TW493208B - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit Download PDF

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Publication number
TW493208B
TW493208B TW090105954A TW90105954A TW493208B TW 493208 B TW493208 B TW 493208B TW 090105954 A TW090105954 A TW 090105954A TW 90105954 A TW90105954 A TW 90105954A TW 493208 B TW493208 B TW 493208B
Authority
TW
Taiwan
Prior art keywords
semiconductor integrated
mos transistor
channel mos
integrated circuit
power supply
Prior art date
Application number
TW090105954A
Other languages
English (en)
Chinese (zh)
Inventor
Kunihiko Gotoh
Katsuaki Aizawa
Kazuhiro Kitani
Masatake Kusakari
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of TW493208B publication Critical patent/TW493208B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW090105954A 2000-06-12 2001-03-14 Semiconductor integrated circuit TW493208B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000176041A JP2001358300A (ja) 2000-06-12 2000-06-12 半導体集積回路装置

Publications (1)

Publication Number Publication Date
TW493208B true TW493208B (en) 2002-07-01

Family

ID=18677815

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090105954A TW493208B (en) 2000-06-12 2001-03-14 Semiconductor integrated circuit

Country Status (3)

Country Link
US (1) US6433407B2 (https=)
JP (1) JP2001358300A (https=)
TW (1) TW493208B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5322758B2 (ja) 2009-04-27 2013-10-23 ルネサスエレクトロニクス株式会社 出力回路
JP5288479B2 (ja) 2009-04-27 2013-09-11 ルネサスエレクトロニクス株式会社 表示パネルドライバ
KR102012925B1 (ko) * 2012-01-26 2019-08-23 삼성디스플레이 주식회사 유기전계발광 표시장치 및 그의 구동방법
JP2014103282A (ja) * 2012-11-20 2014-06-05 Toshiba Corp 半導体装置
JP5604602B2 (ja) * 2014-01-07 2014-10-08 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP2023134064A (ja) 2022-03-14 2023-09-27 キオクシア株式会社 半導体装置、及び、半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576557A (en) * 1995-04-14 1996-11-19 United Microelectronics Corp. Complementary LVTSCR ESD protection circuit for sub-micron CMOS integrated circuits

Also Published As

Publication number Publication date
US20010050411A1 (en) 2001-12-13
US6433407B2 (en) 2002-08-13
JP2001358300A (ja) 2001-12-26

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees