KR100382693B1 - 플래시 메모리용 센스 증폭기 - Google Patents

플래시 메모리용 센스 증폭기 Download PDF

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Publication number
KR100382693B1
KR100382693B1 KR10-2000-7002791A KR20007002791A KR100382693B1 KR 100382693 B1 KR100382693 B1 KR 100382693B1 KR 20007002791 A KR20007002791 A KR 20007002791A KR 100382693 B1 KR100382693 B1 KR 100382693B1
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KR
South Korea
Prior art keywords
sense amplifier
cell
signal
preamplifier
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2000-7002791A
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English (en)
Korean (ko)
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KR20010024053A (ko
Inventor
테드로케리디
Original Assignee
인텔 코오퍼레이션
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Application filed by 인텔 코오퍼레이션 filed Critical 인텔 코오퍼레이션
Publication of KR20010024053A publication Critical patent/KR20010024053A/ko
Application granted granted Critical
Publication of KR100382693B1 publication Critical patent/KR100382693B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Amplifiers (AREA)
KR10-2000-7002791A 1997-09-16 1998-07-17 플래시 메모리용 센스 증폭기 Expired - Fee Related KR100382693B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/931,247 1997-09-16
US08/931,247 US5973957A (en) 1997-09-16 1997-09-16 Sense amplifier comprising a preamplifier and a differential input latch for flash memories

Publications (2)

Publication Number Publication Date
KR20010024053A KR20010024053A (ko) 2001-03-26
KR100382693B1 true KR100382693B1 (ko) 2003-05-09

Family

ID=25460470

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-7002791A Expired - Fee Related KR100382693B1 (ko) 1997-09-16 1998-07-17 플래시 메모리용 센스 증폭기

Country Status (9)

Country Link
US (1) US5973957A (enExample)
EP (1) EP1023731B1 (enExample)
JP (1) JP2001516932A (enExample)
KR (1) KR100382693B1 (enExample)
AU (1) AU8409898A (enExample)
BR (1) BR9812817A (enExample)
DE (1) DE69835896T2 (enExample)
TW (1) TW422989B (enExample)
WO (1) WO1999014758A1 (enExample)

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CA2217359C (en) * 1997-09-30 2005-04-12 Mosaid Technologies Incorporated Method for multilevel dram sensing
IT1302433B1 (it) * 1998-08-13 2000-09-05 Texas Instruments Italia Spa Circuito di lettura per dispositivi di memoria flash con perfezionatimargini di programmazione e procedimento di funzionamento
US6297990B1 (en) * 1998-09-29 2001-10-02 Texas Instruments Incorporated Balanced reference sensing circuit
FR2786910B1 (fr) * 1998-12-04 2002-11-29 St Microelectronics Sa Memoire a grille flottante multiniveau
US6232801B1 (en) * 1999-08-04 2001-05-15 Vlsi Technology, Inc. Comparators and comparison methods
US6188606B1 (en) 1999-08-06 2001-02-13 Advanced Micro Devices, Inc. Multi state sensing of NAND memory cells by varying source bias
US6108258A (en) * 1999-08-19 2000-08-22 United Integrated Circuits Corp. Sense amplifier for high-speed integrated circuit memory device
US6141244A (en) * 1999-09-02 2000-10-31 Advanced Micro Devices, Inc. Multi level sensing of NAND memory cells by external bias current
US6191620B1 (en) * 1999-11-04 2001-02-20 International Business Machines Corporation Sense amplifier/comparator circuit and data comparison method
US7082056B2 (en) * 2004-03-12 2006-07-25 Super Talent Electronics, Inc. Flash memory device and architecture with multi level cells
US6392448B1 (en) 2000-02-03 2002-05-21 Teradyne, Inc. Common-mode detection circuit with cross-coupled compensation
US6300804B1 (en) 2000-02-09 2001-10-09 Teradyne, Inc. Differential comparator with dispersion reduction circuitry
US6396733B1 (en) * 2000-07-17 2002-05-28 Micron Technology, Inc. Magneto-resistive memory having sense amplifier with offset control
US6538921B2 (en) 2000-08-17 2003-03-25 Nve Corporation Circuit selection of magnetic memory cells and related cell structures
US6515906B2 (en) * 2000-12-28 2003-02-04 Intel Corporation Method and apparatus for matched-reference sensing architecture for non-volatile memories
US6744086B2 (en) 2001-05-15 2004-06-01 Nve Corporation Current switched magnetoresistive memory cell
US6518798B2 (en) * 2001-06-07 2003-02-11 Atmel Corporation Sense amplifier with improved latching
US7348206B2 (en) * 2001-10-26 2008-03-25 The Regents Of The University Of California Formation of self-assembled monolayers of redox SAMs on silicon for molecular memory applications
KR100455441B1 (ko) * 2001-12-29 2004-11-06 주식회사 하이닉스반도체 멀티레벨 플래쉬 메모리 셀 센싱 회로
US6747893B2 (en) 2002-03-14 2004-06-08 Intel Corporation Storing data in non-volatile memory devices
US6535443B1 (en) * 2002-06-13 2003-03-18 Dmel Incorporated Reduction of standby current
US7023735B2 (en) * 2003-06-17 2006-04-04 Ramot At Tel-Aviv University Ltd. Methods of increasing the reliability of a flash memory
JP2005092923A (ja) * 2003-09-12 2005-04-07 Renesas Technology Corp 半導体記憶装置
KR100621632B1 (ko) * 2005-03-22 2006-09-19 삼성전자주식회사 시리얼 센싱 동작을 수행하는 노어 플래시 메모리 장치
US7466613B2 (en) * 2005-04-15 2008-12-16 Atmel Corporation Sense amplifier for flash memory device
US7272041B2 (en) * 2005-06-30 2007-09-18 Intel Corporation Memory array with pseudo single bit memory cell and method
US20070024325A1 (en) * 2005-08-01 2007-02-01 Chung-Kuang Chen Sense amplifier with input offset compensation
DE102006020485B4 (de) * 2006-04-28 2019-07-04 Atmel Corp. Operationsverstärker
US7688648B2 (en) * 2008-09-02 2010-03-30 Juhan Kim High speed flash memory
US7542348B1 (en) 2007-12-19 2009-06-02 Juhan Kim NOR flash memory including bipolar segment read circuit
KR101057725B1 (ko) * 2008-12-31 2011-08-18 주식회사 하이닉스반도체 멀티 레벨 셀 데이터 센싱 장치 및 그 방법
US8363475B2 (en) 2010-03-30 2013-01-29 Ememory Technology Inc. Non-volatile memory unit cell with improved sensing margin and reliability
US8509003B2 (en) * 2011-09-20 2013-08-13 Taiwan Semiconductor Manufacturing Co., Ltd. Read architecture for MRAM
US9478297B2 (en) 2014-01-31 2016-10-25 Taiwan Semiconductor Manufacturing Company Limited Multiple-time programmable memory
US9728278B2 (en) * 2014-10-24 2017-08-08 Micron Technology, Inc. Threshold voltage margin analysis
JP2018125796A (ja) 2017-02-03 2018-08-09 富士通株式会社 Ｐａｍ受信回路及び受信装置
CN116524975B (zh) * 2023-07-03 2023-09-15 芯天下技术股份有限公司 一种用于存储芯片的快速读取电路、存储芯片及电子设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5325335A (en) * 1991-05-30 1994-06-28 Integrated Device Technology, Inc. Memories and amplifiers suitable for low voltage power supplies
US5640356A (en) * 1995-12-29 1997-06-17 Cypress Semiconductor Corp. Two-stage differential sense amplifier with positive feedback in the first and second stages

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US3753235A (en) * 1971-08-18 1973-08-14 Ibm Monolithic memory module redundancy scheme using prewired substrates
JPS51113545A (en) * 1975-03-31 1976-10-06 Hitachi Ltd Memory
US5587952A (en) * 1984-12-17 1996-12-24 Hitachi, Ltd. Dynamic random access memory including read preamplifiers activated before rewrite amplifiers
US4933907A (en) * 1987-12-03 1990-06-12 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory device and operating method therefor
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5550772A (en) * 1995-02-13 1996-08-27 National Semiconductor Corporation Memory array utilizing multi-state memory cells
JP2689948B2 (ja) * 1995-04-28 1997-12-10 日本電気株式会社 多値メモリセルを有する半導体記憶装置
TW326535B (en) * 1995-08-08 1998-02-11 Hitachi Ltd Semiconductor memory device and read-out circuit
US5668766A (en) * 1996-05-16 1997-09-16 Intel Corporation Method and apparatus for increasing memory read access speed using double-sensing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5325335A (en) * 1991-05-30 1994-06-28 Integrated Device Technology, Inc. Memories and amplifiers suitable for low voltage power supplies
US5640356A (en) * 1995-12-29 1997-06-17 Cypress Semiconductor Corp. Two-stage differential sense amplifier with positive feedback in the first and second stages

Also Published As

Publication number Publication date
TW422989B (en) 2001-02-21
EP1023731A1 (en) 2000-08-02
AU8409898A (en) 1999-04-05
HK1028131A1 (en) 2001-02-02
BR9812817A (pt) 2001-12-18
WO1999014758A1 (en) 1999-03-25
KR20010024053A (ko) 2001-03-26
DE69835896T2 (de) 2007-04-26
DE69835896D1 (de) 2006-10-26
EP1023731B1 (en) 2006-09-13
EP1023731A4 (en) 2001-04-11
JP2001516932A (ja) 2001-10-02
US5973957A (en) 1999-10-26

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