JP2001284587A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP2001284587A
JP2001284587A JP2000089736A JP2000089736A JP2001284587A JP 2001284587 A JP2001284587 A JP 2001284587A JP 2000089736 A JP2000089736 A JP 2000089736A JP 2000089736 A JP2000089736 A JP 2000089736A JP 2001284587 A JP2001284587 A JP 2001284587A
Authority
JP
Japan
Prior art keywords
trench
gate
semiconductor region
film
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000089736A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001284587A5 (enExample
Inventor
Takahiro Kanamaru
恭弘 金丸
Hironobu Shibata
浩延 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Kaga Toshiba Electronics Corp
Original Assignee
Toshiba Corp
Kaga Toshiba Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Kaga Toshiba Electronics Corp filed Critical Toshiba Corp
Priority to JP2000089736A priority Critical patent/JP2001284587A/ja
Publication of JP2001284587A publication Critical patent/JP2001284587A/ja
Publication of JP2001284587A5 publication Critical patent/JP2001284587A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0295—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2000089736A 2000-03-28 2000-03-28 半導体装置およびその製造方法 Pending JP2001284587A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000089736A JP2001284587A (ja) 2000-03-28 2000-03-28 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000089736A JP2001284587A (ja) 2000-03-28 2000-03-28 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2001284587A true JP2001284587A (ja) 2001-10-12
JP2001284587A5 JP2001284587A5 (enExample) 2007-03-22

Family

ID=18605450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000089736A Pending JP2001284587A (ja) 2000-03-28 2000-03-28 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2001284587A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7037754B2 (en) 1999-09-20 2006-05-02 Rohm Co., Ltd. Semiconductor chip and method of producing the same
US7091555B2 (en) 2003-04-02 2006-08-15 Rohm Co., Ltd. Semiconductor device for switching
JP2007273931A (ja) * 2006-03-07 2007-10-18 Toshiba Corp 電力用半導体素子、その製造方法及びその駆動方法
US7525133B2 (en) 2005-12-28 2009-04-28 Kabushiki Kaisha Toshiba Trench-gate MOS transistor composed of multiple conductors
JP2009123899A (ja) * 2007-11-14 2009-06-04 Rohm Co Ltd 半導体装置
US7582931B2 (en) 2004-06-04 2009-09-01 Samsung Electronics Co., Ltd. Recessed gate electrodes having covered layer interfaces and methods of forming the same
WO2012172965A1 (ja) * 2011-06-15 2012-12-20 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
US9634095B2 (en) 2013-01-17 2017-04-25 Denso Corporation Semiconductor device and method for manufacturing the same
EP3671860A1 (en) * 2018-12-20 2020-06-24 Infineon Technologies Austria AG Semiconductor transistor device and method of manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05315620A (ja) * 1992-05-08 1993-11-26 Rohm Co Ltd 半導体装置およびその製造法
JPH08335701A (ja) * 1995-02-07 1996-12-17 Sony Corp 電界効果型半導体装置及びその製造方法
JPH09219519A (ja) * 1995-12-07 1997-08-19 Fuji Electric Co Ltd Ｍｏｓ型半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05315620A (ja) * 1992-05-08 1993-11-26 Rohm Co Ltd 半導体装置およびその製造法
JPH08335701A (ja) * 1995-02-07 1996-12-17 Sony Corp 電界効果型半導体装置及びその製造方法
JPH09219519A (ja) * 1995-12-07 1997-08-19 Fuji Electric Co Ltd Ｍｏｓ型半導体装置の製造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7037754B2 (en) 1999-09-20 2006-05-02 Rohm Co., Ltd. Semiconductor chip and method of producing the same
US7091555B2 (en) 2003-04-02 2006-08-15 Rohm Co., Ltd. Semiconductor device for switching
US7582931B2 (en) 2004-06-04 2009-09-01 Samsung Electronics Co., Ltd. Recessed gate electrodes having covered layer interfaces and methods of forming the same
US8034701B2 (en) 2004-06-04 2011-10-11 Samsung Electronics Co., Ltd. Methods of forming recessed gate electrodes having covered layer interfaces
US7525133B2 (en) 2005-12-28 2009-04-28 Kabushiki Kaisha Toshiba Trench-gate MOS transistor composed of multiple conductors
US7772641B2 (en) 2006-03-07 2010-08-10 Kabushiki Kaisha Toshiba Power semiconductor device with a plurality of gate electrodes
JP2007273931A (ja) * 2006-03-07 2007-10-18 Toshiba Corp 電力用半導体素子、その製造方法及びその駆動方法
JP2009123899A (ja) * 2007-11-14 2009-06-04 Rohm Co Ltd 半導体装置
US8125025B2 (en) 2007-11-14 2012-02-28 Rohm Co., Ltd. Semiconductor device
WO2012172965A1 (ja) * 2011-06-15 2012-12-20 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
US9634095B2 (en) 2013-01-17 2017-04-25 Denso Corporation Semiconductor device and method for manufacturing the same
EP3671860A1 (en) * 2018-12-20 2020-06-24 Infineon Technologies Austria AG Semiconductor transistor device and method of manufacturing the same
US11316043B2 (en) 2018-12-20 2022-04-26 Infineon Technologies Austria Ag Semiconductor transistor device and method of manufacturing the same
US12119400B2 (en) 2018-12-20 2024-10-15 Infineon Technologies Austria Ag Semiconductor transistor device and method of manufacturing the same

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