JP2001323376A5 - - Google Patents
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- Publication number
- JP2001323376A5 JP2001323376A5 JP2001053364A JP2001053364A JP2001323376A5 JP 2001323376 A5 JP2001323376 A5 JP 2001323376A5 JP 2001053364 A JP2001053364 A JP 2001053364A JP 2001053364 A JP2001053364 A JP 2001053364A JP 2001323376 A5 JP2001323376 A5 JP 2001323376A5
- Authority
- JP
- Japan
- Prior art keywords
- deposited film
- source gas
- parallel plate
- forming apparatus
- discharge vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001053364A JP2001323376A (ja) | 2000-03-06 | 2001-02-28 | 堆積膜の形成装置 |
| US09/797,566 US6877458B2 (en) | 2000-03-06 | 2001-03-05 | Apparatus for forming deposited film |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-60717 | 2000-03-06 | ||
| JP2000060717 | 2000-03-06 | ||
| JP2001053364A JP2001323376A (ja) | 2000-03-06 | 2001-02-28 | 堆積膜の形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001323376A JP2001323376A (ja) | 2001-11-22 |
| JP2001323376A5 true JP2001323376A5 (https=) | 2008-04-03 |
Family
ID=26586855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001053364A Pending JP2001323376A (ja) | 2000-03-06 | 2001-02-28 | 堆積膜の形成装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6877458B2 (https=) |
| JP (1) | JP2001323376A (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4296743B2 (ja) * | 2002-02-08 | 2009-07-15 | コニカミノルタホールディングス株式会社 | 製膜装置 |
| US20070154650A1 (en) * | 2005-12-30 | 2007-07-05 | Atomic Energy Council - Institute Of Nuclear Energy Research | Method and apparatus for glow discharge plasma treatment of flexible material at atmospheric pressure |
| US7501305B2 (en) * | 2006-10-23 | 2009-03-10 | Canon Kabushiki Kaisha | Method for forming deposited film and photovoltaic element |
| JP4999737B2 (ja) * | 2008-03-14 | 2012-08-15 | 富士フイルム株式会社 | 成膜装置 |
| JP5463167B2 (ja) * | 2010-03-04 | 2014-04-09 | 富士フイルム株式会社 | 成膜方法および成膜装置 |
| US20200098595A1 (en) * | 2018-09-20 | 2020-03-26 | Nanya Technology Corporation | Semiconductor manufacturing apparatus and method for operating the same |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
| US4479369A (en) * | 1983-04-04 | 1984-10-30 | Sando Iron Works Co., Ltd. | Apparatus for treating a textile product with the use of low-temperature plasma |
| JPS60155676A (ja) * | 1984-01-24 | 1985-08-15 | Canon Inc | プラズマcvd装置 |
| US4841908A (en) * | 1986-06-23 | 1989-06-27 | Minnesota Mining And Manufacturing Company | Multi-chamber deposition system |
| US4969416A (en) * | 1986-07-03 | 1990-11-13 | Emcore, Inc. | Gas treatment apparatus and method |
| US4772356A (en) * | 1986-07-03 | 1988-09-20 | Emcore, Inc. | Gas treatment apparatus and method |
| JPH0610356B2 (ja) * | 1988-02-18 | 1994-02-09 | 松下電器産業株式会社 | プラズマ処理装置およびプラズマ温度測定方法 |
| JP2975151B2 (ja) * | 1991-03-28 | 1999-11-10 | キヤノン株式会社 | 半導体素子の連続的製造装置 |
| JP3118037B2 (ja) * | 1991-10-28 | 2000-12-18 | キヤノン株式会社 | 堆積膜形成方法および堆積膜形成装置 |
| JP3367981B2 (ja) * | 1992-12-28 | 2003-01-20 | キヤノン株式会社 | 堆積膜形成方法および堆積膜形成装置 |
| TW283250B (en) * | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
| US5948704A (en) * | 1996-06-05 | 1999-09-07 | Lam Research Corporation | High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| JPH11251612A (ja) * | 1998-03-03 | 1999-09-17 | Canon Inc | 光起電力素子の製造方法 |
| JP2001035839A (ja) * | 1999-05-18 | 2001-02-09 | Hitachi Kokusai Electric Inc | プラズマ生成装置および半導体製造方法 |
-
2001
- 2001-02-28 JP JP2001053364A patent/JP2001323376A/ja active Pending
- 2001-03-05 US US09/797,566 patent/US6877458B2/en not_active Expired - Fee Related
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