|
CA2217359C
(en)
*
|
1997-09-30 |
2005-04-12 |
Mosaid Technologies Incorporated |
Method for multilevel dram sensing
|
|
IT1302433B1
(it)
*
|
1998-08-13 |
2000-09-05 |
Texas Instruments Italia Spa |
Circuito di lettura per dispositivi di memoria flash con perfezionatimargini di programmazione e procedimento di funzionamento
|
|
US6297990B1
(en)
*
|
1998-09-29 |
2001-10-02 |
Texas Instruments Incorporated |
Balanced reference sensing circuit
|
|
FR2786910B1
(fr)
*
|
1998-12-04 |
2002-11-29 |
St Microelectronics Sa |
Memoire a grille flottante multiniveau
|
|
US6232801B1
(en)
|
1999-08-04 |
2001-05-15 |
Vlsi Technology, Inc. |
Comparators and comparison methods
|
|
US6188606B1
(en)
|
1999-08-06 |
2001-02-13 |
Advanced Micro Devices, Inc. |
Multi state sensing of NAND memory cells by varying source bias
|
|
US6108258A
(en)
*
|
1999-08-19 |
2000-08-22 |
United Integrated Circuits Corp. |
Sense amplifier for high-speed integrated circuit memory device
|
|
US6141244A
(en)
*
|
1999-09-02 |
2000-10-31 |
Advanced Micro Devices, Inc. |
Multi level sensing of NAND memory cells by external bias current
|
|
US6191620B1
(en)
*
|
1999-11-04 |
2001-02-20 |
International Business Machines Corporation |
Sense amplifier/comparator circuit and data comparison method
|
|
US7082056B2
(en)
*
|
2004-03-12 |
2006-07-25 |
Super Talent Electronics, Inc. |
Flash memory device and architecture with multi level cells
|
|
US6392448B1
(en)
|
2000-02-03 |
2002-05-21 |
Teradyne, Inc. |
Common-mode detection circuit with cross-coupled compensation
|
|
US6300804B1
(en)
|
2000-02-09 |
2001-10-09 |
Teradyne, Inc. |
Differential comparator with dispersion reduction circuitry
|
|
US6396733B1
(en)
*
|
2000-07-17 |
2002-05-28 |
Micron Technology, Inc. |
Magneto-resistive memory having sense amplifier with offset control
|
|
US6538921B2
(en)
|
2000-08-17 |
2003-03-25 |
Nve Corporation |
Circuit selection of magnetic memory cells and related cell structures
|
|
US6515906B2
(en)
*
|
2000-12-28 |
2003-02-04 |
Intel Corporation |
Method and apparatus for matched-reference sensing architecture for non-volatile memories
|
|
US6744086B2
(en)
|
2001-05-15 |
2004-06-01 |
Nve Corporation |
Current switched magnetoresistive memory cell
|
|
US6518798B2
(en)
*
|
2001-06-07 |
2003-02-11 |
Atmel Corporation |
Sense amplifier with improved latching
|
|
US7348206B2
(en)
*
|
2001-10-26 |
2008-03-25 |
The Regents Of The University Of California |
Formation of self-assembled monolayers of redox SAMs on silicon for molecular memory applications
|
|
KR100455441B1
(ko)
*
|
2001-12-29 |
2004-11-06 |
주식회사 하이닉스반도체 |
멀티레벨 플래쉬 메모리 셀 센싱 회로
|
|
US6747893B2
(en)
|
2002-03-14 |
2004-06-08 |
Intel Corporation |
Storing data in non-volatile memory devices
|
|
US6535443B1
(en)
*
|
2002-06-13 |
2003-03-18 |
Dmel Incorporated |
Reduction of standby current
|
|
US7023735B2
(en)
*
|
2003-06-17 |
2006-04-04 |
Ramot At Tel-Aviv University Ltd. |
Methods of increasing the reliability of a flash memory
|
|
JP2005092923A
(ja)
*
|
2003-09-12 |
2005-04-07 |
Renesas Technology Corp |
半導体記憶装置
|
|
KR100621632B1
(ko)
*
|
2005-03-22 |
2006-09-19 |
삼성전자주식회사 |
시리얼 센싱 동작을 수행하는 노어 플래시 메모리 장치
|
|
US7466613B2
(en)
*
|
2005-04-15 |
2008-12-16 |
Atmel Corporation |
Sense amplifier for flash memory device
|
|
US7272041B2
(en)
*
|
2005-06-30 |
2007-09-18 |
Intel Corporation |
Memory array with pseudo single bit memory cell and method
|
|
US20070024325A1
(en)
*
|
2005-08-01 |
2007-02-01 |
Chung-Kuang Chen |
Sense amplifier with input offset compensation
|
|
DE102006020485B4
(de)
|
2006-04-28 |
2019-07-04 |
Atmel Corp. |
Operationsverstärker
|
|
US7688648B2
(en)
*
|
2008-09-02 |
2010-03-30 |
Juhan Kim |
High speed flash memory
|
|
US7542348B1
(en)
|
2007-12-19 |
2009-06-02 |
Juhan Kim |
NOR flash memory including bipolar segment read circuit
|
|
KR101057725B1
(ko)
*
|
2008-12-31 |
2011-08-18 |
주식회사 하이닉스반도체 |
멀티 레벨 셀 데이터 센싱 장치 및 그 방법
|
|
US8363475B2
(en)
|
2010-03-30 |
2013-01-29 |
Ememory Technology Inc. |
Non-volatile memory unit cell with improved sensing margin and reliability
|
|
US8509003B2
(en)
*
|
2011-09-20 |
2013-08-13 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Read architecture for MRAM
|
|
US9478297B2
(en)
|
2014-01-31 |
2016-10-25 |
Taiwan Semiconductor Manufacturing Company Limited |
Multiple-time programmable memory
|
|
US9728278B2
(en)
*
|
2014-10-24 |
2017-08-08 |
Micron Technology, Inc. |
Threshold voltage margin analysis
|
|
JP2018125796A
(ja)
|
2017-02-03 |
2018-08-09 |
富士通株式会社 |
Ｐａｍ受信回路及び受信装置
|
|
CN116524975B
(zh)
*
|
2023-07-03 |
2023-09-15 |
芯天下技术股份有限公司 |
一种用于存储芯片的快速读取电路、存储芯片及电子设备
|