JP2002014337A5 - - Google Patents

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Publication number
JP2002014337A5
JP2002014337A5 JP2001129202A JP2001129202A JP2002014337A5 JP 2002014337 A5 JP2002014337 A5 JP 2002014337A5 JP 2001129202 A JP2001129202 A JP 2001129202A JP 2001129202 A JP2001129202 A JP 2001129202A JP 2002014337 A5 JP2002014337 A5 JP 2002014337A5
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JP
Japan
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JP2001129202A
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JP2002014337A (ja
JP5057613B2 (ja
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Priority to JP2001129202A priority Critical patent/JP5057613B2/ja
Priority claimed from JP2001129202A external-priority patent/JP5057613B2/ja
Publication of JP2002014337A publication Critical patent/JP2002014337A/ja
Publication of JP2002014337A5 publication Critical patent/JP2002014337A5/ja
Application granted granted Critical
Publication of JP5057613B2 publication Critical patent/JP5057613B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001129202A 2000-04-27 2001-04-26 半導体装置及び電子機器 Expired - Fee Related JP5057613B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001129202A JP5057613B2 (ja) 2000-04-27 2001-04-26 半導体装置及び電子機器

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000128526 2000-04-27
JP2000-128526 2000-04-27
JP2000128526 2000-04-27
JP2001129202A JP5057613B2 (ja) 2000-04-27 2001-04-26 半導体装置及び電子機器

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2011129391A Division JP5079125B2 (ja) 2000-04-27 2011-06-09 半導体装置及び電子機器
JP2012123993A Division JP5132827B2 (ja) 2000-04-27 2012-05-31 半導体装置及び電子機器

Publications (3)

Publication Number Publication Date
JP2002014337A JP2002014337A (ja) 2002-01-18
JP2002014337A5 true JP2002014337A5 (ja) 2008-05-22
JP5057613B2 JP5057613B2 (ja) 2012-10-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001129202A Expired - Fee Related JP5057613B2 (ja) 2000-04-27 2001-04-26 半導体装置及び電子機器

Country Status (1)

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JP (1) JP5057613B2 (ja)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US7652286B2 (en) 2001-12-28 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device producing system

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US6933527B2 (en) 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
JP2003204067A (ja) 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
US6841797B2 (en) 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
JP3722116B2 (ja) * 2002-01-23 2005-11-30 セイコーエプソン株式会社 反射型電気光学装置、および電子機器
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TWI272666B (en) 2002-01-28 2007-02-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI261358B (en) 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP4312466B2 (ja) * 2002-01-28 2009-08-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4101533B2 (ja) 2002-03-01 2008-06-18 株式会社半導体エネルギー研究所 半透過型の液晶表示装置の作製方法
KR100979926B1 (ko) 2002-03-05 2010-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체소자 및 그것을 사용한 반도체장치
US6847050B2 (en) 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
US6930326B2 (en) 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
US6841434B2 (en) 2002-03-26 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6882394B2 (en) 2002-05-30 2005-04-19 Fujitsu-Display Technologies Corporation Reflective liquid crystal display including a step of applying charged particles on the organic resin and film method of manufacturing
JP4060125B2 (ja) * 2002-05-30 2008-03-12 シャープ株式会社 液晶表示装置用基板及びそれを備えた液晶表示装置及びその製造方法
JP4408012B2 (ja) 2002-07-01 2010-02-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7485579B2 (en) 2002-12-13 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4489346B2 (ja) 2002-12-17 2010-06-23 シャープ株式会社 液晶表示装置
US7205986B2 (en) 2002-12-18 2007-04-17 Semiconductor Energy Laboratory Co., Ltd. Image display device and testing method of the same
JP2004200378A (ja) 2002-12-18 2004-07-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4663963B2 (ja) 2003-02-17 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4624109B2 (ja) 2003-03-25 2011-02-02 株式会社半導体エネルギー研究所 半導体装置の検査回路
US7518602B2 (en) 2004-12-06 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Test circuit and display device having the same
KR101623224B1 (ko) * 2008-09-12 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법

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JPS59204009A (ja) * 1983-05-06 1984-11-19 Seiko Epson Corp カラ−フイルタ−
JPH0644118B2 (ja) * 1984-11-07 1994-06-08 松下電器産業株式会社 カラ−液晶表示装置
JPH01188801A (ja) * 1988-01-25 1989-07-28 Matsushita Electric Ind Co Ltd カラーフィルタの製造方法
JPH02287303A (ja) * 1989-04-28 1990-11-27 Ube Ind Ltd 多層カラーフィルター
JP2756206B2 (ja) * 1992-02-19 1998-05-25 シャープ株式会社 反射型液晶表示装置及びその製造方法
JP3398453B2 (ja) * 1994-02-24 2003-04-21 株式会社東芝 薄膜トランジスタの製造方法
JP3559107B2 (ja) * 1995-06-19 2004-08-25 株式会社半導体エネルギー研究所 表示装置
JP2990046B2 (ja) * 1995-08-16 1999-12-13 日本電気株式会社 反射型液晶表示装置及びその製造方法
JPH10268292A (ja) * 1997-01-21 1998-10-09 Sharp Corp カラーフィルタ基板およびカラー液晶表示素子
JPH10221704A (ja) * 1997-02-07 1998-08-21 Sharp Corp 反射型液晶表示装置およびその製造方法
JPH11133399A (ja) * 1997-10-27 1999-05-21 Hitachi Ltd 反射型液晶表示装置とその製造方法
JP3019831B2 (ja) * 1998-03-11 2000-03-13 日本電気株式会社 反射型液晶表示装置及びその製造方法
JPH11337961A (ja) * 1998-05-26 1999-12-10 Sharp Corp 反射型液晶表示装置およびその製造方法
JP3478528B2 (ja) * 1998-07-23 2003-12-15 シャープ株式会社 液晶表示装置およびその製造方法
JP2000047189A (ja) * 1998-07-28 2000-02-18 Sharp Corp 液晶表示素子
JP2000111724A (ja) * 1998-10-02 2000-04-21 Sharp Corp カラーフィルター、カラーフィルターの製造方法、および、それを用いた液晶表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7652286B2 (en) 2001-12-28 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device producing system

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