JP2001330860A - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法

Info

Publication number
JP2001330860A
JP2001330860A JP2001053109A JP2001053109A JP2001330860A JP 2001330860 A JP2001330860 A JP 2001330860A JP 2001053109 A JP2001053109 A JP 2001053109A JP 2001053109 A JP2001053109 A JP 2001053109A JP 2001330860 A JP2001330860 A JP 2001330860A
Authority
JP
Japan
Prior art keywords
substrate
thin film
pixel region
film transistor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001053109A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001330860A5 (ko
Inventor
Shunpei Yamazaki
舜平 山崎
Jun Koyama
潤 小山
Yasuyuki Arai
康行 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001053109A priority Critical patent/JP2001330860A/ja
Publication of JP2001330860A publication Critical patent/JP2001330860A/ja
Publication of JP2001330860A5 publication Critical patent/JP2001330860A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Wire Bonding (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2001053109A 2000-02-28 2001-02-27 半導体装置及びその作製方法 Withdrawn JP2001330860A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001053109A JP2001330860A (ja) 2000-02-28 2001-02-27 半導体装置及びその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000050644 2000-02-28
JP2000-69556 2000-03-13
JP2000-50644 2000-03-13
JP2000069556 2000-03-13
JP2001053109A JP2001330860A (ja) 2000-02-28 2001-02-27 半導体装置及びその作製方法

Publications (2)

Publication Number Publication Date
JP2001330860A true JP2001330860A (ja) 2001-11-30
JP2001330860A5 JP2001330860A5 (ko) 2008-03-27

Family

ID=27342489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001053109A Withdrawn JP2001330860A (ja) 2000-02-28 2001-02-27 半導体装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP2001330860A (ko)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004361937A (ja) * 2003-05-12 2004-12-24 Semiconductor Energy Lab Co Ltd 液晶表示装置及びその作製方法
US6882012B2 (en) * 2000-02-28 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
JP2006189806A (ja) * 2004-12-06 2006-07-20 Semiconductor Energy Lab Co Ltd 表示装置及びその駆動方法
CN100454119C (zh) * 2003-05-12 2009-01-21 株式会社半导体能源研究所 液晶显示器件、包括其的电子器具、以及其制作方法
JP2009188424A (ja) * 2002-01-28 2009-08-20 Semiconductor Energy Lab Co Ltd 半導体装置
JP2010056566A (ja) * 2005-12-27 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置及び表示機能付きｉｃカード
US7960916B2 (en) 2007-05-16 2011-06-14 Advanced Lcd Technologies Development Center Co., Ltd. Display device and electronic device using thin-film transistors formed on semiconductor thin films which are crystallized on insulating substrates
JP2012506568A (ja) * 2008-10-23 2012-03-15 ケンブリッジ ディスプレイ テクノロジー リミテッド ディスプレイ駆動部
US8730419B2 (en) 2007-08-29 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance including the display device
JP2020519966A (ja) * 2017-09-26 2020-07-02 エルジー・ケム・リミテッド 透明発光素子ディスプレイ用電極基板およびその製造方法
JP2022068149A (ja) * 2008-09-19 2022-05-09 株式会社半導体エネルギー研究所 表示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04155314A (ja) * 1990-10-18 1992-05-28 Mitsubishi Electric Corp マトリックス表示装置
JPH06138481A (ja) * 1992-10-23 1994-05-20 Sharp Corp アクティブマトリクス基板およびその製造方法
JPH1056184A (ja) * 1996-06-04 1998-02-24 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
JPH1154761A (ja) * 1997-08-01 1999-02-26 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
JPH11160734A (ja) * 1997-11-28 1999-06-18 Semiconductor Energy Lab Co Ltd 液晶電気光学装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04155314A (ja) * 1990-10-18 1992-05-28 Mitsubishi Electric Corp マトリックス表示装置
JPH06138481A (ja) * 1992-10-23 1994-05-20 Sharp Corp アクティブマトリクス基板およびその製造方法
JPH1056184A (ja) * 1996-06-04 1998-02-24 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
JPH1154761A (ja) * 1997-08-01 1999-02-26 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
JPH11160734A (ja) * 1997-11-28 1999-06-18 Semiconductor Energy Lab Co Ltd 液晶電気光学装置

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6882012B2 (en) * 2000-02-28 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
US7579214B2 (en) 2000-02-28 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
JP2009188424A (ja) * 2002-01-28 2009-08-20 Semiconductor Energy Lab Co Ltd 半導体装置
CN100454119C (zh) * 2003-05-12 2009-01-21 株式会社半导体能源研究所 液晶显示器件、包括其的电子器具、以及其制作方法
US7843521B2 (en) 2003-05-12 2010-11-30 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, electronic device, and manufacturing method of the liquid crystal display device
JP2004361937A (ja) * 2003-05-12 2004-12-24 Semiconductor Energy Lab Co Ltd 液晶表示装置及びその作製方法
US8305509B2 (en) 2003-05-12 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, electronic device having the same, and manufacturing method of the same
JP2006189806A (ja) * 2004-12-06 2006-07-20 Semiconductor Energy Lab Co Ltd 表示装置及びその駆動方法
US8476632B2 (en) 2005-12-27 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2010056566A (ja) * 2005-12-27 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置及び表示機能付きｉｃカード
US9177242B2 (en) 2005-12-27 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7960916B2 (en) 2007-05-16 2011-06-14 Advanced Lcd Technologies Development Center Co., Ltd. Display device and electronic device using thin-film transistors formed on semiconductor thin films which are crystallized on insulating substrates
US8730419B2 (en) 2007-08-29 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance including the display device
JP2022068149A (ja) * 2008-09-19 2022-05-09 株式会社半導体エネルギー研究所 表示装置
JP7362798B2 (ja) 2008-09-19 2023-10-17 株式会社半導体エネルギー研究所 表示装置
JP2012506568A (ja) * 2008-10-23 2012-03-15 ケンブリッジ ディスプレイ テクノロジー リミテッド ディスプレイ駆動部
JP2020519966A (ja) * 2017-09-26 2020-07-02 エルジー・ケム・リミテッド 透明発光素子ディスプレイ用電極基板およびその製造方法
US11171259B2 (en) 2017-09-26 2021-11-09 Lg Chem, Ltd. Electrode substrate for transparent light-emitting diode display and method for manufacturing same

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