KR100781099B1 - 리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치 - Google Patents

리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치 Download PDF

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KR100781099B1
KR100781099B1 KR1020010022329A KR20010022329A KR100781099B1 KR 100781099 B1 KR100781099 B1 KR 100781099B1 KR 1020010022329 A KR1020010022329 A KR 1020010022329A KR 20010022329 A KR20010022329 A KR 20010022329A KR 100781099 B1 KR100781099 B1 KR 100781099B1
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South Korea
Prior art keywords
substrate
photosensitive material
developing
pattern
exposure
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KR1020010022329A
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English (en)
Korean (ko)
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KR20010098873A (ko
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이마이유지
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가부시키가이샤 니콘
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020010022329A 2000-04-25 2001-04-25 리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치 Expired - Lifetime KR100781099B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-124506 2000-04-25
JP2000124506 2000-04-25
JP2001-126644 2001-04-24
JP2001126644A JP2002015992A (ja) 2000-04-25 2001-04-24 リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法

Publications (2)

Publication Number Publication Date
KR20010098873A KR20010098873A (ko) 2001-11-08
KR100781099B1 true KR100781099B1 (ko) 2007-11-30

Family

ID=26590755

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010022329A Expired - Lifetime KR100781099B1 (ko) 2000-04-25 2001-04-25 리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치

Country Status (3)

Country Link
JP (1) JP2002015992A (enrdf_load_stackoverflow)
KR (1) KR100781099B1 (enrdf_load_stackoverflow)
TW (1) TW527638B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160025457A (ko) * 2014-08-27 2016-03-08 캐논 가부시끼가이샤 평가용 마스크, 평가 방법, 노광 장치 및 물품의 제조 방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003218022A (ja) * 2002-01-28 2003-07-31 Tokyo Electron Ltd 基板処理方法及び基板処理装置
KR100528971B1 (ko) * 2003-05-02 2005-11-16 한국전자통신연구원 전자빔 리소그라피 시스템
JP2004363085A (ja) * 2003-05-09 2004-12-24 Ebara Corp 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法
WO2019231518A1 (en) * 2018-05-31 2019-12-05 Applied Materials, Inc. Multi-substrate processing on digital lithography systems
CN113504711B (zh) * 2021-06-28 2023-05-02 上海华虹宏力半导体制造有限公司 光刻显影的检测方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JPH04101412A (ja) * 1990-08-20 1992-04-02 Matsushita Electric Ind Co Ltd レジスト塗布評価方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2560371B2 (ja) * 1988-01-05 1996-12-04 株式会社ニコン 基板処理システム
JP2580668B2 (ja) * 1988-01-21 1997-02-12 株式会社ニコン 露光方法、露光条件測定方法及ぴパターン測定方法
JPH0289305A (ja) * 1988-09-27 1990-03-29 Nikon Corp リソグラフィ装置
JPH04168715A (ja) * 1990-10-31 1992-06-16 Nec Yamagata Ltd フォトレジストパターン形成装置
JPH05102031A (ja) * 1991-10-04 1993-04-23 Fujitsu Ltd 感光性被膜の感度測定法及び耐蝕性被膜の形成法
US5283141A (en) * 1992-03-05 1994-02-01 National Semiconductor Photolithography control system and method using latent image measurements
JP3058541B2 (ja) * 1993-08-31 2000-07-04 ホーヤ株式会社 レジストパターン形成条件決定方法及びレジストパターン形成方法
JPH09218500A (ja) * 1996-02-14 1997-08-19 Dainippon Printing Co Ltd レジストパターンの作製方法
JPH09232223A (ja) * 1996-02-19 1997-09-05 Canon Inc アライメント方法
JPH09257457A (ja) * 1996-03-18 1997-10-03 Matsushita Electron Corp パターン形状計測方法およびパターン位置計測方法
JPH10260010A (ja) * 1997-03-19 1998-09-29 Nikon Corp マーク計測方法及び装置
JP4253860B2 (ja) * 1998-04-15 2009-04-15 ソニー株式会社 露光方法及び露光装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JPH04101412A (ja) * 1990-08-20 1992-04-02 Matsushita Electric Ind Co Ltd レジスト塗布評価方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160025457A (ko) * 2014-08-27 2016-03-08 캐논 가부시끼가이샤 평가용 마스크, 평가 방법, 노광 장치 및 물품의 제조 방법
CN105388699A (zh) * 2014-08-27 2016-03-09 佳能株式会社 评价用掩模、评价方法、曝光装置以及物品的制造方法
KR101952990B1 (ko) * 2014-08-27 2019-02-27 캐논 가부시끼가이샤 평가용 마스크, 평가 방법, 노광 장치 및 물품의 제조 방법

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Publication number Publication date
KR20010098873A (ko) 2001-11-08
JP2002015992A (ja) 2002-01-18
TW527638B (en) 2003-04-11

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