JP2001296843A - 半導体表示装置及び半導体表示装置の駆動方法 - Google Patents
半導体表示装置及び半導体表示装置の駆動方法Info
- Publication number
- JP2001296843A JP2001296843A JP2001027581A JP2001027581A JP2001296843A JP 2001296843 A JP2001296843 A JP 2001296843A JP 2001027581 A JP2001027581 A JP 2001027581A JP 2001027581 A JP2001027581 A JP 2001027581A JP 2001296843 A JP2001296843 A JP 2001296843A
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- 238000000034 method Methods 0.000 title claims abstract description 100
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 72
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
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- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
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- 238000002834 transmittance Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229930186657 Lat Natural products 0.000 description 1
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- 239000004952 Polyamide Substances 0.000 description 1
- 241000862969 Stella Species 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
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- 238000003491 array Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
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- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 150000002367 halogens Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
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- 238000000059 patterning Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001027581A JP2001296843A (ja) | 2000-02-08 | 2001-02-05 | 半導体表示装置及び半導体表示装置の駆動方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000031055 | 2000-02-08 | ||
| JP2000-31055 | 2000-02-08 | ||
| JP2001027581A JP2001296843A (ja) | 2000-02-08 | 2001-02-05 | 半導体表示装置及び半導体表示装置の駆動方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001296843A true JP2001296843A (ja) | 2001-10-26 |
| JP2001296843A5 JP2001296843A5 (enExample) | 2008-03-21 |
Family
ID=26585071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001027581A Withdrawn JP2001296843A (ja) | 2000-02-08 | 2001-02-05 | 半導体表示装置及び半導体表示装置の駆動方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001296843A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005017908A (ja) * | 2003-06-27 | 2005-01-20 | Sanyo Electric Co Ltd | 表示装置 |
| JP2005017969A (ja) * | 2003-06-30 | 2005-01-20 | Sanyo Electric Co Ltd | 表示装置 |
| JP2008541155A (ja) * | 2005-05-05 | 2008-11-20 | クアルコム，インコーポレイテッド | Ｍｅｍｓディスプレイデバイスを駆動するシステムおよび方法 |
| JP2019105843A (ja) * | 2001-10-30 | 2019-06-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10891894B2 (en) | 2001-10-30 | 2021-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6374036A (ja) * | 1986-09-18 | 1988-04-04 | Fujitsu Ltd | アクテイブマトリクス型液晶パネルの駆動方法 |
| JPH0378390A (ja) * | 1989-08-21 | 1991-04-03 | Mitsubishi Electric Corp | 液晶表示装置 |
| JPH03235918A (ja) * | 1990-02-13 | 1991-10-21 | Toshiba Corp | 液晶表示装置 |
| JPH04142513A (ja) * | 1990-10-04 | 1992-05-15 | Seiko Epson Corp | 液晶表示装置 |
| JPH08320674A (ja) * | 1995-05-25 | 1996-12-03 | Casio Comput Co Ltd | 液晶駆動装置 |
| JPH0916132A (ja) * | 1995-06-28 | 1997-01-17 | Casio Comput Co Ltd | 液晶駆動装置 |
| JPH09236790A (ja) * | 1995-12-28 | 1997-09-09 | Advanced Display:Kk | 液晶表示装置およびその駆動方法 |
| JPH10133176A (ja) * | 1996-09-05 | 1998-05-22 | Toshiba Corp | 液晶表示装置およびその駆動方法 |
-
2001
- 2001-02-05 JP JP2001027581A patent/JP2001296843A/ja not_active Withdrawn
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6374036A (ja) * | 1986-09-18 | 1988-04-04 | Fujitsu Ltd | アクテイブマトリクス型液晶パネルの駆動方法 |
| JPH0378390A (ja) * | 1989-08-21 | 1991-04-03 | Mitsubishi Electric Corp | 液晶表示装置 |
| JPH03235918A (ja) * | 1990-02-13 | 1991-10-21 | Toshiba Corp | 液晶表示装置 |
| JPH04142513A (ja) * | 1990-10-04 | 1992-05-15 | Seiko Epson Corp | 液晶表示装置 |
| JPH08320674A (ja) * | 1995-05-25 | 1996-12-03 | Casio Comput Co Ltd | 液晶駆動装置 |
| JPH0916132A (ja) * | 1995-06-28 | 1997-01-17 | Casio Comput Co Ltd | 液晶駆動装置 |
| JPH09236790A (ja) * | 1995-12-28 | 1997-09-09 | Advanced Display:Kk | 液晶表示装置およびその駆動方法 |
| JPH10133176A (ja) * | 1996-09-05 | 1998-05-22 | Toshiba Corp | 液晶表示装置およびその駆動方法 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019105843A (ja) * | 2001-10-30 | 2019-06-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10891894B2 (en) | 2001-10-30 | 2021-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| US10991299B2 (en) | 2001-10-30 | 2021-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| US11011108B2 (en) | 2001-10-30 | 2021-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| JP2005017908A (ja) * | 2003-06-27 | 2005-01-20 | Sanyo Electric Co Ltd | 表示装置 |
| JP2005017969A (ja) * | 2003-06-30 | 2005-01-20 | Sanyo Electric Co Ltd | 表示装置 |
| JP2008541155A (ja) * | 2005-05-05 | 2008-11-20 | クアルコム，インコーポレイテッド | Ｍｅｍｓディスプレイデバイスを駆動するシステムおよび方法 |
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