JP2001308304A - 固体撮像素子の製造方法 - Google Patents

固体撮像素子の製造方法

Info

Publication number
JP2001308304A
JP2001308304A JP2000117326A JP2000117326A JP2001308304A JP 2001308304 A JP2001308304 A JP 2001308304A JP 2000117326 A JP2000117326 A JP 2000117326A JP 2000117326 A JP2000117326 A JP 2000117326A JP 2001308304 A JP2001308304 A JP 2001308304A
Authority
JP
Japan
Prior art keywords
ion implantation
sensor
impurity
substrate surface
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000117326A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001308304A5 (enExample
Inventor
Masanori Ohashi
正典 大橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2000117326A priority Critical patent/JP2001308304A/ja
Priority to KR1020010020743A priority patent/KR100834300B1/ko
Priority to US09/837,252 priority patent/US6551910B2/en
Publication of JP2001308304A publication Critical patent/JP2001308304A/ja
Publication of JP2001308304A5 publication Critical patent/JP2001308304A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2000117326A 2000-04-19 2000-04-19 固体撮像素子の製造方法 Pending JP2001308304A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000117326A JP2001308304A (ja) 2000-04-19 2000-04-19 固体撮像素子の製造方法
KR1020010020743A KR100834300B1 (ko) 2000-04-19 2001-04-18 고체 촬상 소자의 제조 방법
US09/837,252 US6551910B2 (en) 2000-04-19 2001-04-18 Method of manufacturing solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000117326A JP2001308304A (ja) 2000-04-19 2000-04-19 固体撮像素子の製造方法

Publications (2)

Publication Number Publication Date
JP2001308304A true JP2001308304A (ja) 2001-11-02
JP2001308304A5 JP2001308304A5 (enExample) 2007-02-15

Family

ID=18628657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000117326A Pending JP2001308304A (ja) 2000-04-19 2000-04-19 固体撮像素子の製造方法

Country Status (3)

Country Link
US (1) US6551910B2 (enExample)
JP (1) JP2001308304A (enExample)
KR (1) KR100834300B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005135960A (ja) * 2003-10-28 2005-05-26 Fuji Film Microdevices Co Ltd 固体撮像素子及びその製造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100700270B1 (ko) * 2001-11-22 2007-03-26 매그나칩 반도체 유한회사 시모스 이미지센서 및 그 제조방법
KR100700269B1 (ko) * 2001-11-22 2007-03-26 매그나칩 반도체 유한회사 시모스 이미지센서 및 그 제조방법
FR2833408B1 (fr) * 2001-12-12 2004-03-12 St Microelectronics Sa Procede de controle du sur eclairement d'une photodiode et circuit integre correspondant
JP2005093866A (ja) * 2003-09-19 2005-04-07 Fuji Film Microdevices Co Ltd 固体撮像素子の製造方法
JP4444754B2 (ja) * 2004-08-12 2010-03-31 富士フイルム株式会社 固体撮像装置の駆動方法
US7098067B2 (en) * 2004-12-13 2006-08-29 International Business Machines Corporation Masked sidewall implant for image sensor
JP4981255B2 (ja) * 2005-01-24 2012-07-18 オンセミコンダクター・トレーディング・リミテッド 電荷結合装置及び固体撮像装置
US7141836B1 (en) * 2005-05-31 2006-11-28 International Business Machines Corporation Pixel sensor having doped isolation structure sidewall
WO2008022918A2 (de) * 2006-08-23 2008-02-28 Basf Se Verbindungen und ihre verwendung zur herstellung von leder und als dispergiermittel
US8072015B2 (en) * 2007-06-04 2011-12-06 Sony Corporation Solid-state imaging device and manufacturing method thereof
US8329499B2 (en) 2008-12-10 2012-12-11 Truesense Imaging, Inc. Method of forming lateral overflow drain and channel stop regions in image sensors
US8804021B2 (en) * 2011-11-03 2014-08-12 Omnivision Technologies, Inc. Method, apparatus and system for providing improved full well capacity in an image sensor pixel

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE39611B1 (en) * 1973-08-14 1978-11-22 Siemens Ag Improvements in or relating to two-phase charge coupled devices
JP2970158B2 (ja) * 1991-12-20 1999-11-02 日本電気株式会社 固体撮像装置の製造方法
JPH07240388A (ja) * 1994-02-28 1995-09-12 Nec Corp 半導体装置のイオン注入方法
KR0136924B1 (ko) * 1994-07-06 1998-04-24 문정환 씨씨디(ccd) 영상소자의 제조방법
FR2735904B1 (fr) * 1995-06-21 1997-07-18 Commissariat Energie Atomique Procede de realisation d'un semi-conducteur avec une zone fortement dopee situee entre des zones faiblement dopees, pour la fabrication de transistors
JP2965061B2 (ja) * 1996-04-19 1999-10-18 日本電気株式会社 電荷結合素子およびその製造方法
US6023081A (en) * 1997-11-14 2000-02-08 Motorola, Inc. Semiconductor image sensor
US6114210A (en) * 1997-11-26 2000-09-05 Advanced Micro Devices, Inc. Method of forming semiconductor device comprising a drain region with a graded N-LDD junction with increased HCI lifetime
US6333526B1 (en) * 1997-11-27 2001-12-25 Nec Corporation Charge transfer device and a manufacturing process therefor
US6194278B1 (en) * 1999-06-21 2001-02-27 Infineon Technologies North America Corp. Device performance by employing an improved method for forming halo implants

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005135960A (ja) * 2003-10-28 2005-05-26 Fuji Film Microdevices Co Ltd 固体撮像素子及びその製造方法

Also Published As

Publication number Publication date
KR100834300B1 (ko) 2008-06-02
US6551910B2 (en) 2003-04-22
KR20010098696A (ko) 2001-11-08
US20020003611A1 (en) 2002-01-10

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