曝光系統之控制 2 本紙張尺度適用中國國家標準（CNS A4規格（210 X 297公潑） --------------------I ^ ---------線 ► 一 ' (請先閲讀背面之注意事項再填寫本頁) 527636 A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 因素。 15 ·如申請專利範圍第13項之曝光裝置，其中，前述 控制系統在對同一基板之同一層進行至少二次曝光時，係 視每次曝光所要求之曝光精度，變更有助於效率之前述曝 光系統之控制因素。 16 ·如申請專利fe圍第15項之曝光裝置，其中前述控 制系統係控制前述曝光系統’作爲對前述同一基板之同一 層的至少二次曝光，進行將圖案接合複製於前述基板上之 相鄰區域的接合曝光。 17 ·如申請專利範圍第15項之曝光裝置，其中前述控 制系統係控制前述曝光系統，作爲對同一基板之同一層的 至少二次曝光，進行將圖案零疊複製於前述基板上之同一 區域的多重曝光。 18 ·如申請專利範圍第17項之曝光裝置，其中前述控 制系統，爲進行至少包含對同一基板之用以規定圖案尺寸 之第1次曝光、與用以規定圖案形狀之第2次曝光的前述 多重曝光，而進行前述曝光系統之控制。 19 ·如申請專利範圍第13項之曝光裝置’其中以前述 控制系統變更之前述控制因素，至少包含將前述基板上之 複數個區劃區域依序定位於既定之基準位置時，前述基板 載台之移動狀態與前述定位時之位置誤差容許値之一方。 20 ·如申請專利範圍第13項之曝光裝置，其中’前述 曝光系統具備將從前述光罩射出之前述能量束投射於前述 基板之投影光學系統；以前述控制系統變更之前述控制因 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------i 1-----訂·---丨 — ! 線 •* (請先閱讀背面之注意事項再填寫本頁) 527636 A8 B8 C8 D8 六、申請專利範圍 素，包含前述各次曝光時之焦點偏差容許値。 (請先閱讀背面之注意事項再填寫本頁) 21 ·如申請專利範圍第13項之曝光裝置，其中，前述 曝光系統具備脈衝雷射光源以作爲射出前述能量束之能量 束源；以前述控制系統變更之前述控制因素，至少包含前 述各次曝光時從前述脈衝雷射光源射出照射於前述基板之 脈衝光的能量強度、及重複頻率之一方。 22 ·如申請專利範圍第13項之曝光裝置，其中以前述 控制系統變更之前述控制因素，包含前述光罩圖案與前述 基板之相對位置對準精度。 23 ·如申請專利範圍第22項之曝光裝置，其中以前述 控制系統變更之前述控制因素，係前述光罩及前述基板之 至少一方的校準模式。 _ 24 ·如申請專利範圍第22項之曝光裝置，其中以前述 控制系統變更之前述控制因素，係前述基板校準時之取樣 曝光照射數及取樣標誌數之至少一方。 25 ·如申請專利範圍第22項之曝光裝置，其中以前述 控制系統變更之前述控制因素，係前述光罩校準時之取樣 標誌數。 經濟部智慧財產局員工消費合作社印製 26 ·如申請專利範圍第13項之曝光裝置，其中，前述 曝光系統具備用以保持前述光罩之光罩載台，與同步驅動 裝置(係在前述各次曝光時，相對前述能量束將前述光罩載 台與前述基板載台同步驅動於既定方向）； 以前述控制系統變更之前述控制因素，至少包含前述 各次曝光時則述兩載台之移動狀態及視該移動狀態照射於 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 前述基板之前述能量束的強度，與用以決定前述兩載台之 同步完成之位置誤差的容許値之一方。 27 ·如申請專利範圍第13項之曝光裝置，其中，前述 控制系統，具有設定了用以進行前述曝光系統控制之各種 參數的處理程式檔案，前述處理程式檔案能個別設定用以 進行前述各次曝光之參數値。^ 28 · —種元件製造方法，_^微影步驟，該微影步 驟係使用申請專利範圍第1項之;方法。 29 · —種元件製造方法，微影步驟，該微影步 驟係使用申請專利範圍第13項之曝光裝置來進行曝光。 30 · —種曝光方法，係相對能量束分別移動第1及第 2物體，透過前述第1物體以前述能量束對前述第2物體 進行掃描曝光，其特徵在於·· 使用對前述第2物體之複製精度不同之圖案，對前述 第2物體上之同一層進行複數次之掃描曝光，且視前述複 製精度，於前述不同之圖案間使前述掃描曝光之控制因素 不同。 31 ·如申請專利範圍第3〇項之曝光方法，其中，前述 控制因素包含有助於效率之因素。 32 ·如申請專利範圍第30項之曝光方法，其中，前述 控制因素包含有關前述掃描曝光之前述第1及第2物體之 移動控制因素。 33 ·如申請專利範圍第30至32項中任一項之曝光方 法’其係分別使用前述不同圖案以步進掃描方式對前述第 5 __ -------------^--------fr------- I »-* (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 527636 A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 2物體上之各區域進行多重曝光，前述控制因素，係前述 不同圖案中前述複製精度較第1圖案爲低之第2圖案，有 關前述第2物體之掃描曝光效率，係設定得較前述第1圖 案爲高。 34 · —種元件製造方法，其包含微影步驟，前述微影 步驟，係於前述第2物體上之複數層分別形成圖案，且前 述複數層之至少一者，係使用申請專利範圍第33項之曝光 方法。 35 · —種曝光裝置，係相對能量束分別移動第1及第 2物體，透過前述第1物體以前述能量束對前述第2物體 進行掃描曝光，其特徵在於，具備： ‘控制系統，以在使用對前述第2物體之複製精度不同 之圖案，對前述第2物體上之同一層進行複數次之掃描曝 光時，視前述複製精度於前述不同之圖案間使前述掃描曝 光之控制因素不同。 36 ·如申請專利範圍第35項之曝光裝置，其中，係分 別使用前述不同圖案以步進掃描方式對前述第2物體上之 各區域進行多重曝光，前述控制因素，係前述不同圖案中 前述複製精度較第1圖案爲低之第2圖案，有關前述第2 物體之掃描曝光效率，係設定得較前述第1圖案爲高。 37 · —種元件製造方法，其包含微影步驟，前述微影 步驟，係於前述第2物體上之複數層分別形成圖案，且前 述複數層之至少一者，係使用申請專利範圍第36項之曝光 裝置進行前述至少一層之多重曝光。 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） ------^-------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁)527636 A8 B8 C8 D8 t, patent application scope 1 · An exposure method is to repeat the exposure of the same substrate at least twice, which includes: (Please read the precautions on the back before filling out this page) Corresponding to the required first exposure A step of performing a first exposure on the substrate with a first control accuracy; and a step of performing a second exposure on the substrate with a second control accuracy corresponding to a required second exposure accuracy different from the first exposure accuracy described above. 2. The exposure method according to item 1 of the patent application range, wherein the first exposure and the second exposure are exposures to different layers of the substrate. 3. The exposure method according to item 1 of the scope of patent application, wherein the first exposure and the second exposure are exposures to the same layer of the substrate. 4. The exposure method according to item 3 of the scope of patent application, wherein the first exposure and the second exposure are joint exposures in which the pattern g is copied and copied to adjacent divisional areas on the substrate. 5 · The exposure method according to item 3 of the patent application range, wherein the first exposure and the second exposure are multiple exposures in which the pattern is duplicated on the same area on the substrate. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs6. For the exposure method of the first scope of the patent application, the first exposure is the exposure of the substrate to specify the pattern size; the second exposure is the The substrate is exposed to a predetermined pattern shape. 7. The exposure method according to item 6 of the scope of patent application, wherein the aforementioned second control accuracy is set lower than the first control accuracy. 8 · The exposure method according to item 6 of the patent application, wherein the first exposure and the second exposure are exposures to different layers of the substrate. 1 This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 public love) 527636 A8 B8 C8 D8 Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 6. Scope of patent application 9 The exposure method, wherein the first exposure and the second exposure are exposures to the same layer of the substrate. 10. The exposure method according to item 6 of the patent application range, wherein the first exposure and the second exposure are bonding exposures in which a pattern is bonded and copied on adjacent areas of the substrate. 11 · The exposure method according to item 6 of the patent application, wherein the first exposure and the second exposure are multiple exposures in which a pattern is duplicated and copied on the same area on the substrate. 12 · The exposure method according to item 1 of the patent application range, wherein the aforementioned control accuracy includes at least one of the following: the movement state of the aforementioned substrate when positioning a plurality of divided areas on the aforementioned substrate at a predetermined reference position, and the position during the aforementioned positioning Error tolerance: The relative position alignment accuracy of the mask with the pattern copied on the substrate and the substrate, the movement state when the mask and the substrate are synchronously moved in a predetermined direction, and when determining the synchronous movement Allowed for the setting. 13 · An exposure device, comprising: an exposure system for irradiating an energy beam onto a patterned mask to copy the pattern of the mask onto a substrate held by a substrate stage; a control system for Control the aforementioned exposure system as a whole, and when repeating at least two exposures to the same substrate, depending on the exposure accuracy required for each exposure, change the control factors of the aforementioned exposure system that contribute to efficiency. 14 • If the exposure device of the patent scope 13 is applied, in which the aforementioned control system 'depends on the exposure accuracy required for the exposure of each layer' when exposing different layers of the same substrate changes the control of the aforementioned exposure system which contributes to efficiency Paper size applies to Chinese national standard (CNS A4 specification (210 X 297)) -------------------- I ^ --------- line ► 1 '(Please read the notes on the back before filling out this page) 527636 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. The scope of the patent application. 15 · If you apply for the exposure device of the 13th patent scope, Among them, when the aforementioned control system performs at least two exposures on the same layer of the same substrate, it depends on the exposure accuracy required for each exposure, and changes the control factors of the aforementioned exposure system that contribute to efficiency. 16 The exposure device of item 15, wherein the control system controls the exposure system 'as at least two exposures to the same layer of the same substrate, and performs pattern bonding and copying on adjacent areas of the substrate. 17. For example, the exposure device according to item 15 of the patent application scope, wherein the aforementioned control system controls the aforementioned exposure system as at least two exposures to the same layer of the same substrate, and the pattern is duplicated on the same substrate on the same substrate. Multiple exposure of the area. 18 · For the exposure device of the 17th in the scope of patent application, the aforementioned control system is to perform at least the first exposure on the same substrate to specify the pattern size and the first exposure to specify the pattern shape. Control of the aforementioned exposure system by performing the multiple exposures of the two exposures. 19 • For the exposure device of the 13th scope of the patent application, the aforementioned control factors changed by the aforementioned control system include at least a plurality of divisions on the aforementioned substrate. When the areas are sequentially positioned at a predetermined reference position, one of the movement status of the substrate stage and the position error during the positioning is allowed. 20 · If the exposure device of the scope of application for item 13 of the patent application, where the aforementioned exposure system is equipped with A projection optical system for projecting the energy beam emitted from the photomask onto the substrate The aforementioned control factors changed by the aforementioned control system 3 This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------- i 1 ----- Order · --- 丨 —! Line • * (Please read the precautions on the back before filling in this page) 527636 A8 B8 C8 D8 VI. Patent application scope, including the focus deviation allowance for each previous exposure. (Please first (Please read the notes on the reverse side and fill in this page) 21 · If the exposure device in the scope of patent application item 13, the exposure system is equipped with a pulsed laser light source as the energy beam source that emits the aforementioned energy beam; The control factor includes at least one of the energy intensity and the repetition frequency of the pulsed light emitted from the pulsed laser light source and irradiated to the substrate during each exposure. 22 · The exposure device according to item 13 of the patent application scope, wherein the aforementioned control factors changed by the aforementioned control system include the relative positional alignment accuracy of the aforementioned mask pattern and the aforementioned substrate. 23 · If the exposure device according to item 22 of the patent application scope, wherein the aforementioned control factor changed by the aforementioned control system is the calibration mode of at least one of the aforementioned photomask and the aforementioned substrate. _ 24 · If the exposure device according to item 22 of the patent application scope, wherein the aforementioned control factors changed by the aforementioned control system are at least one of the number of exposure exposures and the number of sampling marks during the calibration of the aforementioned substrate. 25. If the exposure device according to item 22 of the patent application scope, wherein the aforementioned control factor changed by the aforementioned control system is the number of sampling marks when the aforementioned photomask is calibrated. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs26. For example, the exposure device under the scope of patent application No. 13 in which the aforementioned exposure system is provided with a photomask stage for holding the aforementioned photomask, and a synchronous driving device (in the aforementioned During the second exposure, the photomask stage and the substrate stage are simultaneously driven in a predetermined direction relative to the energy beam; the aforementioned control factors changed by the aforementioned control system include at least the movement of the two stages during each of the aforementioned exposures The state and the state of movement are irradiated on 4 paper sizes. Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 527636 A8 B8 C8 D8 The intensity of the aforementioned energy beam is one of the tolerances used to determine the position error of the synchronization of the two carriers. 27. For the exposure device according to item 13 of the patent application scope, wherein the aforementioned control system has a processing program file set with various parameters for controlling the aforementioned exposure system, the aforementioned processing program file can be individually set to perform each of the aforementioned times Exposure parameters 曝光. ^ 28 A component manufacturing method, ^ lithography step, the lithography step uses the method of the first patent application scope; method. 29. A component manufacturing method and a lithography step. The lithography step uses an exposure device according to item 13 of the patent application for exposure. 30 · —An exposure method that moves the first and second objects with respect to the energy beam, and scans and exposes the second object with the energy beam through the first object, which is characterized by using the second object For patterns with different reproduction accuracy, multiple scan exposures are performed on the same layer on the second object, and depending on the reproduction accuracy, the control factors of the scan exposure are different between the different patterns. 31. The exposure method according to item 30 of the application, wherein the aforementioned control factors include factors contributing to efficiency. 32. The exposure method according to item 30 of the patent application scope, wherein the aforementioned control factors include the aforementioned first and second objects' movement control factors related to the aforementioned scanning exposure. 33 · The exposure method according to any one of items 30 to 32 of the scope of patent application, which uses the aforementioned different patterns to stepwise scan the aforementioned 5th __ ------------- ^ -------- fr ------- I »-* (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297) (%) 527636 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs VI. Patent application scope 2 Multiple areas of an object are subject to multiple exposures. The aforementioned control factors are that the aforementioned reproduction accuracy of the different patterns is lower than that of the first pattern The second pattern is set to have a higher scanning exposure efficiency with respect to the second object than the first pattern. 34. A component manufacturing method including a lithography step, wherein the lithography step is a pattern formed by a plurality of layers on the second object, and at least one of the plurality of layers is the 33th item in the scope of patent application Exposure method. 35. An exposure device that moves the first and second objects respectively with respect to the energy beam, and scans and exposes the second object with the energy beam through the first object, and is characterized by having: 'a control system to When using a pattern with different reproduction accuracy for the second object and performing multiple scanning exposures on the same layer on the second object, the control factors of the scanning exposure differ between the different patterns depending on the reproduction accuracy. 36. The exposure device according to item 35 of the application for a patent, wherein multiple exposures are performed on each region of the second object in a step-and-scan manner using the aforementioned different patterns, respectively, and the aforementioned control factors are the aforementioned reproductions in the aforementioned different patterns The second pattern whose accuracy is lower than the first pattern, and the scanning exposure efficiency of the aforementioned second object is set to be higher than the aforementioned first pattern. 37. A component manufacturing method including a lithography step, wherein the lithography step is a pattern formed by a plurality of layers on the second object, and at least one of the plurality of layers is the 36th in the scope of patent application. The exposure device performs multiple exposures of the at least one layer. 6 This paper size applies to China National Standard (CNS) A4 specification (210 X 297 public love) ------ ^ ------- installation -------- order ------ --- line (please read the notes on the back before filling this page)
TW090102123A 2000-02-04 2001-02-02 Exposure method, exposure apparatus and manufacturing method of device TW527636B (en)

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US9529275B2 (en) 2007-02-21 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography scanner throughput
JP6066592B2 (en) * 2012-06-12 2017-01-25 キヤノン株式会社 Exposure apparatus and device manufacturing method

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