JP2001330860A - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法

Info

Publication number
JP2001330860A
JP2001330860A JP2001053109A JP2001053109A JP2001330860A JP 2001330860 A JP2001330860 A JP 2001330860A JP 2001053109 A JP2001053109 A JP 2001053109A JP 2001053109 A JP2001053109 A JP 2001053109A JP 2001330860 A JP2001330860 A JP 2001330860A
Authority
JP
Japan
Prior art keywords
substrate
thin film
pixel region
film transistor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001053109A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001330860A5 (https=
Inventor
Shunpei Yamazaki
舜平 山崎
Jun Koyama
潤 小山
Yasuyuki Arai
康行 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001053109A priority Critical patent/JP2001330860A/ja
Publication of JP2001330860A publication Critical patent/JP2001330860A/ja
Publication of JP2001330860A5 publication Critical patent/JP2001330860A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Wire Bonding (AREA)
JP2001053109A 2000-02-28 2001-02-27 半導体装置及びその作製方法 Withdrawn JP2001330860A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001053109A JP2001330860A (ja) 2000-02-28 2001-02-27 半導体装置及びその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000050644 2000-02-28
JP2000-50644 2000-03-13
JP2000069556 2000-03-13
JP2000-69556 2000-03-13
JP2001053109A JP2001330860A (ja) 2000-02-28 2001-02-27 半導体装置及びその作製方法

Publications (2)

Publication Number Publication Date
JP2001330860A true JP2001330860A (ja) 2001-11-30
JP2001330860A5 JP2001330860A5 (https=) 2008-03-27

Family

ID=27342489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001053109A Withdrawn JP2001330860A (ja) 2000-02-28 2001-02-27 半導体装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP2001330860A (https=)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004361937A (ja) * 2003-05-12 2004-12-24 Semiconductor Energy Lab Co Ltd 液晶表示装置及びその作製方法
US6882012B2 (en) * 2000-02-28 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
JP2006189806A (ja) * 2004-12-06 2006-07-20 Semiconductor Energy Lab Co Ltd 表示装置及びその駆動方法
CN100454119C (zh) * 2003-05-12 2009-01-21 株式会社半导体能源研究所 液晶显示器件、包括其的电子器具、以及其制作方法
JP2009188424A (ja) * 2002-01-28 2009-08-20 Semiconductor Energy Lab Co Ltd 半導体装置
JP2010056566A (ja) * 2005-12-27 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置及び表示機能付きｉｃカード
US7960916B2 (en) 2007-05-16 2011-06-14 Advanced Lcd Technologies Development Center Co., Ltd. Display device and electronic device using thin-film transistors formed on semiconductor thin films which are crystallized on insulating substrates
JP2012506568A (ja) * 2008-10-23 2012-03-15 ケンブリッジ ディスプレイ テクノロジー リミテッド ディスプレイ駆動部
US8730419B2 (en) 2007-08-29 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance including the display device
JP2020519966A (ja) * 2017-09-26 2020-07-02 エルジー・ケム・リミテッド 透明発光素子ディスプレイ用電極基板およびその製造方法
JP2022068149A (ja) * 2008-09-19 2022-05-09 株式会社半導体エネルギー研究所 表示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04155314A (ja) * 1990-10-18 1992-05-28 Mitsubishi Electric Corp マトリックス表示装置
JPH06138481A (ja) * 1992-10-23 1994-05-20 Sharp Corp アクティブマトリクス基板およびその製造方法
JPH1056184A (ja) * 1996-06-04 1998-02-24 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
JPH1154761A (ja) * 1997-08-01 1999-02-26 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
JPH11160734A (ja) * 1997-11-28 1999-06-18 Semiconductor Energy Lab Co Ltd 液晶電気光学装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04155314A (ja) * 1990-10-18 1992-05-28 Mitsubishi Electric Corp マトリックス表示装置
JPH06138481A (ja) * 1992-10-23 1994-05-20 Sharp Corp アクティブマトリクス基板およびその製造方法
JPH1056184A (ja) * 1996-06-04 1998-02-24 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
JPH1154761A (ja) * 1997-08-01 1999-02-26 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
JPH11160734A (ja) * 1997-11-28 1999-06-18 Semiconductor Energy Lab Co Ltd 液晶電気光学装置

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6882012B2 (en) * 2000-02-28 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
US7579214B2 (en) 2000-02-28 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
JP2009188424A (ja) * 2002-01-28 2009-08-20 Semiconductor Energy Lab Co Ltd 半導体装置
US8305509B2 (en) 2003-05-12 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, electronic device having the same, and manufacturing method of the same
CN100454119C (zh) * 2003-05-12 2009-01-21 株式会社半导体能源研究所 液晶显示器件、包括其的电子器具、以及其制作方法
US7843521B2 (en) 2003-05-12 2010-11-30 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, electronic device, and manufacturing method of the liquid crystal display device
JP2004361937A (ja) * 2003-05-12 2004-12-24 Semiconductor Energy Lab Co Ltd 液晶表示装置及びその作製方法
JP2006189806A (ja) * 2004-12-06 2006-07-20 Semiconductor Energy Lab Co Ltd 表示装置及びその駆動方法
JP2010056566A (ja) * 2005-12-27 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置及び表示機能付きｉｃカード
US9177242B2 (en) 2005-12-27 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8476632B2 (en) 2005-12-27 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7960916B2 (en) 2007-05-16 2011-06-14 Advanced Lcd Technologies Development Center Co., Ltd. Display device and electronic device using thin-film transistors formed on semiconductor thin films which are crystallized on insulating substrates
US8730419B2 (en) 2007-08-29 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance including the display device
JP2022068149A (ja) * 2008-09-19 2022-05-09 株式会社半導体エネルギー研究所 表示装置
JP7362798B2 (ja) 2008-09-19 2023-10-17 株式会社半導体エネルギー研究所 表示装置
JP2024016025A (ja) * 2008-09-19 2024-02-06 株式会社半導体エネルギー研究所 表示装置
US12250855B2 (en) 2008-09-19 2025-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012506568A (ja) * 2008-10-23 2012-03-15 ケンブリッジ ディスプレイ テクノロジー リミテッド ディスプレイ駆動部
JP2020519966A (ja) * 2017-09-26 2020-07-02 エルジー・ケム・リミテッド 透明発光素子ディスプレイ用電極基板およびその製造方法
US11171259B2 (en) 2017-09-26 2021-11-09 Lg Chem, Ltd. Electrode substrate for transparent light-emitting diode display and method for manufacturing same

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