JP2001516932A - フラッシュ・メモリ用のセンス増幅器 - Google Patents

フラッシュ・メモリ用のセンス増幅器

Info

Publication number
JP2001516932A
JP2001516932A JP2000512209A JP2000512209A JP2001516932A JP 2001516932 A JP2001516932 A JP 2001516932A JP 2000512209 A JP2000512209 A JP 2000512209A JP 2000512209 A JP2000512209 A JP 2000512209A JP 2001516932 A JP2001516932 A JP 2001516932A
Authority
JP
Japan
Prior art keywords
sense amplifier
cell
coupled
sense
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000512209A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001516932A5 (enExample
Inventor
テッドロウ，ケリー・ディ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of JP2001516932A publication Critical patent/JP2001516932A/ja
Publication of JP2001516932A5 publication Critical patent/JP2001516932A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Amplifiers (AREA)
JP2000512209A 1997-09-16 1998-07-17 フラッシュ・メモリ用のセンス増幅器 Pending JP2001516932A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/931,247 US5973957A (en) 1997-09-16 1997-09-16 Sense amplifier comprising a preamplifier and a differential input latch for flash memories
US08/931,247 1997-09-16
PCT/US1998/014797 WO1999014758A1 (en) 1997-09-16 1998-07-17 Sense amplifier for flash memories

Publications (2)

Publication Number Publication Date
JP2001516932A true JP2001516932A (ja) 2001-10-02
JP2001516932A5 JP2001516932A5 (enExample) 2006-01-05

Family

ID=25460470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000512209A Pending JP2001516932A (ja) 1997-09-16 1998-07-17 フラッシュ・メモリ用のセンス増幅器

Country Status (9)

Country Link
US (1) US5973957A (enExample)
EP (1) EP1023731B1 (enExample)
JP (1) JP2001516932A (enExample)
KR (1) KR100382693B1 (enExample)
AU (1) AU8409898A (enExample)
BR (1) BR9812817A (enExample)
DE (1) DE69835896T2 (enExample)
TW (1) TW422989B (enExample)
WO (1) WO1999014758A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10484229B2 (en) 2017-02-03 2019-11-19 Fujitsu Limited PAM reception circuit and reception apparatus

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CA2217359C (en) * 1997-09-30 2005-04-12 Mosaid Technologies Incorporated Method for multilevel dram sensing
IT1302433B1 (it) * 1998-08-13 2000-09-05 Texas Instruments Italia Spa Circuito di lettura per dispositivi di memoria flash con perfezionatimargini di programmazione e procedimento di funzionamento
US6297990B1 (en) * 1998-09-29 2001-10-02 Texas Instruments Incorporated Balanced reference sensing circuit
FR2786910B1 (fr) * 1998-12-04 2002-11-29 St Microelectronics Sa Memoire a grille flottante multiniveau
US6232801B1 (en) 1999-08-04 2001-05-15 Vlsi Technology, Inc. Comparators and comparison methods
US6188606B1 (en) 1999-08-06 2001-02-13 Advanced Micro Devices, Inc. Multi state sensing of NAND memory cells by varying source bias
US6108258A (en) * 1999-08-19 2000-08-22 United Integrated Circuits Corp. Sense amplifier for high-speed integrated circuit memory device
US6141244A (en) * 1999-09-02 2000-10-31 Advanced Micro Devices, Inc. Multi level sensing of NAND memory cells by external bias current
US6191620B1 (en) * 1999-11-04 2001-02-20 International Business Machines Corporation Sense amplifier/comparator circuit and data comparison method
US7082056B2 (en) * 2004-03-12 2006-07-25 Super Talent Electronics, Inc. Flash memory device and architecture with multi level cells
US6392448B1 (en) 2000-02-03 2002-05-21 Teradyne, Inc. Common-mode detection circuit with cross-coupled compensation
US6300804B1 (en) 2000-02-09 2001-10-09 Teradyne, Inc. Differential comparator with dispersion reduction circuitry
US6396733B1 (en) * 2000-07-17 2002-05-28 Micron Technology, Inc. Magneto-resistive memory having sense amplifier with offset control
US6538921B2 (en) 2000-08-17 2003-03-25 Nve Corporation Circuit selection of magnetic memory cells and related cell structures
US6515906B2 (en) * 2000-12-28 2003-02-04 Intel Corporation Method and apparatus for matched-reference sensing architecture for non-volatile memories
US6744086B2 (en) 2001-05-15 2004-06-01 Nve Corporation Current switched magnetoresistive memory cell
US6518798B2 (en) * 2001-06-07 2003-02-11 Atmel Corporation Sense amplifier with improved latching
US7348206B2 (en) * 2001-10-26 2008-03-25 The Regents Of The University Of California Formation of self-assembled monolayers of redox SAMs on silicon for molecular memory applications
KR100455441B1 (ko) * 2001-12-29 2004-11-06 주식회사 하이닉스반도체 멀티레벨 플래쉬 메모리 셀 센싱 회로
US6747893B2 (en) 2002-03-14 2004-06-08 Intel Corporation Storing data in non-volatile memory devices
US6535443B1 (en) * 2002-06-13 2003-03-18 Dmel Incorporated Reduction of standby current
US7023735B2 (en) * 2003-06-17 2006-04-04 Ramot At Tel-Aviv University Ltd. Methods of increasing the reliability of a flash memory
JP2005092923A (ja) * 2003-09-12 2005-04-07 Renesas Technology Corp 半導体記憶装置
KR100621632B1 (ko) * 2005-03-22 2006-09-19 삼성전자주식회사 시리얼 센싱 동작을 수행하는 노어 플래시 메모리 장치
US7466613B2 (en) * 2005-04-15 2008-12-16 Atmel Corporation Sense amplifier for flash memory device
US7272041B2 (en) * 2005-06-30 2007-09-18 Intel Corporation Memory array with pseudo single bit memory cell and method
US20070024325A1 (en) * 2005-08-01 2007-02-01 Chung-Kuang Chen Sense amplifier with input offset compensation
DE102006020485B4 (de) * 2006-04-28 2019-07-04 Atmel Corp. Operationsverstärker
US7688648B2 (en) * 2008-09-02 2010-03-30 Juhan Kim High speed flash memory
US7542348B1 (en) 2007-12-19 2009-06-02 Juhan Kim NOR flash memory including bipolar segment read circuit
KR101057725B1 (ko) * 2008-12-31 2011-08-18 주식회사 하이닉스반도체 멀티 레벨 셀 데이터 센싱 장치 및 그 방법
US8363475B2 (en) 2010-03-30 2013-01-29 Ememory Technology Inc. Non-volatile memory unit cell with improved sensing margin and reliability
US8509003B2 (en) * 2011-09-20 2013-08-13 Taiwan Semiconductor Manufacturing Co., Ltd. Read architecture for MRAM
US9478297B2 (en) 2014-01-31 2016-10-25 Taiwan Semiconductor Manufacturing Company Limited Multiple-time programmable memory
US9728278B2 (en) 2014-10-24 2017-08-08 Micron Technology, Inc. Threshold voltage margin analysis
CN116524975B (zh) * 2023-07-03 2023-09-15 芯天下技术股份有限公司 一种用于存储芯片的快速读取电路、存储芯片及电子设备

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US3753235A (en) * 1971-08-18 1973-08-14 Ibm Monolithic memory module redundancy scheme using prewired substrates
JPS51113545A (en) * 1975-03-31 1976-10-06 Hitachi Ltd Memory
US5587952A (en) * 1984-12-17 1996-12-24 Hitachi, Ltd. Dynamic random access memory including read preamplifiers activated before rewrite amplifiers
US4933907A (en) * 1987-12-03 1990-06-12 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory device and operating method therefor
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5325335A (en) * 1991-05-30 1994-06-28 Integrated Device Technology, Inc. Memories and amplifiers suitable for low voltage power supplies
US5550772A (en) * 1995-02-13 1996-08-27 National Semiconductor Corporation Memory array utilizing multi-state memory cells
JP2689948B2 (ja) * 1995-04-28 1997-12-10 日本電気株式会社 多値メモリセルを有する半導体記憶装置
TW326535B (en) * 1995-08-08 1998-02-11 Hitachi Ltd Semiconductor memory device and read-out circuit
US5640356A (en) * 1995-12-29 1997-06-17 Cypress Semiconductor Corp. Two-stage differential sense amplifier with positive feedback in the first and second stages
US5668766A (en) * 1996-05-16 1997-09-16 Intel Corporation Method and apparatus for increasing memory read access speed using double-sensing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10484229B2 (en) 2017-02-03 2019-11-19 Fujitsu Limited PAM reception circuit and reception apparatus

Also Published As

Publication number Publication date
KR100382693B1 (ko) 2003-05-09
AU8409898A (en) 1999-04-05
EP1023731A4 (en) 2001-04-11
BR9812817A (pt) 2001-12-18
DE69835896T2 (de) 2007-04-26
EP1023731B1 (en) 2006-09-13
US5973957A (en) 1999-10-26
TW422989B (en) 2001-02-21
WO1999014758A1 (en) 1999-03-25
EP1023731A1 (en) 2000-08-02
HK1028131A1 (en) 2001-02-02
KR20010024053A (ko) 2001-03-26
DE69835896D1 (de) 2006-10-26

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