JP2001323376A - 堆積膜の形成装置 - Google Patents

堆積膜の形成装置

Info

Publication number
JP2001323376A
JP2001323376A JP2001053364A JP2001053364A JP2001323376A JP 2001323376 A JP2001323376 A JP 2001323376A JP 2001053364 A JP2001053364 A JP 2001053364A JP 2001053364 A JP2001053364 A JP 2001053364A JP 2001323376 A JP2001323376 A JP 2001323376A
Authority
JP
Japan
Prior art keywords
deposited film
source gas
film forming
forming apparatus
parallel plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001053364A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001323376A5 (https=
Inventor
Hiroyuki Ozaki
裕之 尾▲崎▼
Shotaro Okabe
正太郎 岡部
Sunao Yoshisato
直 芳里
Yuzo Koda
勇蔵 幸田
Masahiro Kanai
正博 金井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2001053364A priority Critical patent/JP2001323376A/ja
Priority to US09/797,566 priority patent/US6877458B2/en
Publication of JP2001323376A publication Critical patent/JP2001323376A/ja
Publication of JP2001323376A5 publication Critical patent/JP2001323376A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2001053364A 2000-03-06 2001-02-28 堆積膜の形成装置 Pending JP2001323376A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001053364A JP2001323376A (ja) 2000-03-06 2001-02-28 堆積膜の形成装置
US09/797,566 US6877458B2 (en) 2000-03-06 2001-03-05 Apparatus for forming deposited film

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-60717 2000-03-06
JP2000060717 2000-03-06
JP2001053364A JP2001323376A (ja) 2000-03-06 2001-02-28 堆積膜の形成装置

Publications (2)

Publication Number Publication Date
JP2001323376A true JP2001323376A (ja) 2001-11-22
JP2001323376A5 JP2001323376A5 (https=) 2008-04-03

Family

ID=26586855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001053364A Pending JP2001323376A (ja) 2000-03-06 2001-02-28 堆積膜の形成装置

Country Status (2)

Country Link
US (1) US6877458B2 (https=)
JP (1) JP2001323376A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003231969A (ja) * 2002-02-08 2003-08-19 Konica Corp 製膜装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070154650A1 (en) * 2005-12-30 2007-07-05 Atomic Energy Council - Institute Of Nuclear Energy Research Method and apparatus for glow discharge plasma treatment of flexible material at atmospheric pressure
US7501305B2 (en) * 2006-10-23 2009-03-10 Canon Kabushiki Kaisha Method for forming deposited film and photovoltaic element
JP4999737B2 (ja) * 2008-03-14 2012-08-15 富士フイルム株式会社 成膜装置
JP5463167B2 (ja) * 2010-03-04 2014-04-09 富士フイルム株式会社 成膜方法および成膜装置
US20200098595A1 (en) * 2018-09-20 2020-03-26 Nanya Technology Corporation Semiconductor manufacturing apparatus and method for operating the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4479369A (en) * 1983-04-04 1984-10-30 Sando Iron Works Co., Ltd. Apparatus for treating a textile product with the use of low-temperature plasma
JPS60155676A (ja) * 1984-01-24 1985-08-15 Canon Inc プラズマｃｖｄ装置
JPS6333816A (ja) * 1986-07-03 1988-02-13 エムコ−ル　インコ−ポレイテツド 基体のガス処理方法と装置
JPH01212776A (ja) * 1988-02-18 1989-08-25 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ温度測定方法
JPH06192839A (ja) * 1992-12-28 1994-07-12 Canon Inc 堆積膜形成方法および堆積膜形成装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
US4841908A (en) * 1986-06-23 1989-06-27 Minnesota Mining And Manufacturing Company Multi-chamber deposition system
US4969416A (en) * 1986-07-03 1990-11-13 Emcore, Inc. Gas treatment apparatus and method
JP2975151B2 (ja) * 1991-03-28 1999-11-10 キヤノン株式会社 半導体素子の連続的製造装置
JP3118037B2 (ja) * 1991-10-28 2000-12-18 キヤノン株式会社 堆積膜形成方法および堆積膜形成装置
TW283250B (en) * 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
JPH11251612A (ja) * 1998-03-03 1999-09-17 Canon Inc 光起電力素子の製造方法
JP2001035839A (ja) * 1999-05-18 2001-02-09 Hitachi Kokusai Electric Inc プラズマ生成装置および半導体製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4479369A (en) * 1983-04-04 1984-10-30 Sando Iron Works Co., Ltd. Apparatus for treating a textile product with the use of low-temperature plasma
JPS60155676A (ja) * 1984-01-24 1985-08-15 Canon Inc プラズマｃｖｄ装置
JPS6333816A (ja) * 1986-07-03 1988-02-13 エムコ−ル　インコ−ポレイテツド 基体のガス処理方法と装置
JPH01212776A (ja) * 1988-02-18 1989-08-25 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ温度測定方法
JPH06192839A (ja) * 1992-12-28 1994-07-12 Canon Inc 堆積膜形成方法および堆積膜形成装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003231969A (ja) * 2002-02-08 2003-08-19 Konica Corp 製膜装置

Also Published As

Publication number Publication date
US20010039924A1 (en) 2001-11-15
US6877458B2 (en) 2005-04-12

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