JP2001358300A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JP2001358300A
JP2001358300A JP2000176041A JP2000176041A JP2001358300A JP 2001358300 A JP2001358300 A JP 2001358300A JP 2000176041 A JP2000176041 A JP 2000176041A JP 2000176041 A JP2000176041 A JP 2000176041A JP 2001358300 A JP2001358300 A JP 2001358300A
Authority
JP
Japan
Prior art keywords
mos transistor
channel mos
semiconductor integrated
integrated circuit
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000176041A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001358300A5 (https=
Inventor
Kunihiko Goto
邦彦 後藤
Katsuaki Aizawa
克明 相澤
Kazuhiro Kitani
和弘 木谷
Masayasu Kusakari
正健 草苅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2000176041A priority Critical patent/JP2001358300A/ja
Priority to US09/801,669 priority patent/US6433407B2/en
Priority to TW090105954A priority patent/TW493208B/zh
Publication of JP2001358300A publication Critical patent/JP2001358300A/ja
Publication of JP2001358300A5 publication Critical patent/JP2001358300A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2000176041A 2000-06-12 2000-06-12 半導体集積回路装置 Pending JP2001358300A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000176041A JP2001358300A (ja) 2000-06-12 2000-06-12 半導体集積回路装置
US09/801,669 US6433407B2 (en) 2000-06-12 2001-03-09 Semiconductor integrated circuit
TW090105954A TW493208B (en) 2000-06-12 2001-03-14 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000176041A JP2001358300A (ja) 2000-06-12 2000-06-12 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JP2001358300A true JP2001358300A (ja) 2001-12-26
JP2001358300A5 JP2001358300A5 (https=) 2004-12-09

Family

ID=18677815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000176041A Pending JP2001358300A (ja) 2000-06-12 2000-06-12 半導体集積回路装置

Country Status (3)

Country Link
US (1) US6433407B2 (https=)
JP (1) JP2001358300A (https=)
TW (1) TW493208B (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8193865B2 (en) 2009-04-27 2012-06-05 Renesas Electronics Corporation Output circuit using analog amplifier
US8570313B2 (en) 2009-04-27 2013-10-29 Renesas Electronics Corporation Display panel driver
JP2014064044A (ja) * 2014-01-07 2014-04-10 Renesas Electronics Corp 半導体集積回路装置
JP2014103282A (ja) * 2012-11-20 2014-06-05 Toshiba Corp 半導体装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102012925B1 (ko) * 2012-01-26 2019-08-23 삼성디스플레이 주식회사 유기전계발광 표시장치 및 그의 구동방법
JP2023134064A (ja) 2022-03-14 2023-09-27 キオクシア株式会社 半導体装置、及び、半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576557A (en) * 1995-04-14 1996-11-19 United Microelectronics Corp. Complementary LVTSCR ESD protection circuit for sub-micron CMOS integrated circuits

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8193865B2 (en) 2009-04-27 2012-06-05 Renesas Electronics Corporation Output circuit using analog amplifier
US8570313B2 (en) 2009-04-27 2013-10-29 Renesas Electronics Corporation Display panel driver
JP2014103282A (ja) * 2012-11-20 2014-06-05 Toshiba Corp 半導体装置
JP2014064044A (ja) * 2014-01-07 2014-04-10 Renesas Electronics Corp 半導体集積回路装置

Also Published As

Publication number Publication date
US20010050411A1 (en) 2001-12-13
TW493208B (en) 2002-07-01
US6433407B2 (en) 2002-08-13

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