JP2001517367A5 - - Google Patents

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Publication number
JP2001517367A5
JP2001517367A5 JP1998540716A JP54071698A JP2001517367A5 JP 2001517367 A5 JP2001517367 A5 JP 2001517367A5 JP 1998540716 A JP1998540716 A JP 1998540716A JP 54071698 A JP54071698 A JP 54071698A JP 2001517367 A5 JP2001517367 A5 JP 2001517367A5
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JP
Japan
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JP1998540716A
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English (en)
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JP4451934B2 (ja
JP2001517367A (ja
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Priority claimed from US08/820,533 external-priority patent/US5849641A/en
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Publication of JP2001517367A publication Critical patent/JP2001517367A/ja
Publication of JP2001517367A5 publication Critical patent/JP2001517367A5/ja
Application granted granted Critical
Publication of JP4451934B2 publication Critical patent/JP4451934B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

Figure 2001517367
Figure 2001517367
Figure 2001517367
Figure 2001517367
Figure 2001517367
Figure 2001517367
JP54071698A 1997-03-19 1998-03-17 導電層をエッチングする方法及び集積回路 Expired - Lifetime JP4451934B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/820,533 US5849641A (en) 1997-03-19 1997-03-19 Methods and apparatus for etching a conductive layer to improve yield
US08/820,533 1997-03-19
PCT/US1998/005202 WO1998042020A1 (en) 1997-03-19 1998-03-17 Method for etching a conductive layer

Publications (3)

Publication Number Publication Date
JP2001517367A JP2001517367A (ja) 2001-10-02
JP2001517367A5 true JP2001517367A5 (ja) 2005-11-10
JP4451934B2 JP4451934B2 (ja) 2010-04-14

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ID=25231067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54071698A Expired - Lifetime JP4451934B2 (ja) 1997-03-19 1998-03-17 導電層をエッチングする方法及び集積回路

Country Status (8)

Country Link
US (1) US5849641A (ja)
EP (1) EP1010203B1 (ja)
JP (1) JP4451934B2 (ja)
KR (1) KR100493486B1 (ja)
AT (1) ATE252275T1 (ja)
DE (1) DE69819023T2 (ja)
TW (1) TW468226B (ja)
WO (1) WO1998042020A1 (ja)

Families Citing this family (17)

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US6159861A (en) * 1997-08-28 2000-12-12 Nec Corporation Method of manufacturing semiconductor device
KR100257080B1 (ko) * 1997-09-26 2000-05-15 김영환 반도체소자의제조방법
US6077762A (en) * 1997-12-22 2000-06-20 Vlsi Technology, Inc. Method and apparatus for rapidly discharging plasma etched interconnect structures
JP3819576B2 (ja) * 1997-12-25 2006-09-13 沖電気工業株式会社 半導体装置及びその製造方法
US5939335A (en) 1998-01-06 1999-08-17 International Business Machines Corporation Method for reducing stress in the metallization of an integrated circuit
US6106663A (en) * 1998-06-19 2000-08-22 Lam Research Corporation Semiconductor process chamber electrode
US6248252B1 (en) * 1999-02-24 2001-06-19 Advanced Micro Devices, Inc. Method of fabricating sub-micron metal lines
TW573369B (en) * 1999-03-31 2004-01-21 Lam Res Corp Improved techniques for etching an aluminum neodymium-containing layer
US6383931B1 (en) * 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
US6387820B1 (en) * 2000-09-19 2002-05-14 Advanced Micro Devices, Inc. BC13/AR chemistry for metal overetching on a high density plasma etcher
DE10149736C1 (de) * 2001-10-09 2003-04-17 Infineon Technologies Ag Verfahren zum Ätzen eines Metallschichtsystems
US7244671B2 (en) * 2003-07-25 2007-07-17 Unitive International Limited Methods of forming conductive structures including titanium-tungsten base layers and related structures
KR100831572B1 (ko) * 2005-12-29 2008-05-21 동부일렉트로닉스 주식회사 반도체 소자의 배선 형성방법
JP2007214171A (ja) * 2006-02-07 2007-08-23 Hitachi High-Technologies Corp エッチング処理方法
US20100003828A1 (en) * 2007-11-28 2010-01-07 Guowen Ding Methods for adjusting critical dimension uniformity in an etch process with a highly concentrated unsaturated hydrocarbon gas
US8409937B2 (en) * 2011-01-07 2013-04-02 Eastman Kodak Company Producing transistor including multi-layer reentrant profile
CN106158724B (zh) * 2015-03-24 2019-03-12 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法

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US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
FR2312114A1 (fr) * 1975-05-22 1976-12-17 Ibm Attaque de materiaux par ions reactifs
EP0023429B1 (en) * 1979-07-31 1985-12-18 Fujitsu Limited Dry etching of metal film
US4373990A (en) * 1981-01-08 1983-02-15 Bell Telephone Laboratories, Incorporated Dry etching aluminum
JPS57170534A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Dry etching method for aluminum and aluminum alloy
US4370196A (en) * 1982-03-25 1983-01-25 Rca Corporation Anisotropic etching of aluminum
JPS63238288A (ja) * 1987-03-27 1988-10-04 Fujitsu Ltd ドライエツチング方法
US4838992A (en) * 1987-05-27 1989-06-13 Northern Telecom Limited Method of etching aluminum alloys in semi-conductor wafers
JPS6432633A (en) * 1987-07-29 1989-02-02 Hitachi Ltd Taper etching method
NL8902744A (nl) * 1989-11-07 1991-06-03 Koninkl Philips Electronics Nv Werkwijze voor het aanbrengen van sporen uit aluminium of een aluminiumlegering op een substraat.
DE3940083A1 (de) * 1989-12-04 1991-06-13 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnen in integrierten halbleiterschaltungen
JP2673380B2 (ja) * 1990-02-20 1997-11-05 三菱電機株式会社 プラズマエッチングの方法
JP3170791B2 (ja) * 1990-09-11 2001-05-28 ソニー株式会社 Ａｌ系材料膜のエッチング方法
US5211804A (en) * 1990-10-16 1993-05-18 Oki Electric Industry, Co., Ltd. Method for dry etching
US5185058A (en) * 1991-01-29 1993-02-09 Micron Technology, Inc. Process for etching semiconductor devices
DE4107006A1 (de) * 1991-03-05 1992-09-10 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
US5126008A (en) * 1991-05-03 1992-06-30 Applied Materials, Inc. Corrosion-free aluminum etching process for fabricating an integrated circuit structure
EP0535540A3 (en) * 1991-10-02 1994-10-19 Siemens Ag Etching process for aluminium-containing coatings
DE4136178A1 (de) * 1991-11-02 1993-05-06 Deutsche Thomson-Brandt Gmbh, 7730 Villingen-Schwenningen, De Schaltung zur kontinuierlichen zoom-einstellung der bildbreite in einem fernsehempfaenger
JPH06108272A (ja) * 1992-09-30 1994-04-19 Sumitomo Metal Ind Ltd プラズマエッチング方法
JP3449741B2 (ja) * 1992-11-26 2003-09-22 東京エレクトロン株式会社 プラズマエッチング方法
US5387556A (en) * 1993-02-24 1995-02-07 Applied Materials, Inc. Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub.2
JP3317582B2 (ja) * 1994-06-01 2002-08-26 菱電セミコンダクタシステムエンジニアリング株式会社 微細パターンの形成方法
US5783101A (en) * 1994-09-16 1998-07-21 Applied Materials, Inc. High etch rate residue free metal etch process with low frequency high power inductive coupled plasma

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